TW201403858A - Ｌｅｄ之製造方法 - Google Patents

Ｌｅｄ之製造方法 Download PDF

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TW201403858A
TW201403858A TW102121807A TW102121807A TW201403858A TW 201403858 A TW201403858 A TW 201403858A TW 102121807 A TW102121807 A TW 102121807A TW 102121807 A TW102121807 A TW 102121807A TW 201403858 A TW201403858 A TW 201403858A
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led wafer
substrate
heat
adhesive sheet
reflective layer
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Tomokazu Takahashi
Shinya Akizuki
Toshimasa Sugimura
Takeshi Matsumura
Daisuke Uenda
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Nitto Denko Corp
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    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
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    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H01L2221/68336—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding involving stretching of the auxiliary support post dicing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
    • H01L2221/68386—Separation by peeling

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  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Led Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Grinding Of Cylindrical And Plane Surfaces (AREA)

Abstract

本發明提供一種LED之製造方法，其可防止LED晶圓之損傷而良率較佳地製造LED，進而，於反射層之形成步驟中，可防止於發光元件之外側形成金屬層。本發明之LED之製造方法包括：對具備基板及於該基板之單面上之發光元件的LED晶圓之該基板進行研磨之背面研磨步驟，及於該基板之外側形成反射層之反射層形成步驟；且包括於該LED晶圓之該發光元件之外側貼附耐熱性黏著片。

Description

LED之製造方法
本發明係關於一種LED之製造方法。
先前，於LED之製造中，於基板上積層發光元件而形成LED晶圓，此後對該基板之與發光元件相反側之面進行研磨(背面研磨)，使基板厚度變薄(例如，專利文獻1、2)。通常，該研磨係將發光元件側之面經由黏著性之蠟固定於台上而進行。研磨後之LED晶圓例如被供於：對蠟進行加熱並剝離LED晶圓之步驟，洗淨附著於LED晶圓上之蠟之步驟，將LED晶圓切割分離成元件小片(切割)之步驟，於基板之與發光元件相反側之面形成反射層之步驟。背面研磨步驟後之LED晶圓非常薄，因此存在如下問題：於研磨基板時、及於上述後續步驟中，容易發生破裂等損傷。
通常，上述反射層係例如藉由MOCVD法、離子輔助電子束法等蒸鍍法而形成。於使用MOCVD法之情形時，使形成反射層之側向上(即，使基板之外側向上)而將LED晶圓載置於台上，此後對基板之外側之面進行蒸鍍處理。又，於使用離子輔助電子束法之情形時，自形成反射層之側之相反側(即，發光元件側)以蓋覆蓋LED晶圓，露出形成反射層之面(即，基板之外側之面)，並對該露出之面進行蒸鍍處理。然而，於此種先前之製造方法中，存在如下問題：金屬進入至LED晶圓中與形成反射層之面相反側之面(即，發光元件側之面)與台 或蓋之間，於發光元件之外側亦形成金屬層，而對LED之亮度造成不良影響。於供形成反射層之LED晶圓存在翹曲之情形時，及於反射層形成時LED晶圓中產生翹曲之情形時，上述問題變得更顯著。
[先前技術文獻] [專利文獻]
[專利文獻1]日本專利特開2005-150675號公報
[專利文獻2]日本專利特開2002-319708號公報
本發明係為了解決上述先前問題而完成者，其目的在於提供一種LED之製造方法，該方法可防止LED晶圓之損傷而良率較佳地製造LED，進而於反射層之形成步驟中可防止於發光元件之外側形成金屬層。
本發明之LED之製造方法包括：對具備基板及於該基板之單面之發光元件的LED晶圓之該基板進行研磨之背面研磨步驟，及該背面研磨步驟後於該基板之外側形成反射層之反射層形成步驟；且包括於該LED晶圓之該發光元件之外側貼附耐熱性黏著片。
於較佳之實施形態中，上述耐熱性黏著片具備硬質基體及黏著劑層。
於較佳之實施形態中，於上述背面研磨步驟中，貼附耐熱性黏著片，並將上述LED晶圓仍然貼附有該耐熱性黏著片地供於上述反射層形成步驟。
根據本發明，於LED晶圓之該發光元件之外側貼附耐熱性黏著片，藉此於LED之製造步驟中，可防止LED晶圓之損傷而良率較佳地 製造LED。又，於LED晶圓上仍然貼附有耐熱性黏著片之狀態下將該LED晶圓供於反射層形成步驟，藉此可防止於發光元件之外側形成金屬層。進而，可不更換貼附一片耐熱性黏著片而得到上述效果，因此，可效率較佳地製造LED。
1‧‧‧緩衝層
2‧‧‧n型半導體層
3‧‧‧發光層
4‧‧‧p型半導體層
5‧‧‧透明電極
6、7‧‧‧電極
10‧‧‧LED晶圓
11‧‧‧發光元件
12‧‧‧基板
20‧‧‧耐熱性黏著片
30‧‧‧黏著性蠟
40‧‧‧反射層
50‧‧‧LED
100‧‧‧台
200‧‧‧台
300‧‧‧切割帶
圖1(a)~(d)係對本發明之一實施形態之LED之製造方法中的背面研磨步驟進行說明的概略圖。
圖2係供於本發明之一實施形態之LED之製造方法的LED晶圓之概略剖面圖。
圖3(a)~(c)係對本發明之一實施形態之LED之製造方法中的反射層形成步驟進行說明之概略圖。
圖4(a)~(d)係對本發明之一實施形態之LED之製造方法中的切割步驟進行說明之概略圖。
圖5(a)~(f)係對本發明之另一實施形態之LED之製造方法的各步驟進行說明之概略圖。
本發明之一實施形態之LED之製造方法包括：對具備基板及於該基板之單面之發光元件的LED晶圓之該基板進行研磨之背面研磨步驟，及於該基板之外側形成反射層之反射層形成步驟。該反射層較佳為藉由蒸鍍法而形成。於本發明中，藉由以耐熱性黏著片保護LED晶圓，可於背面研磨步驟、反射層形成步驟等製造步驟及步驟間之處理時防止LED晶圓之破損(例如破裂)。又，於反射層形成步驟中，可防止於發光元件之外側形成金屬層(詳細情況稍後說明)。較佳為，於背面研磨步驟中被貼附之耐熱性黏著片仍然貼附於LED晶圓(即，不更換貼附)而被供於反射層形成步驟。
A.背面研磨步驟
圖1(a)~(d)係對本發明之一實施形態之LED之製造方法中的背面研磨步驟進行說明之概略圖。又，圖2係LED晶圓10之概略剖面圖。LED晶圓10具備發光元件11及基板12。發光元件11具有：緩衝層1、n型半導體層2、發光層3、p型半導體層4、透明電極5及電極6、7。發光層3包括例如，氮化鎵系化合物(GaN、AlGaN、InGaN)、磷化鎵系化合物(GaP、GaAsP)、砷化鎵系化合物(GaAs、AlGaAs、AlGaInP)、氧化鋅(ZnO)系化合物。再者，雖未圖示，但發光元件11可具有任意適當之其他元件。上述基板12由任意適當之材料構成。作為構成上述基板12之材料，例如可列舉：藍寶石、SiC、GaAs、GaN、GaP等。於使用由如該等材料般較硬且較脆之材料構成的LED晶圓10之情形時，可顯著獲得本發明之效果。
於背面研磨步驟中，首先，如圖1(a)所示般於LED晶圓10之發光元件11之外側貼附耐熱性黏著片20。
作為上述耐熱性黏著片20，只要可得到本發明之效果，則可使用任意適當之黏著片。較佳為，於後續步驟之反射層形成步驟中之蒸鍍處理時，較佳地使用即使暴露於高溫下(例如，135℃~200℃)亦不熔融、不產生氣體、並且維持黏著力之耐熱性黏著片。
上述耐熱性黏著片20具備例如基體及黏著劑層。該黏著劑層可設置於基體之單面，亦可設置於基體之兩面。
作為構成上述基體之材料，只要可得到本發明之效果，則可使用任意適當之材料。作為構成上述基體之材料，例如可列舉聚醯亞胺、聚萘二甲酸乙二酯等樹脂。若使用該等樹脂，則可得到耐熱性優異之耐熱性黏著片。
於上述基體由樹脂構成之情形時，該基體之厚度較佳為10μm~1000μm，更佳為25μm~700μm。
於一實施形態中，上述基體為硬質基體。於本說明書中，所謂 硬質基體，係指由25℃下之楊氏模數為70GPa以上之無機材料構成之基體。若使用具備硬質基體之耐熱性黏著片，則可於矯正LED晶圓之翹曲後進行反射層形成步驟，又，亦可防止於反射層形成步驟中產生之翹曲。其結果為，防止於發光元件11之外側形成金屬層之本發明之效果變得更顯著。
作為構成上述硬質基體之材料，可列舉：矽；玻璃；不鏽鋼等金屬；陶瓷等。
於上述基體為硬質基體之情形時，該硬質基體之厚度較佳為0.2mm~50mm，更佳為0.3mm~10mm。
作為構成上述黏著劑層之黏著劑，可使用任意適當之黏著劑。較佳為，使用即使於反射層形成步驟中之蒸鍍時之高溫下(例如，135℃~200℃)亦不熔融、不產生氣體、並且維持黏著力之黏著劑。又，上述黏著劑較佳為於加熱後亦可無糊劑殘留而剝離。作為上述黏著劑，例如可列舉：丙烯酸系黏著劑、矽酮系黏著劑、聚醯亞胺系黏著劑等。聚醯亞胺系黏著劑例如包含將使酸酐與具有醚結構之二胺發生反應而得到之聚醯胺酸進行醯亞胺化而得到的聚醯亞胺系樹脂。使上述酸酐與上述具有醚結構之二胺發生反應時，上述具有醚結構之二胺之調配比率為相對於上述酸酐100重量份較佳為5重量份~90重量份。
又，可對黏著劑層添加發泡劑。添加有發泡劑之黏著劑層因加熱而表現剝離性。更詳細而言，添加有發泡劑之黏著劑層係藉由加熱而使發泡劑發泡或膨脹，而使黏著力降低或消失。若使用具有此種黏著劑層之耐熱性黏著片，則研磨時LED晶圓被充分地固定，研磨後LED晶圓可容易地剝離。其結果為，可更顯著地防止LED晶圓之損傷。又，可容易地設計經自動化之步驟。作為發泡劑，可使用任意適當之發泡劑。作為發泡劑，例如可列舉：碳酸銨、碳酸氫銨、碳酸氫 鈉、亞硝酸銨、硼氫化鈉、疊氮化物類等無機發泡劑；氯氟烷烴、偶氮系化合物、肼系化合物、胺基脲系化合物、三唑系化合物、N-亞硝基系化合物等有機發泡劑。如上所述般般包含發泡劑之黏著劑層之詳細情況記載於日本專利特開平5-043851號公報、日本專利特開平2-305878號公報及日本專利特開昭63-33487號公報中，該等記載係作為參考而援用於本說明書中。
上述黏著劑層之厚度較佳為1μm~100μm，更佳為3μm~60μm。
於貼附耐熱性黏著片20之後，具有耐熱性黏著片之LED晶圓被固定於台100(圖1(b))。具有耐熱性黏著片之LED晶圓係例如如圖1(b)所示般藉由經由黏著性蠟30將耐熱性黏著片20與台100貼附而被固定。作為黏著性蠟30，只要可將LED晶圓10良好地固定，即可使用任意適當之蠟。作為黏著性蠟30，例如可列舉石蠟系蠟。於本發明中，LED晶圓10與黏著性蠟30不接觸，因此可防止LED晶圓10之污染。
於如上所述般進行固定之後，如圖1(c)所示般，對LED晶圓10之與發光元件11相反側之面(即，基板12)進行研磨。藉由以此方式進行研磨，可使基板12厚度變薄至所需厚度。研磨後之基板12之厚度較佳為10μm~500μm，更佳為50μm~300μm，最佳為80μm~150μm。又，所採用之LED晶圓10之直徑較佳為2英吋以上，更佳為3英吋以上，最佳為4英吋以上。LED晶圓10之直徑之上限並無特別限定，於實際使用中例如為12英吋左右。於本發明中，LED晶圓10被耐熱性黏著片20保護，因此於研磨時可防止LED晶圓10發生破損。又，由於如上所述般可防止LED晶圓10之破損，因此可處理較先前大型(例如，4英吋以上)之LED晶圓，並可良率較佳地製造LED。
於如上所述般對基板12進行研磨後，如圖1(d)所示般，將具有耐熱性黏著片之LED晶圓自台100剝離。例如，進行加熱直至黏著性蠟 30顯示流動性為止，將具有耐熱性黏著片之LED晶圓自台100剝離。於本發明中，LED晶圓10被耐熱性黏著片20保護，因此於自台100剝離時可防止LED晶圓10發生破損。
將具有耐熱性黏著片之LED晶圓自台100剝離之後，根據需要將黏著性蠟30洗淨。黏著性蠟30之洗淨係可將具有耐熱性黏著片之LED晶圓浸漬於可溶解黏著性蠟之有機溶劑中而進行。
B.反射層形成步驟
LED晶圓係於上述背面研磨步驟後被供於反射層形成步驟。圖3(a)~(c)係對本發明之一實施形態之LED之製造方法中的反射層形成步驟進行說明之概略圖。於圖3中，作為代表例，例示有利用有機金屬氣相成長法(MOCVD法)於LED晶圓10之基板12之外側形成反射層40的實施形態。
於本發明中，貼附有耐熱性黏著片20之LED晶圓10被供於反射層形成步驟。此時，耐熱性黏著片20被貼附於LED晶圓10之發光元件11側。耐熱性黏著片20係可於步驟間不更換貼附而仍然使用於背面研磨步驟中貼附之耐熱性黏著片20，亦可於步驟間更換貼附而使用新耐熱性黏著片20。於將耐熱性黏著片20在步驟間不更換貼附而使用之情形時，可效率較佳地製造LED。於將耐熱性黏著片20在步驟間更換貼附之情形時，藉由在上述背面研磨步驟之後剝離耐熱性黏著片20，而可將上述黏著性蠟30與耐熱性黏著片20一併去除，可省略蠟之洗淨。於反射層形成步驟中，使耐熱性黏著片20向下而將該具有耐熱性黏著片之LED晶圓載置於台200上(圖3(a))，此後，於LED晶圓10之與耐熱性黏著片20相反側(即，基板12側)形成反射層40(圖3(b))。藉由形成反射層40，可使來自發光元件11之光擷取量增加。
構成反射層40之材料只要可良好地反射來自發光元件11之光，即可使用任意適當之材料。作為構成反射層40之材料，例如可例示： 鋁、銀、金、鈀、鉑、銠、釕等金屬。由金屬構成之反射層40例如可利用蒸鍍法(例如，如圖示例所示般，MOCVD法)而形成。較佳為，於LED晶圓10之基板12之外側形成例如由SiO2、TiO2、ZrO2及/或MgF2形成之底層後，利用蒸鍍法形成由金屬構成之反射層40。根據本發明，藉由將於發光元件11之外側貼附有耐熱性黏著片20之LED晶圓10供於反射層形成步驟，而耐熱性黏著片20實現所謂之掩片(masking sheet)之作用，可防止金屬進入到LED晶圓10之背側而蒸鍍於發光元件11上。又，如上所述般，若使用硬質基體作為耐熱性黏著片之基體，則可矯正LED晶圓之翹曲，因此可提供於防止金屬蒸鍍於發光元件11方面可靠性更高之製造方法。根據本發明之製造方法，金屬層難以形成於發光元件11上，因此可得到亮度較高之LED。
於本發明中，作為反射層40之形成方法，並不限定於上述MOCVD法，亦可採用任意適當之其他方法。作為其他方法，例如可例示離子輔助電子束法。離子輔助電子束法中，通常，自形成反射層一側之相反側(即，發光元件側)以蓋覆蓋LED晶圓，露出形成反射層之面(即，基板之外側之面)，並對該露出之面進行蒸鍍處理。根據本發明，藉由將耐熱性黏著片貼附於發光元件之外側，即便於使用離子輔助電子束法之情形時，亦可防止金屬進入LED晶圓之背側而蒸鍍於發光元件。
如上所述，可得到形成有反射層40之LED晶圓10(圖3(c))。耐熱性黏著片20可於反射層形成步驟後立即被剝離，亦可將仍然貼附有耐熱性黏著片20之LED晶圓10供於後續步驟。若將仍然貼附有耐熱性黏著片20之LED晶圓10供於後續步驟，則可防止LED晶圓10於後續步驟及步驟間之處理時之破損。
C.其他步驟
本發明之LED之製造方法亦可進而包括任意適當之其他步驟。作 為其他步驟，例如可列舉將LED晶圓10切割分離成元件小片之步驟(切割步驟)等。
圖4(a)~(d)係對本發明之一實施形態之LED之製造方法中的切割步驟進行說明之概略圖。於該實施形態中，將反射層形成步驟後之LED晶圓10供於切割步驟。具體而言，使形成有反射層40之LED晶圓10之反射層40側向下而將LED晶圓10保持於切割帶300上(圖4(a))。於如圖示例般將仍然貼附有耐熱性黏著片20之LED晶圓10供於切割步驟之情形時，較佳為，於使LED晶圓10被保持於切割帶300上後剝離耐熱性黏著片20(圖4(b))。此後，將LED晶圓10(實質上為基板12)於厚度方向上進行半切(圖4(c))，此後，擴展切割帶300，以該切割部作為起點割斷形成有反射層40之LED晶圓10，而得到分離成元件小片之LED50(圖4(d))。
於圖4(c)~(d)中，已對將LED晶圓10進行半切並以該切割部作為起點割斷LED晶圓10的實施形態(劃線切割)做出說明。於圖4(c)中，係自發光元件11側進行半切，但亦可以基板12(反射層40)向上之方式更換貼附切割帶300並且自基板12側(反射層40側)進行半切。又，作為切割LED晶圓之方法，除了上述劃線切割之外，亦可採用任意適當之方法。作為其他方法，例如可列舉：於LED晶圓之整個厚度方向上進行切割並利用擴展而分離成元件小片的方法，僅於LED晶圓之厚度方向之中心部進行雷射切割並以該切割部作為起點進行割斷的方法(隱形切割(stealth dicing))等。
於圖4中，已對在形成用於割斷之切割部之前進行反射層形成步驟的實施形態做出說明。反射層形成步驟係可如上所述般於形成切割部之前進行，亦可如圖5所示般於形成切割部後進行。於圖5所示之實施形態中，以耐熱性黏著片20向下之方式將背面研磨步驟後之具有耐熱性黏著片之LED晶圓保持於切割帶300上(圖5(a))，此後，自基板12 側對LED晶圓10進行半切(圖5(b))。繼而，將以如上方式形成有切割部之LED晶圓10供於反射層形成步驟。即，使LED晶圓10之發光元件11側(耐熱性黏著片20側)向下而載置於台200上，而於LED晶圓10之基板12側形成反射層40(圖5(c))。LED晶圓10係可於耐熱性黏著片20之外側仍然黏貼有切割帶300之情形下載置於台200上，亦可於剝離切割帶300後載置於台200上(圖示例中，係於剝離切割帶300後載置)。繼而，使耐熱性黏著片20向上而將形成有反射層40之LED晶圓10再次保持於切割帶300上(圖5(d))，並剝離耐熱性黏著片20(圖5(e))。此後，擴展切割帶300，並且以上述切割部作為起點割斷LED晶圓10，得到分離成元件小片之LED50(圖5(f))。
較佳為，如圖4及圖5所示般，於在具有耐熱性黏著片之LED晶圓上形成反射層40後，將仍然貼附有該耐熱性黏著片之LED晶圓供於後續步驟(圖4(a)、圖5(d))。根據此種實施形態，耐熱性黏著片20保護LED晶圓10，可防止LED晶圓10於處理時發生破損。
10‧‧‧LED晶圓
11‧‧‧發光元件
12‧‧‧基板
20‧‧‧耐熱性黏著片
30‧‧‧黏著性蠟
100‧‧‧台

Claims (3)

  1. 一種LED之製造方法，其包括：對具備基板及於該基板之單面上之發光元件的LED晶圓之該基板進行研磨之背面研磨步驟，及該背面研磨步驟後，於該基板之外側形成反射層之反射層形成步驟；且包括於該LED晶圓之該發光元件之外側貼附耐熱性黏著片。
  2. 如請求項1之LED之製造方法，其中上述耐熱性黏著片具備硬質基體及黏著劑層。
  3. 如請求項1或2之LED之製造方法，其中於上述背面研磨步驟中貼附耐熱性黏著片，且將上述LED晶圓仍然貼附著該耐熱性黏著片而供於上述反射層形成步驟。
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