JP2008166311A - 半導体発光素子及び半導体発光装置 - Google Patents
半導体発光素子及び半導体発光装置 Download PDFInfo
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- JP2008166311A JP2008166311A JP2006350660A JP2006350660A JP2008166311A JP 2008166311 A JP2008166311 A JP 2008166311A JP 2006350660 A JP2006350660 A JP 2006350660A JP 2006350660 A JP2006350660 A JP 2006350660A JP 2008166311 A JP2008166311 A JP 2008166311A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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Abstract
【解決手段】第1及び第2の主面を有し発光層を含む半導体積層体と、前記発光層から放出される第1の波長の光を吸収し前記第1の波長とは異なる第2の波長の光を放射する蛍光体粒子と、前記蛍光体粒子を包んで前記半導体積層体の前記第1の主面上に設けられ、前記第1及び第2の波長の光に対して透光性を有し、前記蛍光体粒子の少なくとも一部を含む凸部を表面に有するコーティング層と、を備えたことを特徴とする半導体発光素子が提供される。
【選択図】図1
Description
Claims (5)
- 第1及び第2の主面を有し発光層を含む半導体積層体と、
前記発光層から放出される第1の波長の光を吸収し前記第1の波長とは異なる第2の波長の光を放射する蛍光体粒子と、
前記蛍光体粒子を包んで前記半導体積層体の前記第1の主面上に設けられ、前記第1及び第2の波長の光に対して透光性を有し、前記蛍光体粒子の少なくとも一部を含む凸部を表面に有するコーティング層と、
を備えたことを特徴とする半導体発光素子。 - 第1及び第2の主面を有し発光層を含む半導体積層体と、
前記発光層から放出される第1の波長の光を吸収し前記第1の波長とは異なる第2の波長の光を放射する蛍光体粒子と、
前記半導体積層体の前記第1の主面上に設けられ、前記第1及び第2の波長の光に対して透光性を有し、前記蛍光体粒子と前記蛍光体粒子の表面に被覆された被覆層とを有する凸部を表面に有するコーティング層と、
を備えたことを特徴とする半導体発光素子。 - 前記半導体積層体の前記第2の主面側に設けられた基板と、
前記基板と前記半導体積層体との間に設けられた反射膜と、
をさらに備えたことを特徴とする請求項1または2に記載の半導体発光素子。 - 請求項1〜3のいずれかに1つに記載の半導体発光素子と、
絶縁性基板と、
前記絶縁性基板上に設けられたパターン配線と、
少なくとも前記半導体発光素子を覆う透明樹脂と、
を備え、
前記半導体発光素子は、前記パターン配線上に接着され、
前記透明樹脂は、前記コーティング層と比較して小さいかまたは等しい屈折率を有することを特徴とする半導体発光装置。 - 請求項1〜3のいずれか1つに記載の半導体発光素子と、
絶縁性基板と、
前記絶縁性基板上に設けられたパターン配線と、
前記絶縁性基板に接着された透明カバーと、
を備え、
前記半導体発光素子は、前記パターン配線上に接着され、
前記コーティング層を介して取り出された前記第1及び第2の波長の光は、前記透明カバーを介して外部へ放射されることを特徴とする半導体発光装置。
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JP2006350660A JP2008166311A (ja) | 2006-12-26 | 2006-12-26 | 半導体発光素子及び半導体発光装置 |
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JP2006350660A JP2008166311A (ja) | 2006-12-26 | 2006-12-26 | 半導体発光素子及び半導体発光装置 |
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JP2008166311A true JP2008166311A (ja) | 2008-07-17 |
JP2008166311A5 JP2008166311A5 (ja) | 2009-08-13 |
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011222852A (ja) * | 2010-04-13 | 2011-11-04 | Nitto Denko Corp | 光半導体装置 |
KR20120075432A (ko) * | 2010-12-28 | 2012-07-06 | 니치아 카가쿠 고교 가부시키가이샤 | 발광 장치 |
JP2013062297A (ja) * | 2011-09-12 | 2013-04-04 | Rohm Co Ltd | 半導体発光装置およびその製造方法 |
US20160233387A1 (en) * | 2013-10-15 | 2016-08-11 | Sharp Kabushiki Kaisha | Light-emitting device and method for producing the same |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005191514A (ja) * | 2003-10-31 | 2005-07-14 | Toyoda Gosei Co Ltd | 発光素子および発光装置 |
JP2006324685A (ja) * | 2002-07-08 | 2006-11-30 | Nichia Chem Ind Ltd | 窒化物半導体素子の製造方法及び窒化物半導体素子 |
-
2006
- 2006-12-26 JP JP2006350660A patent/JP2008166311A/ja active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006324685A (ja) * | 2002-07-08 | 2006-11-30 | Nichia Chem Ind Ltd | 窒化物半導体素子の製造方法及び窒化物半導体素子 |
JP2005191514A (ja) * | 2003-10-31 | 2005-07-14 | Toyoda Gosei Co Ltd | 発光素子および発光装置 |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011222852A (ja) * | 2010-04-13 | 2011-11-04 | Nitto Denko Corp | 光半導体装置 |
KR20120075432A (ko) * | 2010-12-28 | 2012-07-06 | 니치아 카가쿠 고교 가부시키가이샤 | 발광 장치 |
JP2016178344A (ja) * | 2010-12-28 | 2016-10-06 | 日亜化学工業株式会社 | 発光装置 |
KR102087250B1 (ko) | 2010-12-28 | 2020-03-10 | 니치아 카가쿠 고교 가부시키가이샤 | 발광 장치 |
JP2013062297A (ja) * | 2011-09-12 | 2013-04-04 | Rohm Co Ltd | 半導体発光装置およびその製造方法 |
US20160233387A1 (en) * | 2013-10-15 | 2016-08-11 | Sharp Kabushiki Kaisha | Light-emitting device and method for producing the same |
JPWO2015056590A1 (ja) * | 2013-10-15 | 2017-03-09 | シャープ株式会社 | 実装基板、発光装置及び発光装置の製造方法 |
US9806236B2 (en) | 2013-10-15 | 2017-10-31 | Sharp Kabushiki Kaisha | Light-emitting device and method for producing the same |
TWI624086B (zh) * | 2013-10-15 | 2018-05-11 | Sharp Kk | Light emitting device and method of manufacturing same |
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