JP6187277B2 - 発光装置及びその製造方法 - Google Patents
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
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- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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Description
(発光装置の構成)
図1は、第1の実施の形態に係る発光装置1の垂直断面図である。図2(a)、(b)は、発光装置1に含まれる1つの発光素子11の周辺の垂直断面図である。
以下に、発光装置1の製造工程の一例を示す。
第2の実施の形態は、発光装置の透明板材の構成において第1の実施の形態と異なる。なお、第1の実施の形態と同様の点については、説明を省略又は簡略化する。
図6は、第2の実施の形態に係る発光装置3の垂直断面図である。発光装置3は、第1の実施の形態に係る発光装置1の一枚の透明板材13の代わりに、複数の蛍光体含有膜12の各々の上に1つずつ設けられる複数の透明板材13を有する。
以下に、発光装置1の製造工程の一例を示す。
上記の第1及び第2の実施の形態によれば、透明板材上に形成される蛍光体含有膜を蛍光体層として用いて、発光素子及び蛍光体層の周囲を白色反射材で囲むことにより、色ムラの少ない高輝度の発光装置を得ることができる。
10 基板
11 発光素子
11g 間隙
11s 側面
12 蛍光体含有膜
12s 側面
13 透明板材
15 白色反射材
Claims (2)
- 複数の発光素子を基板上に第1の間隙を有してフェイスダウン実装により搭載する工程と、
一枚の透明板材の表面上に、前記複数の発光素子上に接着される複数の蛍光体含有膜を前記第1の間隙に応じた第2の間隙で形成する工程と、
前記基板上の前記複数の発光素子上に、前記一枚の透明板材上の前記複数の蛍光体含有膜を、前記複数の蛍光体含有膜が前記複数の発光素子に直接又は透明接着層を介して接触するように、かつ、前記第1の間隙の直上の領域の少なくとも一部が前記蛍光体含有膜に覆われないように接着させる工程と、
前記基板上に前記複数の発光素子を囲むダムを形成する工程と、
前記ダムの内側に白色反射材を充填し、前記複数の発光素子の側面、及び前記複数の蛍光体含有膜の側面のうちの少なくとも前記第1の間隙に接しない側面を前記白色反射材で覆う工程と、を含む、発光装置の製造方法。 - 前記複数の蛍光体含有膜を形成する工程は、前記複数の蛍光体含有膜の各々の面積が前記複数の発光素子の各々の面積より大きくなるように行う、請求項1に記載の発光装置の製造方法。
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JP2014008810A JP6187277B2 (ja) | 2014-01-21 | 2014-01-21 | 発光装置及びその製造方法 |
US14/597,002 US9583682B2 (en) | 2014-01-21 | 2015-01-14 | Light-emitting device and method of manufacturing the same |
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US9583682B2 (en) | 2017-02-28 |
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