TWI504029B - 應用於覆晶發光二極體之聚矽氧基反射性底部填充物及熱耦合器 - Google Patents
應用於覆晶發光二極體之聚矽氧基反射性底部填充物及熱耦合器 Download PDFInfo
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- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H01L33/58—Optical field-shaping elements
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- H01L33/64—Heat extraction or cooling elements
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Description
此發明係關於發光二極體(LED),且具體而言,本發明係關於在一LED與一安裝表面之間提供一反射性且導熱底部填充物。
LED通常被安裝於一子基板晶圓上,該子基板晶圓接著被切粒,以分割該等個別LED/子基板。該晶圓之各個子基板部分具有若干頂部電極,該等頂部電極係藉由例如超音波接合而接合至該LED上之若干電極。接著將一底部填充物材料(例如,環氧樹脂或聚矽氧)注入該LED之下方,以提供機械支撐且保護該LED免受污染物之影響。
該子基板亦具有一組更為穩健之電極,該等電極係藉由一金屬圖案而連接至該等LED電極,該等LED電極一般使用習知的焊料回流或其他方式而接合至一印刷電路板(在該子基板晶圓經切粒之後)。
已知在一LED的該底面上提供大反射性金屬電極(諸如銀),使得該LED主動層向下發射之光被該子基板向上反射而非被該子基板吸收。形成此等反射性金屬電極可為複雜。半導體表面之製備,銀鏡之沈積與圖案化以及用防護片囊封以防止金屬混合或污染係一極其複雜及需要小心處理之程序,必須密切監視。
該LED可產生大量熱,且該熱可傳導通過該子基板且進入一散熱片中。大部分之該熱可傳導通過該等LED金屬電
極到達該子基板。聚矽氧及環氧樹脂底部填充物材料係不良熱導體。
需要的是使光自一子基板之表面向上反射且增大自LED移除熱之一更好方式。
本文所描述係用於以一反射性底部填充物形成一覆晶LED之一技術,該底部填充物在LED與子基板之間提供良好的熱傳導。
為了形成LED自身,在一生長基板之上方生長習知的GaN基之層(包括,AlInGaN、InGaN等等)或AlInGaP層。
接著,對於頂部p型層之導電性不良之一GaN基LED而言,舉例而言,可在該p型層之頂面上沈積一透明導電氧化物(TCO)層,該TCO層係ITO層、AZO層、ZnO層、MZO層、GZO層、AMZO層、ZIO層或GMZO層,以幫助傳導電流。亦可使用一透明金層。接著可蝕刻該TCO層、p型層及主動層之若干部分,以暴露n型層之若干分散部分。接著可用例如鋁、Pt或Ti填充開口,以與該n型層電接觸。接著在金屬n接觸件(例如,鋁)上電鍍金支柱,並使該等金支柱具有一高度,使得n電極之最終厚度將約等於最終p電極厚度(下文將論述),例如5微米。
接著,在該p型層上方之該TCO層上圖案化例如反射性銀墊或Pt墊,且用金電鍍該等支柱,以形成金支柱之一高密度陣列,該等金支柱與形成於該鋁上方之該等金支柱具有相同的高度。該等金支柱可具有約50微米或更小之一間
隔且可具有約10微米或更大之一直徑。在一些實施例中,該等金支柱可具有30微米或更小之一間隔且可具有大於10微米之一直徑。
接著將該等LED自該晶圓單一化且安裝於一子基板晶圓之若干金屬電極上。該等子基板電極可為金墊,且可藉由將該等金支柱超音波焊接至該子基板陽極及陰極金墊而安裝該等LED。
製備一聚矽氧基底部填充物。一習知的聚矽氧模製化合物(SMC)包括約80%(以重量計)之二氧化矽,以達成一定的強度。在本發明之一實施例中,用氧化鋁(Al2
O3
)替代二氧化矽(或二氧化矽之一部分),其中氧化鋁係使用一已熟知程序而製備以使氧化鋁粉末在白光下變成白色。此氧化鋁可市購。聚矽氧及二氧化矽之導熱率不佳,而氧化鋁具有更佳之導熱率。含有約70%至80%(按重量計)氧化鋁之聚矽氧將具有良好的導熱率。該SMC含有少量(例如,按重量計,5%-10%)之二氧化鈦(TiO2
)(明亮的白色粉末)以將反射率增加高達96%。包含氧化鋁及TiO2
之該SMC不僅反射光,同時相較先前技術銀鏡電極使反射在一更大程度上隨機化。
可用具有合適反射性質及導熱率之其他材料填充該SMC。反射性質可源於該等材料係白色或具有一相對高之折射率。此一合適高折射率大於聚矽氧之折射率,例如,大於1.5。底部填充物之一總體反射率大於90%係較佳。底部填充物之一合適導熱率係大於20W/m/K。
安裝於該子基板晶圓上之該等LED接著經歷一模製程序,在該模製程序中,含有氧化鋁及選用地含有TiO2
之該SMC在壓力下受壓迫以填充於該等LED與該子基板之間的空隙中。接著固化該SMC,且自模具移除該子基板晶圓。接著移除過量之SMC,諸如自該生長基板之上方移除。
接著可藉由雷射剝離移除該生長基板,而該底部填充物及金支柱為該等薄LED層提供機械支撐。
接著可蝕刻該被暴露之n型層表面,以使該表面粗糙化,以增加光提取。
接著對該子基板晶圓進行切粒,以分離該等個別LED/子基板。
許多金支柱連同該TCO層將電流分佈在該p型層之整個背面上。對於一AlInGaP LED,該TCO層係選用的,且可在該p型層中之若干擴散金屬區域之上方電鍍該等金支柱。用該反射性SMC填充該等支柱之間的間隔,使得來自該主動層之任何向下的光被向上反射且經隨機化以增加光提取。該等支柱之頂部亦向上反射光。增加導熱率之SMC結合許多金支柱,在該LED與該子基板之間提供一良好的導熱路徑。
上文僅為本發明之一實施例,且可使用其他材料。
相同或等效之元件標示有相同的數字。
作為一基本事項,在一生長基板上形成一習知之LED。在所使用之實例中,該LED為一GaN基LED該實諸如一
AlInGaN LED或InGaN LED),以產生藍色光至綠色光。本發明中可使用的其他類型之LED包括AlInGaP LED,該等AlInGaP LED可產生紅色至黃色範圍內之光。
如圖1中所示,對於一典型的GaN LED,使用習知的技術在一藍寶石生長基板12上生長一相對厚之n型GaN層10(n型層10)。該相對厚之n型層10一般包括一低溫成核層及一個或多個額外的層,以提供一低缺陷晶格結構,用於n型包覆層及主動層。在該厚n型層之上方形成一個或多個n型包覆層(圖中展示被包含於該n型層10中),接著係一主動層14、一或多個p型包覆層16以及一更重摻雜之p型接觸層18(以有助於形成一金屬歐姆接觸件)。該等材料之導電性係可反向。
生長該等LED層係如圖12中之步驟101所示。
接著可使該LED退火,以活化該等p型摻雜劑,以增加該等p型層之導電率(步驟102)。
如圖2中所示,在該接觸層18之上方沈積一薄氧化銦錫(ITO)導電層20(或其他TCO層),以幫助在整個該接觸層18上散佈電流(圖12中之步驟103)。厚度在約40奈米至100奈米之間,但寬範圍之厚度亦可接受。沈積ITO層已為所熟知。亦可替代地使用其他類型之透明導電層。該ITO層20一般將吸收與之接觸之波長為約400奈米之LED光中之少於2%者且對於40奈米厚度之該ITO層20之一薄層電阻為約50歐姆/平方。相比而言,該GaN n型層10之薄層電阻為約25歐姆/平方。對於一AlInGaP LED,該ITO沈積步驟係選
用的,因為該p型層導電性更佳。若該p型層導對於該等電極之間的間隔的導電性充分好,則對於一GaN基LED,ITO沈積亦可為選用的。
若需要,接著對該ITO層20進行退火(步驟104)。
如圖3所示,為了使該LED成為一覆晶,可使用反應性離子蝕刻(RIE)選擇性地蝕除ITO層20、p型層18/16及主動層14之若干區域22,以例如暴露該n型層10之若干部分,以進行金屬化(步驟105)。以此方式,p接觸件及n接觸件將位於晶片之相同側且可直接電附著至子基板接觸墊。在具有所展示之組態之一覆晶中,來自n金屬接觸件之電流開始橫向流經n型層。
接著在該等開口之壁上沈積一絕緣層24(例如,氧化矽或氮化矽),以使金屬與p型層及主動層電絕緣。若可蝕刻鋁而避免與p型層及主動層側接觸,則絕緣層係選用的。
如圖4所示,接著在該等開口中濺鍍鋁26(或Al合金),以接觸該n型層10,且使用已熟知之技術移除任何過量之鋁(步驟106)。亦可使用其他合適之金屬。
如圖5中所展示,選擇性地遮罩LED之頂部,且將LED晶圓浸潤於具有一金電極之一電鍍溶液中,且對該鋁加電偏壓(經由該n型層10),以用金電鍍所暴露之鋁,直到形成具有約5微米之高度之金支柱28(步驟107)。其他高度亦為合適的。以金電鍍鋁係一已熟知之程序。可在Al與金之間使用若干合適的障壁層。圖11(下文將詳細討論)展示LED之底面上之金支柱28之合適圖案。在一實施例中,電接觸該
n型層的金支柱28之間的間隔應小於200微米。
如圖6中所示,在待形成用於該p接觸層18之金支柱的該ITO層20之區域之上方形成銀墊30(步驟108)。可藉由濺鍍銀且接著進行一遮罩及蝕刻程序(或可使用一遮罩及剝離程序)而完成銀墊30之形成。亦可使用其他技術。該等銀墊30之間的間隔為小於約50微米,諸如約30微米,且銀墊30之一寬度為約10微米至20微米。使用銀之原因在於其反射率最高,且亦可使用其他較低反射之金屬。
如圖7中所示,對該ITO層20及銀墊30施加電偏壓,同時用金電鍍該等銀墊30(類似於步驟107),以形成高度約等於該等金支柱28之高度之金支柱32(步驟109)。可在銀與金之間使用一障壁層,諸如TiW或TiWN。該等金支柱32之間的間隔係經選擇以使整個該p接觸層18上之電流散布電阻相對低,因為該等高密度金支柱32連同該ITO層20意在替換先前技術之一大銀金屬接觸件。該p接觸層18之整個頂部上之散布電阻應比該n型層10之散布電阻小三分之一。
若LED為一AlInGaP LED,可藉由Au/Zn擴散而直接金屬接觸至p型層,而不使用ITO層,且接著用金電鍍Au/Zn區域,以形成該等金支柱32。此以方式,可避免少量之光被一ITO層吸收。
如圖8中所示,單一化該LED晶圓(步驟110),以分離出該等個別LED,且將該等LED安裝於一子基板晶圓40上(步驟111),該子基板晶圓一般為一陶瓷晶圓。該子基板晶圓40上之金屬電極42及44可延伸穿過該晶圓(通孔係以虛線
展示)且終止於底部接觸墊46中,以焊接至一電路板。在一實施例中,該等金屬電極42及44係金,且LED之金支柱28及32被超音波焊接至該等電極42及44。
製備一新穎的聚矽氧基底部填充物,其具有反射性及良好的導熱率。
導熱率被界定為在穩定狀態條件下,由於存在一單位溫度梯度,傳遞穿過法向於具有單位面積之一表面之一方向上之一單位厚度之熱之量。使用瓦特/米/凱爾文(W/m/K)表示法係表達導熱率之一常見方式,且大多數材料的導熱率係可自參考文獻中輕易獲得。
一習知的聚矽氧模製化合物(SMC)包含約80%(按重量計)二氧化矽粉末,以達成一定的強度。在本發明之一實施例中,用氧化鋁(Al2
O3
)替代二氧化矽(或二氧化矽之一部分),其中氧化鋁係使用一已知的程序而製備以使氧化鋁粉末在白光下變成白色。此氧化鋁粉末係可市購。聚矽氧及二氧化矽導熱率不佳,諸如為1W/m/K,,而氧化鋁具有良好的導熱率,諸如25W/m/K或更高。含有約80%(按重量計)之氧化鋁之聚矽氧將具有約20W/m/K之一導熱率。
可用二氧化鈦(TiO2
)(明亮的白色粉末)來替代一小量(5%至10%(按重量計))之氧化鋁,以將反射率增加高達96%。該SMC之反射率大於約90%則令人滿意。包含氧化鋁及TiO2
之該SMC不僅反射光,而且使反射隨機化。亦可添加黏著促進劑及溶劑至該SMC,以使固化性質及黏性改質。
該SMC之熱膨脹係數可接近該LED之熱膨脹係數,因此,在最壞的情形下(例如,在AuSn或AgSn焊料回焊期間),該SMC之熱膨脹與晶粒之熱膨脹差異很小。
亦可使用除氧化鋁粉末之外的具有較大導熱率之其他粉末。反射性質可源於該等材料係白色或具有一相對高之折射率。此一合適的高折射率大於聚矽氧之折射率,諸如大於1.5。一材料之一合適的導熱率為大於20W/m/K。合適的材料可包括諸如AlN、AlON、硫化鋇、鈦酸鋇、鈦酸鋁、立方氧化鋯、GGG、PLZT、PZT、SiAlON、金剛石、碳化矽、藍寶石、含有重金屬氧化物之某些玻璃、SiON、鈦酸鍶、三氧化鈦、YAG、硒化鋅、硫化鋅、碲化鋅及其等之組合物。平均粒度可為約5微米或更小,包括奈米顆粒。
就發明者所知,一聚矽氧模製化合物(SMC)先前未被使用(除發明者外)作為LED中之底部填充物或被公開揭示為用於LED之底部填充物。在較佳實施例中,使用SMC作為底部填充物係出於以下原因。SMC尤其適用於針對基板上之LED進行晶圓級底部填充物之一模製程序(壓縮模製或轉移模製)中。該SMC開始時(在該模製程序之前)係一固態材料,其可以粉末或片劑形成用於一底部填充物模製程序中,該程序可簡化對該材料之處置。在SMC中之標準填充物為SiO2
,在配方中存在佔約80%至90%(按重量計)。可定製該SMC之組合物,用TiO2
替代一些填充物(SiO2
),以獲得高反射率白色,或用Al2
O3
、金剛石、石墨及其他此類
材料來改良導熱率及/或反射率,同時可以某些組合來改良導熱率及反射率二者。
SMC具有至少優於其他常用的底部填充物材料之四個優點。首先,SMC具有一低揚氏模數且在熱膨脹期間產生對該LED晶粒之低均勻應力。第二,SMC可含有相當多之固態材料,以將熱膨脹係數(CTE)減小至接近普通金屬(例如銅及金)之熱膨脹係數,從而減小在熱循環期間跨該晶粒之應力差。第三,SMC相對於高密度藍光LED及高溫之組合,隨時間流逝極穩定。及第四,SMC具有一極低之玻璃轉化溫度(低於室溫),這意謂著,對於LED燈,在一典型之操作範圍內CTE不發生變化。
相較於任何環氧樹脂或環氧樹脂模製化合物,SMC具有一極低之玻璃轉化溫度(Tg=-10℃)。環氧樹脂模製化合物之最佳樣本之Tg為約Tg=210℃,且對於液態環氧樹脂,約為(150℃-170℃)。通常LED封裝係藉由使用處於某一回焊溫度下之一焊料膏而附著至該電路板。對於不含Pb之焊料,溫度可為自250℃至320℃。在焊料回焊期間,非SMC底部填充物材料自低於其Tg變化至高於其Tg。當回焊溫度達到高於Tg時,聚合物自一固態轉化成一塑化階段,這使得熱膨脹係數(CTE)增加,且因此,使用此等非SMC材料作為底部填充物之LED經歷一明顯的變形。此變形程度大至足以使若干LED組件(諸如晶粒及任何金屬附接件)發生塑性變形。在LED回到室溫之後,塑性變形不會回到其初始狀態,這可能會造成LED之操作可靠性降低之風險。這
對於對底部填充物熱膨脹極敏感之薄膜LED(總裝置厚度為約5微米)尤其會發生,因為熱膨脹極對該等薄膜LED造成致命性損壞(裂化)。由於該SMC的Tg係低於-10℃,且含有固態物之SMC具有一低CTE,SMC底部填充物在到達高於回焊溫度(在回焊期間,不存在自低於Tg轉變至高於Tg)時之熱特性不會顯著改變。因此,該SMC底部填充物不會使經底部填充物之LED結構發生任何顯著變形。
為了詳細說明上文所總結的SMC之優點,使用一SMC之第一優點在於所固化之材料之揚氏模數及體模數(Bulk modulus)相對低,這允許在發光塊上之LED之上方模製SMC之後,可更快速地在LED周圍移除材料,且亦使得在熱膨脹及收縮期間對LED之應力極小。
SMC之第二優點在於其黏性低且與許多填料材料之相容性小。將填料材料(諸如鋁、二氧化矽、金剛石及石墨)添加至聚矽氧,以減小CTE且增添額外性質,諸如反射率及顏色。在需要白色關斷狀態LED顏色及/或填料材料反射率可增加系統效率之系統中使用白色材料。在LED與周圍區域之間的對比度很重要之情形下使用黑色材料,且出於關斷狀態美學與其他目的可使用其他顏色。
使用SMC作為LED之底部填充物之第三優點在於,在存在由藍色LED發射之藍色光子及LED通常暴露之高溫二者之情形下,穩定性極高。其他群組之填料材料在面對高能量時均無法如SMC這般穩定。通常,當使用環氧樹脂底部填充物時,在LED(包括薄膜LED)之周邊發生嚴重的聚合
物劣化。LED之一主要優點在於壽命長,且直到現在,該底部填充物仍尤其是覆晶LED之可靠性方面之關鍵最薄弱環節之一。SMC使覆晶LED到達一個全新的可靠性水準,促成更高溫度之操作及更高電流之操作,此等二者極大地改良了每美元LED流明。
第四優點在於,SMC之低玻璃轉化溫度使對晶粒之壓力極穩定均勻,從而防止發生裂化,裂化係薄LED之可靠性方面存在的最大風險。
因此,使用SMC作為LED之底部填充物,無論是否含有TiO2
或Al2
O3
,皆被視為新穎的,而非無新意。
圖9係子基板晶圓40之一部分之一簡化示意圖,其展示三個LED 50經歷一壓縮模製程序,以用SMC 52(包含氧化鋁且選用地包含TiO2
)填充該等LED 50與該子基板晶圓40之間存在之空隙(步驟112)。可沈積於該模具54壓痕中之該SMC 52可為一液體或一乾燥粉末。若使用一乾燥粉末,則加熱該模具54,以熔化粉末。接著使該子基板晶圓40抵靠該模具54且向下壓迫,以壓縮該SMC 52,使得該SMC 52填充LED之下方所有空隙,且將所有的空氣推出。一般地,模具/晶圓之周邊周圍具有一密封。可使用射出模製來取代壓縮模製,然而射出模製可能會對需要小心處理的金支柱上施加更大之力。
接著取決於所使用之聚矽氧之類型,藉由諸如冷卻、加熱或UV光而固化(硬化)該SMC 52,且自該模具54移除該子基板晶圓40。接著可藉由微珠噴擊移除例如該生長基板
12之上方之過量的SMC 52(步驟113)。
圖10圖解說明該子基板晶圓40上之一完整LED 55經歷一選用的雷射剝離程序,以移除該生長基板12(步驟114)。在一雷射剝離程序中,準分子雷射能量56破壞該n型層10之該表面處之GaN鍵結且所釋放之氣體壓力推動該生長基板12離開該n型層10。在雷射剝離期間具有對該等LED層上的一高壓力,且該等分散金支柱28/32及SMC 52機械地支撐該等LED層。該等LED層之厚度一般小於50微米。該經脫層之生長基板12接著係藉由諸如黏性片而移除。
接著蝕刻所暴露之該n型層10,以移除任何表面損壞且選用地粗糙化該層,以增加光提取(步驟115)。
圖中展示一光射線58係由該LED 55之該主動層14所發射且由於該SMC 52中存在氧化鋁及/或TiO2
顆粒而被以若干散射角大體上向上反射。在被氧化鋁及TiO2
粉末充分反射之前,光實際上可進入該SMC 52一些距離。該等金支柱32之頂部亦將反射光。由該LED 55所產生之熱係經由SMC 52、金支柱28/32及子基板電極42/44而有效地耦合至該子基板晶圓40。
在上文所提供之實例中,該SMC 52之厚度為約5微米且導致該LED 55與該等子基板電極42/44之間的一熱阻為僅0.25K/W。該LED 55之一底面積為約1平方毫米。
當LED陣列被安裝於該子基板晶圓40上時,亦可在該LED陣列上執行其他的晶圓級程序,諸如透鏡之晶圓級模製。亦可在該等LED之上方沈積磷光體,以將該藍色LED
光轉換成白光。
接著對該子基板晶圓40進行切粒,以分離該等個別LED/子基板(步驟116)。圖10可圖解經分離之LED/子基板。接著將該等底部子基板電極46焊接至一金屬核心散熱片電路板。
圖11係一單一LED 55之一背視圖,其展示經由該等金支柱28及鋁而與該n型層10電接觸之若干經蝕除區域。中央區域係該ITO層20形成於該p接觸層18之上方且該等金支柱32分散於該ITO層20之上方之區域。該子基板之表面上之該等金屬電極42/44一般與經暴露之n型層10及p接觸層18在形狀上一致。該等層之導電性係可反向。
該裝置不必為一覆晶且可為一垂直裝置(具有一頂部電極),且金屬支柱接觸該底部n型層或p型層且與具有所揭示之底部填充物之子基板互連。可以一導線接合或絲帶接合而與該晶粒之該頂部電極電接觸。
圖12中之步驟中之許多者係選用的且僅為實例。
雖然已展示並描述了本發明之若干特定實施例,熟悉此項技術者可顯而易見,在不脫離本發明之較寬泛態樣之基礎上,且對本發明做出各種變化及修改,且因此下文之請求項意在將所有此等屬於此發明之真實精神及範圍內之此等變化及修改涵蓋申請專利範圍之範疇內。
10‧‧‧n型GaN層
12‧‧‧藍寶石生長基板
14‧‧‧主動層
16‧‧‧p型包覆層
18‧‧‧p型接觸層
20‧‧‧氧化銦錫層
22‧‧‧區域
24‧‧‧絕緣層
26‧‧‧鋁
28‧‧‧金支柱
30‧‧‧銀墊
32‧‧‧金支柱
40‧‧‧子基板晶圓
42‧‧‧金屬電極/子基板電極
44‧‧‧金屬電極/子基板電極
46‧‧‧底部接觸墊/底部子基板電極
50‧‧‧發光二極體(LED)
52‧‧‧聚矽氧模製化合物(SMC)
54‧‧‧模具
55‧‧‧LED
56‧‧‧準分子雷射能量
58‧‧‧光射線
圖1係圖解一先前技術之晶圓之一小部分之一剖面圖,其中該晶圓上生長有若干LED層;
圖2圖解在用於一GaN LED之p型層之上方沈積之一ITO層;圖3圖解向下蝕穿至n型層且塗佈有一絕緣材料之若干開口;圖4圖解開口被鋁(或其他合適金屬)填充之情形;圖5圖解鋁之電鍍有金之若干部分,以形成具有例如約5微米之高度之支柱;圖6圖解在ITO層之上方被圖案化之銀墊;圖7圖解在銀墊之上方電鍍之若干金支柱,該等金支柱與鋁之上方之金支柱大致上齊平;圖8圖解一LED之一部分在被切粒且安裝於一子基板上之後之情形;圖9係安裝於子基板晶圓上之三個LED之一簡化示意圖,子基板晶圓被浸沒於包含具有良好反射率及導熱率之粉末(例如,氧化鋁粉末及選用地TiO2
粉末)之聚矽氧模製化合物(SMC)中,以壓縮模製底部填充物來填充LED與子基板晶圓之間之空隙;圖10更詳盡地圖解在藉由雷射剝離而移除生長基板時一完整的LED。在雷射剝離期間,模製底部填充物及金支柱支撐LED層;圖11係圖10之LED之一仰視圖,其圖解接觸n型層及p型層之金支柱之圖案;及圖12係指明形成圖10中之結構之程序中所使用之某些步驟之一流程圖。
10‧‧‧n型GaN層
12‧‧‧藍寶石生長基板
14‧‧‧主動層
16‧‧‧p型包覆層
18‧‧‧p型接觸層
20‧‧‧氧化銦錫層
Claims (14)
- 一種發光裝置,其包括:一發光二極體(LED)晶粒,該LED晶粒具有一底面;一子基板(submount),該LED晶粒安裝於該子基板上,該LED晶粒與該子基板之間存在一間隙(gap);該LED晶粒具有電連接至該底面之複數個金屬支柱(posts),沿該LED晶粒之一底面之該等金屬支柱之間存在若干實質上透明之區域,使得由該LED晶粒向下(downward)發射之光在該等金屬支柱之間穿過;及一實質上反射性底部填充物(underfill)材料,其填充該LED晶粒之該底面與該子基板之間的若干空隙(voids),該底部填充物材料包括聚矽氧(silicone)及具有大於20W/m/K之一導熱率之一反射性粉末,該底部填充物材料將來自該LED晶粒之光實質上向上(upward)反射且在該LED晶粒與該子基板之間傳導熱,其中該底部填充物材料對於可見光之一反射率為至少90%,且一導熱率為至少約20W/m/K。
- 如請求項1之裝置,其中該底部填充物材料進一步包括填注有TiO2 之聚矽氧,其中該TiO2 包括超過約5%(按重量計)之該底部填充物材料。
- 如請求項1之裝置,其中該LED晶粒為一覆晶。
- 如請求項1之裝置,其中該反射性粉末包括氧化鋁,其佔該底部填充物材料之至少70%(按重量計)。
- 如請求項1之裝置,其中該等金屬支柱相互間隔少於50 微米。
- 如請求項1之裝置,其中該LED晶粒具有面對該子基板之一p型層,該裝置進一步包括一非半導體實質上透明導電層,其位於該p型層之上方且介於該p型層與該等金屬支柱之間。
- 如請求項1之裝置,其中該LED晶粒具有面對該子基板之一p型層,其中該等金屬支柱為電鍍於該p型層之上方之金支柱。
- 如請求項1之裝置,其中該LED具有面對該子基板之一p型層,該裝置進一步包括:一非半導體實質上透明導電層,其位於該p型層之上方;若干金屬墊,其等沈積於該實質上透明導電層之上方;且其中該等金屬支柱包括電鍍於該等金屬墊之上方之金支柱。
- 如請求項1之裝置,其中該等金屬支柱之長度介於3微米至7微米之間。
- 如請求項1之裝置,其進一步包括電接觸該LED晶粒中之一p型層之一組金屬支柱及電接觸該LED晶粒中之一n型層之另一組金屬支柱。
- 如請求項1之裝置,其中該等金屬支柱之一厚度介於10微米至20微米之間且相互間隔少於50微米。
- 如請求項1之裝置,其中該反射性底部填充物材料漫射 性地反射來自該LED晶粒之光。
- 如請求項1之裝置,其中用於該LED晶粒之一生長基板已被移除。
- 一種發光裝置,其包括:一發光二極體(LED)晶粒,該LED晶粒具有一底面;一子基板,該LED晶粒被安裝於該子基板上,該LED晶粒與該子基板之間存在一間隙;該LED晶粒具有電連接至該底面之複數個金屬支柱,沿該LED晶粒之一底面之該等金屬支柱之間存在若干實質上透明之區域,使得由該LED晶粒向下發射之光在該等金屬支柱之間穿過;及一底部填充物材料,其填充該LED晶粒之該底面與該子基板之間的空隙,該底部填充物材料包括一聚矽氧模製化合物(molding compound),該聚矽氧模製化合物具有低於室溫之一玻璃轉化溫度,其中該底部填充物材料對於可見光之一反射率為至少90%,且一導熱率為至少約20W/m/K。
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Families Citing this family (37)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8207554B2 (en) | 2009-09-11 | 2012-06-26 | Soraa, Inc. | System and method for LED packaging |
US8933644B2 (en) | 2009-09-18 | 2015-01-13 | Soraa, Inc. | LED lamps with improved quality of light |
US9293667B2 (en) | 2010-08-19 | 2016-03-22 | Soraa, Inc. | System and method for selected pump LEDs with multiple phosphors |
US8575642B1 (en) | 2009-10-30 | 2013-11-05 | Soraa, Inc. | Optical devices having reflection mode wavelength material |
US10147850B1 (en) | 2010-02-03 | 2018-12-04 | Soraa, Inc. | System and method for providing color light sources in proximity to predetermined wavelength conversion structures |
US20110215348A1 (en) * | 2010-02-03 | 2011-09-08 | Soraa, Inc. | Reflection Mode Package for Optical Devices Using Gallium and Nitrogen Containing Materials |
US8905588B2 (en) | 2010-02-03 | 2014-12-09 | Sorra, Inc. | System and method for providing color light sources in proximity to predetermined wavelength conversion structures |
KR101150861B1 (ko) * | 2010-08-16 | 2012-06-13 | 한국광기술원 | 멀티셀 구조를 갖는 발광다이오드 및 그 제조방법 |
US8896235B1 (en) | 2010-11-17 | 2014-11-25 | Soraa, Inc. | High temperature LED system using an AC power source |
US8541951B1 (en) | 2010-11-17 | 2013-09-24 | Soraa, Inc. | High temperature LED system using an AC power source |
US8952402B2 (en) | 2011-08-26 | 2015-02-10 | Micron Technology, Inc. | Solid-state radiation transducer devices having flip-chip mounted solid-state radiation transducers and associated systems and methods |
KR101969334B1 (ko) * | 2011-11-16 | 2019-04-17 | 엘지이노텍 주식회사 | 발광 소자 및 이를 구비한 발광 장치 |
TWI606618B (zh) * | 2012-01-03 | 2017-11-21 | Lg伊諾特股份有限公司 | 發光裝置 |
EP2831930B1 (en) * | 2012-03-30 | 2018-09-19 | Lumileds Holding B.V. | Sealed semiconductor light emitting device and method of forming thereof |
WO2013182980A1 (en) * | 2012-06-07 | 2013-12-12 | Koninklijke Philips N.V. | Chip scale light emitting device with metal pillars in a molding compound formed at wafer level |
JP6155827B2 (ja) * | 2013-05-11 | 2017-07-05 | 日亜化学工業株式会社 | 発光装置の製造方法 |
JP6155932B2 (ja) * | 2013-07-19 | 2017-07-05 | 日亜化学工業株式会社 | 発光装置 |
JP2015032740A (ja) * | 2013-08-05 | 2015-02-16 | 豊田合成株式会社 | 発光装置 |
JP6303805B2 (ja) | 2014-05-21 | 2018-04-04 | 日亜化学工業株式会社 | 発光装置及びその製造方法 |
US10197931B2 (en) * | 2014-10-24 | 2019-02-05 | Hp Indigo B.V. | Electrophotographic varnish |
JP6447018B2 (ja) * | 2014-10-31 | 2019-01-09 | 日亜化学工業株式会社 | 発光装置及び発光装置の製造方法 |
DE102015108056A1 (de) | 2015-05-21 | 2016-11-24 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauteil, optoelektronische Anordnung und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils |
US10991861B2 (en) | 2015-10-01 | 2021-04-27 | Cree, Inc. | Low optical loss flip chip solid state lighting device |
CN105280781B (zh) * | 2015-10-30 | 2018-08-31 | 广东晶科电子股份有限公司 | 一种倒装白光led器件及其制作方法 |
WO2018223391A1 (en) * | 2017-06-09 | 2018-12-13 | Goertek. Inc | Micro-led array transfer method, manufacturing method and display device |
CN107437542B (zh) * | 2017-07-31 | 2023-05-05 | 广东工业大学 | 一种紫外led芯片及其制备方法 |
TWI705585B (zh) * | 2017-09-25 | 2020-09-21 | 致伸科技股份有限公司 | 光源模組 |
US11031527B2 (en) | 2018-01-29 | 2021-06-08 | Creeled, Inc. | Reflective layers for light-emitting diodes |
US11387389B2 (en) | 2018-01-29 | 2022-07-12 | Creeled, Inc. | Reflective layers for light-emitting diodes |
US11923481B2 (en) | 2018-01-29 | 2024-03-05 | Creeled, Inc. | Reflective layers for light-emitting diodes |
US10879441B2 (en) | 2018-12-17 | 2020-12-29 | Cree, Inc. | Interconnects for light emitting diode chips |
US10985294B2 (en) | 2019-03-19 | 2021-04-20 | Creeled, Inc. | Contact structures for light emitting diode chips |
US11094848B2 (en) | 2019-08-16 | 2021-08-17 | Creeled, Inc. | Light-emitting diode chip structures |
USD933872S1 (en) | 2020-03-16 | 2021-10-19 | Hgci, Inc. | Light fixture |
USD933881S1 (en) | 2020-03-16 | 2021-10-19 | Hgci, Inc. | Light fixture having heat sink |
US11032976B1 (en) | 2020-03-16 | 2021-06-15 | Hgci, Inc. | Light fixture for indoor grow application and components thereof |
CN112968094B (zh) * | 2020-07-13 | 2022-03-01 | 重庆康佳光电技术研究院有限公司 | 一种倒装led芯片及其制备方法、显示面板 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006169395A (ja) * | 2004-12-16 | 2006-06-29 | Nagase Chemtex Corp | アンダーフィル樹脂組成物 |
JP2007019096A (ja) * | 2005-07-05 | 2007-01-25 | Toyoda Gosei Co Ltd | 発光装置及びその製造方法 |
TW200717862A (en) * | 2005-06-09 | 2007-05-01 | Philips Lumileds Lighting Co | Method of removing the growth substrate of a semiconductor light-emitting device |
US7285431B2 (en) * | 2004-09-30 | 2007-10-23 | Institute Of Semiconductors, Chinese Academy Of Sciences | Method for manufacturing a GaN based LED of a black hole structure |
WO2009069671A1 (ja) * | 2007-11-29 | 2009-06-04 | Nichia Corporation | 発光装置及びその製造方法 |
TW200931686A (en) * | 2007-11-01 | 2009-07-16 | Panasonic Corp | Semiconductor light emitting element and semiconductor light emitting device using the same |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6878973B2 (en) | 2001-08-23 | 2005-04-12 | Lumileds Lighting U.S., Llc | Reduction of contamination of light emitting devices |
JP4359201B2 (ja) * | 2004-07-26 | 2009-11-04 | シャープ株式会社 | 光半導体装置、光コネクタおよび電子機器 |
US7125734B2 (en) * | 2005-03-09 | 2006-10-24 | Gelcore, Llc | Increased light extraction from a nitride LED |
CN101028228A (zh) * | 2006-03-01 | 2007-09-05 | 通用电气公司 | 含有亚微粒氮化硼颗粒的化妆品组合物 |
EP2135302A2 (en) | 2007-03-08 | 2009-12-23 | Sensors For Medicine And Science, Inc. | Light emitting diode for harsh environments |
US7791093B2 (en) | 2007-09-04 | 2010-09-07 | Koninklijke Philips Electronics N.V. | LED with particles in encapsulant for increased light extraction and non-yellow off-state color |
US7687810B2 (en) | 2007-10-22 | 2010-03-30 | Philips Lumileds Lighting Company, Llc | Robust LED structure for substrate lift-off |
US20090230409A1 (en) | 2008-03-17 | 2009-09-17 | Philips Lumileds Lighting Company, Llc | Underfill process for flip-chip leds |
-
2009
- 2009-11-06 US US12/613,924 patent/US8471280B2/en active Active
-
2010
- 2010-10-11 KR KR1020127014585A patent/KR101833786B1/ko active IP Right Grant
- 2010-10-11 JP JP2012535971A patent/JP2013510422A/ja active Pending
- 2010-10-11 EP EP10779582.5A patent/EP2497126B1/en active Active
- 2010-10-11 CN CN201080050070.8A patent/CN102971877B/zh active Active
- 2010-10-11 WO PCT/IB2010/054588 patent/WO2011055249A2/en active Application Filing
- 2010-10-14 TW TW099135109A patent/TWI504029B/zh active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7285431B2 (en) * | 2004-09-30 | 2007-10-23 | Institute Of Semiconductors, Chinese Academy Of Sciences | Method for manufacturing a GaN based LED of a black hole structure |
JP2006169395A (ja) * | 2004-12-16 | 2006-06-29 | Nagase Chemtex Corp | アンダーフィル樹脂組成物 |
TW200717862A (en) * | 2005-06-09 | 2007-05-01 | Philips Lumileds Lighting Co | Method of removing the growth substrate of a semiconductor light-emitting device |
JP2007019096A (ja) * | 2005-07-05 | 2007-01-25 | Toyoda Gosei Co Ltd | 発光装置及びその製造方法 |
TW200931686A (en) * | 2007-11-01 | 2009-07-16 | Panasonic Corp | Semiconductor light emitting element and semiconductor light emitting device using the same |
WO2009069671A1 (ja) * | 2007-11-29 | 2009-06-04 | Nichia Corporation | 発光装置及びその製造方法 |
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