WO2014091914A1 - Led装置及びその製造方法 - Google Patents
Led装置及びその製造方法 Download PDFInfo
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- WO2014091914A1 WO2014091914A1 PCT/JP2013/081660 JP2013081660W WO2014091914A1 WO 2014091914 A1 WO2014091914 A1 WO 2014091914A1 JP 2013081660 W JP2013081660 W JP 2013081660W WO 2014091914 A1 WO2014091914 A1 WO 2014091914A1
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- led
- led die
- led device
- fluorescent member
- die
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
Definitions
- the present invention relates to an LED device effective for a chip size package and a manufacturing method thereof.
- the LED die which is a bare chip, has also increased in size and has become available on the order of 1 mm ⁇ (0.5-1) mm. Since this size is almost the same as that of other chip components such as resistors, it has been desired that an LED device in which an LED die is packaged with a resin or the like has a planar size comparable to that of the LED die.
- This package is sometimes referred to as a chip size package (hereinafter referred to as “CSP”) because it directly reflects the size of the LED die.
- CSP chip size package
- a small mounting area and a small number of package members may be used.
- the CSP has a feature that the degree of freedom in designing a lighting device or the like is increased because the number mounted on the mother board can be easily changed according to the required luminance.
- FIG. 13 is a cross-sectional view of a CSP-based light emitting device 100 (LED device) shown as a first conventional example.
- the light emitting device 100 shown in FIG. 13 is the ultimate device of CSP, and is an LED device in which the chip size of the LED die matches the outer shape of the package, and is disclosed in Patent Document 1.
- the phosphor layer 130 and the lens 132 are laminated on the upper surface of the laminated body 112c (semiconductor layer). Under the laminated body 112c, there are seed metals 122a and 122b, copper wiring layers 124a and 124b that remain without etching the common electrode during electrolytic plating, and columnar copper pillars 126a and 126b formed by electrolytic plating.
- the stacked body 112c includes a p-type cladding layer 112a, a light emitting layer 112e, and an n-type cladding layer 112b.
- the lower surface of the stacked body 112c is covered with an insulating layer 120 that is partially opened.
- Solder balls 136a and 136b are attached to the lower portions of the copper pillars 126a and 126b.
- a reinforcing resin 128 is filled between the copper pillars 126a and 126b.
- the planar size of the LED device 100 shown in FIG. 13 matches the planar size of the laminate 112c.
- the LED device 100 is obtained by dividing a wafer in which the LED devices 100 are arranged and connected, and is sometimes referred to as a WLP (wafer level package) because it is the smallest in the product group divided by the CSP. . Since the LED device 100 removes the transparent insulating substrate (see paragraph 0026 and FIG. 2 of Patent Document 1) originally on the stacked body 112c, the light from the light emitting layer 112e is emitted only upward (arrow B). . For this reason, the phosphor layer 130 may be provided only on the LED device 100.
- the manufacturing apparatus since a laser is used to remove the transparent insulating substrate, the manufacturing apparatus becomes large and the manufacturing process becomes long. Moreover, since the LED device 100 forms the phosphor layer 130 at the wafer level, it cannot cope with variations in the light emission characteristics of individual LED dies on the wafer. As a result, there is a problem that it becomes difficult to manage the emission color.
- the inventor of the present application leaves a transparent insulating substrate as an LED device that is small in size and easy to control the emission color, and the side surface of the transparent insulating substrate is made of a reflective resin together with the side surface of the semiconductor layer formed on the lower surface thereof.
- An LED device for flip chip mounting was produced in which the transparent insulating substrate and the upper surface of the reflective resin were covered with a phosphor sheet (see Patent Document 2).
- FIG. 14 is a cross-sectional view of an LED device 200 shown as a second conventional example.
- the LED device 200 is the LED device disclosed in Patent Document 2.
- the LED device 200 includes an LED die 216b having a sapphire substrate 214b (transparent insulating substrate) and a semiconductor layer 215b formed on the lower surface thereof, and includes a white reflective member 217b (reflective resin) on the side surface.
- a phosphor sheet 211b that converts the wavelength of emitted light is provided on the upper surface of the reflecting member 217b.
- the protruding electrodes 218b and 219b connected to the semiconductor layer 215b of the LED die 216b are an anode and a cathode, respectively, and are external connection electrodes for connecting to the mother substrate.
- the mother board is a board on which the LED device 200 is mounted together with other electronic components such as resistors and capacitors.
- the LED device 200 can selectively change the phosphor sheet 211b in accordance with the light emission characteristics of the individual LED die 216b, the emission color can be easily managed. Further, since the white reflecting member 217b functions sufficiently even when the thickness is 100 ⁇ m or less, the LED device 200 can be downsized. Furthermore, the LED device 200 is easy to manufacture because it can be processed in a state where a large number of LED dies 216b are arranged, and finally an individual LED device 200 can be obtained by dividing into individual pieces.
- the LED device 200 it is conceivable to apply the LED device 200 to a camera flash or the like.
- the LED device 200 that emits a large amount of light from the side surface of the phosphor sheet 211b with respect to a flash that needs to be illuminated only in the photographing range cannot secure a sufficient amount of light in the region to be photographed.
- the LED device 200 is not suitable for use in brightly illuminating a limited area.
- An object of the present invention is to provide an LED device that is small in size, has good luminous efficiency, and has a narrow light distribution, and a method for manufacturing the LED device.
- the LED device includes an LED die having a reflection frame surrounding the outer periphery of the LED device, a transparent insulating substrate, a semiconductor layer formed on the lower surface side of the transparent insulating substrate, and an external connection electrode disposed on the semiconductor layer;
- a fluorescent member that is disposed on at least the upper surface side of the die and that converts the wavelength of light emitted from the LED die, and has an inclined surface that contacts the side surface of the fluorescent member on the inner side of the reflective frame;
- the reflection frame is formed so that the inner diameter of the reflection frame increases toward the upper surface side.
- the fluorescent member when the external connection electrode side is the lower surface, the fluorescent member is present on the upper surface side of the LED die.
- the reflection frame surrounds the periphery of the fluorescent member, and has an inclined surface whose inner diameter expands from the bottom to the top. In other words, the reflection frame is in contact with the side portion of the fluorescent member and spreads downward on the slope portion.
- the LED device has a structure that is easy to miniaturize because an LED die having an external connection electrode, a fluorescent member, and a reflection frame are integrated. The light that tries to travel in the lateral direction in the LED device is reflected by the slope of the reflecting frame and efficiently travels upward. As a result, luminous efficiency is improved. At the same time, there is no light emitted from the lateral direction of the LED device, so light distribution is reduced.
- the position of the bottom surface of the LED die on the lower surface side is substantially the same as the position of the lowermost surface of the LED die on the inclined surface, and the fluorescent member is disposed in the gap between the inclined surface and the side surface of the LED die. It is preferable.
- the position of the bottom surface on the lower surface side of the LED die is substantially the same as that of the lowermost portion of the lower surface side of the LED die, and the gap between the inclined surface and the side surface of the LED die is different from that of the fluorescent member. It is preferable that a fluorescent member or a translucent member is disposed.
- the fluorescent member is a fluorescent sheet, and the fluorescent sheet is bonded to the upper surface of the LED die.
- the reflective frame is made of a reflective resin.
- the bottom surface on the lower surface side of the LED die is covered with a reflective resin except for the region occupied by the external connection electrodes.
- the reflection frame has an inclined surface and a flat portion inside, and the flat portion covers the side surface of the LED die.
- the upper surface side of the LED die inside the reflection frame has a surface perpendicular to the bottom surface of the lower surface side of the LED die, and the inclined surface is formed on the lower surface side of the LED die inside the reflection frame. It is preferable to have.
- a manufacturing method of an LED device including a reflection frame that surrounds an outer peripheral portion, an LED die, and a fluorescent member that converts the wavelength of light emitted from the LED die is the external connection electrode side disposed on the lower surface side of the LED die on the first support sheet.
- the reflective frame made of the reflective resin has a step of filling the V-shaped groove with the reflective resin, and thus has a slope on the inside. Due to this slope, the light that travels in the lateral direction in the LED device is directed upward, propagates through the gap between the side of the LED die and the reflection frame, and exits from the upper surface of the LED device to the outside. As a result, luminous efficiency is improved. At the same time, there is no light emitted from the lateral direction of the LED device, so the light distribution is narrowed down.
- the groove forming step first, a groove having a rectangular cross section is formed in the fluorescent member, and then a slope is formed with a V-shaped blade in a part of the groove having a rectangular cross section from the bottom surface side of the fluorescent member. It is preferable to form a groove having a slope on the bottom surface side.
- Another method of manufacturing an LED device including a reflective frame that surrounds the outer periphery, an LED die, and a fluorescent member that converts the wavelength of light emitted from the LED die is an external connection arranged on the lower surface side of the LED die on a large-sized phosphor sheet.
- the method further comprises a step of dividing the reflective resin to obtain an LED device.
- the reflective frame made of the reflective resin has a step of filling the V-shaped groove with the reflective resin, and thus has a slope on the inside. Due to this slope, the light that travels in the lateral direction in the LED device is directed upward, propagates through the gap between the side of the LED die and the reflection frame, and exits from the upper surface of the LED device to the outside. As a result, luminous efficiency is improved. At the same time, there is no light emitted from the lateral direction of the LED device, so the light distribution is narrowed down.
- the LED device described above has a structure that is easy to miniaturize because the LED die having the external connection electrode, the fluorescent member, and the reflection frame are integrated, and because the inner surface of the reflection frame has a slope, the luminous efficiency is good and it is arranged at the same time. The light is squeezed.
- the above LED device manufacturing method applies a so-called collective method, forms a V-shaped groove between LED dies, and fills the groove with a reflective resin, so that when it is separated into individual pieces, it has a reflection on its inner surface.
- a frame can be formed.
- the LED device thus obtained has a structure that is easy to miniaturize because the LED die having the external connection electrode, the fluorescent member, and the reflecting frame are integrated, and the inner surface of the reflecting frame has an inclined surface to emit light. The light distribution is narrowed down efficiently.
- FIG. 1 is an external view of an LED device 10.
- FIG. It is AA 'sectional drawing of the LED apparatus 10 shown in FIG. It is explanatory drawing (1) of the manufacturing process of the LED apparatus 10 shown in FIG. It is explanatory drawing (2) of the manufacturing process of the LED apparatus 10 shown in FIG. It is sectional drawing of the other LED apparatus 50.
- FIG. FIG. 6 is a cross-sectional view of still another LED device 60.
- FIG. 6 is a cross-sectional view of still another LED device 70. It is explanatory drawing (1) of the manufacturing process of the LED apparatus 70 shown in FIG. It is explanatory drawing (2) of the manufacturing process of the LED apparatus 70 shown in FIG.
- FIG. 6 is a cross-sectional view of still another LED device 90.
- FIG. 1 shows the appearance of the LED device 10
- FIG. 1 (a) is a plan view
- FIG. 1 (b) is a front view
- FIG. 1 (c) is a bottom view.
- FIG. 1A when the LED device 10 is viewed from above, a rectangular reflection frame 12 and a fluorescent member 11 inside the rectangular reflection frame 12 are observed.
- FIG. 1B when the LED device 10 is viewed from the front, two external connection electrodes 15 are observed under the reflection frame 12.
- FIG. 1C When the LED device 10 is viewed from below as shown in FIG. 1C, the rectangular reflection frame 12, the fluorescent member 11 and the semiconductor layer 14 inside the rectangular reflection frame 12, and two externals in the region inside the semiconductor layer 14 The connection electrode 15 is observed. Comparing FIG. 1 (a) and FIG. 1 (c) for the reflective frame 12, the width of FIG. 1 (c) is wider because there is an inclined surface inside the reflective frame 12 as will be described later.
- FIG. 2 is a cross-sectional view taken along the line AA ′ of FIG.
- the LED device 10 includes a reflection frame 12 that surrounds the outer periphery, an LED die 16, and a fluorescent member 11 that converts the wavelength of light emitted from the LED die 16.
- the LED die 16 includes a sapphire substrate 13 that is a transparent insulating substrate and a semiconductor layer 14, and the semiconductor layer 14 is formed on the lower surface side of the sapphire substrate 13.
- the semiconductor layer 14 has two external connection electrodes 15.
- the fluorescent member 11 exists inside the reflection frame 12 and covers the upper surface and side surfaces of the LED die 16.
- the inside of the reflection frame 12 is a slope.
- the fluorescent member 11 is obtained by kneading and curing phosphor fine particles in a silicone resin, and has a thickness of about 100 to 300 ⁇ m.
- the fluorescent member 11 may be a fluorescent glass or a fluorescent plate obtained by sintering a fluorescent material. When it is desired to reduce the loss due to concentration quenching, the phosphor concentration in the fluorescent member is lowered and the fluorescent member 11 is set thicker.
- the fluorescent member 11 converts the wavelength of the blue light emitted from the LED die 16 to white.
- the reflective frame 12 is a reflective resin in which reflective fine particles such as titanium oxide and alumina are kneaded with a binder such as silicone resin or organopolysiloxane and thermally cured, and the width is 50 to 100 ⁇ m.
- the reflective frame 12 in the case of the LED die 16 having a plane size of 0.8 mm ⁇ 0.3 mm, the plane size of the LED device 10 is about 1.1 mm ⁇ 0.6 mm, and the surface mounter (surface mounter) Easy to handle.
- the sapphire substrate 13 included in the LED die 16 has a thickness of about 80 to 120 ⁇ m.
- the semiconductor layer 14 formed on the lower surface of the sapphire substrate 13 has a thickness of about 10 ⁇ m, includes a p-type semiconductor layer and an n-type semiconductor layer, and a boundary surface thereof serves as a light emitting layer.
- An interlayer insulating film and a protective film exist below the semiconductor layer 14, and an external connection electrode 15 is formed on the protective film.
- the two external connection electrodes 15 are an anode and a cathode, and are connected to the p-type semiconductor layer and the n-type semiconductor layer via wiring on the interlayer insulating film, respectively.
- the external connection electrode 15 is an electrode for connecting to a mother board on which other electronic components such as a resistor and a capacitor are mounted, and has a thickness of several hundred nm to several tens of ⁇ m. It has a tin layer.
- the fluorescent member 11 exists between the side surface of the LED die 16 of the LED device 10 and the reflection frame 12. If the side surface of the LED die 16 and the reflection frame 12 are in contact with each other, light that is about to be emitted from the side surface of the sapphire substrate 13 is returned into the sapphire substrate 13. The light returned into the sapphire substrate 13 is attenuated by loss due to reflection and reabsorption by the semiconductor layer 14, leading to a decrease in the emission efficiency of the LED device.
- the fluorescent member 11 exists between the side surface of the LED die 16 and the reflection frame 12. For this reason, most of the light emitted from the side surface of the LED die 16 and reflected by the reflecting frame 12 through the fluorescent member 11 (although some of the light may enter the sapphire substrate 13 again) It propagates in the fluorescent member 11 existing between the side portion and the reflection frame 12, travels upward, and exits from the LED device 10. As a result, the loss due to reflection or the rate of reabsorption by the semiconductor layer 14 is reduced, and the emission efficiency is improved. Further, since there is no light directed to the side of the LED device by the reflection frame 12, the light distribution is narrowed down.
- the inclined surface of the reflection frame 12 is in contact with the side surface of the fluorescent member 11 and is configured such that the inner diameter of the reflection frame 12 (the distance between the left and right reflection frames 12) increases from the lower surface side of the LED die 16 toward the upper surface side. Has been.
- 3 and 4 are explanatory diagrams of the manufacturing process of the LED device 10.
- the manufacturing process shown in FIGS. 3 and 4 is a so-called assembly method, in which a large number of LED dies 16 are arranged at a predetermined pitch on a supporting sheet, and various processes are performed on the assembly. Finally, this assembly is separated into individual LED devices 10. Several hundred to several thousand LED dies 16 are arranged on the support sheet, but only two LED dies 16 are shown in FIGS.
- a large number of LED dies 16 are arranged on the first support sheet 31.
- each LED die 16 is arranged on the first support sheet 31 with the external connection electrode 15 of the LED die 16 facing down.
- the LED dies 16 may be arranged on the first support sheet 31 one by one with a picker or the like.
- a plurality of LED dies 16 may be arranged once in another adhesive sheet, and the plurality of LED dies 16 may be collectively attached to the first support sheet 31.
- the bottom surface of the LED die 16 excluding the external connection electrode 15 is also in contact with the adhesive layer.
- the LED dies 16 to be arranged are selected in advance so as to obtain a desired emission color.
- the upper and side surfaces of the LED die 16 are changed in order to distinguish the fluorescent member 11a (a member included in a single LED device from a member included in an assembly). The same shall apply hereinafter).
- a squeegee or a mold is used as is well known.
- the fluorescent member 11a is cured by heating.
- the second support sheet 32a is attached to the upper surface of the fluorescent member 11a.
- the assembly including a large number of LED dies 16 is turned upside down.
- the first support sheet 31 is peeled off.
- a V-shaped (wedge-shaped) blade 33 is prepared.
- the space between the LED dies 16 is cut off from the bottom surface side of the LED die 16 with a blade 33 to form a V-shaped groove 34 in the fluorescent member 11a.
- the groove 34 is filled with the reflective resin 35.
- the reflection resin 35 is a resin in which reflective fine particles such as titanium oxide and alumina are kneaded with a silicone resin as described above, and an appropriate amount is dropped with a dispenser and is uniformly filled using a capillary phenomenon. When filling is completed, the reflective resin 35 is cured by heating.
- the reflective resin 35 is cut, and the LED device 10 singulated is obtained.
- a dicer is used for cutting. Moreover, you may cut
- the LED device 10 includes a reflective frame 12 made of a reflective resin, but the material of the reflective frame 12 is not limited to the reflective resin.
- the reflection frame 12 may be a metal cup. In this case, the bottom of the cup is removed so that the external connection electrode provided on the bottom surface of the LED die 16 can be utilized. Even with the reflective frame 12 made of a metal cup, the LED device 10 having a small size, good luminous efficiency, and narrowed light distribution can be obtained.
- the reflective frame 12 of the LED device 10 is made of the reflective resin.
- the reflective frame made of the reflective resin can be made thin, it can be further reduced in size.
- the reflection frame can be formed by groove formation, reflection resin filling, and reflection resin cutting, the manufacturing process is less than that of a cup-type reflection frame that requires mold molding. Simplify.
- the reason why the reflective frame 12 made of the reflective resin can be easily formed is that the LED device 10 does not have a submount substrate.
- the groove can be formed with a V-shaped blade from the bottom side at the last part of the assembly method, a desired slope can be easily formed inside the reflection frame 12.
- the LED device 10 was originally intended to be directly mounted on the mother board, the LED device 10 may be mounted on the submount substrate and then mounted on the mother substrate together with the submount substrate.
- the LED device 10 can be used as a flash light source of a camera, and is also effective for a directional lighting device or a lighting device capable of color matching.
- a plurality of LED devices 10 are applied to a lighting device that can be toned, since each LED device 10 is surrounded by a reflection frame, it is difficult for inadvertent light to enter the LED device from adjacent LED devices. For this reason, it is possible to avoid a phenomenon in which the LED device causes a color shift due to light emission of the adjacent LED device 10, and therefore, it is suitable for a light source of a lighting device capable of color matching.
- FIG. 5 is a cross-sectional view of another LED device 50.
- the LED device 50 shown in FIG. 5 is configured such that the fluorescent member 11 and the semiconductor layer 14 are not exposed on the bottom surface.
- the reflection frame 52 surrounds the outer peripheral portion and covers the bottom surface of the LED die 16 except for the area occupied by the external connection electrode 15.
- the reflection resin 35 that is the material of the reflection frame 52 is also added.
- the fluorescent member 51 exists inside the reflection frame 52 and covers the upper surface and side surfaces of the LED die 16.
- the inside of the reflection frame 52 is a slope like the reflection frame 12 of the LED device 10.
- the fluorescent member 51 and the reflective frame 52 are made of the same material as the fluorescent member 11 and the reflective frame 12 in the LED device 10.
- the difference between the LED device 50 shown in FIG. 5 and the LED device 10 shown in FIG. 2 is that the reflective resin 35 covers the fluorescent member 11 and the semiconductor layer 14 except for the external connection electrodes 15 at the bottom of the LED device 50. It ’s just that.
- the LED device 50 is filled with a large amount of the reflective resin 35 in the reflective resin filling step shown in FIG. 4B, and after the reflective resin 35 is cured, the upper surface side of the reflective resin 35 is polished to expose the external connection electrodes 15. Can be manufactured. If the reflective resin 35 exists at the bottom of the LED device 50, the semiconductor layer 14 can be protected from contamination at the bottom.
- the reflection resin 35 exists in the bottom part of the LED device 50, the light which is going to leak out from the peripheral part of the bottom part of the fluorescent member 51 and the semiconductor layer 14 at the bottom part can be shielded.
- the slope of the reflection frame 52 is in contact with the side surface of the fluorescent member 51, and the inner diameter of the reflection frame 51 (the distance between the left and right reflection frames 51) increases from the lower surface side to the upper surface side of the LED die 16. Has been.
- FIG. 6 is a cross-sectional view of yet another LED device 60.
- the fluorescent members 11 and 51 are provided between the side surface of the LED die 16 and the reflection frames 12 and 52.
- the LED device there may be no fluorescent member between the side surface of the LED die 16 and the reflection frame. Therefore, in the LED device 60 shown in FIG. 6, the side surface of the LED die 16 and the reflection frame 62 are in contact with each other.
- the reflection frame 62 surrounds the outer peripheral portion and also contacts the side surface of the LED die 16. At this time, the reflection frame 62 includes a flat portion along with the inclined surface on the inner side, and the flat portion covers the side surface of the LED die 16.
- the fluorescent member 61 exists inside the reflection frame 62 and covers the upper surface of the LED die 16.
- the fluorescent member 61 and the reflective frame 62 are made of the same material as the fluorescent members 11 and 51 and the reflective frames 12 and 52 in the LED devices 10 and 50 described above.
- the fluorescent member covering process shown in FIG. 3B is partially changed, and the LED die 16 is covered with the reflective resin and the fluorescent member.
- a reflective resin (the same material as that of the reflective resin 35) is filled between the LED dies 16 so as to cover the side surface of the LED die 16, and cured.
- the upper surface of the LED die 16 is covered with a fluorescent member (the same material as the fluorescent member 11a).
- the steps similar to those shown in FIGS. 3C to 4C are performed for groove formation, reflection resin filling, and separation.
- the emission efficiency of the LED device 60 is lower than that of the LED devices 10 and 50.
- the component directed to the side of the light emitted by the phosphor in the fluorescent member 61 is reflected by the inclined surface of the reflecting member 62 and travels upward, the light emission efficiency is improved as compared with the case where there is no inclined surface.
- the slope of the reflection frame 62 is in contact with the side surface of the fluorescent member 61, and the inner diameter of the reflection frame 61 (the distance between the left and right reflection frames 61) increases from the lower surface side to the upper surface side of the LED die 16. Has been.
- the LED device 60 completely covers the side surface of the LED die 16 with a reflective resin in the fluorescent member coating step corresponding to FIG. Therefore, no light leaks from the side surface of the LED die 16 even if the filling amount of the reflecting resin 35 is insufficient in the reflecting resin filling step corresponding to FIG. That is, in the LED device 60, it is possible to increase the tolerance of the filling amount of the reflecting resin in the reflecting resin filling step corresponding to FIG. 4B (allowing a margin in the appropriate amount range of the filling amount of the reflecting resin). There are features.
- FIG. 7 is a cross-sectional view of yet another LED device 70.
- the upper surface of the LED die 16 is covered with the fluorescent members 11, 51, 61. As described in the description of the fluorescent member coating step shown in FIG. 3B, these fluorescent members are covered with the fluorescent member 11, 51, 61 before curing the upper surface or the side surface of the LED die 16.
- the fluorescent members 11, 51 and 61 were cured.
- a phosphor sheet that has been previously cured (or semi-cured) may be used for covering the upper surface of the LED die 16. Therefore, in the LED device 70 shown in FIG. 7, the upper surface of the LED die 16 is covered with a phosphor sheet 73 (one fluorescent member).
- the reflection frame 72 surrounds the outer peripheral portion in the same manner as the LED device 10 shown in FIG.
- a phosphor sheet 73 is attached to the upper surface of the LED die 16, and the side surface of the phosphor sheet 73 is in contact with the inner slope of the reflection frame 72.
- a fluorescent member 71 (another fluorescent member) exists between the side surface of the LED die 16 and the reflection frame 72.
- the fluorescent member consists of two parts. As described in the explanation of FIG. 2, when the main purpose is to exhibit the function of improving the light emission efficiency, the fluorescent member 71 is replaced with a transparent material (translucent member). Also good.
- the slope of the reflection frame 72 is in contact with the side surface of the fluorescent member 71 and the side surface of the fluorescent sheet 73, and the inner diameter of the reflection frame 72 (the distance between the left and right reflection frames 72) from the lower surface side to the upper surface side of the LED die 16. ) Is spread.
- the fluorescent member 71 and the reflective frame 72 are made of the same material as the fluorescent members 11, 51, 61 and the reflective frames 12, 52, 62 in the LED devices 10, 50, 60 of the first, second, and third embodiments.
- the phosphor sheet 73 is obtained by kneading phosphor fine particles into phenyl silicone resin and processing it into a sheet shape, and has a thickness of about 100 to 300 ⁇ m. When it is desired to reduce loss due to concentration quenching, the phosphor sheet 73 may be set thicker.
- the LED device 70 has an effect that the manufacturing process is simplified and the manufacturing becomes easy. Furthermore, since the LED device 70 can manufacture the phosphor sheet 73 at low cost and easily adjust the wavelength conversion characteristics, a phosphor sheet group including a plurality of types of wavelength conversion characteristics is prepared, and the LED die 16 is prepared from these. An appropriate phosphor sheet 73 can be selected according to the light emission characteristics. As a result, the management of the emission color of the LED device 70 is facilitated.
- FIG. 8 and 9 are explanatory diagrams of the manufacturing process of the LED device 70.
- FIG. 8 and 9 are explanatory diagrams of the manufacturing process of the LED device 70.
- the entire manufacturing process is an application of a so-called assembly method.
- Various processes are performed on an assembly in which a large number of LED dies 16 are arranged on a large-sized phosphor sheet 83, and finally, individual LED devices are separated into individual pieces. 70 is obtained.
- Several hundred to several thousand LED dies 16 are attached to the large-sized phosphor sheet 83, but only two LED dies 16 are shown in FIGS.
- the large-format phosphor sheet 83 is obtained by obtaining a large number of phosphor sheets 73 by singulation.
- Each process shown in FIGS. 8 and 9 is limited to the processing of only one side of the large-sized phosphor sheet 83, and further uses gravity, so that it is shown upside down with respect to FIG.
- a large-format phosphor sheet 83 and an LED die 16 are prepared, and the sapphire substrate 13 of the LED die 16 is pasted on the large-format phosphor sheet 83 at a predetermined pitch.
- the LED dies 16 having light emission characteristics that match the wavelength conversion characteristics of the phosphor sheet 73 are selected so that a desired light emission color can be obtained (or large-format fluorescence to match the LED dies 16 having the same characteristics).
- An adhesive (not shown) is applied to the large phosphor sheet 83. The adhesive may be applied by printing the adhesive on the portion where the LED die 16 is attached. The adhesive may be applied to the sapphire substrate 13 of the LED die 16.
- the adhesive is once attached to the LED die 16 and then attached to the large-sized phosphor sheet 83.
- a support sheet 85 is attached to the lower surface of the large-sized phosphor sheet 83.
- the LED dies 16 may be arranged on the large-format phosphor sheet 83 one by one with a picker or the like. It is also possible to arrange a plurality of LED dies 16 on another pressure-sensitive adhesive sheet, and affix the plurality of LED dies 16 to the large-sized phosphor sheet 83 at once.
- the adhesive is cured by heating. The adhesive may be cured by temporary curing in which crosslinking is not complete.
- the gap between the LED dies 16 is filled with a fluorescent member 81 (other fluorescent member) different from the phosphor sheet 73 (one fluorescent member).
- the fluorescent member 81 is filled in the gap at the side of the LED die 16 and then heated to be cured. At this time, the outer periphery of the large-sized phosphor sheet 83 (not shown) is surrounded by a dam material (not shown), and the uncured fluorescent member 81 accurately measured by the dispenser is dropped.
- a V-shaped blade 33 is prepared as shown in FIG. 8 (c).
- the fluorescent member 81 and the phosphor sheet 83 between the LED dies 16 are cut out from the fluorescent member 81 side toward the large-sized firefly support sheet 85 with the V-shaped blade 33.
- a V-shaped groove 84 is formed.
- the V-shaped blade 33 is the same as the blade 33 shown in FIG.
- the groove 84 is filled with the reflective resin 82.
- the reflective resin 82 is obtained by kneading reflective fine particles in a silicone resin, and an appropriate amount is dropped by a dispenser and is uniformly filled using a capillary phenomenon.
- the reflective resin 35 is cured by heating.
- the bottom surface of the LED die 16 may be covered with a reflective resin 82 as in the LED device 50 shown in FIG.
- a large amount of the reflective resin 82 is filled, and after the reflective resin 82 is cured, the upper surface side of the reflective resin 82 is polished to expose the external connection electrodes 15.
- the semiconductor layer 14 can be protected from contamination at the bottom of the LED device 70, and light that is about to leak from the fluorescent member 71 and the periphery of the bottom of the semiconductor layer 14 can be shielded at the bottom.
- the reflective resin 82 is cut to obtain the individualized LED device 70.
- a dicer is used for cutting. Instead of the dicer, the reflective resin 82 may be cut using a wire. If the reflection resin 82 constituting the reflection frame 72 has a thickness of 30 to 50 ⁇ m at the time of completion, it can sufficiently shield light.
- the manufacturing process shown in FIGS. 8 and 9 is larger than the manufacturing process shown in FIGS. 3 and 4, which is a large-sized fluorescent sheet and a supporting sheet for arranging the LED dies 16.
- the phosphor sheet 83 is also used.
- the manufacturing process shown in FIGS. 8 and 9 is simplified compared to the manufacturing process shown in FIGS.
- the manufacturing process shown in FIGS. 8 and 9 if the wavelength conversion characteristics of the large-format phosphor sheet 83 and the light emission characteristics of the LED die 16 are adjusted in advance, the emission color of the LED device 70 can be easily managed. .
- FIG. 10 is a cross-sectional view of yet another LED device 90.
- the LED device 10 was provided with a reflection frame 12 having a slope from the top to the bottom.
- the LED device 60 shown in FIG. 6 includes a reflection frame 62 having an inclined surface only at the top. That is, in order to obtain a small LED device with good luminous efficiency while narrowing down the light distribution, it is preferable to provide a slope on a part of the reflection frame. Therefore, the LED device 90 shown in FIGS. 10 to 12 is configured to have a slope at the bottom of the reflection frame 92.
- the LED device 90 includes a reflection frame 92 that surrounds the outer peripheral portion, the LED die 16, and a fluorescent member 91 that converts the wavelength of light emitted from the LED die 16.
- the LED die 16 is the same as the LED die 16 shown in FIG. 2, and the materials of the reflective frame 92 and the fluorescent member 91 are the same as those of the reflective frame 12 and the fluorescent member 11 shown in FIG.
- the slope of the reflection frame 92 is in contact with the side surface of the fluorescent member 91, and the inner diameter of the reflection frame 92 (the distance between the left and right reflection frames 92) increases from the lower surface side to the upper surface side of the LED die 16. Has been.
- the cross-sectional shapes of the reflective frame 92 of the LED device 90 and the reflective frame 12 of the LED device 10 are different.
- the inner surface of the reflection frame 92 of the LED device 90 has a surface perpendicular to the bottom surface of the LED die 16 at the top and a slope at the bottom. This inclined surface reflects the blue light emitted from the side surface of the sapphire substrate 13 and travels upward. Part of the blue light is directed upward while being wavelength-converted, and is emitted from the upper surface of the LED device 90.
- 11 and 12 are explanatory diagrams of the manufacturing process of the LED device 90.
- the arranging process of arranging the LED dies 16 on the support sheet and the fluorescent member covering process of covering the upper surface and the side surface of the LED die 16 with the fluorescent member 11 a are the manufacturing processes of the LED device 10. Since it is the same as shown in FIG. 3A and FIG. 3B, it is omitted.
- another support sheet is attached to the upper surface of the fluorescent member 11a, which is the first stage of the groove forming process, the previous support sheet is peeled off, and the upper and lower sides of the assembly in which the many LED dies 16 are connected by the fluorescent member 11a.
- the step of inverting is the same as that shown in FIG. 3C and FIG.
- the LED device 90 groove forming process will be described with reference to FIGS. 11 (a) to 12 (a).
- a flat blade 93 is prepared as shown in FIG.
- FIG. 11B the space between the LED dies 16 is cut from the bottom surface side of the LED die 16 with a blade 93 to form a groove 94 having a rectangular cross section in the fluorescent member 11a.
- FIG. 11C a blade 95 having a V-shaped tip is prepared.
- FIG. 12A a slope is formed on the bottom (upper side in the drawing) of the groove 94 by the blade 95 to obtain the groove 96.
- the groove 96 is filled with the reflective resin 97.
- the reflective resin 97 is obtained by kneading reflective fine particles such as titanium oxide and alumina in a silicone resin. An appropriate amount is dropped with a dispenser in the same manner as in FIG. 4B, and uniformly filled using a capillary phenomenon. When filling is completed, the reflective resin 97 is cured by heating.
- the reflective resin 97 is cut in the same manner as in FIG. 4C, and the individualized LED device 90 is obtained.
- a dicer is used for cutting. Instead of the dicer, the reflective resin 97 may be cut using a wire. If the reflective resin 97 constituting the reflective frame 92 has a thickness of 30 to 50 ⁇ m at the time of completion, it can sufficiently shield light.
- the groove 94 may be formed by a wire or a mold instead of the blade 93.
- the bottom surface of the LED die 16 in the LED device 90 may be covered with a reflective resin 97.
- a part of the fluorescent member 91 of the LED device 90 may be replaced with a phosphor sheet.
- an assembly in which a large number of LED dies 16 are arranged may be prepared in the manufacturing process shown in FIG. 8, and then the manufacturing process shown in FIGS. 11 and 12 may be applied.
Abstract
Description
11、11a、51、61、71、81、91 蛍光部材
12、52、62、72、92 反射枠
13 サファイヤ基板(透明絶縁基板)
14 半導体層
15 外部接続電極
16 LEDダイ
31、32a、85 支持シート
33、93、95 ブレード
35、82、97 反射樹脂
34、84、94、96 溝
73 蛍光体シート
83 大判蛍光体シート
Claims (11)
- LED装置であって、
前記LED装置の外周部を囲う反射枠と、
透明絶縁基板、当該透明絶縁基板の下面側に形成された半導体層、及び当該半導体層上に配置された外部接続電極を有するLEDダイと、
前記LEDダイの少なくとも上面側に配置され、且つ前記LEDダイからの発光を波長変換する蛍光部材と、を有し、
前記反射枠の内側には、前記蛍光部材の側面と接触する斜面を有し、
前記斜面は、前記LEDダイの下面側から上面側に向かって、前記反射枠の内径が広がるように形成されている、
ことを特徴とするLED装置。 - 前記LEDダイの下面側の底面と、前記斜面の前記LEDダイの下面側の最下部との位置が略同じであり、前記斜面と前記LEDダイの側面の間隙に前記蛍光部材が配置されている、請求項1に記載のLED装置。
- 前記LEDダイの下面側の底面と、前記斜面の前記LEDダイの下面側の最下部との位置が略同じであり、前記斜面と前記LEDダイの側面の間隙に前記蛍光部材とは異なる他の蛍光部材又は透光性部材が配置されている、請求項1に記載のLED装置。
- 前記蛍光部材が蛍光体シートであり、前記蛍光体シートが前記LEDダイの上面に接着されている、請求項1~3の何れか一項に記載のLED装置。
- 前記反射枠が反射樹脂から構成される、請求項1~4の何れか一項に記載のLED装置。
- 前記外部接続電極の占める領域を除き、前記LEDダイの下面側の底面が前記反射樹脂で被覆されている、請求項1~5の何れか一項に記載のLED装置。
- 前記反射枠の内側には、前記斜面及び平坦部を有し、前記平坦部は前記LEDダイの側面を被覆している、請求項1に記載のLED装置。
- 前記反射枠の内側の前記LEDダイの上面側には、前記LEDダイの下面側の底面に対して垂直な面を有し、
前記反射枠の内側の前記LEDダイの下面側には、前記斜面を有する、請求項1~6の何れか一項に記載のLED装置。 - 外周部を囲う反射枠とLEDダイと前記LEDダイの発光を波長変換する蛍光部材とを備えるLED装置の製造方法において、
第1の支持シート上に前記LEDダイの下面側に配置された外部接続電極側を下にして前記LEDダイを配列する配列工程と、
前記LEDダイの上面と側面を前記蛍光部材で被覆する蛍光部材被覆工程と、
前記蛍光部材の前記LEDダイの上面側の上面に第2の支持シートを貼りつけ、前記蛍光部材の底面側からV字形のブレードで前記LEDダイの間に溝を形成する溝形成工程と、
前記溝に反射樹脂を充填する反射樹脂充填工程と、
前記反射樹脂を切断し個片化した前記LED装置を得る個片化工程と、
を有することを特徴とするLED装置の製造方法。 - 前記溝形成工程において、先ず前記蛍光部材に断面が長方形の溝を形成し、次に前記蛍光部材の底面側から前記断面が長方形の溝の一部に前記V字形のブレードで斜面を形成し、前記底面側に斜面を有する溝を形成する、請求項9に記載のLED装置の製造方法。
- 外周部を囲う反射枠とLEDダイと前記LEDダイの発光を波長変換する蛍光部材とを備えるLED装置の製造方法において、
大判の蛍光体シート上に前記LEDダイの下面側に配置された外部接続電極側を上にして前記LEDダイを配列する配列工程と、
前記LEDダイの間隙に前記蛍光体シートとは異なる他の蛍光部材又は透光性部材を充填する透過光性部材充填工程と、
前記蛍光体シートとは異なる他の蛍光部材又は前記透光性部材側から前記蛍光体シートに向かってV字形のブレードで前記LEDダイの間に溝を形成する溝形成工程と、
前記溝に反射樹脂を充填する反射樹脂充填工程と、
前記反射樹脂を切断し個片化した前記LED装置を得る個片化工程と、
を有することを特徴とするLED装置の製造方法。
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US9490398B2 (en) | 2016-11-08 |
CN104854716A (zh) | 2015-08-19 |
US20150311405A1 (en) | 2015-10-29 |
JPWO2014091914A1 (ja) | 2017-01-05 |
JP5611492B1 (ja) | 2014-10-22 |
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