JP7203060B2 - 発光デバイス - Google Patents
発光デバイス Download PDFInfo
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- JP7203060B2 JP7203060B2 JP2020030015A JP2020030015A JP7203060B2 JP 7203060 B2 JP7203060 B2 JP 7203060B2 JP 2020030015 A JP2020030015 A JP 2020030015A JP 2020030015 A JP2020030015 A JP 2020030015A JP 7203060 B2 JP7203060 B2 JP 7203060B2
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- 239000000758 substrate Substances 0.000 claims description 23
- 239000000463 material Substances 0.000 claims description 16
- 238000006243 chemical reaction Methods 0.000 claims description 7
- 239000011248 coating agent Substances 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 5
- 238000000605 extraction Methods 0.000 description 31
- 238000000034 method Methods 0.000 description 15
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000002310 reflectometry Methods 0.000 description 5
- 230000008901 benefit Effects 0.000 description 3
- 230000001419 dependent effect Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000003801 milling Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000003252 repetitive effect Effects 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000002860 competitive effect Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
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- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
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- H01L33/50—Wavelength conversion elements
- H01L33/508—Wavelength conversion elements having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer, wavelength conversion layer with a concentration gradient of the wavelength conversion material
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- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
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- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
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- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
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- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H01L2224/732—Location after the connecting process
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- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
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- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
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- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
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Description
(付記1)
発光デバイスであって:
発光素子;及び
前記発光素子の発光面に取り付けられる予め形成された波長変換素子;
を有し、前記予め形成された波長変換素子は、前記波長変換素子の光抽出面に対して垂直でも平行でもない少なくとも1つの反射面を含む、発光デバイス。
(付記2)
前記反射面は、前記波長変換素子の側壁を含む、付記1に記載の発光デバイス。
(付記3)
前記波長変換素子の表面で前記反射面を形成する反射コーティングを含む付記1に記載の発光デバイス。
(付記4)
前記反射面は傾斜した平坦面である、付記1に記載の発光デバイス。
(付記5)
前記反射面は鏡面反射性を有する、付記1に記載の発光デバイス。
(付記6)
当該発光デバイスは、複数の発光素子に対応する複数の発光面を含み、前記波長変換素子は、前記複数の発光素子にわたって延びる単体素子である、付記1に記載の発光デバイス。
(付記7)
前記少なくとも1つの反射面が、少なくとも幾つかの前記発光面の間に位置する複数の反射面のうちの何れかである、付記6に記載の発光デバイス。
(付記8)
前記波長変換素子が少なくとも1つの拡散反射面を含む、付記6に記載の発光デバイス。
(付記9)
前記波長変換素子の前記複数の反射面のうちの少なくとも1つの上に配置される反射コーティングを含む付記6に記載の発光デバイス。
(付記10)
前記複数の反射面の各々が傾斜した平坦面である、付記6に記載の発光デバイス。
(付記11)
発光デバイスであって:
発光素子;及び
前記発光素子の発光面に取り付けられる波長変換素子;
を有し、前記波長変換素子は少なくとも1つの拡散反射面を含む、発光デバイス。
(付記12)
当該発光デバイスは複数の発光素子を含み、前記波長変換素子は前記複数の波長変換素子にわたって延びる単一の素子である、付記11に記載の発光デバイス。
(付記13)
基板であって:
前記基板上の回路トレースに電気的に結合される複数の発光素子;及び
前記複数の発光素子の発光面に取り付けられる複数の予め形成された波長変換素子;
を有し、前記予め形成された波長変換素子の各々が、前記波長変換素子の光抽出面に対して垂直でも平行でもない反射面を含む、基板。
(付記14)
前記反射面が前記波長変換素子の側壁を含む、付記13に記載の基板。
(付記15)
各々の波長変換素子の表面に前記反射面を形成する反射コーティングを含む付記13に記載の基板。
(付記16)
各々の反射面が傾斜した平坦面である、付記13に記載の基板。
(付記17)
前記反射面は、所与の寸法の範囲に及ぶ光抽出領域を提供するように方向付けられ、前記光抽出領域は、所与の寸法の範囲に及ぶ光放出領域より小さい、付記13に記載の基板。
(付記18)
各々の波長変換素子は、1つより多い光放出面に取り付けられる、付記13に記載の基板。
(付記19)
前記反射面は鏡面反射性を有する、付記13に記載の基板。
(付記20)
基板であって:
前記基板上の回路トレースに電気的に結合される複数の発光素子;及び
前記複数の発光素子の発光面に取り付けられる複数の波長変換素子;
を有し、前記波長変換素子の各々が拡散反射面を含む、基板。
(付記21)
各々の波長変換素子は、1つより多い光放出面に取り付けられる、付記20に記載の基板。
(付記22)
方法であって:
基板に発光素子を設けるステップ;及び
前記発光素子の発光面に、予め形成された波長変換素子を取り付けるステップ;
を有し、前記予め形成された波長変換素子は、前記波長変換素子の光抽出面に対して垂直でも平行でもない少なくとも1つの反射面を含む、方法。
(付記23)
前記基板は複数の発光素子を含み、当該方法は、複数の予め形成された波長変換素子を前記発光素子に取り付けるステップを含み、各々の波長変換素子は、1つより多い数の前記発光素子に取り付けられる、付記22に記載の方法。
(付記24)
前記反射面が鏡面反射性を有する、付記22に記載の方法。
(付記25)
方法であって:
基板に発光素子を設けるステップ;及び
前記発光素子の発光面に、予め形成された波長変換素子を取り付けるステップ;
を有し、前記予め形成された波長変換素子は、少なくとも1つの拡散反射面を含む、方法。
(付記26)
各々の波長変換素子は、1つより多い光放出面に取り付けられる、付記25に記載の方法。
Claims (9)
- 発光デバイスであって:
発光面を各々が有する複数の発光素子と、
前記複数の発光素子にわたって延在し且つ前記複数の発光素子の各々に取り付けられた単独の波長変換素子であって、前記複数の発光素子が有する複数の発光面に垂直でも平行でもない複数の反射面を有し、各々の反射面は2つの隣接する発光素子の間に位置し、少なくとも1つの反射面は鏡面反射コーティングを有する、単独の波長変換素子と、
を有し、前記波長変換素子は、前記複数の発光素子のうちの最も外側の発光素子の外端に位置する少なくとも1つの外側反射面を更に有し、前記外側反射面は前記複数の発光面に垂直でも平行でもない、発光デバイス。 - 前記反射面のうちの少なくとも1つは傾斜した平坦面である、請求項1に記載の発光デバイス。
- 前記反射面のうちの少なくとも1つは拡散反射性である、請求項1に記載の発光デバイス。
- 前記反射面の各々は鏡面反射コーティングを含む、請求項1に記載の発光デバイス。
- 前記反射面の各々は傾斜した平坦面である、請求項1に記載の発光デバイス。
- 基板を更に有し、前記複数の発光素子の各々は前記基板上の回路トレースに電気的に結合されている、請求項1に記載の発光デバイス。
- 前記外側反射面は、前記最も外側の発光素子の発光面に対して鈍角を形成するように傾斜した第1部分を有する、請求項1に記載の発光デバイス。
- 前記外側反射面は、前記最も外側の発光素子の方へ傾斜した第2部分を有する、請求項1に記載の発光デバイス。
- 前記複数の発光素子の間に配置された反射材料を更に有する、請求項1に記載の発光デバイス。
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US201361867773P | 2013-08-20 | 2013-08-20 | |
US61/867,773 | 2013-08-20 |
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JP2016535543A Division JP6694815B2 (ja) | 2013-08-20 | 2014-08-12 | 発光デバイス |
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JP2020109849A JP2020109849A (ja) | 2020-07-16 |
JP7203060B2 true JP7203060B2 (ja) | 2023-01-12 |
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JP2016535543A Active JP6694815B2 (ja) | 2013-08-20 | 2014-08-12 | 発光デバイス |
JP2020030015A Active JP7203060B2 (ja) | 2013-08-20 | 2020-02-26 | 発光デバイス |
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US (2) | US10109774B2 (ja) |
EP (1) | EP3036777B1 (ja) |
JP (2) | JP6694815B2 (ja) |
KR (1) | KR102231532B1 (ja) |
CN (1) | CN105453282B (ja) |
WO (1) | WO2015025247A1 (ja) |
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CN104916760A (zh) * | 2015-05-08 | 2015-09-16 | 李峰 | 一种胶膜模腔式制作方法及其制成的胶膜 |
US10763404B2 (en) | 2015-10-05 | 2020-09-01 | Maven Optronics Co., Ltd. | Light emitting device with beveled reflector and manufacturing method of the same |
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EP3036777A1 (en) | 2016-06-29 |
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WO2015025247A1 (en) | 2015-02-26 |
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KR102231532B1 (ko) | 2021-03-24 |
EP3036777B1 (en) | 2020-03-11 |
CN105453282A (zh) | 2016-03-30 |
US11171266B2 (en) | 2021-11-09 |
US20190067534A1 (en) | 2019-02-28 |
US10109774B2 (en) | 2018-10-23 |
JP2020109849A (ja) | 2020-07-16 |
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US20160190401A1 (en) | 2016-06-30 |
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