WO2009069671A1 - 発光装置及びその製造方法 - Google Patents
発光装置及びその製造方法 Download PDFInfo
- Publication number
- WO2009069671A1 WO2009069671A1 PCT/JP2008/071473 JP2008071473W WO2009069671A1 WO 2009069671 A1 WO2009069671 A1 WO 2009069671A1 JP 2008071473 W JP2008071473 W JP 2008071473W WO 2009069671 A1 WO2009069671 A1 WO 2009069671A1
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- WIPO (PCT)
- Prior art keywords
- light
- emitting device
- emitting
- emitted
- transmitting member
- Prior art date
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- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 229910010272 inorganic material Inorganic materials 0.000 abstract 1
- 239000011147 inorganic material Substances 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 230000003287 optical effect Effects 0.000 abstract 1
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-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0091—Scattering means in or on the semiconductor body or semiconductor body package
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Led Device Packages (AREA)
- Led Devices (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
Abstract
Priority Applications (11)
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RU2010126475/28A RU2489774C2 (ru) | 2007-11-29 | 2008-11-26 | Светоизлучающее устройство и способ его изготовления |
US12/745,250 US9024340B2 (en) | 2007-11-29 | 2008-11-26 | Light emitting apparatus and method for producing the same |
EP08853642.0A EP2216834B1 (en) | 2007-11-29 | 2008-11-26 | Light-emitting apparatus |
KR1020107011634A KR101517644B1 (ko) | 2007-11-29 | 2008-11-26 | 발광장치 및 그 제조방법 |
CN2008801181736A CN101878540B (zh) | 2007-11-29 | 2008-11-26 | 发光装置及其制造方法 |
JP2009543833A JP5526782B2 (ja) | 2007-11-29 | 2008-11-26 | 発光装置及びその製造方法 |
US14/688,765 US9853194B2 (en) | 2007-11-29 | 2015-04-16 | Light emitting apparatus and method for producing the same |
US15/811,622 US10522727B2 (en) | 2007-11-29 | 2017-11-13 | Light emitting apparatus and method for producing the same |
US16/695,511 US11257996B2 (en) | 2007-11-29 | 2019-11-26 | Light emitting apparatus and method for producing the same |
US17/574,474 US11735699B2 (en) | 2007-11-29 | 2022-01-12 | Light emitting apparatus and method for producing the same |
US18/344,460 US20230343909A1 (en) | 2007-11-29 | 2023-06-29 | Light emitting apparatus and method for producing the same |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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JP2007-308688 | 2007-11-29 | ||
JP2007308688 | 2007-11-29 |
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Application Number | Title | Priority Date | Filing Date |
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US12/745,250 A-371-Of-International US9024340B2 (en) | 2007-11-29 | 2008-11-26 | Light emitting apparatus and method for producing the same |
US14/688,765 Continuation US9853194B2 (en) | 2007-11-29 | 2015-04-16 | Light emitting apparatus and method for producing the same |
Publications (1)
Publication Number | Publication Date |
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WO2009069671A1 true WO2009069671A1 (ja) | 2009-06-04 |
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PCT/JP2008/071473 WO2009069671A1 (ja) | 2007-11-29 | 2008-11-26 | 発光装置及びその製造方法 |
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US (6) | US9024340B2 (ja) |
EP (1) | EP2216834B1 (ja) |
JP (1) | JP5526782B2 (ja) |
KR (1) | KR101517644B1 (ja) |
CN (1) | CN101878540B (ja) |
RU (1) | RU2489774C2 (ja) |
TW (1) | TWI501431B (ja) |
WO (1) | WO2009069671A1 (ja) |
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US20110303940A1 (en) * | 2010-06-14 | 2011-12-15 | Hyo Jin Lee | Light emitting device package using quantum dot, illumination apparatus and display apparatus |
DE102010031945A1 (de) * | 2010-07-22 | 2012-01-26 | Osram Opto Semiconductors Gmbh | Halbleiterbauelement und Verfahren zur Herstellung eines Halbleiterbauelements |
DE102010044560A1 (de) * | 2010-09-07 | 2012-03-08 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines optoelektronischen Halbleiterbauelements |
DE102010048162A1 (de) | 2010-10-11 | 2012-04-12 | Osram Opto Semiconductors Gmbh | Konversionsbauteil |
DE102010049312B4 (de) | 2010-10-22 | 2023-08-03 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zur Herstellung eines Konversionsplättchens und Konversionsplättchen |
KR20120066973A (ko) * | 2010-12-15 | 2012-06-25 | 삼성엘이디 주식회사 | 발광 디바이스 및 그 제조방법 |
KR20120067153A (ko) * | 2010-12-15 | 2012-06-25 | 삼성엘이디 주식회사 | 발광소자, 발광소자 패키지, 발광소자의 제조방법, 및 발광소자의 패키징 방법 |
JP5763365B2 (ja) * | 2011-02-24 | 2015-08-12 | 日東電工株式会社 | 発光ダイオード素子および発光ダイオード装置 |
EP2500623A1 (en) | 2011-03-18 | 2012-09-19 | Koninklijke Philips Electronics N.V. | Method for providing a reflective coating to a substrate for a light-emitting device |
KR101251738B1 (ko) * | 2011-03-22 | 2013-04-05 | 엘지이노텍 주식회사 | 표시장치 |
JP5953386B2 (ja) * | 2011-03-28 | 2016-07-20 | 日東電工株式会社 | 発光ダイオード装置の製造方法 |
KR20140022019A (ko) * | 2011-04-20 | 2014-02-21 | 가부시키가이샤 에루므 | 발광장치 및 그 제조방법 |
JP5680472B2 (ja) * | 2011-04-22 | 2015-03-04 | シチズンホールディングス株式会社 | 半導体発光装置の製造方法 |
DE102011100728A1 (de) * | 2011-05-06 | 2012-11-08 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauelement |
US9269878B2 (en) * | 2011-05-27 | 2016-02-23 | Lg Innotek Co., Ltd. | Light emitting device and light emitting apparatus |
JP2013021175A (ja) * | 2011-07-12 | 2013-01-31 | Toshiba Corp | 半導体発光素子 |
US9134595B2 (en) * | 2011-09-29 | 2015-09-15 | Casio Computer Co., Ltd. | Phosphor device, illumination apparatus and projector apparatus |
US20130095581A1 (en) * | 2011-10-18 | 2013-04-18 | Taiwan Semiconductor Manufacturing Company, Ltd. | Thick window layer led manufacture |
KR101288367B1 (ko) * | 2011-11-09 | 2013-07-22 | 포항공과대학교 산학협력단 | 백색광 발광 다이오드 및 그 제조방법 |
KR101969334B1 (ko) | 2011-11-16 | 2019-04-17 | 엘지이노텍 주식회사 | 발광 소자 및 이를 구비한 발광 장치 |
US8957429B2 (en) * | 2012-02-07 | 2015-02-17 | Epistar Corporation | Light emitting diode with wavelength conversion layer |
DE102012101102A1 (de) | 2012-02-10 | 2013-08-14 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauelement und Anordnung mit einer Mehrzahl von derartigen Bauelementen |
JP5895598B2 (ja) * | 2012-02-29 | 2016-03-30 | 日亜化学工業株式会社 | 発光装置 |
US20130240934A1 (en) * | 2012-03-14 | 2013-09-19 | Samsung Electronics Co., Ltd. | Light emitting element package and method of manufacturing the same |
TWI499031B (zh) * | 2012-03-22 | 2015-09-01 | Kun Hsin Technology Inc | 發光裝置 |
WO2013168037A1 (en) * | 2012-05-08 | 2013-11-14 | Koninklijke Philips N.V. | Remote phosphor and led package |
JP6099901B2 (ja) * | 2012-08-23 | 2017-03-22 | スタンレー電気株式会社 | 発光装置 |
JP6535598B2 (ja) | 2012-11-07 | 2019-06-26 | ルミレッズ ホールディング ベーフェー | フィルタ及び保護層を含む発光デバイス |
US9054235B2 (en) * | 2013-01-22 | 2015-06-09 | Micron Technology, Inc. | Solid-state transducer devices with optically-transmissive carrier substrates and related systems, methods, and devices |
DE102013100711B4 (de) * | 2013-01-24 | 2021-07-01 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zur Herstellung einer Vielzahl optoelektronischer Bauelemente |
DE102013100821B4 (de) * | 2013-01-28 | 2017-05-04 | Schott Ag | Polykristalline Keramiken, deren Herstellung und Verwendungen |
JP2014225636A (ja) * | 2013-04-16 | 2014-12-04 | 株式会社ディスコ | 発光デバイス |
US10199549B2 (en) | 2013-05-15 | 2019-02-05 | Lumileds Llc | Light emitting device with an optical element and a reflector |
JP6186904B2 (ja) * | 2013-06-05 | 2017-08-30 | 日亜化学工業株式会社 | 発光装置 |
TWI540766B (zh) * | 2013-07-10 | 2016-07-01 | 隆達電子股份有限公司 | 發光二極體封裝結構 |
JP6258619B2 (ja) * | 2013-07-18 | 2018-01-10 | シチズン電子株式会社 | 照明装置 |
DE102013215646A1 (de) * | 2013-08-08 | 2015-02-12 | Osram Opto Semiconductors Gmbh | Anzeigevorrichtung und Verfahren zum Herstellen einer Anzeigevorrichtung |
CN104425672A (zh) * | 2013-08-23 | 2015-03-18 | 展晶科技(深圳)有限公司 | 发光二极管制造方法 |
JP2015056563A (ja) * | 2013-09-12 | 2015-03-23 | 株式会社東芝 | 半導体装置およびその製造方法 |
KR102264061B1 (ko) * | 2013-09-13 | 2021-06-14 | 루미리즈 홀딩 비.브이. | 플립-칩 led를 위한 프레임 기반 패키지 |
DE102013110114A1 (de) * | 2013-09-13 | 2015-04-02 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauteil und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils |
TWI533478B (zh) * | 2013-10-14 | 2016-05-11 | 新世紀光電股份有限公司 | 覆晶式發光二極體封裝結構 |
JP6387780B2 (ja) | 2013-10-28 | 2018-09-12 | 日亜化学工業株式会社 | 発光装置及びその製造方法 |
JP6438648B2 (ja) * | 2013-11-15 | 2018-12-19 | 日亜化学工業株式会社 | 半導体発光装置およびその製造方法 |
RU2545492C1 (ru) * | 2013-12-05 | 2015-04-10 | Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Сибирская государственная геодезическая академия" (ФГБОУ ВПО "СГГА") | Устройство полупроводникового светодиода |
DE102013114691A1 (de) | 2013-12-20 | 2015-06-25 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauteil und adaptiver Scheinwerfer für ein Kraftfahrzeug |
JP6749240B2 (ja) | 2014-01-09 | 2020-09-02 | ルミレッズ ホールディング ベーフェー | 反射側壁を有する発光デバイス |
CN106030837B (zh) * | 2014-02-27 | 2020-05-05 | 亮锐控股有限公司 | 形成波长转换发光器件的方法 |
EP3134674B1 (en) * | 2014-04-21 | 2018-06-13 | Philips Lighting Holding B.V. | Lighting device and luminaire |
JP2015216355A (ja) * | 2014-04-23 | 2015-12-03 | 日東電工株式会社 | 波長変換部材およびその製造方法 |
CN103943735B (zh) * | 2014-04-23 | 2016-08-24 | 陕西光电科技有限公司 | 一种led日光灯管的制作方法 |
CN105098025A (zh) | 2014-05-07 | 2015-11-25 | 新世纪光电股份有限公司 | 发光装置 |
US9997676B2 (en) | 2014-05-14 | 2018-06-12 | Genesis Photonics Inc. | Light emitting device and manufacturing method thereof |
US10439111B2 (en) | 2014-05-14 | 2019-10-08 | Genesis Photonics Inc. | Light emitting device and manufacturing method thereof |
US9543465B2 (en) * | 2014-05-20 | 2017-01-10 | Nichia Corporation | Method for manufacturing light emitting device |
KR102252475B1 (ko) * | 2014-06-02 | 2021-05-17 | 엘지이노텍 주식회사 | 발광 소자 모듈 |
TWI557952B (zh) | 2014-06-12 | 2016-11-11 | 新世紀光電股份有限公司 | 發光元件 |
KR102408839B1 (ko) * | 2014-06-19 | 2022-06-14 | 루미리즈 홀딩 비.브이. | 작은 소스 크기를 갖는 파장 변환 발광 디바이스 |
JP6519311B2 (ja) * | 2014-06-27 | 2019-05-29 | 日亜化学工業株式会社 | 発光装置 |
JP2016027077A (ja) * | 2014-06-30 | 2016-02-18 | パナソニックIpマネジメント株式会社 | 表面処理蛍光体の製造方法、この方法で得られた表面処理蛍光体、並びにこれを用いた波長変換部材及び発光装置 |
TWI641285B (zh) | 2014-07-14 | 2018-11-11 | 新世紀光電股份有限公司 | 發光模組與發光單元的製作方法 |
US10211187B2 (en) | 2014-07-18 | 2019-02-19 | Koninklijke Philips N.V. | Light emitting diodes and reflector |
KR102237112B1 (ko) | 2014-07-30 | 2021-04-08 | 엘지이노텍 주식회사 | 발광 소자 및 이를 구비한 광원 모듈 |
JP6582382B2 (ja) | 2014-09-26 | 2019-10-02 | 日亜化学工業株式会社 | 発光装置の製造方法 |
US20160111581A1 (en) * | 2014-10-16 | 2016-04-21 | Semiconductor Components Industries, Llc | Packaged semiconductor devices and related methods |
JP6190977B6 (ja) * | 2014-12-02 | 2018-06-27 | 董隆 釜原 | 照明装置および照明装置の製造方法 |
US10205063B2 (en) | 2014-12-08 | 2019-02-12 | Lumileds Llc | Wavelength converted semiconductor light emitting device |
JP6476854B2 (ja) * | 2014-12-26 | 2019-03-06 | 日亜化学工業株式会社 | 発光素子の製造方法 |
TWI649900B (zh) * | 2015-02-04 | 2019-02-01 | 億光電子工業股份有限公司 | Led封裝結構及其製造方法 |
CN105990498A (zh) * | 2015-03-18 | 2016-10-05 | 新世纪光电股份有限公司 | 芯片封装结构及其制造方法 |
EP3279951B1 (en) * | 2015-04-03 | 2019-09-11 | Soko Kagaku Co., Ltd. | Nitride-semiconductor ultraviolet-light emitting element |
CN107615497B (zh) * | 2015-05-29 | 2019-05-21 | 西铁城电子株式会社 | 发光装置及其制造方法 |
JP6179555B2 (ja) | 2015-06-01 | 2017-08-16 | 日亜化学工業株式会社 | 発光装置 |
DE102015109413A1 (de) * | 2015-06-12 | 2016-12-15 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung von optoelektronischen Konversions-Halbleiterchips und Verbund von Konversions-Halbleiterchips |
TWI587545B (zh) * | 2015-06-30 | 2017-06-11 | 艾笛森光電股份有限公司 | 發光模組以及具有此發光模組的頭燈 |
JP6623577B2 (ja) * | 2015-06-30 | 2019-12-25 | 日亜化学工業株式会社 | 発光装置の製造方法 |
KR102378761B1 (ko) * | 2015-07-21 | 2022-03-25 | 엘지이노텍 주식회사 | 일체형 발광 패키지 및 이를 이용한 차량용 램프 |
DE102015112042B4 (de) | 2015-07-23 | 2021-07-01 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronische Leuchtvorrichtung |
JP6217705B2 (ja) * | 2015-07-28 | 2017-10-25 | 日亜化学工業株式会社 | 発光装置及びその製造方法 |
KR102501878B1 (ko) * | 2015-08-13 | 2023-02-21 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | 발광소자 패키지 |
KR102373677B1 (ko) * | 2015-08-24 | 2022-03-14 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | 발광소자 |
US10170455B2 (en) * | 2015-09-04 | 2019-01-01 | PlayNitride Inc. | Light emitting device with buffer pads |
CN111211206A (zh) | 2015-09-18 | 2020-05-29 | 新世纪光电股份有限公司 | 发光装置及其制造方法 |
CN105336837A (zh) * | 2015-09-29 | 2016-02-17 | 佛山市国星光电股份有限公司 | 一种led器件及其制作方法 |
KR102481646B1 (ko) | 2015-11-12 | 2022-12-29 | 삼성전자주식회사 | 반도체 발광소자 패키지 |
US10510934B2 (en) | 2015-11-30 | 2019-12-17 | Nichia Corporation | Light emitting device |
CN107046091B (zh) * | 2016-02-05 | 2020-03-06 | 行家光电股份有限公司 | 具光形调整结构的发光装置及其制造方法 |
JP2017157724A (ja) * | 2016-03-02 | 2017-09-07 | デクセリアルズ株式会社 | 表示装置及びその製造方法、並びに発光装置及びその製造方法 |
JP6447557B2 (ja) * | 2016-03-24 | 2019-01-09 | 日亜化学工業株式会社 | 発光装置の製造方法 |
WO2018022456A1 (en) | 2016-07-26 | 2018-02-01 | Cree, Inc. | Light emitting diodes, components and related methods |
US10193043B2 (en) | 2016-07-28 | 2019-01-29 | Lumileds Llc | Light emitting device package with reflective side coating |
KR102208504B1 (ko) * | 2016-07-28 | 2021-01-28 | 루미레즈 엘엘씨 | 반사성 측면 코팅을 갖는 발광 디바이스 패키지 |
CN107706281B (zh) * | 2016-08-09 | 2019-07-19 | 行家光电股份有限公司 | 具湿气阻隔结构的晶片级封装发光装置 |
US10230027B2 (en) | 2016-08-05 | 2019-03-12 | Maven Optronics Co., Ltd. | Moisture-resistant chip scale packaging light-emitting device |
TWI599078B (zh) * | 2016-08-05 | 2017-09-11 | 行家光電股份有限公司 | 具濕氣阻隔結構之晶片級封裝發光裝置 |
CN107968142A (zh) | 2016-10-19 | 2018-04-27 | 新世纪光电股份有限公司 | 发光装置及其制造方法 |
JP6932910B2 (ja) * | 2016-10-27 | 2021-09-08 | 船井電機株式会社 | 表示装置 |
US10971663B2 (en) | 2016-11-08 | 2021-04-06 | Stanley Electric Co., Ltd. | Semiconductor light emitting device |
US10340425B2 (en) | 2016-11-25 | 2019-07-02 | Seoul Viosys Co., Ltd. | Light emitting diode having light blocking layer |
JP2018101464A (ja) * | 2016-12-19 | 2018-06-28 | パナソニックIpマネジメント株式会社 | 波長変換部材、プロジェクタおよび照明装置 |
KR101920259B1 (ko) | 2016-12-26 | 2018-11-26 | (주)솔라루체 | 시트블록을 갖는 led 모듈 |
JP6885055B2 (ja) | 2016-12-26 | 2021-06-09 | 日亜化学工業株式会社 | 充填材、樹脂組成物、パッケージ、発光装置及びそれらの製造方法 |
CN108336075B (zh) * | 2017-01-20 | 2020-03-27 | 光宝光电(常州)有限公司 | 发光二极管封装结构、发光二极管封装模块及其成形方法 |
CN106848036B (zh) * | 2017-03-14 | 2018-10-30 | 华进半导体封装先导技术研发中心有限公司 | 一种led封装结构及其封装方法 |
CN106960821B (zh) * | 2017-03-14 | 2019-02-05 | 华进半导体封装先导技术研发中心有限公司 | 一种led组件及其制备方法 |
EP3396725B1 (en) * | 2017-04-25 | 2021-01-13 | Nichia Corporation | Light emitting device and method of manufacturing same |
CN109285929B (zh) * | 2017-07-21 | 2023-09-08 | 日亚化学工业株式会社 | 发光装置、集成型发光装置以及发光模块 |
JP7037034B2 (ja) * | 2017-08-31 | 2022-03-16 | 日亜化学工業株式会社 | 充填材、樹脂組成物、パッケージ、発光装置及びそれらの製造方法 |
US10784423B2 (en) | 2017-11-05 | 2020-09-22 | Genesis Photonics Inc. | Light emitting device |
TWI778167B (zh) | 2017-11-05 | 2022-09-21 | 新世紀光電股份有限公司 | 發光裝置及其製作方法 |
JP7080625B2 (ja) * | 2017-12-01 | 2022-06-06 | スタンレー電気株式会社 | 発光装置 |
KR20190074233A (ko) * | 2017-12-19 | 2019-06-27 | 서울반도체 주식회사 | 발광 소자 및 이를 포함하는 발광 모듈 |
CN110137332A (zh) | 2018-02-08 | 2019-08-16 | 隆达电子股份有限公司 | 发光二极管封装结构 |
EP3543776B1 (en) | 2018-03-23 | 2024-06-26 | Maven Optronics Co., Ltd. | Chip-scale linear light-emitting device |
CN110364608B (zh) * | 2018-03-26 | 2022-02-25 | 行家光电股份有限公司 | 晶片级线型光源发光装置 |
TWI688806B (zh) * | 2018-03-23 | 2020-03-21 | 行家光電股份有限公司 | 線型光源發光裝置、背光模組及發光裝置 |
US11121298B2 (en) | 2018-05-25 | 2021-09-14 | Creeled, Inc. | Light-emitting diode packages with individually controllable light-emitting diode chips |
CN112368848A (zh) * | 2018-06-21 | 2021-02-12 | 新唐科技日本株式会社 | 白色发光装置 |
US11233183B2 (en) | 2018-08-31 | 2022-01-25 | Creeled, Inc. | Light-emitting diodes, light-emitting diode arrays and related devices |
US11335833B2 (en) | 2018-08-31 | 2022-05-17 | Creeled, Inc. | Light-emitting diodes, light-emitting diode arrays and related devices |
USD902448S1 (en) | 2018-08-31 | 2020-11-17 | Cree, Inc. | Light emitting diode package |
KR102065965B1 (ko) * | 2018-09-12 | 2020-01-14 | 유재익 | 광추출 효율이 개선된 자외선 조사용 led칩 |
KR102655479B1 (ko) * | 2018-09-13 | 2024-04-08 | 엘지전자 주식회사 | Led 필름 |
JP7161100B2 (ja) * | 2018-09-25 | 2022-10-26 | 日亜化学工業株式会社 | 発光装置及びその製造方法 |
KR102590229B1 (ko) * | 2018-10-15 | 2023-10-17 | 삼성전자주식회사 | Led 소자 및 led 소자의 제조 방법 |
US11482650B2 (en) * | 2018-11-07 | 2022-10-25 | Seoul Viosys Co., Ltd. | Light emitting device including light shielding layer |
CN109860164A (zh) * | 2019-02-26 | 2019-06-07 | 深圳市穗晶光电股份有限公司 | 一种基于陶瓷荧光片封装的车用led光源及其封装工艺 |
US11101411B2 (en) | 2019-06-26 | 2021-08-24 | Creeled, Inc. | Solid-state light emitting devices including light emitting diodes in package structures |
US11189757B2 (en) | 2019-12-12 | 2021-11-30 | Lumileds Llc | Light emitting diodes with reflective sidewalls comprising porous particles |
TWI764341B (zh) * | 2020-04-07 | 2022-05-11 | 億光電子工業股份有限公司 | 發光裝置 |
US11444225B2 (en) | 2020-09-08 | 2022-09-13 | Dominant Opto Technologies Sdn Bhd | Light emitting diode package having a protective coating |
DE102020125056A1 (de) * | 2020-09-25 | 2022-03-31 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronisches bauelement und verfahren zur herstellung eines optoelektronischen bauelements |
US11329206B2 (en) | 2020-09-28 | 2022-05-10 | Dominant Opto Technologies Sdn Bhd | Lead frame and housing sub-assembly for use in a light emitting diode package and method for manufacturing the same |
CN113437198B (zh) * | 2021-07-13 | 2023-01-03 | 中国科学院苏州纳米技术与纳米仿生研究所广东(佛山)研究院 | 一种深紫外led封装方法 |
TWI792460B (zh) * | 2021-07-28 | 2023-02-11 | 友達光電股份有限公司 | 顯示面板及其製造方法 |
JP2023076327A (ja) | 2021-11-22 | 2023-06-01 | スタンレー電気株式会社 | 半導体発光装置及び半導体発光モジュール |
WO2024006168A1 (en) * | 2022-06-29 | 2024-01-04 | Lumileds Llc | Improved phosphor-converted light emitting device |
WO2024091380A1 (en) * | 2022-10-28 | 2024-05-02 | Applied Materials, Inc. | Apparatus, systems, and methods of using a retaining device for light-emitting diode laser lift-off |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002050800A (ja) * | 2000-05-24 | 2002-02-15 | Nichia Chem Ind Ltd | 発光装置及びその形成方法 |
WO2004065324A1 (ja) * | 2003-01-20 | 2004-08-05 | Ube Industries, Ltd. | 光変換用セラミックス複合材料およびその用途 |
JP2006352061A (ja) * | 2004-11-12 | 2006-12-28 | Philips Lumileds Lightng Co Llc | 発光素子への光学要素の結合 |
JP2007019096A (ja) * | 2005-07-05 | 2007-01-25 | Toyoda Gosei Co Ltd | 発光装置及びその製造方法 |
WO2007034919A1 (ja) * | 2005-09-22 | 2007-03-29 | Mitsubishi Chemical Corporation | 半導体発光デバイス用部材及びその製造方法、並びにそれを用いた半導体発光デバイス |
Family Cites Families (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11320962A (ja) | 1998-05-19 | 1999-11-24 | Canon Inc | Led露光ヘッド |
US6653765B1 (en) * | 2000-04-17 | 2003-11-25 | General Electric Company | Uniform angular light distribution from LEDs |
US6614103B1 (en) * | 2000-09-01 | 2003-09-02 | General Electric Company | Plastic packaging of LED arrays |
RU2187175C1 (ru) | 2001-04-05 | 2002-08-10 | Общество с ограниченной ответственностью "Корвет-Лайтс" | Светодиодное устройство |
JP3991612B2 (ja) | 2001-04-09 | 2007-10-17 | 日亜化学工業株式会社 | 発光素子 |
DE10137641A1 (de) | 2001-08-03 | 2003-02-20 | Osram Opto Semiconductors Gmbh | Hybrid-LED |
JP3749243B2 (ja) * | 2001-09-03 | 2006-02-22 | 松下電器産業株式会社 | 半導体発光デバイス,発光装置及び半導体発光デバイスの製造方法 |
US6870311B2 (en) * | 2002-06-07 | 2005-03-22 | Lumileds Lighting U.S., Llc | Light-emitting devices utilizing nanoparticles |
JP4507636B2 (ja) | 2003-03-27 | 2010-07-21 | 日亜化学工業株式会社 | 半導体発光素子 |
US20070013057A1 (en) * | 2003-05-05 | 2007-01-18 | Joseph Mazzochette | Multicolor LED assembly with improved color mixing |
US6914261B2 (en) * | 2003-10-10 | 2005-07-05 | Lambda Opto Technology Co., Ltd. | Light emitting diode module |
JP4443188B2 (ja) | 2003-10-30 | 2010-03-31 | 京セラ株式会社 | 発光素子収納用パッケージおよび発光装置 |
DE602004028648D1 (de) * | 2003-11-25 | 2010-09-23 | Panasonic Elec Works Co Ltd | Lichtemittierendes bauelement mit einem leuchtdiodenchip |
JP2005191420A (ja) * | 2003-12-26 | 2005-07-14 | Stanley Electric Co Ltd | 波長変換層を有する半導体発光装置およびその製造方法 |
JP4516337B2 (ja) | 2004-03-25 | 2010-08-04 | シチズン電子株式会社 | 半導体発光装置 |
JP3983793B2 (ja) * | 2004-04-19 | 2007-09-26 | 松下電器産業株式会社 | Led照明光源の製造方法およびled照明光源 |
JP4667803B2 (ja) | 2004-09-14 | 2011-04-13 | 日亜化学工業株式会社 | 発光装置 |
JP2006093612A (ja) | 2004-09-27 | 2006-04-06 | Kyocera Corp | 発光装置および照明装置 |
WO2006087651A2 (en) | 2005-02-16 | 2006-08-24 | Koninklijke Philips Electronics N.V. | Light emitting device comprising inorganic light emitting diode(s) |
KR101204115B1 (ko) * | 2005-02-18 | 2012-11-22 | 니치아 카가쿠 고교 가부시키가이샤 | 배광 특성을 제어하기 위한 렌즈를 구비한 발광 장치 |
KR20070112411A (ko) | 2005-03-29 | 2007-11-23 | 쿄세라 코포레이션 | 반사 부재, 이것을 이용한 발광 장치 및 조명 장치 |
WO2006111907A2 (en) | 2005-04-20 | 2006-10-26 | Philips Intellectual Property & Standards Gmbh | Illumination system comprising a ceramic luminescence converter |
JP5196711B2 (ja) | 2005-07-26 | 2013-05-15 | 京セラ株式会社 | 発光装置およびそれを用いた照明装置 |
JP2007173397A (ja) | 2005-12-20 | 2007-07-05 | Matsushita Electric Ind Co Ltd | 発光モジュールとこれを用いた表示装置及び照明装置 |
EP2089916A1 (en) | 2006-11-07 | 2009-08-19 | Philips Intellectual Property & Standards GmbH | Arrangement for emitting mixed light |
JP5526782B2 (ja) * | 2007-11-29 | 2014-06-18 | 日亜化学工業株式会社 | 発光装置及びその製造方法 |
-
2008
- 2008-11-26 JP JP2009543833A patent/JP5526782B2/ja active Active
- 2008-11-26 KR KR1020107011634A patent/KR101517644B1/ko active IP Right Grant
- 2008-11-26 EP EP08853642.0A patent/EP2216834B1/en active Active
- 2008-11-26 US US12/745,250 patent/US9024340B2/en active Active
- 2008-11-26 WO PCT/JP2008/071473 patent/WO2009069671A1/ja active Application Filing
- 2008-11-26 RU RU2010126475/28A patent/RU2489774C2/ru active
- 2008-11-26 CN CN2008801181736A patent/CN101878540B/zh active Active
- 2008-11-28 TW TW097146455A patent/TWI501431B/zh active
-
2015
- 2015-04-16 US US14/688,765 patent/US9853194B2/en active Active
-
2017
- 2017-11-13 US US15/811,622 patent/US10522727B2/en active Active
-
2019
- 2019-11-26 US US16/695,511 patent/US11257996B2/en active Active
-
2022
- 2022-01-12 US US17/574,474 patent/US11735699B2/en active Active
-
2023
- 2023-06-29 US US18/344,460 patent/US20230343909A1/en active Pending
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002050800A (ja) * | 2000-05-24 | 2002-02-15 | Nichia Chem Ind Ltd | 発光装置及びその形成方法 |
WO2004065324A1 (ja) * | 2003-01-20 | 2004-08-05 | Ube Industries, Ltd. | 光変換用セラミックス複合材料およびその用途 |
JP2006352061A (ja) * | 2004-11-12 | 2006-12-28 | Philips Lumileds Lightng Co Llc | 発光素子への光学要素の結合 |
JP2007019096A (ja) * | 2005-07-05 | 2007-01-25 | Toyoda Gosei Co Ltd | 発光装置及びその製造方法 |
WO2007034919A1 (ja) * | 2005-09-22 | 2007-03-29 | Mitsubishi Chemical Corporation | 半導体発光デバイス用部材及びその製造方法、並びにそれを用いた半導体発光デバイス |
Cited By (191)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11735699B2 (en) | 2007-11-29 | 2023-08-22 | Nichia Corporation | Light emitting apparatus and method for producing the same |
US11257996B2 (en) * | 2007-11-29 | 2022-02-22 | Nichia Corporation | Light emitting apparatus and method for producing the same |
JP2010141119A (ja) * | 2008-12-11 | 2010-06-24 | Nitto Denko Corp | 光半導体封止用シート |
JP2010238846A (ja) * | 2009-03-31 | 2010-10-21 | Nichia Corp | 発光装置 |
US20130056781A1 (en) * | 2009-04-20 | 2013-03-07 | Nichia Corporation | Light emitting device |
US8330182B2 (en) * | 2009-04-20 | 2012-12-11 | Nichia Corporation | Light emitting device |
US20130313602A1 (en) * | 2009-04-20 | 2013-11-28 | Nichia Corporation | Light emitting device |
US8921882B2 (en) | 2009-04-20 | 2014-12-30 | Nichia Corporation | Light emitting device including light reflecting resin and translucent material |
US20100264438A1 (en) * | 2009-04-20 | 2010-10-21 | Nichia Corporation | Light emitting device |
US8525218B2 (en) | 2009-04-20 | 2013-09-03 | Nichia Corporation | Light emitting device |
JP2010283244A (ja) * | 2009-06-05 | 2010-12-16 | Mitsubishi Chemicals Corp | 半導体発光装置、照明装置、及び画像表示装置 |
JP2010283281A (ja) * | 2009-06-08 | 2010-12-16 | Nichia Corp | 発光装置 |
US9048404B2 (en) * | 2009-07-06 | 2015-06-02 | Zhuo Sun | Thin flat solid state light source module |
JP2012533186A (ja) * | 2009-07-16 | 2012-12-20 | フィリップス ルミレッズ ライティング カンパニー リミテッド ライアビリティ カンパニー | Ledのための反射基板 |
KR101737655B1 (ko) * | 2009-07-16 | 2017-05-18 | 루미레즈 엘엘씨 | Led를 위한 반사성 기판 |
CN102549783A (zh) * | 2009-07-16 | 2012-07-04 | 飞利浦拉米尔德斯照明设备有限责任公司 | 用于led的反射基底 |
TWI502778B (zh) * | 2009-07-23 | 2015-10-01 | Philips Lumileds Lighting Co | 包含塑模反射型側壁塗層的發光二極體 |
KR101736518B1 (ko) | 2009-07-23 | 2017-05-16 | 루미레즈 엘엘씨 | 몰딩된 반사 측벽 코팅을 갖는 led |
US9728683B2 (en) | 2009-08-07 | 2017-08-08 | Osram Opto Semiconductors Gmbh | Optoelectronic semiconductor component |
US11749776B2 (en) | 2009-08-07 | 2023-09-05 | Osram Opto Semiconductors Gmbh | Optoelectronic semiconductor component |
US12002901B2 (en) | 2009-08-07 | 2024-06-04 | Osram Opto Semiconductors Gmbh | Optoelectronic semiconductor component |
CN102473814A (zh) * | 2009-08-07 | 2012-05-23 | 奥斯兰姆奥普托半导体有限责任公司 | 用于制造光电子半导体器件的方法和光电子半导体器件 |
US8723192B2 (en) | 2009-08-07 | 2014-05-13 | Osram Opto Semiconductors Gmbh | Method for producing an optoelectronic semiconductor component and optoelectronic semiconductor component |
US9209328B2 (en) | 2009-08-07 | 2015-12-08 | Osram Opto Semiconductors Gmbh | Optoelectronic semiconductor component |
US11239386B2 (en) | 2009-08-07 | 2022-02-01 | Osram Opto Semiconductors Gmbh | Optoelectronic semiconductor component |
US9985171B2 (en) | 2009-08-07 | 2018-05-29 | Osram Opto Semiconductors Gmbh | Optoelectronic semiconductor component |
US10665747B2 (en) | 2009-08-07 | 2020-05-26 | Osram Opto Semiconductors Gmbh | Optoelectronic semiconductor component |
US9490396B2 (en) | 2009-08-07 | 2016-11-08 | Osram Opto Semiconductors Gmbh | Optoelectronic semiconductor component |
WO2011027240A1 (en) * | 2009-09-02 | 2011-03-10 | Koninklijke Philips Electronics N.V. | Led package with phosphor plate and reflective substrate |
JP2013504188A (ja) * | 2009-09-04 | 2013-02-04 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング | 変換手段体、オプトエレクトロニクス半導体チップ及びオプトエレクトロニクス半導体チップの製造方法 |
US9055655B2 (en) | 2009-09-04 | 2015-06-09 | Osram Opto Semiconductors Gmbh | Conversion medium body, optoelectronic semiconductor chip and method of producing an optoelectronic semiconductor chip |
US20120193666A1 (en) * | 2009-09-14 | 2012-08-02 | Sony Chemical & Information Device Corporation | Light-reflective anisotropic conductive adhesive and light-emitting device |
US9548141B2 (en) * | 2009-09-14 | 2017-01-17 | Dexerials Corporation | Light-reflective anisotropic conductive adhesive and light-emitting device |
US9099621B2 (en) | 2009-09-25 | 2015-08-04 | Kabushiki Kaisha Toshiba | Semiconductor light-emitting device and method for manufacturing same |
US8350285B2 (en) | 2009-09-25 | 2013-01-08 | Kabushiki Kaisha Toshiba | Semiconductor light-emitting device and method for manufacturing same |
US8759863B2 (en) | 2009-09-25 | 2014-06-24 | Kabushiki Kaisha Toshiba | Semiconductor light-emitting device and method for manufacturing same |
EP2302708A3 (en) * | 2009-09-25 | 2012-06-13 | Kabushiki Kaisha Toshiba | Semiconductor light-emitting device and method for manufacturing same |
US9240520B2 (en) | 2009-09-25 | 2016-01-19 | Kabushiki Kaisha Toshiba | Semiconductor light-emitting device and method for manufacturing same |
EP2483937B1 (de) * | 2009-09-30 | 2019-01-09 | OSRAM Opto Semiconductors GmbH | Optoelektronisches bauelement |
US9340710B2 (en) | 2009-10-16 | 2016-05-17 | Dexerials Corporation | Light-reflective conductive particle, anisotropic conductive adhesive and light-emitting device |
JP2013510422A (ja) * | 2009-11-06 | 2013-03-21 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | フリップチップledのためのシリコーンベースの反射性アンダーフィル及び熱カプラ |
US8471280B2 (en) * | 2009-11-06 | 2013-06-25 | Koninklijke Philips Electronics N.V. | Silicone based reflective underfill and thermal coupler |
WO2011055249A3 (en) * | 2009-11-06 | 2015-11-26 | Koninklijke Philips Electronics N.V. | Silicone based reflective underfill and thermal coupler for flip chip led |
KR101833786B1 (ko) * | 2009-11-06 | 2018-03-14 | 루미리즈 홀딩 비.브이. | 플립 칩 led를 위한 실리콘 기반 반사성 언더필 및 열 커플러 |
CN102971877A (zh) * | 2009-11-06 | 2013-03-13 | 皇家飞利浦电子股份有限公司 | 用于倒装芯片led的基于硅树脂的反射底部填充和热耦合器 |
TWI504029B (zh) * | 2009-11-06 | 2015-10-11 | Koninkl Philips Electronics Nv | 應用於覆晶發光二極體之聚矽氧基反射性底部填充物及熱耦合器 |
CN102652369A (zh) * | 2009-12-11 | 2012-08-29 | 欧司朗光电半导体有限公司 | 光电子半导体构件 |
US9029907B2 (en) | 2009-12-11 | 2015-05-12 | Osram Opto Semiconductor Gmbh | Optoelectronic semiconductor component |
WO2011069791A1 (de) * | 2009-12-11 | 2011-06-16 | Osram Opto Semiconductors Gmbh | Optoelektronisches halbleiterbauteil |
CN105023999A (zh) * | 2009-12-11 | 2015-11-04 | 欧司朗光电半导体有限公司 | 光电子半导体构件 |
DE102009058006B4 (de) | 2009-12-11 | 2022-03-31 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronisches Halbleiterbauteil |
EP2510558B1 (de) * | 2009-12-11 | 2019-06-26 | OSRAM Opto Semiconductors GmbH | Optoelektronisches halbleiterbauteil |
JP2013513934A (ja) * | 2009-12-11 | 2013-04-22 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング | オプトエレクトロニクス半導体部品 |
US20120299041A1 (en) * | 2009-12-11 | 2012-11-29 | Osram Opto Semiconductors Gmbh | Optoelectronic Semiconductor Component |
JP2011134829A (ja) * | 2009-12-24 | 2011-07-07 | Nichia Corp | 発光装置 |
DE112011100376B4 (de) | 2010-01-29 | 2024-06-27 | Citizen Electronics Co., Ltd. | Verfahren zur herstellung einer licht aussendenden vorrichtung |
US9887329B2 (en) | 2010-02-09 | 2018-02-06 | Nichia Corporation | Light emitting device and method for manufacturing light emitting device |
US10230034B2 (en) | 2010-02-09 | 2019-03-12 | Nichia Corporation | Light emitting device and method for manufacturing light emitting device |
US8377726B2 (en) | 2010-03-23 | 2013-02-19 | Kabushiki Kaisha Toshiba | Method for manufacturing light emitting device and light emitting device |
JP2011199193A (ja) * | 2010-03-23 | 2011-10-06 | Toshiba Corp | 発光装置及びその製造方法 |
DE102010003321A1 (de) * | 2010-03-26 | 2011-09-29 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement |
US9293642B2 (en) | 2010-04-08 | 2016-03-22 | Nichia Corporation | Light emitting device including light emitting element and wavelength converting member with regions having irregular atomic arrangments |
US9293643B2 (en) | 2010-04-08 | 2016-03-22 | Nichia Corporation | Method of manufacturing light emitting device including light emitting element and wavelength converting member |
US8835931B2 (en) | 2010-04-16 | 2014-09-16 | Osram Opto Semiconductors Gmbh | Optoelectronic component and method for producing an optoelectronic component |
JP2013526016A (ja) * | 2010-04-16 | 2013-06-20 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング | オプトエレクトロニクスデバイス及び該オプトエレクトロニクスデバイスの製造方法 |
CN104979339A (zh) * | 2010-04-16 | 2015-10-14 | 欧司朗光电半导体有限公司 | 光电子器件和用于制造光电子器件的方法 |
CN104979339B (zh) * | 2010-04-16 | 2018-06-26 | 欧司朗光电半导体有限公司 | 光电子器件和用于制造光电子器件的方法 |
CN102859729A (zh) * | 2010-04-30 | 2013-01-02 | 欧司朗光电半导体有限公司 | 光电子器件和用于制造光电子器件的方法 |
WO2011134777A1 (de) * | 2010-04-30 | 2011-11-03 | Osram Opto Semiconductors Gmbh | Optoelektronisches bauelement und verfahren zum herstellen eines optoelektronischen bauelements |
KR101862818B1 (ko) * | 2010-04-30 | 2018-05-30 | 오스람 옵토 세미컨덕터스 게엠베하 | 광전자 컴포넌트 및 광전자 컴포넌트를 제조하기 위한 방법 |
US9293671B2 (en) | 2010-04-30 | 2016-03-22 | Osram Opto Semiconductors Gmbh | Optoelectronic component and method for producing an optoelectronic component |
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CN107123716A (zh) * | 2010-05-27 | 2017-09-01 | 欧司朗光电半导体有限公司 | 电子装置 |
CN107123716B (zh) * | 2010-05-27 | 2019-04-02 | 欧司朗光电半导体有限公司 | 电子装置 |
JP2011258665A (ja) * | 2010-06-07 | 2011-12-22 | Toshiba Corp | 半導体発光装置および半導体発光装置の製造方法 |
US8981412B2 (en) | 2010-06-07 | 2015-03-17 | Kabushiki Kaisha Toshiba | Optical semiconductor device and method for manufacturing same |
KR101833471B1 (ko) | 2010-06-24 | 2018-02-28 | 오스람 옵토 세미컨덕터스 게엠베하 | 광전 반도체 소자 |
US10217915B2 (en) | 2010-06-24 | 2019-02-26 | Osram Opto Semiconductors Gmbh | Optoelectronic semiconductor component |
JP2013530541A (ja) * | 2010-07-07 | 2013-07-25 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング | 発光ダイオード |
US9431378B2 (en) | 2010-07-07 | 2016-08-30 | Osram Opto Semiconductors Gmbh | Light-emitting diodes |
EP2591502B1 (de) * | 2010-07-07 | 2017-10-11 | OSRAM Opto Semiconductors GmbH | Leuchtdiode |
JP2013534733A (ja) * | 2010-07-15 | 2013-09-05 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング | オプトエレクトロニクス半導体モジュール |
EP2593973B1 (de) * | 2010-07-15 | 2017-11-22 | OSRAM Opto Semiconductors GmbH | Optoelektronisches halbleiterbauteil |
KR101775183B1 (ko) | 2010-07-15 | 2017-09-05 | 오스람 옵토 세미컨덕터스 게엠베하 | 광전자 반도체 부품 |
US10050022B2 (en) | 2010-07-26 | 2018-08-14 | Osram Opto Semiconductors Gmbh | Optoelectronic component |
EP2599120B1 (de) * | 2010-07-26 | 2017-11-08 | OSRAM Opto Semiconductors GmbH | Optoelektronisches bauelement |
US9520442B2 (en) | 2010-07-26 | 2016-12-13 | Osram Opto Semiconductors Gmbh | Optoelectronic component |
US9276181B2 (en) | 2010-10-29 | 2016-03-01 | Nichia Corporation | Light emitting apparatus and production method thereof |
JP2012099544A (ja) * | 2010-10-29 | 2012-05-24 | Nichia Chem Ind Ltd | 発光装置の製造方法 |
US11876153B2 (en) | 2010-10-29 | 2024-01-16 | Nichia Corporation | Light emitting apparatus and production method thereof |
US8759124B2 (en) | 2010-10-29 | 2014-06-24 | Nichia Corporation | Light emitting apparatus and production method thereof |
EP2448028A2 (en) | 2010-10-29 | 2012-05-02 | Nichia Corporation | Light emitting apparatus and production method thereof |
JP2012099545A (ja) * | 2010-10-29 | 2012-05-24 | Nichia Chem Ind Ltd | 発光装置及びその製造方法 |
US11626543B2 (en) | 2010-10-29 | 2023-04-11 | Nichia Corporation | Light emitting apparatus and production method thereof |
US10741729B2 (en) | 2010-10-29 | 2020-08-11 | Nichia Corporation | Light emitting apparatus and production method thereof |
US9076948B2 (en) | 2010-10-29 | 2015-07-07 | Nichia Corporation | Light emitting apparatus and production method thereof |
JP2012169442A (ja) * | 2011-02-14 | 2012-09-06 | Stanley Electric Co Ltd | 発光装置およびその製造方法 |
US8809900B2 (en) | 2011-03-28 | 2014-08-19 | Nitto Denko Corporation | Light emitting diode device and producing method thereof |
JP2012216713A (ja) * | 2011-03-28 | 2012-11-08 | Nitto Denko Corp | 発光ダイオード装置およびその製造方法 |
JP2012216712A (ja) * | 2011-03-28 | 2012-11-08 | Nitto Denko Corp | 発光ダイオード装置の製造方法および発光ダイオード素子 |
JP2012222320A (ja) * | 2011-04-14 | 2012-11-12 | Nitto Denko Corp | 発光素子転写シートの製造方法、発光装置の製造方法、発光素子転写シートおよび発光装置 |
US8877528B2 (en) | 2011-04-14 | 2014-11-04 | Nitto Denko Corporation | Producing method of light emitting element transfer sheet, producing method of light emitting device, light emitting element transfer sheet, and light emitting device |
US9450160B2 (en) | 2011-04-14 | 2016-09-20 | Nitto Denko Corporation | Reflecting resin sheet, light emitting diode device and producing method thereof |
JP2012222317A (ja) * | 2011-04-14 | 2012-11-12 | Nitto Denko Corp | 反射樹脂シート、発光ダイオード装置およびその製造方法 |
JP2012222319A (ja) * | 2011-04-14 | 2012-11-12 | Nitto Denko Corp | 蛍光反射シート、発光ダイオード装置およびその製造方法 |
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US9214611B2 (en) | 2011-04-14 | 2015-12-15 | Nitto Denko Corporation | Reflecting resin sheet, light emitting diode device and producing method thereof |
JP2012222315A (ja) * | 2011-04-14 | 2012-11-12 | Nitto Denko Corp | 反射樹脂シート、発光ダイオード装置およびその製造方法 |
JP2013012544A (ja) * | 2011-06-28 | 2013-01-17 | Citizen Electronics Co Ltd | 発光装置とその製造方法 |
JP2013140894A (ja) * | 2012-01-05 | 2013-07-18 | Citizen Electronics Co Ltd | Led装置及びその製造方法 |
JPWO2013115379A1 (ja) * | 2012-02-02 | 2015-05-11 | シチズンホールディングス株式会社 | 半導体発光装置及びその製造方法 |
US9391050B2 (en) | 2012-02-02 | 2016-07-12 | Citizen Holdings Co., Ltd. | Semiconductor light emitting device and fabrication method for same |
WO2013115379A1 (ja) * | 2012-02-02 | 2013-08-08 | シチズンホールディングス株式会社 | 半導体発光装置及びその製造方法 |
JP2013251417A (ja) * | 2012-06-01 | 2013-12-12 | Nichia Chem Ind Ltd | 発光装置 |
US9362258B2 (en) | 2012-09-27 | 2016-06-07 | Osram Opto Semiconductors Gmbh | Optoelectronic component having chips and conversion elements |
JP2015530754A (ja) * | 2012-09-27 | 2015-10-15 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH | オプトエレクトロニクス部品およびその製造方法 |
JP2014112635A (ja) * | 2012-11-09 | 2014-06-19 | Nichia Chem Ind Ltd | 発光装置の製造方法および発光装置 |
JP2014107307A (ja) * | 2012-11-22 | 2014-06-09 | Nichia Chem Ind Ltd | 発光装置 |
JP2013042191A (ja) * | 2012-11-30 | 2013-02-28 | Toshiba Corp | 半導体発光装置 |
JP2014110333A (ja) * | 2012-12-03 | 2014-06-12 | Citizen Holdings Co Ltd | Led装置及びその製造方法 |
WO2014091914A1 (ja) * | 2012-12-10 | 2014-06-19 | シチズンホールディングス株式会社 | Led装置及びその製造方法 |
US9490398B2 (en) | 2012-12-10 | 2016-11-08 | Citizen Holdings Co., Ltd. | Manufacturing method of light emitting device in a flip-chip configuration with reduced package size |
JP5611492B1 (ja) * | 2012-12-10 | 2014-10-22 | シチズンホールディングス株式会社 | Led装置及びその製造方法 |
US9065023B2 (en) | 2012-12-18 | 2015-06-23 | Toyoda Gosei, Co., Ltd. | Light emitting device and manufacturing method for the same |
WO2014122881A1 (ja) * | 2013-02-07 | 2014-08-14 | パナソニック株式会社 | 発光装置 |
JPWO2014171277A1 (ja) * | 2013-04-17 | 2017-02-23 | 日亜化学工業株式会社 | 発光装置 |
JP2016066819A (ja) * | 2013-04-19 | 2016-04-28 | 隆達電子股▲ふん▼有限公司 | Ledディスプレイ及びその製造方法 |
JP2013179347A (ja) * | 2013-05-23 | 2013-09-09 | Toshiba Corp | 半導体発光装置 |
JP2013168685A (ja) * | 2013-06-03 | 2013-08-29 | Nichia Chem Ind Ltd | 発光装置 |
JP2015023162A (ja) * | 2013-07-19 | 2015-02-02 | 日亜化学工業株式会社 | 発光装置 |
JP7203060B2 (ja) | 2013-08-20 | 2023-01-12 | ルミレッズ ホールディング ベーフェー | 発光デバイス |
JP2020109849A (ja) * | 2013-08-20 | 2020-07-16 | ルミレッズ ホールディング ベーフェー | 発光デバイス |
JP2014030026A (ja) * | 2013-08-30 | 2014-02-13 | Dexerials Corp | 異方性導電接着剤及び発光装置 |
US9356206B2 (en) | 2013-10-16 | 2016-05-31 | Toyoda Gosei Co., Ltd. | Light emitting device |
JP2015126209A (ja) * | 2013-12-27 | 2015-07-06 | 日亜化学工業株式会社 | 発光装置 |
CN105874617A (zh) * | 2014-01-07 | 2016-08-17 | 皇家飞利浦有限公司 | 具有磷光体转换器的无胶发光器件 |
US11024781B2 (en) | 2014-01-07 | 2021-06-01 | Lumileds Llc | Glueless light emitting device with phosphor converter |
US9576941B2 (en) | 2014-01-21 | 2017-02-21 | Toyoda Gosei Co., Ltd. | Light-emitting device and method of manufacturing the same |
US9583682B2 (en) | 2014-01-21 | 2017-02-28 | Toyoda Gosei Co., Ltd. | Light-emitting device and method of manufacturing the same |
JP2014160870A (ja) * | 2014-05-14 | 2014-09-04 | Toshiba Corp | 半導体発光装置及びその製造方法 |
JP2021166315A (ja) * | 2014-05-21 | 2021-10-14 | 日亜化学工業株式会社 | 発光装置 |
JP7148826B2 (ja) | 2014-05-21 | 2022-10-06 | 日亜化学工業株式会社 | 発光装置 |
JP2017533598A (ja) * | 2014-09-01 | 2017-11-09 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH | 発光ダイオード素子 |
JP2017527122A (ja) * | 2014-09-08 | 2017-09-14 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH | オプトエレクトロニクスモジュール |
US10276762B2 (en) | 2014-09-08 | 2019-04-30 | Osram Opto Semiconductors Gmbh | Optoelectronic component |
JP2014239263A (ja) * | 2014-09-25 | 2014-12-18 | 株式会社東芝 | 光半導体装置 |
JP2016100457A (ja) * | 2014-11-21 | 2016-05-30 | スタンレー電気株式会社 | 発光装置 |
JP2015073140A (ja) * | 2015-01-20 | 2015-04-16 | 日東電工株式会社 | 発光ダイオード装置 |
JP2015111743A (ja) * | 2015-03-20 | 2015-06-18 | スタンレー電気株式会社 | 発光装置およびその製造方法 |
JP2015201657A (ja) * | 2015-06-11 | 2015-11-12 | 日亜化学工業株式会社 | 発光装置 |
JP2017055006A (ja) * | 2015-09-11 | 2017-03-16 | 株式会社東芝 | 発光装置 |
JP2016012744A (ja) * | 2015-10-22 | 2016-01-21 | 株式会社東芝 | 半導体発光装置、半導体発光装置の製造方法、発光装置の製造方法 |
JP7104822B2 (ja) | 2015-12-01 | 2022-07-21 | シャープ株式会社 | 画像形成素子、及び製造方法 |
WO2017094461A1 (ja) * | 2015-12-01 | 2017-06-08 | シャープ株式会社 | 画像形成素子 |
CN108475712A (zh) * | 2015-12-01 | 2018-08-31 | 夏普株式会社 | 图像形成元件 |
US11114423B2 (en) | 2015-12-01 | 2021-09-07 | Sharp Kabushiki Kaisha | Image-forming element |
JP2021101243A (ja) * | 2015-12-01 | 2021-07-08 | シャープ株式会社 | 画像形成素子、及び製造方法 |
JP2020074005A (ja) * | 2015-12-01 | 2020-05-14 | シャープ株式会社 | 画像形成素子、及び製造方法 |
JPWO2017094461A1 (ja) * | 2015-12-01 | 2018-06-28 | シャープ株式会社 | 画像形成素子 |
JP2017175118A (ja) * | 2016-02-05 | 2017-09-28 | マブン オプトロニックス カンパニー リミテッドMaven Optronics Co., Ltd. | ビーム成形構造体を備えた発光素子およびその製造方法 |
US10797209B2 (en) | 2016-02-05 | 2020-10-06 | Maven Optronics Co., Ltd. | Light emitting device with beam shaping structure and manufacturing method of the same |
JP2017168494A (ja) * | 2016-03-14 | 2017-09-21 | 日亜化学工業株式会社 | 発光装置の製造方法 |
US10825968B2 (en) | 2016-04-06 | 2020-11-03 | Nichia Corporation | Method for manufacturing light-emitting device |
JP2018018979A (ja) * | 2016-07-28 | 2018-02-01 | 日亜化学工業株式会社 | 発光装置の製造方法 |
JP2018078282A (ja) * | 2016-10-12 | 2018-05-17 | 億光電子工業股▲ふん▼有限公司Everlight Electronics Co.,Ltd. | 発光デバイスおよびledパッケージ構造 |
US10580932B2 (en) | 2016-12-21 | 2020-03-03 | Nichia Corporation | Method for manufacturing light-emitting device |
JP2018139285A (ja) * | 2016-12-21 | 2018-09-06 | 日亜化学工業株式会社 | 発光装置の製造方法 |
JP2018101753A (ja) * | 2016-12-21 | 2018-06-28 | 日亜化学工業株式会社 | 発光装置 |
US10811560B2 (en) | 2016-12-21 | 2020-10-20 | Nichia Corporation | Method for manufacturing light-emitting device |
JP2017120929A (ja) * | 2017-03-27 | 2017-07-06 | 日亜化学工業株式会社 | 発光装置 |
JP2021093533A (ja) * | 2017-05-30 | 2021-06-17 | シャープ株式会社 | 半導体モジュール、表示装置、および半導体モジュールの製造方法 |
TWI771424B (zh) * | 2017-05-30 | 2022-07-21 | 日商夏普股份有限公司 | 半導體模組、顯示裝置、以及半導體模組的製造方法 |
JPWO2018220932A1 (ja) * | 2017-05-30 | 2020-04-02 | シャープ株式会社 | 半導体モジュール、表示装置、および半導体モジュールの製造方法。 |
WO2018220932A1 (ja) * | 2017-05-30 | 2018-12-06 | シャープ株式会社 | 半導体モジュール、表示装置、および半導体モジュールの製造方法。 |
JP7093432B2 (ja) | 2017-05-30 | 2022-06-29 | シャープ株式会社 | 半導体モジュール、表示装置、および半導体モジュールの製造方法 |
JP2018050082A (ja) * | 2017-12-28 | 2018-03-29 | 日亜化学工業株式会社 | 発光装置及び発光装置の製造方法 |
JP2018117138A (ja) * | 2018-03-01 | 2018-07-26 | 日亜化学工業株式会社 | 発光装置の製造方法 |
JP7115888B2 (ja) | 2018-04-02 | 2022-08-09 | 日本特殊陶業株式会社 | 光波長変換部材及び発光装置 |
JP2019184644A (ja) * | 2018-04-02 | 2019-10-24 | 日本特殊陶業株式会社 | 光波長変換部材及び発光装置 |
JP7178820B2 (ja) | 2018-08-09 | 2022-11-28 | シチズン時計株式会社 | Led発光装置 |
JP2020027814A (ja) * | 2018-08-09 | 2020-02-20 | シチズン時計株式会社 | Led発光装置 |
JP2018182352A (ja) * | 2018-08-27 | 2018-11-15 | 日亜化学工業株式会社 | 発光装置 |
JP2019054248A (ja) * | 2018-09-19 | 2019-04-04 | 日亜化学工業株式会社 | 発光装置 |
JP2019062218A (ja) * | 2018-12-05 | 2019-04-18 | 日亜化学工業株式会社 | 発光装置の製造方法 |
US11002427B2 (en) | 2019-03-28 | 2021-05-11 | Nichia Corporation | Light emitting device |
US11313536B2 (en) | 2019-03-28 | 2022-04-26 | Nichia Corporation | Light emitting device |
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JP2022078308A (ja) * | 2020-12-03 | 2022-05-24 | 日亜化学工業株式会社 | 発光装置 |
WO2022264849A1 (ja) * | 2021-06-18 | 2022-12-22 | スタンレー電気株式会社 | 発光装置 |
WO2022264850A1 (ja) * | 2021-06-18 | 2022-12-22 | スタンレー電気株式会社 | 発光装置 |
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EP2216834A1 (en) | 2010-08-11 |
US20100320479A1 (en) | 2010-12-23 |
RU2010126475A (ru) | 2012-01-10 |
US20180069164A1 (en) | 2018-03-08 |
CN101878540A (zh) | 2010-11-03 |
RU2489774C2 (ru) | 2013-08-10 |
KR101517644B1 (ko) | 2015-05-04 |
TW200947755A (en) | 2009-11-16 |
CN101878540B (zh) | 2013-11-06 |
US20230343909A1 (en) | 2023-10-26 |
US9853194B2 (en) | 2017-12-26 |
US9024340B2 (en) | 2015-05-05 |
TWI501431B (zh) | 2015-09-21 |
US11735699B2 (en) | 2023-08-22 |
US11257996B2 (en) | 2022-02-22 |
KR20100091992A (ko) | 2010-08-19 |
EP2216834B1 (en) | 2017-03-15 |
US20150287896A1 (en) | 2015-10-08 |
US20220140212A1 (en) | 2022-05-05 |
JP5526782B2 (ja) | 2014-06-18 |
US20200098960A1 (en) | 2020-03-26 |
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JPWO2009069671A1 (ja) | 2011-04-14 |
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