M434309 五、新型說明： 【新型所屬之技術領域】 [0001] 本新型有關發光二極體晶圓，尤其關於發光二極體 晶圓的減薄結構。 【先前技術】 [0002] 請參閱「圖1」所示，發光二極體晶圓1在製造完成 之後，必須進行晶圓研磨作業，以減少厚度，而利於後 續的晶圓切割、封裝等作業。 Φ [0003] 習知發光二極體晶圓1在研磨作業時，必須加以固定 不動，然而發光二極體晶圓1的厚度相當的薄，請參閱「 圖2」所示，其如使用一般半導體製程使用的真空吸附固 定裝置2，為了滿足研磨時所需的固定強度，發光二極體 晶圓1有可能因為吸附力過強而局部受壓，其會導致裂缝 或破片，或者造成長晶面刮傷。 [0004]M434309 V. New description: [New technology field] [0001] The present invention relates to a light-emitting diode wafer, in particular to a thinned structure of a light-emitting diode wafer. [Prior Art] [0002] Please refer to "Figure 1". After the fabrication of the LED wafer 1 is completed, wafer polishing must be performed to reduce the thickness, which facilitates subsequent wafer cutting and packaging operations. . Φ [0003] The conventional light-emitting diode wafer 1 must be fixed during the polishing operation. However, the thickness of the light-emitting diode wafer 1 is relatively thin, as shown in FIG. 2, which is generally used. In the vacuum adsorption fixing device 2 used in the semiconductor process, in order to satisfy the fixing strength required for polishing, the light-emitting diode wafer 1 may be partially pressed due to excessive adsorption force, which may cause cracks or fragments, or cause crystal growth. Scratch on the face. [0004]
因此請參閱「圖3」與「圖4」所示，習知在進行研 磨作業之前，一般為將複數發光二極體晶圓1利用固定臘 3黏著固定於一工作台4上，而保持發光二極體晶圓1不動 ，因此在使用研磨裝置5進行研磨時，可以利用固定臘3 緊密貼附發光二極體晶圓1的表面並黏著於該工作台4上 ，亦即為利用固定臘3保護發光二極體晶圓1，以避免研 磨頭6在減薄發光二極體晶圓1時，造成裂縫或破片。 [0005] 然而此一固定方式，而在研磨及拋光作業完畢之後 ，必須使用鍬子將被固定臘2固定的發光二極體晶圓1翹 出，此一作業若施力稍有不當，極易使發光二極體晶圓1 1012059# 單編號 A〇101 第3頁/共15頁 1012019516-0 M434309 產生破片或裂縫，其為目前發光二極體晶圓丨提升製程良 率的瓶頸之一。 顯然習知固定發光二極體晶圓丨進行減薄作業的方式 ’易成為製程良率的瓶頸’無法滿足使用上的需要。 【新型内容】Therefore, please refer to "Fig. 3" and "Fig. 4". It is known that before the polishing operation, the plurality of LED wafers 1 are fixedly adhered to a table 4 by the fixed wax 3, and remain illuminated. The diode wafer 1 is not moved. Therefore, when the polishing device 5 is used for polishing, the surface of the light-emitting diode wafer 1 can be closely attached and adhered to the table 4 by using the fixed wax 3, that is, the fixed wax is used. 3 Protecting the light-emitting diode wafer 1 to prevent the polishing head 6 from causing cracks or fragments when the light-emitting diode wafer 1 is thinned. [0005] However, in this fixed manner, after the polishing and polishing operations are completed, the light-emitting diode wafer 1 fixed by the fixed wax 2 must be lifted out using tweezers, and if the operation is slightly improper, the pole is extremely improper. Easy to make LED wafer 1 1012059# Single No. A〇101 Page 3 / Total 15 Page 1012019516-0 M434309 Produce fragments or cracks, which is one of the bottlenecks in the current process of improving the yield of LED wafers . Obviously, the way in which the fixed light-emitting diode wafer crucible is thinned is to become a bottleneck of the process yield, which cannot meet the needs of use. [New content]
爰是，本新型的主要目的在於揭露一種發光二極體 晶圓減薄結構，其可保護發光二極體晶圓，避免發光二 極體晶圓在減薄過程中，因局部受力過大而產生裂縫、 破片或長晶面刮傷.。Therefore, the main purpose of the present invention is to disclose a light-emitting diode wafer thinning structure, which can protect a light-emitting diode wafer and prevent the light-emitting diode wafer from being excessively stressed due to local stress during the thinning process. Cracks, fragments or long crystal faces are scratched.
基於上述目的，本新型為一種發光二極體晶圓減薄 結構，用於減薄一發光二極體晶圓，其包含一真空吸附 裝置、一保護黏貼膜與一研磨裝置，其中該真空吸附裝 置具有一吸氣面，該吸氣面設置複數提供負壓的吸氣孔 ’而該保護黏貼膜具有一黏貼面與一被吸附面，且該黏 貼面黏貼該發光二極體晶圓，而該被吸附面貼附於該吸 氣面上，並覆蓋該吸氣孔，以讓該發光二極體晶圓間隔 該保護黏貼膜被該真空吸附裝置吸附，又該研磨裝置具 有一研磨頭’該研磨頭旋轉接觸該發光二極體晶圓而減 薄該發光二極體晶圓。 [0009] 據此’由於該保護黏貼膜為完整的黏貼於該發光二 極體晶圓的底部，且該保護黏貼膜為具有韌性的材質， 因此可以增加該發光二極體晶圓的結構強度，而保護該 發光二極體晶圓，而可以避免該發光二極體晶圓的邊緣 因為受力過大而破裂’造成該發光二極體晶圓的損傷， 1012019516-0 或者可以避免造成長晶面刮傷，而形成一種高良率的發 1〇12〇592f單编號A0101 第4頁/共15頁 [0010]M434309 光二極體晶圓減薄結構，可滿足使用上的需要。 【實施方式】 有關本新型之詳細說明及技術内容，現就配合圖式 說明如下： 請參閱「圖5」與「圖6」所示，本新型為一種發光 二極體晶圓減薄結構，用於減薄一發光二極體晶圓丨〇， 其包含一真空吸附裝置20、一保護黏貼膜3〇a與一研磨裝 置40，其中該真空吸附裝置20具有一吸氣面21，該吸氣 面21設置複數提供負壓的吸氣孔22，該真空吸附裝置2〇 可以内藏空氣泵（圖未示），以利用空氣泵排出氣體而達 成真空狀態，以於該複數吸氣孔22處提供負壓。 該保遵黏貼膜30A具有一黏貼面31與一被吸附面32 ，談保護黏貼膜30A為具韌性的塑膠薄膜，如可以使用 PVC薄膜加以塗上黏谬而製成。且該黏貼西31黏貼該發光 一極體晶圓10，而該被吸附面32貼附於該吸氣面21上， 並覆蓋該吸氣孔22，以讓該發光二極體晶圓間隔該保 護黏貼膜3 0 A被該真空吸附裝置2 〇吸附。又該研磨裝置4 〇 具有一研磨頭41，該研磨頭41旋轉接觸該發光二極體晶 圓10而減薄該發光二極體晶圓1〇。 又本創作在實際實施時，為同時吸附多個發光二極 體晶圓10，以同時進行研磨與拋光作業，而其實施方式 可以分為兩種，其一，如「圖5」所示，該保護黏貼膜 30A的尺寸為對應該發光二極體晶圓1〇設置，亦即為於每 一個該發光二極體晶圓1 〇晶圓之下，皆對應設置相同尺 寸的該保護黏貼膜30A，其可以節省該保護黏貼膜3〇A的 材料。 1012019516-0 1012〇592ί^早編號AO〗。〗 第5頁/共IS頁 M434309 而另一種實施方式，請參閱「圖7」所示，為讓該保 護黏貼膜30B的尺寸對應該真空吸附裝置20的吸氣面21設 置，而該發光二極體晶圓10具有複數個且散佈黏貼於該 黏貼面31上，亦即為讓多個該發光二極體晶圓10黏貼在 同一保護黏貼膜30B上，其可以減少後續製程，需要—— 去除保護黏貼膜30B的困擾。 如上所述，本創作藉由讓具韌性的該保護黏貼膜，Based on the above object, the present invention is a light-emitting diode wafer thinning structure for thinning a light-emitting diode wafer, comprising a vacuum adsorption device, a protective adhesive film and a polishing device, wherein the vacuum adsorption The device has a suction surface, the suction surface is provided with a plurality of suction holes for providing a negative pressure, and the protective adhesive film has an adhesive surface and an adsorbed surface, and the adhesive surface is adhered to the light emitting diode wafer, and the adhesive surface is adhered to the light emitting diode wafer. The adsorbed surface is attached to the suction surface and covers the air suction hole, so that the light-emitting diode wafer is separated from the protective adhesive film by the vacuum adsorption device, and the polishing device has a polishing head. The polishing head rotates in contact with the LED wafer to thin the LED wafer. [0009] Accordingly, since the protective adhesive film is completely adhered to the bottom of the light-emitting diode wafer, and the protective adhesive film is a tough material, the structural strength of the light-emitting diode wafer can be increased. Protecting the light-emitting diode wafer, and avoiding the edge of the light-emitting diode wafer from being broken due to excessive force, causing damage to the light-emitting diode wafer, 1012019516-0 or avoiding causing crystal growth Scratch, and form a high-yield hair 1〇12〇592f single number A0101 page 4 / a total of 15 pages [0010] M434309 light diode wafer thinning structure, to meet the needs of use. [Embodiment] The detailed description and technical contents of the present invention are described below with reference to the following figures: Please refer to FIG. 5 and FIG. 6 , which is a light-emitting diode wafer thinning structure. For thinning a light-emitting diode wafer crucible, comprising a vacuum adsorption device 20, a protective adhesive film 3〇a and a polishing device 40, wherein the vacuum adsorption device 20 has a suction surface 21, the suction The gas surface 21 is provided with a plurality of suction holes 22 for providing a negative pressure, and the vacuum adsorption device 2 内 can house an air pump (not shown) to discharge the gas by the air pump to achieve a vacuum state, so that the plurality of suction holes 22 Negative pressure is provided at the office. The compliant adhesive film 30A has an adhesive surface 31 and an absorbing surface 32. The protective adhesive film 30A is a flexible plastic film which can be formed by coating a PVC film. The adhesive film 31 is adhered to the light-emitting diode wafer 10, and the adsorbed surface 32 is attached to the air suction surface 21 and covers the air suction hole 22 to allow the light-emitting diode wafer to be spaced apart. The protective adhesive film 30 A is adsorbed by the vacuum adsorption device 2 . Further, the polishing apparatus 4 has a polishing head 41 which is in rotational contact with the LED circle 10 to thin the LED wafer 1 . In the actual implementation, the plurality of light-emitting diode wafers 10 are simultaneously adsorbed for simultaneous polishing and polishing operations, and the implementation manners can be divided into two types, one of which is shown in FIG. 5, The size of the protective adhesive film 30A is set to correspond to the light-emitting diode wafer, that is, under each of the light-emitting diode wafers, the same size of the protective adhesive film is disposed correspondingly. 30A, which can save the material of the protective adhesive film 3〇A. 1012019516-0 1012〇592ί^ early number AO〗. 〖Page 5/Total IS page M434309 For another embodiment, please refer to FIG. 7 for setting the size of the protective adhesive film 30B corresponding to the suction surface 21 of the vacuum adsorption device 20, and the light emitting two The polar wafer 10 has a plurality of layers and is affixed to the adhesive surface 31, that is, a plurality of the LED wafers 10 are adhered to the same protective adhesive film 30B, which can reduce subsequent processes and needs to be- The trouble of the protective adhesive film 30B is removed. As described above, this creation relies on the toughness of the protective adhesive film,
完整貼附在該發光二極體晶圓的底部，因此可以透過增 加該發光二極體晶圓的結構強度，來保護該發光二極體 晶圓，故可以抵抗減薄作業所產生的應力破壞，避免該 發光二極體晶圓因為受力過大而破裂，或者避免長晶面 刮傷，其形成一種高良率的發光二極體晶圓減薄結構， 可滿足使用上的需要。The photodiode wafer is completely attached to the bottom of the LED wafer, so that the structure of the LED wafer can be increased to protect the LED wafer, thereby resisting the stress damage caused by the thinning operation. The light-emitting diode wafer is prevented from being broken due to excessive force, or the long crystal surface scratch is avoided, which forms a high-yield light-emitting diode wafer thinning structure, which can meet the needs of use.
以上已將本新型做一詳細說明，惟以上所述者，僅 爲本新型之一較佳實施例而已，當不能限定本新型實施 之範圍。即凡依本新型申請範圍所作之均等變化與修飾 等，皆應仍屬本新型之專利涵蓋範圍内。 【圖式簡單說明】 [0011] 圖1，為習知發光二極體晶圓結構圖。 [0012] 圖2，為習知發光二極體晶圓固定示意圖。 [0013] 圖3，為另一習知發光二極體晶圓固定示意圖。 [0014] 圖4，為另一習知發光二極體晶圓減薄示意圖。 [0015] 圖5，為本新型結構分解圖。 [0016] 圖6，為本新型結構組合圖。 1012019516-0 觀·产單編號A_ 第6頁/共15頁 M434309 圖7，為本新型另一實施結構分解圖。 [0017] 【主要元件符號說明】 [0018] 習知 1 :發光二極體晶圓 2:真空吸附固定裝置 3 :固定服 4 :工作台The present invention has been described in detail above, but the above description is only a preferred embodiment of the present invention, and the scope of the present invention is not limited. Any changes and modifications made in accordance with the scope of this new application shall remain within the scope of this new patent. BRIEF DESCRIPTION OF THE DRAWINGS [0011] FIG. 1 is a structural diagram of a conventional light-emitting diode wafer. 2 is a schematic diagram of a conventional light-emitting diode wafer fixing. 3 is a schematic view showing another conventional light-emitting diode wafer fixing. [0014] FIG. 4 is a schematic diagram of another conventional light-emitting diode wafer thinning. [0015] FIG. 5 is an exploded perspective view of the present invention. [0016] FIG. 6 is a structural combination diagram of the present invention. 1012019516-0 View and Production Order No. A_ Page 6 of 15 M434309 Figure 7 is an exploded view of another embodiment of the present invention. [Explanation of Main Component Symbols] [0018] Conventional 1: Light Emitting Diode Wafer 2: Vacuum Adsorption Fixing Device 3: Fixed Clothing 4: Workbench
[0019] [0020] [0021] [0022] [0023] 5:研磨裝置 [0024] 6 :研磨頭 [0025] 本創作 [0026] 10:發光二極體晶圓 [0027] 20:真空吸附裝置 [0028] 21 :吸氣面[0023] [0023] [0023] [0023] 5: Grinding device [0024] 6: Grinding head [0025] This creation [0026] 10: Light-emitting diode wafer [0027] 20: Vacuum adsorption device [0028] 21: suction surface
[0029] 22 :吸氣孔 [0030] 30A、30B :保護黏貼膜 [0031] 31 :黏貼面 [0032] 32:被吸附面 [0033] 40 :研磨裝置 [0034] 41 :研磨頭 10120592产單編號 A〇101 第7頁/共15頁 1012019516-0[0029] 22: suction hole [0030] 30A, 30B: protective adhesive film [0031] 31: adhesive surface [0032] 32: adsorbed surface [0033] 40: grinding device [0034] 41: grinding head 10120592 production form No. A〇101 Page 7 of 15 1012019516-0