JP7404109B2 - Integration method - Google Patents

Description

The present invention relates to an integration method for integrating a ring frame having an opening for accommodating a wafer in the center and a sheet arrangement area with a wafer positioned in the opening using a thermocompression sheet.

The wafer, on which multiple devices such as ICs and LSIs are divided by division lines and formed on the surface, is divided into individual device chips by a cutting device equipped with a rotatable cutting blade and a laser processing device, which can be used for mobile phones, personal computers, etc. Used in electrical equipment such as

In addition, before the wafer is carried into a cutting device or a laser processing device, the wafer is positioned in the opening of a ring frame that has an opening for accommodating the wafer, and a dicing tape having an adhesive layer is pasted from the back side. Integrated with ring frame.

The wafer integrated with the ring frame is then divided into individual device chips by cutting equipment and laser processing equipment, and the device chips are picked up from a dicing tape in a pick-up process and bonded to a wiring board, etc. (for example, Patent Document 1).

In the above-mentioned dicing tape, for example, a glue is laid on the top surface of a vinyl chloride sheet to form an adhesive layer, so when a wafer is cut with a cutting blade, the glue scatters together with the cutting water and the device chips are separated. There is a problem that it adheres to the surface and deteriorates the quality of the device. Furthermore, even when the wafer is divided by irradiating the wafer with a laser beam along the planned dividing line, there is a problem in that part of the adhesive layer adheres to the back side of the device chip due to the irradiation with the laser beam, reducing the quality of the device. .

Therefore, instead of using the commonly used dicing tape with an adhesive layer, the applicant has developed a method for dicing the wafer by integrating the wafer and ring frame with a thermocompression sheet that exhibits adhesive strength when heated. Alternatively, a technique has been proposed in which a wafer is divided into individual device chips by laser processing (see Patent Document 2).

Patent No. 3076179 JP 2019-201016 Publication

According to the technology described in Patent Document 2 mentioned above, although the problem caused by the conventional dicing tape having an adhesive layer is solved, the compatibility between the thermocompression bonding sheet and the ring frame is lower than that between the thermocompression bonding sheet and the wafer. As a result, a new problem has arisen in that the outer periphery of the thermocompression bonding sheet tends to peel off from the ring frame during the process of integrating the wafer and the ring frame and then transporting them to a processing device.

The present invention has been made in view of the above facts, and its main technical problem is that even when the ring frame and the wafer positioned in the opening of the ring frame are integrated using a thermocompression bonding sheet, the thermocompression bonding sheet An object of the present invention is to provide an integration method in which the outer periphery of the ring frame is not easily peeled off from the ring frame.

In order to solve the above-mentioned main technical problem, according to the present invention, a ring frame having an opening for accommodating a wafer in the center and a seat arrangement area and a wafer positioned in the opening are integrated by a thermocompression sheet. The method includes the steps of placing a ring frame on a table, positioning and placing the wafer in the opening of the ring frame, and laying a thermocompression bonding sheet between the wafer and the ring frame. a laying process, a thermocompression bonding process in which the thermocompression bonding sheet is heated and pressed to adhere the thermocompression bonding sheet to the wafer and the ring frame; a cutting step of cutting off the excess portion; an additional thermocompression bonding step of heating the outer periphery of the thermocompression bonding sheet to fit it into the ring frame so as to reduce the level difference between the cut outer circumference of the thermocompression bonding sheet and the ring frame; An integrated method is provided comprising:

Further, in order to solve the above-mentioned main technical problem, according to the present invention, a ring frame having an opening for accommodating a wafer in the center and a sheet arrangement area and a wafer positioned in the opening are bonded to a thermocompression sheet. This is an integration method that includes placing a ring frame on a table, positioning and placing a wafer in an opening of the ring frame, and placing the sheet between the wafer and the ring frame. a laying process of laying a thermocompression bonding sheet of a size corresponding to the area; a thermocompression bonding process of heating and pressing the thermocompression bonding sheet to adhere the thermocompression bonding sheet to the wafer and the ring frame; An integration method is provided that includes an additional thermocompression bonding step of heating the outer periphery of the thermocompression sheet to fit it into the ring frame so as to reduce the level difference between the outer periphery and the ring frame.

The thermocompression-bonded sheet is preferably a polyolefin sheet or a polyester sheet. The polyolefin sheet can be selected from a polyethylene sheet, a polypropylene sheet, or a polystyrene sheet, and the polyester sheet can be selected from a polyethylene terephthalate sheet or a polyethylene naphthalate sheet. Further, the heating temperature when the ring frame and the wafer are integrated by the thermocompression bonding sheet is 120°C to 140°C if a polyethylene sheet is selected as the thermocompression bonding sheet, and 120°C to 140°C if a polypropylene sheet is selected. is 160°C to 180°C, 220°C to 240°C if polystyrene sheet is selected, 250°C to 270°C if polyethylene terephthalate sheet is selected, 160°C to 180°C if polyethylene naphthalate is selected. It is preferable that

The wafer is preferably made of Si, GaN, GaAs, or glass.

The integration method of the present invention is an integration method in which a ring frame having an opening for accommodating a wafer in the center and a sheet arrangement area is integrated with a wafer positioned in the opening using a thermocompression sheet. a placing step of placing a ring frame on a table, and positioning and placing a wafer in an opening of the ring frame; a laying step of laying a thermocompression bonding sheet between the wafer and the ring frame; and a thermocompression bonding sheet. A thermocompression bonding process in which the thermocompression bonding sheet is attached to the wafer and the ring frame by heating and pressing, and a cutting process in which the excess portion is cut off so that the outer periphery of the thermocompression bonding sheet fits within the sheet placement area of the ring frame. and an additional thermocompression bonding step of heating the outer periphery of the thermocompression bonding sheet to fit it into the ring frame so as to reduce the level difference between the cut outer periphery of the thermocompression bonding sheet and the ring frame. This improves the fit between the thermocompression bonded sheet and the ring frame, and solves the problem of the outer periphery of the thermocompression bonding sheet easily peeling off from the ring frame.

Further, the integration method of the present invention is an integration method in which a ring frame having an opening for accommodating a wafer in the center and a sheet arrangement area is integrated with a wafer positioned in the opening using a thermocompression bonding sheet. The method includes a placing step of placing a ring frame on a table, positioning and placing a wafer in an opening of the ring frame, and placing the wafer and ring frame in a size corresponding to the sheet placement area. A laying process of laying a thermocompression bonding sheet, a thermocompression bonding process of heating and pressing the thermocompression bonding sheet to adhere the thermocompression bonding sheet to the wafer and the ring frame, and a step between the outer periphery of the thermocompression bonding sheet and the ring frame. an additional thermocompression bonding step of heating the outer periphery of the thermocompression bonding sheet so as to fit it into the ring frame, so that the thermocompression bonding sheet and the ring frame become familiar, and In addition to solving the problem of the outer periphery of the ring being easily peeled off from the ring frame, there is no process of cutting the thermocompression bonded sheet on the ring frame with a cutting blade of the cutting means, which eliminates the dust generated when cutting the thermocompression bonding sheet, Metal dust generated when the cutting blade touches the ring frame is not generated in a space (such as a clean room) where processing is performed, and the space can be prevented from being contaminated.

FIG. 3 is a perspective view showing a mode of carrying out a mounting process. FIG. 3 is a perspective view showing a mode of carrying out a laying process. FIG. 3 is a perspective view showing a mode of carrying out a thermocompression bonding process. FIG. 3 is a perspective view showing a mode of carrying out a cutting process. FIG. 7 is a perspective view showing another embodiment of the laying process. It is a perspective view showing other embodiments of a thermocompression bonding process. (a) Partially enlarged side view showing how the outer periphery of the thermocompression sheet is heated in the additional thermocompression bonding step, (b) After carrying out the step shown in (a), the outer periphery of the thermocompression bonding sheet is adapted to the ring frame. It is a partially enlarged side view showing an aspect. (a) A perspective view showing how a wafer is divided by a cutting device, and (b) a perspective view showing a wafer divided into individual device chips by carrying out the process shown in (a). FIG. 2 is a side view (partially sectional view) showing an embodiment of a pickup process.

DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, embodiments of an integration method based on the present invention will be described in detail with reference to the accompanying drawings.

When implementing the integration method of the present invention, as shown in FIG. 1, a wafer 10 as a workpiece, a ring frame 16, and a table 20 on which the integration method is implemented are prepared.

The wafer 10 is made of silicon (Si), for example, and a plurality of devices 12 are formed on the surface 10a, divided by dividing lines 14. A notch 10c indicating the crystal orientation of the wafer 10 is formed at a predetermined position on the outer periphery of the wafer 10. The ring frame 16 is an annular plate-like member, and has an opening 16a formed in the center with a size capable of accommodating the wafer 10. It has a seat arrangement area 16b surrounded by the outer periphery of the seat. On the outer periphery of the ring frame 16, a straight portion, a notch, etc., which function when the ring frame 16 is accommodated in a container (for example, a cassette), are formed. The table 20 includes a cylindrical frame member 22 and a suction surface 24 surrounded by the frame member 22. The suction surface 24 has a flat upper surface, is formed of a breathable member, and is connected to a suction means (not shown) through the inside of the frame member 22. The suction surface 24 is set to be larger than the outer diameter of the ring frame 16.

Once the wafer 10, ring frame 16, and table 20 have been prepared as described above, as shown in FIG. The wafer 10 is placed in the center of the opening 16a of the ring frame 16 (placing step). Note that when placing the wafer 10 on the table 20, the notch 10c is positioned in a predetermined direction with respect to the ring frame 16.

Next, a thermocompression bonding sheet 18A prepared in advance is laid so as to cover at least the wafer 10 and the ring frame 16 (laying step). The thermocompression-bonded sheet 18A in this embodiment is larger than the outer diameter of the ring frame 16, and its outer periphery is set to a size corresponding to the frame member 22 of the table 20.

The thermocompression bonding sheet 18A is selected from materials suitable for thermocompression bonding. A material suitable for thermocompression bonding is a material that softens and exhibits adhesive properties when heated to a predetermined temperature range. More specifically, it can be selected from polyolefin sheets and polyester sheets.

When selecting the thermocompression bonded sheet 18A from polyolefin sheets, it is preferable to select from polyethylene (PE) sheet, polypropylene (PP) sheet, and polystyrene (PS) sheet. Further, when selecting the thermocompression bonded sheet 18A from polyester sheets, it is preferable to select from either a polyethylene terephthalate (PET) sheet or a polyethylene naphthalate (PEN) sheet. In the embodiment described below, the explanation will be continued assuming that a polyethylene sheet is selected as the thermocompression bonding sheet 18A.

After carrying out the above-described mounting process, as shown in FIG. 3, a thermocompression bonding device 30 (only a portion of which is shown) is positioned above the table 20. The thermocompression bonding device 30 includes a heating roller 32 that is rotatably held in a direction indicated by an arrow R1 around an axis O in the longitudinal direction and movable in a direction indicated by an arrow R2 parallel to the suction surface 24 of the table 20. Be prepared. The surface of the heating roller 32 is coated with fluororesin (not shown) so that it does not adhere even if the thermocompression bonding sheet 18A exhibits adhesive force by being heated. An electric heater and a temperature sensor are built inside the heating roller 32 (not shown), and the surface of the heating roller 32 can be adjusted to a desired temperature by a separately prepared control device.

Once the heating roller 32 of the thermocompression bonding device 30 is positioned on the table 20, as shown in FIG. Rotate in the direction indicated by R1. At this time, a suction means (not shown) may be activated to apply negative pressure Vm through the frame member 22 to suction the wafer 10, ring frame 16, and thermocompression bonding sheet 18A to the suction surface 24. In this embodiment, the heating temperature when heating the thermocompression bonding sheet 18A by the heating roller 32 is set in the range of 120° C. to 140° C. This heating temperature is a temperature near the melting point of the polyethylene sheet that constitutes the thermocompression bonding sheet 18A in this embodiment, and is a temperature at which the thermocompression bonding sheet 18A does not melt excessively and is softened and exhibits adhesiveness. By doing so, the thermocompression bonding sheet 18A is thermocompression bonded to the back surface 10b of the wafer 10 and the sheet placement area 16b of the ring frame 16, and are integrated.

Once the thermocompression bonding process has been carried out as described above, a cutting process is carried out to remove the excess outer portion of the thermocompression bonding sheet 18A that protrudes from the sheet placement area 16b of the ring frame 16, as shown in FIG. This cutting process uses the cutting means 40 shown in the figure (only a portion is shown). The cutting means 40 includes a cutting unit 42, a rotary shaft 44 is supported by the cutting unit 42, and a disc-shaped cutter 46 is attached to the tip of the rotary shaft 44 so as to be rotatable in the direction shown by arrow R3. has been done.

To carry out the cutting process, the table 20 is positioned below the cutting means 40, and the excess portion of the thermocompression bonded sheet 18A, including the area protruding outward from the sheet placement area 16b of the ring frame 16, and the sheet placement area are removed. The cutter 46 is positioned at a cutting line S (indicated by a broken line) set as a boundary between the wafer 16b and the inner area including the area pasted on the wafer 10. Next, the cutter 46 is lowered from above to press and feed the thermocompression bonded sheet 18A, and the tip of the cutter 46 is brought into contact with the ring frame 16 to relatively rotate the table 20 in the direction shown by arrow R4. As a result, the cutter 46 rotates in the direction shown by the arrow R3, and a cutting groove 100 (shown by a solid line) is formed along the cutting line S. Once the cutting groove 100 has been formed along the sheet placement area 16b of the ring frame 16 in this manner, the excess portion is cut off from the thermocompression bonded sheet 18A and removed. Once the excess portion is removed, the suction means (not shown) that was acting on the table 20 is stopped (cutting step). As a result, the new outer periphery of the thermocompression bonded sheet 18A corresponding to the line S is formed so as to fit within the sheet placement area 16b of the ring frame 16.

In the embodiment described above, the thermocompression bonding sheet 18A is formed in a size that extends to the frame member 22 of the table 20, and the excess portion is removed by performing a cutting process, so that the outer periphery of the thermocompression bonding sheet 18A becomes a ring frame. Although it is formed so as to fit into the 16 seat arrangement areas 16b, the present invention is not limited thereto. For example, instead of the thermocompression bonding sheet 18A described above, a thermocompression bonding sheet 18B having a size corresponding to the sheet placement area 16b of the ring frame 16 is prepared in advance as shown in FIG. , the wafer 10 placed on the table 20 and the ring frame 16. Next, as shown in FIG. 6, a thermocompression bonding step is performed in which the thermocompression bonding sheet 18B is heated and pressed using the thermocompression bonding device 30 described above to adhere the thermocompression bonding sheet 18B to the wafer 10 and the ring frame 16. Implement. Note that the thermocompression bonding sheet 18B is formed of the same material as the thermocompression bonding sheet 18A, and differs only in the outer diameter dimension.

To explain more specifically the thermocompression bonding process using the thermocompression bonding sheet 18B, the heating roller 32 of the thermocompression bonding device 30 used in the thermocompression bonding process described above is positioned on the thermocompression bonding sheet 18B, as shown in FIG. The thermocompression bonding sheet 18B is heated and pressed by the heating roller 32, moved along the surface of the thermocompression bonding sheet 18B in the direction indicated by arrow R2, and the heating roller 32 is rotated in the direction indicated by arrow R1. . At this time, a suction means (not shown) may be activated to apply negative pressure Vm through the frame member 22 to suction the wafer 10, ring frame 16, and thermocompression bonding sheet 18B to the suction surface 24. The heating temperature when heating the thermocompression bonded sheet 18B by the heating roller 32 is set in the range of 120° C. to 140° C., as described above. By doing so, the thermocompression bonding sheet 18B is thermocompression bonded to the back surface 10b of the wafer 10 and the sheet placement area 16b of the ring frame 16, and are integrated. Note that since the thermocompression bonded sheet 18B is set in advance to a size corresponding to the sheet placement area 16b of the ring frame 16, there is no need to perform the above-described cutting process.

The state obtained by carrying out the cutting process described above based on FIG. 4 and the state obtained by the thermocompression bonding process carried out based on FIG. The ring frame 16 and the wafer 10 are in the same state in that they are formed so as to fit in the sheet arrangement area 16b of the frame 16, and the ring frame 16 and the wafer 10 are integrated via thermocompression sheets 18A and 18B. In this state, the thermocompression bonding sheets 18A, 18B and the wafer 10 are well bonded, but the thermocompression bonding sheets 18A, 18B and the ring frame 16 do not fit very well. In order to cope with this, in this embodiment, an additional thermocompression bonding process, which will be described below with reference to FIG. 7, is performed.

To explain the first embodiment of the additional thermocompression bonding process, first, as shown on the left side of FIG. The heating means 50 is positioned above the. The heating means 50 is, for example, a means for jetting hot air W downward from the tip of a blower 52. The temperature of the hot air W is set to 120° C. to 140° C., which is the melting point temperature of the polyethylene sheets constituting the thermocompression sheets 18A and 18B, or a temperature slightly higher than the melting point temperature range. While blowing hot air W from the blower 52, the chuck table 22 is relatively rotated to heat the entire outer periphery 19 of the thermocompression sheets 18A, 18B. By doing so, the end 19a of the outer periphery 19 becomes soft and almost melted, and the adhesive force to the ring frame 16 is once again exerted, and as shown by 19a' on the right side of FIG. 7(a), The step formed at the end 19a of the outer periphery 19 is reduced or eliminated, and the outer periphery 19 of the thermocompression sheets 18A, 18B can be adapted to the ring frame 16. Note that the manner in which the additional thermocompression bonding step is carried out is not limited to this, and may be carried out according to the second embodiment shown below, for example. More specifically, as shown in FIG. 7(b), a soldering iron 54 having an inclined surface 54a at the lower end and provided with heating means (not shown) inside is used. By heating the surface of the iron 54 to 120° C. to 140° C., which is the melting point temperature of the polyethylene sheet, and pressing the outer periphery 19 from above with the inclined surface 54a while rotating the table 20, the outer periphery of the thermocompression sheets 18A and 18B is heated. By reducing or eliminating the step formed between the ring frame 19 and the ring frame 16, the thermocompression sheets 18A and 18B can be made to fit into the ring frame 16, as shown at 19a' in the figure. With the above, the additional thermocompression bonding step is completed, and the integration method of this embodiment is also completed.

According to this embodiment, the outer periphery 19 of the thermocompression-bonded sheets 18A, 18b, which are easy to peel off, is heated again to reduce or eliminate the step formed between the thermocompression-bondable sheets 18A, 18b and the ring frame 16. 18B and the ring frame 16 become more compatible, and the thermocompression sheets 18A and 18B are likely to peel off from the ring frame 16 when the wafer 10 is transported to a subsequent process or during the next process. This problem is solved. Furthermore, as explained based on FIGS. 5 and 6, by carrying out the thermocompression bonding process using the thermocompression bonding sheet 18B that has been processed in advance to a size corresponding to the sheet arrangement area 16b of the ring frame 16, Since there is no need to carry out the cutting process on the sheet arrangement area 16b of the ring frame 16, dust generated from the thermocompression bonding sheet 18A and metal dust generated by cutting the ring frame 16 together with the thermocompression bonding sheet 18A are eliminated. , contamination of the space (clean room) where processing is performed is prevented.

Once the ring frame 16 and the wafer 10 are integrated via the thermocompression sheets 18A and 18B based on the above-described integration method, the wafer 10 can be divided into individual parts as shown in FIGS. 8 and 9, for example. The device chip 12' can be processed satisfactorily. The cutting process and pickup process performed to divide the wafer 10 into individual device chips will be described below.

The wafer 10 integrated with the ring frame 16 via the thermocompression bonding sheets 18A and 18B by the above-described integration method is transported to a cutting device 60 (only a part of which is shown) shown in FIG. 8, and a chuck table (not shown) is transported. hold it. The cutting device 60 includes cutting means 62 . The cutting means 62 protects a spindle housing 62a, a rotating spindle 62b rotatably held by the spindle housing 62a, a cutting blade 62c fixed to the tip of the rotating spindle 62b and having a cutting edge on the outer periphery, and the cutting blade 62c. A blade cover 62d is provided. A cutting water supply means 62e is disposed on the blade cover 62d adjacent to the cutting blade 62c, and supplies cutting water introduced through the blade cover 62d toward the cutting position. A rotational drive source such as a motor (not shown) is accommodated at the other end of the spindle housing 62a, and the motor rotates the cutting blade 62c by rotating the rotational spindle 62d.

After the wafer 10 is transferred to the cutting device 60, a suitable alignment process is performed to detect the planned dividing line 14 of the wafer 10. Once the planned dividing line 14 is detected, the wafer 10 is positioned directly below the cutting means 62, and as shown in FIG. The means 62 is actuated to rotate the cutting blade 62c to form the dividing groove 110 along the dividing line 14 formed in a predetermined direction. Once the dividing groove 110 is formed along the predetermined dividing line 14, all dividing lines formed in the predetermined direction of the wafer 10 are indexed and fed in the Y-axis direction indicated by arrow Y. A dividing groove 110 is formed along 14. Next, the wafer 10 is rotated 90 degrees together with a chuck table (not shown), and dividing grooves 110 are formed along all dividing lines 14 in a direction orthogonal to the predetermined direction in which the dividing grooves 110 were previously formed. 110 to divide the wafer 10 into individual device chips 12' (see FIG. 8(b)). In this way, the dividing grooves 110 are formed along all the dividing lines 14 formed on the surface 10a of the wafer 10.

Once the dividing grooves 110 are formed as described above, a pick-up process is performed to pick up the device chips 12' from the thermocompression sheets 18A and 18B. The pickup process can be performed using, for example, a pickup device 70 shown in FIG. 9. The pickup device 70 includes an expanding means 74 that expands the thermocompression sheets 18A and 18B to increase the distance between adjacent device chips 12', and a pickup collet 72 that attracts and conveys the device chips 12'.

As shown in FIG. 9, the expansion means 74 includes a cylindrical expansion drum 74a, a plurality of air cylinders 74b adjacent to the expansion drum 74a and extending upward at intervals in the circumferential direction, and an upper end of each of the air cylinders 74b. and a plurality of clamps 74d arranged at intervals in the circumferential direction on the outer peripheral edge of the holding member 74c. The inner diameter of the expansion drum 74a is larger than the diameter of the wafer 10, and the outer diameter of the expansion drum 74a is smaller than the inner diameter of the ring frame 16. Further, the holding member 74c corresponds to the ring frame 16, and the ring frame 16 is placed on the flat upper surface of the holding member 74c.

As shown in FIG. 9, the plurality of air cylinders 74b have a reference position (indicated by a solid line) where the upper surface of the holding member 74c is approximately the same height as the upper end of the expansion drum 74a, and a reference position (indicated by a solid line) where the upper surface of the holding member 74c is at the same height as the upper end of the expansion drum 46. The holding member 74c is moved up and down relative to the expansion drum 74a between an expanded position (indicated by a two-dot chain line) located below the upper end. As shown in the figure, a pushing means 74e for pushing up the device chip 12' is arranged inside the expansion drum 74a. This pushing up means 74e is configured to be movable in the horizontal direction within the expansion drum 74a, and includes a push rod 74f that moves forward and backward in the vertical direction.

The pickup collet 72 shown in FIG. 9 is configured to be movable horizontally and vertically. Further, a suction means is connected to the pickup collet 72 so that the device chip 12' is attracted to the lower surface of the tip of the pickup collet 72.

Continuing the explanation with reference to FIG. 9, in the pick-up process, first, the wafer 10 divided into individual device chips 12' is faced upward, and the ring frame 16 is placed on the upper surface of the holding member 74c located at the reference position. I'll put it on. Next, the ring frame 16 is fixed with a plurality of clamps 74d. Next, by lowering the holding member 74c to the expanded position, radial tension is applied to the thermocompression sheets 18A, 18B. Then, as shown by the two-dot chain line in FIG. 9, the distance between the device chips 12' attached to the thermocompression sheets 18A and 18B increases.

Next, the pickup collet 72 is positioned above the device chip 12' to be picked up, and the pushing means 74e is positioned below the device chip 12' to be picked up. Next, the push rod 74f of the push-up means 74e is extended to push up the device chip 12' from below. Further, the pickup collet 72 is lowered, and the lower surface of the tip of the pickup collet 72 attracts the upper surface of the device chip 12'. Next, the pickup collet 72 is raised, and the device chip 12' is peeled off from the thermocompression sheets 18A and 18B and picked up. Next, the picked-up device chip 12' is transported to a tray or the like, or to a predetermined transport position for the next process. Then, such a pick-up operation is performed sequentially for all device chips 12'.

As described above, when the ring frame 16 and the wafer 10 are integrated via the thermocompression bonding sheets 18A, 18B, by implementing the above-described integration method of this embodiment, the thermocompression bonding sheets 18A, The compatibility between the outer periphery 19 of 18B and the ring frame 16 has been improved, and the problem of the outer periphery 19 of the thermocompression bonded sheets 18A and 18B being easily peeled off from the ring frame 16 has been resolved. Even during implementation, the thermocompression bonded sheets 18A, 18B are prevented from peeling off from the ring frame 16.

In the above-described embodiment, the thermocompression-bonded sheets 18A and 18B are polyethylene sheets, but the present invention is not limited thereto, and they can be appropriately selected from polyolefin sheets or polyester sheets.

When the thermocompression-bonded sheets 18A and 18B are selected from polyolefin sheets, they can be selected from polypropylene sheets and polystyrene sheets in addition to polyethylene sheets.

When polypropylene sheets are selected as the thermocompression sheets 18A and 18B, the heating temperature in the thermocompression bonding step and the additional thermocompression bonding step is preferably 160° C. to 180° C. Further, when polystyrene sheets are selected as the thermocompression sheets 18A and 18B, it is preferable that the heating temperature in the thermocompression bonding step and the additional thermocompression bonding step is 220° C. to 240° C.

When the thermocompression bonded sheets 18A and 18B are polyester sheets, they can be selected from polyethylene terephthalate sheets and polyethylene naphthalate sheets.

When polyethylene terephthalate sheets are selected as the thermocompression sheets 18A and 18B, it is preferable that the heating temperature in the thermocompression bonding step is 250° C. to 270° C. Further, when polyethylene naphthalate sheets are selected as the thermocompression bonding sheets 18A and 18B, it is preferable that the heating temperature in the thermocompression bonding step and the additional thermocompression bonding step is 160° C. to 180° C.

In the embodiment described above, the wafer 10 is made of silicon (Si), but the present invention is not limited thereto. The wafer 10 may be made of, for example, gallium nitride (GaN), gallium arsenide (GaAs), or glass.

10: Wafer 10a: Front side 10b: Back side 10c: Notch 12: Device 12': Device chip 14: Planned dividing line 16: Ring frame 16a: Opening 16b: Sheet arrangement area 18A, 18B: Thermocompression bonded sheet 19: Outer periphery 20 : Table 22: Frame member 24: Adsorption surface 30: Thermocompression bonding device 32: Heating roller 40: Cutting means 42: Cutting unit 44: Rotating shaft 46: Cutter 50: Heating means 52: Blower 54: Iron 54a: Inclined surface 60: Cutting device 62: Cutting means 62c: Cutting blade 70: Pick-up device 72: Pick-up collet 74: Expansion means 74a: Expansion drum 74b: Air cylinder 74c: Holding member 74e: Push-up means 74f: Push rod 100: Cutting groove 110: Dividing groove

Claims (6)

An integration method for integrating a ring frame with an opening for accommodating a wafer in the center and a sheet arrangement area and a wafer positioned in the opening using a thermocompression bonding sheet, the method comprising:
a placing step of placing a ring frame on a table and positioning and placing a wafer in an opening of the ring frame;
a laying process of laying a thermocompression bonding sheet on the wafer and the ring frame;
a thermocompression bonding process of heating and pressing the thermocompression bonding sheet to attach the thermocompression bonding sheet to the wafer and the ring frame;
a cutting step of cutting off the excess portion so that the outer periphery of the thermocompression bonded sheet fits within the sheet placement area of the ring frame;
an additional thermocompression bonding step of heating the outer periphery of the thermocompression bonding sheet to fit it into the ring frame so as to reduce the level difference between the cut outer periphery of the thermocompression bonding sheet and the ring frame;
An integrated method comprising: An integration method for integrating a ring frame with an opening for accommodating a wafer in the center and a sheet arrangement area and a wafer positioned in the opening using a thermocompression bonding sheet, the method comprising:
a placing step of placing a ring frame on a table and positioning and placing a wafer in an opening of the ring frame;
a laying step of laying a thermocompression bonded sheet of a size corresponding to the sheet placement area on the wafer and the ring frame;
a thermocompression bonding process of heating and pressing the thermocompression bonding sheet to attach the thermocompression bonding sheet to the wafer and the ring frame;
an additional thermocompression bonding step of heating the outer periphery of the thermocompression bonding sheet to adapt it to the ring frame so as to reduce the level difference between the outer periphery of the thermocompression bonding sheet and the ring frame;
An integrated method comprising: 3. The method of integration according to claim 1, wherein the thermocompression-bonded sheet is a polyolefin sheet or a polyester sheet. The polyolefin sheet is any one of a polyethylene sheet, a polypropylene sheet, and a polystyrene sheet,
4. The method of integration according to claim 3, wherein the polyester sheet is either a polyethylene terephthalate sheet or a polyethylene naphthalate sheet. The heating temperature when the ring frame and the wafer are integrated by the thermocompression sheet is 120° C. to 140° C. when a polyethylene sheet is selected as the thermocompression sheet, and when a polypropylene sheet is selected. is 160°C to 180°C, 220°C to 240°C if polystyrene sheet is selected, 250°C to 270°C if polyethylene terephthalate sheet is selected, and 250°C to 270°C if polyethylene naphthalate is selected. The integration method according to claim 4, wherein the temperature is 160°C to 180°C. 6. The integration method according to claim 1, wherein the wafer is made of Si, GaN, GaAs, or glass.