TW201545378A - 封裝結構及其製法 - Google Patents

封裝結構及其製法 Download PDF

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TW201545378A
TW201545378A TW103117460A TW103117460A TW201545378A TW 201545378 A TW201545378 A TW 201545378A TW 103117460 A TW103117460 A TW 103117460A TW 103117460 A TW103117460 A TW 103117460A TW 201545378 A TW201545378 A TW 201545378A
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light
emitting element
package structure
metal member
light emitting
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TW103117460A
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Peiching Ling
Dezhong Liu
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Achrolux Inc
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Priority to TW103117460A priority Critical patent/TW201545378A/zh
Priority to US14/715,959 priority patent/US20150333238A1/en
Publication of TW201545378A publication Critical patent/TW201545378A/zh

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    • H—ELECTRICITY
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    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/642—Heat extraction or cooling elements characterized by the shape
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    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
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    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
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    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2224/4805—Shape
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    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
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    • H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92—Specific sequence of method steps
    • H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
    • H01L2224/9222—Sequential connecting processes
    • H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
    • H01L2224/92244—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a build-up interconnect
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    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/1515—Shape
    • H01L2924/15153—Shape the die mounting substrate comprising a recess for hosting the device
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  • Microelectronics & Electronic Packaging (AREA)
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Abstract

一種封裝結構，係包括：金屬件、設於該金屬件上之發光元件、包覆該發光元件之絕緣體、連結該發光元件之導電膠、以及覆蓋該發光元與該導電膠之螢光層，藉由導電膠作為線路，以降低製作成本及符合薄化之需求。本發明復提供該封裝結構之製法。

Description

封裝結構及其製法
本發明係有關一種封裝結構，尤指一種可發光式封裝結構。
隨著電子產業的蓬勃發展，電子產品在型態上趨於輕薄短小，在功能上則逐漸邁入高性能、高功能、高速度化的研發方向。其中，發光二極體(Light Emitting Diode,LED)因具有壽命長、體積小、高耐震性及耗電量低等優點，故廣泛地應用於照光需求之電子產品中，因此，於工業上、各種電子產品、生活家電之應用日趨普及。
第1圖係揭示一種習知LED封裝件之剖面圖。該LED封裝件1係一基板10上形成有一反射杯11，且該反射杯11具有一開口110，並設置一LED元件12於該開口110中，且該LED元件12利用複數如金線之導線120電性連接該基板10，再以具有螢光粉層之封裝膠體13包覆該LED元件12。
然，習知LED封裝件1中，使用該導線120電性連接該基板10與該LED元件12，故需製作較高之反射杯11以配合該導線120之弧度，使該封裝膠體13得以完整包覆該 些導線120，致使該LED封裝件1之高度無法降低，因而難以符合薄化之需求。
再者，製作該些導線120需使用打線製程之機台，且金線之價格昂貴，故大幅增加該LED封裝件1之製作成本。
因此，如何克服習知技術中之種種問題，實已成目前亟欲解決的課題。
鑑於上述習知技術之缺失，本發明提供一種封裝結構，係包括：金屬件；至少一發光元件，係設於該金屬件上，且該發光元件具有結合至該金屬件之非作用側及相對該非作用側之發光側；絕緣體，係設於該金屬件上以包覆該發光元件，且該絕緣體定義有相對之第一表面與第二表面，使該發光元件之發光側外露於該絕緣體之第一表面；導電膠，係設於該絕緣體之第一表面上並連結該發光元件之發光側；以及螢光層，係設於該絕緣體之第一表面上，以覆蓋該發光元件之發光側與該導電膠。
本發明復提供一種封裝結構之製法，係包括：結合至少一發光元件於一金屬件上，且該發光元件具有結合至該金屬件之非作用側及相對該非作用側之發光側；形成絕緣體於該金屬件上，以令該絕緣體包覆該發光元件，該絕緣體定義有相對之第一表面與第二表面，使發光元件之發光側外露於該絕緣體之第一表面；形成導電膠於該絕緣體之第一表面上，使該導電膠連結該發光元件之發光側；以及形成螢光層於該絕緣體之第一表面上，以覆蓋該發光元件 之發光側與該導電膠。
由上可知，本發明之封裝結構及其製法，係藉由該導電膠電性連接該發光元件，故可將該導電膠平坦塗佈於該絕緣體之第一表面上，因而該導電膠不會產生如習知導線之弧度，因此，該螢光層僅需平坦塗佈於該絕緣體之第一表面上，即可覆蓋該導電膠，使該封裝結構之高度能大幅降低，以符合薄化之需求。
再者，該導電膠之製作成本遠低於習知導線之製作成本，故能大幅降低該封裝結構之製作成本。
1‧‧‧LED封裝件
10‧‧‧基板
11‧‧‧反射杯
110、300‧‧‧開口
12‧‧‧LED元件
120‧‧‧導線
13‧‧‧封裝膠體
2、3‧‧‧封裝結構
20、30‧‧‧金屬件
20’‧‧‧板材
20a‧‧‧第一側
20b‧‧‧第二側
200‧‧‧黏著材
21‧‧‧發光元件
21a‧‧‧發光側
21b‧‧‧非作用側
210‧‧‧電極
22‧‧‧絕緣體
22a‧‧‧第一表面
22b‧‧‧第二表面
23‧‧‧導電膠
24‧‧‧螢光層
240‧‧‧螢光顆粒
第1圖係為習知LED封裝件之剖面圖；第2A至2F圖係為本發明之封裝結構之製法之第一實施例的剖面示意圖；其中，第2A’圖係為第2A圖之上視示意圖；以及第3A至3F圖係為本發明之封裝結構之製法之第二實施例的剖面示意圖。
以下藉由特定的具體實施例說明本發明之實施方式，熟悉此技藝之人士可由本說明書所揭示之內容輕易地瞭解本發明之其他優點及功效。
須知，本說明書所附圖式所繪示之結構、比例、大小等，均僅用以配合說明書所揭示之內容，以供熟悉此技藝之人士之瞭解與閱讀，並非用以限定本發明可實施之限定條件，故不具技術上之實質意義，任何結構之修飾、比例 關係之改變或大小之調整，在不影響本發明所能產生之功效及所能達成之目的下，均應仍落在本發明所揭示之技術內容得能涵蓋之範圍內。同時，本說明書中所引用之如“上”、“第一”、“第二”及“一”等之用語，亦僅為便於敘述之明瞭，而非用以限定本發明可實施之範圍，其相對關係之改變或調整，在無實質變更技術內容下，當亦視為本發明可實施之範疇。
第2A至2F圖係為本發明之封裝結構2之製法之第一實施例的剖面示意圖。
如第2A及2A’圖所示，提供一包含複數金屬件20之板材20’，且該金屬件20具有相對之第一側20a與第二側20b。
於本實施例中，該金屬件20係為鋁材，以作為散熱板之用。
再者，第2A圖係為第2A’圖之局部剖面圖，且因各該金屬件20周圍之製程相同，故僅圖示單一該金屬件20，以便於說明。
如第2B圖所示，以點膠、塗佈等方式形成黏著材200於該金屬件20之第一側20a上。
於本實施例中，該黏著材200係為導熱材質。
如第2C圖所示，將複數個發光元件21分別設置於各該金屬件20上之黏著材200上，使單一該發光元件21設於單一該金屬件20上。
於本實施例中，該發光元件21係為發光二極體，其具 有一結合至該金屬件20第一側20a之非作用側21b、及相對該非作用側21b之一發光側21a，該發光側21a上具有複數電極210，且該非作用側21b係可作為該發光元件21之散熱側。
如第2D圖所示，形成絕緣體22於該金屬件20之第一側20a上，使該絕緣體22包覆該發光元件21與該黏著材200，且完全覆蓋該金屬件20之第一側20a而未露出該第一側20a。
於本實施例中，該絕緣體22係具有相對之第一表面22a與第二表面22b，而該發光元件21之發光側21a係外露於該絕緣體22之第一表面22a。
再者，該發光元件21之發光側21a之電極210表面係與該絕緣體22之第一表面22a齊平。
又，形成該絕緣體22之方式係為壓合薄膜製程、網版印刷、模板印刷等，並無特別限制。
另外，該絕緣體22之材質係為矽膠、樹脂等，並無特別限制。
如第2E圖所示，形成導電膠23於該絕緣體22之第一表面22a上，使該導電膠23電性連結該發光元件21之發光側21a之電極210。
於本實施例中，該導電膠23係作為線路，且亦具有導熱之功能。具體地，該導電膠23係為銀膠或銅膏，並利用塗佈方式形成者，因而不需使用打線製程，故有利於簡化製程(例如，免用打線機台)與降低成本(例如，免用金 線)。
再者，該導電膠23並未接觸該金屬件20。
如第2F圖所示，形成一具有複數螢光顆粒240之螢光層24於該絕緣體22之第一表面22a上，以覆蓋該發光元件21之發光側21a與部分該導電膠23。
於本實施例中，因使用該導電膠23作為連結該發光元件21之導電元件，故無需考量習知導線之弧度，而可依需求薄化該螢光層24，以降低整體結構之高度。
第3A至3F圖係為本發明之封裝結構3之製法之第二實施例的剖面示意圖。
如第3A至3C圖所示，類似第2A至2C圖之製程，但該金屬件30係形成有開口300，以供該發光元件21置放於該開口300中。
於本實施例中，該黏著材200係形成於該開口300中。
如第3D至3F圖所示，類似第3D至3F圖之製程，且該絕緣體22復形成於該開口300中。此外，該絕緣體22之第一表面22a係可高於該發光元件21之發光側21a，俾利於後續形成之導電膠23連接至發光元件21之電極210。
於第一與第二實施中，後續製程係可形成一用以保護該螢光層24之保護層(圖略)或一如透鏡之透光層(圖略)於該螢光層24上，再進行切割作業，以製得複數個發光式封裝結構2。
上述實施例係用以例示性說明本發明之原理及其功效，而非用於限制本發明。任何熟習此項技藝之人士均可 在不違背本發明之精神及範疇下，對上述實施例進行修改。因此本發明之權利保護範圍，應如後述之申請專利範圍所列。
2‧‧‧封裝結構
20‧‧‧金屬件
200‧‧‧黏著材
21‧‧‧發光元件
21a‧‧‧發光側
21b‧‧‧非作用側
22‧‧‧絕緣體
22a‧‧‧第一表面
22b‧‧‧第二表面
23‧‧‧導電膠
24‧‧‧螢光層
240‧‧‧螢光顆粒

Claims (12)

  1. 一種封裝結構，係包括：金屬件；至少一發光元件，係設於該金屬件上，且該發光元件具有結合至該金屬件之非作用側及相對該非作用側之發光側；絕緣體，係設於該金屬件上以包覆該發光元件，且該絕緣體定義有相對之第一表面與第二表面，使該發光元件之發光側外露於該絕緣體之第一表面；導電膠，係設於該絕緣體之第一表面上並連結該發光元件之發光側；以及螢光層，係設於該絕緣體之第一表面上，以覆蓋該發光元件之發光側與該導電膠。
  2. 如申請專利範圍第1項所述之封裝結構，其中，該金屬件形成有開口，以供該發光元件置放於該開口中。
  3. 如申請專利範圍第1項所述之封裝結構，其中，該發光元件藉由黏著材結合於該金屬件上。
  4. 如申請專利範圍第3項所述之封裝結構，其中，該黏著材係為導熱膠。
  5. 如申請專利範圍第1項所述之封裝結構，其中，該發光元件係為發光二極體。
  6. 如申請專利範圍第1項所述之封裝結構，其中，該導電膠係為線路。
  7. 一種封裝結構之製法，係包括： 結合至少一發光元件於一金屬件上，且該發光元件具有結合至該金屬件之非作用側及相對該非作用側之發光側；形成絕緣體於該金屬件上，以令該絕緣體包覆該發光元件，該絕緣體定義有相對之第一表面與第二表面，使發光元件之發光側外露於該絕緣體之第一表面；形成導電膠於該絕緣體之第一表面上，使該導電膠連結該發光元件之發光側；以及形成螢光層於該絕緣體之第一表面上，以覆蓋該發光元件之發光側與該導電膠。
  8. 如申請專利範圍第7項所述之封裝結構之製法，其中，該金屬件形成有開口，以供該發光元件置放於該開口中。
  9. 如申請專利範圍第7項所述之封裝結構之製法，其中，該發光元件藉由黏著材結合於該金屬件上。
  10. 如申請專利範圍第9項所述之封裝結構之製法，其中，該黏著材係為導熱膠。
  11. 如申請專利範圍第7項所述之封裝結構之製法，其中，該發光元件係為發光二極體。
  12. 如申請專利範圍第7項所述之封裝結構之製法，其中，該導電膠係為線路。
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