TW201946142A - Wafer processing method capable of dicing wafer without degrading device quality - Google Patents

Wafer processing method capable of dicing wafer without degrading device quality Download PDF

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TW201946142A
TW201946142A TW108114539A TW108114539A TW201946142A TW 201946142 A TW201946142 A TW 201946142A TW 108114539 A TW108114539 A TW 108114539A TW 108114539 A TW108114539 A TW 108114539A TW 201946142 A TW201946142 A TW 201946142A
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wafer
sheet
processing method
cutting
polyethylene
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TW108114539A
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TWI813674B (en
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大前卷子
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日商迪思科股份有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
    • H01L2221/68386—Separation by peeling

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Dicing (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

The present invention provides a wafer processing method for dicing wafer without degrading device quality, wherein the wafer is formed with a plurality of devices composed of metal patterns through deposition on the upper surface of a glass substrate. The wafer processing method of the present invention includes at least the following steps: a sheet press-bonding step for laying polyolefin-based or polyester-based sheet on the front surface of a wafer and heating so as to thermally press-bond the sheet onto the front surface of the wafer; a wafer supporting step for adhering the dicing adhesive onto the back surface of the wafer and adhering a ring-shaped frame onto the dicing adhesive tape, wherein the ring-shaped frame is provided with an opening for receiving the wafer; a dividing step for supplying cutting water while rotating the cutting knife having a ring-shaped cutting edge on the outer periphery to dice along a predetermined dicing line on the wafer together with the sheet to dice the wafer into individual devices; and, a peeling step for peeling off the sheet from the front surface of the wafer.

Description

晶圓的加工方法Processing method of wafer

發明領域
本發明是有關於一種對在玻璃基板的上表面配設有金屬圖案的晶圓進行切割來分割成一個個的元件之晶圓的加工方法。FIELD OF THE INVENTION The present invention relates to a method for processing a wafer in which a metal pattern is arranged on an upper surface of a glass substrate, and the wafer is divided into individual elements.

發明背景
有複數個IC、LSI等元件被分割預定線分隔形成在正面之晶圓是藉由切割裝置而被分割成一個個的元件，且被利用於行動電話、個人電腦等電氣設備上。BACKGROUND OF THE INVENTION A plurality of ICs, LSIs, and other components are separated by a predetermined dividing line to form a wafer on the front side. The wafer is divided into individual components by a dicing device, and is used in electrical equipment such as mobile phones and personal computers.

切割裝置是由保持機構、切割機構、及進給機構所構成，能夠高精度地切割晶圓，前述保持機構會保持晶圓，前述切割機構會一邊對該保持機構所保持的晶圓供給切割水，一邊以旋轉的切割刀片來切割分割預定線，前述進給機構會對該保持機構與該切割機構進行加工進給(例如，參照專利文獻1)。
先前技術文獻
專利文獻The dicing device is composed of a holding mechanism, a dicing mechanism, and a feeding mechanism, and can cut a wafer with high accuracy. The holding mechanism holds the wafer, and the cutting mechanism supplies cutting water to the wafer held by the holding mechanism. While cutting a predetermined dividing line with a rotating cutting blade, the aforementioned feeding mechanism feeds the holding mechanism and the cutting mechanism (for example, refer to Patent Document 1).
Prior art literature patent literature

專利文獻1：日本專利特開平07-045556號公報Patent Document 1: Japanese Patent Laid-Open No. 07-045556

發明概要
發明欲解決之課題
已經嘗試藉由專利文獻1所記載之以往的切割裝置來切割晶圓，前述晶圓是有複數個藉由沉積等而由金屬圖案所構成的元件被分割預定線分隔形成在玻璃基板的上表面之晶圓。但是，在專利文獻1所記載之以往的切割裝置中，由於是朝向對晶圓切入切割刀片的位置強力地噴射切割水來實施切割，因此會發生沉積於玻璃基板的金屬圖案剝離、或金屬圖案的一部分損傷之問題。SUMMARY OF THE INVENTION The problem to be solved by the invention has been to try to cut a wafer by a conventional dicing device described in Patent Document 1. The wafer has a plurality of elements separated by a predetermined pattern and separated by a predetermined pattern. A wafer formed on the upper surface of a glass substrate. However, in the conventional dicing apparatus described in Patent Document 1, the dicing is performed by spraying the cutting water strongly toward the position where the dicing blade is cut into the wafer, so that the metal pattern deposited on the glass substrate is peeled off or the metal pattern is peeled off. Part of the problem of damage.

又，為了應對上述問題，也可考慮不供給切割水，而是實施例如一邊供給冷卻空氣一邊切割之所謂的乾切(Dry cut)。但是，已知若不對玻璃基板的切割部位供給切割水就要切割，就無法得到供給切割水時所能得到的化學機械效果(藉由供給水，將構成玻璃的氧與矽的結合弱化之效果)，切割溝的兩側會破損而使元件的品質明顯地降低。In order to cope with the above-mentioned problems, it is also conceivable that instead of supplying cutting water, for example, a so-called dry cut is performed in which cutting is performed while supplying cooling air. However, it is known that if the cutting water is not supplied to the cutting portion of the glass substrate, the chemical mechanical effect obtained when the cutting water is supplied cannot be obtained (the effect of weakening the bond between oxygen and silicon constituting the glass by supplying water). ), Both sides of the cutting groove will be damaged and the quality of the component will be significantly reduced.

本發明是有鑒於上述事實所完成的發明，其主要技術課題在於提供一種晶圓的加工方法，可以不使元件的品質降低來切割晶圓，前述晶圓是在玻璃基板的上表面形成有複數個包含金屬圖案的元件之晶圓，前述金屬圖案是藉由沉積等所形成。
用以解決課題之手段The present invention is an invention completed in view of the above-mentioned facts. The main technical problem of the present invention is to provide a method for processing a wafer, which can be used to cut a wafer without reducing the quality of the components. A wafer containing a metal pattern, the aforementioned metal pattern is formed by deposition or the like.
Means to solve the problem

為了解決上述主要技術課題，根據本發明，提供一種晶圓的加工方法，是將晶圓分割成一個個的元件之晶圓的加工方法，前述晶圓是在玻璃基板的上表面藉由複數條分割預定線來分隔複數個配設有金屬圖案的元件之晶圓，前述晶圓的加工方法是至少由下述之步驟所構成：片材壓接步驟，將聚烯烴系或聚酯系的片材鋪設於晶圓的正面並加熱，以將該片材熱壓接於晶圓的正面；晶圓支撐步驟，以切割膠帶來黏貼晶圓的背面，並且將環狀的框架黏貼於該切割膠帶，前述環狀的框架具有收容晶圓的開口；分割步驟，一邊供給切割水一邊使在外周具備環狀的切割刃之切割刀片旋轉，而沿著晶圓的分割預定線和該片材一起切割，以將該晶圓分割成一個個的元件；及剝離步驟，從晶圓的正面剝離該片材。In order to solve the above-mentioned main technical problems, according to the present invention, a wafer processing method is provided, which is a wafer processing method of dividing a wafer into individual elements. The wafer is formed by a plurality of strips on an upper surface of a glass substrate. A predetermined line is divided to separate a plurality of wafers provided with a metal pattern element. The processing method of the wafer is composed of at least the following steps: a sheet pressing step, and a polyolefin-based or polyester-based sheet The material is laid on the front side of the wafer and heated to thermally crimp the sheet to the front side of the wafer. In the wafer support step, a dicing tape is used to adhere the back side of the wafer, and a ring-shaped frame is attached to the dicing tape The aforementioned ring-shaped frame has an opening for accommodating the wafer; in the dividing step, the cutting blade having a ring-shaped cutting edge is rotated while supplying cutting water, and cut along with the sheet along a predetermined dividing line of the wafer To separate the wafer into individual elements; and a peeling step to peel the sheet from the front side of the wafer.

較理想的是，在該晶圓支撐步驟中配設環形構件，形成以水覆蓋晶圓的正面用的水池，前述環形構件會形成圍繞晶圓之環狀的側壁，在該分割步驟中，將切割水充滿該水池並使晶圓沒入於水中。Ideally, a ring-shaped member is provided in the wafer supporting step to form a pool for covering the front side of the wafer with water. The ring-shaped member will form a ring-shaped side wall surrounding the wafer. The dicing water fills the pool and immerses the wafer in the water.

選擇該聚烯烴系的片材之情況下，可以選自於聚乙烯片材、聚丙烯片材、聚苯乙烯片材之任一者。較理想的是，在該片材壓接步驟中，選擇了該聚乙烯片材的情況之加熱溫度為120~140℃，選擇了該聚丙烯片材的情況之加熱溫度為160~180℃，選擇了該聚苯乙烯片材的情況之加熱溫度是設為220~240℃。又，選擇該聚酯系的片材之情況下，可以選自於聚對苯二甲酸乙二酯片材、聚萘二甲酸乙二酯片材之任一者。較理想的是，在該片材壓接步驟中，選擇了該聚對苯二甲酸乙二酯片材的情況之加熱溫度為250~270℃，選擇了該聚萘二甲酸乙二酯片材的情況之加熱溫度是設為160~180℃。
發明效果When the polyolefin-based sheet is selected, it may be selected from any of a polyethylene sheet, a polypropylene sheet, and a polystyrene sheet. Ideally, in the sheet crimping step, the heating temperature in the case where the polyethylene sheet is selected is 120 to 140 ° C, and the heating temperature in the case where the polypropylene sheet is selected is 160 to 180 ° C. When this polystyrene sheet is selected, the heating temperature is set to 220 to 240 ° C. When the polyester-based sheet is selected, it may be selected from any one of a polyethylene terephthalate sheet and a polyethylene naphthalate sheet. Ideally, in the sheet crimping step, the heating temperature in the case where the polyethylene terephthalate sheet is selected is 250 ~ 270 ° C, and the polyethylene naphthalate sheet is selected. In this case, the heating temperature is set to 160 to 180 ° C.
Invention effect

本發明之晶圓的加工方法是至少由下述之步驟所構成：片材壓接步驟，將聚烯烴系或聚酯系的片材鋪設於晶圓的正面並加熱，以將該片材熱壓接於晶圓的正面；晶圓支撐步驟，以切割膠帶來黏貼晶圓的背面，並且將環狀的框架黏貼於該切割膠帶，前述環狀的框架具有收容晶圓的開口；分割步驟，一邊供給切割水一邊使在外周具備環狀的切割刃之切割刀片旋轉，而沿著晶圓的分割預定線和該片材一起切割，以將該晶圓分割成一個個的元件；及剝離步驟，從晶圓的正面剝離該片材，藉此，即使供給切割水，鋪設於玻璃基板的金屬圖案仍不會剝離或破損，而可以藉由化學機械效果來順利地分割晶圓。又，片材不具有由膠劑等所構成的黏著層，而是藉由熱壓接來配設於晶圓上，因此從元件剝離片材時，也不會使金屬圖案破損，並且不會使元件的品質降低。The method for processing a wafer of the present invention is composed of at least the following steps: a sheet pressure bonding step, laying a polyolefin-based or polyester-based sheet on the front surface of the wafer and heating to heat the sheet Crimping on the front side of the wafer; in the wafer supporting step, a dicing tape is used to stick the back side of the wafer, and a ring-shaped frame is attached to the dicing tape, the ring-shaped frame has an opening for accommodating the wafer; While cutting water is being supplied, a cutting blade having a circular cutting edge on the outer periphery is rotated, and cutting is performed along with the sheet along a predetermined division line of the wafer to divide the wafer into individual elements; and a peeling step; By peeling the sheet from the front side of the wafer, even if the cutting water is supplied, the metal pattern laid on the glass substrate will not be peeled or broken, and the wafer can be smoothly divided by the chemical mechanical effect. In addition, the sheet does not have an adhesive layer composed of an adhesive or the like, but is disposed on the wafer by thermal compression bonding. Therefore, the metal pattern is not damaged when the sheet is peeled from the element, and the metal pattern is not damaged. Reduce the quality of components.

用以實施發明之形態
以下，針對本發明之實施形態之晶圓的加工方法，一邊參照附加圖式一邊詳細地進行說明。Embodiments for Carrying Out the Invention Hereinafter, a wafer processing method according to an embodiment of the present invention will be described in detail with reference to the attached drawings.

在實施本實施形態之晶圓的加工方法時，首先，如圖1(a)所示，準備在本實施形態中成為被加工物的晶圓10。此晶圓10具備圓盤形狀的玻璃基板，具有3mm左右的厚度，該玻璃基板的上表面是藉由複數條分割預定線14來分隔，且在該分隔的各區域各自形成有包含金屬圖案的元件12，前述金屬圖案是藉由濺鍍或真空沉積之薄膜法等所形成。When the wafer processing method according to this embodiment is implemented, first, as shown in FIG. 1 (a), a wafer 10 to be processed in this embodiment is prepared. This wafer 10 includes a disc-shaped glass substrate having a thickness of about 3 mm. The upper surface of the glass substrate is divided by a plurality of predetermined division lines 14. Each of the divided regions is formed with a metal pattern. In the element 12, the aforementioned metal pattern is formed by a thin film method such as sputtering or vacuum deposition.

(片材壓接步驟)
準備了上述之晶圓10後，即實施片材壓接步驟。更具體而言，首先，如圖1(a)所示，準備實施片材壓接步驟用的工作夾台(chuck table)20。工作夾台20是由圓盤形狀的吸附夾頭20a與圓形框部20b所構成，前述吸附夾頭20a是由具有通氣性之多孔質的多孔陶瓷所構成，前述圓形框部20b是圍繞吸附夾頭20a的外周。工作夾台20是連接於未圖示的吸引機構，以吸引保持吸附夾頭20a的上表面(保持面)所載置的晶圓10。(Sheet crimping step)
After the wafer 10 is prepared, a sheet compression bonding step is performed. More specifically, first, as shown in FIG. 1 (a), a chuck table 20 for performing a sheet crimping step is prepared. The work chuck 20 is composed of a disk-shaped suction chuck 20a and a circular frame portion 20b. The suction chuck 20a is composed of a porous porous ceramic having air permeability, and the circular frame portion 20b is surrounded by The outer periphery of the chuck 20a is sucked. The work chuck 20 is connected to a suction mechanism (not shown) to suck and hold the wafer 10 placed on the upper surface (holding surface) of the suction chuck 20 a.

準備了晶圓10與工作夾台20後，如圖所示，相對於吸附夾頭20a的保持面，將晶圓10的背面10b側朝下，而載置於吸附夾頭20a的中心。將晶圓10載置於吸附夾頭20a後，如圖1(b)所示，在晶圓10的正面10a側上，載置以20~100μm的厚度所形成之圓形的聚烯烴系片材，例如聚乙烯(PE)片材30。如從圖1(b)所理解，吸附夾頭20a的直徑是設定成比晶圓10的直徑略大，藉由將晶圓10載置於吸附夾頭20a的中心，即可使包圍晶圓10的外周之吸附夾頭20a露出。此外，聚乙烯片材30是以比吸附夾頭20a的直徑更大的直徑來形成，較理想的是，以比工作夾台20的圓形框部20b的外徑稍小的直徑來形成。藉此，吸附夾頭20a即受到晶圓10及聚乙烯片材30所覆蓋。另外，在聚乙烯片材30之載置於晶圓10的載置面側並未形成有膠劑等之黏著層。After the wafer 10 and the work chuck 20 are prepared, as shown in the figure, the back surface 10b side of the wafer 10 is faced downward with respect to the holding surface of the suction chuck 20a, and placed on the center of the suction chuck 20a. After the wafer 10 is placed on the suction chuck 20a, as shown in FIG. 1 (b), a circular polyolefin-based sheet formed with a thickness of 20 to 100 μm is placed on the front surface 10a side of the wafer 10 Material, such as a polyethylene (PE) sheet 30. As understood from FIG. 1 (b), the diameter of the suction chuck 20a is set to be slightly larger than the diameter of the wafer 10. By placing the wafer 10 at the center of the suction chuck 20a, the surrounding wafer can be made. The suction chuck 20a on the outer periphery of 10 is exposed. The polyethylene sheet 30 is formed with a diameter larger than the diameter of the suction chuck 20 a, and is preferably formed with a diameter slightly smaller than the outer diameter of the circular frame portion 20 b of the work clamp 20. Thereby, the adsorption chuck 20 a is covered with the wafer 10 and the polyethylene sheet 30. In addition, an adhesive layer or the like is not formed on the placement surface side of the polyethylene sheet 30 on the wafer 10.

將晶圓10及聚乙烯片材30載置於工作夾台20後，使包含吸引泵浦等之未圖示的吸引機構作動，使吸引力Vm作用於吸附夾頭20a，以吸引晶圓10及聚乙烯片材30。如上所述，由於是藉由晶圓10及聚乙烯片材30來覆蓋吸附夾頭20a的上表面(保持面)整面，因此吸引力Vm會作用於晶圓10及聚乙烯片材30整體，而將晶圓10與聚乙烯片材30吸引保持於吸附夾頭20a上，並且吸引晶圓10與聚乙烯片材30之間所殘存的空氣以使兩者密合。在晶圓10的正面10a上，藉由包含金屬圖案的複數個元件12而形成有微小的凹凸，藉由工作夾台20之未圖示的吸引機構來吸引保持，藉此即可成為聚乙烯片材30密合於晶圓10的正面10a的凹凸面之狀態。After the wafer 10 and the polyethylene sheet 30 are placed on the work chuck 20, a suction mechanism (not shown) including a suction pump is operated, and the suction force Vm acts on the suction chuck 20 a to suck the wafer 10. And a polyethylene sheet 30. As described above, since the entire upper surface (holding surface) of the adsorption chuck 20 a is covered by the wafer 10 and the polyethylene sheet 30, the attraction force Vm acts on the entire wafer 10 and the polyethylene sheet 30. The wafer 10 and the polyethylene sheet 30 are attracted and held on the suction chuck 20 a, and the air remaining between the wafer 10 and the polyethylene sheet 30 is attracted to make the two closely contact. On the front surface 10a of the wafer 10, minute irregularities are formed by a plurality of elements 12 including a metal pattern, and they are sucked and held by a suction mechanism (not shown) of the work clamp 20, thereby becoming polyethylene. The sheet 30 is in a state of being in close contact with the uneven surface of the front surface 10 a of the wafer 10.

藉由使吸引機構作動而設成將聚乙烯片材30密合於晶圓10的正面10a的凹凸面之狀態後，如圖2(a)所示，在工作夾台20的上方，將作為熱壓接機構的熱風吹送機構40定位，前述熱壓接機構是將聚乙烯片材30熱壓接於晶圓10的機構。熱風吹送機構40是構成為：在面對工作夾台20側的出口側(圖中下側)具備加熱部，並且在相反側(圖中上側)具備藉由馬達等所驅動的風扇部，前述加熱部具備恆溫器等之溫度調整機構，藉由驅動該加熱部及風扇部，即可朝向晶圓10吹送熱風W。藉由此熱風吹送機構40將熱風W吹送至聚乙烯片材30所覆蓋之晶圓10的正面10a側整體，而將聚乙烯片材30加熱至熔點附近的120~140℃，使聚乙烯片材30逐漸地軟化。像這樣藉由熱風吹送機構40來加熱，並且使藉由工作夾台20側之未圖示的吸引機構所作用的負壓與外部的壓力(大氣壓)之間的壓力差起作用，藉此即可將聚乙烯片材30熱壓接於晶圓10的正面10a，使晶圓10與聚乙烯片材30一體化，而完成片材壓接步驟。另外，將聚乙烯片材30加熱而與晶圓10熱壓接的熱壓接機構並不限定於圖2(a)所示的熱風吹送機構40，也可以選擇其他機構。一邊參照圖2(b)及圖2(c)，一邊針對其他熱壓接機構進行說明。The suction mechanism is actuated to set the polyethylene sheet 30 in a state of being closely adhered to the uneven surface of the front surface 10a of the wafer 10, and as shown in FIG. The hot air blowing mechanism 40 of the thermocompression bonding mechanism is positioned, and the aforementioned thermocompression bonding mechanism is a mechanism for thermocompression bonding the polyethylene sheet 30 to the wafer 10. The hot air blowing mechanism 40 is configured to include a heating section on the exit side (lower side in the figure) facing the work clamp 20 and a fan section driven by a motor or the like on the opposite side (upper side in the figure). The heating unit includes a temperature adjustment mechanism such as a thermostat. By driving the heating unit and the fan unit, hot air W can be blown toward the wafer 10. By this hot air blowing mechanism 40, hot air W is blown to the entire front surface 10a side of the wafer 10 covered by the polyethylene sheet 30, and the polyethylene sheet 30 is heated to 120 to 140 ° C near the melting point to make the polyethylene sheet The material 30 is gradually softened. In this way, heating is performed by the hot air blowing mechanism 40, and a pressure difference between the negative pressure applied by the suction mechanism (not shown) on the work table 20 side and the external pressure (atmospheric pressure) is made effective, thereby The polyethylene sheet 30 may be thermally compression-bonded to the front surface 10a of the wafer 10 to integrate the wafer 10 and the polyethylene sheet 30 to complete the sheet compression bonding step. The thermocompression bonding mechanism for heating the polyethylene sheet 30 and thermocompression bonding the wafer 10 is not limited to the hot air blowing mechanism 40 shown in FIG. 2 (a), and other mechanisms may be selected. 2 (b) and 2 (c), another thermocompression bonding mechanism will be described.

作為其他熱壓接機構，也可以取代上述之熱風吹送機構40，改選擇圖2(b)所示的紅外線照射機構50(僅顯示一部分)。紅外線照射機構50是藉由照射紅外線L來加熱照射對象的機構。選擇了紅外線照射機構50來作為熱壓接機構的情況下，如圖2(b)所示，和選擇了上述熱風吹送機構40的情況同樣地，在已吸引保持晶圓10及聚乙烯片材30的工作夾台20的上方，將加熱聚乙烯片材30用的紅外線照射機構50定位。將紅外線照射機構50定位於工作夾台20的上方後，藉由紅外線照射機構50對聚乙烯片材30所覆蓋之晶圓10整體照射紅外線L，而使聚乙烯片材30加熱至熔點附近的120~140℃。聚乙烯片材30是藉由受到加熱而逐漸地軟化，並且在聚乙烯片材30密合於晶圓10的正面10a側的狀態下受到熱壓接，使晶圓10與聚乙烯片材30一體化，而完成片材壓接步驟。As another thermocompression bonding mechanism, instead of the hot air blowing mechanism 40 described above, the infrared irradiation mechanism 50 (only a part of which is shown) shown in FIG. 2 (b) may be selected instead. The infrared irradiation mechanism 50 is a mechanism that heats an irradiation target by irradiating infrared rays L. When the infrared irradiation mechanism 50 is selected as the thermocompression bonding mechanism, as shown in FIG. 2 (b), the wafer 10 and the polyethylene sheet are attracted and held in the same manner as when the hot air blowing mechanism 40 is selected. Above the work table 20 of 30, an infrared irradiation mechanism 50 for heating the polyethylene sheet 30 is positioned. After the infrared irradiation mechanism 50 is positioned above the work table 20, the entire infrared radiation L is irradiated onto the wafer 10 covered by the polyethylene sheet 30 by the infrared irradiation mechanism 50, so that the polyethylene sheet 30 is heated to a temperature near the melting point. 120 ~ 140 ℃. The polyethylene sheet 30 is gradually softened by being heated, and is subjected to thermal compression bonding while the polyethylene sheet 30 is in close contact with the front surface 10a side of the wafer 10, so that the wafer 10 and the polyethylene sheet 30 Integration to complete the sheet crimping step.

此外，作為另一種熱壓接機構，也可以選擇圖2(c)所示的加熱輥機構60(僅顯示一部分)。更具體而言，在已吸引保持晶圓10及聚乙烯片材30的狀態的工作夾台20的上方，將加熱並按壓聚乙烯片材30用的加熱輥機構60定位。雖然省略詳細內容，但加熱輥機構60具備內置未圖示的加熱器之加熱輥62、以及使加熱輥62旋轉用的旋轉軸64，在加熱輥62的表面上施加有氟樹脂加工。將加熱輥機構60定位於工作夾台20的上方後，使內置於加熱輥62的加熱器作動，並按壓聚乙烯片材30所覆蓋之晶圓10的正面10a側整體，使加熱輥62一邊往箭頭R1所示的方向來旋轉，一邊往箭頭X方向來移動。內置於加熱輥62的未圖示加熱器是調整成會使聚乙烯片材30成為熔點附近的120~140℃。藉由此加熱及按壓，和藉由上述熱風吹送機構40、或紅外線照射機構50而一體化同樣地，可以在使聚乙烯片材30密合於藉由晶圓10的正面10a的元件12所形成之微小的凹凸面之狀態下進行熱壓接，使晶圓10與聚乙烯片材30一體化，而完成片材壓接步驟。另外，作為實施片材壓接步驟之又另一種熱壓接機構，也可以取代上述之加熱輥62，改採用具備加熱器之板狀的按壓構件，以按壓聚乙烯片材30而與晶圓10熱壓接。又，作為藉由上述之各熱壓接機構將聚乙烯片材30加熱時的溫度，雖然是設為聚乙烯片材30的熔點附近的溫度(120℃~140℃)，但是也可以設定成比此溫度更低些許的溫度，例如，從熔點附近到低50℃左右的溫度之溫度範圍。In addition, as another thermocompression bonding mechanism, a heating roller mechanism 60 (only a part of which is shown) shown in FIG. 2 (c) may be selected. More specifically, a heating roller mechanism 60 for heating and pressing the polyethylene sheet 30 is positioned above the work table 20 that has attracted and held the wafer 10 and the polyethylene sheet 30. Although the details are omitted, the heating roller mechanism 60 includes a heating roller 62 with a heater (not shown) and a rotating shaft 64 for rotating the heating roller 62. The surface of the heating roller 62 is processed with fluororesin. After positioning the heating roller mechanism 60 above the work chuck 20, the heater built in the heating roller 62 is operated, and the entire front surface 10a side of the wafer 10 covered by the polyethylene sheet 30 is pressed, so that the heating roller 62 is side Rotate in the direction shown by arrow R1, while moving in the direction of arrow X. The heater (not shown) incorporated in the heating roller 62 is adjusted so that the polyethylene sheet 30 becomes 120 to 140 ° C. near the melting point. By this heating and pressing, similar to the integration by the hot-air blowing mechanism 40 or the infrared irradiation mechanism 50 described above, the polyethylene sheet 30 can be closely adhered to the element 12 on the front surface 10 a of the wafer 10. Thermal compression bonding is performed in the state of the formed minute uneven surface, so that the wafer 10 and the polyethylene sheet 30 are integrated to complete the sheet compression bonding step. In addition, as another thermal compression bonding mechanism for performing the sheet compression bonding step, instead of the heating roller 62 described above, a plate-shaped pressing member having a heater may be used instead to press the polyethylene sheet 30 to communicate with the wafer. 10 thermocompression bonding. The temperature when the polyethylene sheet 30 is heated by each of the thermocompression bonding mechanisms is set to a temperature near the melting point of the polyethylene sheet 30 (120 ° C to 140 ° C), but it may be set to A temperature slightly lower than this temperature, for example, a temperature range from a temperature near the melting point to a temperature lower by about 50 ° C.

在本實施形態中，繼上述之片材壓接步驟之後，考量到後續步驟中所實施的分割步驟，會實施將聚乙烯片材30沿著晶圓10的外形形狀來切斷的切斷步驟。另外，雖然此切斷步驟並不一定要實施，但是實施此切斷步驟可使與聚乙烯片材30一體化的晶圓10變得較容易處理，對後述之分割步驟而言較為便利。以下，一邊參照圖3，一邊針對切斷步驟進行說明。In this embodiment, following the sheet crimping step described above, a cutting step of cutting the polyethylene sheet 30 along the outer shape of the wafer 10 is performed in consideration of the dividing step performed in the subsequent steps. . In addition, although this cutting step is not necessarily performed, the implementation of this cutting step makes the wafer 10 integrated with the polyethylene sheet 30 easier to handle, and is more convenient for the dividing step described later. Hereinafter, the cutting process will be described with reference to FIG. 3.

(切斷步驟)
如圖3所示，在已吸引保持晶圓10及聚乙烯片材30的工作夾台20上，將切斷機構70(僅顯示一部分)定位。更具體而言，切斷機構70具備：切斷聚乙烯片材30用的圓盤形狀的切割刀72、以及將切割刀72往箭頭R2所示的方向來旋轉驅動用的馬達74，並且將切割刀72的刀口定位成會成為晶圓10的外周位置。切割刀72被定位於晶圓10的外周位置後，將切割刀72切入進給至恰好為聚乙烯片材30的厚度，並且使工作夾台20往箭頭R3所示的方向來旋轉。藉此，即可沿著晶圓10的外周來切斷聚乙烯片材30，而可以將從晶圓10的外周露出的聚乙烯片材30的外周緣切斷並切離。藉由以上，即完成切斷步驟。(Cutting step)
As shown in FIG. 3, the cutting mechanism 70 (only a part of which is shown) is positioned on the work table 20 that has attracted and held the wafer 10 and the polyethylene sheet 30. More specifically, the cutting mechanism 70 includes a disc-shaped cutting blade 72 for cutting the polyethylene sheet 30, and a motor 74 for driving the cutting blade 72 to rotate in a direction indicated by an arrow R2. The edge of the dicing blade 72 is positioned so as to be the outer peripheral position of the wafer 10. After the dicing blade 72 is positioned at the outer peripheral position of the wafer 10, the dicing blade 72 is cut and fed to the thickness of the polyethylene sheet 30, and the work table 20 is rotated in a direction indicated by an arrow R3. Thereby, the polyethylene sheet 30 can be cut along the outer periphery of the wafer 10, and the outer peripheral edge of the polyethylene sheet 30 exposed from the outer periphery of the wafer 10 can be cut and separated. With the above, the cutting step is completed.

(晶圓支撐步驟)
完成上述之切斷步驟後，即實施晶圓支撐步驟。一邊參照圖4及圖5，一邊針對晶圓支撐步驟進行說明。在實施晶圓支撐步驟時，如圖4所示，準備環狀的框架F，前述環狀的框架F具有大小可收容晶圓10的開口Fa。準備了框架F後，將晶圓10的背面10b黏貼於切割膠帶T，並且將晶圓10定位於框架F的開口Fa之中央，並將框架F黏貼於切割膠帶T，以透過切割膠帶T由框架F來支撐晶圓10。(Wafer support step)
After the above-mentioned cutting step is completed, a wafer supporting step is performed. The wafer supporting steps will be described with reference to FIGS. 4 and 5. When the wafer supporting step is performed, as shown in FIG. 4, a ring-shaped frame F is prepared, and the ring-shaped frame F has an opening Fa sized to accommodate the wafer 10. After the frame F is prepared, the back surface 10b of the wafer 10 is adhered to the dicing tape T, and the wafer 10 is positioned at the center of the opening Fa of the frame F, and the frame F is adhered to the dicing tape T so that the dicing tape T is passed through. The frame F to support the wafer 10.

在本實施形態中，再如圖5所示，準備環形構件80來形成圍繞晶圓10之環狀的側壁。此環形構件80可以由例如海綿或胺甲酸乙酯等之具有柔軟性的發泡性樹脂構件所構成。如圖5所示，環形構件80是以比晶圓10更大的內徑所形成，並且在切割膠帶T上配設成圍繞晶圓10。切割膠帶T上所配設的環形構件80的厚度(高度)為了要變得比晶圓10的正面10a側所鋪設的聚乙烯片材30的正面高度更高，而設定成例如6mm左右的厚度。另外，此環形構件80也可以作成為比框架F的開口Fa稍大的直徑，而配設於框架F上。藉由以上，即完成晶圓支撐步驟。In this embodiment, as shown in FIG. 5, a ring-shaped member 80 is prepared to form a ring-shaped side wall surrounding the wafer 10. The ring member 80 may be made of a flexible foamable resin member such as sponge or urethane. As shown in FIG. 5, the ring-shaped member 80 is formed with a larger inner diameter than the wafer 10, and is arranged on the dicing tape T so as to surround the wafer 10. The thickness (height) of the ring member 80 provided on the dicing tape T is set to be, for example, a thickness of about 6 mm so as to be higher than the front height of the polyethylene sheet 30 laid on the front surface 10 a side of the wafer 10. . The ring member 80 may be arranged on the frame F with a diameter slightly larger than the opening Fa of the frame F. With the above, the wafer supporting step is completed.

晶圓支撐步驟完成後，接著，實施將晶圓10分割成一個個的元件12的分割步驟。一邊參照圖6，一邊針對分割步驟進行說明。After the wafer supporting step is completed, a dividing step of dividing the wafer 10 into individual elements 12 is performed. The division procedure will be described with reference to FIG. 6.

如圖6(a)所示，分割步驟是藉由例如具備有主軸單元91的切割裝置90(省略裝置整體的圖示)來執行。主軸單元91具備有保持切割刀片93的主軸殼體94，前述切割刀片93固定在旋轉主軸92的前端部。在主軸殼體94中，在鄰接於切割刀片93的位置上配設有切割水供給機構95，並且構成為可以將切割水WT朝向環形構件80的內側來供給。在本實施形態中，配設有圍繞晶圓10而形成環狀的側壁之環形構件80，且從上述之切割水供給機構95將切割水WT供給至環形構件80內側，藉此便如圖6(b)中作為將一部分放大的側面圖所示，在環形構件80內形成充滿切割水WT的水池。該水池的水深是設定成：在供給了切割水WT的情況下，熱壓接於晶圓10的聚乙烯片材30會完全地沒入於水中的深度。使高速旋轉的切割刀片93相對於切割裝置90的該水池內所支撐的晶圓10下降並切入，並且使晶圓10相對於切割刀片93往箭頭X所示的加工進給方向來移動，藉此便會沿著分割預定線14，以和聚乙烯片材30一起將晶圓10完全地分割的深度，來形成規定的溝寬(例如50μm)的分離溝100。藉由使晶圓10相對於切割刀片93來適當移動，即可沿著晶圓10的全部的分割預定線14來形成分離溝100，而分割成一個個的元件12。藉由以上，即完成分割步驟。As shown in FIG. 6 (a), the dividing step is performed by, for example, a cutting device 90 (omitted from the entire device) including a spindle unit 91. The spindle unit 91 includes a spindle housing 94 that holds a cutting blade 93 that is fixed to a front end portion of the rotating spindle 92. The spindle housing 94 is provided with a cutting water supply mechanism 95 at a position adjacent to the cutting blade 93, and is configured to be capable of supplying the cutting water WT toward the inside of the annular member 80. In this embodiment, an annular member 80 is formed to form an annular side wall that surrounds the wafer 10, and the cutting water WT is supplied from the above-mentioned cutting water supply mechanism 95 to the inside of the annular member 80. As shown in the enlarged side view in (b), a water tank filled with cutting water WT is formed in the ring member 80. The water depth of the pool is set to a depth where the polyethylene sheet 30 thermocompression bonded to the wafer 10 is completely submerged in the water when the cutting water WT is supplied. The cutting blade 93 rotating at a high speed is lowered and cut into the wafer 10 supported in the pool of the cutting device 90, and the wafer 10 is moved relative to the cutting blade 93 in the processing feed direction indicated by arrow X. Then, the separation groove 100 having a predetermined groove width (for example, 50 μm) is formed along the predetermined division line 14 to a depth where the wafer 10 is completely divided together with the polyethylene sheet 30. By appropriately moving the wafer 10 with respect to the dicing blade 93, the separation trenches 100 can be formed along all the planned division lines 14 of the wafer 10 and divided into individual elements 12. With the above, the division step is completed.

在上述分割步驟中，於正面10a側黏貼有聚乙烯片材30的晶圓10，是以在環形構件80內所形成的水池內完全地沒入於水中的狀態而受到切割刀片93切割。藉此，即能夠在可得到乾淨地切割玻璃基板用的化學機械效果之狀態下來切割，並且在由切割水供給機構95所供給之切割水的力道受到貯留於水池中的切割水WT抑制之狀態下來切割，因此即使藉由高速旋轉的切割刀片93來切割，仍然不會使聚乙烯片材30剝離而可以乾淨地分割晶圓10。此外，由於切割水供給機構95所供給的切割水WT的量是對伴隨於切割時的切割刀片93的旋轉而被掃出至環形構件80外的切割水WT進行補給的量，因此和不藉由環形構件80來形成水池，而是將切割水集中地供給至切割部位的情況之切割水的供給量相較之下，變得可以大幅地減少。又，由於環形構件80是以具有柔軟性的發泡性樹脂(例如，海綿、胺甲酸乙酯等)所構成，因此即使切割刀片93接觸到也不會發生切割刀片93的刀刃缺損等之問題，而較為便利。In the above-mentioned dividing step, the wafer 10 having the polyethylene sheet 30 adhered to the front surface 10 a side is cut by the cutting blade 93 in a state where the water pool formed in the annular member 80 is completely immersed in water. Thereby, it is possible to cut in a state where the chemical mechanical effect for cutting the glass substrate can be obtained cleanly, and in a state where the force of the cutting water supplied by the cutting water supply mechanism 95 is suppressed by the cutting water WT stored in the pool Down dicing, even if the cutting is performed by the cutting blade 93 rotating at a high speed, the polyethylene sheet 30 is not peeled off and the wafer 10 can be cleanly divided. In addition, since the amount of the cutting water WT supplied by the cutting water supply mechanism 95 is an amount that replenishes the cutting water WT that is swept out of the ring member 80 in accordance with the rotation of the cutting blade 93 during cutting, it does not borrow In the case where the pool is formed by the ring member 80 and the supply of the cutting water is concentrated to the cutting site, the supply amount of the cutting water can be greatly reduced compared to the case where the supply of the cutting water is large. In addition, since the ring-shaped member 80 is made of a flexible foaming resin (for example, sponge, urethane, etc.), even if the cutting blade 93 comes in contact with it, problems such as cutting edge failure of the cutting blade 93 will not occur. , And more convenient.

(片材剝離步驟)
如上所述，分割步驟完成後，接著，實施片材剝離步驟。一邊參照圖7，一邊針對從一個個的元件12的正面10a剝離聚乙烯片材30的片材剝離步驟進行說明。(Sheet peeling step)
As described above, after the dividing step is completed, the sheet peeling step is then performed. A sheet peeling step of peeling the polyethylene sheet 30 from the front surface 10 a of each of the elements 12 will be described with reference to FIG. 7.

在實施片材剝離步驟時，首先，如圖7(a)所示，將環形構件80從切割膠帶T上取下。從切割膠帶T上取下了環形構件80，並且藉由乾燥步驟等去除了水分後，如圖7(b)所示，在黏貼有聚乙烯片材30之晶圓10的上表面貼上寬度較大的黏著膠帶32，以從晶圓10的上表面剝離聚乙烯片材30。聚乙烯片材30在上述之分割步驟中，已和元件12一起被分割成小片，藉由使用如圖所示之寬度較大的黏著膠帶32，即可以一次地剝離。又，由於聚乙烯片材30並不具備由膠劑等所構成的黏著層，而是藉由熱壓接來鋪設於晶圓10的正面10a，因此即使從晶圓10的正面10a剝離聚乙烯片材30，仍然可以抑制金屬圖案剝離或破損而使元件12的品質降低之情形。另外，從晶圓10剝離聚乙烯片材30時，可以藉由對聚乙烯片材30施加些許的加熱或冷卻，而更容易進行剝離。When the sheet peeling step is performed, first, as shown in FIG. 7 (a), the ring-shaped member 80 is removed from the dicing tape T. After removing the ring-shaped member 80 from the dicing tape T and removing the moisture by a drying step or the like, as shown in FIG. 7 (b), a width is attached to the upper surface of the wafer 10 to which the polyethylene sheet 30 is adhered. The larger adhesive tape 32 is used to peel the polyethylene sheet 30 from the upper surface of the wafer 10. In the above-mentioned dividing step, the polyethylene sheet 30 has been divided into small pieces together with the element 12 and can be peeled off at one time by using an adhesive tape 32 having a larger width as shown in the figure. In addition, since the polyethylene sheet 30 does not include an adhesive layer made of an adhesive or the like, it is laid on the front surface 10a of the wafer 10 by thermocompression bonding. Therefore, even if the polyethylene is peeled from the front surface 10a of the wafer 10 The sheet 30 can still prevent the metal pattern from being peeled or broken, and the quality of the element 12 is reduced. In addition, when the polyethylene sheet 30 is peeled from the wafer 10, it can be more easily peeled by applying a little heat or cooling to the polyethylene sheet 30.

在上述之實施形態中，雖然作為在片材壓接步驟中熱壓接於晶圓10的正面10a之片材，是從聚烯烴系片材之中選擇了聚乙烯片材30，但是本發明並不限定於此，只要是不具備膠劑等之黏著層也可以藉由熱壓接來鋪設於晶圓10之片材，就可以選擇其他片材。例如，只要是聚烯烴系片材，就也可以選自於聚丙烯(PP)片材、聚苯乙烯(PS)片材之任一者。又，作為不具備膠劑等之黏著層也可以藉由熱壓接來鋪設於晶圓10之片材，也可以從聚酯系片材來選擇。作為取代本實施形態的聚乙烯片材30而可應用的聚酯系片材，也可以選自於例如聚對苯二甲酸乙二酯(PET)片材、聚萘二甲酸乙二酯(PEN)片材之任一者。In the above-mentioned embodiment, the polyethylene sheet 30 was selected from the polyolefin-based sheets as the sheet that was thermally compression-bonded to the front surface 10a of the wafer 10 in the sheet compression bonding step, but the present invention It is not limited to this, as long as it is an adhesive layer without an adhesive or the like, it can be laid on the wafer 10 by thermocompression bonding, and other sheets can be selected. For example, as long as it is a polyolefin-based sheet, it may be selected from any of a polypropylene (PP) sheet and a polystyrene (PS) sheet. Moreover, as an adhesive layer which does not have an adhesive agent or the like, it can be laid on the wafer 10 by thermocompression bonding, or it can be selected from a polyester-based sheet. The polyester-based sheet that can be applied instead of the polyethylene sheet 30 of the present embodiment may be selected from, for example, polyethylene terephthalate (PET) sheet, polyethylene naphthalate (PEN ) Any of the sheets.

在上述之實施形態中，雖然是將片材壓接步驟中的加熱溫度設定成聚乙烯片材30的熔點附近的120~140℃的範圍，但是本發明並不限定於此，較理想的是因應於熱壓接的片材之種類來設定加熱溫度。例如，選擇了聚丙烯片材來作為聚烯烴系片材的情況下，較理想的是將加熱溫度設定成熔點附近的160~180℃。又，選擇了聚苯乙烯片材來作為聚烯烴系片材的情況下，較理想的是將加熱溫度設定成熔點附近的220~240℃。此外，選擇了聚對苯二甲酸乙二酯片材來作為熱壓接的聚酯系片材的情況下，較理想的是將加熱溫度設定成熔點附近的250~270℃。又，選擇了聚萘二甲酸乙二酯片材來作為聚酯系片材的情況下，較理想的是將加熱溫度設定成熔點附近的220~240℃。此外，該加熱溫度並不限定於各熔點附近的溫度，也可以設定成比該熔點附近的溫度更低50℃左右的溫度範圍的溫度。In the above-mentioned embodiment, although the heating temperature in the sheet compression bonding step is set to a range of 120 to 140 ° C. near the melting point of the polyethylene sheet 30, the present invention is not limited to this, and it is preferable that The heating temperature is set in accordance with the type of the thermocompression-bonded sheet. For example, when a polypropylene sheet is selected as the polyolefin-based sheet, it is desirable to set the heating temperature to 160 to 180 ° C. near the melting point. When a polystyrene sheet is selected as the polyolefin-based sheet, it is preferable to set the heating temperature to 220 to 240 ° C. near the melting point. In addition, when a polyethylene terephthalate sheet is selected as the polyester sheet for thermocompression bonding, it is desirable to set the heating temperature to 250 to 270 ° C. near the melting point. When a polyethylene naphthalate sheet is selected as the polyester-based sheet, it is preferable to set the heating temperature to 220 to 240 ° C. near the melting point. The heating temperature is not limited to a temperature near each melting point, and may be set to a temperature in a temperature range of about 50 ° C lower than the temperature near the melting points.

10‧‧‧晶圓10‧‧‧ wafer

10a‧‧‧正面 10a‧‧‧front

10b‧‧‧背面 10b‧‧‧ back

12‧‧‧元件 12‧‧‧ Components

14‧‧‧分割預定線 14‧‧‧ divided scheduled line

20‧‧‧工作夾台 20‧‧‧Work clamp table

20a‧‧‧吸附夾頭 20a‧‧‧ Suction Chuck

20b‧‧‧圓形框部 20b‧‧‧round frame

30‧‧‧聚乙烯片材 30‧‧‧polyethylene sheet

32‧‧‧黏著膠帶 32‧‧‧ Adhesive tape

40‧‧‧熱風吹送機構 40‧‧‧Hot wind blowing mechanism

50‧‧‧紅外線照射機構 50‧‧‧ infrared irradiation mechanism

60‧‧‧加熱輥機構 60‧‧‧Heating roller mechanism

62‧‧‧加熱輥 62‧‧‧Heating roller

64‧‧‧旋轉軸 64‧‧‧rotation axis

70‧‧‧切斷機構 70‧‧‧ cut-off mechanism

72‧‧‧切割刀 72‧‧‧ cutting knife

74‧‧‧馬達 74‧‧‧ Motor

80‧‧‧環形構件 80‧‧‧ ring member

90‧‧‧切割裝置 90‧‧‧ cutting device

91‧‧‧主軸單元 91‧‧‧ Spindle Unit

92‧‧‧旋轉主軸 92‧‧‧rotating spindle

93‧‧‧切割刀片 93‧‧‧ cutting blade

94‧‧‧主軸殼體 94‧‧‧ spindle housing

95‧‧‧切割水供給機構 95‧‧‧ cutting water supply mechanism

100‧‧‧分離溝 100‧‧‧ separation trench

F‧‧‧框架 F‧‧‧Frame

Fa‧‧‧開口 Fa‧‧‧ opening

L‧‧‧紅外線 L‧‧‧ Infrared

T‧‧‧切割膠帶 T‧‧‧Cutting Tape

Vm‧‧‧吸引力 Vm‧‧‧ attractive

W‧‧‧熱風 W‧‧‧ hot air

WT‧‧‧切割水 WT‧‧‧Cutting Water

X、R1、R2、R3‧‧‧箭頭 X, R1, R2, R3‧‧‧ arrows

圖1是顯示在本實施形態的片材壓接步驟中，將晶圓與片材一體化的態樣之立體圖。FIG. 1 is a perspective view showing a state in which a wafer and a sheet are integrated in a sheet crimping step in this embodiment.

圖2是顯示在本實施形態的片材壓接步驟中，對片材進行熱壓接的態樣之立體圖。 FIG. 2 is a perspective view showing a state where a sheet is thermally pressure-bonded in the sheet pressure-bonding step of the embodiment.

圖3是顯示本實施形態的切斷步驟的實施態樣之立體圖。 FIG. 3 is a perspective view showing an embodiment of a cutting step in the present embodiment.

圖4是顯示在本實施形態的晶圓支撐步驟中，以框架來支撐晶圓的態樣之立體圖。 FIG. 4 is a perspective view showing a state in which a wafer is supported by a frame in the wafer supporting step in this embodiment.

圖5是顯示在本實施形態的晶圓支撐步驟中，配設環形構件來形成圍繞晶圓之側壁的態樣之立體圖。 FIG. 5 is a perspective view showing a state in which a ring-shaped member is arranged to form a side wall around a wafer in the wafer supporting step of the present embodiment.

圖6是顯示本實施形態的分割步驟的實施態樣之立體圖。 FIG. 6 is a perspective view showing an embodiment of a dividing step according to this embodiment.

圖7是顯示本實施形態的片材剝離步驟的實施態樣之立體圖。 FIG. 7 is a perspective view showing an embodiment of a sheet peeling step according to this embodiment.

Claims (6)

一種晶圓的加工方法，是將晶圓分割成一個個的元件之晶圓的加工方法，前述晶圓是在玻璃基板的上表面藉由複數條分割預定線來分隔複數個配設有金屬圖案的元件之晶圓，前述晶圓的加工方法是至少由下述之步驟所構成：片材壓接步驟，將聚烯烴系或聚酯系的片材鋪設於晶圓的正面並加熱，以將該片材熱壓接於晶圓的正面； 晶圓支撐步驟，以切割膠帶來黏貼晶圓的背面，並且將環狀的框架黏貼於該切割膠帶，前述環狀的框架具有收容晶圓的開口； 分割步驟，一邊供給切割水一邊使在外周具備環狀的切割刃之切割刀片旋轉，而沿著晶圓的分割預定線和該片材一起切割，以將該晶圓分割成一個個的元件；及 剝離步驟，從晶圓的正面剝離該片材。A wafer processing method is a wafer processing method in which a wafer is divided into individual elements. The aforementioned wafer is divided on a top surface of a glass substrate by a plurality of predetermined division lines to separate a plurality of metal patterns. The processing method of the aforementioned wafer is composed of at least the following steps: a sheet crimping step, laying a polyolefin-based or polyester-based sheet on the front surface of the wafer and heating it, The sheet is thermally crimped to the front side of the wafer; In the wafer supporting step, a dicing tape is used to adhere the back surface of the wafer, and an annular frame is adhered to the dicing tape, the aforementioned annular frame has an opening for accommodating the wafer; In the dividing step, while cutting water is supplied, a cutting blade having an annular cutting edge is rotated on the outer periphery, and the wafer is cut along the wafer along a predetermined division line of the wafer to divide the wafer into individual elements; and In the peeling step, the sheet is peeled from the front side of the wafer. 如請求項1之晶圓的加工方法，其在該晶圓支撐步驟中配設環形構件，形成以水覆蓋晶圓的正面用的水池，前述環形構件會形成圍繞晶圓之環狀的側壁， 在該分割步驟中，將切割水充滿該水池並使晶圓沒入於水中。For example, in the wafer processing method of claim 1, an annular member is provided in the wafer supporting step to form a pool for covering the front side of the wafer with water, and the aforementioned annular member forms an annular side wall surrounding the wafer. In this dividing step, the pool is filled with dicing water and the wafer is immersed in the water. 如請求項1之晶圓的加工方法，其中該聚烯烴系的片材是選自於聚乙烯片材、聚丙烯片材、聚苯乙烯片材之任一者。The method for processing a wafer according to claim 1, wherein the polyolefin-based sheet is any one selected from a polyethylene sheet, a polypropylene sheet, and a polystyrene sheet. 如請求項3之晶圓的加工方法，其中在該片材壓接步驟中，選擇了該聚乙烯片材的情況之加熱溫度為120~140℃，選擇了該聚丙烯片材的情況之加熱溫度為160~180℃，選擇了該聚苯乙烯片材的情況之加熱溫度為220~240℃。For example, the processing method of the wafer of claim 3, wherein in the sheet crimping step, the heating temperature in the case where the polyethylene sheet is selected is 120 to 140 ° C, and the heating in the case where the polypropylene sheet is selected The temperature is 160-180 ° C, and the heating temperature in the case where the polystyrene sheet is selected is 220-240 ° C. 如請求項1之晶圓的加工方法，其中該聚酯系的片材是選自於聚對苯二甲酸乙二酯片材、聚萘二甲酸乙二酯片材之任一者。The processing method of a wafer according to claim 1, wherein the polyester-based sheet is any one selected from a polyethylene terephthalate sheet and a polyethylene naphthalate sheet. 如請求項5之晶圓的加工方法，其中在該片材壓接步驟中，選擇了該聚對苯二甲酸乙二酯片材的情況之加熱溫度為250~270℃，選擇了該聚萘二甲酸乙二酯片材的情況之加熱溫度為160~180℃。For example, the processing method of the wafer of claim 5, wherein in the sheet crimping step, the heating temperature of the case where the polyethylene terephthalate sheet is selected is 250 ~ 270 ° C, and the polynaphthalene is selected. In the case of ethylene diformate, the heating temperature is 160 to 180 ° C.
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