CN202332845U - LED (Light Emitting Diode) plane light source with high luminous efficiency - Google Patents
LED (Light Emitting Diode) plane light source with high luminous efficiency Download PDFInfo
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- CN202332845U CN202332845U CN2011204841101U CN201120484110U CN202332845U CN 202332845 U CN202332845 U CN 202332845U CN 2011204841101 U CN2011204841101 U CN 2011204841101U CN 201120484110 U CN201120484110 U CN 201120484110U CN 202332845 U CN202332845 U CN 202332845U
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/49105—Connecting at different heights
- H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
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Abstract
The utility model relates to the technical field of LED (Light Emitting Diode) and specially relates to an LED plane light source with high luminous efficiency. The LED plane light source is characterized in that an insulating layer and a circuit substrate are arranged on a metal base plate from bottom to top, wherein the circuit substrate is formed by a patterned high reflecting electrode layer; the insulating layer is formed by paving a silicon nitride pressure-resisting insulating layer above an aluminum nitride transition insulating layer; and the patterned high reflecting electrode layer is formed by paving a patterned conductive reflecting layer above a patterned conductive layer. Compared with the prior art, the LED plane light source has the advantages of high luminous efficiency, high heat conduction, high reliability, simple connecting technology of external circuit, and simple technology for directly patterning the electrode layer.
Description
Technical field
The utility model relates to the LED technical field, specifically a kind of high light efficiency LED planar light source.
Background technology
Along with the development of technical field of semiconductor illumination white light LEDs, LED has begun to be applied in the general illumination field.Receive state-of-the art restriction, the luminous flux of most of single LEDs chips is lower than 400lm, and in the practical application, each LED light fixture must adopt several even hundreds of LEDs chip to carry out integrated.Comparatively traditional method is a plurality of single encapsulated LED device surfaces to be mounted on carry out simple combination on the PCB, and a kind of novel planar light source technology is then with direct integrated being encapsulated on the PCB of plurality of LEDs chip.Compare, the planar light source processing step is few, and dazzle is low, and heat dissipation path also is superior to single LEDs surface mount, with a kind of mainstream technology route that progressively becomes semiconductor lighting.
Current planar light source mainly selects for use the higher metal-cored PCB of conductive coefficient as circuit substrate.The metal-cored PCB of main flow adopts sheet metals such as aluminium, aluminium alloy, copper, iron, molybdenum, silicon steel as metal substrate; With modified epoxy, PI resin, PPO resin etc. as insulating medium layer; With electrolytic copper foil, rolled copper foil etc. as Copper Foil; Adopt photoetching process that the circuit that designs is formed the photoresistance pattern at copper foil surface, adopt wet chemical method etching Copper Foil to form circuit then.Copper is easy to by autoxidation at air, in order to satisfy the requirement of later welded technology, must protect copper.The tradition led support is to electroplate not only resistance to oxidation but also have the very silver of high reflectance at copper foil surface, but the Copper Foil of metal-cored PCB is discontinuous after graphical, so can't adopt electroplating technology, main flow technology is that chemical plating is sunk nickel, turmeric then earlier at present.Wherein nickel prevents that as the barrier layer copper is to diffusion into the surface; Gold utensil has good inertia, can keep the surface not oxidized, but the reflectivity of gold causes current LED planar light source light efficiency generally lower far below silver.
Patent of invention 200910037957.2 discloses a kind of highly effective heat radiation light source substrate with utility model patent 200920052764.X, and patent of invention 200910038125.2 discloses the high-efficiency radiating LED illumination light source that adopts this substrate to make with utility model patent 200920053129.3.Above-mentioned patent all adopts the technology of aluminium film as electrode layer, because the reflectivity of aluminium is superior to gold, so the efficient of this novel planar light source can be superior to adopting the planar light source of traditional metal core PCB encapsulation.But the aerial stability of aluminium is lower than silver, and can't use soldering technology to be connected with external circuit, so still there is the space of improvement in this technology.
Summary of the invention
The purpose of the utility model is the deficiency that overcomes prior art; The high reflective conductive layer of employing fine silver has significantly promoted the reflectivity of substrate; Thereby obtained the LED planar light source of high light efficiency; And the plurality of LEDs chip directly is welded on the metal-cored PCB, pours into afterwards and after the silica gel that contains fluorescent material also solidifies chip is protected.
For realizing above-mentioned purpose; Design a kind of high light efficiency LED planar light source; Comprise insulating barrier, patterned high reflection electrode layer, led chip module; It is characterized in that: establish insulating barrier, patterned high reflection electrode layer on the metal substrate from bottom to up successively; And fill out at the hollow out place of the figure of patterned high reflection electrode layer and to establish high reflective isolating layer and form circuit substrate, on patterned high reflection electrode layer, being provided with the led chip module, the top of patterned high reflection electrode layer also adopts silica gel protected layer to cover the led chip module; End is made as exit respectively about patterned high reflection electrode layer, and left and right two exits are positioned at outside the silica gel protected layer region as the positive pole and the negative pole of circuit substrate respectively; Described insulating barrier is formed by above aluminium nitride transition insulating barrier, covering the withstand voltage insulating barrier of silicon nitride; Described patterned high reflection electrode layer constitutes by above graphical albronze conductive layer, covering the patterned conductive reflector, and graphical albronze conductive layer is consistent with the shape in patterned conductive reflector.
Described led chip module adopts lead to be connected by initialization circuit by some led chips and patterned conductive reflector to be formed.
Described led chip adopts positive assembling structure or adopts inverted structure or adopt top-bottom electrode structures.
The positive pole of described circuit substrate and negative pole zone are covered with silver-colored film respectively.
The utility model is compared with prior art, has following advantage:
1, high light efficiency: circuit substrate metallized area field surface has adopted the patterned conductive reflector of reflectivity greater than 92% fine silver; Not metallized area filled contain the high reflection grain of nanometer macromolecular material as high reflective isolating layer; The reflectivity of this high reflective isolating layer is also greater than 92%; Make circuit substrate integral body have very high reflectivity, thereby significantly promoted the light efficiency of LED planar light source;
2, high heat conduction: metal-cored PCB has adopted the insulating barrier that is made up of aluminium nitride and silicon nitride, and wherein the intrinsic conductive coefficient of aluminium nitride is up to 280W/mK, and the conductive coefficient of silicon nitride is 20W/mK, the insulating layer material that is all adopted far above traditional metal core PCB; The high voltage endurance that has of silicon nitride simultaneously keeps that thickness of insulating layer is thinned to below the 6um under the identical withstand voltage situation, is lower than 1/10 of original thickness; Raising of insulating barrier conductive coefficient and thickness significantly attenuate make the metal-cored PCB heat conductivility of modified model obtain remarkable lifting; The LED planar light source has the better capacity of heat transmission, and this makes the life-span of led chip obtain ensureing and helping further improving the luminous efficiency of LED;
3, high reliability: consider that there is ELECTROMIGRATION PHENOMENON in fine aluminium; Under DC driven, work for a long time and have integrity problem; Graphical albronze conductive layer selects copper content not to be higher than 5% aluminium copper can improve this problem greatly, has improved the reliability of conductive layer and LED planar light source;
4, external circuit connection technology is simple: soldering is connecting circuit a kind of mode the most commonly used; Silver has very good tin solderability; The extraction electrode surface of this LED planar light source also covers silver-colored film, so this LED planar light source is easy to be connected with external circuit through soldering;
5, electrode layer is directly graphical, and technology is simple, aspect electrode patternization; Adopt hard mask directly to form preset pattern, need not to use the wet processing in the conventional art, technology is simple; Environmental protection helps reducing the price of semiconductor lighting end product, and expedite product is promoted.
Description of drawings
Fig. 1 is a kind of structural representation of the utility model embodiment 1.
Fig. 2 is an A-A cut-away view among Fig. 1.
Fig. 3 be in the utility model embodiment 1 making step behind the patterned high reflection electrode layer of withstand voltage insulating barrier 4 surface preparation of silicon nitride formed structural representation.
Fig. 4 is the formed structural representation of the subsequent step of Fig. 3.
Fig. 5 is the formed structural representation of the subsequent step of Fig. 4.
Fig. 6 is a kind of structural representation of the utility model embodiment 2.
Fig. 7 is an A-A cut-away view among Fig. 6.
Fig. 8 is a kind of structural representation of the utility model embodiment 3.
Fig. 9 is an A-A cut-away view among Fig. 8.
Embodiment
Combine accompanying drawing that the utility model is done explanation further at present.
Referring to Fig. 1～Fig. 5; The high light efficiency LED planar light source of present embodiment is used as the bulb lamp light source; Comprise led chip module, metal substrate 2, patterned high reflection electrode layer; Led chip 1 in the led chip module adopts the positive cartridge chip of blue light of emission wavelength 460nm, and metal substrate 2 adopts the aluminium base of thickness 1mm.
The circuit layout that present embodiment designed is referring to Fig. 1; Patterned high reflection electrode layer is designed to 6 separate graphical high reflection electrode layer unit modules in this example; The led chip module adopts 45 LEDs chips 1 to be divided into 5 chipsets with 9 every group; On continuous 5 graphical high reflection electrode layer unit modules from left to right a led chip group is set respectively; Adopt lead 8 series connection between the led chip 1 in each led chip group; The positive pole of a set foremost led chip 1 adopts lead 8 to be connected with the corresponding region of the graphical high reflection electrode layer unit module that belongs to separately respectively on each graphical high reflection electrode layer unit module; The negative pole of a led chip 1 of set rearmost end also adopts the rear end of the contiguous graphical high reflection electrode layer unit module in lead 8 and its right side to be connected respectively on each graphical high reflection electrode layer unit module, thereby realizes the syndeton of the full series connection of 5 led chip groups.Lead described in the present embodiment 8 is selected the gold thread of diameter 25um.The top of patterned high reflection electrode layer also adopts silica gel protected layer 9 to cover the led chip module.Said silica gel protected layer 9 adopts the silica gel that contains fluorescent material, referring to Fig. 2.
4 graphical high reflection electrode layer unit modules in the middle of the front end of the leftmost side in the patterned high reflection electrode layer and two graphical high reflection electrode layer unit modules of the rightmost side protrudes in respectively; Thereby form left and right two exits respectively as the anodal 6a and the negative pole 6b of entire circuit substrate; The both positive and negative polarity 6a of circuit substrate, 6b are positioned at outside silica gel protected layer 9 zone; And the anodal 6a of circuit substrate and negative pole 6b zone are covered with silver-colored film, make the high light efficiency LED planar light source that makes be easy to be connected with external circuit through soldering.
Referring to Fig. 2; Deposit the insulating barrier of high heat conduction on the metal substrate 2; The insulating barrier of this high heat conduction is formed by above aluminium nitride transition insulating barrier 3, covering the withstand voltage insulating barrier 4 of silicon nitride; Described aluminium nitride transition insulating barrier 3 is that the thickness of employing plasma nitridation process manufacturing is the aln layer of 0.1um, intrinsic conductive coefficient 280 W/mK, and aluminium nitride transition insulating barrier 3 all has extraordinary tack with metal substrate 2 and the withstand voltage insulating barrier 4 of silicon nitride; Described silicon nitride is withstand voltage, and insulating barrier 4 is that the thickness that adopts pecvd process to deposit is the silicon nitride layer of 3um, intrinsic conductive coefficient 20W/mK.
Deposit patterned high reflection electrode layer on silicon nitride in the said insulating barrier the is withstand voltage insulating barrier 4; Patterned high reflection electrode layer constitutes by above graphical albronze conductive layer 5, covering 6 in patterned conductive reflector; Graphical albronze conductive layer 5 is consistent with the shape in patterned conductive reflector 6; Said graphical albronze conductive layer 5 is the aluminium copper films that adopt magnetron sputtering, thickness 3um, and wherein the copper content in the aluminium copper film is 2%; Described patterned conductive reflector 6 is the silver-colored films that adopt magnetron sputtering, and thickness is 150nm.Filled high reflective isolating layer 7 at the hollow out place of patterned high reflection electrode layer; Said high reflective isolating layer 7 is the macromolecular materials of high reflection nano particle that adopted doping that silk-screen printing technique prints; The nano particle of high reflection nano particle selective oxidation titanium and silica nucleocapsid structure, macromolecular material is selected polyurethane.
Referring to Fig. 3～Fig. 5, be that example is explained further with the manufacturing process steps of present embodiment:
1, the making of metal substrate preliminary treatment and aluminium nitride transition insulating barrier: metal substrate 2 is put into vacuum chamber, and using plasma cleans.Metal substrate 2 adopts aluminium sheet in the present embodiment, directly adopts Ar/N
2Hybrid plasma forms aluminium nitride transition insulating barrier 3 when metal substrate 2 is cleaned; Metal substrate for other material; Then adopt the Ar plasma that metal substrate 2 is cleaned, adopt the mode of magnetron sputtering to deposit one deck aluminium nitride transition insulating barrier 3 then.
2, the withstand voltage insulating barrier of silicon nitride is made: the metal substrate 2 that will be coated with aluminium nitride transition insulating barrier 3 transfers to the pecvd process cavity under vacuum state; Adopt silane and ammonia as source of the gas; Under the effect of rf electric field, produce low temperature plasma; The silicon nitride film of deposition low stress forms the withstand voltage insulating barrier 4 of silicon nitride.The back directly deposits thermal conductivity high aluminium nitride transition insulating barrier 3 and the withstand voltage insulating barrier 4 of silicon nitride because metal substrate 2 disposes, and does not destroy vacuum environment in these a few step operation links, and the interface between the rete is better, helps improving adhesive force.
3, the making of patterned high reflection electrode layer: according to set line pattern making and the metal hard mask plate of metal substrate 2 dimension scale 1:1; Send into vacuum chamber after being fixed on this metal hard mask plate on the metal substrate 2 that is coated with the withstand voltage insulating barrier 4 of silicon nitride; Adopt magnetron sputtering or vacuum evaporation technology deposition of aluminum copper alloy and silver successively on the withstand voltage insulating barrier 4 of silicon nitride, form graphical albronze conductive layer 5 and patterned conductive reflector 6 respectively.After metal substrate 2 taken out from vacuum chamber together with the metal hard mask plate, take off the metal hard mask plate and promptly on metal substrate 2, make patterned high reflection electrode layer, the cross-section structure of accomplishing after this step is as shown in Figure 3.
4, fill high reflective isolating layer: owing to being the withstand voltage insulating barrier 4 of silicon nitride at the hollow out place of patterned high reflection electrode layer, this regional reflex rate is lower.Therefore, can adopt the mixed macromolecular material of high reflection nano material of silk-screen printing technique printing to form high reflective isolating layer 7 in these not metallized zones, thereby form the circuit substrate in the utility model.One or several mixing in the titanium oxide of the preferred nanostructure of high reflection nano material, aluminium oxide, silica, the zinc oxide or the combination of above material nucleocapsid structure, a kind of in macromolecular material preferred epoxy, PI resin, PPO resin, the polyurethane.The thickness of this high reflective isolating layer 7 is identical with patterned high reflection electrode layer, and it is as shown in Figure 4 to accomplish this step cross-section structure afterwards.
5, solid crystalline substance of led chip and bonding wire: adopt transparent silica gel that led chip 1 is bonded in the precalculated position on the patterned conductive reflector 6 earlier; Adopt lead 8 to connect led chip and patterned conductive reflector 6 respectively then according to the predetermining circuit layout; Realize the electrical connection of led chip, it is as shown in Figure 5 to accomplish this step cross-section structure afterwards.
6, pour into silica gel protected layer: for white light LEDs; The silica gel that will contain fluorescent material covers on the patterned conductive reflector 6 to envelope led chip 1 and lead 8; But need expose as end about the patterned high reflection electrode layer of circuit substrate positive electrode 6a and negative electrode 6b; Thereby be convenient to be connected, form silica gel protected layer 9 through heating cure afterwards with external circuit.On the one hand led chip 1 and lead 8 are formed protection for silica gel protected layer 9, through fluorescent material the blue light that led chip 1 sends is changed into white light on the other hand, it is as shown in Figure 2 to accomplish this step cross-section structure afterwards.
Referring to Fig. 6 and Fig. 7, led chip 1 is selected the chip of top-bottom electrode structures for use in the high light efficiency LED planar light source of present embodiment.The circuit layout that present embodiment designed is referring to Fig. 6, and patterned high reflection electrode layer is designed to 32 separate graphical high reflection electrode layer unit modules in this example, the corresponding 1 LEDs chip 1 of each module.The bottom electrode of led chip 1 is bonded in it on the high reflection electrode layer unit module of graph of a correspondenceization through silver paste, and the silver slurry plays fixation on the one hand, is equivalent to lead 8 on the other hand and realizes the bottom electrodes of led chip 1 and being electrically connected of high reflection electrode layer.The top electrode of led chip 1 then adopts lead 8 to be connected with adjacent graphical high reflection electrode layer unit module, realizes full series connection according to circuit layout 32 chips.
Manufacturing process steps in this example and last embodiment making step are basic identical.
Referring to Fig. 8 and Fig. 9, led chip 1 is selected the led chip of inverted structure for use in the high light efficiency LED planar light source of present embodiment.The circuit layout that present embodiment designed is referring to Fig. 8; Patterned high reflection electrode layer is designed to 33 separate graphical high reflection electrode layer unit modules in this example; The soldered ball that be equivalent to lead 8 of every LEDs chip 1 through the bottom is across on neighbouring two separate graphical high reflection electrode layer unit modules, and 32 chips are realized full series connection.
Above-described only is some execution modes of the utility model, and the quantity of led chip 1, the layout of patterned high reflection electrode layer and connection in series-parallel be flexible design as required.Silica gel protected layer 9 can adopt the transparent silica gel that does not contain fluorescent material to obtain the LED planar light source of intrinsic look; Led chip 1 can select the intrinsic wavelength of 460nm, 525nm, 595nm, 624nm to come to obtain respectively blueness, green, yellow, red LED planar light source; Also can select the intrinsic wavelength of 280nm, 380nm, 405nm to obtain the ultraviolet LED planar light source, the combination of led chip 1 that can also be through some different wave lengths obtains the light of specific wavelength.
Adopt technique for vacuum coating to form patterned high reflection electrode layer among the embodiment of the utility model on metal substrate 2 surfaces; And filled high reflective isolating layer 7 at the hollow out place of patterned high reflection electrode layer; Significantly promoted the reflectivity of circuit substrate, thereby the light efficiency of LED planar light source is significantly improved.Simultaneously, compared to existing metal-cored PCB, the utility model insulating barrier conductive coefficient is higher, and thickness significantly reduces, and has so significantly promoted the heat dispersion of circuit substrate, to promoting light efficiency certain effect is arranged also.Under the situation of using identical materials such as led chip, silica gel and fluorescent material, the high light efficiency LED planar light source of the utility model uses existing metal-cored PCB encapsulated LED planar light source light efficiency can promote 20%.In addition, aspect production technology, the utility model no longer needs the wet processing in the conventional art, environmental protection more.
Claims (4)
1. high light efficiency LED planar light source; Comprise insulating barrier, patterned high reflection electrode layer, led chip module; It is characterized in that: establish insulating barrier, patterned high reflection electrode layer on the metal substrate (2) from bottom to up successively; And fill out at the hollow out place of the figure of patterned high reflection electrode layer and to establish high reflective isolating layer (7) and form circuit substrate; On patterned high reflection electrode layer, be provided with the led chip module; The top of patterned high reflection electrode layer also adopts silica gel protected layer (9) to cover the led chip module, and end is made as exit respectively about patterned high reflection electrode layer, and left and right two exits are positioned at outside silica gel protected layer (9) zone as the positive pole (6a) and the negative pole (6b) of circuit substrate respectively; Described insulating barrier covers the withstand voltage insulating barrier of silicon nitride (4) by the top at aluminium nitride transition insulating barrier (3) and forms; Described patterned high reflection electrode layer covers patterned conductive reflector (6) by the top at graphical albronze conductive layer (5) and constitutes, and graphical albronze conductive layer (5) is consistent with the shape of patterned conductive reflector (6).
2. a kind of high light efficiency LED planar light source as claimed in claim 1 is characterized in that: described led chip module adopts leads (8) to be connected by initialization circuit by some led chips (1) and patterned conductive reflector (6) to be formed.
3. a kind of high light efficiency LED planar light source as claimed in claim 2 is characterized in that: described led chip (1) adopts positive assembling structure or adopts inverted structure or adopt top-bottom electrode structures.
4. a kind of high light efficiency LED planar light source as claimed in claim 1 is characterized in that: positive pole of described circuit substrate (6a) and negative pole (6b) zone are covered with silver-colored film respectively.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011204841101U CN202332845U (en) | 2011-11-29 | 2011-11-29 | LED (Light Emitting Diode) plane light source with high luminous efficiency |
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| Application Number | Priority Date | Filing Date | Title |
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| CN2011204841101U CN202332845U (en) | 2011-11-29 | 2011-11-29 | LED (Light Emitting Diode) plane light source with high luminous efficiency |
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| CN202332845U true CN202332845U (en) | 2012-07-11 |
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| CN2011204841101U Expired - Fee Related CN202332845U (en) | 2011-11-29 | 2011-11-29 | LED (Light Emitting Diode) plane light source with high luminous efficiency |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107152614A (en) * | 2017-07-06 | 2017-09-12 | 山东中微光电子有限公司 | A kind of LED area light source |
| CN108511430A (en) * | 2018-04-28 | 2018-09-07 | 中国人民大学 | A kind of crystallo-luminescence paster LED lamp bead and preparation method thereof |
| WO2019210637A1 (en) * | 2018-05-02 | 2019-11-07 | 惠州市华星光电技术有限公司 | Backlight module and liquid crystal display apparatus |
| US10746916B2 (en) | 2018-05-02 | 2020-08-18 | Huizhou China Star Optoelectronics Technology Co., Ltd. | Backlight module and LCD device |
-
2011
- 2011-11-29 CN CN2011204841101U patent/CN202332845U/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107152614A (en) * | 2017-07-06 | 2017-09-12 | 山东中微光电子有限公司 | A kind of LED area light source |
| CN108511430A (en) * | 2018-04-28 | 2018-09-07 | 中国人民大学 | A kind of crystallo-luminescence paster LED lamp bead and preparation method thereof |
| WO2019210637A1 (en) * | 2018-05-02 | 2019-11-07 | 惠州市华星光电技术有限公司 | Backlight module and liquid crystal display apparatus |
| US10746916B2 (en) | 2018-05-02 | 2020-08-18 | Huizhou China Star Optoelectronics Technology Co., Ltd. | Backlight module and LCD device |
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Granted publication date: 20120711 Termination date: 20151129 |