US20150144982A1 - Led package and manufacturing process of same - Google Patents

Led package and manufacturing process of same Download PDF

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Publication number
US20150144982A1
US20150144982A1 US14/611,683 US201514611683A US2015144982A1 US 20150144982 A1 US20150144982 A1 US 20150144982A1 US 201514611683 A US201514611683 A US 201514611683A US 2015144982 A1 US2015144982 A1 US 2015144982A1
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Prior art keywords
layer
substrate
positive
led chip
negative
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Abandoned
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US14/611,683
Inventor
Wei-Jen Chen
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Lingsen Precision Industries Ltd
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Lingsen Precision Industries Ltd
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Priority to US14/611,683 priority Critical patent/US20150144982A1/en
Publication of US20150144982A1 publication Critical patent/US20150144982A1/en
Abandoned legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L24/14—Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/508—Wavelength conversion elements having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer, wavelength conversion layer with a concentration gradient of the wavelength conversion material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/56—Materials, e.g. epoxy or silicone resin
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating

Definitions

  • the present invention relates generally to a light-emitting diode (LED) and more particularly, to an LED package and its manufacturing process.
  • LED light-emitting diode
  • a conventional manufacturing process of an LED package is to fasten an LED chip to a substrate, then to connect multiple wires to between the LED chip and the substrate by wire bonding, and finally to package the LED chip via an encapsulating member (e.g. epoxy resin).
  • an encapsulating member e.g. epoxy resin
  • Taiwan Patent Laid-open No. 20103858 disclosed that LED chips are mounted inside two substrates superposed on each other, and a single-sided or double-sided redistribution layer (RDL) is available, thus reducing the thickness of the whole package.
  • RDL redistribution layer
  • the primary objective of the present invention is to provide an LED package capable of decreasing production cost and package thickness.
  • the LED package formed of a substrate, an LED chip, an insulated layer, and a fluorescent adhesive layer.
  • the substrate includes a positive contact and a negative contact, both of which are located at the same side thereof.
  • the LED chip is located on the substrate and includes a positive terminal and a negative terminal, the former of which is electrically connected with the positive contact and latter is electrically connected with the negative contact.
  • the insulated layer is mounted to the substrate and surrounds the LED chip.
  • the fluorescent adhesive layer is mounted to a surface of the insulated layer and covers the LED chip.
  • the secondary objective of the present invention is to provide a manufacturing process of the LED package that can be effectively simplified.
  • the manufacturing process including the steps of forming a cavity on a surface of the substrate; forming a solder mask layer on the surface of the substrate, the solder mask layer having such a first opening for exposing the cavity and a negative contact zone adjacent to the cavity; electroplating an electrically-conductive layer to the negative contact zone; removing the solder mask layer; forming an insulated layer on the surface of the substrate, the insulated layer having a second opening for exposing the cavity, the electrically-conductive layer, and a positive contact zone adjacent to the cavity; electroplating two solder layers to the positive contact zone and a surface of the electrically-conductive layer, respectively, to make the two solder layers become the positive contact and the negative contact, respectively; fastening the LED chip to the substrate via electrically-conductive adhesive mounted inside the cavity and making; hot-pressing the LED chip to melt the two solder layers to further fasten the positive and negative terminals of the LED chip to the positive and negative contacts; and dispose the fluorescent adhesive layer to the surface of
  • the manufacturing process of the LED chip of the present invention can be completed with one single substrate, so compared with the conventional manufacturing process, the present invention can effectively reduce more production cost and more package size.
  • FIG. 1 is a structural schematic view of a first preferred embodiment of the present invention.
  • FIG. 2 is a flow chart of the first preferred embodiment of the present invention.
  • FIG. 3 is a structural schematic view of a second preferred embodiment of the present invention.
  • an LED package 10 constructed according to a first preferred embodiment of the present invention is formed of a substrate 20 , an LED chip 30 , an insulated layer 40 , and a fluorescent adhesive layer 50 .
  • the detailed descriptions and operations of these elements as well as their interrelations are recited in the respective paragraphs as follows.
  • the substrate 20 includes a fiber prepreg 21 , a first metallic layer 22 , and a second metallic layer 23 in this preferred embodiment.
  • the fiber prepreg 21 is made of a composite material formed of glass fiber and epoxy resin.
  • the first and second metallic layers 22 and 23 are adhered to a front side and a rear side of the fiber prepreg 21 , respectively.
  • the substrate 20 further includes a positive contact 24 and a negative contact 25 .
  • the positive and negative contacts 24 and 25 are mounted to a surface of the first metallic layer 22 to be located on the same side of the substrate 20 .
  • the LED chip 30 is fixed to the surface of the first metallic layer 22 and includes a positive terminal 32 and a negative terminal 34 .
  • the positive terminal 32 is electrically connected with the positive contact 24 of the substrate 20 and the negative terminal 34 is electrically connected with the negative contact 25 of the substrate 20 .
  • the insulated layer 40 is disposed on the surface of the first metallic layer 22 and surrounds the LED chip 30 for providing protection of insulation for the positive and negative contacts 24 and 25 of the substrate 20 and the positive and negative terminals 32 and 34 of the LED chip 30 . It is worth mentioning that the insulated layer 40 is preferably white in color to prevent the insulated layer 40 from absorbing rays generated by the LED chip 30 to further prevent the absorption of the rays from adversely affecting the illumination.
  • the fluorescent adhesive layer 50 is mounted to a surface of the insulated layer 40 and covers the LED chip 30 for enhancing the luminous efficiency of the LED chip 30 .
  • the fluorescent adhesive layer 40 is made of epoxy resin and fluorescent power.
  • a manufacturing process of the LED package 10 includes the following steps.
  • S 7 Mount electrically-conductive adhesive 36 , e.g. silver paste, into the cavity 221 of the substrate 20 , fasten the LED chip 30 to the surface of the first metallic layer 22 via the electrically-conductive adhesive 36 , and make the positive and negative terminals 32 and 34 adhesively connected with the two solder mask layers, respectively.
  • electrically-conductive adhesive 36 e.g. silver paste
  • the package of the LED chip 30 of the present invention can be completed with one single substrate 20 .
  • the LED package 10 of the present invention not only has the relatively simpler process but reduces the production cost and the package size.
  • an LED package 60 constructed according to a second preferred embodiment of the present invention is similar to that of the first preferred embodiment of the present invention, having the primary difference lying in that the substrate 70 of the second preferred embodiment is structurally different from that of the first preferred embodiment.
  • the substrate 70 includes a transparent layer 72 preferably made of polyethylene terephthalate (PET).
  • PET polyethylene terephthalate
  • a metallic layer 74 which is made of a copper foil, is adhered to a front side of the transparent layer 72 .
  • An insulated layer 40 is coated onto a surface of the metallic layer 74 .
  • a fluorescent adhesive layer 50 is coated to a surface of the insulated layer 40 .
  • Another fluorescent adhesive layer 52 is coated to a rear side of the transparent layer 72 and made of epoxy resin and fluorescent powder for make the rays of the LED chip 30 emitted through front and rear sides of the substrate 70 . Since the manufacturing process of the LED package 70 further includes a step of coating the fluorescent adhesive layer 52 to the rear aside of the transparent layer 74 and the other steps are identical to those of the first preferred embodiment, detailed recitation of the manufacturing process of the second preferred embodiment is skipped.
  • the LED package 60 includes the effect of double-sided illumination based on the transparent layer 72 and the two fluorescent adhesive layers 50 and 52 as well as the effects of reduced production cost and decreased package thickness.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Led Device Packages (AREA)
  • Non-Portable Lighting Devices Or Systems Thereof (AREA)

Abstract

A LED package is formed of a substrate, an LED chip, an insulated layer, and a fluorescent adhesive layer. The substrate includes a positive contact and a negative contact. The LED chip is fixed to the substrate and includes a positive terminal and a negative terminal, the former of which is electrically connected with the positive contact and latter is electrically connected with the negative contact. The insulated layer is mounted to the surface of the substrate and surrounds the LED chip. The fluorescent adhesive layer is mounted to a surface of the insulated layer and covers the LED chip. In this way, the LED package can reduce the production cost and the whole size.

Description

    CROSS-REFERENCE TO RELATED APPLICATIONS
  • This application is a Divisional of co-pending application Ser. No. 14/072,245, filed on Nov. 5, 2013, for which priority is claimed under 35 U.S.C. §120; and this application claims priority of Application No. 102132666 filed in Taiwan, R.O.C. on Sep. 10, 2013, under 35 U.S.C. §119; the entire contents of all of which are hereby incorporated by reference.
    • BACKGROUND OF THE INVENTION
  • 1. Field of the Invention
  • The present invention relates generally to a light-emitting diode (LED) and more particularly, to an LED package and its manufacturing process.
  • 2. Description of the Related Art
  • A conventional manufacturing process of an LED package is to fasten an LED chip to a substrate, then to connect multiple wires to between the LED chip and the substrate by wire bonding, and finally to package the LED chip via an encapsulating member (e.g. epoxy resin). However, such package fails to effectively reduce the whole thickness because of the connection of the wires and the requirement for circuit conduction, thus leading to insufficient competitivity in the market while it is applied to the products.
  • To eliminate the aforesaid problem, Taiwan Patent Laid-open No. 20103858 disclosed that LED chips are mounted inside two substrates superposed on each other, and a single-sided or double-sided redistribution layer (RDL) is available, thus reducing the thickness of the whole package. However, the manufacturing process of this package is quite complicated and the effect of thickness reduction is actually limited, so it fails to indeed decrease the production cost and the thickness of the package.
    • SUMMARY OF THE INVENTION
  • The primary objective of the present invention is to provide an LED package capable of decreasing production cost and package thickness.
  • The foregoing objective of the present invention is attained by the LED package formed of a substrate, an LED chip, an insulated layer, and a fluorescent adhesive layer. The substrate includes a positive contact and a negative contact, both of which are located at the same side thereof. The LED chip is located on the substrate and includes a positive terminal and a negative terminal, the former of which is electrically connected with the positive contact and latter is electrically connected with the negative contact. The insulated layer is mounted to the substrate and surrounds the LED chip. The fluorescent adhesive layer is mounted to a surface of the insulated layer and covers the LED chip.
  • The secondary objective of the present invention is to provide a manufacturing process of the LED package that can be effectively simplified.
  • The foregoing objective of the present invention is attained by the manufacturing process including the steps of forming a cavity on a surface of the substrate; forming a solder mask layer on the surface of the substrate, the solder mask layer having such a first opening for exposing the cavity and a negative contact zone adjacent to the cavity; electroplating an electrically-conductive layer to the negative contact zone; removing the solder mask layer; forming an insulated layer on the surface of the substrate, the insulated layer having a second opening for exposing the cavity, the electrically-conductive layer, and a positive contact zone adjacent to the cavity; electroplating two solder layers to the positive contact zone and a surface of the electrically-conductive layer, respectively, to make the two solder layers become the positive contact and the negative contact, respectively; fastening the LED chip to the substrate via electrically-conductive adhesive mounted inside the cavity and making; hot-pressing the LED chip to melt the two solder layers to further fasten the positive and negative terminals of the LED chip to the positive and negative contacts; and dispose the fluorescent adhesive layer to the surface of the insulated layer to make the fluorescent adhesive layer cover the LED chip.
  • In light of the above, the manufacturing process of the LED chip of the present invention can be completed with one single substrate, so compared with the conventional manufacturing process, the present invention can effectively reduce more production cost and more package size.
    • BRIEF DESCRIPTION OF THE DRAWINGS
  • FIG. 1 is a structural schematic view of a first preferred embodiment of the present invention.
  • FIG. 2 is a flow chart of the first preferred embodiment of the present invention.
  • FIG. 3 is a structural schematic view of a second preferred embodiment of the present invention.
    •  DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS
  • Structural features and desired effects of the present invention will become more fully understood by reference to two preferred embodiments given hereunder. However, it is to be understood that these embodiments are given by way of illustration only, thus are not limitative of the claim scope of the present invention.
  • Referring to FIG. 1, an LED package 10 constructed according to a first preferred embodiment of the present invention is formed of a substrate 20, an LED chip 30, an insulated layer 40, and a fluorescent adhesive layer 50. The detailed descriptions and operations of these elements as well as their interrelations are recited in the respective paragraphs as follows.
  • The substrate 20 includes a fiber prepreg 21, a first metallic layer 22, and a second metallic layer 23 in this preferred embodiment. The fiber prepreg 21 is made of a composite material formed of glass fiber and epoxy resin. The first and second metallic layers 22 and 23, each of which is made of a copper foil as an example, are adhered to a front side and a rear side of the fiber prepreg 21, respectively. The substrate 20 further includes a positive contact 24 and a negative contact 25. The positive and negative contacts 24 and 25 are mounted to a surface of the first metallic layer 22 to be located on the same side of the substrate 20.
  • The LED chip 30 is fixed to the surface of the first metallic layer 22 and includes a positive terminal 32 and a negative terminal 34. The positive terminal 32 is electrically connected with the positive contact 24 of the substrate 20 and the negative terminal 34 is electrically connected with the negative contact 25 of the substrate 20.
  • The insulated layer 40 is disposed on the surface of the first metallic layer 22 and surrounds the LED chip 30 for providing protection of insulation for the positive and negative contacts 24 and 25 of the substrate 20 and the positive and negative terminals 32 and 34 of the LED chip 30. It is worth mentioning that the insulated layer 40 is preferably white in color to prevent the insulated layer 40 from absorbing rays generated by the LED chip 30 to further prevent the absorption of the rays from adversely affecting the illumination.
  • The fluorescent adhesive layer 50 is mounted to a surface of the insulated layer 40 and covers the LED chip 30 for enhancing the luminous efficiency of the LED chip 30. The fluorescent adhesive layer 40 is made of epoxy resin and fluorescent power.
  • Referring to FIG. 2, a manufacturing process of the LED package 10 includes the following steps.
  • S1: Etch the surface of the first metallic layer 22 of the substrate 20 to form a cavity 221.
  • S2: Coat a solder mask layer 26 onto the surface of the first metallic layer 22 and make a first opening 262 on the solder mask layer 26 for exposing the cavity 221 and a negative contact zone 27 adjacent to the cavity 221 from the first opening 262.
  • S3: Electroplate an electrically-conductive layer 28, which is preferably made of copper, to the negative contact zone 27.
  • S4: Remove the solder mask layer 26.
  • S5: Coat an insulated layer 40 onto the surface of the first metallic layer 22 and make a second opening on the insulated layer 40 for exposing the cavity 221, the electrically-conductive layer 28, and a positive contact zone 29 adjacent to the cavity 221 from the second opening 42.
  • S6: Electroplate two solder layers, each of which is preferably made of tin-lead alloy, to surfaces of the positive contact zone 29 and the electrically-conductive layer 28, respectively to make the two solder layers become the positive contact 24 and the negative contact 25 of the substrate 20.
  • S7: Mount electrically-conductive adhesive 36, e.g. silver paste, into the cavity 221 of the substrate 20, fasten the LED chip 30 to the surface of the first metallic layer 22 via the electrically-conductive adhesive 36, and make the positive and negative terminals 32 and 34 adhesively connected with the two solder mask layers, respectively.
  • S8: Hot-press the LED chip 30 via a hot-pressing member 38 to melt the solder mask layers to make the positive terminal 32 fixedly connected with the positive contact 24 and make the negative terminal 34 fixedly connected with the negative contact 25 to further complete the electrical connection between the LED chip 30 and the substrate 20.
  • S9: Coat a fluorescent adhesive layer 50 to the surface of the insulated layer 40 and make the fluorescent adhesive layer 50 cover LED chip 30.
  • In light of the steps mentioned above, the package of the LED chip 30 of the present invention can be completed with one single substrate 20. Compared with the conventional wire bonding or the conventional layout of the two superposed substrates and the RDL, the LED package 10 of the present invention not only has the relatively simpler process but reduces the production cost and the package size.
  • Referring to FIG. 3, an LED package 60 constructed according to a second preferred embodiment of the present invention is similar to that of the first preferred embodiment of the present invention, having the primary difference lying in that the substrate 70 of the second preferred embodiment is structurally different from that of the first preferred embodiment. Specifically, the substrate 70 includes a transparent layer 72 preferably made of polyethylene terephthalate (PET). A metallic layer 74, which is made of a copper foil, is adhered to a front side of the transparent layer 72. An insulated layer 40 is coated onto a surface of the metallic layer 74. A fluorescent adhesive layer 50 is coated to a surface of the insulated layer 40. Another fluorescent adhesive layer 52 is coated to a rear side of the transparent layer 72 and made of epoxy resin and fluorescent powder for make the rays of the LED chip 30 emitted through front and rear sides of the substrate 70. Since the manufacturing process of the LED package 70 further includes a step of coating the fluorescent adhesive layer 52 to the rear aside of the transparent layer 74 and the other steps are identical to those of the first preferred embodiment, detailed recitation of the manufacturing process of the second preferred embodiment is skipped.
  • In conclusion, the LED package 60 includes the effect of double-sided illumination based on the transparent layer 72 and the two fluorescent adhesive layers 50 and 52 as well as the effects of reduced production cost and decreased package thickness.

Claims (5)

What is claimed is:
1. An LED package comprising:
a substrate having a positive contact and a negative contact, the positive and negative contacts being located at the same side of the substrate;
an LED chip mounted to the substrate and having a positive terminal and a negative terminal, the positive terminal being electrically connected with the positive contact of the substrate, the negative terminal being electrically connected with the negative contact of the substrate;
an insulated layer mounted to the substrate and surrounding the LED chip; and
a fluorescent adhesive layer mounted to a surface of the insulated layer and covering the LED chip.
2. The LED package as defined in claim 1, wherein the substrate comprises a fiber prepreg, a first metallic layer, and a second metallic layer, the fiber prepreg having a front side and a rear side, the first and second metallic layers being mounted to the front and rear sides of the fiber prepreg, respectively, the positive and negative contacts being mounted to a surface of the first metallic layer.
3. The LED package as defined in claim 1, wherein the substrate comprises a transparent layer and a metallic layer, the transparent layer having a front side and a rear side, the metallic layer being mounted to the front side of the transparent layer; the positive and negative contacts being mounted to the metallic layer.
4. The LED package as defined in claim 3, wherein the transparent layer comprises another florescent layer mounted to the rear side thereof.
5. The LED package as defined in claim 1, wherein the insulated layer is white in color.
US14/611,683 2013-09-10 2015-02-02 Led package and manufacturing process of same Abandoned US20150144982A1 (en)

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TW102132666 2013-09-10
TW102132666A TW201511347A (en) 2013-09-10 2013-09-10 LED package structure and manufacturing method thereof
US14/072,245 US8980659B1 (en) 2013-09-10 2013-11-05 LED package and manufacturing process of same
US14/611,683 US20150144982A1 (en) 2013-09-10 2015-02-02 Led package and manufacturing process of same

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* Cited by examiner, † Cited by third party
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KR102592491B1 (en) * 2018-09-12 2023-10-24 주식회사 루멘스 multi-pixel LED package
CN110267435A (en) * 2019-07-01 2019-09-20 江门市华浦照明有限公司 A kind of production method and flexible circuit board of substrate
WO2022203452A1 (en) * 2021-03-25 2022-09-29 서울바이오시스 주식회사 Light-emitting diode package

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011099384A1 (en) * 2010-02-09 2011-08-18 日亜化学工業株式会社 Light emitting device and method for manufacturing light emitting device
US20150021632A1 (en) * 2013-03-14 2015-01-22 Heilux, Llc Led with multiple bonding methods on flexible transparent substrate

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000216413A (en) * 1999-01-26 2000-08-04 Apic Yamada Corp Bga type transparent plastic semiconductor package
US7049528B2 (en) * 2002-02-06 2006-05-23 Ibiden Co., Ltd. Semiconductor chip mounting wiring board, manufacturing method for same, and semiconductor module
JP4246134B2 (en) * 2003-10-07 2009-04-02 パナソニック株式会社 Semiconductor element mounting method and semiconductor element mounting substrate
US20050116235A1 (en) * 2003-12-02 2005-06-02 Schultz John C. Illumination assembly
JP2007165811A (en) * 2005-12-16 2007-06-28 Nichia Chem Ind Ltd Light emitting device
JPWO2008123020A1 (en) * 2007-03-09 2010-07-15 三洋電機株式会社 Semiconductor device and manufacturing method thereof
KR101365625B1 (en) * 2007-06-21 2014-02-25 서울반도체 주식회사 Bidirectional light emitting diode
JP5426124B2 (en) * 2008-08-28 2014-02-26 株式会社東芝 Semiconductor light emitting device manufacturing method and semiconductor light emitting device
US8237257B2 (en) 2008-09-25 2012-08-07 King Dragon International Inc. Substrate structure with die embedded inside and dual build-up layers over both side surfaces and method of the same
KR20100080423A (en) * 2008-12-30 2010-07-08 삼성엘이디 주식회사 Light emitting device package and method of fabricating thereof
JP5496072B2 (en) * 2010-12-09 2014-05-21 シチズンホールディングス株式会社 Semiconductor light emitting device and manufacturing method thereof
KR101255121B1 (en) * 2011-08-10 2013-04-22 장종진 Lighting emitting diode package and Method for manufacturing the same
JP6102116B2 (en) * 2012-08-07 2017-03-29 日亜化学工業株式会社 Method for manufacturing light emitting device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011099384A1 (en) * 2010-02-09 2011-08-18 日亜化学工業株式会社 Light emitting device and method for manufacturing light emitting device
US20130037842A1 (en) * 2010-02-09 2013-02-14 Motokazu Yamada Light emitting device and method for manufacturing light emitting device
US20150021632A1 (en) * 2013-03-14 2015-01-22 Heilux, Llc Led with multiple bonding methods on flexible transparent substrate

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20210175279A1 (en) * 2019-12-06 2021-06-10 Samsung Display Co., Ltd. Method for aligning a light-emitting element, method for fabricating a display device using the same and display device
US11791369B2 (en) * 2019-12-06 2023-10-17 Samsung Display Co., Ltd. Method for aligning a light-emitting element, method for fabricating a display device using the same and display device

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