TWI659550B - Chip-scale packaging led with electrode polarity recognition mark and method of manufacturing the same - Google Patents

Abstract

The invention provides a light-emitting device with a wafer-level package and a manufacturing method thereof. The light-emitting device includes an LED chip and a packaging structure. The LED chip includes an upper surface, a lower surface, a first elevation surface, a second elevation surface, and a pair of electrode groups. The upper surface defines a first horizontal direction and a second horizontal direction staggered vertically, and the first elevation surface and the second elevation surface. The electrode groups are separated along the first horizontal direction, and the pair of electrode groups are disposed on the lower surface. The packaging structure covers the upper surface, the first elevation surface, and the second elevation surface of the LED chip, and includes a first side surface and a second side surface separated along the first horizontal direction. A first region is defined between the first side and the first elevation, and a second region is defined between the second side and the second elevation. Thus, the electrode orientation of the LED chip can be identified by identifying the area sizes of the first and second regions.

Description

Wafer-level package light-emitting device with electrode identification and manufacturing method thereof

The present invention relates to a light-emitting device and a method for manufacturing the same, and more particularly, to a wafer-level package light-emitting device with electrode identification and a method for manufacturing the same.

LED (Light Emitting Diode) chips are commonly used to provide light sources for illumination, display, or indication, and LED chips are usually placed in a package structure (which can include fluorescent materials) to become a light emitting device.

With the development of LED technology, chip-scale package (CSP) light-emitting devices have attracted much attention in recent years due to their obvious advantages. Compared with traditional bracket-type LEDs and ceramic substrate-type LEDs, CSP light-emitting devices have the following advantages: (1) no need for gold wires and additional brackets or submounts such as ceramic substrates, so material costs can be significantly saved; ( 2) Because the auxiliary carrier such as the bracket or the ceramic substrate is omitted, the thermal resistance between the LED chip and the heat sink can be further reduced, so it will have a lower operating temperature or increase the operating power under the same operating conditions; (3) ) Lower operating temperature can make LED have higher chip quantum conversion efficiency; (4) The greatly reduced package size makes it have greater design flexibility when designing modules or lamps; (5) Has a small light emitting area, Therefore, the etendue can be reduced, so that secondary optics can be more easily designed, or high intensity can be obtained by this.

However, since the CSP light-emitting device does not require additional substrates or sub-carriers, the CSP light-emitting device lacks the positive and negative electrode identification. That is, if viewed from directly above the CSP light-emitting device, its appearance It has a symmetrical shape, which makes it difficult to judge the directivity of the positive and negative electrodes of the LED chip in the CSP light-emitting device. Although the directionality of the positive and negative electrodes can be judged from below the CSP light-emitting device, the CSP light-emitting device can be flipped, arranged, and soldered to the circuit board on the application side, but this is an inconvenience and the yield of the welding process is not high. . In addition, once the CSP light-emitting device is arranged on the circuit board, it is difficult to judge the directivity of the positive and negative electrodes, and it is impossible to check whether the CSP light-emitting device is placed on the circuit board in the correct electrode direction.

Even if the industry attempts to form microstructures such as grooves and penetrating grooves on the fluorescent layer of a CSP light-emitting device, and then add a material different from the color of the phosphor layer in the grooves or penetrating grooves to identify the direction of the electrodes. However, the size of the fluorescent layer itself is already small, and it is difficult to form smaller grooves or through-grooves thereon, for example, a tool with better accuracy can be used to make the grooves or through-grooves extremely small. size. It is more difficult to add other materials into the groove or the through groove. For example, because the size of the groove or the through groove is extremely small, it is difficult for the uncured material to flow into the groove or the through groove, causing the material to not fill the groove. The slot or through slot, or causes the material to be outside the slot or through slot.

Therefore, in addition to increasing the manufacturing process of CSP light-emitting devices, the yield of "grooves or through-grooves" and "addition of other materials" should be difficult to meet expectations, which may eventually lead to the production of CSP light-emitting devices. The yield and yield have dropped significantly.

In view of this, how to improve the above-mentioned shortcomings is a problem to be solved in this industry.

An object of the present invention is to provide a wafer-level packaged light-emitting device with electrode identification (hereinafter referred to as a light-emitting device) and a manufacturing method thereof. The light-emitting device has a feature for identifying the direction of an electrode, and preferably can also maintain the light-emitting device. Manufacturing yield and / or yield.

To achieve the above object, the wafer-level packaged light-emitting device provided by the present invention includes: The LED chip includes an upper surface, a lower surface opposite to the upper surface, a first elevation, a second elevation, a first electrode, and a second electrode. The first elevation and the second elevation are all formed on And connected between the upper surface and the lower surface, the first electrode and the second electrode are disposed on the lower surface, wherein the upper surface defines a first horizontal direction and a second horizontal direction staggered vertically, the first vertical surface and The second elevation is separated along the first horizontal direction; and a packaging structure covering the upper surface, the first elevation, and the second elevation of the LED chip, but exposing the lower surface, the first electrode, and the second electrode, wherein, The packaging structure includes a first side surface and a second side surface that are separated along the first horizontal direction; wherein, along the first horizontal direction, a first area is defined between the first side surface and the first vertical surface, and A second area is defined between the second side and the second elevation, and the area of the first area is not equal to the area of the second area.

Preferably, along the first horizontal direction, a first distance between the first side surface and the first elevation surface may be smaller than a second distance between the second side surface and the second elevation surface, so that the The area is smaller than the area of the second area.

Preferably, along the second horizontal direction, a width of one of the first side surfaces may be larger than a width of one of the second side surface and the second elevation surface, so that an area of the first region is larger than an area of the second region.

Preferably, the packaging structure further includes a chamfered surface, a third side surface and a fourth side surface separated along the second horizontal direction, and the chamfered surface connects the third side surface and the second side surface.

In order to achieve the above object, another wafer-level package light-emitting device provided by the present invention includes: an LED chip including an upper surface, a lower surface opposite to the upper surface, a first elevation, a second elevation, and a A first electrode and a second electrode, the first vertical surface and the second vertical surface are formed between the upper surface and the lower surface, and the first electrode and the second electrode are disposed on the lower surface, wherein, The upper surface defines a first horizontal direction and a second horizontal direction that are vertically intersected, the first elevation and the second elevation are separated along the first horizontal direction; and a packaging structure covering the The upper surface, the first vertical surface, and the second vertical surface of the LED chip, but the lower surface, the first electrode, and the second electrode are exposed, wherein the packaging structure includes a photoluminescent layer and a reflective structure , The photoluminescent layer is disposed on the LED chip On the upper surface, and the photoluminescent layer includes a side surface of the first photoluminescent layer and a side surface of the second photoluminescent layer that are spaced apart along the first horizontal direction; and the reflective structure is along the first A horizontal direction covers the LED chip and the photoluminescent layer, and the reflective structure includes a first reflective structure side and a second reflective structure side spaced apart along the first horizontal direction; wherein, along the first In a horizontal direction, a first area is defined between the side of the first reflective structure and the side of the first photoluminescent layer, and a second area is defined between the side of the second reflective structure and the side of the second photoluminescent layer. The first region is not equal to the second region.

Preferably, along the first horizontal direction, a third distance between the side of the first reflective structure and the side of the first photoluminescent layer is smaller than the side of the second reflective structure and the second photoluminescent layer. A fourth distance between the sides.

In order to achieve the above-mentioned object, the method for manufacturing a light-emitting device with a wafer-level package provided by the present invention includes: forming and providing a plurality of LED chips, wherein each of the LED chips includes an upper surface and a lower surface relative to one of the upper surfaces; Surface, a first facade, a second facade, a first electrode and a second electrode, the first facade and the second facade are all formed between the upper surface and the lower surface, the first electrode and The second electrode is disposed on the lower surface, wherein the upper surface defines a first horizontal direction and a second horizontal direction which are vertically staggered, and the first elevation and the second elevation are separated along the first horizontal direction; and Forming a plurality of packaging structures on the LED chips to cover each of the upper surface, the first elevation, and the second elevation of the LED wafer, but exposing the lower surface and the first electrode and the second electrode, wherein the packaging structure It includes a first side and a second side that are separated along the first horizontal direction. A first area is defined between the first side and the first elevation, and a second area is defined between the second side and the second elevation. Second zone Is not equal to the area of the second area based area.

Accordingly, the light-emitting device and the manufacturing method thereof provided by the present invention can provide at least the following beneficial technical effects:

1. Viewed from above the light-emitting device, the light-emitting device presents a first area and a second area with different sizes. There is an asymmetry in the area, so that the direction of the wafer electrode corresponding to the asymmetry can be identified through human eyes or machine vision.

2. The asymmetry of the appearance of the light-emitting device can be realized in the process of singulation (such as cutting or molding), and the singulation process is a necessary process of the light-emitting device, without additional process steps and without Achieved by high-precision tools. Therefore, it does not affect the existing manufacturing yield of the light emitting device.

3. The asymmetry exhibited by the light emitting device is not achieved by adding or injecting tiny materials, so it will not affect the existing manufacturing yield of the light emitting device.

4. When the packaging structure of the light emitting device includes a photoluminescent layer and a reflective structure, and the reflective structure covers the LED chip and the photoluminescent layer along the first horizontal direction, the first region and the second region may be defined on the reflective structure. As a result, the area difference between the first region and the second region will be represented by the thickness of the reflective structure, so that it will not cause the shape of the photoluminescent layer to be asymmetric and affect the optical characteristics of the light emitting device. In summary, the appearance of the light emitting device may be asymmetric, and the shape of the photoluminescent layer still has a symmetrical structure. Therefore, after the light emitted by the LED chip passes through the photoluminescent layer, the light type of the light is not asymmetric. Affected by the reflective structure of the appearance.

In order to make the above-mentioned objects, technical features, and advantages more comprehensible, the following describes in detail the preferred embodiments in combination with the accompanying drawings.

A1, A2‧‧‧‧Light-emitting device

10‧‧‧LED Chip

11‧‧‧ top surface

12‧‧‧ lower surface

13‧‧‧ first facade

14‧‧‧ second facade

15‧‧‧first electrode

16‧‧‧Second electrode

20‧‧‧ Package Structure

21‧‧‧first side, first reflective structure side

22‧‧‧ second side, second reflective structure side

251‧‧‧first side, first photoluminescent layer side

252‧‧‧second side, second photoluminescent layer side

23‧‧‧ third side

24‧‧‧ Fourth side

25‧‧‧Photoluminescent layer

26‧‧‧Reflective structure

40‧‧‧ Release Material

41‧‧‧Punching tool

411‧‧‧Blade

50‧‧‧mould

51‧‧‧mould cavity

52‧‧‧ chamfered surface

B1‧‧‧First Zone

B2‧‧‧Second Zone

C1‧‧‧ chamfered surface

D1‧‧‧First horizontal direction

D2‧‧‧ second horizontal direction

L1‧‧‧First distance

L2‧‧‧Second Distance

L3‧‧‧ Third distance

L4‧‧‧ Fourth distance

W1, W2‧‧‧Width

Figure 1 is a schematic cross-sectional view of a light-emitting device according to a preferred embodiment of the present invention; Figures 2A and 2B are schematic top and bottom views of the light-emitting device of Figure 1, respectively; Figures 3A to 3C are each the first Top and bottom schematic diagrams of other aspects of the light-emitting device in the figure; Figures 4A and 4B are schematic top and bottom schematic diagrams of a light-emitting device according to another preferred embodiment of the present invention, respectively; Fig. 5 is a schematic plan view of another aspect of the light emitting device of Fig. 4A; Figs. 6A to 6E are schematic diagrams of steps of a method for manufacturing a light emitting device according to another preferred embodiment of the present invention; Fig. 7A and FIG. 7B is a schematic diagram of a method of manufacturing a light emitting device according to yet another preferred embodiment of the present invention; and FIGS. 8A and 8B are schematic diagrams of a method of manufacturing a light emitting device according to a further preferred embodiment of the present invention.

Please refer to FIG. 1 to FIG. 2B, which are schematic diagrams of a light-emitting device A1 in a wafer-level package according to a preferred embodiment of the present invention. The light-emitting device A1 may include an LED chip 10 and a packaging structure 20. The technical contents are explained in order as follows.

The LED chip 10 may be a flip-chip LED chip, which may emit first light such as red light, green light, blue light, infrared light, or ultraviolet light. The appearance of the LED chip 10 includes an upper surface 11 which is opposite to the upper surface 11. The lower surface 12, a first vertical surface 13, a second vertical surface 14, a first electrode 15 and a second electrode 16. The upper surface 11 and the lower surface 12 may be substantially parallel and oppositely disposed. The upper surface 11 and the lower surface 12 may be rectangular, and two edges of the upper surface 11 (and the lower surface 12) correspond to the first level. The direction D1 and the other two side lines correspond to the second horizontal direction D2. In other words, along the upper surface 11 of the LED chip 10, a first horizontal direction D1 and a second horizontal direction D2 that are perpendicularly staggered with each other are defined, and each of the first horizontal direction D1 and the second horizontal direction D2 is connected to the The optical axis direction (direction perpendicular to the upper surface 11, not shown) is perpendicular to each other.

The first facade 13 and the second facade 14 are formed between the upper surface 11 and the lower surface 12 and connect the upper surface 11 and the lower surface 12; the first facade 13 and the second facade 14 are also along the first level The directions D1 are separated from each other, and therefore are located on the opposite side of the LED chip 10. The LED chip 10 includes two other facades (not labeled), which are also connected The upper surface 11 and the lower surface 12 are connected to each other along the second horizontal direction D2.

As shown in FIG. 2B, the first electrode 15 and the second electrode 16 are disposed on the lower surface 12 and may form a lower electrode surface together with the lower surface 12; the first electrode 15 and the second electrode 16 may be along the first horizontal direction D1 is spaced apart from each other, and the first electrode 15 and the second electrode 16 may be spaced apart from each other along the second horizontal direction D2. One of the first electrode 15 and the second electrode 16 may serve as a positive electrode, and the other may serve as a negative electrode.

The packaging structure 20 can change the wavelength of the first light emitted by the LED chip 10 or limit the light shape and light emission range of the light emitting device. The packaging structure 20 covers the upper surface 11, the first vertical surface 13 and the second vertical surface 14 of the LED chip 10, but exposes the lower surface 12, the first electrode 15 and the second electrode 16; in other words, the packaging structure 20 does not cover the LED The electrode surface under the chip 10 does not prevent the first electrode 15 and the second electrode 16 from being soldered to the circuit board (not shown). In addition, in this aspect, the packaging structure 20 also covers the two facades (not labeled) of the LED chip 10 separated along the second horizontal direction D2.

As shown in FIG. 2B, the package structure 20 includes a first side surface 21 and a second side surface 22 spaced apart along the first horizontal direction D1, and a first side surface spaced apart along the second horizontal direction D2. Three sides 23 and a fourth side 24. Along the first horizontal direction D1, a first area B1 is defined between the first side surface 21 of the packaging structure 20 and the first elevation surface 13 of the LED chip 10, and a second area 22 is defined between the second side surface 22 and the second elevation surface 14. The area of the second region B2 and the first region B1 is not equal to the area of the second region B2. The first region B1 and the second region B2 of different sizes can generate an identification feature of the electrode direction. That is, viewed from a top view or a bottom view, the first area B1 may be a two-dimensional area formed by projecting the packaging structure 20 between the first side surface 21 and the first facade 13 onto a plane, and the second area B2 may be The packaging structure 20 between the second side surface 22 and the second facade 14 is projected onto a two-dimensional area formed by the same plane. The area of the first area B1 and the second area B2 are not equal. The area of the second area B2 is significantly larger than the area of the first area B1 (for example, 1.2 times, 1.3 times, 1.5 times, or even 2 times), so the naked eye And machine vision can easily determine which is the first region B1 or the second region B2, and then determine the electrode arrangement direction of the first electrode 15 and the second electrode 16.

The unequal areas of the first region B1 and the second region B2 can be achieved by the difference in size of the packaging structure 20. Specifically, the packaging structure 20 includes a first feature size and a second feature size; along the first horizontal direction D1, the first feature size is a distance L1 between the first side surface 21 and the first facade 13 (Hereinafter referred to as the first distance), and the second characteristic dimension is a distance L2 (hereinafter referred to as the second distance) between the second side surface 22 and the second elevation surface 14, and the first distance L1 is smaller than the second distance L2, As a result, the area of the first area B1 is smaller than the area of the second area B2 (the widths of the two areas B1 and B2 may be the same). Preferably, the second distance L2 may be at least 1.2 times, 1.3 times, 1.5 times, or 2 times the first distance L1, or other multiples that allow the user's naked eye or machine vision to distinguish the distance difference.

The package structure 20 may include at least one of a photoluminescent layer, a reflective structure, a light guiding structure, a light transmitting layer, a moisture barrier layer, a moisture absorption layer, and a buffer layer on the component composition. One, in other words, the direction identification feature of the packaging structure 20 should not be limited to the component composition of the packaging structure 20, and can be applied to, for example, application numbers 106130827, 106103239, 105104034, 105102658, 105100783, 104144441 applied by the applicant of this case The packaging structure of the light-emitting device or the components corresponding to the packaging structure disclosed in the Taiwan patent application etc .; these packaging structures or components that cover the LED chip can include different sizes of this embodiment (or other embodiments described later). The two regions make the appearance asymmetry; the technical content of these applications can be incorporated into this application as various implementation forms of the packaging structure 20.

In this embodiment, the packaging structure 20 preferably includes a photoluminescent layer 25 and a reflective structure 26. The photoluminescent layer 25 may include a fluorescent material or a quantum dot material, which can partially change the wavelength of the first light. A second light with a longer wavelength is formed and mixed in a light-transmitting adhesive material, or a method for forming a fluorescent layer disclosed in US Pat. No. 9,797,041 of the applicant can be referred to. Preferably, the area of the photoluminescent layer 25 is greater than or substantially equal to the area of the upper surface of the LED wafer 10 and is symmetrically disposed on the surface 11 of the LED wafer 10; if the area of the photoluminescent layer 25 is larger than the area of the LED wafer 10 The surface area, along the first horizontal direction D1, the photoluminescent layer 25 includes two spaced apart first photoluminescent layer sides 251 (hereinafter referred to as the first side) 251) and the second photoluminescent layer side surface 252 (hereinafter referred to as the second side surface 252), the first side surface 251 and the second side surface 252 may be separated from the first facade 13 and the second facade 14 of the LED chip 10, respectively; The area of the photoluminescent layer 25 is substantially equal to the area of the upper surface of the LED chip 10. The first side surface 251 and the second side surface 252 may be flush with the first vertical surface 13 and the second vertical surface 14 (not shown).

The reflective structure 26 may include light-scattering particles mixed in a light-transmitting adhesive material, making it difficult for light to pass through the reflective structure 26. The reflective structure 26 covers the side surfaces 251 and 252 of the LED chip 10 and the photoluminescent layer 25 along the first horizontal direction D1 (as shown in FIG. 2A), but does not cover the LED chip 10 and light along the second horizontal direction D2致 luminescent layer 25. The first reflective structure side surface 21 (hereinafter referred to as the first side surface 21) and the second reflective structure side surface 22 (hereinafter referred to as the second side surface 22) of the reflective structure 26 separated along the first horizontal direction D1 are respectively the entire package structure 20 On the first side 21 and the second side 22. Such an asymmetric reflective structure 26 can effectively limit and reduce the light emission angle along the first horizontal direction D1 without affecting the light emission angle of the light emitting device along D2.

By identifying the first area B1 (first distance L1) between the first side surface 21 and the first facade 13 of the reflective structure 26 is not equal to the second area B2 (the second area B2 between the second side 22 and the second facade 14) The second distance L2) can identify the preset electrode arrangement direction. On the other hand, along the first horizontal direction D1, the third distance L3 between the first side surface 21 of the reflective structure 26 and the first side surface 251 of the photoluminescent layer 25 is not equal to the second side surface 22 of the reflective structure 26 and The fourth distance L4 between the second sides 252 of the photoluminescent layer 25. For example, if the first distance L1 is smaller than the second distance L2, the third distance L3 is smaller than the fourth distance L4, and the difference between the two distances L3 and L4 ( And the corresponding regional differences) can also be used to identify the arrangement direction of the electrodes; in other words, the two distances L3 and L4 also indicate that the reflective structure 26 includes two parts with different thicknesses. In addition, since the reflective structure 26 (for example, white) and the photoluminescent layer 25 (for example, yellow) exhibit different colors, it will be more beneficial to use visual or machine vision to determine the difference between the two distances L3 and L4 and identify the preset electrode Arrange direction.

On the other hand, the shape of the photoluminescent layer 25 is symmetrically formed on the LED wafer 10 The sides and sides, therefore, the reflective structures 26 having different thicknesses (ie, distances L3 and L4) will not affect the light color, light shape, or light intensity of the light-emitting device.

In other aspects, the reflective structure 26 may cover the LED chip 10 and the photoluminescent layer 25 along the second horizontal direction D2 (as shown in FIG. 3A and FIG. 3C), and the LED chip 10 may be a long wafer. The upper surface 11 and the lower surface 12 may be rectangular (as shown in FIG. 3B).

Please refer to FIGS. 4A and 4B, which are schematic top and bottom views of a light emitting device A2 according to another preferred embodiment of the present invention. The light emitting device A2 also has a first area B1 and a second area B2 with different areas for identification of the electrode direction, and the area difference between the first area B1 and the second area B2 is determined by the two widths W1 and W1 of the packaging structure 20. W2 difference is reached.

Specifically, along the second horizontal direction D2, one width W1 of the first side surface (or the side of the first reflective structure) 21 is larger than one width W2 of the second side surface (or the side of the second reflective structure) 22 such that the first The region B1 is larger than the second region B2. That is, the packaging structure 20 may include a chamfered surface C1 that connects the third side surface 23 and the second side surface 22 (the two are perpendicular to each other and are not connected), but the first side surface 21 is not connected to the other The chamfered surface makes the width W2 of the second side surface 22 relatively small. In addition to the chamfered surface C1, the packaging structure 20 may also include one or more chamfered features (including rounded corners), and the packaging structure 20 may also include a groove (not shown) formed in the second side surface 22 so that The first region B1 (width W1) and the second region B2 (width W2) are different. The packaging structure 20 also includes a fourth side surface 24 which is separated from the third side surface 23 along the second horizontal direction D2.

In other aspects, the reflective structure 26 may cover the LED wafer 10 and the photoluminescent layer 25 (not shown) only along the second horizontal direction D2, and the LED wafer 10 may be a long wafer (as shown in FIG. 5).示).

Although in the above-mentioned embodiments, the directions having the identification features are all located on the first horizontal direction D1 of the LED chip 10 (that is, on the side of the first electrode 15 and / or the second electrode 16), it is not limited thereto. The identification feature may also be located on one side of the second horizontal direction D2 of the LED chip 10.

Next, a method for manufacturing a light-emitting device according to other preferred embodiments of the present invention will be described. This manufacturing method can produce the same or similar wafer-level packaged light-emitting devices A1 and A2 as the above-mentioned embodiments. The technical contents of the light-emitting device in the sub-package can be mutually referenced and applied, and the same parts will be omitted or simplified.

Please refer to FIGS. 6A to 6E. The manufacturing method includes at least two parts: providing a plurality of LED chips 10 (as shown in FIG. 6A); and forming a plurality of packaging structures 20 on the LED chips 10 (as shown in FIG. 6A). 6B to 6E), and the package structure 20 has two regions with different sizes for identifying the direction of the electrodes.

In detail, as shown in FIG. 6A, a plurality of interconnected photoluminescent layers 25 are first disposed on a release material 40, and a plurality of LED wafers 10 are placed on the photoluminescent layer 25 to make the LED wafers. The upper surface 11 of 10 is bonded to the photoluminescent layer 25 to form an LED chip array. As shown in FIG. 6B, a part of each of the photoluminescent layers 25 is removed to separate the photoluminescent layers 25. As shown in FIG. 6C, a reflection is formed on the release material 40 Structure 26, and the reflective structure 26 fills the space between the separated photoluminescent layers 25 and the spaced LED wafers 10; the formed reflective structure 26 will not cover the lower surface 12 of the LED wafers 10 to expose The first electrode 15 and the second electrode 16; at this time, the reflective structure 26 and the photoluminescent layer 25 constitute a plurality of connected packaging structures 20.

As shown in FIG. 6E, the packaging structures 20 connected to each other are then cut along the first horizontal direction D1 and the second horizontal direction D2, so that each of the packaging structures 20 is along the first side of the first horizontal direction D1. A first distance L1 between 21 and the first facade 13 is smaller than a second distance L2 between the second side 22 and the second facade 14 (or the third distance L3 corresponding to the first distance L1 is smaller than the corresponding In other words, along the second horizontal direction D2, the cut position is not in the middle of two connected packaging structures 20, but is biased toward one of the packaging structures 20. In this way, the light emitting device A1 in various aspects as shown in FIGS. 1 to 3C can be formed. As shown in FIG. 6D, the release material 40 is removed before or after cutting the package structure.

In another preferred embodiment, the step of forming the packaging structure 20 in the manufacturing method may include: as shown in FIG. 7A, cutting the packaging structures 20 so that each of the packaging structures 20 is along the first The horizontal side D1 forms a first side surface 21 and a second side surface 22 that are separated, and a third side surface 23 and a fourth side surface 24 that are separated along the second horizontal direction D2. In this way, the packaging structures 20 may be separated from each other. Then, as shown in FIG. 7B, a chamfered surface C1 (as shown in FIG. 4A) can be formed on each of the packaging structures 20 by a cutting tool 41. In this way, a plurality of light emitting devices A2 can be formed as shown in FIGS. 4A to 5.

In addition, the cutting blade 41 includes a plurality of cutting edges 411, and the cutting edges 411 are disposed obliquely in the first horizontal direction D1 and the second horizontal direction D2. During the cutting, the cutting edge 411 can remove one corner of the packaging structure 20. A chamfered surface C1 is formed. In other aspects, the punching cutter 41 may include a circular cutting edge (not shown), and the connected packaging structures 20 may be separated by a single punching (as shown in FIG. 7A), and simultaneously at each time A chamfered surface C1 is formed on a package structure 20.

In another embodiment, the step of forming the packaging structure 20 may further include: as shown in FIG. 8A, placing the plurality of LED chips 10 in a plurality of mold cavities 51 of a mold 50, wherein the mold cavities 51 Each of them includes a chamfered surface 52; in addition, a photoluminescent layer 25 (as shown in FIG. 4A) has been provided on the LED chip 10, and both are placed in the mold cavity 51. Next, as shown in FIG. 8B, packaging structures 20 including the reflection structure 26 are formed in the mold cavity 51, respectively, so that the reflection structure 26 forms a shape corresponding to the mold cavity 51. Since the mold cavity 51 has a chamfered surface 52 at a corner, The formed reflective structure 26 also has a chamfered surface C1. In this way, a plurality of light emitting devices A2 can be formed as shown in FIGS. 4A to 5.

The mold cavity 51 may not include the chamfered surface 52, and the plurality of LED chips 10 may be placed along the first horizontal direction D1, a first distance L1 between the first side surface 21 and the first vertical surface 13 by being offset. Is smaller than a second distance L2 between the second side surface 22 and the second vertical surface 14 (or the third distance L3 corresponding to the first distance L1 is smaller than the fourth distance L4 corresponding to the second distance L2) to form the first distance The light emitting device A1 in various aspects shown in FIGS. 3C.

In summary, the light-emitting device of the wafer-level package of the present invention can have the identification feature of the electrode arrangement direction, and this identification feature can be formed together during the formation of the package structure or the singulation process, so it will not affect the light-emitting device. It has the existing manufacturing yield and yield, and effectively solves the problem that it is difficult to identify the component orientation of the wafer-level packaged light-emitting device by simple means.

The above embodiments are only used to exemplify the implementation aspects of the present invention, and to explain the technical features of the present invention, and are not intended to limit the protection scope of the present invention. Any change or equivalence arrangement that can be easily accomplished by those skilled in the art is within the scope claimed by the invention, and the scope of protection of the rights of the present invention shall be subject to the scope of patent application.

Claims (12)

A light-emitting device with a wafer-level package includes an LED chip including an upper surface, a lower surface opposite to the upper surface, a first vertical surface, a second vertical surface, a first electrode, and a second electrode. The first elevation and the second elevation are both formed between the upper surface and the lower surface, and the first electrode and the second electrode are disposed on the lower surface, wherein the upper surface defines a vertical stagger. A first horizontal direction and a second horizontal direction, the first elevation and the second elevation are separated along the first horizontal direction; and a packaging structure covering the upper surface of the LED chip, the first A vertical surface and the second vertical surface, but exposing the lower surface, the first electrode, and the second electrode, wherein the packaging structure includes a first side surface and a first side spaced apart along the first horizontal direction; Two sides; wherein, along the first horizontal direction, a first area is defined between the first side and the first elevation, and a second area is defined between the second side and the second elevation, The first region is not equal to the second region; wherein, along the In the first horizontal direction, a first distance between the first side surface and the first vertical surface is smaller than a second distance between the second side surface and the second vertical surface, so that the first area is smaller than The second area. The light-emitting device according to claim 1, wherein the second distance is at least 1.2 times the first distance. A light-emitting device with a wafer-level package includes an LED chip including an upper surface, a lower surface opposite to the upper surface, a first vertical surface, a second vertical surface, a first electrode, and a second electrode. The first elevation and the second elevation are both formed between the upper surface and the lower surface, and the first electrode and the second electrode are disposed on the lower surface, wherein the upper surface defines a vertical stagger. A first horizontal direction and a second horizontal direction, the first elevation and the second elevation are separated along the first horizontal direction; and a packaging structure covering the upper surface of the LED chip, the first A vertical surface and the second vertical surface, but exposing the lower surface, the first electrode, and the second electrode, wherein the packaging structure includes a first side surface and a first side spaced apart along the first horizontal direction; Two sides; wherein, along the first horizontal direction, a first area is defined between the first side and the first elevation, and a second area is defined between the second side and the second elevation, The first region is not equal to the second region; wherein, along the The second horizontal direction, one of the first side surface is greater than the second line width, and one side surface of the second facade width, so that the first region is larger than the second region. The light-emitting device according to claim 3, wherein the packaging structure further includes a chamfered surface and a third side surface and a fourth side surface separated along the second horizontal direction, and the chamfered surface is connected to the first side surface. Three sides and the second side. The light-emitting device according to any one of claims 1 to 4, wherein the packaging structure includes a photoluminescent layer, a reflective structure, a light-guiding structure, a light-transmitting layer, a moisture-barrier layer, and a moisture-absorbing layer Layer and at least one of a buffer layer. A light-emitting device with a wafer-level package includes an LED chip including an upper surface, a lower surface opposite to the upper surface, a first vertical surface, a second vertical surface, a first electrode, and a second electrode. The first elevation and the second elevation are both formed between the upper surface and the lower surface, and the first electrode and the second electrode are disposed on the lower surface, wherein the upper surface defines a vertical stagger. A first horizontal direction and a second horizontal direction, the first elevation and the second elevation are separated along the first horizontal direction; and a packaging structure covering the upper surface of the LED chip, the first A facade and the second facade, but the lower surface, the first electrode, and the second electrode are exposed, wherein the packaging structure includes a photoluminescent layer and a reflective structure, and the photoluminescent layer is disposed on the On the upper surface of the LED chip, the photoluminescent layer includes a side surface of the first photoluminescent layer and a side surface of the second photoluminescent layer that are spaced apart along the first horizontal direction, and the reflective structure is along the The first horizontal direction covers the LED chip and the photoinduced An optical layer, and the reflective structure includes a first reflective structure side and a second reflective structure side spaced along the first horizontal direction; wherein, along the first horizontal direction, the first reflective structure side and A first region is defined between the sides of the first photoluminescent layer, and a second region is defined between the sides of the second reflective structure and the side of the second photoluminescent layer. The first region is not equal to the second Area; wherein, along the first horizontal direction, a third distance between the side of the first reflective structure and the side of the first photoluminescent layer is smaller than the side of the second reflective structure and the second photoluminescent layer A fourth distance between the sides. A light-emitting device with a wafer-level package includes an LED chip including an upper surface, a lower surface opposite to the upper surface, a first vertical surface, a second vertical surface, a first electrode, and a second electrode. The first elevation and the second elevation are both formed between the upper surface and the lower surface, and the first electrode and the second electrode are disposed on the lower surface, wherein the upper surface defines a vertical stagger. A first horizontal direction and a second horizontal direction, the first elevation and the second elevation are separated along the first horizontal direction; and a packaging structure covering the upper surface of the LED chip, the first A facade and the second facade, but the lower surface, the first electrode, and the second electrode are exposed, wherein the packaging structure includes a photoluminescent layer and a reflective structure, and the photoluminescent layer is disposed on the On the upper surface of the LED chip, the photoluminescent layer includes a side surface of the first photoluminescent layer and a side surface of the second photoluminescent layer that are spaced apart along the first horizontal direction, and the reflective structure is along the The first horizontal direction covers the LED chip and the photoinduced An optical layer, and the reflective structure includes a first reflective structure side and a second reflective structure side spaced along the first horizontal direction; wherein, along the first horizontal direction, the first reflective structure side and A first region is defined between the sides of the first photoluminescent layer, and a second region is defined between the sides of the second reflective structure and the side of the second photoluminescent layer. The first region is not equal to the second Area; wherein, along the second horizontal direction, a width of one side surface of the first reflective structure is greater than a width of one side surface of the second reflective structure. The light-emitting device according to any one of claims 6 to 7, wherein the reflective structure further covers the LED chip and the photoluminescent layer along the second horizontal direction. A manufacturing method of a wafer-level packaged light emitting device includes: providing a plurality of LED chips, wherein each of the LED chips includes an upper surface, a lower surface opposite to the upper surface, a first facade, a first Two facades, a first electrode and a second electrode, the first facade and the second facade are all formed between the upper surface and the lower surface, and the first electrode and the second electrode are disposed on the A lower surface, wherein the upper surface defines a first horizontal direction and a second horizontal direction staggered vertically, the first elevation and the second elevation are separated along the first horizontal direction; and A plurality of packaging structures are on the LED chips to cover the upper surface, the first elevation, and the second elevation of each of the LED chips, but expose the lower surface, the first electrode, and the first surface. Two electrodes, wherein the packaging structure includes a first side surface and a second side surface separated along the first horizontal direction, a first area is defined between the first side surface and the first vertical surface, and the Defined between the second side and the second elevation A second region, the first region is not equal to the second region; wherein the steps of forming the packaging structures include cutting the packaging structures such that each of the packaging structures follows the first region; A first distance between the first side surface and the first vertical surface in the horizontal direction is smaller than a second distance between the second side surface and the second vertical surface. A manufacturing method of a wafer-level packaged light emitting device includes: providing a plurality of LED chips, wherein each of the LED chips includes an upper surface, a lower surface opposite to the upper surface, a first facade, a first Two facades, a first electrode and a second electrode, the first facade and the second facade are all formed between the upper surface and the lower surface, and the first electrode and the second electrode are disposed on the A lower surface, wherein the upper surface defines a first horizontal direction and a second horizontal direction staggered vertically, the first elevation and the second elevation are separated along the first horizontal direction; and A plurality of packaging structures are on the LED chips to cover the upper surface, the first elevation, and the second elevation of each of the LED chips, but expose the lower surface, the first electrode, and the first surface. Two electrodes, wherein the packaging structure includes a first side surface and a second side surface separated along the first horizontal direction, a first area is defined between the first side surface and the first vertical surface, and the Defined between the second side and the second elevation A second region, the first region is not equal to the second region; wherein the steps of forming the packaging structures include placing the LED chips in a plurality of cavities of a mold, wherein the molds Each of the cavities includes a chamfered surface; and the packaging structures are respectively formed in the mold cavities, so that each of the packaging structures forms a first side surface spaced apart along the first horizontal direction. And a second side surface, forming a third side surface and a fourth side surface separated along the second horizontal direction, and forming a chamfered surface, so that the chamfered surface connects the third side surface and the second side surface . A manufacturing method of a wafer-level packaged light emitting device includes: providing a plurality of LED chips, wherein each of the LED chips includes an upper surface, a lower surface opposite to the upper surface, a first facade, a first Two facades, a first electrode and a second electrode, the first facade and the second facade are all formed between the upper surface and the lower surface, and the first electrode and the second electrode are disposed on the A lower surface, wherein the upper surface defines a first horizontal direction and a second horizontal direction staggered vertically, the first elevation and the second elevation are separated along the first horizontal direction; and A plurality of packaging structures are on the LED chips to cover the upper surface, the first elevation, and the second elevation of each of the LED chips, but expose the lower surface, the first electrode, and the first surface. Two electrodes, wherein the packaging structure includes a first side surface and a second side surface separated along the first horizontal direction, a first area is defined between the first side surface and the first vertical surface, and the Defined between the second side and the second elevation A second region, the first region is not equal to the second region; wherein the steps of forming the packaging structures include cutting the packaging structures such that each of the packaging structures follows the first region; A first side and a second side separated from each other are formed horizontally, and a third side and a fourth side separated from each other are formed along the second horizontal direction, and a chamfered surface is formed to make the chamfered surface The third side is connected to the second side. The method for manufacturing a light-emitting device according to claim 11, wherein the cutting of the packaging structures is performed by a punching blade, wherein the punching blade includes a plurality of blades.