JP5043554B2 - 半導体発光装置 - Google Patents
半導体発光装置 Download PDFInfo
- Publication number
- JP5043554B2 JP5043554B2 JP2007205597A JP2007205597A JP5043554B2 JP 5043554 B2 JP5043554 B2 JP 5043554B2 JP 2007205597 A JP2007205597 A JP 2007205597A JP 2007205597 A JP2007205597 A JP 2007205597A JP 5043554 B2 JP5043554 B2 JP 5043554B2
- Authority
- JP
- Japan
- Prior art keywords
- resin
- semiconductor light
- light emitting
- recess
- emitting element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title claims description 89
- 229920005989 resin Polymers 0.000 claims description 173
- 239000011347 resin Substances 0.000 claims description 173
- 230000002093 peripheral effect Effects 0.000 claims description 25
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 23
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- 238000007789 sealing Methods 0.000 description 9
- 230000003287 optical effect Effects 0.000 description 7
- 230000007797 corrosion Effects 0.000 description 5
- 238000005260 corrosion Methods 0.000 description 5
- 238000002310 reflectometry Methods 0.000 description 5
- 239000000919 ceramic Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910001316 Ag alloy Inorganic materials 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 230000020169 heat generation Effects 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- -1 aluminum metals Chemical class 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000002845 discoloration Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/508—Wavelength conversion elements having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer, wavelength conversion layer with a concentration gradient of the wavelength conversion material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
- Y10S257/918—Light emitting regenerative switching device, e.g. light emitting scr arrays, circuitry
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Led Devices (AREA)
Description
(1)前者(第一樹脂8を構成する透光性樹脂)と後者(第二樹脂11となる透光性樹脂)が共にシリコーン樹脂のような弾性を有する樹脂の場合、
(2)前者が弾性を有し、後者が硬性を有する樹脂の場合、
の組み合わせが考えられる。
2 ハウジング
3 第一凹部
4 開口
5 第二凹部
6 段差部
7 半導体発光素子
8 第一樹脂
9 内周面
10 最下面
11 第二樹脂
12 上面
13 開口端部
14 内周面
15 上面
Claims (6)
- ハウジングに、底面に半導体発光素子が実装された第一凹部と前記第一凹部の上方に前記第一凹部と連通する、開口を有する第二凹部が形成され、
前記第一凹部の上部と前記第二凹部の下部の境界部は前記第一凹部よりも前記第二凹部が大きく且つ前記境界部には段差部が形成されており、
前記第一凹部には透光性樹脂に蛍光体を混入した第一樹脂が充填されて前記半導体発光素子が樹脂封止されると共に、前記第一樹脂は前記第二凹部の内周面を覆うように第一凹部から第二凹部の内周面に沿って前記半導体発光素子側に凹んだ湾曲面状に盛り上がっており、
前記第一樹脂上には透光性樹脂からなる第二樹脂が配設され、
前記第二樹脂中には、前記第一樹脂よりも薄い濃度で蛍光体が混入されていることを特徴とする半導体光源装置。 - 前記第一樹脂の前記湾曲面の最下面は前記段差部よりも前記半導体発光素子側に位置していることを特徴とする請求項1に記載の半導体発光装置。
- 前記第二樹脂の表面は前記半導体発光素子側に凹んだ湾曲面を呈することを特徴とする請求項1または2のいずれか1項に記載の半導体発光装置。
- 前記第二樹脂の表面は前記半導体発光素子と反対側に膨らんだ湾曲面を呈することを特徴とする請求項1または2のいずれか1項に記載の半導体発光装置。
- 前記第一樹脂を構成する透光性樹脂は弾性を有する樹脂であり、前記第二樹脂は前記第一樹脂を構成する透光性樹脂よりも硬性であることを特徴とする請求項1〜4のいずれか1項に記載の半導体発光装置。
- 前記第二樹脂は前記第一樹脂を構成する透光性樹脂よりも低屈折率を有することを特徴とする請求項1〜5のいずれか1項に記載の半導体発光装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007205597A JP5043554B2 (ja) | 2007-08-07 | 2007-08-07 | 半導体発光装置 |
CN200810131329.6A CN101364629B (zh) | 2007-08-07 | 2008-08-06 | 半导体发光装置 |
US12/187,570 US7859001B2 (en) | 2007-08-07 | 2008-08-07 | Semiconductor light emitting apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007205597A JP5043554B2 (ja) | 2007-08-07 | 2007-08-07 | 半導体発光装置 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2009043836A JP2009043836A (ja) | 2009-02-26 |
JP2009043836A5 JP2009043836A5 (ja) | 2010-09-09 |
JP5043554B2 true JP5043554B2 (ja) | 2012-10-10 |
Family
ID=40345625
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007205597A Expired - Fee Related JP5043554B2 (ja) | 2007-08-07 | 2007-08-07 | 半導体発光装置 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7859001B2 (ja) |
JP (1) | JP5043554B2 (ja) |
CN (1) | CN101364629B (ja) |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20120138998A1 (en) * | 2009-08-27 | 2012-06-07 | Kyocera Corporation | Light-Emitting Device |
TWI384177B (zh) * | 2009-09-04 | 2013-02-01 | Au Optronics Corp | 具高發光效率之光源裝置及其製造方法 |
TW201145597A (en) * | 2010-01-28 | 2011-12-16 | Lg Innotek Co Ltd | Light emitting device package |
JP5497520B2 (ja) * | 2010-04-14 | 2014-05-21 | 株式会社小糸製作所 | 発光モジュールおよび光波長変換部材 |
JP5426484B2 (ja) | 2010-06-07 | 2014-02-26 | 株式会社東芝 | 半導体発光装置の製造方法 |
KR101708025B1 (ko) * | 2010-08-19 | 2017-02-20 | 서울반도체 주식회사 | 렌즈 및 그것을 포함하는 발광장치 |
JP5767062B2 (ja) * | 2010-09-30 | 2015-08-19 | 日東電工株式会社 | 発光ダイオード封止材、および、発光ダイオード装置の製造方法 |
TW201240161A (en) * | 2011-03-17 | 2012-10-01 | Lextar Electronics Corp | Light emiting diode package structure and manufacturing method thereof |
JP2013084889A (ja) * | 2011-09-30 | 2013-05-09 | Toshiba Corp | 半導体発光装置及びその製造方法 |
WO2013122831A1 (en) * | 2012-02-13 | 2013-08-22 | Cree, Inc. | Improved light emitting devices and methods |
CN102623623A (zh) * | 2012-03-26 | 2012-08-01 | 李海涛 | 一种软胶保护内芯的表面贴装式led装置 |
TWM453101U (zh) * | 2012-05-24 | 2013-05-11 | Gem Weltronics Twn Corp | 具有多層式結構之一體化高效率照明裝置 |
KR101367918B1 (ko) * | 2012-09-24 | 2014-02-28 | (주)라이타이저코리아 | 발광 소자 패키지 |
JP6097084B2 (ja) * | 2013-01-24 | 2017-03-15 | スタンレー電気株式会社 | 半導体発光装置 |
CN105355761B (zh) * | 2014-09-18 | 2018-08-28 | 中山大学 | 一种光色均匀的led荧光粉封装结构及其透明模具 |
JP6493348B2 (ja) * | 2016-09-30 | 2019-04-03 | 日亜化学工業株式会社 | 発光装置 |
JP6802693B2 (ja) * | 2016-11-24 | 2020-12-16 | スタンレー電気株式会社 | 半導体発光装置 |
JP2018148110A (ja) * | 2017-03-08 | 2018-09-20 | スタンレー電気株式会社 | 発光装置及びその製造方法 |
DE102017105035A1 (de) * | 2017-03-09 | 2018-09-13 | Osram Opto Semiconductors Gmbh | Lichtemittierendes bauteil und verfahren zum herstellen eines lichtemittierenden bauteils |
JP7096473B2 (ja) * | 2017-09-20 | 2022-07-06 | 日亜化学工業株式会社 | 発光装置 |
JP6555335B2 (ja) * | 2017-12-28 | 2019-08-07 | 日亜化学工業株式会社 | 発光装置及び発光装置の製造方法 |
TWI648878B (zh) * | 2018-05-15 | 2019-01-21 | 東貝光電科技股份有限公司 | Led發光源、led發光源之製造方法及其直下式顯示器 |
JP7277760B2 (ja) * | 2019-08-19 | 2023-05-19 | 日亜化学工業株式会社 | 発光装置及びその製造方法 |
JP2023133730A (ja) * | 2022-03-14 | 2023-09-27 | スタンレー電気株式会社 | 半導体発光装置 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07111343A (ja) * | 1993-10-13 | 1995-04-25 | Matsushita Electron Corp | 光電装置 |
JP2001111109A (ja) * | 1999-10-07 | 2001-04-20 | Sharp Corp | 窒化ガリウム系化合物半導体発光素子 |
JP2002033520A (ja) | 2000-07-14 | 2002-01-31 | Toshiba Electronic Engineering Corp | 半導体発光装置 |
US6576488B2 (en) * | 2001-06-11 | 2003-06-10 | Lumileds Lighting U.S., Llc | Using electrophoresis to produce a conformally coated phosphor-converted light emitting semiconductor |
US6791116B2 (en) * | 2002-04-30 | 2004-09-14 | Toyoda Gosei Co., Ltd. | Light emitting diode |
JP4366161B2 (ja) * | 2003-09-19 | 2009-11-18 | スタンレー電気株式会社 | 半導体発光装置 |
JP4622253B2 (ja) * | 2004-01-22 | 2011-02-02 | 日亜化学工業株式会社 | 発光デバイス及びその製造方法 |
JP4504056B2 (ja) * | 2004-03-22 | 2010-07-14 | スタンレー電気株式会社 | 半導体発光装置の製造方法 |
US7517728B2 (en) * | 2004-03-31 | 2009-04-14 | Cree, Inc. | Semiconductor light emitting devices including a luminescent conversion element |
JP2006093672A (ja) * | 2004-08-26 | 2006-04-06 | Toshiba Corp | 半導体発光装置 |
US7842526B2 (en) * | 2004-09-09 | 2010-11-30 | Toyoda Gosei Co., Ltd. | Light emitting device and method of producing same |
JP4389126B2 (ja) * | 2004-10-04 | 2009-12-24 | スタンレー電気株式会社 | 半導体発光装置及びその製造方法 |
JP2007043074A (ja) * | 2005-06-27 | 2007-02-15 | Toshiba Lighting & Technology Corp | 照明装置 |
JP2007109915A (ja) * | 2005-10-14 | 2007-04-26 | Stanley Electric Co Ltd | 発光ダイオード |
US8044418B2 (en) * | 2006-07-13 | 2011-10-25 | Cree, Inc. | Leadframe-based packages for solid state light emitting devices |
US8092735B2 (en) * | 2006-08-17 | 2012-01-10 | 3M Innovative Properties Company | Method of making a light emitting device having a molded encapsulant |
-
2007
- 2007-08-07 JP JP2007205597A patent/JP5043554B2/ja not_active Expired - Fee Related
-
2008
- 2008-08-06 CN CN200810131329.6A patent/CN101364629B/zh not_active Expired - Fee Related
- 2008-08-07 US US12/187,570 patent/US7859001B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US7859001B2 (en) | 2010-12-28 |
US20090039369A1 (en) | 2009-02-12 |
JP2009043836A (ja) | 2009-02-26 |
CN101364629B (zh) | 2012-08-22 |
CN101364629A (zh) | 2009-02-11 |
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