JP5043554B2 - 半導体発光装置 - Google Patents
半導体発光装置 Download PDFInfo
- Publication number
- JP5043554B2 JP5043554B2 JP2007205597A JP2007205597A JP5043554B2 JP 5043554 B2 JP5043554 B2 JP 5043554B2 JP 2007205597 A JP2007205597 A JP 2007205597A JP 2007205597 A JP2007205597 A JP 2007205597A JP 5043554 B2 JP5043554 B2 JP 5043554B2
- Authority
- JP
- Japan
- Prior art keywords
- resin
- semiconductor light
- light emitting
- recess
- emitting element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/852—Encapsulations
- H10H20/853—Encapsulations characterised by their shape
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/851—Wavelength conversion means
- H10H20/8516—Wavelength conversion means having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer or wavelength conversion layer with a concentration gradient
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/855—Optical field-shaping means, e.g. lenses
- H10H20/856—Reflecting means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
- H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
- Y10S257/918—Light emitting regenerative switching device, e.g. light emitting scr arrays, circuitry
Landscapes
- Led Device Packages (AREA)
- Led Devices (AREA)
Description
(1)前者(第一樹脂8を構成する透光性樹脂)と後者(第二樹脂11となる透光性樹脂)が共にシリコーン樹脂のような弾性を有する樹脂の場合、
(2)前者が弾性を有し、後者が硬性を有する樹脂の場合、
の組み合わせが考えられる。
2 ハウジング
3 第一凹部
4 開口
5 第二凹部
6 段差部
7 半導体発光素子
8 第一樹脂
9 内周面
10 最下面
11 第二樹脂
12 上面
13 開口端部
14 内周面
15 上面
Claims (6)
- ハウジングに、底面に半導体発光素子が実装された第一凹部と前記第一凹部の上方に前記第一凹部と連通する、開口を有する第二凹部が形成され、
前記第一凹部の上部と前記第二凹部の下部の境界部は前記第一凹部よりも前記第二凹部が大きく且つ前記境界部には段差部が形成されており、
前記第一凹部には透光性樹脂に蛍光体を混入した第一樹脂が充填されて前記半導体発光素子が樹脂封止されると共に、前記第一樹脂は前記第二凹部の内周面を覆うように第一凹部から第二凹部の内周面に沿って前記半導体発光素子側に凹んだ湾曲面状に盛り上がっており、
前記第一樹脂上には透光性樹脂からなる第二樹脂が配設され、
前記第二樹脂中には、前記第一樹脂よりも薄い濃度で蛍光体が混入されていることを特徴とする半導体光源装置。 - 前記第一樹脂の前記湾曲面の最下面は前記段差部よりも前記半導体発光素子側に位置していることを特徴とする請求項1に記載の半導体発光装置。
- 前記第二樹脂の表面は前記半導体発光素子側に凹んだ湾曲面を呈することを特徴とする請求項1または2のいずれか1項に記載の半導体発光装置。
- 前記第二樹脂の表面は前記半導体発光素子と反対側に膨らんだ湾曲面を呈することを特徴とする請求項1または2のいずれか1項に記載の半導体発光装置。
- 前記第一樹脂を構成する透光性樹脂は弾性を有する樹脂であり、前記第二樹脂は前記第一樹脂を構成する透光性樹脂よりも硬性であることを特徴とする請求項1〜4のいずれか1項に記載の半導体発光装置。
- 前記第二樹脂は前記第一樹脂を構成する透光性樹脂よりも低屈折率を有することを特徴とする請求項1〜5のいずれか1項に記載の半導体発光装置。
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007205597A JP5043554B2 (ja) | 2007-08-07 | 2007-08-07 | 半導体発光装置 |
| CN200810131329.6A CN101364629B (zh) | 2007-08-07 | 2008-08-06 | 半导体发光装置 |
| US12/187,570 US7859001B2 (en) | 2007-08-07 | 2008-08-07 | Semiconductor light emitting apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007205597A JP5043554B2 (ja) | 2007-08-07 | 2007-08-07 | 半導体発光装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2009043836A JP2009043836A (ja) | 2009-02-26 |
| JP2009043836A5 JP2009043836A5 (ja) | 2010-09-09 |
| JP5043554B2 true JP5043554B2 (ja) | 2012-10-10 |
Family
ID=40345625
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007205597A Expired - Fee Related JP5043554B2 (ja) | 2007-08-07 | 2007-08-07 | 半導体発光装置 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US7859001B2 (ja) |
| JP (1) | JP5043554B2 (ja) |
| CN (1) | CN101364629B (ja) |
Families Citing this family (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120138998A1 (en) * | 2009-08-27 | 2012-06-07 | Kyocera Corporation | Light-Emitting Device |
| TWI384177B (zh) * | 2009-09-04 | 2013-02-01 | Au Optronics Corp | 具高發光效率之光源裝置及其製造方法 |
| TW201145597A (en) * | 2010-01-28 | 2011-12-16 | Lg Innotek Co Ltd | Light emitting device package |
| JP5497520B2 (ja) * | 2010-04-14 | 2014-05-21 | 株式会社小糸製作所 | 発光モジュールおよび光波長変換部材 |
| JP5426484B2 (ja) * | 2010-06-07 | 2014-02-26 | 株式会社東芝 | 半導体発光装置の製造方法 |
| KR101708025B1 (ko) * | 2010-08-19 | 2017-02-20 | 서울반도체 주식회사 | 렌즈 및 그것을 포함하는 발광장치 |
| JP5767062B2 (ja) * | 2010-09-30 | 2015-08-19 | 日東電工株式会社 | 発光ダイオード封止材、および、発光ダイオード装置の製造方法 |
| TW201240161A (en) * | 2011-03-17 | 2012-10-01 | Lextar Electronics Corp | Light emiting diode package structure and manufacturing method thereof |
| JP2013084889A (ja) * | 2011-09-30 | 2013-05-09 | Toshiba Corp | 半導体発光装置及びその製造方法 |
| CN104115291A (zh) * | 2012-02-13 | 2014-10-22 | 克利公司 | 改进的发光设备和方法 |
| CN102623623A (zh) * | 2012-03-26 | 2012-08-01 | 李海涛 | 一种软胶保护内芯的表面贴装式led装置 |
| TWM453101U (zh) * | 2012-05-24 | 2013-05-11 | Gem Weltronics Twn Corp | 具有多層式結構之一體化高效率照明裝置 |
| KR101367918B1 (ko) * | 2012-09-24 | 2014-02-28 | (주)라이타이저코리아 | 발광 소자 패키지 |
| JP6097084B2 (ja) * | 2013-01-24 | 2017-03-15 | スタンレー電気株式会社 | 半導体発光装置 |
| CN105355761B (zh) * | 2014-09-18 | 2018-08-28 | 中山大学 | 一种光色均匀的led荧光粉封装结构及其透明模具 |
| JP6493348B2 (ja) * | 2016-09-30 | 2019-04-03 | 日亜化学工業株式会社 | 発光装置 |
| JP6802693B2 (ja) * | 2016-11-24 | 2020-12-16 | スタンレー電気株式会社 | 半導体発光装置 |
| JP2018148110A (ja) * | 2017-03-08 | 2018-09-20 | スタンレー電気株式会社 | 発光装置及びその製造方法 |
| DE102017105035B4 (de) * | 2017-03-09 | 2024-09-26 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Lichtemittierendes bauteil und verfahren zum herstellen eines lichtemittierenden bauteils |
| JP7096473B2 (ja) * | 2017-09-20 | 2022-07-06 | 日亜化学工業株式会社 | 発光装置 |
| JP6555335B2 (ja) * | 2017-12-28 | 2019-08-07 | 日亜化学工業株式会社 | 発光装置及び発光装置の製造方法 |
| TWI648878B (zh) * | 2018-05-15 | 2019-01-21 | 東貝光電科技股份有限公司 | Led發光源、led發光源之製造方法及其直下式顯示器 |
| JP7277760B2 (ja) * | 2019-08-19 | 2023-05-19 | 日亜化学工業株式会社 | 発光装置及びその製造方法 |
| JP2023133730A (ja) * | 2022-03-14 | 2023-09-27 | スタンレー電気株式会社 | 半導体発光装置 |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07111343A (ja) * | 1993-10-13 | 1995-04-25 | Matsushita Electron Corp | 光電装置 |
| JP2001111109A (ja) * | 1999-10-07 | 2001-04-20 | Sharp Corp | 窒化ガリウム系化合物半導体発光素子 |
| JP2002033520A (ja) | 2000-07-14 | 2002-01-31 | Toshiba Electronic Engineering Corp | 半導体発光装置 |
| US6576488B2 (en) * | 2001-06-11 | 2003-06-10 | Lumileds Lighting U.S., Llc | Using electrophoresis to produce a conformally coated phosphor-converted light emitting semiconductor |
| US6791116B2 (en) * | 2002-04-30 | 2004-09-14 | Toyoda Gosei Co., Ltd. | Light emitting diode |
| JP4366161B2 (ja) * | 2003-09-19 | 2009-11-18 | スタンレー電気株式会社 | 半導体発光装置 |
| JP4622253B2 (ja) * | 2004-01-22 | 2011-02-02 | 日亜化学工業株式会社 | 発光デバイス及びその製造方法 |
| JP4504056B2 (ja) * | 2004-03-22 | 2010-07-14 | スタンレー電気株式会社 | 半導体発光装置の製造方法 |
| US7517728B2 (en) * | 2004-03-31 | 2009-04-14 | Cree, Inc. | Semiconductor light emitting devices including a luminescent conversion element |
| JP2006093672A (ja) * | 2004-08-26 | 2006-04-06 | Toshiba Corp | 半導体発光装置 |
| US7842526B2 (en) * | 2004-09-09 | 2010-11-30 | Toyoda Gosei Co., Ltd. | Light emitting device and method of producing same |
| JP4389126B2 (ja) * | 2004-10-04 | 2009-12-24 | スタンレー電気株式会社 | 半導体発光装置及びその製造方法 |
| JP2007043074A (ja) * | 2005-06-27 | 2007-02-15 | Toshiba Lighting & Technology Corp | 照明装置 |
| JP2007109915A (ja) * | 2005-10-14 | 2007-04-26 | Stanley Electric Co Ltd | 発光ダイオード |
| US8044418B2 (en) * | 2006-07-13 | 2011-10-25 | Cree, Inc. | Leadframe-based packages for solid state light emitting devices |
| US8092735B2 (en) * | 2006-08-17 | 2012-01-10 | 3M Innovative Properties Company | Method of making a light emitting device having a molded encapsulant |
-
2007
- 2007-08-07 JP JP2007205597A patent/JP5043554B2/ja not_active Expired - Fee Related
-
2008
- 2008-08-06 CN CN200810131329.6A patent/CN101364629B/zh not_active Expired - Fee Related
- 2008-08-07 US US12/187,570 patent/US7859001B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CN101364629A (zh) | 2009-02-11 |
| CN101364629B (zh) | 2012-08-22 |
| JP2009043836A (ja) | 2009-02-26 |
| US20090039369A1 (en) | 2009-02-12 |
| US7859001B2 (en) | 2010-12-28 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5043554B2 (ja) | 半導体発光装置 | |
| CN100521264C (zh) | 表面安装型led | |
| KR100927077B1 (ko) | 광 반도체 장치 및 광 반도체 장치의 제조 방법 | |
| JP4976974B2 (ja) | 発光装置 | |
| WO2011125346A1 (ja) | 発光装置およびその製造方法 | |
| US7560748B2 (en) | Light emitting diode unit | |
| JP2007311445A (ja) | 半導体発光装置及びその製造方法 | |
| US20020145152A1 (en) | Light emitting device | |
| JP2008506246A (ja) | 発光装置 | |
| JP5535750B2 (ja) | 発光素子モジュール | |
| JP6622032B2 (ja) | 発光装置 | |
| JP2012530365A (ja) | オプトエレクトロニクス半導体部品 | |
| JP3138795U (ja) | 半導体発光装置及び半導体発光装置を用いた面状発光源 | |
| JP5196551B2 (ja) | 発光装置 | |
| JP2010021259A (ja) | 光半導体装置 | |
| JP5455720B2 (ja) | 光半導体パッケージおよび光半導体装置 | |
| US10749084B2 (en) | Optoelectronic component and method of producing an optoelectronic component | |
| JP2004327632A (ja) | 発光素子収納用パッケージおよび発光装置 | |
| US20160365494A1 (en) | Light emitting device and method of manufacturing the light emitting device | |
| JP4884074B2 (ja) | 半導体発光装置 | |
| CN111755581B (zh) | 发光二极管载具以及具有发光二极管载具的发光二极管封装 | |
| KR20090001107A (ko) | Led 패키지 | |
| US11335840B2 (en) | Optical semiconductor device package, optical semiconductor device, and manufacturing method for optical semiconductor device package | |
| JP2022046071A (ja) | 発光装置 | |
| JP3894915B2 (ja) | 発光素子収納用パッケージおよび発光装置 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20100721 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20100721 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20120321 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20120321 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120511 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20120619 |
|
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20120712 |
|
| R150 | Certificate of patent or registration of utility model |
Ref document number: 5043554 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20150720 Year of fee payment: 3 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| LAPS | Cancellation because of no payment of annual fees |