JP5883662B2 - 発光装置 - Google Patents
発光装置 Download PDFInfo
- Publication number
- JP5883662B2 JP5883662B2 JP2012013760A JP2012013760A JP5883662B2 JP 5883662 B2 JP5883662 B2 JP 5883662B2 JP 2012013760 A JP2012013760 A JP 2012013760A JP 2012013760 A JP2012013760 A JP 2012013760A JP 5883662 B2 JP5883662 B2 JP 5883662B2
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- light
- wavelength conversion
- emitting element
- conversion layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000006243 chemical reaction Methods 0.000 claims description 67
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 31
- 239000002245 particle Substances 0.000 claims description 29
- 239000000758 substrate Substances 0.000 claims description 18
- 125000006850 spacer group Chemical group 0.000 claims description 10
- 230000000052 comparative effect Effects 0.000 description 18
- 239000000463 material Substances 0.000 description 18
- 230000003287 optical effect Effects 0.000 description 9
- 229920005989 resin Polymers 0.000 description 8
- 239000011347 resin Substances 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 230000002093 peripheral effect Effects 0.000 description 6
- 239000011521 glass Substances 0.000 description 5
- 238000005286 illumination Methods 0.000 description 5
- 238000002156 mixing Methods 0.000 description 5
- 229920002050 silicone resin Polymers 0.000 description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 3
- 239000011230 binding agent Substances 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 238000004382 potting Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000011324 bead Substances 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 239000005331 crown glasses (windows) Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 229910000484 niobium oxide Inorganic materials 0.000 description 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 239000012463 white pigment Substances 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
Description
11a 基板
11b 枠体
12 発光素子
13 バンプ
14 波長変換層
15 透明板状部材
16 スペーサー
17 反射層
140 凸部
170 反射材料
Claims (5)
- 基板と、
前記基板上に配置された発光素子、前記発光素子上に配置されて蛍光体粒子を含有する波長変換層、及び前記波長変換層上に配置された透光性プレートからなる発光構造体と、を備える発光装置であって、
前記波長変換層は、前記発光素子の側面の少なくとも一部と前記透光性プレートの側面の少なくとも一部とを覆って外側に湾曲に突出した凸部を含み、
前記発光装置は、前記凸部の湾曲面を覆う反射層を備えることを特徴とする発光装置。 - 前記発光構造体を囲むように前記基板上に配置された環状の枠体を更に備え、
前記反射層は、前記発光構造体と前記枠体との間を埋めるように形成されていることを特徴とする請求項1記載の発光装置。 - 前記透光性プレートの前記波長変換層に面した裏面の大きさは前記発光素子の前記波長変換層に面した発光主面の大きさより小さいことを特徴とする請求項1又は2記載の発光装置。
- 前記凸部は、前記発光素子の側面全体を覆っていることを特徴とする請求項1〜3のいずれか1記載の発光装置。
- 前記波長変換層には粒子状の複数のスペーサーが混入され、前記複数のスペーサーによって前記波長変換層は所定の膜厚で形成されていることを特徴とする請求項1〜4のいずれか1記載の発光装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012013760A JP5883662B2 (ja) | 2012-01-26 | 2012-01-26 | 発光装置 |
US13/748,099 US9224925B2 (en) | 2012-01-26 | 2013-01-23 | Semiconductor light-emitting device and manufacturing method |
EP13000374.2A EP2620989B1 (en) | 2012-01-26 | 2013-01-25 | Semiconductor light-emitting device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012013760A JP5883662B2 (ja) | 2012-01-26 | 2012-01-26 | 発光装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2013153094A JP2013153094A (ja) | 2013-08-08 |
JP5883662B2 true JP5883662B2 (ja) | 2016-03-15 |
Family
ID=47750388
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012013760A Active JP5883662B2 (ja) | 2012-01-26 | 2012-01-26 | 発光装置 |
Country Status (3)
Country | Link |
---|---|
US (1) | US9224925B2 (ja) |
EP (1) | EP2620989B1 (ja) |
JP (1) | JP5883662B2 (ja) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
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JP6149487B2 (ja) | 2012-11-09 | 2017-06-21 | 日亜化学工業株式会社 | 発光装置の製造方法および発光装置 |
JP2014138046A (ja) | 2013-01-16 | 2014-07-28 | Stanley Electric Co Ltd | 半導体発光素子パッケージ固定構造 |
JP6107475B2 (ja) * | 2013-06-28 | 2017-04-05 | 日亜化学工業株式会社 | 発光装置 |
JP6477001B2 (ja) * | 2014-03-14 | 2019-03-06 | 日亜化学工業株式会社 | 発光装置及び発光装置の製造方法 |
US9590148B2 (en) * | 2014-03-18 | 2017-03-07 | GE Lighting Solutions, LLC | Encapsulant modification in heavily phosphor loaded LED packages for improved stability |
EP3130011A4 (en) * | 2014-04-07 | 2018-02-28 | Crystal Is, Inc. | Ultraviolet light-emitting devices and methods |
JP6484982B2 (ja) * | 2014-09-30 | 2019-03-20 | 日亜化学工業株式会社 | 発光装置の製造方法 |
KR102346798B1 (ko) | 2015-02-13 | 2022-01-05 | 삼성전자주식회사 | 반도체 발광장치 |
DE102016208489A1 (de) * | 2016-05-18 | 2017-11-23 | Osram Opto Semiconductors Gmbh | Verfahren zur herstellung eines optoelektronischen bauteils und optoelektronisches bauteil |
JP6947997B2 (ja) * | 2016-08-01 | 2021-10-13 | 日亜化学工業株式会社 | 発光装置 |
JP6724639B2 (ja) | 2016-08-01 | 2020-07-15 | 日亜化学工業株式会社 | 発光装置 |
US10014450B1 (en) * | 2017-02-09 | 2018-07-03 | Asm Technology Singapore Pte Ltd | Method for manufacturing a light emitting diode device and the light emitting diode device so manufactured |
JP7014948B2 (ja) * | 2017-06-13 | 2022-02-02 | 日亜化学工業株式会社 | 発光装置の製造方法および発光装置 |
US10600937B1 (en) | 2018-09-17 | 2020-03-24 | Lumileds Holding B.V. | Precise bondline control between LED components |
KR102477355B1 (ko) * | 2018-10-23 | 2022-12-15 | 삼성전자주식회사 | 캐리어 기판 및 이를 이용한 기판 처리 장치 |
WO2020197158A1 (ko) * | 2019-03-22 | 2020-10-01 | 엘지이노텍 주식회사 | 조명 모듈 및 이를 구비한 조명 장치 |
JP7269792B2 (ja) * | 2019-05-16 | 2023-05-09 | スタンレー電気株式会社 | 発光装置 |
CN114883473A (zh) * | 2020-01-02 | 2022-08-09 | 厦门市三安光电科技有限公司 | 发光装置及发光设备 |
JP2023140834A (ja) * | 2022-03-23 | 2023-10-05 | スタンレー電気株式会社 | 発光装置及び発光装置の製造方法 |
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JP4694427B2 (ja) | 2006-07-05 | 2011-06-08 | 株式会社小糸製作所 | 車両用前照灯 |
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-
2012
- 2012-01-26 JP JP2012013760A patent/JP5883662B2/ja active Active
-
2013
- 2013-01-23 US US13/748,099 patent/US9224925B2/en active Active
- 2013-01-25 EP EP13000374.2A patent/EP2620989B1/en active Active
Also Published As
Publication number | Publication date |
---|---|
US9224925B2 (en) | 2015-12-29 |
EP2620989A2 (en) | 2013-07-31 |
EP2620989B1 (en) | 2018-07-25 |
US20130193458A1 (en) | 2013-08-01 |
JP2013153094A (ja) | 2013-08-08 |
EP2620989A3 (en) | 2015-08-05 |
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