JP2014011244A - Ledの製造方法 - Google Patents
Ledの製造方法 Download PDFInfo
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- JP2014011244A JP2014011244A JP2012145451A JP2012145451A JP2014011244A JP 2014011244 A JP2014011244 A JP 2014011244A JP 2012145451 A JP2012145451 A JP 2012145451A JP 2012145451 A JP2012145451 A JP 2012145451A JP 2014011244 A JP2014011244 A JP 2014011244A
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- led wafer
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 28
- 239000000853 adhesive Substances 0.000 claims abstract description 72
- 230000001070 adhesive effect Effects 0.000 claims abstract description 72
- 239000000758 substrate Substances 0.000 claims abstract description 53
- 238000005498 polishing Methods 0.000 claims abstract description 11
- 239000010410 layer Substances 0.000 claims description 76
- 238000000034 method Methods 0.000 claims description 71
- 239000012790 adhesive layer Substances 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 abstract description 15
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- 229910002601 GaN Inorganic materials 0.000 description 3
- 229910005540 GaP Inorganic materials 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- 150000008065 acid anhydrides Chemical class 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 150000004985 diamines Chemical class 0.000 description 3
- 125000001033 ether group Chemical group 0.000 description 3
- ATRRKUHOCOJYRX-UHFFFAOYSA-N Ammonium bicarbonate Chemical compound [NH4+].OC([O-])=O ATRRKUHOCOJYRX-UHFFFAOYSA-N 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
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- UIIMBOGNXHQVGW-UHFFFAOYSA-M Sodium bicarbonate Chemical compound [Na+].OC([O-])=O UIIMBOGNXHQVGW-UHFFFAOYSA-M 0.000 description 2
- 239000001099 ammonium carbonate Substances 0.000 description 2
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- 229910002704 AlGaN Inorganic materials 0.000 description 1
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- 229910000013 Ammonium bicarbonate Inorganic materials 0.000 description 1
- 150000004008 N-nitroso compounds Chemical class 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
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- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- GEIAQOFPUVMAGM-UHFFFAOYSA-N ZrO Inorganic materials [Zr]=O GEIAQOFPUVMAGM-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
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- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 235000012538 ammonium bicarbonate Nutrition 0.000 description 1
- 235000012501 ammonium carbonate Nutrition 0.000 description 1
- CAMXVZOXBADHNJ-UHFFFAOYSA-N ammonium nitrite Chemical compound [NH4+].[O-]N=O CAMXVZOXBADHNJ-UHFFFAOYSA-N 0.000 description 1
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
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- 230000000873 masking effect Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 239000012188 paraffin wax Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920005575 poly(amic acid) Polymers 0.000 description 1
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 1
- 239000011112 polyethylene naphthalate Substances 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 150000003349 semicarbazides Chemical class 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 235000017557 sodium bicarbonate Nutrition 0.000 description 1
- 229910000030 sodium bicarbonate Inorganic materials 0.000 description 1
- 239000012279 sodium borohydride Substances 0.000 description 1
- 229910000033 sodium borohydride Inorganic materials 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
Images
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
- H01L2221/68336—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding involving stretching of the auxiliary support post dicing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
- H01L2221/68386—Separation by peeling
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Grinding Of Cylindrical And Plane Surfaces (AREA)
Abstract
【解決手段】本発明のLEDの製造方法は、基板と該基板の片面に発光素子とを備えるLEDウエハの該基板を研磨するバックグラインド工程と、該基板の外側に反射層を形成する反射層形成工程とを含むLEDの製造方法であって、該LEDウエハの該発光素子の外側に耐熱性粘着シートを貼着することを含む。
【選択図】図1
Description
好ましい実施形態においては、上記耐熱性粘着シートが、硬質基体と粘着剤層とを備える。
好ましい実施形態においては、上記バックグラインド工程において耐熱性粘着シートを貼着し、該耐熱性粘着シートを貼着したまま、上記LEDウエハを上記反射層形成工程に供する。
図1(a)から(d)は、本発明の1つの実施形態によるLEDの製造方法におけるバックグラインド工程を説明する概略図である。また、図2は、LEDウエハ10の概略断面図である。LEDウエハ10は、発光素子11と基板12とを備える。発光素子11は、緩衝層1、n型半導体層2、発光層3、p型半導体層4、透明電極5および電極6、7を有する。発光層3は、例えば、窒化ガリウム系化合物(GaN、AlGaN、InGaN)、リン化ガリウム系化合物(GaP、GaAsP)、ヒ素化ガリウム系化合物(GaAs、AlGaAs、AlGaInP)、酸化亜鉛(ZnO)系化合物等を含む。なお、図示しないが、発光素子11は任意の適切なその他の部材を有し得る。上記基板12は、任意の適切な材料により構成される。上記基板12を構成する材料としては、例えば、サファイア、SiC、GaAs、GaN、GaP等が挙げられる。これらの材料のように硬くて脆い材料で構成されるLEDウエハ10を用いる場合、本発明の効果が顕著に得られる。
LEDウエハは、上記バックグラインド工程後、反射層形成工程に供される。図3(a)から(c)は、本発明の1つの実施形態によるLEDの製造方法における反射層形成工程を説明する概略図である。図3においては、代表例として、有機金属気相成長法(MOCVD法)により、LEDウエハ10の基板12の外側に反射層40を形成させる実施形態を示す。
本発明のLEDの製造方法は、任意の適切なその他の工程をさらに含んでいてもよい。その他の工程としては、例えば、LEDウエハ10を素子小片に切断分離する工程(ダイシング工程)等が挙げられる。
11 発光素子
12 基板
20 耐熱性粘着シート
30 粘着性ワックス
40 反射層
50 LED
Claims (3)
- 基板と該基板の片面に発光素子とを備えるLEDウエハの該基板を研磨するバックグラインド工程と、
該バックグラインド工程後、該基板の外側に反射層を形成する反射層形成工程とを含むLEDの製造方法であって、
該LEDウエハの該発光素子の外側に耐熱性粘着シートを貼着することを含む、
LEDの製造方法。 - 前記耐熱性粘着シートが、硬質基体と粘着剤層とを備える、請求項1に記載のLEDの製造方法。
- 前記バックグラインド工程において耐熱性粘着シートを貼着し、
該耐熱性粘着シートを貼着したまま、前記LEDウエハを前記反射層形成工程に供する、
請求項1または2に記載のLEDの製造方法。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012145451A JP2014011244A (ja) | 2012-06-28 | 2012-06-28 | Ledの製造方法 |
EP13171551.8A EP2680325A3 (en) | 2012-06-28 | 2013-06-11 | Method of manufacturing a light emitting diode |
US13/917,330 US20140004637A1 (en) | 2012-06-28 | 2013-06-13 | Method of manufacturing an led |
TW102121807A TW201403858A (zh) | 2012-06-28 | 2013-06-19 | Led之製造方法 |
KR1020130074523A KR20140001782A (ko) | 2012-06-28 | 2013-06-27 | Led의 제조 방법 |
CN201310270481.3A CN103531676A (zh) | 2012-06-28 | 2013-06-28 | Led的制造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012145451A JP2014011244A (ja) | 2012-06-28 | 2012-06-28 | Ledの製造方法 |
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JP2014011244A true JP2014011244A (ja) | 2014-01-20 |
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JP2012145451A Pending JP2014011244A (ja) | 2012-06-28 | 2012-06-28 | Ledの製造方法 |
Country Status (6)
Country | Link |
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US (1) | US20140004637A1 (ja) |
EP (1) | EP2680325A3 (ja) |
JP (1) | JP2014011244A (ja) |
KR (1) | KR20140001782A (ja) |
CN (1) | CN103531676A (ja) |
TW (1) | TW201403858A (ja) |
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CN106129220B (zh) * | 2016-07-22 | 2019-02-12 | 厦门三安光电有限公司 | 一种led芯片的制作方法及其制作设备 |
CN106784200B (zh) * | 2017-02-15 | 2018-10-19 | 西安中为光电科技有限公司 | 一种隐形切割和背镀led芯片的制作方法 |
CN112750921B (zh) * | 2019-10-30 | 2022-03-11 | 山东浪潮华光光电子股份有限公司 | 一种砷化镓基led芯片的制作方法 |
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JP2613389B2 (ja) | 1987-04-17 | 1997-05-28 | 日東電工株式会社 | 発泡型粘着シート |
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2013
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- 2013-06-13 US US13/917,330 patent/US20140004637A1/en not_active Abandoned
- 2013-06-19 TW TW102121807A patent/TW201403858A/zh unknown
- 2013-06-27 KR KR1020130074523A patent/KR20140001782A/ko not_active Application Discontinuation
- 2013-06-28 CN CN201310270481.3A patent/CN103531676A/zh active Pending
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Also Published As
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EP2680325A2 (en) | 2014-01-01 |
EP2680325A3 (en) | 2014-03-26 |
US20140004637A1 (en) | 2014-01-02 |
TW201403858A (zh) | 2014-01-16 |
KR20140001782A (ko) | 2014-01-07 |
CN103531676A (zh) | 2014-01-22 |
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