TWI697139B - 發光元件 - Google Patents

發光元件 Download PDF

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TWI697139B
TWI697139B TW105104582A TW105104582A TWI697139B TW I697139 B TWI697139 B TW I697139B TW 105104582 A TW105104582 A TW 105104582A TW 105104582 A TW105104582 A TW 105104582A TW I697139 B TWI697139 B TW I697139B
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layer
reflective layer
light
semiconductor layer
disposed
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TW201703293A (zh
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黃逸儒
莊東霖
沈志銘
許聖宗
黃冠傑
黃靖恩
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新世紀光電股份有限公司
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Abstract

一種發光元件，包括一磊晶結構、一黏著層、一第一反射層、一第二反射層、一阻擋層、一第一電極以及一第二電極。磊晶結構包括一基板、一第一半導體層、一發光層以及一第二半導體層。黏著層設置於磊晶結構之第二半導體層上。第一反射層設置於黏著層上。第二反射層設置於第一反射層上且延伸至黏著層上。自第二反射層朝磊晶結構的方向定義一投影方向。第二反射層在投影方向上之投影面積大於第一反射層在投影方向上之投影面積。阻擋層設置於第二反射層上且具有導電性。第一電極電性連接於第一半導體層。第二電極電性連接於第二半導體層。

Description

發光元件
本發明關於一種發光元件，尤指一種可有效增加反射面積之發光元件。
請參閱第1圖，第1圖為先前技術之發光元件1的示意圖。如第1圖所示，發光元件1包括一磊晶結構10、一歐姆接觸層12、一反射層14、一阻擋層16以及二電極18，其中歐姆接觸層12、反射層14、阻擋層16與電極18皆設置於磊晶結構10上。反射層14用以將磊晶結構10之發光層100發出的光線反射，阻擋層16則用以吸收光線。一般而言，反射層14之材料係為具有高反射率的銀或銀合金。由於銀的化學性質較為活潑，在高溫時不穩定，容易亂竄，因此，習知技術會將反射層14的面積限制在一定的範圍內，以避免反射層14在後續製程中因溫度提高而流竄至磊晶結構10，進而影響出光表現。相對地，反射層14之反射面積也受到限制，可反射的光線有限，使得發光元件1的整體出光效率無法有效提升。
本發明提供一種可有效增加反射面積之發光元件，以解決上述問題。
根據一實施例，本發明之發光元件包括一磊晶結構、一黏著層、一第一反射層、一第二反射層、一阻擋層、一第一電極以及一第二電極。磊晶結構包括一基板、一第一半導體層、一發光層以及一第二半導體層。黏著層設置於磊晶結構之第二半導體層上。第一反射層設置於黏著層上。第二反射層設置於第一反射層上且延伸至黏著層上。自第二反射層朝磊晶結構的方向定義一投影方向。第二反射層在投影方向上之投影面積大於第一反射層在投影方向上之投影面積。阻擋層設置於第二反射層上且具有導電性。第一電極電性連接於第一半導體層。第二電極電性連接於第二半導體層。
在一實施例中，第一反射層之材料可為銀或銀合金，且第二反射層之材料可為非銀金屬、非銀合金或由多層非銀金屬層所組成，其中第一反射層之反射率大於第二反射層之反射率，且第二反射層之反射率大於或等於80%。
另一實施例中，第一反射層之材料可為鋁或鋁合金，且第二反射層之材料可為非金屬材料或絕緣性的多層材料層所組成，例如包括但不限於是布拉格反射層，其中第一反射層之反射率小於第二反射層之反射率，且第二反射層之反射率大於或等於80%。
綜上所述，本發明係於第一反射層上增設第二反射層，且使第二反射層延伸至黏著層上，使得第二反射層之投影面積大於第一反射層之投影面積。換言之，本發明可先將化學性質較為活潑的第一反射層（例如，銀或銀合金）設置在黏著層上的一定範圍內，以避免第一反射層材料在後續製程中因溫度提高而流竄至磊晶結構。接著，再將化學性質較不活潑的第二反射層（例如，非銀金屬或非銀合金或絕緣性材料）設置於第一反射層上，且使第二反射層延伸至黏著層上。藉此，本發明即可利用第二反射層有效增加整體的反射面積，進而提升發光元件之整體出光效率。
關於本發明之優點與精神可以藉由以下的發明詳述及所附圖式得到進一步的瞭解。
請參閱第2圖，第2圖為根據本發明第一實施例之發光元件3的示意圖。如第2圖所示，發光元件3包括一磊晶結構30、一黏著層32、一第一反射層34、一第二反射層36、一阻擋層38、一第一電極40以及一第二電極42。磊晶結構30包括一基板300、一第一半導體層302、一發光層304以及一第二半導體層306，其中第一半導體層302位於基板300上，發光層304位於第一半導體層302上，且第二半導體層306位於發光層304上。基板300之材料可為藍寶石，但不以此為限。第一電極40電性連接於第一半導體層302，且第二電極42電性連接於第二半導體層306。第一半導體層302 可為N型半導體層（例如，N型氮化鎵層），且第二半導體層306可為P型半導體層（例如，P型氮化鎵層）。此時，第一電極40即為N型電極，且第二電極42即為P型電極。
黏著層32設置於磊晶結構30之第二半導體層306上。於此實施例中，黏著層32可為金屬薄膜或金屬氧化物層，例如氧化銦錫（Indium tin oxide, ITO），其中金屬薄膜的厚度小於20nm。第一反射層34設置於黏著層32上。於此實施例中，第一反射層34之材料可為銀或銀合金。第二反射層36設置於第一反射層34上且延伸至黏著層32上。於此實施例中，第二反射層36之材料可為非銀金屬、非銀合金或由多層金屬層所組成，例如鋁或鋁合金。阻擋層38設置於第二反射層36上且具有導電性。於此實施例中，阻擋層38之材料可為鉑、金、鎢、鈦或鈦鎢合金。此外，第二反射層36與阻擋層38可在同一道製程成型，使得第二反射層36之側表面360與阻擋層38之側表面380切齊。第二電極42係設置於阻擋層38上，以經由阻擋層38、第二反射層36與黏著層32電性連接於磊晶結構30之第二半導體層306。
另一實施例中，第一反射層34之材料可為鋁或鋁合金。第二反射層36之材料可為非銀金屬、非銀合金或由多層絕緣材料層所組成。其中阻擋層38設置於第二反射層36上且不具有導電性。阻擋層38之材料可與第二反射層36具相同材料且可在同一道製程成型。第二電極42係設置於阻擋層38上，並以電性連接於磊晶結構30之第二半導體層306。
如第2圖所示，自第二反射層36朝磊晶結構30的方向定義一投影方向D。由於第二反射層36設置於第一反射層34上且延伸至黏著層32上，因此，第二反射層36在投影方向D上之投影面積A1大於第一反射層34在投影方向D上之投影面積A2且第一反射層34在投影方向D上之投影面積A2與發光層304在投影方向D上之投影面積A4之比值小於30%，其中一實施例中，第一反射層34在投影方向D上之投影面積A2與發光層304在投影方向D上之投影面積A4之比值小於10%。本發明可先將化學性質較為活潑的第一反射層34（例如，銀或銀合金）設置在黏著層32上的一定範圍內，以避免第一反射層34在後續製程中因溫度提高而流竄至磊晶結構30。接著，再將化學性質較不活潑的第二反射層36（例如，非銀金屬或非銀合金）設置於第一反射層34上，且使第二反射層36延伸至黏著層32上。藉此，本發明即可利用第二反射層36有效增加整體的反射面積，進而提升發光元件3之整體出光效率。於此實施例中，第二反射層36之反射率大於阻擋層38之反射率，且第二反射層36之反射率大於或等於80%。
配合第2圖，請參閱第3圖，第3圖為根據本發明第二實施例之發光元件5的示意圖。發光元件5與上述的發光元件3的主要不同之處在於，發光元件5之第二反射層36之側表面360、阻擋層38之側表面380與黏著層32之側表面320切齊。換言之，第二反射層36在投影方向D上之投影面積A1可等於黏著層32在投影方向D上之投影面積A3且第一反射層34在投影方向D上之投影面積A2與發光層304在投影方向D上之投影面積A4之比值小於30%，其中一實施例中，第一反射層34在投影方向D上之投影面積A2與發光層304在投影方向D上之投影面積A4之比值小於10%，以進一步增加整體的反射面積。
配合第3圖，請參閱第4圖，第4圖為根據本發明第三實施例之發光元件7的示意圖。發光元件7與上述的發光元件5的主要不同之處在於，發光元件7之第二反射層36進一步延伸至磊晶結構30之第二半導體層306上，使得第二反射層36在投影方向D上之投影面積A1大於黏著層32在投影方向D上之投影面積A3且第一反射層34在投影方向D上之投影面積A2與發光層304在投影方向D上之投影面積A4之比值小於30%，其中在一實施例中，第一反射層34在投影方向D上之投影面積A2與發光層304在投影方向D上之投影面積A4之比值小於10%。藉此，可再進一步增加整體的反射面積。
配合第4圖，請參閱第5圖，另一實施例中，第5圖為根據本發明第四實施例之發光元件9的示意圖。第二反射層36之材料可為非銀金屬、非銀合金，或由多層絕緣材料層所組成，例如包括但不限於是布拉格反射層。第一反射層34之材料可為鋁或鋁合金，其中阻擋層38設置於第二反射層36上且不具有導電性。阻擋層38之材料可與第二反射層36具相同材料且可在同一道製程成型。第二電極42係設置於阻擋層38上，並以電性連接於磊晶結構30之第二半導體層306。發光元件9與上述的發光元件7的主要不同之處在於，發光元件9之第二反射層36進一步延伸至磊晶結構30之第一半導體層302上，使得第二反射層36在投影方向D上之投影面積A1大於發光層304在投影方向D上之投影面積A4且第一反射層34在投影方向D上之投影面積A2與發光層304在投影方向D上之投影面積A4之比值小於30%，其中在一實施例中，第一反射層34在投影方向D上之投影面積A2與發光層304在投影方向D上之投影面積A4之比值小於10%。藉此，可再進一步增加整體的反射面積。
綜上所述，本發明係於第一反射層上增設第二反射層，且使第二反射層延伸至黏著層上，使得第二反射層之投影面積大於第一反射層之投影面積。換言之，本發明可先將化學性質較為活潑的第一反射層（例如，銀或銀合金）設置在黏著層上的一定範圍內，以避免第一反射層在後續製程中因溫度提高而流竄至磊晶結構。接著，再將化學性質較不活潑的第二反射層（例如，非銀金屬或非銀合金）設置於第一反射層上，且使第二反射層延伸至黏著層上。藉此，本發明即可利用第二反射層有效增加整體的反射面積，進而提升發光元件之整體出光效率。 以上所述僅為本發明之較佳實施例，凡依本發明申請專利範圍所做之均等變化與修飾，皆應屬本發明之涵蓋範圍。
1、3、5、7、9‧‧‧發光元件 10、30‧‧‧磊晶結構 12‧‧‧歐姆接觸層 14‧‧‧反射層 16、38‧‧‧阻擋層 18‧‧‧電極 32‧‧‧黏著層 34‧‧‧第一反射層 36‧‧‧第二反射層 40‧‧‧第一電極 42‧‧‧第二電極 100、304‧‧‧發光層 300‧‧‧基板 302‧‧‧第一半導體層 306‧‧‧第二半導體層 320、360、380‧‧‧側表面 D‧‧‧投影方向 A1、A2、A3、A4‧‧‧投影面積
第1圖為先前技術之發光元件的示意圖。 第2圖為根據本發明第一實施例之發光元件的示意圖。 第3圖為根據本發明第二實施例之發光元件的示意圖。 第4圖為根據本發明第三實施例之發光元件的示意圖。 第5圖為根據本發明第四實施例之發光元件的示意圖。
3‧‧‧發光元件
30‧‧‧磊晶結構
32‧‧‧黏著層
34‧‧‧第一反射層
36‧‧‧第二反射層
38‧‧‧阻擋層
40‧‧‧第一電極
42‧‧‧第二電極
300‧‧‧基板
302‧‧‧第一半導體層
304‧‧‧發光層
306‧‧‧第二半導體層
360、380‧‧‧側表面
D‧‧‧投影方向
A1、A2‧‧‧投影面積

Claims (9)

  1. 一種發光元件，包括：一磊晶結構，包括一基板、設置於該基板上的一第一半導體層、一發光層以及設置於該第一半導體層上且暴露該第一半導體層的一第二半導體層；一黏著層，設置於該第二半導體層上；一金屬層，設置於該黏著層上，且暴露出該黏著層的一部分的一上表面；一布拉格反射層，覆蓋該金屬層、該暴露的黏著層、該第二半導體層的一側表面以及該暴露的第一半導體層的至少一部分；一阻擋層，包括一金屬，覆蓋至少一部分的該布拉格反射層且電性浮接；一第一電極，電性連接於該第一半導體層；以及一第二電極，藉由該金屬層電性連接於該第二半導體層以及該黏著層。
  2. 如請求項1所述之發光元件，其中該金屬層之材料為銀、銀合金、鋁或鋁合金。
  3. 如請求項1所述之發光元件，其中該阻擋層之材料包括非銀金屬、非銀合金、鋁或鋁合金。
  4. 如請求項1所述之發光元件，其中該黏著層包括一金屬層或一金屬氧化層。
  5. 一種發光元件，包括：一磊晶結構，包括一基板、設置於該基板上的一第一半導體層、一發光層以及設置於該第一半導體層上且暴露該第一半導體層的一第二半導體層；一黏著層，設置於該第二半導體層上；一金屬層，設置於該黏著層上，且暴露出該黏著層的一部分的一上表面；一具有多層絕緣層的包覆層，包覆該金屬層、該暴露的黏著層、該第二半 導體層的一側表面以及該暴露的第一半導體層的至少一部分；一阻擋層，包括一金屬，覆蓋至少一部分的該包覆層；一第一電極，電性連接於該第一半導體層；以及一第二電極，藉由該阻擋層電性連接於該金屬層以及該黏著層。
  6. 如請求項5所述之發光元件，其中該金屬層之材料包括銀、銀合金、鋁或鋁合金。
  7. 如請求項5所述之發光元件，其中該黏著層包括一金屬層或一金屬氧化層。
  8. 如請求項5所述之發光元件，其中該些絕緣層包括一布拉格反射層。
  9. 如請求項5所述之發光元件，其中該阻擋層之材料包括鉑、金、鎢、鈦鎢合金、鋁或鋁合金。
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