JP6330436B2 - パワー半導体モジュール - Google Patents
パワー半導体モジュール Download PDFInfo
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- JP6330436B2 JP6330436B2 JP2014075640A JP2014075640A JP6330436B2 JP 6330436 B2 JP6330436 B2 JP 6330436B2 JP 2014075640 A JP2014075640 A JP 2014075640A JP 2014075640 A JP2014075640 A JP 2014075640A JP 6330436 B2 JP6330436 B2 JP 6330436B2
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- 239000004065 semiconductor Substances 0.000 title claims description 181
- 229910052751 metal Inorganic materials 0.000 claims description 101
- 239000002184 metal Substances 0.000 claims description 101
- 239000000758 substrate Substances 0.000 claims description 70
- 229920005989 resin Polymers 0.000 claims description 4
- 239000011347 resin Substances 0.000 claims description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 2
- 229920001187 thermosetting polymer Polymers 0.000 claims description 2
- 229910010271 silicon carbide Inorganic materials 0.000 claims 1
- 239000000463 material Substances 0.000 description 20
- 239000011810 insulating material Substances 0.000 description 10
- 229910000679 solder Inorganic materials 0.000 description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- 238000005304 joining Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012774 insulation material Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
- H01L23/049—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body the other leads being perpendicular to the base
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/492—Bases or plates or solder therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
- H01L23/18—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
- H01L23/24—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device solid or gel at the normal operating temperature of the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Inverter Devices (AREA)
- Ceramic Engineering (AREA)
Description
図4及び図5に示すパワー半導体モジュール101は、導電板としての金属ベース2を備えている。
この金属ベース2上には、半導体素子としての半導体チップ3が電気的に接続して固定されている。図示した例では、半導体チップ3が金属ベース2上に複数個が設けられている。半導体チップ3の下面に形成されたドレイン電極と金属ベース2とが、図示しない接合材、例えばはんだにより接合されている。
また本発明のその他のパワー半導体モジュールは、金属ベースと、両主面に第1電極および第2電極が設けられ、該第1電極が該金属ベースに電気的に接続して固定された半導体素子と、回路板、絶縁板、金属板が積層して構成され、該金属板が該金属ベースに該半導体素子と同じ側で固定された絶縁基板と、該半導体素子及び該絶縁基板に対向して設けられ、該半導体素子の第2電極と該絶縁基板の回路板とを電気的に接続する金属膜を有する回路基板と、一端が該絶縁基板の回路板に電気的に接続して固定され、他端が該回路基板の金属膜と電気的に接続して固定される導電ポストを備えている。
図1は、本発明の一実施形態のパワー半導体モジュールの断面図(同図(a))及び拡大断面図(同図(b))である。図1(a)は、図5に示す従来のパワー半導体モジュールの断面図に対応する図面である。
また、回路基板8の金属層82と絶縁基板4の回路板43a、43bとは、接合パッド83を介してはんだ等の接合材10により接合されている。
また、半導体チップ3のゲートに接続する配線において、従来例のボンディングワイヤ108では困難である等長配線が、回路基板8では可能である。なぜならボンディングワイヤ108は図4に示す通り直線状でのみ配線が可能であるのに対し、回路基板8を用いればいかなる形状の配線も可能だからである。このゲートの等長配線により、複数の半導体チップ3を同期させてスイッチングすることが可能となるため、パワー半導体モジュール1のスイッチング特性を向上させることができる。
更に、一つの半導体チップ3に対する導電ポスト9の設置数は任意であり、一つの電極に複数個の導電ポスト9を接合することも可能である。
図2に、本発明の実施形態2のパワー半導体モジュールの断面図を示す。図2に示した本実施形態のパワー半導体モジュール21は、図1に示した実施形態1のパワー半導体モジュール1と同一の部材について同一の符号を付した。したがって、以下に述べる実施形態2のパワー半導体モジュールの説明では、図1に示した実施形態1のパワー半導体モジュール1と同一の部材についての重複する説明は省略する。
図3に、本発明の実施形態3のパワー半導体モジュールの断面図を示す。図3に示した本実施形態のパワー半導体モジュール31は、図1に示した実施形態1のパワー半導体モジュール1と同一の部材について同一の符号を付した。したがって、以下に述べる実施形態3のパワー半導体モジュールの説明では、図1に示した実施形態1のパワー半導体モジュール1と同一の部材についての重複する説明は省略する。
2 金属ベース
3 半導体チップ
4 絶縁基板
5 金属端子
6 ケース
7 絶縁材
8 回路基板
9 導電ポスト
10 接合材
11、12 金属ブロック
Claims (7)
- 金属ベースと、
両主面に第1電極および第2電極が設けられ、該第1電極が該金属ベースに電気的に接続して固定された半導体素子と、
回路板、絶縁板、金属板が積層して構成され、該金属板が該金属ベースに該半導体素子と同じ側で固定された絶縁基板と、
該半導体素子及び該絶縁基板に対向して設けられ、該半導体素子の第2電極と該絶縁基板の回路板とを電気的に接続する金属膜を有する回路基板と、
一端が該半導体素子の第2電極に電気的に接続して固定され、他端が該回路基板の金属膜と電気的に接続して固定される導電ポストと、
を備えるパワー半導体モジュール。 - 金属ベースと、
両主面に第1電極および第2電極が設けられ、該第1電極が該金属ベースに電気的に接続して固定された半導体素子と、
回路板、絶縁板、金属板が積層して構成され、該金属板が該金属ベースに該半導体素子と同じ側で固定された絶縁基板と、
該半導体素子及び該絶縁基板に対向して設けられ、該半導体素子の第2電極と該絶縁基板の回路板とを電気的に接続する金属膜を有する回路基板と、
一端が該絶縁基板の回路板に電気的に接続して固定され、他端が該回路基板の金属膜と電気的に接続して固定される導電ポストと、
を備えるパワー半導体モジュール。 - 前記絶縁基板の回路板と前記回路基板の金属膜とが、金属ブロックを介して接続される請求項1記載のパワー半導体モジュール。
- 前記金属ベースと前記半導体素子の第1電極とが、金属ブロックを介して接続される請求項2記載のパワー半導体モジュール。
- 前記半導体素子が炭化ケイ素からなる半導体素子である請求項1または2記載のパワー半導体モジュール。
- 前記半導体素子及び前記絶縁基板を収容するケースを備え、該ケース内の半導体素子及び前記絶縁基板が熱硬化性樹脂により封止された請求項1または2記載のパワー半導体モジュール。
- 前記半導体素子及び前記絶縁基板を収容するケースを備え、前記絶縁基板の回路板と電気的に接続して接合され、かつ該ケースから外方に突出する金属端子を備える請求項1または2記載のパワー半導体モジュール。
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JP2014075640A JP6330436B2 (ja) | 2014-04-01 | 2014-04-01 | パワー半導体モジュール |
US14/672,467 US9812431B2 (en) | 2014-04-01 | 2015-03-30 | Power semiconductor module |
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JP2014075640A JP6330436B2 (ja) | 2014-04-01 | 2014-04-01 | パワー半導体モジュール |
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JP6330436B2 true JP6330436B2 (ja) | 2018-05-30 |
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JP6248803B2 (ja) * | 2014-05-20 | 2017-12-20 | 富士電機株式会社 | パワー半導体モジュール |
JP6344197B2 (ja) * | 2014-10-30 | 2018-06-20 | 富士電機株式会社 | 半導体装置 |
JP6439552B2 (ja) * | 2015-04-01 | 2018-12-19 | 富士電機株式会社 | 半導体モジュール及び半導体装置 |
JP6701641B2 (ja) * | 2015-08-13 | 2020-05-27 | 富士電機株式会社 | 半導体モジュール |
JP6604183B2 (ja) * | 2015-12-16 | 2019-11-13 | 富士電機株式会社 | 半導体モジュール |
US10283447B1 (en) * | 2017-10-26 | 2019-05-07 | Infineon Technologies Ag | Power semiconductor module with partially coated power terminals and method of manufacturing thereof |
US20210401300A1 (en) * | 2018-11-12 | 2021-12-30 | Sony Group Corporation | Biological information measuring device |
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JP4947169B2 (ja) | 2010-03-10 | 2012-06-06 | オムロン株式会社 | 半導体装置及びマイクロフォン |
KR20130055867A (ko) | 2011-11-21 | 2013-05-29 | 한국전자통신연구원 | 압전 마이크로 발전기 및 그 제조 방법 |
JP2012074730A (ja) | 2011-12-07 | 2012-04-12 | Mitsubishi Electric Corp | 電力用半導体モジュール |
JP5899952B2 (ja) | 2012-01-19 | 2016-04-06 | 株式会社明電舎 | 半導体モジュール |
EP2827364B1 (en) * | 2012-03-15 | 2019-11-27 | Fuji Electric Co., Ltd. | Semiconductor device |
JP6097084B2 (ja) | 2013-01-24 | 2017-03-15 | スタンレー電気株式会社 | 半導体発光装置 |
JP6248803B2 (ja) * | 2014-05-20 | 2017-12-20 | 富士電機株式会社 | パワー半導体モジュール |
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2014
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