TW201407833A - 發光二極體之製造方法 - Google Patents
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- H01L2224/8319—Arrangement of the layer connectors prior to mounting
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- H01L2924/11—Device type
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Abstract
本發明提供一種可防止LED晶圓之損傷且良率良好地製造LED之簡便且環境負擔較小之發光二極體之製造方法。本發明之發光二極體之製造方法包含對具備發光元件及基板之LED晶圓之該基板進行研磨之背面研磨步驟,且於該背面研磨步驟中,包含於經由雙面黏著片將該LED晶圓固定於工作台後研磨該基板之操作。於較佳之實施形態中,上述雙面黏著片於至少單面具有熱剝離黏著劑層。
Description
本發明係關於一種發光二極體(LED)之製造方法。
先前,於LED之製造中,於基板上積層發光元件而形成LED晶圓後,對基板之與發光元件為相反側之面進行研磨(背面研磨),使基板薄壁化(例如,專利文獻1、2)。通常,該研磨係將發光元件側之面經由黏著性蠟固定於工作台而進行。研磨後之LED晶圓例如被提供給加熱蠟而剝離LED晶圓之步驟、清洗附著於LED晶圓上之蠟之步驟、將LED晶圓切割分離(切晶)為元件小片之步驟、及於基板之與發光元件為相反側之面上形成反射層之步驟。
上述背面研磨步驟係將LED晶圓形成為非常薄之步驟,因此,存在於研磨時容易對LED晶圓產生破裂等損傷之問題。又,存在上述蠟之塗佈及清洗需要步驟數之問題、及因蠟之清洗中使用溶劑故環境負擔較大之問題。進而,亦存在因清洗液而對LED造成不良影響之問題。
[專利文獻1]日本專利特開2005-150675號公報
[專利文獻2]日本專利特開2002-319708號公報
本發明係為解決上述先前之課題而完成者,其目的在於提供一種可防止LED晶圓之損傷且良率良好地製造LED之簡便且環境負擔較小之發光二極體之製造方法。
本發明之發光二極體之製造方法包含對具備發光元件及基板之LED晶圓之該基板進行研磨之背面研磨步驟,且於該背面研磨步驟中,包含於經由雙面黏著片將該LED晶圓固定於工作台後研磨該基板之操作。
於較佳之實施形態中,上述雙面黏著片於至少單面具有熱剝離黏著劑層。
於較佳之實施形態中,上述雙面黏著片具有基體及形成於該基體之單面之熱剝離黏著劑層,且將該熱剝離黏著劑層貼附於上述LED晶圓,將上述LED晶圓固定於上述工作台。
於較佳之實施形態中,上述雙面黏著片具有基體及形成於該基體之單面之熱剝離黏著劑層,且將該熱剝離黏著劑層貼附於上述工作台,將上述LED晶圓固定於上述工作台。
於較佳之實施形態中,上述雙面黏著片具有基體及形成於該基體之兩面之熱剝離黏著劑層。
於較佳之實施形態中,於上述雙面黏著片與上述LED晶圓之間進而配置另一黏著片,將該LED晶圓固定於工作台。
根據本發明,於背面研磨步驟中,在經由雙面黏著片將LED晶圓固定於工作台之後,研磨LED晶圓,藉此可防止LED晶圓之損傷且良率良好地製造LED。又,根據本發明,LED晶圓之固定無需使用蠟,因此無需進行蠟之塗佈及清洗,可簡便地製造LED。又,可避免使用
溶劑等清洗液,因此可環境負擔較小且簡便地製造LED。進而,可防止清洗液對LED造成之不良影響。
1‧‧‧緩衝層
2‧‧‧n型半導體層
3‧‧‧發光層
4‧‧‧p型半導體層
5‧‧‧透明電極
6‧‧‧電極
7‧‧‧電極
100‧‧‧LED晶圓
110‧‧‧基板
120‧‧‧發光元件
200‧‧‧雙面黏著片
200'‧‧‧熱剝離性雙面黏著片
200"‧‧‧熱剝離性雙面黏著片
210‧‧‧黏著劑層
211‧‧‧熱剝離黏著劑層
220‧‧‧基體
300‧‧‧工作台
400‧‧‧另一黏著片
410‧‧‧黏著劑層
420‧‧‧基體
500‧‧‧反射層
600‧‧‧切晶帶
700‧‧‧LED
圖1(a)至(d)係說明本發明之一實施形態之發光二極體之製造方法中之背面研磨步驟之概略圖。
圖2係被提供給本發明之一實施形態之發光二極體之製造方法之LED晶圓之概略剖面圖。
圖3(a)至(c)係說明本發明之另一實施形態之發光二極體之製造方法中之背面研磨步驟之概略圖。
圖4(a)至(c)係說明本發明之又一實施形態之發光二極體之製造方法中之背面研磨步驟之概略圖。
圖5(a)至(c)係說明本發明之進而又一實施形態之發光二極體之製造方法中之背面研磨步驟之概略圖。
圖6(a)至(c)係說明本發明之進而又一實施形態之發光二極體之製造方法中之背面研磨步驟之概略圖。
圖7(a)至(e)係說明本發明之一實施形態之發光二極體之製造方法中之背面研磨步驟後之各步驟之概略圖。
圖8(a)至(e)係說明本發明之另一實施形態之發光二極體之製造方法中之背面研磨步驟後之各步驟之概略圖。
A.背面研磨步驟
本發明之發光二極體之製造方法包含對具備發光元件及基板之LED晶圓之該基板進行研磨之背面研磨步驟。
圖1(a)至(d)係說明本發明之一實施形態之發光二極體之製造方法中之背面研磨步驟之概略圖。又,圖2係LED晶圓100之概略剖面圖。LED晶圓100包括基板110及發光元件120。上述基板110包含任意適當
之材料。作為構成上述基板110之材料,可列舉例如藍寶石、SiC、GaAs、GaN、GaP等。於使用包含如該等材料般硬且脆之材料之LED晶圓100之情形時,可顯著地獲得防止LED晶圓100之破損之本發明之效果。發光元件120包括緩衝層1、n型半導體層2、發光層3、p型半導體層4、透明電極5及電極6、7。發光層3包括例如氮化鎵系化合物(GaN、AlGaN、InGaN)、磷化鎵系化合物(GaP、GaAsP)、砷化鎵系化合物(GaAs、AlGaAs、AlGaInP)、氧化鋅(ZnO)系化合物等。再者,雖未圖示,但發光元件120可包括任意適當之其他構件。
於本發明之發光二極體之製造方法中,首先,如圖1(a)所示,經由雙面黏著片200將該LED晶圓100固定於工作台300。此時,LED晶圓100係以基板110成為外側(上側)之方式被固定。接著,如圖1(b)所示,對LED晶圓100之基板110進行研磨。如此藉由研磨,可使基板110薄壁化至所期望之厚度。研磨後之基板110之厚度為10μm~500μm,更佳為50μm~300μm,尤佳為80μm~150μm。又,所使用之LED晶圓100之直徑較佳為2英吋以上,更佳為3英吋以上,尤佳為4英吋以上。LED晶圓100之直徑之上限無特別限定,但於實用上例如為12英吋左右。於本發明之發光二極體之製造方法中,雙面黏著片200亦具有保護LED晶圓100之功能,因此可防止研磨時LED晶圓100破損。又,由於可如此般防止LED晶圓100之破損,因此可處理較先前大型(例如,4英吋以上)之LED晶圓,且可良率良好地製造LED。接著,如圖1(c)或圖1(d)所示,自工作台300剝離LED晶圓100。此時,可將雙面黏著片200殘留於工作台300而僅將LED晶圓100自工作台300剝離(圖1(c)),亦可自工作台300剝離附帶雙面黏著片之LED晶圓(圖1(d))。較佳為,如圖1(d)所示,自工作台300剝離附帶雙面黏著片之LED晶圓。如此,可防止自工作台300剝離時LED晶圓100破損。
作為上述雙面黏著片200,只要可獲得本發明之效果,則可使用
任意適當之雙面黏著片。於一實施形態中,如圖1所示,使用包括基體220及於該基體220之兩面上之黏著劑層210之雙面黏著片200。作為構成上述基體之材料,可列舉例如:聚乙烯、聚丙烯、聚丁烯、聚丁二烯、聚甲基戊烯等聚烯烴、聚氯乙烯、氯乙烯共聚物、聚對苯二甲酸乙二酯、聚對苯二甲酸丁二酯、聚胺基甲酸酯、乙烯-乙酸乙烯酯共聚物、乙烯-(甲基)丙烯酸共聚物、乙烯-(甲基)丙烯酸酯共聚物、聚苯乙烯、聚碳酸酯、聚醯亞胺、氟系樹脂等。作為上述基體之形態,可列舉例如膜、織布、不織布等。又,上述基體亦可為紙或者金屬箔。作為構成上述黏著劑層之材料,可列舉橡膠系樹脂、丙烯酸系樹脂、矽酮系樹脂、聚醯亞胺系樹脂等。
於另一實施形態中,作為上述雙面黏著片,使用於至少單面具有熱剝離黏著劑層之雙面黏著片。以下,於本說明書中,將具有熱剝離黏著劑層之雙面黏著片亦稱為「熱剝離性雙面黏著片」。熱剝離性雙面黏著片藉由加熱,使熱剝離黏著劑層面之黏著力降低或消失,而變得可剝離。若使用熱剝離性雙面黏著片,則於研磨時LED晶圓被充分地固定,並且於研磨後可容易地剝離LED晶圓。結果,可更顯著地防止LED晶圓之損傷。又,可容易地設計經自動化之步驟。如圖3~圖5所示,上述熱剝離性雙面黏著片200'、200"具備上述基體220及熱剝離黏著劑層211。熱剝離黏著劑層211例如包含接著劑或黏著劑、及發泡劑。熱剝離性雙面黏著片200'係藉由加熱,而發泡劑發泡或者膨脹而進行剝離。作為接著劑(黏著劑),可使用任意適當之接著劑(黏著劑),例如可列舉丙烯酸系接著劑(黏著劑)、橡膠系接著劑(黏著劑)、苯乙烯-共軛二烯嵌段共聚物系接著劑(黏著劑)等。作為發泡劑,可使用任意適當之發泡劑。作為發泡劑,例如可列舉碳酸銨、碳酸氫銨、碳酸氫鈉、亞硝酸銨、硼氫化鈉、疊氮類等無機系發泡劑;氯氟烷烴、偶氮系化合物、肼系化合物、胺脲系化合物、三唑系化合物、N-
亞硝基系化合物等有機系發泡劑。此種熱剝離性雙面黏著片之詳情記載於日本專利特開平5-043851號公報、日本專利特開平2-305878號公報及日本專利特開昭63-33487號公報中,該等記載以參考之形式引用於本說明書中。
於使用熱剝離性雙面黏著片作為雙面黏著片之情形時,熱剝離性雙面黏著片可如圖3及圖4所示般於基體220之單面具有熱剝離黏著劑層211,亦可如圖5所示般於基體220之兩面具有熱剝離黏著劑層211。
於圖3所示之實施形態中,熱剝離性雙面黏著片200'於基體220之單面具有熱剝離黏著劑層211,將該熱剝離黏著劑層211貼附於LED晶圓100(實質上為發光元件120),將LED晶圓100固定於工作台300。於熱剝離性雙面黏著片200'之與熱剝離黏著劑層211為相反側之面(即,工作台300側之面)可設置黏著劑層210,並且將該黏著劑層210側貼附於工作台300(圖3(a))。於圖3所示之實施形態中,對基板110進行研磨(圖3(b)),其後,進行加熱,以熱剝離黏著劑層面為起點將LED晶圓100自熱剝離性雙面黏著片200'剝離(圖3(c))。於本實施形態中,可防止研磨時之LED晶圓100之破損,進而,可藉由一次操作(加熱)而剝離LED晶圓100。
於圖4所示之實施形態中,熱剝離性雙面黏著片200'於基體220之單面具有熱剝離黏著劑層211,並且將該熱剝離黏著劑層211貼附於工作台300,將LED晶圓100固定於工作台300。於熱剝離性雙面黏著片200'之與熱剝離黏著劑層211為相反側之面(即,LED晶圓100側之面)上可設置黏著劑層210,並且將該黏著劑層210側貼附於LED晶圓100(圖4(a))。於圖4所示之實施形態中,對基板110進行研磨(圖4(b)),其後,進行加熱,以熱剝離黏著劑層面為起點將LED晶圓100與熱剝離性雙面黏著片200'之積層體自工作台300剝離(圖4(c))。於本
實施形態中,其後,將熱剝離性雙面黏著片200'自LED晶圓100剝離。熱剝離性雙面黏著片200'可於背面研磨步驟後隨即剝離,亦可於進行了特定之後續步驟(例如,反射層形成步驟)之後剝離。於本實施形態中,可防止研磨時及其後之處理時之LED晶圓100之破損,進而,可防止熱剝離性雙面黏著片200'剝離後之對LED晶圓100之糊劑殘留。
於圖5所示之實施形態中,熱剝離性雙面黏著片200"於基體220之兩面具有熱剝離黏著劑層211(圖5(a))。於圖5所示之實施形態中,對基板110進行研磨(圖5(b)),其後,進行加熱,以熱剝離黏著劑層面為起點剝離LED晶圓100及熱剝離性雙面黏著片200"之各者(圖5(c))。於本實施形態中,可防止研磨時之LED晶圓100之破損,且可藉由一次操作(加熱)而剝離LED晶圓100。進而,可與剝離LED晶圓100同時將熱剝離性雙面黏著片200"自工作台300剝離。根據本實施形態,於將複數個LED晶圓依序提供給背面研磨步驟時,可連續地且效率良好地進行加工。
於進而又一實施形態中,如圖6(a)所示,於熱剝離性雙面黏著片200'與LED晶圓100之間進而配置另一黏著片400,將LED晶圓100固定於工作台300。更詳細而言,另一黏著片400可配置於熱剝離性雙面黏著片200'之熱剝離黏著劑層211與LED晶圓100之發光元件120之間。於本實施形態中,對基板110進行研磨(圖6(b)),其後,進行加熱,以熱剝離黏著劑層面為起點將LED晶圓100與另一黏著片400之積層體自熱剝離性雙面黏著片200'剝離(圖6(c))。於本實施形態中,其後,將另一黏著片400自LED晶圓100剝離。另一黏著片400可於背面研磨步驟後隨即剝離,亦可於進行了特定之後續步驟(例如,反射層形成步驟)之後剝離。於本實施形態中,可防止研磨時及其後之處理時之LED晶圓100之破損,進而,可防止對LED晶圓100之糊劑殘留。
作為上述另一黏著片400,可使用任意適當之黏著片。另一黏著
片400具有例如基體420及該基體420之單面上之黏著劑層410。作為構成基體420及黏著劑層410之材料,可使用與上述說明之雙面黏著片200相同之材料。
再者,於圖6中,對使用在基體220之單面具有熱剝離黏著劑層211之熱剝離性雙面黏著片200'之實施形態進行了說明,但當然可使用在基體220之兩面具有熱剝離黏著劑層211之熱剝離性雙面黏著片200"。
如上所述,於本發明之發光二極體之製造方法中,對於LED晶圓之固定無需使用先前必需之蠟。因此,根據本發明,無需蠟之塗佈及清洗,可簡便地製造LED。又,可避免使用溶劑等清洗液,因此可環境負擔較小且簡便地製造LED。進而,可防止清洗液對LED造成之不良影響。
B.其他步驟(背面研磨步驟後之步驟)
以上述方式對基板110進行研磨之背面研磨步驟後之LED晶圓100例如被提供給將LED晶圓100切割分離為元件小片之步驟(切晶步驟)、使反射層形成於基板之與發光元件為相反側之面之步驟(反射層形成步驟)等後續步驟。
圖7(a)至(e)係說明本發明之一實施形態之發光二極體之製造方法之各步驟之概略圖。
於本實施形態中,如圖7(a)至(b)所示,將背面研磨步驟後之LED晶圓100提供給反射層形成步驟。具體而言,使LED晶圓100之基板110側向上,將LED晶圓100載置於工作台300上(圖7(a)),其後,於基板110之外側形成反射層500(圖7(b))。藉由形成反射層500,可使來自發光元件120之光提取量增加。構成反射層500之材料只要可使來自發光元件120之光良好地反射,則可使用任意適當之材料。作為構成反射層500之材料,例如可列舉鋁、銀、金、鈀、鉑、銠、釕等金屬。
包含金屬之反射層500例如可藉由蒸鍍法(例如,有機金屬氣相沈積法(MOCVD法))形成。較佳為,於LED晶圓100之基板110之外側形成例如包含SiO2、TiO2、ZrO2及/或MgF2之底層後,藉由蒸鍍法形成包含金屬之反射層500。
於形成反射層500之後,如圖7(c)至7(e)所示,將形成有反射層500之LED晶圓100提供給切晶步驟。具體而言,將LED晶圓100保持於切晶帶600上(圖7(c)),其後,沿厚度方向半切割LED晶圓100(實質上為基板110)(圖7(d)),其後,延伸(expand)切晶帶600,以該切割部為起點將形成有反射層500之LED晶圓100割斷,獲得分離為元件小片之LED700(圖7(e))。
於圖7(d)至(e)中,對半切割LED晶圓100且以該切割部為起點將LED晶圓100割斷之實施形態(刻劃切晶)進行了說明。作為切割LED晶圓之方法,除該刻劃切晶之外,亦可採用任意適當之方法。作為其他方法,例如可列舉:切割LED晶圓之厚度方向全部且藉由延伸分離為元件小片之方法、僅雷射切割LED晶圓之厚度方向之中心部且以該切割部為起點進行割斷之方法(隱形切晶(stealth dicing))等。
於圖7中,對在形成用於割斷之切割部之前,進行反射層形成步驟之實施形態進行了說明。反射層形成步驟可如上所述般在形成切割部之前進行,亦可如圖8所示般在形成切割部之後進行。於圖8之實施形態中,將背面研磨步驟後之LED晶圓100保持於切晶帶600上(圖8(a)),半切割LED晶圓100(圖8(b))。接著,將以上述方式形成有切割部之LED晶圓100提供給反射層形成步驟。即,使LED晶圓100之發光元件120側向下,載置於工作台300上且於LED晶圓100之基板110側形成反射層500(圖8(c))。接著,使形成有切割部之側向上,將形成有反射層500之LED晶圓100再次保持於切晶帶600上(圖8(d)),以該切割部為起點將LED晶圓100割斷,獲得分離為元件小片之LED700(圖
8(e))。
於背面研磨步驟後之LED晶圓具備雙面黏著片之情形時(例如,圖1(d)、圖4(c)),於後續步驟中,該雙面黏著片以任意適當之時序被剝離。例如,可於將附帶雙面黏著片之LED晶圓保持於切晶帶上後,剝離雙面黏著片後,進行圖8(a)至圖8(e)之操作。
100‧‧‧LED晶圓
110‧‧‧基板
120‧‧‧發光元件
200‧‧‧雙面黏著片
210‧‧‧黏著劑層
220‧‧‧基體
300‧‧‧工作台
Claims (6)
- 一種發光二極體之製造方法,其包含對具備發光元件及基板之LED晶圓之該基板進行研磨之背面研磨步驟,且於該背面研磨步驟中,包含於經由雙面黏著片將該LED晶圓固定於工作台後研磨該基板之操作。
- 如請求項1之發光二極體之製造方法,其中上述雙面黏著片於至少單面具有熱剝離黏著劑層。
- 如請求項2之發光二極體之製造方法,其中上述雙面黏著片具有基體及形成於該基體之單面之熱剝離黏著劑層,且將該熱剝離黏著劑層貼附於上述LED晶圓,將上述LED晶圓固定於上述工作台。
- 如請求項2之發光二極體之製造方法,其中上述雙面黏著片具有基體及形成於該基體之單面之熱剝離黏著劑層,且將該熱剝離黏著劑層貼附於上述工作台,將上述LED晶圓固定於上述工作台。
- 如請求項2之發光二極體之製造方法,其中上述雙面黏著片具有基體及形成於該基體之兩面之熱剝離黏著劑層。
- 如請求項3或5之發光二極體之製造方法,其中於上述雙面黏著片與上述LED晶圓之間進而配置另一黏著片,將該LED晶圓固定於工作台。
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JP2012145449A JP2014011242A (ja) | 2012-06-28 | 2012-06-28 | Ledの製造方法 |
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TW201407833A true TW201407833A (zh) | 2014-02-16 |
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US (1) | US20140000793A1 (zh) |
EP (1) | EP2680323A1 (zh) |
JP (1) | JP2014011242A (zh) |
KR (1) | KR20140001784A (zh) |
CN (1) | CN103531674A (zh) |
TW (1) | TW201407833A (zh) |
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US9425418B2 (en) | 2014-09-30 | 2016-08-23 | Lg Display Co., Ltd. | Flexible display device with bend stress reduction member and manufacturing method for the same |
EP3207563A4 (en) * | 2014-10-17 | 2018-05-30 | Intel Corporation | Micro pick and bond assembly |
JP6354694B2 (ja) * | 2015-07-28 | 2018-07-11 | 豊田合成株式会社 | 半導体素子の製造方法 |
US11183415B2 (en) | 2016-06-22 | 2021-11-23 | Nissan Chemical Corporation | Adhesive containing polydimethyl siloxane |
CN106098864A (zh) * | 2016-06-28 | 2016-11-09 | 山东浪潮华光光电子股份有限公司 | 一种led用砷化镓衬底减薄工艺中的贴片方法 |
KR20180075733A (ko) | 2016-12-26 | 2018-07-05 | 엘지디스플레이 주식회사 | 플렉서블 표시장치 |
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JP2613389B2 (ja) | 1987-04-17 | 1997-05-28 | 日東電工株式会社 | 発泡型粘着シート |
JP2698881B2 (ja) | 1989-05-19 | 1998-01-19 | 日東電工株式会社 | 膨脹型粘着部材 |
JP2970963B2 (ja) | 1991-08-14 | 1999-11-02 | 日東電工株式会社 | 剥離性感圧接着剤及びその粘着部材 |
JP3784202B2 (ja) * | 1998-08-26 | 2006-06-07 | リンテック株式会社 | 両面粘着シートおよびその使用方法 |
JP2002083785A (ja) * | 2000-09-07 | 2002-03-22 | Nec Kansai Ltd | 半導体素子の製造方法 |
JP2002319708A (ja) | 2001-04-23 | 2002-10-31 | Matsushita Electric Works Ltd | Ledチップおよびled装置 |
WO2003014242A1 (fr) * | 2001-08-03 | 2003-02-20 | Sekisui Chemical Co., Ltd. | Bande recouverte d'un double adhesif et procede de fabrication de puce pour circuit integre utilisant cette bande |
JP4565804B2 (ja) * | 2002-06-03 | 2010-10-20 | スリーエム イノベイティブ プロパティズ カンパニー | 被研削基材を含む積層体、その製造方法並びに積層体を用いた極薄基材の製造方法及びそのための装置 |
JP2004300231A (ja) * | 2003-03-31 | 2004-10-28 | Nitto Denko Corp | 熱剥離性両面粘着シート、被着体の加工方法および電子部品 |
JP4592270B2 (ja) * | 2003-10-06 | 2010-12-01 | 日東電工株式会社 | 半導体ウエハの支持材からの剥離方法およびこれを用いた装置 |
TWI234298B (en) | 2003-11-18 | 2005-06-11 | Itswell Co Ltd | Semiconductor light emitting diode and method for manufacturing the same |
JP4381860B2 (ja) * | 2004-03-24 | 2009-12-09 | 日東電工株式会社 | 補強半導体ウエハに固定された補強板の分離方法およびその装置 |
JP4970863B2 (ja) * | 2006-07-13 | 2012-07-11 | 日東電工株式会社 | 被加工物の加工方法 |
US7691225B2 (en) * | 2007-01-15 | 2010-04-06 | Nitto Denko Corporation | Thermal-release double-coated pressure-sensitive adhesive tape or sheet and method of processing adherend |
JP5307612B2 (ja) * | 2009-04-20 | 2013-10-02 | 株式会社ディスコ | 光デバイスウエーハの加工方法 |
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2013
- 2013-06-10 US US13/913,807 patent/US20140000793A1/en not_active Abandoned
- 2013-06-11 EP EP13171545.0A patent/EP2680323A1/en not_active Withdrawn
- 2013-06-27 KR KR1020130074530A patent/KR20140001784A/ko not_active Application Discontinuation
- 2013-06-28 TW TW102123376A patent/TW201407833A/zh unknown
- 2013-06-28 CN CN201310268817.2A patent/CN103531674A/zh active Pending
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EP2680323A1 (en) | 2014-01-01 |
KR20140001784A (ko) | 2014-01-07 |
CN103531674A (zh) | 2014-01-22 |
JP2014011242A (ja) | 2014-01-20 |
US20140000793A1 (en) | 2014-01-02 |
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