JP7214364B2 - Wafer processing method - Google Patents

Wafer processing method Download PDF

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JP7214364B2
JP7214364B2 JP2018088225A JP2018088225A JP7214364B2 JP 7214364 B2 JP7214364 B2 JP 7214364B2 JP 2018088225 A JP2018088225 A JP 2018088225A JP 2018088225 A JP2018088225 A JP 2018088225A JP 7214364 B2 JP7214364 B2 JP 7214364B2
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wafer
sheet
cutting
polyethylene
heating temperature
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JP2019193959A (en
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巻子 大前
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Disco Corp
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    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
    • H01L2221/68386—Separation by peeling

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Dicing (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Description

本発明は、ガラス基板の上面に金属パターンが配設されたウエーハを切削して個々のデバイスに分割するウエーハの加工方法に関する。 TECHNICAL FIELD The present invention relates to a wafer processing method for cutting a wafer having a metal pattern on the upper surface of a glass substrate and dividing the wafer into individual devices.

ＩＣ、ＬＳＩ等の複数のデバイスが分割予定ラインによって区画され表面に形成されたウエーハは、ダイシング装置によって個々のデバイスに分割され携帯電話、パソコン等の電気機器に利用される。 A wafer in which a plurality of devices such as ICs and LSIs are partitioned by division lines and formed on the surface thereof is divided into individual devices by a dicing machine and used for electric equipment such as mobile phones and personal computers.

ダイシング装置は、ウエーハを保持する保持手段と、該保持手段に保持されたウエーハに切削水を供給しながら回転する切削ブレードで分割予定ラインを切削する切削手段と、該保持手段と該切削手段とを加工送りする送り手段と、から構成されていて、ウエーハを高精度に切削することができる（例えば、特許文献１を参照。）。 A dicing apparatus includes holding means for holding a wafer, cutting means for cutting a line to be divided by a cutting blade rotating while supplying cutting water to the wafer held by the holding means, holding means and cutting means. and a feeding means for processing and feeding the wafer, and can cut the wafer with high precision (see, for example, Patent Document 1).

特開平０７－０４５５５６号公報JP-A-07-045556

特許文献１に記載された従来のダイシング装置により、ガラス基板の上面に蒸着等により金属パターンからなる複数のデバイスが分割予定ラインによって区画されて形成されたウエーハを切削することが試みられている。しかし、特許文献１に記載された従来のダイシング装置では、ウエーハに対して切削ブレードを切り込む位置に向けて切削水を勢いよく噴射して切削を実施するため、ガラス基板に蒸着された金属パターンが剥離、又は金属パターンの一部が損傷してしまうという問題が生じた。 A conventional dicing apparatus described in Patent Document 1 attempts to cut a wafer in which a plurality of devices each having a metal pattern are formed by vapor deposition or the like on the upper surface of a glass substrate and are separated by dividing lines. However, in the conventional dicing apparatus described in Patent Document 1, cutting is performed by vigorously jetting cutting water toward the position where the cutting blade cuts into the wafer, so that the metal pattern deposited on the glass substrate is removed. Problems such as delamination or damage to a portion of the metal pattern arose.

また、上記問題に対処すべく、切削水を供給せずに、たとえば冷却エアーを供給しながら切削する、所謂ドライカットを実施することも考えられる。しかし、ガラス基板の切削部位に切削水を供給せずに切削しようとすると、切削水を供給した際に得られるケモメカニカル効果（水が供給されることで、ガラスを構成する酸素とシリコンの結びつきを弱める効果）が得られず、切削溝の両側が破損してデバイスの品質を著しく低下させることが判明した。 Moreover, in order to deal with the above problem, it is conceivable to carry out so-called dry cutting, in which cutting is performed while cooling air is supplied, for example, without supplying cutting water. However, when cutting is attempted without supplying cutting water to the cutting portion of the glass substrate, the chemo-mechanical effect obtained when supplying cutting water weakening effect) was not obtained, and both sides of the cutting groove were damaged, significantly degrading the quality of the device.

本発明は、上記事実に鑑みなされたものであり、その主たる技術課題は、ガラス基板の上面に蒸着等により形成された金属パターンを含む複数のデバイスが形成されたウエーハを、デバイスの品質を低下させることなく切削することができるウエーハの加工方法を提供することにある。 The present invention has been made in view of the above facts. To provide a processing method of a wafer which can be cut without causing any deformation.

上記主たる技術課題を解決するため、本発明によれば、ガラス基板の上面に金属パターンが配設された複数のデバイスが複数の分割予定ラインによって区画されたウエーハを個々のデバイスに分割するウエーハの加工方法であって、ポリオレフィン系又はポリエステル系の貼着面に粘着層を有しないシートをウエーハの表面に敷設して加熱することにより軟化し、該シートをウエーハの表面に直接熱圧着するシート圧着工程と、ウエーハの裏面をダイシングテープで貼着すると共にウエーハを収容する開口を有する環状のフレームを該ダイシングテープに貼着するウエーハ支持工程と、切削水を供給しながら環状の切り刃を外周に備えた切削ブレードを回転させウエーハの分割予定ラインに沿って該シートと共に切削して該ウエーハを個々のデバイスに分割する分割工程と、デバイスの表面から該シートを剥離するシート剥離工程と、から少なくとも構成されるウエーハの加工方法が提供される。 In order to solve the main technical problems described above, according to the present invention, a wafer having a plurality of devices having a metal pattern provided on the upper surface of a glass substrate partitioned by a plurality of division lines is divided into individual devices. A processing method in which a polyolefin-based or polyester-based sheet having no adhesive layer on the bonding surface is laid on the surface of a wafer, softened by heating, and then directly heat-pressed onto the surface of the wafer. a wafer supporting step of adhering the back surface of the wafer with a dicing tape and adhering an annular frame having an opening for accommodating the wafer to the dicing tape; At least from a dividing step of rotating the provided cutting blade and cutting the wafer along with the sheet along the dividing line of the wafer to divide the wafer into individual devices, and a sheet peeling step of peeling the sheet from the surface of the device A method for processing structured wafers is provided.

好ましくは、該ウエーハ支持工程において、ウエーハを囲繞する環状の側壁をなすリング部材を配設し、ウエーハの表面を水で覆うためのプールを形成し、該分割工程において、該プールに切削水を満たしウエーハを水没させるようにする。 Preferably, in the wafer supporting step, a ring member forming an annular side wall surrounding the wafer is provided to form a pool for covering the surface of the wafer with water, and in the dividing step, cutting water is supplied to the pool. Allow the filled wafer to be submerged.

該ポリオレフィン系のシートを選択する場合は、ポリエチレンシート、ポリプロピレンシート、ポリスチレンシートのいずれかから選択することができる。該シート圧着工程において、該ポリエチレンシートが選択された場合の加熱温度は１２０～１４０℃であり、該ポリプロピレンシートが選択された場合の加熱温度は１６０～１８０℃であり、該ポリスチレンシートの加熱温度は２２０～２４０℃とすることが好ましい。また、該ポリエステル系のシートを選択する場合は、ポリエチレンテレフタレートシート、ポリエチレンナフタレートシートのいずれかから選択することができる。該シート圧着工程において、該ポリエチレンテレフタレートシートが選択された場合の加熱温度は２５０～２７０℃であり、該ポリエチレンナフタレートシートが選択された場合の加熱温度は１６０～１８０℃とすることが好ましい。 When the polyolefin-based sheet is selected, it can be selected from polyethylene sheet, polypropylene sheet, and polystyrene sheet. In the sheet pressure bonding step, the heating temperature is 120 to 140 ° C. when the polyethylene sheet is selected, and the heating temperature is 160 to 180 ° C. when the polypropylene sheet is selected, and the heating temperature of the polystyrene sheet is preferably 220 to 240°C. When the polyester-based sheet is selected, it can be selected from either a polyethylene terephthalate sheet or a polyethylene naphthalate sheet. In the sheet pressing step, the heating temperature is preferably 250 to 270° C. when the polyethylene terephthalate sheet is selected, and the heating temperature is preferably 160 to 180° C. when the polyethylene naphthalate sheet is selected.

本発明のウエーハの加工方法は、ポリオレフィン系又はポリエステル系の貼着面に粘着層を有しないシートをウエーハの表面に敷設して加熱することにより軟化し、該シートをウエーハの表面に直接熱圧着するシート圧着工程と、ウエーハの裏面をダイシングテープで貼着すると共にウエーハを収容する開口を有する環状のフレームを該ダイシングテープに貼着するウエーハ支持工程と、切削水を供給しながら環状の切り刃を外周に備えた切削ブレードを回転させウエーハの分割予定ラインに沿って該シートと共に切削して該ウエーハを個々のデバイスに分割する分割工程と、デバイスの表面から該シートを剥離するシート剥離工程と、から少なくとも構成されることにより、切削水を供給しても、ガラス基板に敷設された金属パターンが剥離したり、破損したりすることなく、ケモメカニカル効果によって円滑にウエーハを分割することができる。また、シートは糊剤等による粘着層を持たず、熱圧着によってウエーハに配設されるため、デバイスからシートを剥離する際にも、金属パターンを破損したりすることがなく、デバイスの品質を低下させることがない。 In the wafer processing method of the present invention, a polyolefin-based or polyester-based sheet having no adhesive layer on the bonding surface is laid on the surface of the wafer and heated to soften it, and the sheet is directly thermocompression bonded to the surface of the wafer. a wafer support step of adhering the back surface of the wafer with a dicing tape and adhering an annular frame having an opening for accommodating the wafer to the dicing tape; and an annular cutting edge while supplying cutting water. a cutting blade provided on the outer circumference of the wafer and cutting the sheet along the wafer dividing line to divide the wafer into individual devices; and a sheet peeling process of peeling the sheet from the surface of the device. , so that even if cutting water is supplied, the metal pattern laid on the glass substrate does not peel off or break, and the wafer can be smoothly divided by the chemo-mechanical effect. . In addition, since the sheet does not have an adhesive layer such as glue and is attached to the wafer by thermocompression, the metal pattern is not damaged when the sheet is peeled off from the device, resulting in improved device quality. does not reduce

本実施形態のシート圧着工程において、ウエーハとシートとを一体化する態様を示す斜視図である。FIG. 4 is a perspective view showing a manner in which a wafer and a sheet are integrated in the sheet pressure bonding process of the present embodiment; 本実施形態のシート圧着工程において、シートを熱圧着する態様を示す斜視図である。FIG. 4 is a perspective view showing a mode of thermocompression bonding of sheets in the sheet compression bonding process of the present embodiment. 本実施形態の切断工程の実施態様を示す斜視図である。It is a perspective view which shows the implementation of the cutting process of this embodiment. 本実施形態のウエーハ支持工程において、ウエーハをフレームで支持する態様を示す斜視図である。FIG. 4 is a perspective view showing a manner in which a wafer is supported by a frame in a wafer supporting process of this embodiment; 本実施形態のウエーハ支持工程において、ウエーハを囲繞する側壁をなすリング部材を配設する態様を示す斜視図である。FIG. 4 is a perspective view showing a manner in which a ring member forming a side wall surrounding a wafer is arranged in the wafer supporting process of the present embodiment; 本実施形態の分割工程の実施態様を示す斜視図である。It is a perspective view which shows the implementation of the division|segmentation process of this embodiment. 本実施形態のシート剥離工程の実施態様を示す斜視図である。FIG. 4 is a perspective view showing an embodiment of a sheet peeling process of the present embodiment;

以下、本発明の実施形態に係るウエーハの加工方法について、添付図面を参照しながら詳細に説明する。 Hereinafter, a wafer processing method according to an embodiment of the present invention will be described in detail with reference to the accompanying drawings.

本実施形態のウエーハの加工方法を実施するに当たり、まず、図１（ａ）に示すように、本実施形態において被加工物となるウエーハ１０を用意する。このウエーハ１０は３ｍｍ程度の厚さを有する円盤形状のガラス基板を備え、該ガラス基板の上面が複数の分割予定ライン１４によって区画され、該区画された各領域のそれぞれに、スパッタリングや真空蒸着による薄膜法等により形成された金属パターンを含むデバイス１２が形成されている。 In carrying out the wafer processing method of the present embodiment, first, as shown in FIG. 1A, a wafer 10 to be a workpiece in the present embodiment is prepared. This wafer 10 has a disk-shaped glass substrate having a thickness of about 3 mm, the upper surface of the glass substrate is partitioned by a plurality of dividing lines 14, and each of the partitioned regions is coated by sputtering or vacuum deposition. A device 12 including a metal pattern formed by a thin film method or the like is formed.

（シート圧着工程）
上記したウエーハ１０を用意したならば、シート圧着工程を実施する。より具体的には、まず、図１（ａ）に示すように、シート圧着工程を実施するためのチャックテーブル２０を用意する。チャックテーブル２０は、通気性を有する多孔質のポーラスセラミックからなる円盤形状の吸着チャック２０ａと、吸着チャック２０ａの外周を囲繞する円形枠部２０ｂとからなる。チャックテーブル２０は、図示しない吸引手段に接続され、吸着チャック２０ａの上面（保持面）に載置されるウエーハ１０を吸引保持する。 (Sheet crimping process)
After the wafer 10 described above is prepared, a sheet pressing process is carried out. More specifically, first, as shown in FIG. 1(a), a chuck table 20 for carrying out the sheet pressing process is prepared. The chuck table 20 comprises a disk-shaped suction chuck 20a made of porous ceramic having air permeability, and a circular frame portion 20b surrounding the outer periphery of the suction chuck 20a. The chuck table 20 is connected to a suction means (not shown) and suction-holds the wafer 10 placed on the upper surface (holding surface) of the suction chuck 20a.

ウエーハ１０と、チャックテーブル２０とを用意したならば、図に示すように、吸着チャック２０ａの保持面に対して、ウエーハ１０の裏面１０ｂ側を下にして、吸着チャック２０ａの中心に載置する。吸着チャック２０ａにウエーハ１０を載置したならば、図１（ｂ）に示すように、ウエーハ１０の表面１０ａ側に、２０～１００μｍの厚みで形成された円形のポリオレフィン系シート、たとえば、ポリエチレン（ＰＥ）シート３０を載置する。図１（ｂ）から理解されるように、吸着チャック２０ａの直径は、ウエーハ１０の直径よりもやや大きく設定されており、ウエーハ１０が吸着チャック２０ａの中心に載置されることにより、ウエーハ１０の外周を囲む吸着チャック２０ａが露出する。さらに、ポリエチレンシート３０は、吸着チャック２０ａの直径よりも大きい直径で形成され、好ましくは、チャックテーブル２０の円形枠部２０ｂの外径よりも僅かに小さい直径で形成される。これにより、吸着チャック２０ａは、ウエーハ１０及びポリエチレンシート３０で覆われる。なお、ポリエチレンシート３０のウエーハ１０に載置される載置面側には糊剤等の粘着層は形成されていない。 After the wafer 10 and the chuck table 20 are prepared, as shown in the figure, the wafer 10 is placed in the center of the suction chuck 20a with the back surface 10b side of the wafer 10 facing down with respect to the holding surface of the suction chuck 20a. . After the wafer 10 is placed on the adsorption chuck 20a, as shown in FIG. 1(b), a circular polyolefin-based sheet, such as polyethylene (eg, polyethylene ( PE) The sheet 30 is placed. As understood from FIG. 1B, the diameter of the suction chuck 20a is set slightly larger than the diameter of the wafer 10, and the wafer 10 is placed at the center of the suction chuck 20a. is exposed. Furthermore, the polyethylene sheet 30 is formed with a diameter larger than the diameter of the adsorption chuck 20 a , preferably with a diameter slightly smaller than the outer diameter of the circular frame portion 20 b of the chuck table 20 . Thereby, the suction chuck 20 a is covered with the wafer 10 and the polyethylene sheet 30 . An adhesive layer such as a paste is not formed on the surface of the polyethylene sheet 30 on which the wafer 10 is to be placed.

チャックテーブル２０にウエーハ１０、及びポリエチレンシート３０を載置したならば、吸引ポンプ等を含む図示しない吸引手段を作動させて、吸引力Ｖｍを吸着チャック２０ａに作用させ、ウエーハ１０、及びポリエチレンシート３０を吸引する。上記したように、ウエーハ１０及びポリエチレンシート３０によって、吸着チャック２０ａの上面（保持面）全面が覆われているため、吸引力Ｖｍは、ウエーハ１０及びポリエチレンシート３０全体に作用し、ウエーハ１０とポリエチレンシート３０とを吸着チャック２０ａ上に吸引保持すると共に、ウエーハ１０とポリエチレンシート３０との間に残存していた空気を吸引して両者を密着させる。ウエーハ１０の表面１０ａには、金属パターンを含む複数のデバイス１２によって微小な凹凸が形成されており、チャックテーブル２０の図示しない吸引手段によって吸引保持されることにより、ウエーハ１０の表面１０ａの凹凸面にポリエチレンシート３０が密着した状態になる。 After the wafer 10 and the polyethylene sheet 30 are placed on the chuck table 20, a suction means (not shown) including a suction pump or the like is operated to apply a suction force Vm to the suction chuck 20a. aspirate. As described above, since the entire upper surface (holding surface) of the adsorption chuck 20a is covered with the wafer 10 and the polyethylene sheet 30, the suction force Vm acts on the wafer 10 and the polyethylene sheet 30 as a whole. The sheet 30 is held by suction on the suction chuck 20a, and the air remaining between the wafer 10 and the polyethylene sheet 30 is sucked to bring them into close contact with each other. The surface 10a of the wafer 10 has fine irregularities formed by a plurality of devices 12 including metal patterns. The polyethylene sheet 30 is brought into close contact with.

吸引手段を作動させることによりウエーハ１０の表面１０ａの凹凸面にポリエチレンシート３０を密着した状態にしたならば、図２（ａ）に示すように、チャックテーブル２０の上方に、ポリエチレンシート３０をウエーハ１０に熱圧着する熱圧着手段としての熱風吹付け手段４０を位置付ける。熱風吹付け手段４０は、チャックテーブル２０側と対面する出口側（図中下側）にサーモスタット等の温度調整手段を備えたヒータ部を備えると共に、反対側（図中上側）にモータ等により駆動されるファン部を備え、該ヒータ部、及びファン部を駆動することにより、ウエーハ１０に向けて熱風Ｗを吹き付けることが可能に構成されている。この熱風吹付け手段４０によってポリエチレンシート３０が覆うウエーハ１０の表面１０ａ側全体に熱風Ｗを吹き付け、ポリエチレンシート３０を融点近傍の１２０～１４０℃に加熱し、ポリエチレンシート３０が徐々に軟化する。このように熱風吹付け手段４０によって加熱すると共に、チャックテーブル２０側の図示しない吸引手段によって作用する負圧と、外部の圧力（大気圧）との圧力差を作用させることで、ウエーハ１０の表面１０ａにポリエチレンシート３０が熱圧着されて、ウエーハ１０とポリエチレンシート３０とが一体化し、シート圧着工程が完了する。なお、ポリエチレンシート３０を加熱してウエーハ１０と熱圧着する熱圧着手段は、図２（ａ）に示す熱風吹付け手段４０に限定されず、他の手段を選択することも可能である。図２（ｂ）、及び図２（ｃ）を参照しながら、他の熱圧着手段について説明する。 When the polyethylene sheet 30 is brought into close contact with the uneven surface 10a of the wafer 10 by operating the suction means, the polyethylene sheet 30 is placed above the chuck table 20 as shown in FIG. 2(a). A hot air blowing means 40 is positioned as a thermocompression bonding means for thermocompression bonding to 10 . The hot air blowing means 40 is provided with a heater section equipped with temperature control means such as a thermostat on the outlet side (lower side in the drawing) facing the chuck table 20 side, and is driven by a motor or the like on the opposite side (upper side in the drawing). A fan section is provided, and the hot air W can be blown toward the wafer 10 by driving the heater section and the fan section. The hot air blowing means 40 blows hot air W over the entire surface 10a side of the wafer 10 covered with the polyethylene sheet 30 to heat the polyethylene sheet 30 to 120 to 140° C. near the melting point, thereby softening the polyethylene sheet 30 gradually. In this way, the surface of the wafer 10 is heated by the hot air blowing means 40 and the pressure difference between the negative pressure acting by the suction means (not shown) on the side of the chuck table 20 and the external pressure (atmospheric pressure) is applied. A polyethylene sheet 30 is thermocompression bonded to 10a to integrate the wafer 10 and the polyethylene sheet 30, completing the sheet compression bonding process. The thermocompression bonding means for heating the polyethylene sheet 30 and thermally bonding it to the wafer 10 is not limited to the hot air blowing means 40 shown in FIG. 2(a), and other means can be selected. Another thermocompression bonding means will be described with reference to FIGS. 2(b) and 2(c).

他の熱圧着手段としては、上記した熱風吹付け手段４０に替えて、図２（ｂ）に示す赤外線照射手段５０（一部のみ示す。）が選択されてもよい。赤外線照射手段５０は、赤外線Ｌを照射することにより照射対象を加熱する手段である。熱圧着手段として赤外線照射手段５０を選択した場合は、図２（ｂ）に示すように、上記熱風吹付け手段４０を選択した場合と同様に、ウエーハ１０、及びポリエチレンシート３０を吸引保持したチャックテーブル２０の上方に、ポリエチレンシート３０を加熱するための赤外線照射手段５０を位置付ける。赤外線照射手段５０をチャックテーブル２０の上方に位置付けたならば、赤外線照射手段５０によってポリエチレンシート３０が覆うウエーハ１０全体に赤外線Ｌを照射し、ポリエチレンシート３０が融点近傍の１２０～１４０℃に加熱する。ポリエチレンシート３０は加熱されることにより徐々に軟化し、ウエーハ１０の表面１０ａ側にポリエチレンシート３０が密着した状態で熱圧着されて、ウエーハ１０とポリエチレンシート３０とが一体化し、シート圧着工程が完了する。 As another thermocompression bonding means, instead of the hot air blowing means 40 described above, an infrared irradiation means 50 (only a part of which is shown) shown in FIG. 2(b) may be selected. The infrared irradiation means 50 is means for heating an irradiation target by irradiating infrared rays L. As shown in FIG. When the infrared irradiation means 50 is selected as the thermocompression bonding means, as shown in FIG. 2B, the wafer 10 and the polyethylene sheet 30 are sucked and held in a chuck as in the case where the hot air blowing means 40 is selected. An infrared radiation means 50 for heating the polyethylene sheet 30 is positioned above the table 20 . When the infrared irradiation means 50 is positioned above the chuck table 20, the infrared irradiation means 50 irradiates the entire wafer 10 covered with the polyethylene sheet 30 with the infrared rays L, and the polyethylene sheet 30 is heated to 120 to 140° C. near the melting point. . The polyethylene sheet 30 is gradually softened by being heated, and is thermocompression bonded with the polyethylene sheet 30 in close contact with the front surface 10a of the wafer 10 to integrate the wafer 10 and the polyethylene sheet 30, completing the sheet compression bonding process. do.

さらに、別の熱圧着手段として、図２（ｃ）に示す加熱ローラ手段６０（一部のみ示す。）が選択されてもよい。より具体的には、ウエーハ１０及びポリエチレンシート３０を吸引保持した状態のチャックテーブル２０の上方に、ポリエチレンシート３０を加熱し押圧するための加熱ローラ手段６０を位置付ける。詳細は省略するが、加熱ローラ手段６０は、図示しないヒータを内蔵する加熱ローラ６２と、加熱ローラ６２を回転させるための回転軸６４とを備え、加熱ローラ６２の表面には、フッ素樹脂加工が施されている。加熱ローラ手段６０をチャックテーブル２０の上方に位置付けたならば、加熱ローラ６２に内蔵されたヒータを作動し、ポリエチレンシート３０が覆うウエーハ１０の表面１０ａ側全体を押圧して加熱ローラ６２を矢印Ｒ１で示す方向に回転させながら、矢印Ｘ方向に移動させる。加熱ローラ６２に内蔵された図示しないヒータは、ポリエチレンシート３０が融点近傍の１２０～１４０℃になるように調整される。この加熱、及び押圧により、上記熱風吹付け手段４０、又は赤外線照射手段５０によって一体化されるのと同様に、ウエーハ１０の表面１０ａのデバイス１２によって形成された微小な凹凸面にポリエチレンシート３０を密着させた状態で熱圧着することができ、ウエーハ１０とポリエチレンシート３０とが一体化し、シート圧着工程が完了する。なお、シート圧着工程を実施するさらに別の熱圧着手段として、上記した加熱ローラ６２に代えて、ヒータを備えた板状の押圧部材を採用し、ポリエチレンシート３０を押圧しウエーハ１０と熱圧着することもできる。また、上記した各熱圧着手段によってポリエチレンシート３０を加熱する際の温度として、ポリエチレンシート３０の融点近傍の温度（１２０℃～１４０℃）としたが、これよりも若干低い温度、たとえば、融点近傍から５０℃程度低い温度までの温度範囲で設定されてもよい。 Furthermore, as another thermocompression bonding means, a heating roller means 60 (only part of which is shown) shown in FIG. 2(c) may be selected. More specifically, a heating roller means 60 for heating and pressing the polyethylene sheet 30 is positioned above the chuck table 20 holding the wafer 10 and the polyethylene sheet 30 by suction. Although details are omitted, the heating roller means 60 includes a heating roller 62 containing a heater (not shown) and a rotating shaft 64 for rotating the heating roller 62. The surface of the heating roller 62 is treated with fluorine resin. It has been subjected. When the heating roller means 60 is positioned above the chuck table 20, the heater incorporated in the heating roller 62 is activated to press the entire front surface 10a side of the wafer 10 covered with the polyethylene sheet 30 so that the heating roller 62 is moved by the arrow R1. Move in the direction of the arrow X while rotating in the direction indicated by . A heater (not shown) incorporated in the heating roller 62 is adjusted so that the temperature of the polyethylene sheet 30 is 120 to 140° C. near the melting point. By this heating and pressing, the polyethylene sheet 30 is formed on the micro uneven surface formed by the device 12 on the surface 10a of the wafer 10 in the same manner as the hot air blowing means 40 or the infrared irradiation means 50. The wafer 10 and the polyethylene sheet 30 can be thermocompressed in a tightly adhered state, and the sheet compression bonding process is completed. As a further thermocompression bonding means for carrying out the sheet compression bonding process, a plate-shaped pressing member equipped with a heater is employed instead of the heating roller 62 described above, and the polyethylene sheet 30 is pressed and bonded to the wafer 10 by thermocompression. can also In addition, as the temperature for heating the polyethylene sheet 30 by each of the thermocompression bonding means described above, a temperature near the melting point of the polyethylene sheet 30 (120° C. to 140° C.) was used. to a temperature as low as 50°C.

本実施形態では、上記したシート圧着工程に続き、後工程で実施される分割工程に配慮して、ポリエチレンシート３０をウエーハ１０の外形形状に沿って切断する切断工程を実施する。なお、この切断工程は、必ずしも実施される必要はないが、この切断工程を実施した方がポリエチレンシート３０と一体化されたウエーハ１０を扱い易くなり、後述する分割工程にとって好都合である。以下に、図３を参照しながら切断工程について説明する。 In this embodiment, following the above-described sheet pressure bonding step, a cutting step is performed to cut the polyethylene sheet 30 along the outer shape of the wafer 10 in consideration of the dividing step performed in the post-process. Although this cutting process does not necessarily have to be performed, it is easier to handle the wafer 10 integrated with the polyethylene sheet 30 when this cutting process is performed, which is convenient for the dividing process described later. The cutting process will be described below with reference to FIG.

（切断工程）
図３に示すように、ウエーハ１０及びポリエチレンシート３０を吸引保持したチャックテーブル２０上に、切断手段７０（一部のみ示す。）を位置付ける。より具体的には、切断手段７０は、ポリエチレンシート３０を切断するための円盤形状のブレードカッター７２と、ブレードカッター７２を矢印Ｒ２で示す方向に回転駆動するためのモータ７４とを備え、ブレードカッター７２の刃先を、ウエーハ１０の外周位置になるように位置付ける。ブレードカッター７２がウエーハ１０の外周位置に位置付けられたならば、ブレードカッター７２をポリエチレンシート３０の厚みだけ切込み送りし、チャックテーブル２０を矢印Ｒ３で示す方向に回転させる。これにより、ポリエチレンシート３０が、ウエーハ１０の外周に沿って切断され、ウエーハ１０の外周からはみ出したポリエチレンシート３０の外周部を切断して切り離すことができる。以上により、切断工程が完了する。 (Cutting process)
As shown in FIG. 3, the cutting means 70 (only part of which is shown) is positioned on the chuck table 20 holding the wafer 10 and the polyethylene sheet 30 by suction. More specifically, the cutting means 70 includes a disk-shaped blade cutter 72 for cutting the polyethylene sheet 30, and a motor 74 for rotating the blade cutter 72 in the direction indicated by the arrow R2. The cutting edge of 72 is positioned so as to be the outer peripheral position of the wafer 10 . When the blade cutter 72 is positioned at the outer peripheral position of the wafer 10, the blade cutter 72 is fed by the thickness of the polyethylene sheet 30, and the chuck table 20 is rotated in the direction indicated by the arrow R3. As a result, the polyethylene sheet 30 is cut along the outer periphery of the wafer 10, and the outer peripheral portion of the polyethylene sheet 30 protruding from the outer periphery of the wafer 10 can be cut and separated. With the above, the cutting process is completed.

（ウエーハ支持工程）
上記した切断工程を完了したならば、ウエーハ支持工程を実施する。ウエーハ支持工程について、図４、及び図５を参照しながら説明する。ウエーハ支持工程を実施するに際し、図４に示すように、ウエーハ１０を収容することが可能な大きさの開口Ｆａを有する環状のフレームＦを用意する。フレームＦを用意したならば、ウエーハ１０の裏面１０ｂをダイシングテープＴに貼着すると共に、ウエーハ１０をフレームＦの開口Ｆａの中央に位置付けて、ダイシングテープＴにフレームＦを貼着し、ダイシングテープＴを介してウエーハ１０をフレームＦで支持する。 (Wafer support process)
After completing the cutting process described above, the wafer supporting process is performed. The wafer support process will be described with reference to FIGS. 4 and 5. FIG. As shown in FIG. 4, when performing the wafer supporting process, an annular frame F having an opening Fa large enough to accommodate the wafer 10 is prepared. After preparing the frame F, the rear surface 10b of the wafer 10 is attached to the dicing tape T, the wafer 10 is positioned in the center of the opening Fa of the frame F, the frame F is attached to the dicing tape T, and the dicing tape is attached. A wafer 10 is supported by a frame F via T.

本実施形態では、さらに、図５に示すように、ウエーハ１０を囲繞する環状の側壁をなすリング部材８０を用意する。このリング部材８０は、たとえば、スポンジやウレタン等の柔軟性のある発泡性の樹脂部材から構成することができる。図５に示すように、リング部材８０は、ウエーハ１０よりも大きな内径で形成され、ダイシングテープＴ上に、ウエーハ１０を囲繞するように配設される。ダイシングテープＴ上に配設されるリング部材８０の厚さ（高さ）は、ウエーハ１０の表面１０ａ側に敷設されたポリエチレンシート３０の表面高さよりも高くなるように、たとえば６ｍｍ程度の厚さで設定される。なお、このリング部材８０は、フレームＦの開口Ｆａよりも僅かに大きな径として、フレームＦ上に配設することもできる。以上により、ウエーハ支持工程が完了する。 Further, in this embodiment, as shown in FIG. 5, a ring member 80 forming an annular side wall surrounding the wafer 10 is prepared. The ring member 80 can be made of, for example, a flexible foamed resin member such as sponge or urethane. As shown in FIG. 5, the ring member 80 is formed with an inner diameter larger than that of the wafer 10 and arranged on the dicing tape T so as to surround the wafer 10 . The thickness (height) of the ring member 80 arranged on the dicing tape T is, for example, about 6 mm so as to be higher than the surface height of the polyethylene sheet 30 laid on the surface 10a side of the wafer 10. is set by The ring member 80 can also be arranged on the frame F with a slightly larger diameter than the opening Fa of the frame F. As shown in FIG. With the above, the wafer support process is completed.

ウエーハ支持工程が完了したならば、次いで、ウエーハ１０を個々のデバイス１２に分割する分割工程を実施する。図６を参照しながら、分割工程について説明する。 Once the wafer support process is completed, a division process is then performed to divide the wafer 10 into individual devices 12 . The division process will be described with reference to FIG.

図６（ａ）に示すように、分割工程は、たとえば、スピンドルユニット９１を備えた切削装置９０（装置全体の図示は省略する。）により実行される。スピンドルユニット９１は、回転スピンドル９２の先端部に固定された切削ブレード９３を保持するスピンドルハウジング９４を備えている。スピンドルハウジング９４には、切削ブレード９３に隣接する位置に切削水供給手段９５が配設されており、切削水ＷＴをリング部材８０の内側に向けて供給することが可能に構成されている。本実施形態では、ウエーハ１０を囲繞して環状の側壁をなすリング部材８０が配設されており、上記した切削水供給手段９５からリング部材８０内側に切削水ＷＴを供給することにより、図６（ｂ）に一部を拡大した側面図として示すように、リング部材８０内に切削水ＷＴを満たすプールを形成する。当該プールの水深は、切削水ＷＴが供給された場合にウエーハ１０に熱圧着されたポリエチレンシート３０が、完全に水没する深さになるように設定されている。高速回転させられる切削ブレード９３を、切削装置９０の該プール内にて支持されたウエーハ１０に対して下降させて切り込ませ、ウエーハ１０を切削ブレード９３に対して矢印Ｘで示す加工送り方向に移動させることで、分割予定ライン１４に沿ってポリエチレンシート３０と共にウエーハ１０を完全に分割する深さで、所定の溝幅（例えば、５０μｍ）の分離溝１００を形成する。ウエーハ１０を、切削ブレード９３に対して適宜移動させることで、ウエーハ１０の全ての分割予定ライン１４に沿って分離溝１００を形成し、個々のデバイス１２に分割する。以上により、分割工程が完了する。 As shown in FIG. 6(a), the dividing step is performed, for example, by a cutting device 90 (illustration of the entire device is omitted) provided with a spindle unit 91. As shown in FIG. The spindle unit 91 has a spindle housing 94 that holds a cutting blade 93 fixed to the tip of a rotary spindle 92 . A cutting water supply means 95 is arranged in the spindle housing 94 at a position adjacent to the cutting blade 93 so as to supply the cutting water WT toward the inner side of the ring member 80 . In this embodiment, a ring member 80 is provided to surround the wafer 10 and form an annular side wall. As shown in a partially enlarged side view in (b), a pool filled with cutting water WT is formed in the ring member 80 . The water depth of the pool is set so that the polyethylene sheet 30 thermocompressed to the wafer 10 is completely submerged when the cutting water WT is supplied. A cutting blade 93 rotated at a high speed is lowered to cut into the wafer 10 supported in the pool of the cutting device 90, and the wafer 10 is moved to the cutting blade 93 in the processing feed direction indicated by the arrow X. By moving it, a separation groove 100 having a predetermined groove width (eg, 50 μm) is formed at a depth that completely divides the wafer 10 together with the polyethylene sheet 30 along the dividing line 14 . By appropriately moving the wafer 10 with respect to the cutting blade 93 , the separation grooves 100 are formed along all the dividing lines 14 of the wafer 10 to divide the wafer 10 into individual devices 12 . With the above, the dividing step is completed.

上記分割工程では、表面１０ａ側にポリエチレンシート３０が貼着されたウエーハ１０が、リング部材８０内に形成されるプールに完全に水没した状態で切削ブレード９３によって切削される。これにより、ガラス基板を綺麗に切削するためのケモメカニカル効果が得られる状態で切削することができると共に、切削水供給手段９５から供給された切削水の勢いが、プールに貯留される切削水ＷＴによって抑えられた状態で切削するため、高速で回転する切削ブレード９３によって切削しても、ポリエチレンシート３０が剥離することなくウエーハ１０を綺麗に分割することができる。さらに、切削水供給手段９５によって供給される切削水ＷＴの量は、切削時の切削ブレード９３の回転に伴ってリング部材８０の外に掃き出された切削水ＷＴを補給するものであるから、リング部材８０によってプールを形成せずに、切削部位に切削水を集中して供給する場合の切削水の供給量に比べ、大きく削減することが可能になる。また、リング部材８０は、柔軟性のある発泡性の樹脂（たとえば、スポンジ、ウレタン等）で構成されていることから、仮に切削ブレード９３が触れても切削ブレード９３の刃が欠ける等の問題が生じることもなく、好都合である。 In the dividing step, the wafer 10 having the polyethylene sheet 30 adhered to the front surface 10a side is cut by the cutting blade 93 while being completely submerged in the pool formed in the ring member 80 . As a result, the glass substrate can be cut in a state in which a chemo-mechanical effect for cutting the glass substrate cleanly can be obtained, and the force of the cutting water supplied from the cutting water supply means 95 is applied to the cutting water WT stored in the pool. Therefore, even if the cutting blade 93 rotates at high speed, the polyethylene sheet 30 does not peel off and the wafer 10 can be neatly divided. Furthermore, the amount of cutting water WT supplied by the cutting water supply means 95 is to replenish the cutting water WT swept out of the ring member 80 as the cutting blade 93 rotates during cutting. It is possible to greatly reduce the supply amount of cutting water compared to the case where the cutting water is concentratedly supplied to the cutting portion without forming a pool with the ring member 80 . In addition, since the ring member 80 is made of a flexible foamed resin (for example, sponge, urethane, etc.), even if the cutting blade 93 touches the ring member 80, there is no problem such as chipping of the cutting blade 93. It does not occur, which is convenient.

（シート剥離工程）
上記したように、分割工程が完了したならば、次いで、シート剥離工程を実施する。図７を参照しながら、個々のデバイス１２の表面１０ａからポリエチレンシート３０を剥離するシート剥離工程について説明する。 (Sheet peeling process)
As described above, when the dividing process is completed, the sheet peeling process is then performed. A sheet peeling process for peeling the polyethylene sheet 30 from the surface 10a of each device 12 will be described with reference to FIG.

シート剥離工程を実施する際には、まず、図７（ａ）に示すように、リング部材８０をダイシングテープＴ上から取り除く。ダイシングテープＴ上からリング部材８０を取り除き、乾燥工程等により水分を除去したならば、図７（ｂ）に示すように、ポリエチレンシート３０が貼着されたウエーハ１０の上面に幅広の粘着テープ３２を貼り付け、ウエーハ１０の上面からポリエチレンシート３０を剥離する。ポリエチレンシート３０は、上記した分割工程において、デバイス１２と共に小片に分割されており、図に示すような幅広の粘着テープ３２を使用することで、一気に剥離させることができる。また、ポリエチレンシート３０は、糊剤等による粘着層を備えず、熱圧着によってウエーハ１０の表面１０ａに敷設されているものであるため、ポリエチレンシート３０をウエーハ１０の表面１０ａから剥離しても、金属パターンを剥離したり、破損したりしてデバイス１２の品質を低下させることが抑制される。なお、ポリエチレンシート３０をウエーハ１０から剥離する際に、ポリエチレンシート３０に対し若干の加熱、或いは冷却を加えることで、より剥離しやすくすることができる。 When performing the sheet peeling process, first, the ring member 80 is removed from the dicing tape T as shown in FIG. 7(a). After removing the ring member 80 from the dicing tape T and removing water by a drying process or the like, a wide adhesive tape 32 is formed on the upper surface of the wafer 10 to which the polyethylene sheet 30 is adhered, as shown in FIG. 7(b). , and peel off the polyethylene sheet 30 from the upper surface of the wafer 10 . The polyethylene sheet 30 is divided into small pieces together with the device 12 in the dividing step described above, and can be peeled off at once by using a wide adhesive tape 32 as shown in the figure. Moreover, since the polyethylene sheet 30 does not have an adhesive layer made of glue or the like and is laid on the surface 10a of the wafer 10 by thermocompression bonding, even if the polyethylene sheet 30 is peeled off from the surface 10a of the wafer 10, Degradation of the quality of the device 12 due to detachment or breakage of the metal pattern is suppressed. When the polyethylene sheet 30 is peeled off from the wafer 10, the polyethylene sheet 30 may be slightly heated or cooled to make the peeling easier.

上記した実施形態では、シート圧着工程においてウエーハ１０の表面１０ａに熱圧着するシートとして、ポリオレフィン系シートの中からポリエチレンシート３０を選択したが、本発明はこれに限定されず、糊剤等の粘着層を備えなくても熱圧着によってウエーハ１０に敷設することが可能なシートであれば、他のシートを選択することができる。例えば、ポリオレフィン系シートであれば、ポリプロピレン（ＰＰ）シート、ポリスチレン（ＰＳ）シートのいずれかから選択してもよい。また、糊剤等の粘着層を備えなくても熱圧着によってウエーハ１０に敷設することが可能なシートとしては、ポリエステル系シートから選択することもできる。本実施形態のポリエチレンシート３０に替えて適用可能なポリエステル系シートとしては、たとえば、ポリエチレンテレフタレート（ＰＥＴ）シート、ポリエチレンナフタレート（ＰＥＮ）シートのいずれかから選択してもよい。 In the above-described embodiment, the polyethylene sheet 30 was selected from among the polyolefin sheets as the sheet to be thermocompression-bonded to the surface 10a of the wafer 10 in the sheet compression bonding step, but the present invention is not limited to this. Other sheets can be selected as long as they can be laid on the wafer 10 by thermocompression bonding without a layer. For example, a polyolefin sheet may be selected from either a polypropylene (PP) sheet or a polystyrene (PS) sheet. Moreover, as a sheet that can be laid on the wafer 10 by thermocompression bonding without having an adhesive layer such as glue, a polyester sheet can be selected. As a polyester-based sheet applicable in place of the polyethylene sheet 30 of the present embodiment, for example, either a polyethylene terephthalate (PET) sheet or a polyethylene naphthalate (PEN) sheet may be selected.

上記した実施形態では、シート圧着工程における加熱温度をポリエチレンシート３０の融点近傍の１２０～１４０℃の範囲になるように設定したが、本発明はこれに限定されず、熱圧着されるシートの種類に応じて加熱温度を設定することが好ましい。例えば、ポリオレフィン系シートとしてポリプロピレンシートを選択した場合は、加熱温度を融点近傍の１６０～１８０℃に設定することが好ましい。また、ポリオレフィン系シートとしてポリスチレンシートを選択した場合は、加熱温度を融点近傍の２２０～２４０℃に設定することが好ましい。さらに、熱圧着されるポリエステル系シートとしてポリエチレンテレフタレートシートを選択した場合は、加熱温度を融点近傍の２５０～２７０℃に設定することが好ましい。また、ポリエステル系シートとしてポリエチレンナフタレートシートを選択した場合は、加熱温度を融点近傍の２２０～２４０℃に設定することが好ましい。さらに、該加熱温度は、各融点近傍の温度に限定されず、該融点近傍の温度よりも５０℃程度低い温度範囲の温度を設定してもよい。 In the above-described embodiment, the heating temperature in the sheet crimping process is set to be in the range of 120 to 140° C. near the melting point of the polyethylene sheet 30, but the present invention is not limited to this, and the types of sheets to be thermocompressed It is preferable to set the heating temperature according to. For example, when a polypropylene sheet is selected as the polyolefin sheet, it is preferable to set the heating temperature to 160 to 180° C. near the melting point. Further, when a polystyrene sheet is selected as the polyolefin sheet, it is preferable to set the heating temperature to 220 to 240° C. near the melting point. Furthermore, when a polyethylene terephthalate sheet is selected as the polyester sheet to be thermocompressed, it is preferable to set the heating temperature to 250 to 270° C. near the melting point. Further, when a polyethylene naphthalate sheet is selected as the polyester sheet, it is preferable to set the heating temperature to 220 to 240° C. near the melting point. Furthermore, the heating temperature is not limited to the temperature near each melting point, and may be set to a temperature range lower than the temperature near the melting point by about 50°C.

１０：ウエーハ
１２：デバイス
１４：分割予定ライン
２０：チャックテーブル
２０ａ：吸着チャック
２０ｂ：円形枠部
３０：ポリエチレンシート
４０：熱風吹付け手段
５０：赤外線照射手段
６０：加熱ローラ手段
６２：加熱ローラ
７０：切断手段
７２：ブレードカッター
８０：リング部材
９０：切削装置
９１：スピンドルユニット
９３：切削ブレード
１００：分離溝
Ｆ：フレーム
Ｔ：ダイシングテープ
ＷＴ：切削水 10: Wafer 12: Device 14: Scheduled division line 20: Chuck table 20a: Adsorption chuck 20b: Circular frame 30: Polyethylene sheet 40: Hot air blowing means 50: Infrared irradiation means 60: Heating roller means 62: Heating roller 70: Cutting means 72: blade cutter 80: ring member 90: cutting device 91: spindle unit 93: cutting blade 100: separation groove F: frame T: dicing tape WT: cutting water

Claims (6)

ガラス基板の上面に金属パターンが配設された複数のデバイスが複数の分割予定ラインによって区画されたウエーハを個々のデバイスに分割するウエーハの加工方法であって、
ポリオレフィン系又はポリエステル系の貼着面に粘着層を有しないシートをウエーハの表面に敷設して加熱することにより軟化し、該シートをウエーハの表面に直接熱圧着するシート圧着工程と、
ウエーハの裏面をダイシングテープで貼着すると共にウエーハを収容する開口を有する環状のフレームを該ダイシングテープに貼着するウエーハ支持工程と、
切削水を供給しながら環状の切り刃を外周に備えた切削ブレードを回転させウエーハの分割予定ラインに沿って該シートと共に切削して該ウエーハを個々のデバイスに分割する分割工程と、
デバイスの表面から該シートを剥離するシート剥離工程と、
から少なくとも構成されるウエーハの加工方法。 A wafer processing method for dividing a wafer in which a plurality of devices in which a metal pattern is arranged on the upper surface of a glass substrate are separated by a plurality of dividing lines into individual devices, comprising:
A sheet press-bonding step in which a polyolefin-based or polyester-based sheet having no adhesive layer on the sticking surface is laid on the surface of a wafer, softened by heating, and directly heat-pressed onto the surface of the wafer;
a wafer supporting step of adhering the back surface of the wafer with a dicing tape and adhering an annular frame having an opening for housing the wafer to the dicing tape;
a dividing step of rotating a cutting blade having an annular cutting edge on its outer periphery while supplying cutting water to cut the wafer together with the sheet along the dividing line of the wafer to divide the wafer into individual devices;
A sheet peeling step of peeling the sheet from the surface of the device;
A wafer processing method comprising at least: 該ウエーハ支持工程において、ウエーハを囲繞する環状の側壁をなすリング部材を配設し、ウエーハの表面を水で覆うためのプールを形成し、
該分割工程において、該プールに切削水を満たしウエーハを水没させる請求項１に記載のウエーハの加工方法。 In the wafer supporting step, a ring member forming an annular side wall surrounding the wafer is provided to form a pool for covering the surface of the wafer with water;
2. The method of processing a wafer according to claim 1, wherein in said dividing step, said pool is filled with cutting water and said wafer is submerged. 該ポリオレフィン系のシートは、ポリエチレンシート、ポリプロピレンシート、ポリスチレンシートのいずれかから選択される請求項１に記載のウエーハの加工方法。 2. The method of processing a wafer according to claim 1, wherein said polyolefin sheet is selected from polyethylene sheet, polypropylene sheet and polystyrene sheet. 該シート圧着工程において、該ポリエチレンシートが選択された場合の加熱温度は１２０～１４０℃であり、該ポリプロピレンシートが選択された場合の加熱温度は１６０～１８０℃であり、該ポリスチレンシートの加熱温度は２２０～２４０℃である請求項３に記載のウエーハの加工方法。 In the sheet pressure bonding step, the heating temperature is 120 to 140 ° C. when the polyethylene sheet is selected, and the heating temperature is 160 to 180 ° C. when the polypropylene sheet is selected, and the heating temperature of the polystyrene sheet is 220 to 240°C. 該ポリエステル系のシートは、ポリエチレンテレフタレートシート、ポリエチレンナフタレートシートのいずれかから選択される請求項１に記載のウエーハの加工方法。 2. The method of processing a wafer according to claim 1, wherein said polyester sheet is selected from either a polyethylene terephthalate sheet or a polyethylene naphthalate sheet. 該シート圧着工程において、該ポリエチレンテレフタレートシートが選択された場合の加熱温度は２５０～２７０℃であり、該ポリエチレンナフタレートシートが選択された場合の加熱温度は１６０～１８０℃である請求項５に記載のウエーハの加工方法。 In the sheet pressure bonding step, the heating temperature is 250 to 270° C. when the polyethylene terephthalate sheet is selected, and the heating temperature is 160 to 180° C. when the polyethylene naphthalate sheet is selected. A method of processing the described wafer.
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JP2010212310A (en) 2009-03-06 2010-09-24 Nitto Denko Corp Method of dicing element
JP2014197675A (en) 2013-03-07 2014-10-16 住友ベークライト株式会社 Adhesive film, adhesive film integrated with dicing sheet, adhesive film integrated with back grind tape, adhesive film integrated with back grind tape cum dicing sheet, laminate, cured product of laminate, semiconductor device, and method for manufacturing semiconductor device

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