TW201511347A - 發光二極體封裝結構及其製造方法 - Google Patents
發光二極體封裝結構及其製造方法 Download PDFInfo
- Publication number
- TW201511347A TW201511347A TW102132666A TW102132666A TW201511347A TW 201511347 A TW201511347 A TW 201511347A TW 102132666 A TW102132666 A TW 102132666A TW 102132666 A TW102132666 A TW 102132666A TW 201511347 A TW201511347 A TW 201511347A
- Authority
- TW
- Taiwan
- Prior art keywords
- substrate
- layer
- emitting diode
- light emitting
- package structure
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 23
- 239000000758 substrate Substances 0.000 claims abstract description 77
- 239000003292 glue Substances 0.000 claims abstract description 21
- 239000010410 layer Substances 0.000 claims description 121
- 239000002184 metal Substances 0.000 claims description 33
- 229910052751 metal Inorganic materials 0.000 claims description 33
- 229910000679 solder Inorganic materials 0.000 claims description 24
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 16
- 239000000835 fiber Substances 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 6
- 239000000853 adhesive Substances 0.000 claims description 5
- 230000001070 adhesive effect Effects 0.000 claims description 5
- 239000012790 adhesive layer Substances 0.000 claims description 3
- 239000000084 colloidal system Substances 0.000 claims description 3
- 238000007747 plating Methods 0.000 claims description 3
- 238000003825 pressing Methods 0.000 claims description 2
- 210000004508 polar body Anatomy 0.000 claims 1
- 238000009413 insulation Methods 0.000 abstract description 7
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 239000003822 epoxy resin Substances 0.000 description 4
- 229920000647 polyepoxide Polymers 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000011889 copper foil Substances 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000012858 packaging process Methods 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- -1 polyethylene terephthalate Polymers 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910001174 tin-lead alloy Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L24/14—Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/508—Wavelength conversion elements having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer, wavelength conversion layer with a concentration gradient of the wavelength conversion material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Led Device Packages (AREA)
- Non-Portable Lighting Devices Or Systems Thereof (AREA)
Abstract
一種發光二極體封裝結構,包含有一基板、一發光二極體晶片、一絕緣層,以及一螢光膠層,基板具有一正極接點及一負極接點,發光二極體晶片固定於基板且具有一正極端及一負極端,發光二極體之正、負極端分別電性連接基板之正、負極接點,此外,基板之表面設有一絕緣層,絕緣層環繞於發光二極體晶片之周圍,絕緣層之表面設有一螢光膠層,螢光膠層包覆住發光二極體晶片。藉此,本發明之發光二極體封裝結構能夠達到降低製造成本及縮小封裝體積的功效。
Description
本發明與發光二極體有關,尤指一種發光二極體封裝結構及其製造方法。
傳統發光二極體的封裝製程是將發光二極體晶片固定在基板上之後,接著利用打線接合方式將多數條導線(如金線)連接在發光二極體晶片與基板之間,最後再利用一封膠體(如環氧樹脂)將發光二極體晶片進行封裝,但是此一封裝結構會因為晶片的電路導通需求及導線的連接關係而無法有效減少整體厚度,導致在應用於產品時會缺乏競爭力。
為了解決上述問題,中華民國公開第201013858號專利案是將晶粒配置在兩個以上下堆疊方式設置之基板內,再搭配單面或雙面的重新分配層(Redistribution Layer,RDL)來減少整體封裝結構的厚度。然而,此習用專利案的製程相當複雜,實際上所能減少厚度的效果也是有限,並無法真正達到降低製造成本及減少封裝厚度的目的。
本發明之主要目的在於提供一種發光二極體封裝結構,其能降低製造成本及減少封裝厚度。
為了達成上述主要目的,本發明之發光二極體封
裝結構包含有一基板、一發光二極體晶片、一絕緣層,以及一螢光膠層。該基板具有一正極接點及一負極接點,該正、負極接點位於該基板之同一側;該發光二極體晶片設於該基板且具有一正極端及一負極端,該發光二極體之正極端電性連接該基板之正極接點,該發光二極點之負極端電性接觸該基板之負極接點;該絕緣層設於該基板且環繞於該發光二極體晶片之周圍;該螢光膠層設於該絕緣層之表面且包覆住該發光二極體晶片。
本發明之次要目的在提供一種前述發光二極體封裝結構之製造方法,其能有效簡化製程。
為了達成上述次要目的,本發明之製造方法包含有下列步驟:A)對該基板之表面形成出一膠槽;B)形成一防焊層在該基板之表面,該防銲層具有一開口,使該基板之表面經由該開口曝露出該膠槽及一鄰接該膠槽之負極接點區;C)電鍍一導電層在該基板之負極接點區;D)去除該防焊層;E)形成一絕緣層於該基板之表面,該絕緣層具有一第二開口,使該基板之表面經由該第二開口曝露出該膠槽、該導電層,以及一鄰接該膠槽之正極接點區;F)分別電鍍一焊料層於該正極接點區及該導電層之表面,使該二焊料層分別形成該正極接點與該負極接點;G)藉由一設於該膠槽內之導電膠而將該發光二極體晶片固定於該基板,並且使該發光二極體晶片之正、負極端分別黏合於該二焊料層;H)對該發光二極體晶片進行熱壓,使該二焊料層熔解而將該發光二極體晶片之正、負極端分別固定於該二焊料層所形成之正、負極
接點;I)佈設該螢光膠層於該絕緣層之表面,使該螢光膠層包覆住該發光二極體晶片。
藉此,本發明之發光二極體使用單一基板即能完成該發光二極體晶片的封裝製程,相較於傳統打線接合製程或習用專利案之製造方法,本發明之發光二極體封裝結構更能有效降低製造成本及減少封裝體積。
「第一實施例」
10‧‧‧發光二極體封裝結構
20‧‧‧基板
21‧‧‧纖維預浸材
22‧‧‧第一金屬層
221‧‧‧膠槽
23‧‧‧第二金屬層
24‧‧‧正極接點
25‧‧‧負極接點
26‧‧‧防焊層
262‧‧‧第一開口
27‧‧‧負極接點區
28‧‧‧導電層
29‧‧‧焊料區
30‧‧‧發光二極體晶片
32‧‧‧正極端
34‧‧‧負極端
36‧‧‧導電膠
38‧‧‧熱壓盤
40‧‧‧絕緣層
42‧‧‧第二開口
50‧‧‧螢光膠層
「第二實施例」
52‧‧‧螢光膠層
60‧‧‧發光二極體封裝結構
70‧‧‧基板
72‧‧‧透明層
74‧‧‧金屬層
第1圖為本發明第一實施例之結構示意圖。
第2圖為本發明第一實施例之製造方法的流程圖。
第3圖為本發明第二實施例之結構示意圖。
請參閱第1圖,為本發明第一實施例之發光二極體封裝結構10,包含有一基板20、一發光二極體晶片30、一絕緣層40,以及一螢光膠層50。
基板20在本實施例中具有一纖維預浸材21、一第一金屬層22,以及一第二金屬層23。纖維預浸材21是由玻璃纖維及環氧樹脂所構成之複合材料,第一、第二金屬層22、23(在此以銅箔為例)分別貼設於纖維預浸材21之正、背兩面。此外,基板20更具有一正極接點24及一負極接點25,正、負極接點24、25相對地設於第一金屬層22之表面而位於基板20之同一側。
發光二極體晶片30固定於基板20之第一金屬層22的表面,並且具有一正極端32及一負極端34,發光二極體晶
片30之正極端32電性連接基板20之正極接點24,發光二極體晶片30之負極端34電性連接基板20之負極接點25。
絕緣層40佈設於基板20之第一金屬層22的表面且環繞於發光二極體晶片30之周圍,用以對基板20之正、負極接點24、25及發光二極體晶片30之正、負極端32、34提供絕緣保護效果。值得一提的是,絕緣層40的顏色以不吸光的白色為最佳選擇,以避免吸收發光二極體晶片30所產生的光線而影響發光效果。
螢光膠層50設於絕緣層40之表面且包覆住發光二極體晶片30,用以提升發光二極體晶片30的發光效率。螢光膠層50是由環氧樹脂與螢光粉混合而成。
以上為本發明之發光二極體晶片10的詳細結構,以下再就本發明之製造方法進行說明,如第2圖所示:
步驟A):對基板20之第一金屬層22的表面以蝕刻技術形成出一膠槽221。
步驟B):塗佈一防焊層26在基板20之第一金屬層22的表面且留有一第一開口262,使基板20之第一金屬層22的表面經由第一開口262曝露出膠槽221及一鄰接膠槽221之負極接點區27。
步驟C):以電鍍方式在基板20之負極接點區27形成一導電層28(材質以銅為最佳選擇)。
步驟D):去除防焊層26。
步驟E):塗佈絕緣層40於基板20之第一金屬層22的表面且留有一第二開口42,使基板20之第一金屬層22
的表面經由第二開口42曝露出膠槽221、導電層28,以及一鄰接膠槽221之正極接點區29。
步驟F):以電鍍方式分別於基板20之正極接點區29及導電層28之表面形成一焊料層(材質以錫鉛合金為最佳選擇),使兩個焊料層分別形成基板20之正極接點24與負極接點25。
步驟G):設置一導電膠36(如銀膠)於基板20之膠槽221內,接著藉由導電膠36將發光二極體晶片30固定於基板20之第一金屬層22的表面,並在固定之後使發光二極體晶片30之正、負極端32、34分別黏合於其中一個焊料層。
步驟H):藉由一熱壓盤38對發光二極體晶片30進行熱壓合,使兩焊料層熔解而將發光二極體晶片30之正、負極端32、34及兩焊料層所形成之正、負極接點24、25固定在一起,以完成發光二極體晶片30與基板20之間的電性連接關係。
步驟I):塗佈螢光膠層50於絕緣層40之表面,使螢光膠層50包覆住發光二極體晶片30,如此即完成本發明之發光二極體封裝結構10的製造。
綜上所陳,本發明第一實施例之發光二極體封裝結構10使用單一基板20就能完成發光二極體晶片30的封裝製程,相較於傳統打線接合製程或習用專利案所使用之兩個上下堆疊之基板及重新分配層的佈線設計,本發明之發光二極體封裝結構10不但製程相對簡單而降低製造成本,同時更能有效減少封裝體積而達到本發明之目的。
請再參閱第3圖,為本發明第二實施例之發光二極體封裝結構60,其與前述實施例的主要差異在於基板70的結構不同。詳而言之,基板70在本實施例中具有一透明層72,透明層72的材質以聚對苯二甲酸乙二酯(俗稱PET)為最佳選擇,透明層72之正面貼設有一金屬層74(在此以銅箔為例),金屬層74之表面塗佈有絕緣層40,絕緣層40之表面再塗佈有螢光膠層50,透明層72之背面塗佈有另一螢光膠層52,螢光膠層52同樣是由環氧樹脂與螢光粉混合而成,使得發光二極體晶片30的光線可以從基板70之正、背兩面同時發射出去。另一方面,本發明第二實施例之製造方法與前述實施例之製造方法的最大差別在於增加了將螢光膠體52塗佈於基板70之透明層74的背面的流程,其餘步驟則是幾乎完全相同,故在此容不再贅述其細部流程。
藉此,本發明第二實施例之發光二極體封裝結構60不但具有上述實施例之降低製造成本及減少封裝厚度的特色,另外再利用基板70之透明層72及雙面螢光膠層50、52的設計,使本發明之發光二極體封裝結構60可以達到雙面發光的效果。
10‧‧‧發光二極體封裝結構
20‧‧‧基板
21‧‧‧纖維預浸材
22‧‧‧第一金屬層
23‧‧‧第二金屬層
24‧‧‧正極接點
25‧‧‧負極接點
30‧‧‧發光二極體晶片
32‧‧‧正極端
34‧‧‧負極端
40‧‧‧絕緣層
50‧‧‧螢光膠層
Claims (10)
- 一種發光二極體封裝結構,包含有:一基板,具有一正極接點及一負極接點,該正、負極接點位於該基板之同一側;一發光二極體晶片,設於該基板且具有一正極端及一負極端,該正極端電性連接該基板之正極接點,該負極端電性連接該基板之負極接點;一絕緣層,設於該基板且環繞於該發光二極體晶片之周圍;以及一螢光膠層,設於該絕緣層之表面且包覆住該發光二極體晶片。
- 如請求項1所述之發光二極體封裝結構,其中該基板具有一纖維預浸材、一第一金屬層,以及一第二金屬層,該纖維預浸材具有一正面及一背面,該第一、第二金屬層分別設於該纖維預浸材之正、背兩面;該正、負極接點設於該第一金屬層之表面。
- 如請求項1所述之發光二極體封裝結構,其中該基板具有一透明層及一金屬層,該透明層具有一正面及一背面,該金屬層設於該透明層之正面;該正、負極接點設於該金屬層之表面。
- 如請求項3所述之發光二極體封裝結構,其中該透明層之背面設有另一螢光膠體。
- 如請求項1所述之發光二極體封裝結構,其中該絕緣層為白色。
- 一種發光二極體封裝結構之製造方法,包含有下列步驟:A)對一基板之表面形成一膠槽;B)形成一防焊層在該基板之表面,該防銲層具有一第一開口,使該基板之表面經由該第一開口曝露出該膠槽及一鄰接該膠槽之負極接點區;C)電鍍一導電層在該基板之負極接點區;D)去除該防焊層;E)形成一絕緣層於該基板之表面,該絕緣層具有一第二開口,使該基板之表面經由該第二開口曝露出該膠槽、該導電層,以及一鄰接該膠槽之正極接點區;F)分別電鍍一焊料層於該正極接點區及該導電層之表面;G)藉由一設於該膠槽內之導電膠而將一發光二極體晶片固定於該基板,並且使該發光二極體晶片之一正極端及一負極端分別黏合於該二焊料層;H)對該發光二極體晶片進行熱壓合,使該二焊料層熔解而將該發光二極體晶片之正、負極端分別固定於該二焊料層;以及I)形成一螢光膠層於該絕緣層之表面,使該螢光膠層包覆住該發光二極體晶片。
- 如請求項6所述之發光二極體封裝結構之製造方法,其中該基板具有一纖維預浸材、一第一金屬層,以及一第二金屬層,該纖維預浸材具有一正面及一背面,該第一、第二金屬層分別設於該纖維預浸材之正、背兩面層;在步驟A)中係對該基板之第一金屬層的表面蝕刻出該膠槽。
- 如請求項6所述之發光二極體封裝結構之製造方法,其中該基板具有一透明層及一金屬層,該透明層具有一正面及一背面,該金屬層設於該透明層之正面;在步驟A)中係對該基板之金屬層蝕刻出該膠槽。
- 如請求項8所述之發光二極體封裝結構之製造方法,在步驟I)中,佈設另一螢光膠體於該基板之透明層的背面。
- 如請求項6所述之發光二極體封裝結構之製造方法,在步驟E)中,該絕緣層為白色。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW102132666A TW201511347A (zh) | 2013-09-10 | 2013-09-10 | 發光二極體封裝結構及其製造方法 |
KR20130123882A KR101509045B1 (ko) | 2013-09-10 | 2013-10-17 | 발광다이오드 패키지 구조체 및 그 제조 방법 |
JP2013223167A JP2015056654A (ja) | 2013-09-10 | 2013-10-28 | 半導体装置及びその製造方法 |
US14/072,245 US8980659B1 (en) | 2013-09-10 | 2013-11-05 | LED package and manufacturing process of same |
US14/611,683 US20150144982A1 (en) | 2013-09-10 | 2015-02-02 | Led package and manufacturing process of same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW102132666A TW201511347A (zh) | 2013-09-10 | 2013-09-10 | 發光二極體封裝結構及其製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW201511347A true TW201511347A (zh) | 2015-03-16 |
Family
ID=52624688
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW102132666A TW201511347A (zh) | 2013-09-10 | 2013-09-10 | 發光二極體封裝結構及其製造方法 |
Country Status (4)
Country | Link |
---|---|
US (2) | US8980659B1 (zh) |
JP (1) | JP2015056654A (zh) |
KR (1) | KR101509045B1 (zh) |
TW (1) | TW201511347A (zh) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
AT513747B1 (de) * | 2013-02-28 | 2014-07-15 | Mikroelektronik Ges Mit Beschränkter Haftung Ab | Bestückungsverfahren für Schaltungsträger und Schaltungsträger |
US9666516B2 (en) * | 2014-12-01 | 2017-05-30 | General Electric Company | Electronic packages and methods of making and using the same |
CN106816513B (zh) * | 2015-11-30 | 2019-06-28 | 讯芯电子科技(中山)有限公司 | Led芯片的封装结构及其制造方法 |
JP2017157724A (ja) * | 2016-03-02 | 2017-09-07 | デクセリアルズ株式会社 | 表示装置及びその製造方法、並びに発光装置及びその製造方法 |
CN106932951B (zh) * | 2017-04-14 | 2018-11-23 | 深圳市华星光电技术有限公司 | Led灯源及其制造方法、背光模组 |
CN107565000B (zh) * | 2017-09-14 | 2018-08-28 | 海迪科(南通)光电科技有限公司 | 一种具有双层荧光粉层的led封装结构及其封装方法 |
KR102592491B1 (ko) * | 2018-09-12 | 2023-10-24 | 주식회사 루멘스 | 멀티 픽셀 엘이디 패키지 |
CN110267435A (zh) * | 2019-07-01 | 2019-09-20 | 江门市华浦照明有限公司 | 一种基材的制作方法及柔性线路板 |
KR20210072194A (ko) * | 2019-12-06 | 2021-06-17 | 삼성디스플레이 주식회사 | 발광 소자의 정렬 방법, 이를 이용한 표시 장치의 제조 방법 및 표시 장치 |
WO2022203452A1 (ko) * | 2021-03-25 | 2022-09-29 | 서울바이오시스 주식회사 | 발광 다이오드 패키지 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000216413A (ja) * | 1999-01-26 | 2000-08-04 | Apic Yamada Corp | Bga型透明プラスチック半導体パッケ―ジ |
US7049528B2 (en) * | 2002-02-06 | 2006-05-23 | Ibiden Co., Ltd. | Semiconductor chip mounting wiring board, manufacturing method for same, and semiconductor module |
JP4246134B2 (ja) * | 2003-10-07 | 2009-04-02 | パナソニック株式会社 | 半導体素子の実装方法、及び半導体素子実装基板 |
US20050116235A1 (en) * | 2003-12-02 | 2005-06-02 | Schultz John C. | Illumination assembly |
JP2007165811A (ja) * | 2005-12-16 | 2007-06-28 | Nichia Chem Ind Ltd | 発光装置 |
JPWO2008123020A1 (ja) * | 2007-03-09 | 2010-07-15 | 三洋電機株式会社 | 半導体装置及びその製造方法 |
KR101365625B1 (ko) * | 2007-06-21 | 2014-02-25 | 서울반도체 주식회사 | 양방향 발광 다이오드 |
JP5426124B2 (ja) * | 2008-08-28 | 2014-02-26 | 株式会社東芝 | 半導体発光装置の製造方法及び半導体発光装置 |
US8237257B2 (en) | 2008-09-25 | 2012-08-07 | King Dragon International Inc. | Substrate structure with die embedded inside and dual build-up layers over both side surfaces and method of the same |
KR20100080423A (ko) * | 2008-12-30 | 2010-07-08 | 삼성엘이디 주식회사 | 발광소자 패키지 및 그 제조방법 |
JP5996871B2 (ja) * | 2010-02-09 | 2016-09-21 | 日亜化学工業株式会社 | 発光装置および発光装置の製造方法 |
JP5496072B2 (ja) * | 2010-12-09 | 2014-05-21 | シチズンホールディングス株式会社 | 半導体発光装置及びその製造方法 |
KR101255121B1 (ko) * | 2011-08-10 | 2013-04-22 | 장종진 | 발광 다이오드 패키지 및 그의 제조 방법 |
JP6102116B2 (ja) * | 2012-08-07 | 2017-03-29 | 日亜化学工業株式会社 | 発光装置の製造方法 |
US20150021632A1 (en) * | 2013-03-14 | 2015-01-22 | Heilux, Llc | Led with multiple bonding methods on flexible transparent substrate |
-
2013
- 2013-09-10 TW TW102132666A patent/TW201511347A/zh unknown
- 2013-10-17 KR KR20130123882A patent/KR101509045B1/ko active IP Right Grant
- 2013-10-28 JP JP2013223167A patent/JP2015056654A/ja active Pending
- 2013-11-05 US US14/072,245 patent/US8980659B1/en active Active
-
2015
- 2015-02-02 US US14/611,683 patent/US20150144982A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
US8980659B1 (en) | 2015-03-17 |
US20150069435A1 (en) | 2015-03-12 |
JP2015056654A (ja) | 2015-03-23 |
US20150144982A1 (en) | 2015-05-28 |
KR20150029497A (ko) | 2015-03-18 |
KR101509045B1 (ko) | 2015-04-07 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TW201511347A (zh) | 發光二極體封裝結構及其製造方法 | |
CN105895792B (zh) | 发光组件 | |
US7485480B2 (en) | Method of manufacturing high power light-emitting device package and structure thereof | |
WO2013168802A1 (ja) | Ledモジュール | |
JP4910220B1 (ja) | Ledモジュール装置及びその製造方法 | |
TWI505519B (zh) | 發光二極體燈條及其製造方法 | |
JP5940799B2 (ja) | 電子部品搭載用パッケージ及び電子部品パッケージ並びにそれらの製造方法 | |
WO2010050067A1 (ja) | 発光素子パッケージ用基板及び発光素子パッケージ | |
US20130062656A1 (en) | Thermally enhanced optical package | |
US9553245B2 (en) | Light emitting device | |
US9537019B2 (en) | Semiconductor device | |
JP2012124453A (ja) | Ledモジュール装置及びその製造方法 | |
KR101363980B1 (ko) | 광 모듈 및 그 제조 방법 | |
JP2011077164A (ja) | 半導体発光装置 | |
JP2012216654A (ja) | 樹脂成形フレーム及び光半導体装置 | |
JP2016018990A (ja) | パッケージ構造及びその製法並びに搭載部材 | |
JP2009021303A (ja) | 発光装置 | |
KR101248607B1 (ko) | 열우물을 이용한 방열구조를 가지는 led 어레이 모듈 | |
TWI743618B (zh) | 封裝載板及發光裝置 | |
KR101321887B1 (ko) | 조명용 엘이디모듈의 리드프레임 | |
TWI521745B (zh) | 發光二極體封裝結構及其製造方法 | |
TWI420711B (zh) | 發光二極體封裝及其製作方法 | |
WO2021153121A1 (ja) | 半導体発光装置及び半導体発光装置の製造方法 | |
TWI544664B (zh) | 發光式封裝結構及其製法 | |
JP2020074488A (ja) | 発光装置 |