JP5840102B2 - 電力用半導体装置 - Google Patents
電力用半導体装置 Download PDFInfo
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Description
図1,図2は、それぞれ本発明の実施の形態1に係る電力用半導体装置の断面図、上面図である。なお、図1は図2のI−I’断面を表す。
図1に示すように、本実施形態に係る電力用半導体装置10は、略矩形板状を有するIGBT1,FWDi2と、放熱グリースを介して装置外部の放熱部材(図示せず)に接続されたベース基板9と、ベース基板上に部分的に接合された金属箔4と、などを備える。また、金属箔4の上面とIGBT1,FWDi2の下面とは、介在する導電性接着剤3によって接合されている。
本実施形態にて例示したようなチップサイズの半導体チップ及びベース基板を用いた構造では、導電性接着剤を用いて接合を行った場合に、熱硬化後の冷却工程の際、温度サイクルが負荷された際などに、導電性接着剤に剥離、亀裂が生じることがあった。
この変形例では、互いに分離した複数の接合領域4Aが存在する。例えば図4に示す例では、12mm×12mmのチップサイズに対して3mm×3mmの大きさで構成される10ヶ所の接合領域4Aが存在する。このとき、図4に示すように、図3の構成よりもさらにチップ1,2の隅部を避けて接合領域4Aが設けられる。
図5は、本発明の実施の形態2に係る電力用半導体装置の、図3の上側の図に対応する説明図である。
基本的な構成については実施形態1と同様のため、同様の構成には同一の符号を付し、詳細な説明は省略する。本実施形態に係る電力用半導体装置20では、金属箔4の外周面が、半導体チップ1,2の外周面より外側に位置する。
図6は、本発明の実施の形態3に係る電力用半導体装置の上面図である。
基本的な構成については実施形態1又は2と同様のため、同様の構成には同一の符号を付し、詳細な説明は省略する。本実施形態に係る電力用半導体装置30では、金属箔が、並列配置された複数の金属リボン34で構成される。例示した12mm×12mmのチップサイズの場合、各金属リボン34の幅は例えば2.5mmであり、厚さは例えば0.2mmである。図6では、5列の金属リボンが並列配置された構成について示している。
この変形例では、略長方形板状の半導体チップ1,2を想定しており、例示的なチップサイズは12mm×7mmである。この場合、導電性接着剤3に加わる熱応力は、半導体チップ1,2の長辺方向(図7のx方向)で大きくなるため、その長辺方向に剥離、亀裂が進展しやすい。それゆえ、図7に示すように、金属リボン34の長さ方向と半導体チップ1,2の長辺方向とを一致させ、半導体チップ1,2の長辺側の両端において非接合領域34Bを広く設けることが好ましい。
1a(2a) 主電極、 3 導電性接着剤(導電性接合材)、 4 金属箔、
4A,34A 接合領域、 4B,34B 非接合領域、 5 回路パターン、
6 樹脂絶縁層、 7 放熱ベース、 8 ワイヤ、 9 ベース基板、
10,20,30 電力用半導体装置、 34 金属リボン。
Claims (8)
- 回路パターンを有するベース基板と、
前記回路パターン上に部分的に接合された金属箔と、
前記金属箔上に導電性接合材を用いて接合された半導体チップとを備え、
前記半導体チップの下面全体が前記導電性接合材で接合され、
前記半導体チップの下面に形成された電極は、前記導電性接合材及び前記金属箔を介して前記回路パターンに電気的に接続され、
前記金属箔の外周面は前記半導体チップの外周面より外側に位置し、前記半導体チップの外周面の少なくとも隅部の下側で、前記金属箔と前記回路パターンとが接合されないことを特徴とする電力用半導体装置。 - 前記金属箔の上面のうち、前記金属箔と前記ベース基板とが接合された接合領域の上側には、凹凸が形成されていることを特徴とする、請求項1に記載の電力用半導体装置。
- 前記金属箔と前記ベース基板とが接合された接合領域は、互いに分離した複数の領域を含むことを特徴とする、請求項1又は2に記載の電力用半導体装置。
- 前記金属箔は、上面側で、その外周面から少なくとも前記半導体チップの外周面に至るまで薄厚化されていることを特徴とする、請求項1〜3のいずれか1項に記載の電力用半導体装置。
- 前記金属箔は、平行に配置された複数の金属リボンで構成されたことを特徴とする、請求項1〜4のいずれか1項に記載の電力用半導体装置。
- 前記半導体チップは略長方形状を有し、
前記複数の金属リボンは、その長手方向が前記半導体チップの長辺方向と一致するように配置されたことを特徴とする、請求項5に記載の電力用半導体装置。 - 前記半導体チップは、SiC基板を含むことを特徴とする、請求項1〜6のいずれか1項に記載の電力用半導体装置。
- 前記導電性接合材は、接着性樹脂及び金属フィラーを含む導電性接着剤である、請求項1〜7のいずれか1項に記載の電力用半導体装置。
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US10249552B2 (en) * | 2017-02-22 | 2019-04-02 | Jmj Korea Co., Ltd. | Semiconductor package having double-sided heat dissipation structure |
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