CN211529967U - LED flash lamp - Google Patents
LED flash lamp Download PDFInfo
- Publication number
- CN211529967U CN211529967U CN201922096730.7U CN201922096730U CN211529967U CN 211529967 U CN211529967 U CN 211529967U CN 201922096730 U CN201922096730 U CN 201922096730U CN 211529967 U CN211529967 U CN 211529967U
- Authority
- CN
- China
- Prior art keywords
- led chip
- led
- bonding pad
- pad area
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Landscapes
- Led Device Packages (AREA)
Abstract
The utility model provides a LED flash light, include: the upper surface and the lower surface of the base plate are respectively plated with a copper layer and a silver layer, and an N bonding pad area and a P bonding pad area are formed on the upper surface; the vertical structure LED chip is welded on the N bonding pad area on the upper surface of the bottom plate; welding the P electrode of the LED chip to a gold wire in a P bonding pad area on the upper surface of the bottom plate; the white glue layer is arranged on the upper surface of the bottom plate and around the LED chip in a surrounding manner; and the silica gel layer covers the white glue layer and the surface of the LED chip. In application, the LED flash lamp is tightly attached to the lens, so that the central illumination of the LED flash lamp is greatly improved.
Description
Technical Field
The utility model belongs to the technical field of the semiconductor technology and specifically relates to a LED flash light.
Background
The LED lamp has the advantages of low energy consumption, good illumination performance and the like, so that the LED lamp is gradually paid attention to by various industrial departments and is widely applied in practice, and the LED flash lamp is applied to the auxiliary photographic technology and becomes an important tool for supplementing light for the camera.
At present, an LED flash lamp generally adopts a flip chip with 5-surface light emitting, so that the central illumination is insufficient; in addition, the design of the mobile phone shell is not consistent with that of a part of the mobile phone shell, so that a flash lamp light source is far away from the lens, the central illumination is insufficient, and the brightness is lost.
SUMMERY OF THE UTILITY MODEL
In order to overcome the above not enough, the utility model provides a LED flash light effectively solves current flash light and easily causes cell-phone central brightness technical problem such as not enough.
The utility model provides a technical scheme includes:
an LED flash, comprising:
the upper surface and the lower surface of the base plate are respectively plated with a copper layer and a silver layer, and an N bonding pad area and a P bonding pad area are formed on the upper surface;
the vertical structure LED chip is welded on the N bonding pad area on the upper surface of the bottom plate;
welding the P electrode of the LED chip to a gold wire in a P bonding pad area on the upper surface of the bottom plate;
the white glue layer is arranged on the upper surface of the bottom plate and around the LED chip in a surrounding manner; and
and the silica gel layer covers the white glue layer and the surface of the LED chip.
Further preferably, the bottom plate is a ceramic bottom plate, and the thickness of the bottom plate is 0.75 +/-0.1 mm.
Further preferably, the thickness of the copper layers on the upper and lower surfaces of the base plate is 65 + -15 μm.
More preferably, the silica gel layer is mixed with 0.6 mass% of TiO2The thickness is 0.35 plus or minus 0.03 mm.
Further preferably, the LED chip is a single-side light-emitting vertical structure chip.
The utility model provides an among the LED flash light, bottom plate thickness is 0.75 0.1mm, and whole lamp thickness is 1.25mm 0.1mm, solves current inconsistent because of LED flash light and partial cell-phone shell design, and LED flash light source is far away, the not enough technical problem of central illuminance apart from lens, and lens are hugged closely to this LED flash light, have improved the central illuminance of LED flash light greatly. In addition, the LED flash lamp adopts a single-side light-emitting vertical structure chip, the light-emitting angle is about 115 degrees, and compared with the existing LED flash lamp (the light-emitting angle is more than 120 degrees), the loss of central illumination is further reduced. Moreover, a layer of uniform fluorescent film is arranged above the chip, and the color of the chip is uniform; the white glue around the LED chip effectively avoids the problem of blue leakage at the electrode.
Drawings
FIG. 1 is a schematic view of the structure of the coating on the upper and lower surfaces of the bottom plate according to the present invention;
FIG. 2 is a schematic diagram of the structure of the N-pad region where the LED chip and the ESD are soldered on the upper surface of the bottom plate according to the present invention;
FIG. 3 is a schematic view of the electrode welding structure of the LED chip and the ESD of the present invention;
FIG. 4 is a schematic structural view of a white glue layer formed around an LED chip according to the present invention;
fig. 5 is the schematic diagram of the silica gel layer structure pressed above the LED chip in the present invention.
Reference numerals:
the LED chip comprises a substrate 1, an upper coating 2, a lower coating 3, a pad area 21-N, a pad area 22-P, an LED chip 3, an electrode 31-P, an ESD4, a gold wire 5, a white glue layer 6 and a silica gel layer 7.
Detailed Description
In order to more clearly illustrate embodiments of the present invention or technical solutions in the prior art, specific embodiments of the present invention will be described below with reference to the accompanying drawings. It is obvious that the drawings in the following description are only examples of the invention, and that for a person skilled in the art, other drawings and embodiments can be obtained from these drawings without inventive effort.
To the central not enough technical problem of illuminance that current LED flash light exists, the utility model provides a brand-new LED flash light, include: the upper surface and the lower surface of the bottom plate 1 are respectively plated with a copper layer and a silver layer, and an N bonding pad area 21 and a P bonding pad area 22 are formed on the upper surface; a vertical structure LED chip 3 soldered to the N pad area 21 on the upper surface of the base plate 1; welding the LED chip 3P electrode 31 to the gold wire 5 of the P bonding pad area 22 on the upper surface of the bottom plate 1; a white glue layer 6 is arranged on the upper surface of the bottom plate 1 and around the LED chip 3; and the silica gel layer 7 covers the white glue layer 6 and the surface of the LED chip 3.
In the preparation process, the upper and lower surfaces of a substrate 1 (e.g., a ceramic substrate, etc.) are first plated to form an upper plating layer 2 and a lower plating layer 3, and an N pad region 21 and a P pad region 22 are formed on the upper surface of the substrate 1, as shown in fig. 1. The upper plating layer 2 and the lower plating layer 3 respectively include a copper layer and a silver layer (the upper surface and the lower surface of the base plate 1 are plated with the copper layer and then are further plated with the silver layer), specifically, the thickness of the base plate 1 is 0.75 + -0.1 mm, the thickness of the copper layer is 65 + -15 μm, the thickness of the silver layer is 0.06 μm, and the thickness of the whole plate is 0.9mm + -0.05 mm. Compared with the conventional base plate 1 with the thickness of 0.38mm, the base plate 1 with the thickness of 0.75 +/-0.1 mm improves the heat dissipation performance, ensures that the LED flash lamp can cling to the lens, and improves the central illumination. In addition, the copper material has good heat conduction and electric conduction performance, and the silver surface can improve the reflectivity of the front surface of the bonding pad (the N bonding pad region 21 and the P bonding pad region 22).
Then, the vertical LED chip 3 and ESD4 (electrostatic discharge protection circuit) are soldered to the N pad region 21 on the upper surface of the base plate 1 with a silver paste adhesive and cured to form an electrical and thermal connection between the LED chip 3 and the base plate 1, as shown in fig. 2. The LED chip 3 is a single-side light-emitting white LED chip 3 with a vertical structure, and as shown in the figure, the surface of the LED chip is coated with a fluorescent glue layer or adhered with a fluorescent film (the fluorescent module is slightly larger than the LED chip 3 to ensure that blue light is not leaked), and the P electrode 31 is exposed.
Then, two gold wires 5(1.25mil) are LED out from the pad area 22 of the bottom board P, and are respectively welded with the electrodes of the LED chip 3 and the ESD4, and the highest point of the gold wire 5 is close to the height of the fluorescent glue layer or the fluorescent film attached on the surface of the LED chip 3, as shown in fig. 3.
Then, respectively scribing a white glue along the transverse direction of the LED chip 3 to form a white glue layer 6 around the LED chip 3 and baking, as shown in fig. 4, in the process, the amount of the white glue is controlled to just cover the electrode and simultaneously not to overflow to the fluorescent glue layer or the upper part of the fluorescent film, so as to prevent blue leakage at the electrode.
Finally, as shown in fig. 5, a layer of TiO doped with 0.6 mass% was laminated on the LED chip 32The thickness of the silica gel layer 7 above the bottom plate 1 is controlled to be about 0.35mm, the gold thread 5 is protected, and the whole lamp is formed after cuttingAnd the height of the LED flashlight is 1.25mm +/-0.1 mm. In one example, the LED flash has a gauge of 2.04 × 1.64 × 1.25 mm.
It should be noted that the above embodiments can be freely combined as necessary. The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, a plurality of modifications and decorations can be made without departing from the principle of the present invention, and these modifications and decorations should also be regarded as the protection scope of the present invention.
Claims (4)
1. An LED flash, comprising:
the upper surface and the lower surface of the base plate are respectively plated with a copper layer and a silver layer, and an N bonding pad area and a P bonding pad area are formed on the upper surface;
the vertical structure LED chip is welded on the N bonding pad area on the upper surface of the bottom plate;
welding the P electrode of the LED chip to a gold wire in a P bonding pad area on the upper surface of the bottom plate;
the white glue layer is arranged on the upper surface of the bottom plate and around the LED chip in a surrounding manner; and
and the silica gel layer covers the white glue layer and the surface of the LED chip.
2. The LED flash of claim 1 wherein the base plate is a ceramic base plate having a thickness of 0.75 ± 0.1 mm.
3. The LED flash of claim 1 wherein the copper layers on the upper and lower surfaces of the base plate have a thickness of 65 ± 15 μm.
4. The LED flash of claim 1, 2 or 3 wherein the LED chip is a single-sided light-emitting vertical structure chip.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201922096730.7U CN211529967U (en) | 2019-11-29 | 2019-11-29 | LED flash lamp |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201922096730.7U CN211529967U (en) | 2019-11-29 | 2019-11-29 | LED flash lamp |
Publications (1)
Publication Number | Publication Date |
---|---|
CN211529967U true CN211529967U (en) | 2020-09-18 |
Family
ID=72464225
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201922096730.7U Active CN211529967U (en) | 2019-11-29 | 2019-11-29 | LED flash lamp |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN211529967U (en) |
-
2019
- 2019-11-29 CN CN201922096730.7U patent/CN211529967U/en active Active
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5906038B2 (en) | Light emitting element | |
CN104766916A (en) | LED integrated light source adopting inverted blue light chip for packaging | |
CN102032483B (en) | Light-emitting diode (LED) plane light source | |
JPWO2011129202A1 (en) | Light emitting device and method for manufacturing light emitting device | |
TW201101548A (en) | LED package structure with a plurality of standby pads for increasing wire-bonding yield and method for manufacturing the same | |
CN203983324U (en) | A kind of LED integrated optical source that adopts the encapsulation of upside-down mounting blue chip | |
TW201511347A (en) | LED package structure and manufacturing method thereof | |
JP2007266358A (en) | Light-emitting device and illuminator | |
CN213546315U (en) | Light-emitting unit | |
CN203850296U (en) | LED integrated light source adopting MCPCB substrate | |
KR100699161B1 (en) | Light emitting device package and method for manufacturing the same | |
CN206022420U (en) | A kind of packaging of flip LED chips and down straight aphototropism mode set | |
CN107123721B (en) | LED packaging structure with lens and packaging method | |
US20140239334A1 (en) | Package structure of light emitting diode | |
CN112242473A (en) | LED filament light source, manufacturing method thereof and lamp | |
CN202332845U (en) | LED (Light Emitting Diode) plane light source with high luminous efficiency | |
CN211529967U (en) | LED flash lamp | |
CN104766856A (en) | LED integrated light source adopting MCPCB substrate and production method thereof | |
CN207602620U (en) | A kind of stent for LED encapsulation | |
CN102468293A (en) | Polycrystal packaging structure directly and electrically connected to alternating-current power supply | |
JP2012079817A (en) | Light-emitting device and method of manufacturing light-emitting device | |
CN212342657U (en) | Self-adaptive 360-degree full-circumference light emitting diode and light emitting device | |
CN209912892U (en) | COB light source | |
CN201243024Y (en) | Non-throwing encapsulation structure of LED | |
US7531846B2 (en) | LED chip packaging structure |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
GR01 | Patent grant | ||
GR01 | Patent grant | ||
CP01 | Change in the name or title of a patent holder |
Address after: 330096 No. 699, Aixi Hubei Road, Nanchang High-tech Development Zone, Jiangxi Province Patentee after: Jingneng optoelectronics Co.,Ltd. Address before: 330096 No. 699, Aixi Hubei Road, Nanchang High-tech Development Zone, Jiangxi Province Patentee before: LATTICE POWER (JIANGXI) Corp. |
|
CP01 | Change in the name or title of a patent holder |