JP7083647B2 - 発光装置 - Google Patents
発光装置 Download PDFInfo
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- JP7083647B2 JP7083647B2 JP2018005085A JP2018005085A JP7083647B2 JP 7083647 B2 JP7083647 B2 JP 7083647B2 JP 2018005085 A JP2018005085 A JP 2018005085A JP 2018005085 A JP2018005085 A JP 2018005085A JP 7083647 B2 JP7083647 B2 JP 7083647B2
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- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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Description
11 基板
20 発光素子
30、30A~30D、50 波長変換層
40、40A、40B 透光板
60、60A、60B 個別透光板
70、70A~70F 共通透光板
Claims (10)
- 基板と、
前記基板上に整列して配列された複数の発光素子と、
各々が、前記複数の発光素子の各々上に透光性の接着剤を介して配置され、前記発光素子側の底面と前記底面よりも小さい上面とを有し、前記底面から前記上面に向かうに従って前記発光素子の配列方向に垂直な方向の幅が小さくなる側面形状を有する複数の波長変換層と、
前記複数の波長変換層の前記上面上に跨って配置された透光板と、
前記複数の発光素子の各々の側面、前記複数の波長変換層の外縁部をなす側面及び前記透光板の側面を覆う反射樹脂と、を有し、
前記複数の波長変換層の各々における隣接する他の前記波長変換層に面する側面の各々は、前記基板に垂直な方向に延びていることを特徴とする発光装置。 - 前記複数の波長変換層の外縁部をなす前記側面の少なくとも1つは、前記基板に垂直な方向から前記複数の波長変換層の内側に向かって傾斜する傾斜部を有することを特徴とする請求項1に記載の発光装置。
- 前記複数の波長変換層の前記外縁部をなす前記側面のうち、前記配列方向に沿って延びる側面の各々は、前記傾斜部を有することを特徴とする請求項2に記載の発光装置。
- 前記透光板は、透光性の接着剤を介して前記複数の波長変換層上に配置され、
前記接着剤は、前記複数の波長変換層の各々における隣接する他の前記波長変換層との間の領域を充填していることを特徴とする請求項1乃至3のいずれか1つに記載の発光装置。 - 基板と、
前記基板上に整列して配列された複数の発光素子と、
各々が前記複数の発光素子の各々上に透光性の接着剤を介して配置された複数の波長変換層と、
各々が、前記複数の波長変換層の各々上に配置され、前記波長変換層側の底面と前記底面よりも小さな上面とを有し、前記底面から前記上面に向かうに従って前記波長変換層の配列方向に垂直な方向の幅が小さくなる側面形状を有する複数の個別透光板と、
前記複数の個別透光板の前記上面上に跨って配置された共通透光板と、
前記複数の発光素子の各々の側面、前記複数の波長変換層の各々の側面、前記複数の個別透光板の外縁部をなす側面及び前記共通透光板の側面を覆う反射樹脂と、を有し、
前記複数の個別透光板の各々における隣接する他の前記個別透光板に面する側面の各々は、前記基板に垂直な方向に延びていることを特徴とする発光装置。 - 前記複数の個別透光板の外縁部をなす前記側面の少なくとも1つは、前記基板に垂直な方向から前記複数の個別透光板の内側に向かって傾斜する傾斜部を有することを特徴とする請求項5に記載の発光装置。
- 前記複数の個別透光板の前記外縁部をなす前記側面のうち、前記配列方向に沿って延びる側面の各々は、前記傾斜部を有することを特徴とする請求項6に記載の発光装置。
- 前記共通透光板は、透光性の接着剤を介して前記複数の個別透光板上に配置され、
前記接着剤は、前記複数の個別透光板の各々における隣接する他の前記個別透光板との間の領域を充填していることを特徴とする請求項5乃至7のいずれか1つに記載の発光装置。 - 前記複数の波長変換層の各々は、均一な層厚を有し、
前記複数の波長変換層の各々の側面は、前記基板に垂直な方向に延びていることを特徴とする請求項5乃至8のいずれか1つに記載の発光装置。 - 前記共通透光板は、透光性の接着剤を介して前記複数の個別透光板上に配置され、かつ前記配列方向において前記複数の個別透光板全体の端部間の距離よりも小さな長さを有し、
前記共通透光板と前記複数の個別透光板とを接着する前記接着剤は、前記複数の個別透光板の前記上面上から、前記配列方向における前記共通透光板の端部側面上に亘って設けられていることを特徴とする請求項5乃至9のいずれか1つに記載の発光装置。
Priority Applications (4)
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JP2018005085A JP7083647B2 (ja) | 2018-01-16 | 2018-01-16 | 発光装置 |
EP19151930.5A EP3511981B1 (en) | 2018-01-16 | 2019-01-15 | High light extraction efficiency, wavelength-converted devices |
CN201910034676.5A CN110047989B (zh) | 2018-01-16 | 2019-01-15 | 发光装置 |
US16/248,820 US10937770B2 (en) | 2018-01-16 | 2019-01-16 | Light-emitting device |
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JP2018005085A JP7083647B2 (ja) | 2018-01-16 | 2018-01-16 | 発光装置 |
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JP2019125690A JP2019125690A (ja) | 2019-07-25 |
JP2019125690A5 JP2019125690A5 (ja) | 2021-01-28 |
JP7083647B2 true JP7083647B2 (ja) | 2022-06-13 |
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EP (1) | EP3511981B1 (ja) |
JP (1) | JP7083647B2 (ja) |
CN (1) | CN110047989B (ja) |
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DE102019104978B4 (de) * | 2019-02-27 | 2024-03-14 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Bauteil mit homogenisierter leuchtfläche |
WO2020182313A1 (en) * | 2019-03-14 | 2020-09-17 | Osram Opto Semiconductors Gmbh | Optoelectronic semiconductor component and method for producing an optoelectronic semiconductor component |
EP3905316B1 (en) * | 2019-11-14 | 2023-08-30 | Nuvoton Technology Corporation Japan | Light-emitting device |
JP6793899B1 (ja) | 2019-11-14 | 2020-12-02 | ヌヴォトンテクノロジージャパン株式会社 | 発光装置 |
JP7108196B2 (ja) * | 2019-12-26 | 2022-07-28 | 日亜化学工業株式会社 | 発光装置、波長変換部材の製造方法及び発光装置の製造方法 |
JP7328568B2 (ja) | 2021-06-30 | 2023-08-17 | 日亜化学工業株式会社 | 光源、光源装置及び光源の製造方法 |
EP4310912A1 (en) * | 2022-07-21 | 2024-01-24 | Nichia Corporation | Light-emitting device |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012169442A (ja) | 2011-02-14 | 2012-09-06 | Stanley Electric Co Ltd | 発光装置およびその製造方法 |
JP2017059756A (ja) | 2015-09-18 | 2017-03-23 | シチズン時計株式会社 | 発光装置 |
JP2017157610A (ja) | 2016-02-29 | 2017-09-07 | 日亜化学工業株式会社 | 発光装置 |
US20170365746A1 (en) | 2014-12-08 | 2017-12-21 | Koninklijke Philips N.V. | Wavelength converted semiconductor light emitting device |
JP2018006490A (ja) | 2016-06-30 | 2018-01-11 | 日亜化学工業株式会社 | シート成形体の製造方法、及びそれを用いた発光装置の製造方法 |
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DE102009005907A1 (de) * | 2009-01-23 | 2010-07-29 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauteil |
JP5736203B2 (ja) * | 2011-03-22 | 2015-06-17 | スタンレー電気株式会社 | 発光装置 |
JP2013243344A (ja) * | 2012-04-23 | 2013-12-05 | Nichia Chem Ind Ltd | 発光装置 |
JP2015026753A (ja) * | 2013-07-29 | 2015-02-05 | スタンレー電気株式会社 | 半導体発光装置及びその製造方法 |
JP6164038B2 (ja) * | 2013-10-16 | 2017-07-19 | 豊田合成株式会社 | 発光装置 |
JP6187277B2 (ja) | 2014-01-21 | 2017-08-30 | 豊田合成株式会社 | 発光装置及びその製造方法 |
JP6477001B2 (ja) * | 2014-03-14 | 2019-03-06 | 日亜化学工業株式会社 | 発光装置及び発光装置の製造方法 |
EP3174110B1 (en) * | 2015-11-30 | 2020-12-23 | Nichia Corporation | Light emitting device |
JP2017228600A (ja) * | 2016-06-21 | 2017-12-28 | スタンレー電気株式会社 | 半導体発光装置 |
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- 2018-01-16 JP JP2018005085A patent/JP7083647B2/ja active Active
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- 2019-01-15 CN CN201910034676.5A patent/CN110047989B/zh active Active
- 2019-01-15 EP EP19151930.5A patent/EP3511981B1/en active Active
- 2019-01-16 US US16/248,820 patent/US10937770B2/en active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012169442A (ja) | 2011-02-14 | 2012-09-06 | Stanley Electric Co Ltd | 発光装置およびその製造方法 |
US20170365746A1 (en) | 2014-12-08 | 2017-12-21 | Koninklijke Philips N.V. | Wavelength converted semiconductor light emitting device |
JP2017059756A (ja) | 2015-09-18 | 2017-03-23 | シチズン時計株式会社 | 発光装置 |
JP2017157610A (ja) | 2016-02-29 | 2017-09-07 | 日亜化学工業株式会社 | 発光装置 |
JP2018006490A (ja) | 2016-06-30 | 2018-01-11 | 日亜化学工業株式会社 | シート成形体の製造方法、及びそれを用いた発光装置の製造方法 |
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Publication number | Publication date |
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US10937770B2 (en) | 2021-03-02 |
EP3511981A1 (en) | 2019-07-17 |
CN110047989B (zh) | 2024-05-28 |
CN110047989A (zh) | 2019-07-23 |
JP2019125690A (ja) | 2019-07-25 |
US20190221550A1 (en) | 2019-07-18 |
EP3511981B1 (en) | 2020-08-19 |
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