TWI813791B - Wafer processing method - Google Patents

Wafer processing method Download PDF

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TWI813791B
TWI813791B TW108136971A TW108136971A TWI813791B TW I813791 B TWI813791 B TW I813791B TW 108136971 A TW108136971 A TW 108136971A TW 108136971 A TW108136971 A TW 108136971A TW I813791 B TWI813791 B TW I813791B
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wafer
sheet
base material
processing method
peeling
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TW108136971A
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TW202036728A (en
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木內人
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日商迪思科股份有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
    • H—ELECTRICITY
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02013—Grinding, lapping
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    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02016—Backside treatment
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
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    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
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    • H01L21/67005—Apparatus not specifically provided for elsewhere
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    • H01L21/67098—Apparatus for thermal treatment
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H—ELECTRICITY
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    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
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    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
    • H01L2221/68386—Separation by peeling

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Grinding Of Cylindrical And Plane Surfaces (AREA)
  • Dicing (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)

Abstract

本發明的課題，係提供即使藉由基材支持晶圓，對晶圓的背面進行加工，也不會降低裝置的品質之晶圓的加工方法。 依據本發明的解決手段，提供一種晶圓的加工方法，係至少由於與晶圓(10)同徑以上之基材(18)的上面配設比晶圓(10)小徑的剝離層(16)，並且將與晶圓(10)同徑以上的聚烯系薄片或聚酯系薄片之任一薄片(14)，隔著剝離層(16)鋪設於基材(18)的上面，並將晶圓(10)的表面(10a)定位且配設於薄片(14)的上面的晶圓配設工程、將隔著薄片(10)配設於基材(18)的晶圓(10)，在密閉環境內減壓，對薄片(10)進行加熱，並且按壓晶圓(10)，隔著薄片(14)將晶圓(10)熱壓接合於基材(18)的薄片熱壓接合工程、對晶圓(10)的背面(10b)施加加工的加工工程、及從薄片(10)剝離晶圓(10)的剝離工程所構成。An object of the present invention is to provide a wafer processing method that does not degrade the quality of the device even if the backside of the wafer is processed while the wafer is supported by a base material. According to the solution of the present invention, a wafer processing method is provided, which is at least because a peeling layer (16) with a smaller diameter than the wafer (10) is arranged on the base material (18) that is not less than the same diameter as the wafer (10). ), and any polyolefin-based sheet or polyester-based sheet (14) having the same diameter or more as the wafer (10) is laid on the base material (18) through the release layer (16), and The wafer placement process of positioning the surface (10a) of the wafer (10) and placing it on the upper surface of the sheet (14), placing the wafer (10) on the base material (18) through the sheet (10), The process of reducing pressure in a closed environment, heating the sheet (10), pressing the wafer (10), and thermocompression bonding the wafer (10) to the base material (18) through the sheet (14) It consists of a processing process for applying processing to the back surface (10b) of the wafer (10) and a peeling process for peeling off the wafer (10) from the sheet (10).

Description

晶圓的加工方法Wafer processing methods

本發明係關於對晶圓的背面進行加工之晶圓的加工方法。The present invention relates to a wafer processing method for processing the back side of the wafer.

IC、LSI等的複數裝置藉由預定分割線區劃，並形成於表面的晶圓，係藉由磨削裝置來磨削背面，加工成所定厚度之後，藉由切割裝置分割成各個裝置晶片，利用於手機、電腦等的電氣機器。A plurality of devices such as IC and LSI are divided by predetermined dividing lines and formed on the surface of the wafer. The back surface is ground by a grinding device and processed to a predetermined thickness, and then divided into individual device wafers by a cutting device. Used in electrical equipment such as mobile phones and computers.

近年來，為了謀求電器設備的小型化、輕量化，晶圓有加工成較薄的50μm、30μm的傾向。為了讓被磨削成如此薄的晶圓在搬送至下個工程時不破損，本發明人提案以將聚對苯二甲酸乙二脂(PET)、玻璃等作為素材，具有可獲得剛性程度之後度的基材來支持晶圓，對晶圓的背面進行磨削的技術(例如參照專利文獻1)。 [先前技術文獻] [專利文獻]In recent years, in order to achieve miniaturization and weight reduction of electrical equipment, wafers have tended to be processed into thinner layers of 50 μm and 30 μm. In order to prevent the wafers that have been ground so thin from being damaged when being transported to the next process, the inventors proposed to use polyethylene terephthalate (PET), glass, etc. as materials with an obtainable degree of rigidity. A technology that supports the wafer with a strong base material and grinds the back surface of the wafer (for example, see Patent Document 1). [Prior technical literature] [Patent Document]

[專利文獻1] 日本特開2004-296839號公報[Patent Document 1] Japanese Patent Application Publication No. 2004-296839

[發明所欲解決之課題][Problem to be solved by the invention]

在藉由基材支持晶圓時，採取於晶圓與基材的對合面塗布液狀樹脂、蠟等，或使用雙面膠帶來黏合的方法。但是，藉由液狀樹脂、蠟、雙面膠帶等，以基材支持晶圓的狀況中，難謂基材所致之保持力足夠，有在對晶圓的背面進行磨削時晶圓在基材上移動，導致磨削中晶圓破損的問題。尤其，於裝置的表面形成複數個稱為凸塊的突起電極的狀況中，有磨削時的應力會集中於突起電極而造成破損的問題。When the wafer is supported by a base material, liquid resin, wax, etc. is applied to the mating surfaces of the wafer and the base material, or double-sided tape is used for bonding. However, when the wafer is supported by a base material using liquid resin, wax, double-sided tape, etc., it is difficult to say that the holding force of the base material is sufficient, and the wafer may become unstable when grinding the back surface of the wafer. Movement on the substrate causes wafer breakage during grinding. In particular, when a plurality of protruding electrodes called bumps are formed on the surface of the device, there is a problem that stress during grinding is concentrated on the protruding electrodes, causing damage.

進而，磨削結束，從晶圓的表面剝離基材的話，液狀樹脂、蠟、雙面膠帶的膠劑等的一部分會附著殘存於電極，有降低從晶圓分割成個別後的裝置晶片的品質的問題。Furthermore, when the base material is peeled off from the surface of the wafer after grinding, part of the liquid resin, wax, double-sided adhesive tape, etc. will adhere to the electrodes and remain, possibly reducing the risk of device wafers being divided into individual wafers. Quality issues.

本發明係有鑑於前述事實所發明者，其主要的技術課題係提供即使藉由基材支持晶圓，對晶圓的背面進行加工，也不會降低裝置的品質之晶圓的加工方法。 [用以解決課題之手段]The present invention was invented in view of the above-mentioned facts, and its main technical subject is to provide a wafer processing method that does not degrade the quality of the device even if the wafer is supported by a base material and the back side of the wafer is processed. [Means used to solve problems]

為了解決前述主要技術課題，依據本發明，提供一種晶圓的加工方法，係對複數裝置藉由預定分割線區劃且形成於表面之晶圓的背面進行加工之晶圓的加工方法，其特徵為至少由以下工程所構成：晶圓配設工程，係於與晶圓同徑以上之基材的上面配設比晶圓小徑的剝離層，並且將與晶圓同徑以上的聚烯系薄片或聚酯系薄片之任一薄片，隔著該剝離層鋪設於基材的上面，並將晶圓的表面定位且配設於該薄片的上面；薄片熱壓接合工程，係將隔著該薄片配設於該基材的晶圓，在密閉環境內減壓，對該薄片進行加熱，並且按壓晶圓，隔著該薄片將晶圓熱壓接合於該基材；加工工程，係對晶圓的背面施加加工；及剝離工程，係從該薄片剝離晶圓。In order to solve the above-mentioned main technical problems, according to the present invention, a wafer processing method is provided, which is a wafer processing method for processing a plurality of devices divided by predetermined dividing lines and formed on the back surface of the wafer. The method is characterized by: It consists of at least the following processes: The wafer arrangement process is to arrange a peeling layer with a diameter smaller than that of the wafer on a base material that is the same diameter or larger than the wafer, and place a polyethylene sheet that is larger than the same diameter as the wafer. Or any thin sheet of polyester sheet, lay it on the base material through the peeling layer, and position the surface of the wafer on the top of the sheet; in the sheet thermocompression bonding process, the sheet will be The wafer arranged on the base material is decompressed in a closed environment, the sheet is heated, and the wafer is pressed, and the wafer is thermocompression bonded to the base material through the sheet; the processing process is to process the wafer The backside processing is applied; and the peeling process is to peel the wafer from the wafer.

該剝離層可包含紙、布、晶圓片、聚醯亞胺薄片的至少任一。又，在該加工工程中，可實施對晶圓的背面進行磨削的磨削加工。The release layer may include at least any one of paper, cloth, wafer, and polyimide sheet. Furthermore, in this processing process, a grinding process of grinding the back surface of the wafer can be performed.

聚烯系薄片，係藉由聚乙烯薄片、聚丙烯薄片、聚苯乙烯薄片的任一所構成為佳。於該薄片熱壓接合工程中，選擇該聚乙烯薄片時的加熱溫度為120～140℃，選擇該聚丙烯薄片時的加熱溫度為160～180℃，選擇該聚苯乙烯薄片時的加熱溫度為220～240℃為佳。The polyethylene sheet is preferably composed of any one of a polyethylene sheet, a polypropylene sheet, and a polystyrene sheet. In the sheet thermocompression bonding process, the heating temperature when selecting the polyethylene sheet is 120-140°C, the heating temperature when selecting the polypropylene sheet is 160-180°C, and the heating temperature when selecting the polystyrene sheet is 220~240℃ is better.

該聚酯系薄片，係藉由聚對苯二甲酸乙二酯薄片、聚對萘二甲酸乙二酯薄片的任一所構成為佳。於該薄片熱壓接合工程中，選擇該聚對苯二甲酸乙二酯薄片時的加熱溫度為250～270℃，選擇該聚對萘二甲酸乙二酯薄片的加熱溫度為160～180℃為佳。The polyester-based sheet is preferably composed of either a polyethylene terephthalate sheet or a polyethylene terephthalate sheet. In the sheet thermocompression bonding process, the heating temperature of the polyethylene terephthalate sheet is selected to be 250-270°C, and the heating temperature of the polyethylene terephthalate sheet is selected to be 160-180°C. good.

於該薄片熱壓接合工程中，以該薄片圍繞晶圓隆起之方式按壓晶圓為佳。 [發明的效果]In the wafer thermocompression bonding process, it is better to press the wafer in such a way that the wafer is raised around the wafer. [Effects of the invention]

本發明的晶圓的加工方法，係對複數裝置藉由預定分割線區劃且形成於表面之晶圓的背面進行加工之晶圓的加工方法，至少由在與晶圓同徑以上之基材的上面配設比晶圓小徑的剝離層，並且將與晶圓同徑以上的聚烯系薄片或聚酯系薄片之任一薄片，隔著該剝離層鋪設於基材的上面，並將晶圓的表面定位且配設於該薄片的上面的晶圓配設工程、將隔著該薄片配設於該基材的晶圓，在密閉環境內減壓，對該薄片進行加熱，並且按壓晶圓，隔著該薄片將晶圓熱壓接合於該基材的薄片熱壓接合工程、對晶圓的背面施加加工的加工工程、及從該薄片剝離晶圓的剝離工程所構成。藉此，晶圓係能以對於基材充分的保持力保持，即使對晶圓的背面施加磨削加工，晶圓也不會破損。又，即使於裝置的表面形成複數個突起電極(凸塊)的狀況中，突起電極也可藉由薄片被確實地保持，磨削時的應力被分散而消除破損的問題。進而，不使用液狀樹脂、蠟、雙面膠帶等，隔著薄片藉由熱壓接合使基材支持晶圓，故液狀樹脂、蠟、雙面膠帶的膠劑等不會附著殘存於裝置，也不會發生裝置的品質降低的問題。進而，由於將比晶圓小徑的剝離層配設於薄片與基材之間，可容易從基材剝離薄片。The wafer processing method of the present invention is a wafer processing method in which a plurality of devices are divided by predetermined dividing lines and formed on the back surface of the wafer. A peeling layer with a diameter smaller than that of the wafer is arranged on it, and either a polyethylene sheet or a polyester sheet that is the same diameter as the wafer is laid on the top of the base material through the peeling layer, and the wafer is In the wafer placement process of positioning the surface of a circle and placing it on the top of the sheet, the wafer is placed on the base material through the sheet, the pressure is reduced in a closed environment, the sheet is heated, and the wafer is pressed Circle, consisting of a sheet thermocompression bonding process for thermocompression bonding the wafer to the base material via the sheet, a processing process for processing the back surface of the wafer, and a peeling process for peeling off the wafer from the sheet. This allows the wafer to be held with sufficient holding force against the base material, and the wafer will not be damaged even if the back surface of the wafer is ground. Furthermore, even when a plurality of protruding electrodes (bumps) are formed on the surface of the device, the protruding electrodes can be reliably held by the sheet, and the stress during grinding is dispersed, eliminating the problem of breakage. Furthermore, liquid resin, wax, double-sided tape, etc. are not used, and the base material supports the wafer through thermocompression bonding through the sheet. Therefore, liquid resin, wax, double-sided tape glue, etc. do not adhere to the device and remain. , there will be no problem of device quality degradation. Furthermore, since a peeling layer having a smaller diameter than the wafer is disposed between the sheet and the base material, the sheet can be easily peeled off from the base material.

以下，針對本發明之晶圓的加工方法的實施形態，參照添附圖面詳細進行說明。Hereinafter, embodiments of the wafer processing method of the present invention will be described in detail with reference to the attached drawings.

於圖1(a)，揭示複數裝置11藉由預定分割線12區劃，形成於表面10a的晶圓10。於本實施形態中，晶圓10係其背面10b被加工。In FIG. 1( a ), it is revealed that a plurality of devices 11 are partitioned by predetermined dividing lines 12 and formed on the wafer 10 on the surface 10 a. In this embodiment, the back surface 10b of the wafer 10 is processed.

執行本實施形態之晶圓的加工方法時，首先，準備前述之晶圓10、薄片14、剝離層16、基材18。薄片14係與晶圓10同徑以上的薄片，選自聚烯系薄片、或聚酯系薄片中任一，在本實施形態中，選擇聚乙烯(PE)薄片。剝離層16係比晶圓10小徑之圓形狀的薄片，選擇不具有黏著性的薄膜的素材，例如紙。基材18係對於晶圓10呈同徑以上的圓形狀，例如選擇玻璃板。再者，剝離層16並不限定於紙，選自布、晶圓片、聚醯亞胺薄片亦可。又，基材18並不限定於玻璃，從於後述的熱壓接合工程中不受到熱影響且不軟化的合成樹脂，例如聚對苯二甲酸乙二脂(PET)形成亦可。When executing the wafer processing method of this embodiment, first, the aforementioned wafer 10 , sheet 14 , peeling layer 16 , and base material 18 are prepared. The sheet 14 is a sheet having the same diameter as the wafer 10 or more, and is selected from polyethylene sheets or polyester sheets. In this embodiment, a polyethylene (PE) sheet is selected. The peeling layer 16 is a circular sheet with a smaller diameter than the wafer 10 , and is made of a non-adhesive film, such as paper. The base material 18 has a circular shape with a diameter equal to or greater than that of the wafer 10 , and is, for example, a glass plate. Furthermore, the release layer 16 is not limited to paper, and may be selected from cloth, wafers, and polyimide sheets. In addition, the base material 18 is not limited to glass, and may be formed from a synthetic resin that is not affected by heat and does not soften in the thermocompression bonding process described below, such as polyethylene terephthalate (PET).

(晶圓配設工程) 實施晶圓配設工程時，首先，將基材18載置於成為實施後述之熱壓接合工程的熱壓接合裝置30(參照圖2)之保持手段的加熱台20的工作台表面22。工作台表面22係平坦面，於加熱台20的內部，內藏有未圖示的電熱器與溫度感測器。於載置於加熱台20的表面22的基材18上配設剝離層16。配設剝離層16時，使基材18的中心與剝離層16的中心一致為佳。如上所述，基材18係相對於晶圓10形成為同徑以上，由於剝離層16形成為比晶圓10小徑，於剝離層16的外側，成為基材18露出的狀態。(Wafer configuration engineering) When performing the wafer placement process, first, the base material 18 is placed on the table surface 22 of the heating table 20 that serves as a holding means for the thermocompression bonding device 30 (see FIG. 2 ) that performs the thermocompression bonding process described below. The workbench surface 22 is a flat surface, and an electric heater and a temperature sensor (not shown) are built inside the heating table 20 . The release layer 16 is provided on the base material 18 placed on the surface 22 of the heating stage 20 . When disposing the release layer 16, it is preferable that the center of the base material 18 coincides with the center of the release layer 16. As described above, the base material 18 is formed to have the same or larger diameter than the wafer 10 . Since the peeling layer 16 is formed to have a smaller diameter than the wafer 10 , the base material 18 is exposed outside the peeling layer 16 .

於基材18上配設剝離層16的話，進而於其上，鋪設薄片14(聚乙烯薄片)。將薄片14鋪設於基材18上時也使雙方中心一致。如上所述，剝離層16形成為比晶圓10小徑，薄片14係以相對於晶圓10同徑以上的圓形狀形成。所以，於基材18上鋪設薄片14時，於其中心區域存在剝離層16，薄片14的外周成為直接接觸基材18的外周的狀態。然後，於薄片14的上面，定位晶圓10的表面10a以背面10b露出於上方之方式配設。藉由以上內容，完成晶圓配設工程。When the release layer 16 is provided on the base material 18, the sheet 14 (polyethylene sheet) is further laid on it. When laying the sheet 14 on the base material 18, the centers of both sides are also aligned. As described above, the peeling layer 16 is formed to have a diameter smaller than that of the wafer 10 , and the sheet 14 is formed in a circular shape having the same or larger diameter as that of the wafer 10 . Therefore, when the sheet 14 is laid on the base material 18, the peeling layer 16 is present in the central region, and the outer periphery of the sheet 14 is in direct contact with the outer periphery of the base material 18. Then, on the upper surface of the sheet 14, the front surface 10a of the positioning wafer 10 is arranged so that the back surface 10b is exposed above. With the above content, the wafer configuration project is completed.

(熱壓接合工程) 前述之晶圓配設工程完成的話，接下來實施熱壓接合工程。熱壓接合工程係將隔著薄片14配設於基材18的晶圓10，在密閉環境內減壓病並對薄片14進行加熱，並且按壓晶圓10，隔著薄片14將晶圓10熱壓接合於基材18的工程。一邊參照圖2，一邊針對實施該薄片熱壓接合工程的熱壓接合裝置30的功能、作用進行說明。(Thermocompression bonding process) After the aforementioned wafer arrangement process is completed, the thermocompression bonding process will be carried out next. The thermocompression bonding process involves placing the wafer 10 on the base material 18 with the thin sheet 14 interposed therebetween, depressurizing and heating the thin sheet 14 in a closed environment, pressing the wafer 10, and then heating the wafer 10 through the thin sheet 14. The process of press-bonding to the base material 18. The function and action of the thermocompression bonding device 30 that performs the sheet thermocompression bonding process will be described with reference to FIG. 2 .

熱壓接合裝置30係具備內藏前述之電熱器、及溫度感測器(任一皆省略圖示)的加熱台20、載置固定加熱台20的支持基台32、形成於支持基台32的吸引孔34、用以使包含加熱台20之支持基台32上的空間S成為密閉空間的密閉護蓋構件36。再者，密閉護蓋構件36係覆蓋支持基台32之上面整體的箱型構件，在揭示熱壓接合裝置30的側視圖的圖2(a)中，為了便利說明內部的構造，僅密閉護蓋構件36揭示剖面。The thermocompression bonding device 30 includes a heating stage 20 incorporating the aforementioned electric heater and a temperature sensor (either of which is omitted from the illustration), a supporting base 32 on which the heating stage 20 is mounted and fixed, and a support base 32 formed on the supporting base 32 . The suction hole 34 and the sealing cover member 36 are used to make the space S on the support base 32 including the heating stage 20 a sealed space. Furthermore, the airtight cover member 36 is a box-shaped member that covers the entire upper surface of the support base 32. In FIG. 2(a) showing a side view of the thermocompression bonding device 30, only the airtight cover member 36 is used to facilitate explanation of the internal structure. Cover member 36 reveals a cross-section.

於密閉護蓋36的上壁36a的中央，貫通按壓構件38的支持軸38a，形成用以進退於箭頭Z所示上下方向的開口36b。於開口36b的周圍，為了一邊使支持軸38a往上下進退，一邊將密閉護蓋構件36的空間S與外部遮斷而作為密閉環境，形成密封構造36c。於支持軸38a的下端，配設按壓板38b。按壓板38b係形成為至少比晶圓10大徑的圓盤形狀，理想是以與加熱台20同徑程度的尺寸設定。於密閉護蓋構件36的下端面，涵蓋全周適當配設彈性密封構件為佳(省略圖示)。又，於按壓構件38的上方，配設用以使按壓構件38進退於上下方向之未圖示的驅動手段。In the center of the upper wall 36a of the sealing cover 36, the support shaft 38a of the pressing member 38 is penetrated, and an opening 36b for moving forward and backward in the up and down direction indicated by arrow Z is formed. A sealing structure 36c is formed around the opening 36b in order to block the space S of the sealing cover member 36 from the outside as a sealed environment while moving the support shaft 38a up and down. A pressing plate 38b is provided at the lower end of the support shaft 38a. The pressing plate 38 b is formed in a disc shape with a diameter at least larger than that of the wafer 10 , and is ideally set to have a size approximately the same diameter as the heating stage 20 . It is preferable that an elastic sealing member is appropriately disposed covering the entire circumference of the lower end surface of the sealing cover member 36 (not shown). In addition, a driving means (not shown) for moving the pressing member 38 forward and backward in the up and down direction is provided above the pressing member 38 .

藉由前述之晶圓配設工程，於包含載置晶圓10之加熱台20的支持基台32上，使密閉護蓋構件36下降，將空間S設為密閉環境。此時，按壓板38b係如圖2(a)所示，抬起至不接觸晶圓10的上面的上方位置。Through the aforementioned wafer arrangement process, the sealing cover member 36 is lowered on the support base 32 including the heating table 20 on which the wafer 10 is mounted, and the space S is made into a sealed environment. At this time, the pressing plate 38b is lifted to an upper position not contacting the upper surface of the wafer 10 as shown in FIG. 2(a) .

形成於密閉護蓋構件36的內部的空間S成為密閉環境的話，未圖示的吸引手段動作，透過吸引孔34吸引空間S的空氣，將包含晶圓10的區域減壓至接近真空的狀態為止。同時，使內藏於加熱台20之未圖示的電熱器、及溫度感測器動作，控制加熱台20的上面22的溫度。具體來說，將構成薄片14的聚乙烯薄片以成為熔融溫度附近的120～140℃之方式進行加熱。進而，使未圖示的驅動手段動作，讓按壓板38b往箭頭Z所示方向下降，以均等的力按壓晶圓10的整個上面。收容晶圓10的空間S係被減壓至接近真空的狀態為止，從晶圓10、薄片14、剝離層16及基材18的各對合面適當吸引去除空氣。然後，薄片14係藉由加熱至上述之薄片14的熔融溫度附近(120～140℃)為止，一邊軟化一邊發揮黏著性，晶圓10、薄片14、剝離層16及基材18以圖2(b)的剖面圖所示的狀態進行熱壓接合。剝離層16係選擇即使加熱也不會發揮黏著性的素材(紙)，剝離層16的配設位置成為大略真空狀態，薄片14與基材18係在外周區域熱壓接合。再者，此時，藉由利用按壓板38b按壓晶圓10，如圖2(b)所示，配設於晶圓10的正下方，軟化的薄片14的外周隆起，形成圍繞晶圓10的外周的隆起部14a，更強固地固定晶圓10。如此一來，完成熱壓接合工程，形成晶圓10、薄片14、剝離層16、基材18成為一體的一體化晶圓W。When the space S formed inside the airtight cover member 36 becomes a sealed environment, a suction means (not shown) operates to suck the air in the space S through the suction holes 34 and depressurize the area including the wafer 10 until it is close to a vacuum state. . At the same time, an electric heater and a temperature sensor (not shown) built in the heating stage 20 are operated to control the temperature of the upper surface 22 of the heating stage 20 . Specifically, the polyethylene sheet constituting the sheet 14 is heated to 120 to 140° C. near the melting temperature. Furthermore, the driving means (not shown) is operated to lower the pressing plate 38b in the direction indicated by the arrow Z, thereby pressing the entire upper surface of the wafer 10 with a uniform force. The space S housing the wafer 10 is decompressed to a state close to a vacuum, and air is appropriately sucked and removed from the mating surfaces of the wafer 10 , the sheet 14 , the peeling layer 16 and the base material 18 . Then, the sheet 14 is heated to a temperature close to the melting temperature of the sheet 14 (120 to 140° C.), thereby softening and developing adhesive properties. The wafer 10, the sheet 14, the peeling layer 16 and the base material 18 are as shown in Figure 2 ( Thermocompression bonding is performed in the state shown in the cross-sectional view of b). The peeling layer 16 is made of a material (paper) that does not exhibit adhesiveness even when heated. The position where the peeling layer 16 is disposed is in a roughly vacuum state, and the sheet 14 and the base material 18 are thermocompression bonded in the outer peripheral region. Furthermore, at this time, by pressing the wafer 10 with the pressing plate 38b, which is arranged directly below the wafer 10 as shown in FIG. The raised portion 14a on the outer periphery fixes the wafer 10 more firmly. In this way, the thermocompression bonding process is completed, and an integrated wafer W is formed in which the wafer 10 , the sheet 14 , the peeling layer 16 , and the base material 18 are integrated.

(加工工程) 前述之熱壓接合工程完成，形成一體化晶圓W的話，則實施對晶圓10的背面進行加工的加工工程。本實施形態的加工工程，係實施磨削背面10b的磨削加工者，一邊參照圖3、圖4一邊更具體進行說明。(Processing Engineering) After the aforementioned thermocompression bonding process is completed and the integrated wafer W is formed, a processing process of processing the back surface of the wafer 10 is performed. The machining process of this embodiment is performed by grinding the back surface 10b, and will be described in more detail with reference to FIGS. 3 and 4 .

於圖3，揭示磨削裝置50(僅揭示一部分)的吸盤台52，吸盤台52的上面係以由具有通氣性之多孔陶瓷所成的吸附盤54構成。於該吸附盤54上，將一體化晶圓W的基材18側朝下載置。於吸附盤54上載置了一體化晶圓W的話，則使連接於吸盤台52之未圖示的吸引手段動作，吸引保持一體化晶圓W。3 shows the suction cup table 52 of the grinding device 50 (only part of which is shown). The upper surface of the suction cup table 52 is composed of a suction disk 54 made of breathable porous ceramics. On the suction pad 54, the integrated wafer W is placed with the base material 18 side facing downward. When the integrated wafer W is placed on the suction pad 54, a suction means (not shown) connected to the suction pad stage 52 is operated to attract and hold the integrated wafer W.

如圖4所示，磨削裝置50係具備用以磨削且薄化被吸引保持於吸盤台52上的晶圓10之背面10b的磨削手段60。磨削手段60係具備藉由未圖示的旋轉驅動裝置進行旋轉的旋轉主軸62、安裝於旋轉主軸62的下端的貼片機64、安裝於貼片機64的下面的磨削輪66，於磨削輪66的下面，複數磨削砥石68配設成環狀。As shown in FIG. 4 , the grinding device 50 is provided with a grinding means 60 for grinding and thinning the back surface 10 b of the wafer 10 that is attracted and held on the suction cup table 52 . The grinding means 60 includes a rotary spindle 62 that is rotated by a rotary drive device (not shown), a mounter 64 mounted on the lower end of the rotary spindle 62, and a grinding wheel 66 mounted on the lower surface of the mounter 64. Under the grinding wheel 66, a plurality of grinding stones 68 are arranged in an annular shape.

將一體化晶圓W吸引保持於吸盤台52上的話，一邊使磨削手段60的旋轉主軸62往圖4中箭頭R1所示方向，例如以6000rpm旋轉，一邊使吸盤台52往圖4中箭頭R2所示方向，例如以300rpm旋轉。然後，藉由未圖示的磨削水供給手段，一邊將磨削水供給至露出於一體化晶圓W的上面的晶圓10，一邊使磨削砥石68接觸晶圓10的背面10b，將支持磨削砥石68的磨削輪66，例如以1μm/秒的磨削進送速度朝向下方進行磨削進送。此時，可一邊藉由未圖示的厚度檢測裝置測定晶圓10的厚度，一邊進行磨削，將晶圓10的背面10b磨削所定量，將晶圓10設為所定厚度(例如50μm)，停止磨削手段60。如此一來，完成對晶圓10的背面10b進行磨削的加工工程。如上所述，在本實施形態中，將晶圓10隔著由聚乙烯薄片所成的薄片14，藉由熱壓接合讓基材18支持。藉此發揮充分的保持力，即使對於晶圓10的背面10b實施磨削加工，晶圓10也不會移動，故可防止破損的狀況。尤其，在本實施形態中，隔著薄片14將晶圓10熱壓接合於基材18時，於薄片14的外周形成圍繞晶圓10的隆起部14a，藉此，可更提升保持晶圓10的保持力。進而，由於將晶圓10對於基材18，隔著薄片14進行支持，即使於裝置11的表面形成複數個突起電極的狀況中，該突起電極也可藉由薄片14被確實地保持，磨削時的應力被分散而消除突起電極破損的問題。To suction and hold the integrated wafer W on the suction cup table 52, the rotating spindle 62 of the grinding means 60 is rotated in the direction indicated by the arrow R1 in FIG. 4, for example, at 6000 rpm, while the suction cup table 52 is rotated in the direction indicated by the arrow R1 in FIG. 4. The direction indicated by R2 is, for example, rotating at 300rpm. Then, while supplying grinding water to the wafer 10 exposed on the upper surface of the integrated wafer W by a grinding water supply means (not shown), the grinding stone 68 is brought into contact with the back surface 10 b of the wafer 10 , thereby The grinding wheel 66 supporting the grinding stone 68 grinds and feeds downward at a grinding feed speed of 1 μm/second, for example. At this time, grinding can be performed while measuring the thickness of the wafer 10 with a thickness detection device (not shown), and the back surface 10 b of the wafer 10 can be ground by a predetermined amount to set the wafer 10 to a predetermined thickness (for example, 50 μm). , stop grinding means 60. In this way, the processing process of grinding the back surface 10b of the wafer 10 is completed. As described above, in this embodiment, the wafer 10 is supported by the base material 18 via thermocompression bonding via the sheet 14 made of a polyethylene sheet. As a result, sufficient holding force is exerted, and even if the back surface 10 b of the wafer 10 is ground, the wafer 10 will not move, thereby preventing damage. In particular, in this embodiment, when the wafer 10 is thermocompression bonded to the base material 18 via the sheet 14 , a raised portion 14 a surrounding the wafer 10 is formed on the outer periphery of the sheet 14 , whereby the wafer 10 can be held more efficiently. of holding power. Furthermore, since the wafer 10 is supported on the base material 18 via the sheet 14, even if a plurality of protruding electrodes are formed on the surface of the device 11, the protruding electrodes can be reliably held by the sheet 14 and ground. The stress is dispersed and the problem of breakage of the protruding electrodes is eliminated.

(剝離工程) 上述之對晶圓10的背面10b進行加工的加工工程完成的話，從磨削裝置50搬出一體化晶圓W，搬送至用以實施圖5(a)所示之剝離工程的保持手段70。保持手段70的上面係與前述之吸盤台52同樣地，連接藉由具有通氣性的吸附盤72形成，未圖示的吸引手段。(stripping project) When the above-mentioned process of processing the back surface 10 b of the wafer 10 is completed, the integrated wafer W is unloaded from the grinding device 50 and transferred to the holding means 70 for performing the peeling process shown in FIG. 5( a ). The upper surface of the holding means 70 is connected to a suction means (not shown) formed by a suction disc 72 having air permeability, similar to the aforementioned suction cup stand 52 .

搬送至保持手段70的一體化晶圓W係將晶圓10的背面10b側朝下，將基材18朝向上方，載置於吸附盤72上。於吸附盤72載置了一體化晶圓W的話，則使未圖示的吸引手段動作，吸引保持一體化晶圓W。The integrated wafer W transported to the holding means 70 is placed on the suction pad 72 with the back surface 10 b side of the wafer 10 facing downward and the base material 18 facing upward. When the integrated wafer W is placed on the suction pad 72, a suction means (not shown) is operated to attract and hold the integrated wafer W.

於保持手段70吸引保持一體化晶圓W的話，如圖5(b)所示，在將一體化晶圓W中晶圓10殘留於吸引手段70的狀態下，剝離基材18、剝離層16、薄片14。此時，對一體化晶圓W進行加熱或冷卻為佳。薄片14係如上所述利用加熱而軟化，故即使有黏著力也會成為易從晶圓10剝離的狀態。又，利用冷卻，薄片14硬化而黏著力降低，故即使藉由進行冷卻，也會成為容易剝離的狀態。關於實施剝離工程時，應實施加熱、冷卻中任一，可考慮構成薄片14的素材及薄片14的黏著力等來選擇。再者，在圖5(b)中，揭示一體化晶圓W中，基材18、剝離層16、薄片14成為一體的狀態下剝離之狀態，但是，並不一定限定於一體性剝離，首先，僅剝離基材18，之後，將剝離層16與薄片14一起從晶圓10的表面10a剝離亦可。藉由以上內容，完成剝離工程。When the integrated wafer W is sucked and held by the holding means 70, as shown in FIG. 5(b), the base material 18 and the peeling layer 16 are peeled off while the wafer 10 in the integrated wafer W remains in the suction means 70. , flakes 14. At this time, it is preferable to heat or cool the integrated wafer W. The sheet 14 is softened by heating as described above, and therefore becomes easily peeled off from the wafer 10 even if it has adhesive force. In addition, the sheet 14 is hardened by cooling and the adhesive force is reduced. Therefore, even by cooling, the sheet 14 is easily peeled off. When performing the peeling process, either heating or cooling should be performed, and the selection can be made taking into consideration the material constituting the sheet 14 and the adhesive force of the sheet 14 . Furthermore, FIG. 5(b) shows a state in which the base material 18, the peeling layer 16, and the sheet 14 are integrated into the integrated wafer W and are peeled off. However, this is not necessarily limited to integral peeling. First, , only the base material 18 may be peeled off, and then the peeling layer 16 together with the sheet 14 may be peeled off from the surface 10 a of the wafer 10 . With the above content, the stripping project is completed.

於本實施形態中，不使用液狀樹脂、蠟、雙面膠帶，透過藉由加熱以發揮黏著力的薄片14來使基材18支持晶圓10。藉此，即使從晶圓10剝離薄片14，也不會發生液狀樹脂、蠟、雙面膠帶的膠劑等附著殘存於構成突起電極的凸塊周邊的問題，不會造成裝置的品質降低。進而，在薄片14與基材18之間，由於使比晶圓10小徑的剝離層16在真空狀態下存在且僅外周進行熱壓接合，從基材18剝離薄片14的過程中空氣進入剝離層16的區域，可容易剝離被熱壓接合的薄片14，提升作業性。In this embodiment, liquid resin, wax, and double-sided tape are not used, and the base material 18 supports the wafer 10 through the sheet 14 that exerts adhesive force by heating. Thereby, even if the sheet 14 is peeled off from the wafer 10 , there will be no problem that liquid resin, wax, double-sided adhesive tape, etc. adhere to and remain around the bumps constituting the bump electrodes, and the quality of the device will not be degraded. Furthermore, since the peeling layer 16 having a smaller diameter than the wafer 10 exists in a vacuum state between the sheet 14 and the base material 18 and only the outer periphery is thermocompression bonded, air enters during the peeling process of the sheet 14 from the base material 18 . In the area of layer 16, the sheet 14 bonded by thermocompression can be easily peeled off, thereby improving workability.

再者，在前述的實施形態中，藉由聚乙烯薄片構成薄片14，但本發明並不限定於此。作為不使用液狀樹脂、雙面膠帶、蠟等而可將晶圓10支持於基材18的薄片14，可從聚烯系薄片、聚酯系薄片中適當選擇。作為聚烯系薄片，除了前述的聚乙烯薄片之外，例如可選擇聚丙烯(PP)薄片、聚苯乙烯(PS)薄片。又，作為聚酯系薄片，例如可選擇聚對苯二甲酸乙二脂(PET)薄片、聚萘二酸乙二醇酯(PEN)薄片。Furthermore, in the aforementioned embodiment, the sheet 14 is formed of a polyethylene sheet, but the present invention is not limited to this. The sheet 14 that can support the wafer 10 on the base material 18 without using liquid resin, double-sided tape, wax, or the like can be appropriately selected from polyolefin-based sheets and polyester-based sheets. As the polyolefin sheet, in addition to the aforementioned polyethylene sheet, for example, polypropylene (PP) sheet and polystyrene (PS) sheet can be selected. In addition, as the polyester-based sheet, for example, polyethylene terephthalate (PET) sheet or polyethylene naphthalate (PEN) sheet can be selected.

在前述的實施形態中，將熱壓接合工程中對薄片14進行加熱時的溫度，設定為聚乙烯薄片的熔點附近的溫度(120～140℃)，但是，如上所述，作為薄片14選擇其他薄片所構成的狀況中，以成為所選擇之薄片的素材之熔點附近的溫度之方式進行加熱為佳。例如，以聚丙烯薄片構成薄片14時，將加熱時的溫度設定設為160～180℃，以聚苯乙烯薄片構成薄片14時，將加熱時的溫度設為220～240℃為佳。又，以聚對苯二甲酸乙二酯薄片構成薄片14時，將加熱時的溫度設定設為250～270℃，以聚對萘二甲酸乙二酯薄片構成薄片14時，將加熱時的溫度設為160～180℃為佳。再者，如上所述，以合成樹脂構成基材18時，則要求熱壓接合時不受到熱影響。因此，以聚對苯二甲酸乙二酯薄片構成薄片14時，以玻璃構成基材18為佳。In the above-mentioned embodiment, the temperature at which the sheet 14 is heated in the thermocompression bonding process is set to a temperature near the melting point of the polyethylene sheet (120 to 140° C.). However, as mentioned above, the sheet 14 may be other than the melting point of the polyethylene sheet. In the case of a thin sheet, it is preferable to heat the material to a temperature near the melting point of the selected thin sheet material. For example, when the sheet 14 is made of a polypropylene sheet, the heating temperature is preferably set to 160 to 180°C. When the sheet 14 is made of a polystyrene sheet, the heating temperature is preferably set to 220 to 240°C. When the sheet 14 is made of a polyethylene terephthalate sheet, the temperature during heating is set to 250 to 270°C. When the sheet 14 is made of a polyethylene terephthalate sheet, the temperature during heating is set to 250 to 270°C. It is better to set it to 160~180℃. Furthermore, as mentioned above, when the base material 18 is made of synthetic resin, it is required that the base material 18 is not affected by heat during thermocompression bonding. Therefore, when the sheet 14 is made of a polyethylene terephthalate sheet, it is preferable that the base material 18 is made of glass.

在前述的實施形態中，以圓形狀形成剝離層16，但不一定需要作為圓形，只要比晶圓10小徑，薄片14與基材18可在外周區域接著的形狀的話，該形狀並未特別限定。In the above-described embodiment, the peeling layer 16 is formed in a circular shape. However, it does not necessarily need to be a circular shape. As long as the shape is smaller than the wafer 10 and the sheet 14 and the base material 18 can be connected in the peripheral area, the shape does not need to be a circular shape. Specially limited.

在前述的實施形態中，已針對作為對晶圓10的背面10b進行加工的加工工程，實施對晶圓10的背面10b進行磨削的磨削加工之狀況進行說明，但本發明並不限定於此，適用於實施對晶圓10的背面10b進行研磨的研磨工程者、從晶圓10的背面10b藉由切削刀實施切削加工者、實施從晶圓10的背面10b照射雷射光線的雷射加工者等。In the above-mentioned embodiment, the situation in which the grinding process of grinding the back surface 10b of the wafer 10 is performed as a processing process for processing the back surface 10b of the wafer 10 has been described. However, the present invention is not limited thereto. This is suitable for those who polish the back surface 10b of the wafer 10, those who perform cutting processing from the back surface 10b of the wafer 10 with a cutting blade, and those who perform laser irradiation of laser light from the back surface 10b of the wafer 10. Processors etc.

又，在前述的實施形態中，藉由圖2(a)所示的裝置實施熱壓接合，但本發明並不限定於此，也可實施使用具備未圖示之加熱手段的輥，一邊按壓晶圓10側的全面，一邊將薄片14加熱至所希望的溫度，隔著薄片14，熱壓接合晶圓10、及基材18的薄片熱壓接合工程。Furthermore, in the aforementioned embodiment, the thermocompression bonding is performed using the device shown in FIG. 2(a) . However, the present invention is not limited thereto. A roller equipped with a heating means not shown in the figure may also be used to perform the thermocompression bonding while pressing. The sheet thermocompression bonding process is performed by heating the sheet 14 to a desired temperature across the entire surface of the wafer 10 side, and thermocompression bonding the wafer 10 and the base material 18 through the sheet 14 .

10:晶圓 10a:表面 10b:背面 11:裝置 12:預定分割線 14:薄片 14a:隆起部 16:剝離層 18:基材 20:加熱台 30:熱壓接合裝置 32:支持基台 34:吸引孔 36:密閉護蓋構件 36a:上壁 36b:開口 36c:密封構造 38:按壓構件 38a:支持軸 38b:按壓板 50:磨削裝置 52:吸盤台 54:吸附盤 60:磨削手段 62:旋轉主軸 64:貼片機 66:磨削輪 68:磨削砥石 70:保持手段10:wafer 10a: Surface 10b: Back 11:Device 12: Predetermined dividing line 14: thin slices 14a: bulge 16: peeling layer 18:Substrate 20:Heating table 30:Thermocompression bonding device 32: Support base 34:Suction hole 36: Sealing cover component 36a:Upper wall 36b:Open your mouth 36c: Sealed structure 38: Press component 38a: Support shaft 38b: Press plate 50:Grinding device 52:Suction cup table 54:Adsorption disc 60:Grinding means 62: Rotating spindle 64:SMT machine 66:Grinder wheel 68:Grinding stone 70:Keep Means

[圖1] 揭示晶圓配設工程之實施樣態的立體圖。 [圖2] (a)實施薄片熱壓接合工程的熱壓接合裝置的側視圖，(b)藉由薄片熱壓接合工程所形成之一體化晶圓的剖面圖。 [圖3] 揭示將一體化晶圓載置於實施加工工程之磨削裝置的吸盤台之樣態的立體圖。 [圖4] 揭示使用磨削裝置的磨削加工之實施樣態的立體圖。 [圖5] (a)揭示將一體化晶圓載置於剝離用的保持手段之樣態的立體圖，(b)揭示從晶圓剝離基材的剝離工程之實施樣態的立體圖。[Figure 1] A perspective view showing how the wafer placement process is carried out. [Figure 2] (a) Side view of a thermocompression bonding device that performs the wafer thermocompression bonding process, (b) Cross-sectional view of an integrated wafer formed by the wafer thermocompression bonding process. [Fig. 3] A perspective view showing a state in which an integrated wafer is placed on a suction cup table of a grinding device for performing processing. [Fig. 4] A perspective view showing how grinding processing using a grinding device is carried out. [Fig. 5] (a) A perspective view showing a state in which the integrated wafer is placed on a holding means for peeling, and (b) a perspective view showing a state in which the peeling process of peeling off the base material from the wafer is performed.

10:晶圓 10:wafer

10b:背面 10b: Back

14:薄片 14: thin slices

14a:隆起部 14a: bulge

16:剝離層 16: peeling layer

18:基材 18:Substrate

20:加熱台 20:Heating table

32:支持基台 32: Support base

34:吸引孔 34:Suction hole

36:密閉護蓋構件 36: Sealing cover component

36a:上壁 36a:Upper wall

36b:開口 36b:Open your mouth

36c:密封構造 36c: Sealed structure

38:按壓構件 38: Press component

38a:支持軸 38a: Support shaft

38b:按壓板 38b: Press plate

Claims (7)

一種晶圓的加工方法，係對複數裝置藉由預定分割線區劃且形成於表面之晶圓的背面進行加工之晶圓的加工方法，其特徵為至少由以下工程所構成：晶圓配設工程，係於比晶圓大徑之基材的上面配設比晶圓小徑且即使加熱也不會發揮黏著性的素材所致之剝離層，並且將與晶圓同徑以上的聚烯系薄片或聚酯系薄片之任一薄片，隔著該剝離層鋪設於基材的上面，並將晶圓的表面定位且配設於該薄片的上面；薄片熱壓接合工程，係將隔著該薄片配設於該基材的晶圓，在密閉環境內減壓，對該薄片進行加熱而使其發揮黏著性，並且按壓晶圓，隔著該薄片將晶圓熱壓接合於該基材；加工工程，係對晶圓的背面施加加工；及剝離工程，係從該薄片剝離晶圓；於該薄片熱壓接合工程中，以該薄片圍繞晶圓隆起之方式按壓晶圓；該剝離層，係於該加工工程後的該剝離工程中從該基材剝離。 A wafer processing method for processing a plurality of devices on the back side of a wafer divided by predetermined dividing lines and formed on the surface, characterized by at least consisting of the following processes: wafer arrangement process , a peeling layer made of a material that is smaller than the wafer and does not exhibit adhesiveness even when heated is placed on a base material that is larger than the wafer, and a polyolefin sheet with the same diameter or more as the wafer is placed on it. Or any thin sheet of polyester sheet, lay it on the base material through the peeling layer, and position the surface of the wafer on the top of the sheet; in the sheet thermocompression bonding process, the sheet will be The wafer arranged on the base material is decompressed in a closed environment, the sheet is heated to exert adhesiveness, and the wafer is pressed, and the wafer is thermocompression bonded to the base material through the sheet; processing The process is to apply processing to the back side of the wafer; and the peeling process is to peel the wafer from the sheet; in the sheet thermocompression bonding process, the wafer is pressed in such a way that the sheet is raised around the wafer; the peeling layer is It is peeled off from the base material in the peeling process after the processing process. 如申請專利範圍第1項所記載之晶圓的加工方法，其中，該剝離層，係包含紙、布、晶圓片(oblate)、聚醯亞 胺薄片的至少任一。 For example, in the wafer processing method described in item 1 of the patent application, the peeling layer includes paper, cloth, oblate, polyethylene, etc. At least any of the amine flakes. 如申請專利範圍第1項或第2項所記載之晶圓的加工方法，其中，於該加工工程中，實施對晶圓的背面進行磨削的磨削加工。 For example, the wafer processing method described in Item 1 or 2 of the patent application, wherein in the processing process, a grinding process of grinding the back surface of the wafer is performed. 如申請專利範圍第1項或第2項所記載之晶圓的加工方法，其中，聚烯系薄片，係藉由聚乙烯薄片、聚丙烯薄片、聚苯乙烯薄片的任一所構成。 For example, in the wafer processing method described in claim 1 or 2, the polyolefin sheet is composed of any one of polyethylene sheet, polypropylene sheet, and polystyrene sheet. 如申請專利範圍第4項所記載之晶圓的加工方法，其中，於該薄片熱壓接合工程中，該聚乙烯薄片的加熱溫度為120~140℃，該聚丙烯薄片的加熱溫度為160~180℃，該聚苯乙烯薄片的加熱溫度為220~240℃。 For example, in the wafer processing method described in item 4 of the patent application, in the sheet thermocompression bonding process, the heating temperature of the polyethylene sheet is 120~140°C, and the heating temperature of the polypropylene sheet is 160~ 180℃, the heating temperature of the polystyrene sheet is 220~240℃. 如申請專利範圍第1項或第2項所記載之晶圓的加工方法，其中，該聚酯系薄片，係藉由聚對苯二甲酸乙二酯薄片、聚對萘二甲酸乙二酯薄片的任一所構成。 For example, the wafer processing method described in item 1 or 2 of the patent application scope, wherein the polyester sheet is made of polyethylene terephthalate sheet or polyethylene terephthalate sheet. composed of any one. 如申請專利範圍第6項所記載之晶圓的加工方法，其 中，於該薄片熱壓接合工程中，該聚對苯二甲酸乙二酯薄片的加熱溫度為250~270℃，該聚對萘二甲酸乙二酯薄片的加熱溫度為160~180℃。 For example, the wafer processing method described in item 6 of the patent application scope is In the heat-pressure bonding process of the sheets, the heating temperature of the polyethylene terephthalate sheet is 250~270°C, and the heating temperature of the polyethylene terephthalate sheet is 160~180°C.
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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090130795A1 (en) * 2007-11-21 2009-05-21 Trustees Of Columbia University Systems and methods for preparation of epitaxially textured thick films
TW201201304A (en) * 2010-06-21 2012-01-01 Brewer Science Inc Method and apparatus for removing a reversibly mounted device wafer from a carrier substrate
JP2013243350A (en) * 2012-04-24 2013-12-05 Shin Etsu Chem Co Ltd Wafer processed body, wafer processing member, wafer processing temporary adhesive material, and manufacturing method for thin wafer
JP2014088523A (en) * 2012-10-31 2014-05-15 Nitto Denko Corp Adhesive sheet for manufacturing semiconductor device, and method for manufacturing semiconductor device
TW201630734A (en) * 2014-10-23 2016-09-01 Lintec Corp Surface protective sheet

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004296839A (en) 2003-03-27 2004-10-21 Kansai Paint Co Ltd Method for manufacturing semiconductor chip
JP2011029450A (en) * 2009-07-27 2011-02-10 Disco Abrasive Syst Ltd Method of processing wafer
JP5762213B2 (en) * 2011-08-15 2015-08-12 株式会社ディスコ Grinding method for plate
CN104412369B (en) * 2012-06-29 2017-05-24 日立化成株式会社 Method for producing semiconductor device
WO2017077957A1 (en) * 2015-11-04 2017-05-11 リンテック株式会社 Method for manufacturing semiconductor device
JP6587519B2 (en) * 2015-11-18 2019-10-09 日東電工株式会社 Sheet-like resin composition, laminated sheet, and method for manufacturing semiconductor device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090130795A1 (en) * 2007-11-21 2009-05-21 Trustees Of Columbia University Systems and methods for preparation of epitaxially textured thick films
TW201201304A (en) * 2010-06-21 2012-01-01 Brewer Science Inc Method and apparatus for removing a reversibly mounted device wafer from a carrier substrate
JP2013243350A (en) * 2012-04-24 2013-12-05 Shin Etsu Chem Co Ltd Wafer processed body, wafer processing member, wafer processing temporary adhesive material, and manufacturing method for thin wafer
JP2014088523A (en) * 2012-10-31 2014-05-15 Nitto Denko Corp Adhesive sheet for manufacturing semiconductor device, and method for manufacturing semiconductor device
TW201630734A (en) * 2014-10-23 2016-09-01 Lintec Corp Surface protective sheet

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