JP6099901B2 - 発光装置 - Google Patents
発光装置 Download PDFInfo
- Publication number
- JP6099901B2 JP6099901B2 JP2012183821A JP2012183821A JP6099901B2 JP 6099901 B2 JP6099901 B2 JP 6099901B2 JP 2012183821 A JP2012183821 A JP 2012183821A JP 2012183821 A JP2012183821 A JP 2012183821A JP 6099901 B2 JP6099901 B2 JP 6099901B2
- Authority
- JP
- Japan
- Prior art keywords
- light
- transparent plate
- light emitting
- wavelength conversion
- conversion layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000006243 chemical reaction Methods 0.000 claims description 37
- 239000000463 material Substances 0.000 claims description 24
- 239000000758 substrate Substances 0.000 claims description 23
- 239000002245 particle Substances 0.000 claims description 13
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 11
- 125000006850 spacer group Chemical group 0.000 claims description 9
- 238000000605 extraction Methods 0.000 description 9
- 230000000052 comparative effect Effects 0.000 description 7
- 238000009826 distribution Methods 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229920002050 silicone resin Polymers 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21S—NON-PORTABLE LIGHTING DEVICES; SYSTEMS THEREOF; VEHICLE LIGHTING DEVICES SPECIALLY ADAPTED FOR VEHICLE EXTERIORS
- F21S41/00—Illuminating devices specially adapted for vehicle exteriors, e.g. headlamps
- F21S41/10—Illuminating devices specially adapted for vehicle exteriors, e.g. headlamps characterised by the light source
- F21S41/14—Illuminating devices specially adapted for vehicle exteriors, e.g. headlamps characterised by the light source characterised by the type of light source
- F21S41/141—Light emitting diodes [LED]
- F21S41/143—Light emitting diodes [LED] the main emission direction of the LED being parallel to the optical axis of the illuminating device
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21S—NON-PORTABLE LIGHTING DEVICES; SYSTEMS THEREOF; VEHICLE LIGHTING DEVICES SPECIALLY ADAPTED FOR VEHICLE EXTERIORS
- F21S41/00—Illuminating devices specially adapted for vehicle exteriors, e.g. headlamps
- F21S41/10—Illuminating devices specially adapted for vehicle exteriors, e.g. headlamps characterised by the light source
- F21S41/14—Illuminating devices specially adapted for vehicle exteriors, e.g. headlamps characterised by the light source characterised by the type of light source
- F21S41/141—Light emitting diodes [LED]
- F21S41/151—Light emitting diodes [LED] arranged in one or more lines
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
- F21Y2103/00—Elongate light sources, e.g. fluorescent tubes
- F21Y2103/10—Elongate light sources, e.g. fluorescent tubes comprising a linear array of point-like light-generating elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
Description
2、2−1、2−2、2−3、2−4:発光素子
3:バンプ
4:波長変換層
4a:蛍光体粒子
4b:スペーサ
5、5’:透明板状部材
5a、5b:垂直側面
5’a、5’b:傾斜側面
6:枠体
7:反射材料層
Claims (4)
- 基板と、
該基板上に実装された複数の発光素子と、
該複数の発光素子上に波長変換層を介して搭載された透明板状部材と、
前記複数の発光素子、前記波長変換層及び前記透明板状部材の側面を覆う反射材料層と
を具備し、
前記透明板状部材の一方の長辺側の側面のみが前記基板の前記複数の発光素子側に傾斜し、前記側面の前記複数の発光素子側の端縁が前記側面の前記透明板状部材表面側の端縁よりも前記複数の発光素子側に位置している発光装置。 - さらに、前記複数の発光素子の周囲に設けられた枠体を具備し、
前記反射材料層は、前記複数の発光素子、前記波長変換層及び前記透明板状部材と、前記枠体との間に設けられている請求項1に記載の発光装置。 - 前記波長変換層は蛍光体粒子及びスペーサを含み、波長変換層の厚さは該スペーサの粒径によって決定される請求項1に記載の発光装置。
- 前記波長変換層の厚さは、前記透明板状部材が前記複数の発光素子に平行となるように、決定される請求項3に記載の発光装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012183821A JP6099901B2 (ja) | 2012-08-23 | 2012-08-23 | 発光装置 |
US13/974,843 US20140054621A1 (en) | 2012-08-23 | 2013-08-23 | Semiconductor light-emitting device including transparent plate with slanted side surface |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012183821A JP6099901B2 (ja) | 2012-08-23 | 2012-08-23 | 発光装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2014041942A JP2014041942A (ja) | 2014-03-06 |
JP6099901B2 true JP6099901B2 (ja) | 2017-03-22 |
Family
ID=50147218
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012183821A Active JP6099901B2 (ja) | 2012-08-23 | 2012-08-23 | 発光装置 |
Country Status (2)
Country | Link |
---|---|
US (1) | US20140054621A1 (ja) |
JP (1) | JP6099901B2 (ja) |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5611492B1 (ja) * | 2012-12-10 | 2014-10-22 | シチズンホールディングス株式会社 | Led装置及びその製造方法 |
US9590148B2 (en) * | 2014-03-18 | 2017-03-07 | GE Lighting Solutions, LLC | Encapsulant modification in heavily phosphor loaded LED packages for improved stability |
US10439111B2 (en) | 2014-05-14 | 2019-10-08 | Genesis Photonics Inc. | Light emitting device and manufacturing method thereof |
US9997676B2 (en) | 2014-05-14 | 2018-06-12 | Genesis Photonics Inc. | Light emitting device and manufacturing method thereof |
TWI557952B (zh) | 2014-06-12 | 2016-11-11 | 新世紀光電股份有限公司 | 發光元件 |
KR102288384B1 (ko) * | 2014-11-18 | 2021-08-11 | 서울반도체 주식회사 | 발광 장치 |
KR102346798B1 (ko) * | 2015-02-13 | 2022-01-05 | 삼성전자주식회사 | 반도체 발광장치 |
US9882096B2 (en) | 2015-03-18 | 2018-01-30 | Genesis Photonics Inc. | Light emitting diode structure and method for manufacturing the same |
TWI657597B (zh) | 2015-03-18 | 2019-04-21 | 新世紀光電股份有限公司 | 側照式發光二極體結構及其製造方法 |
JP6575828B2 (ja) * | 2015-07-22 | 2019-09-18 | パナソニックIpマネジメント株式会社 | 発光装置及び発光モジュール |
JP6217705B2 (ja) * | 2015-07-28 | 2017-10-25 | 日亜化学工業株式会社 | 発光装置及びその製造方法 |
KR102501878B1 (ko) * | 2015-08-13 | 2023-02-21 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | 발광소자 패키지 |
CN106549092A (zh) * | 2015-09-18 | 2017-03-29 | 新世纪光电股份有限公司 | 发光装置及其制造方法 |
US10230030B2 (en) | 2016-01-28 | 2019-03-12 | Maven Optronics Co., Ltd. | Light emitting device with asymmetrical radiation pattern and manufacturing method of the same |
CN107039572B (zh) * | 2016-02-03 | 2019-05-10 | 行家光电股份有限公司 | 具非对称性光形的发光装置及其制造方法 |
CN109196667B (zh) * | 2016-03-07 | 2022-02-25 | 世迈克琉明有限公司 | 半导体发光元件及其制造方法 |
DE102016112275B4 (de) | 2016-07-05 | 2022-10-06 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zum herstellen einer optoelektronischen leuchtvorrichtung und optoelektronische leuchtvorrichtung |
JP6934712B2 (ja) * | 2016-09-20 | 2021-09-15 | スタンレー電気株式会社 | 半導体発光装置及び車両用灯具 |
TWI651870B (zh) | 2016-10-19 | 2019-02-21 | 新世紀光電股份有限公司 | 發光裝置及其製造方法 |
KR102362004B1 (ko) * | 2017-03-24 | 2022-02-15 | 엘지이노텍 주식회사 | 반도체 소자 패키지 |
US10784423B2 (en) | 2017-11-05 | 2020-09-22 | Genesis Photonics Inc. | Light emitting device |
CN109755220B (zh) | 2017-11-05 | 2022-09-02 | 新世纪光电股份有限公司 | 发光装置及其制作方法 |
JP7133973B2 (ja) * | 2018-05-10 | 2022-09-09 | スタンレー電気株式会社 | 半導体発光装置 |
KR20190134941A (ko) * | 2018-05-24 | 2019-12-05 | 서울반도체 주식회사 | 발광 소자 |
Family Cites Families (13)
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US3780357A (en) * | 1973-02-16 | 1973-12-18 | Hewlett Packard Co | Electroluminescent semiconductor display apparatus and method of fabricating the same |
WO2006101174A1 (ja) * | 2005-03-24 | 2006-09-28 | Kyocera Corporation | 発光素子収納用パッケージおよび発光装置ならびに照明装置 |
JP2008205229A (ja) * | 2007-02-21 | 2008-09-04 | Matsushita Electric Ind Co Ltd | 半導体発光素子、半導体発光装置および製造方法 |
EP2216834B1 (en) * | 2007-11-29 | 2017-03-15 | Nichia Corporation | Light-emitting apparatus |
KR100924912B1 (ko) * | 2008-07-29 | 2009-11-03 | 서울반도체 주식회사 | 웜화이트 발광장치 및 그것을 포함하는 백라이트 모듈 |
WO2010017831A1 (de) * | 2008-08-11 | 2010-02-18 | Osram Gesellschaft mit beschränkter Haftung | Konversions led |
WO2010044240A1 (ja) * | 2008-10-15 | 2010-04-22 | 株式会社小糸製作所 | 発光モジュール、発光モジュールの製造方法、および灯具ユニット |
WO2010061592A1 (ja) * | 2008-11-28 | 2010-06-03 | 株式会社小糸製作所 | 発光モジュール、発光モジュールの製造方法、および灯具ユニット |
KR20100080423A (ko) * | 2008-12-30 | 2010-07-08 | 삼성엘이디 주식회사 | 발광소자 패키지 및 그 제조방법 |
EP2378576A2 (en) * | 2010-04-15 | 2011-10-19 | Samsung LED Co., Ltd. | Light emitting diode package, lighting apparatus having the same, and method for manufacturing light emitting diode package |
JP2012019062A (ja) * | 2010-07-08 | 2012-01-26 | Shin Etsu Chem Co Ltd | 発光半導体装置、実装基板及びそれらの製造方法 |
JP2012033823A (ja) * | 2010-08-02 | 2012-02-16 | Stanley Electric Co Ltd | 発光装置およびその製造方法 |
JP5553741B2 (ja) * | 2010-12-22 | 2014-07-16 | スタンレー電気株式会社 | 発光装置およびその製造方法 |
-
2012
- 2012-08-23 JP JP2012183821A patent/JP6099901B2/ja active Active
-
2013
- 2013-08-23 US US13/974,843 patent/US20140054621A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
US20140054621A1 (en) | 2014-02-27 |
JP2014041942A (ja) | 2014-03-06 |
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