JP7280820B2 - 反射性側面コーティングを伴う発光デバイスの製造方法 - Google Patents
反射性側面コーティングを伴う発光デバイスの製造方法 Download PDFInfo
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/644—Heat extraction or cooling elements in intimate contact or integrated with parts of the device other than the semiconductor body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0075—Processes relating to semiconductor body packages relating to heat extraction or cooling elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/642—Heat extraction or cooling elements characterized by the shape
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Description
本出願は、2016年7月28日に出願された米国仮特許出願第62/368067号、2016年7月28日に出願された欧州特許出願第16190895.9号、および2017年7月27日に出願された米国特許出願第15/661196号について優先権を主張するものであり、これらは完全に明らかにされているかのように参照として包含されている。
Claims (5)
- 発光デバイスを製造する方法であって、
サポートの上に発光ダイオード(LED)ダイを置くステップであり、前記LEDダイは、
半導体構造体と、
前記半導体構造体の上に形成された波長変換エレメントと、
を含む、ステップと、
前記半導体構造体の周囲に絶縁性側面コーティングを形成するステップと、
前記波長変換エレメントの周囲で、かつ、前記絶縁性側面コーティングの上にスタックして反射性側面コーティングを形成するステップであり、
該反射性側面コーティングは、前記波長変換エレメントの第1表面と同一平面である第1表面を有しており、かつ、
前記反射性側面コーティングの底面は、前記絶縁性側面コーティングの上面に配置されている、
ステップと、
を含み、
前記絶縁性側面コーティングを形成するステップは、
前記LEDダイの上に第1ステンシルを置くステップであり、該第1ステンシルは前記LEDダイの周囲にトレンチを形成する、ステップと、
前記トレンチの中へ絶縁材料を注入するステップと、
前記絶縁材料が前記半導体構造体の1つまたはそれ以上の側壁に向かって拡がることができるように前記第1ステンシルを取り除くステップと、
を含む、方法。 - 前記トレンチは、前記半導体構造体の高さよりも深く、かつ、
前記絶縁材料は、前記第1ステンシルが取り除かれたときに前記半導体構造体の1つまたはそれ以上の側面を実質的にカバーするために十分な量が注入されている、
請求項1に記載の方法。 - 前記反射性側面コーティングを形成するステップは、
前記LEDダイの上に第2ステンシルを置くステップであり、該第2ステンシルは前記LEDダイの周囲にトレンチを形成する、ステップと、
前記トレンチの中へ反射材料を注入するステップと、
前記反射材料が前記波長変換エレメントの1つまたはそれ以上の側面に向かって拡がることができるように前記第2ステンシルを取り除くステップと、
を含む、請求項1に記載の方法。 - 前記反射材料は、前記第2ステンシルが取り除かれたときに、前記波長変換エレメントの表面の上にオーバーフローすることなく、前記波長変換エレメントの1つまたはそれ以上の側面を実質的にカバーするために十分な量が注入されている、
請求項3に記載の方法。 - 前記反射性側面コーティングは、少なくとも200W/mKの熱伝導率を有し、かつ、銀を含む、
請求項1に記載の方法。
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JP2023079067A JP2023100965A (ja) | 2016-07-28 | 2023-05-12 | 反射性側面コーディングを伴う発光デバイスパッケージ |
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US201662368067P | 2016-07-28 | 2016-07-28 | |
US62/368,067 | 2016-07-28 | ||
EP16190895 | 2016-09-27 | ||
EP16190895.9 | 2016-09-27 | ||
US15/661,196 | 2017-07-27 | ||
US15/661,196 US10193043B2 (en) | 2016-07-28 | 2017-07-27 | Light emitting device package with reflective side coating |
PCT/US2017/044428 WO2018023027A1 (en) | 2016-07-28 | 2017-07-28 | Light emitting device package with reflective side coating |
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JP2019526173A JP2019526173A (ja) | 2019-09-12 |
JP7280820B2 true JP7280820B2 (ja) | 2023-05-24 |
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JP2023079067A Pending JP2023100965A (ja) | 2016-07-28 | 2023-05-12 | 反射性側面コーディングを伴う発光デバイスパッケージ |
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EP (1) | EP3491678B1 (ja) |
JP (2) | JP7280820B2 (ja) |
KR (1) | KR102208504B1 (ja) |
CN (2) | CN115000278A (ja) |
TW (1) | TWI735627B (ja) |
WO (1) | WO2018023027A1 (ja) |
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WO2019243376A1 (en) | 2018-06-18 | 2019-12-26 | Ipsen Biopharm Limited | Intramuscular injection of botulinum toxin for the treatment of vulvodynia |
US11189757B2 (en) * | 2019-12-12 | 2021-11-30 | Lumileds Llc | Light emitting diodes with reflective sidewalls comprising porous particles |
JP7388908B2 (ja) * | 2019-12-17 | 2023-11-29 | シャープ福山レーザー株式会社 | 表示装置 |
CN116759516A (zh) * | 2022-09-13 | 2023-09-15 | 泉州三安半导体科技有限公司 | 发光装置及发光元件 |
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- 2017-07-28 WO PCT/US2017/044428 patent/WO2018023027A1/en unknown
- 2017-07-28 KR KR1020197006136A patent/KR102208504B1/ko active IP Right Grant
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TWI735627B (zh) | 2021-08-11 |
JP2023100965A (ja) | 2023-07-19 |
JP2019526173A (ja) | 2019-09-12 |
TW201817038A (zh) | 2018-05-01 |
EP3491678A1 (en) | 2019-06-05 |
CN115000278A (zh) | 2022-09-02 |
EP3491678B1 (en) | 2021-03-03 |
KR20190039541A (ko) | 2019-04-12 |
WO2018023027A1 (en) | 2018-02-01 |
CN109844970B (zh) | 2023-04-04 |
CN109844970A (zh) | 2019-06-04 |
KR102208504B1 (ko) | 2021-01-28 |
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