CN110137332A - 发光二极管封装结构 - Google Patents
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- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
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- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
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Abstract
一种发光二极管封装结构包含一基板、至少一个发光二极管晶片、一反射材以及一荧光转换材层。发光二极管晶片固定于基板上。反射材环绕发光二极管晶片的周围。荧光转换材层设置于发光二极管晶片上,一沟槽位于荧光转换材层与反射材之间,且连通发光二极管封装结构的两侧。上述沟槽作为荧光转换材层与反射材之间热膨胀系数差异的缓冲空间,使两者不会挤压到彼此造成封装结构的损坏。
Description
技术领域
本发明是关于一种发光二极管封装结构。
背景技术
已知车用发光二极管前灯的封装结构,部分产品由于单位面积的发光强度过高,故在光电转换材料上,多采用无机烧结技术,将荧光粉材制作成陶瓷荧光片,藉以解决荧光层的硅胶材料热裂解问题。
然而,陶瓷荧光片虽解决热裂解问题,也伴随出现其他副作用。当荧光粉材与接触的反射材料膨胀系数差异过大时,在长时间点亮或温差过大的状态下,四周的反射材料会由于膨胀进而挤压荧光粉材,导荧光粉材破损而产生剥落的现象,进而造成车灯模组出现严重色晕现象。
发明内容
本发明提出一种创新的发光二极管封装结构,解决先前技术的问题。
于本发明的一实施例中,一种发光二极管封装结构包含一基板、至少一个发光二极管晶片、一反射材以及一荧光转换材层。发光二极管晶片固定于基板上。反射材环绕发光二极管晶片的周围。荧光转换材层设置于发光二极管晶片上,一沟槽位于荧光转换材层与反射材之间,且连通发光二极管封装结构的两侧。
于本发明的一实施例中,反射材与荧光转换材层的热膨胀系数是不相同的。
于本发明的一实施例中,沟槽的宽度范围从0.05毫米到0.5毫米。
于本发明的一实施例中,沟槽位于荧光转换材层的每一边与反射材之间。
于本发明的一实施例中,任两相邻的沟槽相交于该荧光转换材层的角落。
于本发明的一实施例中,任两相对的沟槽彼此平行。
于本发明的一实施例中,发光二极管晶片是以覆晶方式电性连接至于基板上。
于本发明的一实施例中,发光二极管晶片是以打线方式电性连接至基板上。
于本发明的一实施例中,该用以打线方式的一导线是部分埋设于该反射材内。
于本发明的一实施例中,荧光转换材层的顶面与反射材的顶面彼此平齐。
综上所述,本发明的发光二极管封装结构,利用荧光转换材层与反射材之间的沟槽,作为荧光转换材层与反射材之间热膨胀系数差异的缓冲空间,使两者不会挤压到彼此造成封装结构的损坏。沟槽的厚度可依需求控制而不影响出光光型,以同时具有提升发光效能与耐候性的功效。
以下将以实施方式对上述的说明作详细的描述,并对本发明的技术方案提供更进一步的解释。
附图说明
为让本发明的上述和其他目的、特征、优点与实施例能更明显易懂,所附附图的说明如下:
图1是绘示依照本发明一实施例的一种发光二极管封装结构的立体图;
图2是绘示依照本发明另一实施例的一种发光二极管封装结构的立体图;
图3是绘示图1的发光二极管封装结构的剖面图;以及
图4是绘示图2的发光二极管封装结构的剖面图。
具体实施方式
为了使本发明的叙述更加详尽与完备,可参照所附的附图及以下所述各种实施例,附图中相同的号码代表相同或相似的元件。另一方面,众所周知的元件与步骤并未描述于实施例中,以避免对本发明造成不必要的限制。
请同时参照图1,其绘示依照本发明一实施例的一种发光二极管封装结构的立体图。发光二极管封装结构100a包含一基板101、至少一个发光二极管晶片103(参照图3)、一反射材102以及一荧光转换材层104。反射材102环绕发光二极管晶片103与荧光转换材层104的周围。荧光转换材层104设置于发光二极管晶片103上,且形成沟槽于荧光转换材层104与反射材102之间,且沟槽连通发光二极管封装结构100a的两侧。
在本实施例中,沟槽(106a、106b、106c、106d)位于荧光转换材层104的每一边与反射材102之间。
在本实施例中,任两相邻的沟槽相交于荧光转换材层的角落,例如沟槽106b与沟槽106c相交于荧光转换材层104的角落104e。
在本实施例中,任两相对的沟槽彼此平行,例如沟槽106a与沟槽106b彼此平行,沟槽106c与沟槽106d彼此平行。
上述荧光转换材层104与反射材102之间沟槽设计,是为了解决荧光转换材层104与反射材102之间热膨胀系数差异过大造成的负面状况,而能提升发光效能与耐候性。
请参照图2,其绘示依照本发明另一实施例的一种发光二极管封装结构的立体图。发光二极管封装结构100b与发光二极管封装结构100a的差异在于其荧光转换材层104只有一边与反射材102之间具有沟槽106。因荧光转换材层104与反射材102之间热膨胀系数差异状况不同,只有单一沟槽106亦能具有提升发光效能与耐候性的功效。
在其他实施例中(未绘示于图面),发光二极管封装结构的荧光转换材层的二或三边(并非每一边)与反射材之间具有沟槽设计,亦能具有提升发光效能与耐候性的功效。
请参照图3,其绘示图1的发光二极管封装结构的剖面图。在本实施例中,发光二极管封装结构100a具有二个发光二极管晶片103被反射材102所环绕包覆,且荧光转换材层104位于其顶面。发光二极管晶片103的数量可依需求增减,并不受限于二个。荧光转换材层104内具有荧光粉104a,能受到发光二极管晶片103的量子井发光层103a的发光而激发产生不同波长的光线。
在本实施例中,发光二极管晶片103是以覆晶方式电性连接至于基板101上,即发光二极管晶片103的电极直接焊接至基板101上对应的位置,而无需打线连接。
在本实施例中,荧光转换材层104可以是硅胶荧光层、玻璃烧结荧光层或陶瓷荧光层。
在本实施例中,荧光转换材层104的顶面(即顶发光面104b)与反射材102的顶面102a是平齐的,但并不以此为限。
在本实施例中,基板101可以是陶瓷基板、BT(Bismaleimide Triazine)树脂基板、热固性环氧树酯基板(EMC基板)、蓝宝石基板或金属基层电路板(Metal Core PCB)。
在本实施例中,因荧光转换材层104与反射材102之间具有沟槽,使得荧光转换材层104的顶发光面104b并非唯一发光面,而另增侧发光面104c。
在本实施例中,沟槽的宽度W范围从0.05毫米到0.5毫米,但仍不以此为限。当沟槽的宽度W范围从0.05毫米到0.15毫米时,即使荧光转换材层104另增侧发光面104c,发光二极管封装结构的整体出光光型仍维持不变。沟槽可使用激光、刀切等方式形成,但仍不以此为限。
在本实施例中,反射材102为白色不透光材料,但不以此为限。
请参照图4,其绘示图2的发光二极管封装结构的剖面图。发光二极管封装结构100b不同于发光二极管封装结构100a的地方在于发光二极管晶片105并非以覆晶方式电性连接至于基板101上。发光二极管晶片105其中一电极以打线方式电性连接至基板101,而使导线108部分埋设于反射材102内。在荧光转换材层104靠近发光二极管晶片105打线电极的一边不适合再形成沟槽,以避免损坏导线108或电极。
综上所述,本发明的发光二极管封装结构,利用荧光转换材层与反射材之间的沟槽,作为荧光转换材层与反射材之间热膨胀系数差异的缓冲空间,使两者不会挤压到彼此造成封装结构的损坏。沟槽的厚度可依需求控制而不影响出光光型,以同时具有提升发光效能与耐候性的功效。
虽然本发明已以实施方式揭露如上,然其并非用以限定本发明,任何熟悉此技艺者,于不脱离本发明的精神和范围内,当可作各种的更动与润饰,因此本发明的保护范围当视所附的权利要求书所界定的范围为准。
Claims (10)
1.一种发光二极管封装结构,其特征在于,包含:
一基板;
至少一个发光二极管晶片固定于该基板上;
一反射材,环绕该发光二极管晶片的周围;以及
一荧光转换材层,设置于该发光二极管晶片上,一沟槽位于该荧光转换材层与该反射材之间,且连通该发光二极管封装结构的两侧。
2.根据权利要求1所述的发光二极管封装结构,其特征在于,该反射材与该荧光转换材层的热膨胀系数是不相同的。
3.根据权利要求1所述的发光二极管封装结构,其特征在于,该沟槽的宽度范围从0.05毫米到0.5毫米。
4.根据权利要求1所述的发光二极管封装结构,其特征在于,该沟槽位于该荧光转换材层的每一边与该反射材之间。
5.根据权利要求4所述的发光二极管封装结构,其特征在于,任两相邻的该沟槽相交于该荧光转换材层的角落。
6.根据权利要求4所述的发光二极管封装结构,其特征在于,任两相对的该沟槽彼此平行。
7.根据权利要求1所述的发光二极管封装结构,其特征在于,该至少一个发光二极管晶片是以覆晶方式电性连接至于该基板上。
8.根据权利要求1所述的发光二极管封装结构,其特征在于,该至少一个发光二极管晶片是以打线方式电性连接至该基板上。
9.根据权利要求8所述的发光二极管封装结构,其特征在于,该用以打线方式的一导线是部分埋设于该反射材内。
10.根据权利要求1所述的发光二极管封装结构,其特征在于,该荧光转换材层的顶面与该反射材的顶面彼此平齐。
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CN201810128340.0A CN110137332A (zh) | 2018-02-08 | 2018-02-08 | 发光二极管封装结构 |
US16/209,992 US10763402B2 (en) | 2018-02-08 | 2018-12-05 | Light-emitting diode package |
JP2019006152A JP2019140385A (ja) | 2018-02-08 | 2019-01-17 | 発光ダイオードのパッケージング構造 |
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CN201044522Y (zh) * | 2007-05-17 | 2008-04-02 | 深圳市龙岗区横岗光台电子厂 | 发光二极管封装结构 |
WO2011122529A1 (ja) * | 2010-03-29 | 2011-10-06 | 三洋電機株式会社 | 発光装置及び発光装置モジュール |
WO2014081042A1 (ja) * | 2012-11-26 | 2014-05-30 | シチズン電子株式会社 | 発光装置 |
CN105789144A (zh) * | 2014-12-10 | 2016-07-20 | 矽品精密工业股份有限公司 | 封装结构及其制法 |
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US20190245121A1 (en) | 2019-08-08 |
JP2019140385A (ja) | 2019-08-22 |
US10763402B2 (en) | 2020-09-01 |
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