JP6447557B2 - 発光装置の製造方法 - Google Patents
発光装置の製造方法 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims description 16
- 239000007788 liquid Substances 0.000 claims description 91
- 229920005989 resin Polymers 0.000 claims description 75
- 239000011347 resin Substances 0.000 claims description 75
- 239000000758 substrate Substances 0.000 claims description 56
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 35
- 238000002156 mixing Methods 0.000 claims description 21
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- 239000002245 particle Substances 0.000 claims description 7
- 239000011572 manganese Substances 0.000 claims description 3
- 239000011259 mixed solution Substances 0.000 claims description 3
- -1 potassium fluorosilicate phosphor Chemical group 0.000 claims description 2
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 claims 1
- 229910052748 manganese Inorganic materials 0.000 claims 1
- 238000003756 stirring Methods 0.000 description 28
- 239000010410 layer Substances 0.000 description 15
- 239000004065 semiconductor Substances 0.000 description 14
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- 238000000465 moulding Methods 0.000 description 5
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- 239000003795 chemical substances by application Substances 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
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- 150000004767 nitrides Chemical class 0.000 description 3
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- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 2
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- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- 229910003564 SiAlON Inorganic materials 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
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- 238000004090 dissolution Methods 0.000 description 1
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- 239000010408 film Substances 0.000 description 1
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- 238000010304 firing Methods 0.000 description 1
- 229940104869 fluorosilicate Drugs 0.000 description 1
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- 230000001788 irregular Effects 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
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- 238000007639 printing Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000000967 suction filtration Methods 0.000 description 1
- 238000001721 transfer moulding Methods 0.000 description 1
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- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
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- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
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- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/96—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being encapsulated in a common layer, e.g. neo-wafer or pseudo-wafer, said common layer being separable into individual assemblies after connecting
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Description
粒子状の蛍光体を準備する工程と、発光素子が載置された基板を準備する工程と、2液硬化型樹脂成分である第1樹脂液及び第2樹脂液を準備する工程と、第1樹脂液中に蛍光体を混合させて第1混合液を作製する工程と、第1混合液中に第2樹脂液を混合させて第2混合液を作製する工程と、発光素子上に第2混合液を配置し、第2混合液を硬化して封止部材とする工程と、を備える発光装置の製造方法。
以下、各工程について詳説する。
粒子状の蛍光体を準備する。蛍光体は、例えば、平均粒径が3μm〜30μm程度の粒子であり、その形状は球形又は不定形である。ここで、平均粒径は、D50により定義することができる。また、蛍光体の平均粒径は、例えば、レーザ回折散乱法、画像解析法(走査型電子顕微鏡(SEM)、透過型電子顕微鏡(TEM))などにより測定することができる。レーザ回折散乱法の粒径測定装置は、例えば島津製作所社製のSALDシリーズ(例えばSALD−3100)を用いることができる。画像解析法は、例えばJIS−Z8827−1:2008に準ずる。
図2(a)に示すように、発光素子14が載置された基板11を準備する。この工程は、発光素子が載置された基板を購入して準備してもよく、基板及び発光素子を準備して、基板上に発光素子を載置する工程を経て準備してもよい。また、図2(a)などでは1つの発光素子が載置された基板を例示しているが、通常の工程においては1枚の基板には複数の発光素子が載置されている。すなわち、1枚の基板で複数の発光装置を形成しており、このような発光装置の集合体を切断して個片化することで個々の発光装置とすることができる
2液硬化型樹脂成分である第1樹脂液及び第2樹脂液を準備する。第1樹脂液と第2樹脂液は、両者を混合することで化学反応が起こり硬化する。
第1樹脂液と、粒子状の蛍光体と、を混合して第1混合液を作製する。蛍光体は、第1混合液に対して、10質量%〜80質量%程度混合することができる。
第1混合液と第2樹脂液とを混合して第2混合液を作製する。
得られた第2混合液12Bは、混合容器からモールド装置のディスペンサに移す。
図2(b)に示すように、基板11上に載置された発光素子14の上方にディスペンサのノズル140を配置し、ノズル140から第2混合液12Bをポッティングする。第2混合液12Bの量は、発光素子14の全体が埋設される量、さらに、ワイヤを用いている場合はワイヤも埋設される量が好ましい。
発光装置として、横幅4.0mm、縦幅3.6mm、厚さ2.05mmの側面発光型の発光装置の製造方法を説明する。図2(a)〜図2(c)は実施例1に係る製造工程を示す。
11…基板
11a…導電部材(リード)
11b…母材(成形樹脂)
12…封止部材
14…発光素子
14a…半導体層
14b…電極
16…ワイヤ
100…混合容器
120A…第1樹脂液
120B…第2樹脂液
P…蛍光体
12A…第1混合液
12B…第2混合液
140…ノズル
Claims (4)
- 粒子状の蛍光体を準備する工程と、
発光素子が載置された基板を準備する工程と、
2液硬化型樹脂成分である、第1樹脂液及び第2樹脂液を準備する工程と、
前記第1樹脂液中に前記蛍光体を混合して第1混合液を作製する工程と、
前記第1混合液を静置する工程と、
前記第1混合液を静置した後、前記第1混合液中に、前記第2樹脂液を、第1混合液の混合時間よりも短時間で混合して第2混合液を作製する工程と、
前記発光素子上に前記第2混合液を配置し、前記第2混合液を硬化して封止部材とする工程と、を備える発光装置の製造方法。 - 前記蛍光体の粒径は、3μm以上30μm以下である請求項1記載の発光装置の製造方法。
- 前記蛍光体は、前記第1混合液に対して10質量%〜80質量%である請求項1又は請求項2記載の発光装置の製造方法。
- 前記蛍光体は、マンガンで賦活されたフッ化珪酸カリウム系蛍光体である請求項1〜請求項3のいずれか1項に記載の発光装置の製造方法。
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JP2016059655A JP6447557B2 (ja) | 2016-03-24 | 2016-03-24 | 発光装置の製造方法 |
US15/466,959 US10224465B2 (en) | 2016-03-24 | 2017-03-23 | Method of manufacturing light emitting device |
US16/251,862 US10930822B2 (en) | 2016-03-24 | 2019-01-18 | Method of manufacturing light emitting device |
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WO2020003789A1 (ja) * | 2018-06-29 | 2020-01-02 | 日亜化学工業株式会社 | 発光装置の製造方法および発光装置 |
JP6852745B2 (ja) * | 2018-06-29 | 2021-03-31 | 日亜化学工業株式会社 | 発光装置の製造方法および発光装置 |
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DE3531914A1 (de) * | 1985-09-07 | 1987-03-19 | Roehm Gmbh | Verfahren zur herstellung haertbarer giessharze |
US4652395A (en) * | 1985-10-21 | 1987-03-24 | The W. W. Henry Company | Taggant composition |
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