JP2013243344A - 発光装置 - Google Patents
発光装置 Download PDFInfo
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Abstract
【解決手段】配線導体22を備えた基体20と、導電粒子が透光性樹脂32中に混入された、異方性導電接着部材30と、配線導体上に異方性導電接着部材を介して接合される半導体発光素子10と、を有する発光装置であって、異方性導電接着部材において、半導体発光素子の周りの周囲領域における導電粒子31の濃度を、半導体発光素子と基体の間に挟まれた下部領域における導電粒子の濃度より低くした。
【選択図】図1
Description
前記異方性導電接着部材は、前記半導体発光素子の周りの周囲領域における導電粒子の濃度が、前記半導体発光素子と前記基体の間に挟まれた下部領域における導電粒子の濃度より低いことを特徴とする。
基体20は、絶縁部材である母材21と、母材21に保持され、正負一対の電極として機能する配線導体22と、を備えており、用いる発光素子の数や、使用形態等に応じて種々の材質や形状のものを用いることができる。フレームインサートタイプの樹脂パッケージ、ガラスエポキシ樹脂パッケージ、セラミックパッケージ、金属パッケージなどのLEDの他、柔軟性のないリジット基板、柔軟性のあるフレキシブル基板(可撓性基板)、さらには、これらを組み合わせたリジットフレキシブル基板などを用いた、COB(chip on board)やCOF(chip on film)を用いてもよい。配線導体は外部からの給電が可能なように端子部を有しており、端子部は、基体20の上面、側面、下面などに設けることができる。COBやCOFの場合は、端子部にコネクタを設けることもできる。
異方性導電接着部材は、発光素子と基体の配線導体とを導通させるための部材であるとともに、発光素子を基体に固定させるための部材でもある。このような2つの機能を兼ね備えるため、接着剤としての透光性樹脂と、その中に導通部材としての導電粒子が混入された複合物である。
異方性導電接着剤を硬化させて基体上に発光素子を固定した後、発光素子及び異方性導電接着部材を被覆するように封止部材を設けるのが好ましい。これにより、塵芥や水分、更には外力などから保護することができる。封止部材の材料としては、発光素子からの光を透過可能な透光性を有し、且つ、それらによって劣化しにくい耐光性を有するものが好ましい。
半導体発光素子は、異方性導電接着剤を介してフリップチップ実装される。半導体層の同一面側に正負電極を有しており、これらの電極は、発光素子からの光を反射しやすい金属が用いられている。例えば、銀(Ag)などの高反射率の電極を設けることで、発光素子(発光層)からの光をその下側から放出されにくい構造としている。異方性導電接着剤中の導電粒子は、発光素子の直下に位置しているが、このような電極を設けていることで、導電粒子による光の吸収が抑制されている。尚、電極としては、上記の銀の他の金属が積層されたものを用いることができる。
蛍光物質を有する発光装置とする場合には、その蛍光物質を効率良く励起できる短波長が発光可能な窒化物半導体が好適に挙げられる。半導体層の材料やその混晶度によって発光波長を種々選択することができる。
また、可視光領域の光だけでなく、紫外線や赤外線を出力する発光素子とすることができる。さらには、発光素子とともに、受光素子などを搭載することができる。
図2Aは、異方性導電接着剤を示す模式図であり、図2B〜図2Dは、本実施の形態の発光装置を得るための工程を説明したものである。詳細には、図2Aは、導電粒子31を透光性樹脂32中に混入させた異方性導電接着剤である。この硬化前の時点では、導電粒子31は透光性樹脂32内において、ほぼ均一に分散するように保持されている。次に、図2Bのように、基体20を用意し、その上面に設けられている一対の配線導体22と、その間に露出している母材21との、3つの部分を一体的に被覆するように異方性導電接着剤30bcを設ける。異方性導電接着剤30bcを設ける方法としては、印刷、ディスペンス等が挙げられる。また、このとき、後で載置する発光素子の面積よりも広い面積となるように設ける。
10…発光素子
20…基体
21…母材(絶縁部材)
22…配線導体
30…異方性導電接着剤
31…導電粒子
32…透光性樹脂
A…下部領域
B…外部領域
B1…フィレット部
40…封止部材
M…磁界発生部材(U字磁石)
Claims (9)
- 配線導体を備えた基体と、
導電粒子が透光性樹脂中に混入された、異方性導電接着部材と、
前記配線導体上に、前記異方性導電接着剤を介して接合される半導体発光素子と、を有する発光装置であって、
前記異方性導電接着部材は、前記半導体発光素子の周りの周囲領域における導電粒子の濃度が、前記半導体発光素子と前記基体の間に挟まれた下部領域における導電粒子の濃度より低いことを特徴とする発光装置。 - 前記周囲領域の異方性導電接着部材は、前記半導体発光素子の側面を被覆してフィレット部を形成している請求項1に記載の発光装置。
- 前記フィレット部において、発光層より上側の異方性導電接着部材中の導電粒子の濃度が、前記発光層より下側の異方性導電接着部材中の導電粒子の濃度より低い請求項2記載の発光装置。
- 前記フィレット部において、発光層より上側の異方性導電接着部材は実質的に透光性樹脂のみからなる請求項3記載の発光装置。
- 前記異方性導電接着部材は、前記周囲領域の周りにさらに該周囲領域より導電粒子の濃度が高い離隔領域が形成されるように設けられている請求項1記載の発光装置。
- 前記異方性導電接着部材は、磁性体である導電粒子を含む請求項1〜5のうちのいずれか1つに記載の発光装置。
- 前記異方性導電接着部材中の導電粒子の含有量が、1wt%以下であることを特徴とする1〜5のうちのいずれか1つに記載の発光装置。
- 前記配線導体は、少なくとも一部が磁界発生部材である請求項1〜7のいずれか1つに記載の発光装置。
- 前記異方性導電接着部材及び前記半導体発光素子を被覆する封止部材を有する請求項1〜8のいずれか1つに記載の発光装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013053857A JP2013243344A (ja) | 2012-04-23 | 2013-03-15 | 発光装置 |
US13/867,220 US8933482B2 (en) | 2012-04-23 | 2013-04-22 | Light emitting device |
EP13164813.1A EP2658001B1 (en) | 2012-04-23 | 2013-04-23 | Light emitting device and method for producing the same |
CN201310142220.3A CN103378269B (zh) | 2012-04-23 | 2013-04-23 | 发光装置 |
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JP2012097685 | 2012-04-23 | ||
JP2012097685 | 2012-04-23 | ||
JP2013053857A JP2013243344A (ja) | 2012-04-23 | 2013-03-15 | 発光装置 |
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JP2017135539A Division JP6477794B2 (ja) | 2012-04-23 | 2017-07-11 | 発光装置 |
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JP2013053857A Pending JP2013243344A (ja) | 2012-04-23 | 2013-03-15 | 発光装置 |
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US (1) | US8933482B2 (ja) |
EP (1) | EP2658001B1 (ja) |
JP (1) | JP2013243344A (ja) |
CN (1) | CN103378269B (ja) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015207737A (ja) * | 2014-04-23 | 2015-11-19 | 日亜化学工業株式会社 | 発光装置及びその製造方法 |
JP2016111210A (ja) * | 2014-12-08 | 2016-06-20 | 信越化学工業株式会社 | ダイボンド材を用いた導電接続方法及び光半導体装置 |
JP2017045832A (ja) * | 2015-08-26 | 2017-03-02 | 日亜化学工業株式会社 | 発光装置及び発光装置の製造方法 |
WO2018101003A1 (ja) * | 2016-11-29 | 2018-06-07 | デクセリアルズ株式会社 | 異方性導電接着剤 |
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Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6065586B2 (ja) | 2012-12-28 | 2017-01-25 | 日亜化学工業株式会社 | 発光装置及びその製造方法 |
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US11594662B2 (en) * | 2019-07-31 | 2023-02-28 | Nichia Corporation | Light-emitting device |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05206204A (ja) * | 1991-04-17 | 1993-08-13 | Oki Electric Ind Co Ltd | 導電粒子を用いた基板への電子部品の実装方法 |
US6426566B1 (en) * | 1998-12-02 | 2002-07-30 | Seiko Epson Corporation | Anisotropic conductor film, semiconductor chip, and method of packaging |
JP2004039983A (ja) * | 2002-07-05 | 2004-02-05 | Rohm Co Ltd | 半導体発光装置 |
JP2007049045A (ja) * | 2005-08-11 | 2007-02-22 | Rohm Co Ltd | 半導体発光素子およびこれを備えた半導体装置 |
JP2008058769A (ja) * | 2006-09-01 | 2008-03-13 | Epson Imaging Devices Corp | 実装構造体、電気光学装置及び電子機器 |
JP2010135513A (ja) * | 2008-12-03 | 2010-06-17 | Sumitomo Electric Ind Ltd | 実装体 |
JP2010283244A (ja) * | 2009-06-05 | 2010-12-16 | Mitsubishi Chemicals Corp | 半導体発光装置、照明装置、及び画像表示装置 |
US20110115078A1 (en) * | 2009-11-13 | 2011-05-19 | Samsung Electronics Co., Ltd. | Flip chip package |
JP2011222830A (ja) * | 2010-04-12 | 2011-11-04 | Sony Chemical & Information Device Corp | 発光装置の製造方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3561147B2 (ja) * | 1998-05-29 | 2004-09-02 | 京セラ株式会社 | 発光ダイオード素子アレイの実装構造 |
JP2000022300A (ja) * | 1998-07-02 | 2000-01-21 | Toshiba Corp | 配線基板および電子ユニット |
KR100502222B1 (ko) * | 1999-01-29 | 2005-07-18 | 마츠시타 덴끼 산교 가부시키가이샤 | 전자부품의 실장방법 및 그 장치 |
JP3993475B2 (ja) * | 2002-06-20 | 2007-10-17 | ローム株式会社 | Ledチップの実装構造、およびこれを備えた画像読み取り装置 |
JP2007157940A (ja) | 2005-12-02 | 2007-06-21 | Nichia Chem Ind Ltd | 発光装置および発光装置の製造方法 |
JP2010245481A (ja) * | 2009-04-10 | 2010-10-28 | Sharp Corp | 発光装置 |
KR20170091167A (ko) * | 2010-02-09 | 2017-08-08 | 니치아 카가쿠 고교 가부시키가이샤 | 발광 장치 |
US9670384B2 (en) * | 2011-03-18 | 2017-06-06 | Dexerials Corporation | Light-reflective anisotropic conductive adhesive and light-emitting device |
-
2013
- 2013-03-15 JP JP2013053857A patent/JP2013243344A/ja active Pending
- 2013-04-22 US US13/867,220 patent/US8933482B2/en active Active
- 2013-04-23 CN CN201310142220.3A patent/CN103378269B/zh active Active
- 2013-04-23 EP EP13164813.1A patent/EP2658001B1/en active Active
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05206204A (ja) * | 1991-04-17 | 1993-08-13 | Oki Electric Ind Co Ltd | 導電粒子を用いた基板への電子部品の実装方法 |
US6426566B1 (en) * | 1998-12-02 | 2002-07-30 | Seiko Epson Corporation | Anisotropic conductor film, semiconductor chip, and method of packaging |
JP2004039983A (ja) * | 2002-07-05 | 2004-02-05 | Rohm Co Ltd | 半導体発光装置 |
JP2007049045A (ja) * | 2005-08-11 | 2007-02-22 | Rohm Co Ltd | 半導体発光素子およびこれを備えた半導体装置 |
JP2008058769A (ja) * | 2006-09-01 | 2008-03-13 | Epson Imaging Devices Corp | 実装構造体、電気光学装置及び電子機器 |
JP2010135513A (ja) * | 2008-12-03 | 2010-06-17 | Sumitomo Electric Ind Ltd | 実装体 |
JP2010283244A (ja) * | 2009-06-05 | 2010-12-16 | Mitsubishi Chemicals Corp | 半導体発光装置、照明装置、及び画像表示装置 |
US20110115078A1 (en) * | 2009-11-13 | 2011-05-19 | Samsung Electronics Co., Ltd. | Flip chip package |
JP2011222830A (ja) * | 2010-04-12 | 2011-11-04 | Sony Chemical & Information Device Corp | 発光装置の製造方法 |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10290778B2 (en) | 2014-04-14 | 2019-05-14 | Nichia Corporation | Semiconductor device having semiconductor element bonded to base body by adhesive member |
US10978623B2 (en) | 2014-04-14 | 2021-04-13 | Nichia Corporation | Light emitting element including adhesive member containing particles |
JP2015207737A (ja) * | 2014-04-23 | 2015-11-19 | 日亜化学工業株式会社 | 発光装置及びその製造方法 |
JP2016111210A (ja) * | 2014-12-08 | 2016-06-20 | 信越化学工業株式会社 | ダイボンド材を用いた導電接続方法及び光半導体装置 |
JP2017045832A (ja) * | 2015-08-26 | 2017-03-02 | 日亜化学工業株式会社 | 発光装置及び発光装置の製造方法 |
WO2018101003A1 (ja) * | 2016-11-29 | 2018-06-07 | デクセリアルズ株式会社 | 異方性導電接着剤 |
JP2018088498A (ja) * | 2016-11-29 | 2018-06-07 | デクセリアルズ株式会社 | 異方性導電接着剤 |
JP7359804B2 (ja) | 2016-11-29 | 2023-10-11 | デクセリアルズ株式会社 | 異方性導電接着剤、発光装置及び発光装置の製造方法 |
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US8933482B2 (en) | 2015-01-13 |
CN103378269A (zh) | 2013-10-30 |
CN103378269B (zh) | 2017-03-01 |
EP2658001B1 (en) | 2018-09-12 |
EP2658001A2 (en) | 2013-10-30 |
EP2658001A3 (en) | 2015-12-16 |
US20130277707A1 (en) | 2013-10-24 |
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