JP5736203B2 - 発光装置 - Google Patents
発光装置 Download PDFInfo
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- JP5736203B2 JP5736203B2 JP2011062983A JP2011062983A JP5736203B2 JP 5736203 B2 JP5736203 B2 JP 5736203B2 JP 2011062983 A JP2011062983 A JP 2011062983A JP 2011062983 A JP2011062983 A JP 2011062983A JP 5736203 B2 JP5736203 B2 JP 5736203B2
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- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 135
- 239000000758 substrate Substances 0.000 claims description 80
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- 238000007789 sealing Methods 0.000 claims description 10
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- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
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- 239000004593 Epoxy Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
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- 238000011156 evaluation Methods 0.000 description 1
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- 238000007517 polishing process Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
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- 229910052710 silicon Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
Description
図1に、第1の実施形態の発光装置を示す。図1(a)は上面図、図1(b)、(c)は、それぞれA−A断面図、B−B断面図である。なお、図の理解を容易にするために図1(a)の上面図にもハッチングを付している。
次に、本実施形態の発光装置の製造方法について説明する。
第2の実施形態の発光装置を図5(a),(b),(c)を用いて説明する。図5(a)は、第2の実施形態の発光装置の上面図、図5(b)はC−C断面図、図5(c)はD−D断面図である。
第3の実施形態の発光装置を図6(a)を用いて説明する。
第4の実施形態の発光装置を図7(a),(b)を用いて説明する。図7(a)は上面図、図7(b)はE−E断面図であるが、図の理解を容易にするために図7(a)においてもハッチングを付している。
第1から第4の実施形態では、LED素子が実装基板に一つのみ搭載された発光装置について説明してきたが、図8および図9のように第1の実施形態の複数のLED素子11を配列して実装基板10に搭載し、全体で一つの大きな透明部材18を配置した構成にすることも可能である。図8(a)は上面図、図8(b)および(c)はそれぞれF−F断面図、G−G断面図である。図9(a)は上面図、図9(b)および(c)はそれぞれH−H断面図、I−I断面図である。
Claims (8)
- 実装基板と、前記実装基板に搭載された発光素子と、前記発光素子上に配置された蛍光体含有樹脂層と、前記蛍光体含有樹脂層の上に搭載された透光性の板状部材とを有し、
前記発光素子は、半導体をエピタキシャル成長させた発光層を含む発光構造層と、該発光構造層を支持する支持基板とを含み、前記発光構造層の上面形状は、前記支持基板の上面形状より小さく、
前記板状部材の大きさは、前記発光構造層の大きさと同等以下であり、前記蛍光体含有樹脂層は、前記板状部材の端部から前記支持基板の端部を接続する傾斜した端面を備え、
前記蛍光体含有樹脂層は、前記発光構造層の側面および前記支持基板上面の一部を被覆し、前記支持基板の側面を覆わないことを特徴とする発光装置。 - 請求項1に記載の発光装置において、前記発光構造層の端部の直上における蛍光体含有樹脂層の膜厚は、前記蛍光体含有樹脂層に含有される蛍光体粒子の粒径よりも大きいことを特徴とする発光装置。
- 請求項1または2に記載の発光装置において、前記蛍光体含有樹脂層の端面は、前記支持基板の法線との成す角が、60度以内であることを特徴とする発光装置。
- 請求項1ないし3のいずれか1項に記載の発光装置において、前記板状部材の一辺の大きさは、前記発光構造層の対応する一辺の大きさとの差が50μm以内であることを特徴とする発光装置。
- 請求項1ないし4のいずれか1項に記載の発光装置において、前記発光構造層の上面には電極が配置され、該電極は、ボンディングワイヤにより前記実装基板上の実装電極パターンと接続され、
前記電極上には、前記電極と前記ボンディングワイヤとの接続部を封止する封止樹脂が配置されていることを特徴とする発光装置。 - 請求項1ないし5のいずれか1項に記載の発光装置において、前記蛍光体含有樹脂層の端面および前記板状部材の端面に対して所定の間隙をあけて対向する光反射性樹脂層を配置したこと特徴とする発光装置。
- 請求項6に記載の発光装置において、前記間隙は、前記発光素子の発する光に対して透明な透明材料により充填されていることを特徴とする発光装置。
- 実装基板と、前記実装基板に搭載された複数の発光素子と、前記発光素子上に配置された蛍光体含有樹脂層と、前記複数の発光素子の全体を覆うように前記蛍光体含有樹脂層の上に搭載された一つの透光性の板状部材とを有し、
前記発光素子は、半導体をエピタキシャル成長させた層を含む発光構造層と、該発光構造層を支持する支持基板とを含み、前記発光構造層の上面形状は、前記支持基板の上面形状より小さく、
前記板状部材の端面は、前記発光構造層の端面の直上、もしくは、発光構造層の端面よりも内側に位置し、前記蛍光体含有樹脂層は、前記板状部材の端部から前記支持基板の端部を接続する傾斜した端面を備え、
前記蛍光体含有樹脂層は、前記発光構造層の側面および前記支持基板上面の一部を被覆し、前記支持基板の側面を被覆しないことを特徴とする発光装置。
Priority Applications (2)
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JP2011062983A JP5736203B2 (ja) | 2011-03-22 | 2011-03-22 | 発光装置 |
US13/427,849 US8508118B2 (en) | 2011-03-22 | 2012-03-22 | Light emitting device that suppresses color unevenness |
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JP2011062983A JP5736203B2 (ja) | 2011-03-22 | 2011-03-22 | 発光装置 |
Publications (2)
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JP2012199411A JP2012199411A (ja) | 2012-10-18 |
JP5736203B2 true JP5736203B2 (ja) | 2015-06-17 |
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JP (1) | JP5736203B2 (ja) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2013110199A (ja) * | 2011-11-18 | 2013-06-06 | Citizen Electronics Co Ltd | Led発光装置 |
JP6215525B2 (ja) * | 2012-10-23 | 2017-10-18 | スタンレー電気株式会社 | 半導体発光装置 |
JPWO2014081042A1 (ja) * | 2012-11-26 | 2017-01-05 | シチズン電子株式会社 | 発光装置 |
US9252321B2 (en) | 2013-04-22 | 2016-02-02 | Empire Technology Development Llc | Opto-mechanical alignment |
EP3022777B1 (en) | 2013-07-18 | 2021-03-24 | Lumileds LLC | Light emitting device with glass plate |
JP6244784B2 (ja) | 2013-09-30 | 2017-12-13 | 日亜化学工業株式会社 | 発光装置 |
JP6282438B2 (ja) * | 2013-10-18 | 2018-02-21 | スタンレー電気株式会社 | 半導体発光装置 |
JP6477001B2 (ja) | 2014-03-14 | 2019-03-06 | 日亜化学工業株式会社 | 発光装置及び発光装置の製造方法 |
US20150325748A1 (en) | 2014-05-07 | 2015-11-12 | Genesis Photonics Inc. | Light emitting device |
TWI641285B (zh) | 2014-07-14 | 2018-11-11 | 新世紀光電股份有限公司 | 發光模組與發光單元的製作方法 |
CN105280795A (zh) * | 2014-07-25 | 2016-01-27 | 新世纪光电股份有限公司 | 发光单元与发光模块 |
CN105322058A (zh) * | 2014-07-25 | 2016-02-10 | 新世纪光电股份有限公司 | 发光单元的制作方法 |
US9601668B2 (en) | 2014-10-28 | 2017-03-21 | Nichia Corporation | Light emitting device |
KR102605585B1 (ko) * | 2016-08-11 | 2023-11-24 | 삼성전자주식회사 | 발광소자 패키지 제조방법 |
JP6520996B2 (ja) * | 2016-11-01 | 2019-05-29 | 日亜化学工業株式会社 | 発光装置及びその製造方法 |
DE102017125413A1 (de) | 2016-11-01 | 2018-05-03 | Nichia Corporation | Lichtemitierende Vorrichtung und Verfahren zu deren Herstellung |
JP7083647B2 (ja) * | 2018-01-16 | 2022-06-13 | スタンレー電気株式会社 | 発光装置 |
JP7269792B2 (ja) * | 2019-05-16 | 2023-05-09 | スタンレー電気株式会社 | 発光装置 |
JP7288343B2 (ja) * | 2019-05-16 | 2023-06-07 | スタンレー電気株式会社 | 発光装置 |
CN112443818B (zh) * | 2019-08-30 | 2023-04-28 | 深圳市中光工业技术研究院 | 光源系统及照明装置 |
JP7060810B2 (ja) | 2019-11-19 | 2022-04-27 | 日亜化学工業株式会社 | 発光装置および発光装置の製造方法 |
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JP3844196B2 (ja) * | 2001-06-12 | 2006-11-08 | シチズン電子株式会社 | 発光ダイオードの製造方法 |
WO2006035388A2 (en) * | 2004-09-30 | 2006-04-06 | Koninklijke Philips Electronics N.V. | Phosphor-converted led with luminance enhancement through light recycling |
US8969908B2 (en) * | 2006-04-04 | 2015-03-03 | Cree, Inc. | Uniform emission LED package |
DE102007025092A1 (de) * | 2007-05-30 | 2008-12-04 | Osram Opto Semiconductors Gmbh | Lumineszenzdiodenchip |
JP5278023B2 (ja) | 2009-02-18 | 2013-09-04 | 日亜化学工業株式会社 | 発光装置の製造方法 |
JP5421751B2 (ja) * | 2009-12-03 | 2014-02-19 | スタンレー電気株式会社 | 半導体発光装置 |
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2012
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US8508118B2 (en) | 2013-08-13 |
JP2012199411A (ja) | 2012-10-18 |
US20120242216A1 (en) | 2012-09-27 |
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