JP2014143300A - 半導体発光装置 - Google Patents
半導体発光装置 Download PDFInfo
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Abstract
【解決手段】基板10と、基板10に搭載されたLED素子20と、LED素子20の、基板10に固定された面を除く面を覆う波長変換層30、31と、波長変換層30の上面に設けられ、LED素子20および波長変換層30、31から出射された光に対し透過性を持つ材料からなる透明部材40と、波長変換層30および透明部材40の側面を覆う反射樹脂層60とを備え、透明部材40は、側面の少なくとも一部が波長変換層30との接触面側から上面に向かって、内側に傾斜している。
【選択図】図1
Description
基板と、前記基板に搭載された半導体発光素子と、前記半導体発光素子の、前記基板に固定された面を除く面を覆う波長変換層と、前記波長変換層の上に設けられ、前記半導体発光素子および前記波長変換層から出射された光に対し透過性を持つ材料からなる透明部材と、前記波長変換層および前記透明部材の側面を覆う反射樹脂層とを備え、前記透明部材は、光取り出し側となる上面の面積が、前記波長変換層と接する面の面積より小さい。
図1は、本発明の半導体発光装置の第一実施形態の全体を示す側断面である。図2は、同発光装置の上面図である。
透明部材40の厚みt40は、特に限定されないが、LED素子20の幅に対して0.05倍〜1倍未満であり、上限は実用上1mm以下である。例えば、厚み100μmのLED素子20の場合、50μm〜300μm程度である。
D40=[LED素子20の厚みt20]+[LED素子20直上部分の波長変換層30の厚みt30]
となる。実際にはフィレット部31の側面はメニスカスによって曲面になっているので、
D40>t20+t30
である。
第二〜第五の実施形態でも、発光装置を構成する要素とその基本的な構造は、図1に示す第一の実施形態と同様である。ただし、これら実施形態では、透明部材40の側面の形状が異なる。図5〜図8に、各実施形態の断面図を示す。図1と同じ要素は説明を省略する。
以上、LED素子数が1個のシングルチップ発光装置に適用した場合を例に、第一から第五の実施形態の発光装置を説明したが、LED素子の数が複数のマルチチップ型発光装置であってもよい。図9(a)、(b)、(c)は、それぞれ、マルチチップ型発光装置を示す上面図である。図9(a)は、一列(一次元方向)にLED素子を複数配置した発光装置(第六の実施形態)600、(b)及び(c)は、二次元方向にLED素子を複数配置した発光装置(第七の実施形態)700、710を示している。図9(b)は正方マトリクス状の二次元配置であり、(c)は列毎にLED素子を互い違いに配置したものである。図10は、マルチチップ型の断面図であり、この断面において素子数が2個の場合を示している。
以上説明した各実施形態では、透明部材のすべての側面に傾斜を設けた場合を説明したが、側面の傾斜は全側面ではなく一部の側面に設けてもよい。本実施形態は、一部の側面を傾斜面とする実施形態である。図11に、本実施形態を適用した半導体発光装置の上面図を示す。ここでも第一実施形態と同じ要素は、同一の符号で示し、説明を省略する。また図12に図11の半導体発光装置の2つの異なる断面(中心から半分のみ)を示す。図12の右側は、配列方向と直交する方向の断面を示し、左側は配列方向と平行な断面を示している。
Claims (7)
- 基板と、前記基板に搭載された半導体発光素子と、前記半導体発光素子の、前記基板に固定された面を除く面を覆う波長変換層と、前記波長変換層の上に設けられ、前記半導体発光素子および前記波長変換層から出射された光に対し透過性を持つ材料からなる透明部材と、前記波長変換層および前記透明部材の側面を覆う反射樹脂層とを備え、前記透明部材は、光取り出し側となる上面の面積が、前記波長変換層と接する面の面積より小さいことを特徴とする半導体発光装置。
- 請求項1に記載の半導体発光装置であって、前記波長変換層は、前記半導体発光素子の周囲を覆うフィレット部を有することを特徴とする半導体発光装置。
- 請求項1又は2に記載の半導体発光装置であって、前記透明部材は、前記波長変換材料との接触面から前記透明部材の上面との間に、傾斜面を有することを特徴とする半導体発光装置。
- 請求項3記載の半導体発光装置であって、前記透明部材の傾斜面は、前記波長変換材料との接触面から上面まで連続していることを特徴とする半導体発光装置。
- 請求項3記載の半導体発光装置であって、前記透明部材の傾斜面は、前記透明部材の側面の一部に形成されていることを特徴とする半導体発光装置。
- 基板と、前記基板に搭載された半導体発光素子と、前記半導体発光素子の、前記基板に固定された面を除く面を覆う波長変換層と、前記波長変換層の上面に設けられ、前記半導体発光素子および前記波長変換層から出射された光に対し透過性を持つ材料からなる透明部材と、前記波長変換層および前記透明部材の側面を覆う反射樹脂層とを備え、前記透明部材は、側面の少なくとも一部が前記波長変換層との接触面側から上面に向かって、内側に傾斜していることを特徴とする半導体発光装置。
- 請求項1又は6に記載の半導体発光装置であって、前記半導体発光素子を複数有し、前記透明部材は、前記半導体発光素子の配列方向に平行な側面及び/又は直交する側面が、前記波長変換層との接触面側から上面に向かって、内側に傾斜していることを特徴とする半導体発光装置。
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JP2013010839A JP6097084B2 (ja) | 2013-01-24 | 2013-01-24 | 半導体発光装置 |
US14/163,992 US9368690B2 (en) | 2013-01-24 | 2014-01-24 | Semiconductor light-emitting device |
US15/146,241 US9793455B2 (en) | 2013-01-24 | 2016-05-04 | Semiconductor light-emitting device |
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Cited By (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20170003248A (ko) * | 2015-06-30 | 2017-01-09 | 서울반도체 주식회사 | 발광 장치 |
WO2017013870A1 (ja) * | 2015-07-22 | 2017-01-26 | パナソニックIpマネジメント株式会社 | 発光装置 |
JP2017108091A (ja) * | 2015-11-30 | 2017-06-15 | 日亜化学工業株式会社 | 発光装置 |
JP2018506187A (ja) * | 2015-02-18 | 2018-03-01 | コーニンクレッカ フィリップス エヌ ヴェKoninklijke Philips N.V. | 複数の積み重ねられた発光デバイスを有するデバイス |
US10418528B2 (en) | 2017-05-30 | 2019-09-17 | Nichia Corporation | Light-emitting device and method of manufacturing the same |
US10424705B2 (en) | 2016-11-01 | 2019-09-24 | Nichia Corporation | Light emitting device with large phosphor area and method for manufacturing same |
US10468567B2 (en) | 2016-09-28 | 2019-11-05 | Nichia Corporation | Light-emitting device and method of manufacturing the same |
US10546982B2 (en) | 2017-08-22 | 2020-01-28 | Nichia Corporation | Light emitting device |
US10700245B2 (en) | 2017-07-04 | 2020-06-30 | Nichia Corporation | Light-emitting device |
US10825964B2 (en) | 2017-11-17 | 2020-11-03 | Stanley Electric Co., Ltd. | Semiconductor light emitting device and light transmitting member |
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JP2021057397A (ja) * | 2019-09-27 | 2021-04-08 | 日亜化学工業株式会社 | 発光装置及びその製造方法 |
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