JP2009043836A - 半導体発光装置 - Google Patents
半導体発光装置 Download PDFInfo
- Publication number
- JP2009043836A JP2009043836A JP2007205597A JP2007205597A JP2009043836A JP 2009043836 A JP2009043836 A JP 2009043836A JP 2007205597 A JP2007205597 A JP 2007205597A JP 2007205597 A JP2007205597 A JP 2007205597A JP 2009043836 A JP2009043836 A JP 2009043836A
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- resin
- semiconductor light
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- light emitting
- emitting element
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/508—Wavelength conversion elements having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer, wavelength conversion layer with a concentration gradient of the wavelength conversion material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
- Y10S257/918—Light emitting regenerative switching device, e.g. light emitting scr arrays, circuitry
Abstract
【解決手段】ハウジング2内に、底面に半導体発光素子7が実装された第一凹部3と該第一凹部3の上方に開口4を有する第二凹部5が形成され、第一凹部3の上部と第二凹部5の下部の境界部に段差部6が形成されている。そして、透光性樹脂に蛍光体を混入した第一樹脂8が第一凹部3内に充填されて半導体発光素子7が樹脂封止されると共に、第一樹脂8は第二凹部5の内周面9を覆うように第一凹部3から第二凹部5の内周面9に沿って湾曲状に盛り上がっている。
【選択図】図1
Description
(1)前者(第一樹脂8を構成する透光性樹脂)と後者(第二樹脂11となる透光性樹脂)が共にシリコーン樹脂のような弾性を有する樹脂の場合、
(2)前者が弾性を有し、後者が硬性を有する樹脂の場合、
の組み合わせが考えられる。
2 ハウジング
3 第一凹部
4 開口
5 第二凹部
6 段差部
7 半導体発光素子
8 第一樹脂
9 内周面
10 最下面
11 第二樹脂
12 上面
13 開口端部
14 内周面
15 上面
Claims (10)
- ハウジングに、底面に半導体発光素子が実装された第一凹部と前記第一凹部の上方に前記第一凹部と連通する、開口を有する第二凹部が形成され、前記第一凹部の上部と前記第二凹部の下部の境界部は前記第一凹部よりも前記第二凹部が大きく且つ前記境界部には段差部が形成されており、前記第一凹部には透光性樹脂に蛍光体を混入した第一樹脂が充填されて前記半導体発光素子が樹脂封止されると共に、前記第一樹脂は前記第二凹部の内周面を覆うように第一凹部から第二凹部の内周面に沿って前記半導体発光素子側に凹んだ湾曲面状に盛り上がっており、前記第一樹脂上には透光性樹脂からなる第二樹脂が配設されてなることを特徴とする半導体光源装置。
- 前記第一樹脂の前記湾曲面の最下面は前記段差部よりも前記半導体発光素子側に位置していることを特徴とする請求項1に記載の半導体発光装置。
- 前記第二樹脂の表面は前記半導体発光素子側に凹んだ湾曲面を呈することを特徴とする請求項1または2のいずれか1項に記載の半導体発光装置。
- 前記第二樹脂の表面は前記半導体発光素子と反対側に膨らんだ湾曲面を呈することを特徴とする請求項1または2のいずれか1項に記載の半導体発光装置。
- 前記第二樹脂は前記第一樹脂を構成する透光性樹脂よりも硬性であることを特徴とする請求項1〜4のいずれか1項に記載の半導体発光装置。
- 前記第一樹脂を構成する透光性樹脂は弾性を有する樹脂であることを特徴とする請求項5に記載の半導体発光装置。
- 前記第二樹脂は前記第一樹脂を構成する透光性樹脂よりも低屈折率を有することを特徴とする請求項1〜6のいずれか1項に記載の半導体発光装置。
- 前記ハウジングの少なくとも前記第一凹部の内周面には高反射膜、外周面には耐腐食膜が設けられていることを特徴とする請求項1〜7に記載の半導体発光装置。
- 前記高反射膜は銀、銀合金およびアルミニウムの金属のうちから選ばれた1つであり、耐腐食膜は金からなることを特徴とする請求項8に記載の半導体発光装置。
- 前記第二樹脂中には、前記第一樹脂よりも薄い濃度で蛍光体が混入されていることを特徴とする請求項1〜9のいずれか1項に記載の半導体発光装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007205597A JP5043554B2 (ja) | 2007-08-07 | 2007-08-07 | 半導体発光装置 |
CN200810131329.6A CN101364629B (zh) | 2007-08-07 | 2008-08-06 | 半导体发光装置 |
US12/187,570 US7859001B2 (en) | 2007-08-07 | 2008-08-07 | Semiconductor light emitting apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007205597A JP5043554B2 (ja) | 2007-08-07 | 2007-08-07 | 半導体発光装置 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2009043836A true JP2009043836A (ja) | 2009-02-26 |
JP2009043836A5 JP2009043836A5 (ja) | 2010-09-09 |
JP5043554B2 JP5043554B2 (ja) | 2012-10-10 |
Family
ID=40345625
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007205597A Expired - Fee Related JP5043554B2 (ja) | 2007-08-07 | 2007-08-07 | 半導体発光装置 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7859001B2 (ja) |
JP (1) | JP5043554B2 (ja) |
CN (1) | CN101364629B (ja) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2011024934A1 (ja) * | 2009-08-27 | 2011-03-03 | 京セラ株式会社 | 発光装置 |
KR20120017703A (ko) * | 2010-08-19 | 2012-02-29 | 서울반도체 주식회사 | 렌즈 및 그것을 포함하는 발광장치 |
JP3180453U (ja) * | 2012-05-24 | 2012-12-20 | 盈勝科技股▲ふん▼有限公司 | 多層式構造を具える一体化高効率照明装置 |
JP2018050082A (ja) * | 2017-12-28 | 2018-03-29 | 日亜化学工業株式会社 | 発光装置及び発光装置の製造方法 |
JP2018085448A (ja) * | 2016-11-24 | 2018-05-31 | スタンレー電気株式会社 | 半導体発光装置 |
JP2018148110A (ja) * | 2017-03-08 | 2018-09-20 | スタンレー電気株式会社 | 発光装置及びその製造方法 |
JP2019057578A (ja) * | 2017-09-20 | 2019-04-11 | 日亜化学工業株式会社 | 発光装置 |
WO2023176301A1 (ja) * | 2022-03-14 | 2023-09-21 | スタンレー電気株式会社 | 半導体発光装置 |
Families Citing this family (16)
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TWI384177B (zh) * | 2009-09-04 | 2013-02-01 | Au Optronics Corp | 具高發光效率之光源裝置及其製造方法 |
TW201145597A (en) * | 2010-01-28 | 2011-12-16 | Lg Innotek Co Ltd | Light emitting device package |
JP5497520B2 (ja) * | 2010-04-14 | 2014-05-21 | 株式会社小糸製作所 | 発光モジュールおよび光波長変換部材 |
JP5426484B2 (ja) | 2010-06-07 | 2014-02-26 | 株式会社東芝 | 半導体発光装置の製造方法 |
JP5767062B2 (ja) * | 2010-09-30 | 2015-08-19 | 日東電工株式会社 | 発光ダイオード封止材、および、発光ダイオード装置の製造方法 |
TW201240161A (en) * | 2011-03-17 | 2012-10-01 | Lextar Electronics Corp | Light emiting diode package structure and manufacturing method thereof |
JP2013084889A (ja) * | 2011-09-30 | 2013-05-09 | Toshiba Corp | 半導体発光装置及びその製造方法 |
CN104115291A (zh) * | 2012-02-13 | 2014-10-22 | 克利公司 | 改进的发光设备和方法 |
CN102623623A (zh) * | 2012-03-26 | 2012-08-01 | 李海涛 | 一种软胶保护内芯的表面贴装式led装置 |
KR101367918B1 (ko) * | 2012-09-24 | 2014-02-28 | (주)라이타이저코리아 | 발광 소자 패키지 |
JP6097084B2 (ja) * | 2013-01-24 | 2017-03-15 | スタンレー電気株式会社 | 半導体発光装置 |
CN105355761B (zh) * | 2014-09-18 | 2018-08-28 | 中山大学 | 一种光色均匀的led荧光粉封装结构及其透明模具 |
JP6493348B2 (ja) | 2016-09-30 | 2019-04-03 | 日亜化学工業株式会社 | 発光装置 |
DE102017105035A1 (de) * | 2017-03-09 | 2018-09-13 | Osram Opto Semiconductors Gmbh | Lichtemittierendes bauteil und verfahren zum herstellen eines lichtemittierenden bauteils |
TWI648878B (zh) * | 2018-05-15 | 2019-01-21 | 東貝光電科技股份有限公司 | Led發光源、led發光源之製造方法及其直下式顯示器 |
JP7277760B2 (ja) * | 2019-08-19 | 2023-05-19 | 日亜化学工業株式会社 | 発光装置及びその製造方法 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07111343A (ja) * | 1993-10-13 | 1995-04-25 | Matsushita Electron Corp | 光電装置 |
JP2001111109A (ja) * | 1999-10-07 | 2001-04-20 | Sharp Corp | 窒化ガリウム系化合物半導体発光素子 |
JP2003069086A (ja) * | 2001-06-11 | 2003-03-07 | Lumileds Lighting Us Llc | コンフォーマルに被覆された蛍光変換発光半導体構造を製造するための電気泳動の使用 |
JP2005093896A (ja) * | 2003-09-19 | 2005-04-07 | Stanley Electric Co Ltd | 半導体発光装置 |
JP2005209852A (ja) * | 2004-01-22 | 2005-08-04 | Nichia Chem Ind Ltd | 発光デバイス |
JP2006135300A (ja) * | 2004-10-04 | 2006-05-25 | Stanley Electric Co Ltd | 半導体発光装置の製造方法 |
JP2007043074A (ja) * | 2005-06-27 | 2007-02-15 | Toshiba Lighting & Technology Corp | 照明装置 |
Family Cites Families (9)
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JP2002033520A (ja) | 2000-07-14 | 2002-01-31 | Toshiba Electronic Engineering Corp | 半導体発光装置 |
US6791116B2 (en) * | 2002-04-30 | 2004-09-14 | Toyoda Gosei Co., Ltd. | Light emitting diode |
JP4504056B2 (ja) * | 2004-03-22 | 2010-07-14 | スタンレー電気株式会社 | 半導体発光装置の製造方法 |
US7517728B2 (en) * | 2004-03-31 | 2009-04-14 | Cree, Inc. | Semiconductor light emitting devices including a luminescent conversion element |
JP2006093672A (ja) * | 2004-08-26 | 2006-04-06 | Toshiba Corp | 半導体発光装置 |
US7842526B2 (en) * | 2004-09-09 | 2010-11-30 | Toyoda Gosei Co., Ltd. | Light emitting device and method of producing same |
JP2007109915A (ja) * | 2005-10-14 | 2007-04-26 | Stanley Electric Co Ltd | 発光ダイオード |
US8044418B2 (en) * | 2006-07-13 | 2011-10-25 | Cree, Inc. | Leadframe-based packages for solid state light emitting devices |
US8092735B2 (en) * | 2006-08-17 | 2012-01-10 | 3M Innovative Properties Company | Method of making a light emitting device having a molded encapsulant |
-
2007
- 2007-08-07 JP JP2007205597A patent/JP5043554B2/ja not_active Expired - Fee Related
-
2008
- 2008-08-06 CN CN200810131329.6A patent/CN101364629B/zh not_active Expired - Fee Related
- 2008-08-07 US US12/187,570 patent/US7859001B2/en not_active Expired - Fee Related
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH07111343A (ja) * | 1993-10-13 | 1995-04-25 | Matsushita Electron Corp | 光電装置 |
JP2001111109A (ja) * | 1999-10-07 | 2001-04-20 | Sharp Corp | 窒化ガリウム系化合物半導体発光素子 |
JP2003069086A (ja) * | 2001-06-11 | 2003-03-07 | Lumileds Lighting Us Llc | コンフォーマルに被覆された蛍光変換発光半導体構造を製造するための電気泳動の使用 |
JP2005093896A (ja) * | 2003-09-19 | 2005-04-07 | Stanley Electric Co Ltd | 半導体発光装置 |
JP2005209852A (ja) * | 2004-01-22 | 2005-08-04 | Nichia Chem Ind Ltd | 発光デバイス |
JP2006135300A (ja) * | 2004-10-04 | 2006-05-25 | Stanley Electric Co Ltd | 半導体発光装置の製造方法 |
JP2007043074A (ja) * | 2005-06-27 | 2007-02-15 | Toshiba Lighting & Technology Corp | 照明装置 |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2011024934A1 (ja) * | 2009-08-27 | 2011-03-03 | 京セラ株式会社 | 発光装置 |
KR20120017703A (ko) * | 2010-08-19 | 2012-02-29 | 서울반도체 주식회사 | 렌즈 및 그것을 포함하는 발광장치 |
KR101708025B1 (ko) * | 2010-08-19 | 2017-02-20 | 서울반도체 주식회사 | 렌즈 및 그것을 포함하는 발광장치 |
JP3180453U (ja) * | 2012-05-24 | 2012-12-20 | 盈勝科技股▲ふん▼有限公司 | 多層式構造を具える一体化高効率照明装置 |
JP2018085448A (ja) * | 2016-11-24 | 2018-05-31 | スタンレー電気株式会社 | 半導体発光装置 |
JP2018148110A (ja) * | 2017-03-08 | 2018-09-20 | スタンレー電気株式会社 | 発光装置及びその製造方法 |
JP2019057578A (ja) * | 2017-09-20 | 2019-04-11 | 日亜化学工業株式会社 | 発光装置 |
JP7096473B2 (ja) | 2017-09-20 | 2022-07-06 | 日亜化学工業株式会社 | 発光装置 |
JP2018050082A (ja) * | 2017-12-28 | 2018-03-29 | 日亜化学工業株式会社 | 発光装置及び発光装置の製造方法 |
WO2023176301A1 (ja) * | 2022-03-14 | 2023-09-21 | スタンレー電気株式会社 | 半導体発光装置 |
Also Published As
Publication number | Publication date |
---|---|
US7859001B2 (en) | 2010-12-28 |
US20090039369A1 (en) | 2009-02-12 |
CN101364629B (zh) | 2012-08-22 |
CN101364629A (zh) | 2009-02-11 |
JP5043554B2 (ja) | 2012-10-10 |
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