1307總 九、發明說明： 【發明所屬之技術領域】 本發明關於發光二極體（LED)之製造方法，且更特 定言之，本發明關於發光二極體之改良製造方法，其優於 發光二極體之習知製造方法且可適當地用作背光之光源。 【先前技術】1307 IX. DESCRIPTION OF THE INVENTION: TECHNICAL FIELD OF THE INVENTION The present invention relates to a method of fabricating a light-emitting diode (LED), and more particularly, to an improved method of fabricating a light-emitting diode, which is superior to light-emitting The conventional manufacturing method of the diode is suitably used as a light source for the backlight. [Prior Art]
為了製造用於为光之光源的發光二極體（light emitting 出0如）’已使用一種將發光晶片（light emitting chip)安裝 於印刷電路板或引雜架上且接著由觀成形製程來形成 用於包封發光晶片之模製部分（m()lding卩她⑽）的方法。 圖1至圖3為說明晶片型發光二極體之習知製造方法的 圖’其中圖1 (a)以及圖2 (a)為平面圖，圖丨⑴以 l=(b)為剖視圖，且圖3為展示習知晶片型發光二極 體的透視圖。 ’發光㉟^安裝於諸如印刷電路板或引線 r 上。基板U具有引線電極（leadelectrode) 圖’2且，晶片經由導線13電連接至引線電極。 模具光晶I12的基板U定位於 形成模製部分14。f知地成形製程來 槽(_er)，且發光:二:製::可流經的流 分離基板η以獲;片二:形成。接著’經由鋸切製程 根據先前技術，優^在^之個別發光二極體。 ;了猎由使用轉庄成形製程形 1307976 21726pif = 生產晶片型發光二極體，且歸因於較短 具有大比重之材料（諸如，無機碟光體）可均 一地分散於模製部分14中。 勺 然^由於用於包封發光晶片12之模製部分Μ為透 朝本'此自發光晶片12發出之光經由模製部分U之整 二=㈣。因此，缺點在於光之方向角的範圍為較 致方向角之所要範圍_發光強度減小，且不用 於月光的光增加，從而導致光之更大損失。此外，由於 ，兩侧之切割表面與如圖3中所示之模製部分的那也^ 表面為冋廣衍(coextensive)的，因此缺點在於第二 不可形成於模製部分14之切割表面上。 、、刀 同時’為了改良方向角之所要範圍内的發光強产 使用反射_發光二_之製造方法，其巾反射器^著於 基板或藉由射出成形不透明合成樹脂來形成，發光晶片安 臬於反射益上且接著透明模製部分形成於反射器内。 此反射器型發光二極體之製造方法的優點^於可改良 方向角之所要範®⑽發光強度。⑼，由於難以瘦由轉 注成形製程來形成透明模製部分，因此已大體上使用將液 態樹脂觀至反射H _方法。由於在粒㈣樹脂之製 程中應將液態樹脂各別地灌注至各別反射器内，因此降低 了生產力。此外，由於耗費大量時間執行模製製程使得具 有大比重之磷光體下沉，因此難以提供其中均一地分散 鱗光體的模製部为。此外，附著反射器或使用射出 形成反射器之技術具有減小發光二極體中之每一者之厚度 的限制。 【發明内容】 &ΜΛΜ. 轉注光二極體之製造方法’其中由 面所包_區_。、衣‘禮於由基板之切割表 光二發光二極體之製造方法，發 模製部: 拉製部分之側表面上的對稱第二 更進—步目標為提供具妓抑之發光二極 肢的衣t方法，方法能夠防止發光二極體之厚度增加。 益術解決方銮 為了解決技術問題，根據本發明之態 的製造方法包含準備基板之步驟。將料 ^且將中間蚊⑽基板上。中間板具有用於接納發= 曰曰片的通孔以及在μ板之上表面上胁料通孔彼此的 凹槽。接著，藉由將凹槽用作流槽來用透明模製材料執行 轉注成形製程以形成填充通孔之第一模製部分。此後，移 除中間板，且將基板分離成個別發光二極體。因此，由^ 第一模製部分形成於中間板之通孔中，因此有可能提供第 一模製部分定位於由基板之切割表面所包圍的區域内的發 光二極體。 1307976 21726pif 同時，透明模製材料可含有鱗光粉。因此 用含有填光^之透明模製材料來執行轉注成形製程而^ 第一模製勒，因此可防止確光體下沉 在安裝發光晶片之前可將中間板定位於基板_1此 後，可將發光晶片安裝於中間板之通孔中。 同時’在本々發明之實施例中，在移除中間板之後，可 形成用於圍繞第-模製部分之至少側表面的第二模 在本發明之-些實施例中，可藉由 執行模製以覆蓋第一模製部分且藉由二= 直至曝露第-模製部分之上表面為止來形成透第月=: 分。或者，可错㈣不透賴製材料執行鄕以填充第一 ΐ製=細隔且曝露第一模製部分之上表面來形成 弟二U刀。用不透明模製材料形成之第二模製部分可 充當反射如改良方向角之所要範肋 第二模製部分經形成以與第—模製部分齊平，:有= Ρ方止發光二極體之厚度的增加。 U此有叮月匕 林發明之—些實施例中，可用具有用於覆蓋模 w t m表面之透鏡部分的透明模製材料^模f第 透鏡部分用於聚焦在方向角之範== 曰曰片1之光’藉此改良發光強度。 f部圍繞第一模製部分之至少側表面的第二模 蓋第-模Lt彼此間隔開的。此外，第二模製部分可覆 、衣°卩分之上表面且含有磷光體。因此，有可能提 供含有磷光體之第二模製部分均—地形成於第一模製部分 上的發光二極體。可藉由使用具有用於接納第〆模製部分 之通孔的另一中間板來形成第二模製部分。 、根據本發明之另一態樣之發光二極體的製造方法包含 準ί基板之步驟。將發光晶片安裝於基板上，及形成用於 $蓋各別發光晶片之第-透明模製部分。接著，形成用於 if第—模製部分之侧表面的第二不透明模製部分，且將 土板分離成個別發光二極體。因此 厚度增加且可改良方向角之所要$々二J月匕衣11防止 二極體。 之所要⑱_之發轉度的發光 可藉由用不透明模製材料執行模f 分且藉由移除不透丁^以後盖#拉製部 表面為止來形成第直;:露第:模歸^ 製材料來執行模製以填充第:可错由用不透明模 第-模製部分之上表面來形成第:以糊隔且曝露 有利效果^ 叫刀。 苐-====轉注成形製程形成之 =第-模製部分之;表面上：：包圍的， 的發先二極體。因此，第二模㈣成弟二模製部分 :具有透鏡部分，藉此改良方:==成以充當反射 強度。若選擇具有反射角之所要範圍内的發光 二極體相反，有可能則與習知 曰加’且有可能顯著改良方向角之考=二極體之厚度的 聲靶圍内的發光強度。 】0 1307976 21726pif 【實施方式】 下^將參看隨附圖式詳細描述本發明之實施例。以下 供為實例，以便將本發明之精神充分傳 遞至.、、、白此技藝者。因此，本發明並不限於以下 而是可以各種不同形式來實施。為圖式中之方便起 以誇張方式來表示組件之寬度、長度以及厚度ti個： 明書中，由相同參考數字來指示相同元件。 ” ϊ ϋ圖9為說明根據本發明之實施例之發光二極體 及圖8(a)為平面圖，且圖4(b)、圖5(b)、J ) 以及圖8 (b)為剖視圖。 框安裝於諸如印刷電路板或引線 忙木之基板31上。如圖中所示，發光晶月32 二32广由¥線33各別地f連接至引線電i發光晶片％ 中之母一者可為單接合晶粒，其中導線33中之每一者接八 中中限於此。發光晶片32可為雙接合曰^ ^ -中¥線33各別地接合至兩個電極，或為在並不使用 m3的情況下電連接至基板之引線電極的覆晶。 的美:t圖二間板41定位於其上安裝有發光晶片32 於^ 。 3板41具有用於各別地接納發光晶片32 於中之通孔44，以及在中間板41之 峨，彼此的凹槽43。因此，發光晶片』各= 疋位於中間板41之通孔中。 11 1307976 21726pif 門二：對其材料並無限制’只要在轉注成形製程期 儘管通孔44展示為矩形柱之形式 二外，採取諸如截角錐或錐體之各種形式。 曰所示凹槽43可按列連接通孔44彼此， 但其不限於此，而是可以各種形式連接。 片32儘例中在安裝中間板41之前安裝發光晶 美板3丨。脚，在將中間板41定位於 基板^上之後’可將發光晶片32安裝於通孔44中。 且將基板31定位於下模具51與上模具53之間， 如：槽43用作流槽來用透明模製材料(例 模製樹脂）執行轉注成形製程，11此形成第一 且右^於f光—極體之習知製造方法，上模具53可並不 製材料沿中間板41'之、爾^ 之凹扎43在中間板41上流動，藉此填 =孔44。此後，透明模製材料經固化以形成第一模製部 为34 〇 體。模料可含有擴散劑Uiffusingagent)或填光 觀絲製程來形成第—難部分34，因此 "此形成其中均—地分散有碟光體 先體之類如將發光μ 32之光“ 其起’圖7展示自Τ模具51以及上模具53取出 土板的狀悲'。中間板41仍定位於基板31上，且中間板 12In order to manufacture a light-emitting diode for light source, a light emitting chip has been mounted on a printed circuit board or a lead frame and then formed by a forming process. A method for encapsulating a molded portion (m() inging her (10)) of a light-emitting chip. 1 to 3 are views showing a conventional manufacturing method of a wafer-type light-emitting diode. FIG. 1(a) and FIG. 2(a) are plan views, and FIG. 1(1) is a cross-sectional view taken at l=(b), and FIG. 3 is a perspective view showing a conventional wafer type light emitting diode. The illuminating light 35 is mounted on, for example, a printed circuit board or a lead r. The substrate U has a lead electrode diagram '2 and the wafer is electrically connected to the lead electrode via the wire 13. The substrate U of the mold photocrystal I12 is positioned to form the molded portion 14. f knowing the forming process to the groove (_er), and illuminating: two: system:: flowable flow separation substrate η to obtain; slice two: formation. Then 'by sawing process according to the prior art, the individual light-emitting diodes are excellent. The hunting is performed by using the forming process 1307976 21726pif = to produce a wafer type light emitting diode, and the material having a large specific gravity (such as an inorganic optical body) can be uniformly dispersed in the molding portion 14 . The scooping is because the molded portion for encapsulating the luminescent wafer 12 is permeable to the light emitted from the self-illuminating wafer 12 via the molding portion U = (4). Therefore, the disadvantage is that the direction angle of the light is in the range of the desired direction angle _ the illuminating intensity is reduced, and the light of the moonlight is not increased, resulting in a greater loss of light. Further, since the surface of the cut surface on both sides and the molded portion as shown in Fig. 3 are also coextensive, the disadvantage is that the second portion cannot be formed on the cut surface of the molded portion 14. . At the same time, the knives are used to improve the illuminance in the desired range, and the reflection illuminator is used in the manufacturing method. The towel reflector is formed on the substrate or formed by injection molding an opaque synthetic resin. The reflective portion is then formed and then the transparent molded portion is formed in the reflector. The advantages of the method of manufacturing the reflector type light-emitting diode are to improve the direction of the direction angle (10). (9) Since the transparent molding portion is formed by the transfer molding process, it is generally used to observe the liquid resin to the reflection H _ method. Since the liquid resin is separately poured into the respective reflectors in the process of the granular (tetra) resin, productivity is lowered. Further, since it takes a lot of time to perform the molding process so that the phosphor having a large specific gravity sinks, it is difficult to provide a molded portion in which the scale body is uniformly dispersed. Moreover, the technique of attaching a reflector or using an emitter to form a reflector has a limitation of reducing the thickness of each of the light emitting diodes. SUMMARY OF THE INVENTION & ΜΛΜ. The manufacturing method of the light-emitting diode 'where the package is _ zone_. , the manufacturing method of the cut-off light-emitting diode of the substrate, the hair-molding part: the symmetry on the side surface of the drawn part, the second more advanced step is to provide a degrading light-emitting diode The method of coating t can prevent the thickness of the light-emitting diode from increasing. In order to solve the technical problem, the manufacturing method according to the present invention includes the step of preparing a substrate. The material will be placed on the middle mosquito (10) substrate. The intermediate plate has a through hole for receiving the hair piece and a groove for the through hole at the upper surface of the μ board. Next, a transfer molding process is performed with the transparent molding material by using the groove as a launder to form a first molded portion filling the through hole. Thereafter, the intermediate plate is removed and the substrate is separated into individual light-emitting diodes. Therefore, the first molded portion is formed in the through hole of the intermediate plate, so that it is possible to provide the light-emitting diode in which the first molded portion is positioned in the region surrounded by the cut surface of the substrate. 1307976 21726pif At the same time, the transparent molding material may contain scale powder. Therefore, the first molding is performed by using a transparent molding material containing a light filling material, thereby preventing the light body from sinking and positioning the intermediate plate on the substrate_1 before mounting the light emitting wafer. The luminescent wafer is mounted in a through hole of the intermediate plate. Meanwhile, in the embodiment of the present invention, after removing the intermediate plate, a second mold for surrounding at least a side surface of the first molded portion may be formed, in some embodiments of the present invention, by performing Molded to cover the first molded portion and formed by the second = until the upper surface of the first molded portion is exposed. Alternatively, the erroneous (four) non-permeable material may be entangled to fill the first ==fine septum and expose the upper surface of the first molded portion to form a second U-knife. The second molded portion formed of the opaque molding material can serve as a desired rib of the reflection direction angle, and the second molded portion is formed to be flush with the first molded portion, and has a Ρ square stop light emitting diode The increase in thickness. U. In this embodiment, a transparent molding material having a lens portion for covering the surface of the mold wtm can be used. The lens portion is used for focusing on the direction angle == 曰曰1 light' to improve the luminous intensity. The second portion of the f-part surrounding the at least side surface of the first molding portion is spaced apart from each other by the first mold Lt. Further, the second molded portion may cover, coat, and contain the phosphor. Therefore, it is possible to provide a light-emitting diode in which the second molded portion containing the phosphor is uniformly formed on the first molded portion. The second molded portion can be formed by using another intermediate plate having a through hole for receiving the second molded portion. A method of fabricating a light-emitting diode according to another aspect of the present invention includes the step of preparing a substrate. The luminescent wafer is mounted on the substrate and a first transparent molded portion for covering the respective luminescent wafers is formed. Next, a second opaque molded portion for the side surface of the if-mold portion is formed, and the earth plate is separated into individual light-emitting diodes. Therefore, the thickness is increased and the direction angle can be improved to prevent the diode from being removed. The illuminating of the radiance of the ray can be performed by performing the modulo f division with the opaque molding material and by removing the surface of the drawing portion after the opaque cover is removed; ^ Material is used to perform molding to fill the first: the wrong surface is formed by using the upper surface of the opaque mold-molded portion: the paste is separated and the advantageous effect is exposed.苐-====The formation process of the transfer molding process = the first molded part; the surface:: surrounded by the first diode. Therefore, the second mode (4) is a two-part molded part: having a lens portion, whereby the modified side: == becomes a reflection intensity. If the illuminating diode in the desired range having the angle of reflection is selected to be reversed, it is possible to increase the illuminating intensity in the acoustic target circumference with the thickness of the tester = the thickness of the diode. 0 1307976 21726pif [Embodiment] The embodiments of the present invention will be described in detail with reference to the accompanying drawings. The following examples are provided to fully convey the spirit of the present invention to the skilled person. Therefore, the invention is not limited to the following but may be embodied in various different forms. For the convenience of the drawings, the width, length and thickness of the components are indicated in an exaggerated manner: In the specification, the same reference numerals are used to refer to the same elements. FIG. 9 is a plan view illustrating a light emitting diode according to an embodiment of the present invention and FIG. 8(a), and FIGS. 4(b), 5(b), J) and FIG. 8(b) are cross-sectional views. The frame is mounted on a substrate 31 such as a printed circuit board or a lead-free wood. As shown in the figure, the light-emitting crystal 32 32 is connected by a line 33 to the mother of the lead-light i-emitting wafer %. The single bond die may be a single bond die, wherein each of the wires 33 is limited to this. The light emitting chip 32 may be a double bond ^ ^ ^ - the middle wire 33 is separately bonded to the two electrodes, or The flip chip of the lead electrode electrically connected to the substrate without using m3. The photo of the second interposer 41 is positioned on which the light emitting chip 32 is mounted. The 3 plate 41 has a function for separately receiving the light. The through holes 44 of the wafer 32 and the recesses 43 between the intermediate plates 41. Therefore, the light-emitting wafers are each located in the through-holes of the intermediate plate 41. 11 1307976 21726pif Door 2: The material is Unlimited 'as long as the through hole 44 is shown in the form of a rectangular column in the transfer forming process, various shapes such as a truncated cone or a cone are taken. The grooves 43 may be connected to the through holes 44 in a row, but are not limited thereto, but may be connected in various forms. The sheet 32 is mounted with a light-emitting crystal plate 3 尽 before the intermediate plate 41 is mounted. After the intermediate plate 41 is positioned on the substrate, the luminescent wafer 32 can be mounted in the through hole 44. The substrate 31 is positioned between the lower mold 51 and the upper mold 53, for example, the groove 43 is used as a flow channel. The transparent molding material (for example, molding resin) performs a transfer molding process, 11 which forms a first manufacturing method of the first and right optical body, and the upper mold 53 may not have a material along the intermediate plate 41'. The recess 43 flows on the intermediate plate 41, thereby filling the hole 44. Thereafter, the transparent molding material is cured to form a first molded portion of 34 carcass. The molding material may contain a diffusing agent Uiffusingagent or fill The light-on-wire process forms the first-difficult portion 34, and thus the formation of the light-precursor precursor such as the light-emitting body 32 is "distributed" from the Τ mold 51 and the upper portion. The mold 53 takes out the sorrow of the soil plate. The intermediate plate 41 is still positioned on the substrate 31, and the intermediate plate 12
1307976 21726pif ^ ^通孔44中填充有第一模製部分34。剩餘模製部分34a 亦真充於中間板41之凹槽43中。 i看圖8，自基板31移除中間板41。因此，亦連同中 間板41 一起移除填充於中間板41之凹槽43中的模製部分 。可採用各種方法來容易地將通孔44内之第一模製部 刀4與剩餘模製部分34a分離。舉例而言，可在凹槽43 以及通孔44連接於—起之位置處減少凹槽43之寬度或深 度，使得可容易地將剩餘模製部分34a與第一模製部分34 分離。 參看圖9，基板31接受鋸切製程以使得可將基板31 分離成個別發光二極體。可使用刀片或雷射來執行鋸切製 程。在鑛切製程之後，清理切割表面。因此，如圖中所示， 獲知了第一模製部分34定位於由基板31之切割表面所包 圍之區域内的晶片型發光二極體。 根據本發明，由於使用凹槽43提供於中間板41之上 表面中的中間板41 ’因此連同中間板41 一起移除已填充 用作流槽之凹槽43的模製部分34a。因此’不同於先前技 術，製造出了第一模製部分34定位於由基板31之切割表 面所包圍之區域内的發光二極體。 圖10至圖12為說明根據本發明之另一實施例之發光 二極體之製造方法的圖，其中圖11 (a)為平面圖，且圖 Π ( b )為剖視圖，且圖1 〇以及圖12分別為剖視圖以及平 面圖。 參看圖10，中間板41用於形成用於分別覆蓋基板31 13 上之發光晶片32的第-模製部分34，且接著如上文 圖4 1圖S所描述之移除中間板41。此後，塗 明看 製材料以形成用於覆蓋其上形成有第—模吴 部分34之間的間隔且覆蓋第一模製部分％。 、衣 不透明耐熱樹脂（諸如，具有混合有加 樹脂或間可用作不透明模製材料。可借念， (諸如’網板印刷製程、轉注成形製程；成法 來模製不透日賴製材料且可由料1程） 參看圖11，借助於研磨製程等來移除； 直直曝露第一模製部分34之上表面為止1月巧材料 部分％覆蓋第一模製部分34之側 口=弟=製 分34之上表面。 且曝路罘一模製部 在本貫施例中’用不透賴製 分34且部分地移除不透明模製材料，使模製部 分35秋以覆蓋第一模製部分34之側表面件成弟二模製部 ，經塗覆而並不ίί:之施例中’不透明模製材料可 r，可去除部分地移除不透明 ^面。在此種狀況 «吏上輪具與第一模製部分34之卜矣f放於板具内使得 If程或射出成·程形成第二St觸公;力於轉 此方法。 依衣4分35來實施 參看圖12,執行鑛切製程以將其上形成有第二模製部 14 I3〇7?76if 分35的基板分離成個別發光二極體。因此，製造出了具有 第二模製部分35之發光二極體，第二模製部分35由不透 明模製材料製成且對稱地圍繞第一模製部分3 4之侧表面。 第二模製部分35可用作習知反射器，使得可改良方向 角之所要範圍内的發光強度。此外，由於第二模製部分35 具有與第一模製部分34相同的高度，因此，即使在採用第 二模製部分35的情況下並不增加發光二極體之厚度。 同時，在採用反射器之習知發光二極體中，歸因於反 射器形狀以及高溫下易損壞的反射器材料，難以借助於轉 注成形製程來形成透明模製部分。然而，由於在此實施例 中在形成第一模製部分34之後形成第二模製部分35，因 此可在不受第二模製部分之材料以及形狀之限制的情況下 借助於轉注成形製程來形成第一模製部分。 此外，儘管在此實施例中借助於使用具有通孔44以及 凹槽43之中間板41的轉注成形製程來形成第一模製部分 34，但可借助於各種方法（諸如，除轉注成形製程以外之 習知網板印刷製程以及習知射出成形製程）來形成第一模 製部分34。 同時，第二模製部分35可具有用於反射方向角之所要 範圍内自發光晶片32發出之光的預定傾斜表面。在本實施 例中，第二模製部分35之傾斜表面沿第一模製部分34之 侧表面而形成，且第一模製部分34之側表面由中間板41 之通孔44的形狀來判定。因此，可藉由適當調節通孔44 之形狀來控制第二模製部分35之傾斜表面。 15 例之發之進-步實施 所描述之歸中間板41。此後接2 =參龍4至圖8 内，且有透鏡狀凹部的模具 65。 木執仃杈製以形成第二模製部分1307976 21726pif ^ ^ The through hole 44 is filled with the first molded portion 34. The remaining molded portion 34a is also filled in the recess 43 of the intermediate plate 41. Referring to Figure 8, the intermediate plate 41 is removed from the substrate 31. Therefore, the molded portion filled in the groove 43 of the intermediate plate 41 is also removed together with the intermediate plate 41. Various methods can be employed to easily separate the first molding blade 4 in the through hole 44 from the remaining molded portion 34a. For example, the width or depth of the groove 43 can be reduced at the position where the groove 43 and the through hole 44 are connected to each other, so that the remaining molded portion 34a can be easily separated from the first molded portion 34. Referring to Fig. 9, the substrate 31 is subjected to a sawing process so that the substrate 31 can be separated into individual light emitting diodes. A blade or laser can be used to perform the sawing process. After the mineral cutting process, the cutting surface is cleaned. Therefore, as shown in the figure, it is known that the first molding portion 34 is positioned in the wafer type light emitting diode in the region surrounded by the cut surface of the substrate 31. According to the present invention, since the intermediate plate 41' provided in the upper surface of the intermediate plate 41 using the groove 43 is removed together with the intermediate plate 41, the molded portion 34a which has been filled with the groove 43 serving as the flow groove is removed. Therefore, unlike the prior art, the light-emitting diode in which the first molded portion 34 is positioned in the region surrounded by the cut surface of the substrate 31 is manufactured. 10 to 12 are views for explaining a method of manufacturing a light-emitting diode according to another embodiment of the present invention, wherein FIG. 11(a) is a plan view, and FIG. (b) is a cross-sectional view, and FIG. 1 and FIG. 12 are a sectional view and a plan view, respectively. Referring to Fig. 10, the intermediate plate 41 is used to form a first molded portion 34 for covering the light-emitting wafers 32 on the substrate 31 13 respectively, and then the intermediate plate 41 is removed as described above with reference to Figs. Thereafter, the material is coated to form an interval for covering between the first mold portions 34 formed thereon and covering the first molded portion %. An opaque heat-resistant resin (such as a mixture of added resin or an opaque molding material. It can be borrowed, such as 'stencil printing process, transfer molding process; method to mold impervious materials And can be removed by the process of referring to FIG. 11 , by means of a grinding process or the like; directly exposing the upper surface of the first molding portion 34 until 1 month, the material portion % covers the side of the first molding portion 34 = brother = the upper surface of the portion 34. And the exposed portion of the molded portion in the present embodiment 'uses the opaque portion 34 and partially removes the opaque molding material, so that the molded portion 35 is covered with the first to cover the first The side surface member of the molded portion 34 is formed into a second molded portion, which is coated and not in the embodiment of the 'opaque molding material r, which can partially remove the opaque surface. In this case« The upper wheel and the first molding portion 34 are placed in the plate so that the If process or the injection process forms a second St touch; the force is transferred to the method. 12, performing a mineral cutting process to separate the substrate on which the second molding portion 14 I3〇7? 76if 35 is formed The light-emitting diode is formed. Therefore, the light-emitting diode having the second molded portion 35 is formed, and the second molded portion 35 is made of an opaque molding material and symmetrically surrounds the side of the first molded portion 34. The second molding portion 35 can be used as a conventional reflector so that the luminous intensity in the desired range of the direction angle can be improved. Further, since the second molding portion 35 has the same height as the first molding portion 34, Therefore, the thickness of the light-emitting diode is not increased even in the case where the second molded portion 35 is employed. Meanwhile, in the conventional light-emitting diode using the reflector, it is easily damaged due to the shape of the reflector and the high temperature. The reflector material is difficult to form the transparent molded portion by means of a transfer molding process. However, since the second molded portion 35 is formed after the first molded portion 34 is formed in this embodiment, it is not subject to the second The first molded portion is formed by means of a transfer forming process in the case of the material and shape limitation of the molded portion. Further, although in this embodiment, the middle portion having the through hole 44 and the groove 43 is used The transfer molding process of 41 forms the first molding portion 34, but the first molding portion 34 can be formed by various methods such as a conventional screen printing process other than the transfer molding process and a conventional injection molding process. Meanwhile, the second molding portion 35 may have a predetermined inclined surface for reflecting light emitted from the light-emitting chip 32 within a desired range of the reflection direction angle. In the present embodiment, the inclined surface of the second molding portion 35 is along the first The side surface of the molding portion 34 is formed, and the side surface of the first molding portion 34 is determined by the shape of the through hole 44 of the intermediate plate 41. Therefore, the second mode can be controlled by appropriately adjusting the shape of the through hole 44. The slanted surface of the portion 35. The splicing surface described in the example is carried out in the middle plate 41. This is followed by a mold 65 having a lenticular recess in the ginseng 4 to Fig. 8. Wood to form a second molded part
p由轉注成形製程或射出成形製程來 部因此’如圖13中所示形成第二模製部分65，^ -4部分65覆蓋第—模製部分且第二模製部分％ 有透鏡部分。The p is formed by the transfer molding process or the injection molding process. Thus, the second molding portion 65 is formed as shown in Fig. 13, the portion - 65 portion covers the first molding portion and the second molding portion % has the lens portion.
,參看圖14，其上形成有第二模製部分65的基板受鋸 切製程，使得基板可被分離成個別發光二極體。因此，製 出了具有第二模製部分65之發光二極體，第二模製部分 65對稱地圍繞第一模製部分34之側表面且覆蓋第一模製 部分34之上表面以界定透鏡形狀。第二模製部分幻之透 鏡部分引起自發光晶片32發出之光聚焦於方向角之所要 範圍内，藉此改良發光強度。 第二模製部分65可由與第一模製部分34相同的材料 (例如，環氧或矽氧樹脂）形成。 圖15以及圖16分別為說明根據本發明之更進一步實 施例之發光二極體之製造方法的剖視圖以及透視圖。 參看圖15,中間板41用於形成覆蓋基板31上之發光 16 ι^/^76 2l726pjf 晶片32的第一模製部分^，且 所描述之移除中間板4】。 /上文翏看圖4至圖8 模製部分34的第二模製部分^形成用於各別地覆蓋第一 可經由使用具有用於接 第二模製部分75。 祕^或射成職程來形成 U中間板可具有與參 、^ ^ =及凹槽具有相同形狀的通之=/之通 孔大於中間板41之通？丨44。#、二 ^但中間板之通 34的通孔。 我、、巧弟一扠製部分 可藉由調節t間板之通孔的大小來 乃的厚度，且第-扠制μ v ^ 制牮二杈製部分 弟一杈製部分7 5可經形成以用均一戶庐F 盖第-模製部分34。 明尽度覆 麥看16，其上形成有第二難部分75❺基板受鑛 刀衣程，使得基板可被分離成個別發光二極體。因此，制 以出了具有第二模製部分75之發光二極體，第二模製 75對稱地圍繞第一模製部分34之侧表面且均一地覆 二模製部分34之上表面。第二模製部分75可經形成=在 第一模製部分34之側表面以及上表面上具有均一厚产。 在此實施例中，第一模製部分34或第二模製;=°75 可含有鱗光體。特定言之，在㈣體分散於第二模製;分 %中之狀況下，磷光體引起自發光晶片幻發出之^被^ 一地波長轉換。此外，第一模製部分34以及第二模製部分 17 1307驟 含丄有光體。舉例而言，第—模製部分％可含 二模製部分75可含麵魏體，藉此提供 白色，光二極體。在此種狀況下，已受第-模製部 ，紅％光體之波長轉換的光可在並不被第二模製部分之綠 一光體吸收的情況下向外發射。因此，有可能防止光之損 失。相反，第-模製部》34彳含有綠碟光體且第二模製部 分7 5可含有紅磷光體。在此種狀況下，已受綠磷光體之波 長轉換的光再次受紅軌體之波長轉換哺換為紅色，使 得可增加紅光之光強度。 【圖式簡單說明】 、圖1至圖3為說明晶片類型發光二極體之習知製造方 法的視圖’其中圖1 (a)以及圖2(a)為平面圖，圖1 (b) =圖2 (b)為剖視圖且圖3為展示習知晶片類雜光二 極體之透視圖。 圖4至圖9為_根據本發明之實施例之發光二極體 法的視圖，其中圖4(a)、圖5(a)、圖7(a) 、 （a)為平面圖同時圖4(b)、圖5(b)、圖7(b) 以及圖8 (b)為剖視圖。 -朽：1〇*至圖12為說明根據本發明之另-實施例之發光 /造方法的視圖，其中圖11 (a)為平面圖且圖 11 (b)為剖視圖。 ^ 蘇# 及圖14為說明根據本發明之進—步實施例之 發先二極體之製造方法的剖視圖以及透視圖。 圖15以及目16為說明根據本發明之更進-步實施例 18 I3〇7976if 之發光二極體之製造方法的剖視圖以及透視圖。 【主要元件符號說明】 1Γ、31 :印刷電路板 12、 32 :發光晶片 13、 33 :導線 14 :模製部分 34 :第一模製部分 35、65、75 :第二模製部分 41 :中間板 43 :凹槽 44 :通孔 5：1、53 :模具Referring to Fig. 14, the substrate on which the second molding portion 65 is formed is subjected to a sawing process so that the substrate can be separated into individual light-emitting diodes. Thus, the light-emitting diode having the second molded portion 65 is formed, the second molded portion 65 symmetrically surrounding the side surface of the first molded portion 34 and covering the upper surface of the first molded portion 34 to define the lens shape. The second molded portion of the phantom lens portion causes the light emitted from the light-emitting chip 32 to be focused within a desired range of the directional angle, thereby improving the illuminating intensity. The second molded portion 65 may be formed of the same material (e.g., epoxy or epoxy resin) as the first molded portion 34. 15 and 16 are a cross-sectional view and a perspective view, respectively, illustrating a method of manufacturing a light-emitting diode according to a still further embodiment of the present invention. Referring to Fig. 15, the intermediate plate 41 is used to form a first molded portion of the wafer 32 covering the light-emitting substrate 31 on the substrate 31, and the intermediate plate 4 is removed as described. The second molding portion of the molding portion 34 is formed to cover the first portion separately from the above, and has a second molding portion 75 for use. The secret or the shooting process to form the U intermediate plate can have the same shape as the reference, ^^ = and the groove. The through hole is larger than the intermediate plate 41.丨44. #,二^But the through hole of the intermediate plate 34. I, Qiaodi, the fork part can be adjusted by the size of the through hole of the t-plate, and the first fork system can be formed by the second fork system The first molded portion 34 is covered with a uniform household F. The glazing is 16 and the second difficult portion of the 75 ❺ substrate is formed by the knife coating process so that the substrate can be separated into individual light-emitting diodes. Thus, the light-emitting diode having the second molded portion 75 is formed, and the second mold 75 symmetrically surrounds the side surface of the first molded portion 34 and uniformly covers the upper surface of the second molded portion 34. The second molded portion 75 can be formed to have a uniform thickness on the side surface and the upper surface of the first molded portion 34. In this embodiment, the first molded portion 34 or the second molding; = ° 75 may contain scales. Specifically, in the case where the (four) body is dispersed in the second molding; in the case of %, the phosphor causes the self-luminous wafer to emit a wavelength conversion. Further, the first molding portion 34 and the second molding portion 17 1307 are provided with a ruthenium-emitting body. For example, the first molded portion % may include the two molded portion 75 may include a facet body, thereby providing a white, photodiode. Under such conditions, the light which has been subjected to the wavelength conversion of the first molded portion and the red illuminant can be emitted outward without being absorbed by the green light body of the second molded portion. Therefore, it is possible to prevent loss of light. On the contrary, the first molded portion "34" contains a green light body and the second molded portion 75 may contain a red phosphor. Under such conditions, the light that has been converted by the wavelength of the green phosphor is again converted to red by the wavelength conversion of the red rail, so that the intensity of the red light can be increased. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 to FIG. 3 are views showing a conventional manufacturing method of a wafer type light-emitting diode. FIG. 1(a) and FIG. 2(a) are plan views, and FIG. 1(b)=FIG. 2 (b) is a cross-sectional view and FIG. 3 is a perspective view showing a conventional wafer-like stray diode. 4 to 9 are views of a light emitting diode method according to an embodiment of the present invention, wherein FIGS. 4(a), 5(a), 7(a), and (a) are plan views and FIG. 4 ( b), Fig. 5(b), Fig. 7(b), and Fig. 8(b) are cross-sectional views. - 朽: to Fig. 12 is a view for explaining a light-emitting/construction method according to another embodiment of the present invention, wherein Fig. 11(a) is a plan view and Fig. 11(b) is a cross-sectional view. ^ 苏# and Figure 14 are cross-sectional and perspective views illustrating a method of fabricating a first diode according to a further embodiment of the present invention. 15 and 16 are cross-sectional views and perspective views illustrating a method of manufacturing a light-emitting diode according to a further embodiment 18 I3〇7976if of the present invention. [Main component symbol description] 1Γ, 31: printed circuit board 12, 32: light-emitting chip 13, 33: wire 14: molded portion 34: first molded portion 35, 65, 75: second molded portion 41: middle Plate 43: groove 44: through hole 5: 1, 53: mold
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