JP2018078282A - 発光デバイスおよびledパッケージ構造 - Google Patents
発光デバイスおよびledパッケージ構造 Download PDFInfo
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- 239000000758 substrate Substances 0.000 claims abstract description 61
- 230000002093 peripheral effect Effects 0.000 claims abstract description 16
- 239000000463 material Substances 0.000 claims description 25
- 238000000926 separation method Methods 0.000 claims description 24
- 239000000853 adhesive Substances 0.000 claims description 16
- 230000001070 adhesive effect Effects 0.000 claims description 16
- 238000007789 sealing Methods 0.000 description 17
- 239000000843 powder Substances 0.000 description 12
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 11
- 229910052712 strontium Inorganic materials 0.000 description 10
- 229910052791 calcium Inorganic materials 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 239000003086 colorant Substances 0.000 description 7
- 239000000203 mixture Substances 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 239000011159 matrix material Substances 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 5
- 229910052733 gallium Inorganic materials 0.000 description 5
- 238000000465 moulding Methods 0.000 description 5
- 102100032047 Alsin Human genes 0.000 description 4
- 101710187109 Alsin Proteins 0.000 description 4
- 229910017639 MgSi Inorganic materials 0.000 description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 4
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 229910052788 barium Inorganic materials 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229910052727 yttrium Inorganic materials 0.000 description 3
- 229910052582 BN Inorganic materials 0.000 description 2
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 2
- 229910052688 Gadolinium Inorganic materials 0.000 description 2
- 101100476480 Mus musculus S100a8 gene Proteins 0.000 description 2
- 229910004283 SiO 4 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910003668 SrAl Inorganic materials 0.000 description 2
- 229910008484 TiSi Inorganic materials 0.000 description 2
- 229910052770 Uranium Inorganic materials 0.000 description 2
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 229920006336 epoxy molding compound Polymers 0.000 description 2
- 239000002223 garnet Substances 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 239000004408 titanium dioxide Substances 0.000 description 2
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 description 2
- 229910015999 BaAl Inorganic materials 0.000 description 1
- 229910016066 BaSi Inorganic materials 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 229910010093 LiAlO Inorganic materials 0.000 description 1
- 229910012506 LiSi Inorganic materials 0.000 description 1
- 229910020068 MgAl Inorganic materials 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- 229910052772 Samarium Inorganic materials 0.000 description 1
- 229910003564 SiAlON Inorganic materials 0.000 description 1
- 229910052771 Terbium Inorganic materials 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 239000000383 hazardous chemical Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- 238000009877 rendering Methods 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000007592 spray painting technique Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
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- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
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Abstract
Description
Claims (20)
- 複数の電極パッドを有する基板と、
前記基板上に配置された複数の発光ユニットと、
前記基板上に配置され、前記複数の発光ユニットの各々の側面を覆うシール部材と
を備え、
前記複数の発光ユニットの各々は、発光ダイオード(LED)チップを有し、前記発光ダイオード(LED)チップは、前記複数の電極パッドに電気的に接続され、
前記シール部材は、周囲部分および分離部分を有し、前記周囲部分は、前記複数の発光ユニットを囲み、前記分離部分は、前記複数の発光ユニットの間に配置される、
発光デバイス。 - 前記複数の発光ユニットの各々は、前記発光ダイオード(LED)チップのうちの対応する1つの上方に配置された蛍光層を有する、請求項1に記載の発光デバイス。
- 前記複数の発光ユニットのうちの1つは、前記発光ダイオード(LED)チップのうちの対応する1つの上方に配置された蛍光層を有する、請求項1に記載の発光デバイス。
- 前記蛍光層の各々または前記蛍光層は、蛍光接着パッチである、請求項2または3に記載の発光デバイス。
- 前記シール部材は、前記複数の発光ユニットのうちの1つの上面を部分的に覆う、請求項1から3のいずれか一項に記載の発光デバイス。
- 前記複数の発光ユニットの各々は、出射光を発するよう適合され、前記複数の発光ユニットの前記出射光は、波長または色温度が変わる、請求項1から3のいずれか一項に記載の発光デバイス。
- 前記シール部材は、反射性物質をさらに有し、故に反射性部品として機能する、請求項1から3のいずれか一項に記載の発光デバイス。
- 前記複数の電極パッドのうちの1つは、前記発光ダイオード(LED)チップの各々の電極に電気的に接続される、請求項1から3のいずれか一項に記載の発光デバイス。
- 前記シール部材は、前記複数の発光ユニットのうちの1つの上面よりも高いか、または同じ高さの上面を有する、請求項1から3のいずれか一項に記載の発光デバイス。
- 前記シール部材は、前記蛍光層の、または前記蛍光層の厚さの15%以下の距離だけ前記複数の発光ユニットのうちの1つの上面から離間している上面を有する、請求項2または3に記載の発光デバイス。
- 前記シール部材の前記分離部分は、前記発光ダイオード(LED)チップの高さの半分よりも大きい厚さを有する、請求項1から3のいずれか一項に記載の発光デバイス。
- 前記シール部材の前記分離部分は、凸上面を含み、前記シール部材の前記周囲部分は、凹上面を含む、請求項2または3に記載の発光デバイス。
- 前記凸上面と前記凹上面とは、前記蛍光層の、または前記蛍光層の厚さの方向において、前記蛍光層の、または前記蛍光層の前記厚さの15%以下の距離だけ離間している、請求項12に記載の発光デバイス。
- 前記基板上に配置され、前記複数の電極パッドに電気的に接続され、かつ、前記シール部材により覆われる帯電防止要素をさらに備える、請求項1から3のいずれか一項に記載の発光デバイス。
- 前記複数の発光ユニットのうちの2つの各々は、中心位置を有し、
前記帯電防止要素は、中心位置を有し、
2つの前記発光ユニットの各々の前記中心位置は、第1距離だけ前記帯電防止要素の前記中心位置から離間しており、
2つの前記発光ユニットの前記中心位置は、前記第1距離よりも長いか、または前記第1距離と等しい第2距離だけ互いに離間している、
請求項14に記載の発光デバイス。 - 前記複数の発光ユニットのうちの2つの各々は、中心位置を有し、
前記帯電防止要素は、中心位置を有し、
2つの前記発光ユニットの各々の前記中心位置は、第1距離だけ前記帯電防止要素の前記中心位置から離間しており、
2つの前記発光ユニットの前記中心位置は、第2距離だけ互いに離間しており、
前記第1距離および前記第2距離の少なくとも一方は、前記周囲部分の側面の長さの半分以下である、
請求項14に記載の発光デバイス。 - 複数の電極パッドを有する基板と、
前記基板上に配置され、第1発光ユニットと、第2発光ユニットと、第3発光ユニットと、第4発光ユニットとを有する複数の発光ユニットと、
前記基板上に配置され、前記第1発光ユニットから前記第4発光ユニットの各々の側面を覆うシール部材と
を備え、
前記第1発光ユニットから前記第4発光ユニットの各々は、発光ダイオード(LED)チップを含み、前記発光ダイオード(LED)チップは、前記複数の電極パッドに電気的に接続され、
前記シール部材は、周囲部分および分離部分を含み、前記周囲部分は、前記第1発光ユニットから前記第4発光ユニットを囲み、前記分離部分は、前記第1発光ユニットから前記第4発光ユニットの間に配置される、
発光ダイオード(LED)パッケージ構造。 - 前記第1発光ユニットから前記第4発光ユニットの各々は、中心位置を有し、
前記第1発光ユニットの前記中心位置は、第1距離だけ前記第4発光ユニットの前記中心位置から離間しており、かつ、第2距離だけ前記第2発光ユニットまたは前記第3発光ユニットの前記中心位置から離間しており、
前記第1距離は、前記第2距離よりも長い、
請求項17に記載のLEDパッケージ構造。 - 前記第1発光ユニットは、青色出射光を発するよう適合され、
前記第4発光ユニットは、白色出射光を発するよう適合される、
請求項17または18に記載のLEDパッケージ構造。 - 前記分離部分は、前記第1発光ユニットと前記第4発光ユニットとの間にある、反射性物質を含む部分を含む、
請求項17または18に記載のLEDパッケージ構造。
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
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US201662407484P | 2016-10-12 | 2016-10-12 | |
US62/407,484 | 2016-10-12 | ||
US201762462926P | 2017-02-24 | 2017-02-24 | |
US62/462,926 | 2017-02-24 |
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JP2018078282A true JP2018078282A (ja) | 2018-05-17 |
JP6692783B2 JP6692783B2 (ja) | 2020-05-13 |
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US (1) | US10588184B2 (ja) |
EP (1) | EP3309832A1 (ja) |
JP (1) | JP6692783B2 (ja) |
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JP6692783B2 (ja) | 2020-05-13 |
KR20180040508A (ko) | 2018-04-20 |
US20180103513A1 (en) | 2018-04-12 |
TWI662723B (zh) | 2019-06-11 |
CN107946441A (zh) | 2018-04-20 |
US10588184B2 (en) | 2020-03-10 |
KR102171233B1 (ko) | 2020-10-29 |
TW201814923A (zh) | 2018-04-16 |
EP3309832A1 (en) | 2018-04-18 |
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