TWI771424B - 半導體模組、顯示裝置、以及半導體模組的製造方法 - Google Patents

半導體模組、顯示裝置、以及半導體模組的製造方法 Download PDF

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TWI771424B
TWI771424B TW107118200A TW107118200A TWI771424B TW I771424 B TWI771424 B TW I771424B TW 107118200 A TW107118200 A TW 107118200A TW 107118200 A TW107118200 A TW 107118200A TW I771424 B TWI771424 B TW I771424B
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light
resin
substrate
emitting
semiconductor module
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TW107118200A
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TW201909453A (zh
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東坂浩由
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日商夏普股份有限公司
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    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
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    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
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Abstract

樹脂(16)被覆藍色LED(15)的側面及背面，且將藍色LED(15)保持水平。電極(14)設置於配線基板(11)的表面與藍色LED(15)的背面之間，貫通樹脂(16)，且電連接配線基板(11)與藍色LED(15)。藍色LED(15)的光出射面(表面)(151)自樹脂(16)露出，將光出射面(表面)(151)與樹脂(16)的表面(161)配置於同一平面。

Description

半導體模組、顯示裝置、以及半導體模組的製造方法
本發明係關於半導體模組、顯示裝置、以及半導體模組的製造方法。
專利文獻1~3揭示有習知的發光裝置的一例。
專利文獻1：日本公開專利公報「特開2015-126209號(2015年7月6日公開)」
專利文獻2：日本專利公報「專利5526782號(2014年4月26日登錄)」
專利文獻3：日本公表專利公報「特表2012-503876號(2012年2月9日公開)」
上述習知的各發光裝置中，存在無法使發光片段(segment)精細化的課題。
本發明是為了解決前述課題而完成，其目的在於使發光片段精細化。
本發明的一態樣的半導體模組為了解決上述課題，其特徵在於，包括：基板；發光晶片，其搭載於該基板上；樹脂，其被覆該發光晶片的側面及背面，且將該發光晶片保持水平；以及電極材，其設置於該基板的表面與該發光晶片的該背面之間，貫通該樹脂，且電連接該基板與該發光晶片；該發光晶片的光出射面(表面)成為自該樹脂露出，將該光出射面(表面)與該樹脂的表面配置於同一平面。
本發明的另一態樣的半導體模組為了解決上述課題，其特徵在於，包括：基板；複數個發光晶片，其並列搭載於該基板上；樹脂，其被覆該複數個發光晶片的側面及背面，且將該複數個發光晶片保持水平；以及電極材，其設置於該基板的表面與該複數個發光晶片的該背面之間，貫通該樹脂，且電連接該基板與該複數個發光晶片；該複數個發光晶片的光出射面(表面)成為自該樹脂露出，將該光出射面(表面)與該樹脂的表面配置於同一平面。
根據本發明的一態樣，發揮可使發光片段精細化的效果。
1:半導體模組
11:配線基板
12:金屬配線
13:絕緣層
14:電極
16:樹脂
17:固定力
18:成長基板
19:分離槽
31:紅螢光體
32:綠螢光體
33:透光性質樹脂
41:部分區域
42:中心點
43:發光範圍
51:曲線
141:基板側電極(第一部分)
142:LED側電極(第二部分)
151:光出射面
161:表面
162:白色系樹脂
163:黑色系樹脂
圖1係表示本發明之實施形態1的半導體模組之截面構成的截面圖。
圖2係說明本發明之實施形態1的半導體模組之製造方法的圖。
圖3係表示本發明之實施形態2的半導體模組之截面構成的截面圖。
圖4係表示本發明之實施形態3的半導體模組之截面構成的截面圖。
圖5係表示本發明之實施形態4的半導體模組之截面構成的截面圖。
圖6係說明藉由本發明之實施形態4的半導體模組發揮的效果的圖。
圖7係表示本發明之實施形態5的半導體模組之截面構成的截面圖。
〔實施形態1〕
參照圖1及圖2，針對本發明的實施形態1於以下進行說明。
(半導體模組1的構成)
圖1係表示本發明之實施形態1的半導體模組1之截面構成的截面圖。如該圖所示，半導體模組1包括配線基板11、金屬配線12、絕緣層13、電極14、藍色LED15、以及樹脂16。
半導體模組1例如為被組入於頭戴式顯示器等小型顯示裝置中的發光裝置。半導體模組1中，在相當於習知一般的顯示裝置的各像素之處，配置有個別的藍色LED15。半導體模組1藉由控制藍色LED15各自的點亮及熄滅，而有助於顯示裝置的資訊之顯示。
半導體模組1中，較佳為將各個藍色LED15縮小，並且以密集的狀態配置的布局(lay out)。藉此，可提升顯示畫面的解析度。本技術為可應用於俯視時各個藍色LED15的大小為縱寬及橫寬為20μm以下，更佳為數μm至十幾μm的製品之技術。
(配線基板11)
配線基板11可利用以至少其表面可與藍色LED15連接的方式形成配線者。配線基板11的材料，可使用基板整體以氮化鋁構成之氮化鋁的單晶體、多晶體等之結晶性基板甚而燒結基板、作為其他材料的氧化鋁等之陶瓷、玻璃、Si等之半導體或金屬基板，或是於該等的表面形成氮化鋁薄膜層之基板等、積層體、複合體。金屬性基板、陶瓷基板由於散熱性高，故較佳。
例如，使用藉由集成電路形成技術於Si上形成控制LED的發光之電路的基板，藉此可製造使細微的LED密集之高解析度的顯示裝置。
(金屬配線)
金屬配線12為至少包含對藍色LED15供給控制電壓的控制電路之配線。金屬配線12之形成，是藉由蝕刻法等實施金屬層的圖案化。例如，可舉出於Si基板表面上形成由Al或Cu等構成之金屬配線12等的例子。進而，也可以保護金屬配線12為目的，於基板的形成了金屬配線12之側的表面形成由SiO2等薄膜構成之保護膜。
(絕緣層13)
絕緣層13是由氧化膜層及/或樹脂層構成的、絕緣性的層。絕緣層13防止配線基板11與電極14直接接觸。
(電極14)
電極14作為電連接金屬配線12及被設於藍色LED15的表面的金屬端子(未圖示)之墊(pad)電極而發揮功能，也被稱為凸塊(bump)。電極14中連接於金屬配線12的第一部分為基板側電極141，電極14中連接於被設在藍色LED15的表面之金屬端子(未圖示)的第二部分為LED側電極142。基板側電極141及LED側電極142例如由Au、Pt、Pd、Rh、Ni、W、Mo、Cr、Ti之任一金屬或該等的合金、該等的組合構成。作為組合之例，於將基板側電極141及LED側電極142構成作為金屬電極層之情形時，考慮有如下的積層構造，即由下面開始為W/Pt/Au、Rh/Pt/Au、W/Pt/Au/Ni、Pt/Au、Ti/Pt/Au、Ti/Rh、或是TiW/Au的積層構造。
電極14於光出射方向具有階差處。基板側電極141的與光出射方向平行的截面之面積(第一面積、截面積)，不同於LED側電極142的與光出射方向平行的截面之面積(第二面積、截面積)。圖1中，基板側電極141的截面積大於LED側電極142的截面積。此外，基板側電極141及LED側電極142的最外表面較佳為Au。
(藍色LED15)
藍色LED15可利用公知者，具體而言可利用半導體發光元件。其中，GaN系半導體作為藍色LED15較佳，其原因在於可發出能夠有效率地激發螢光物質的短波長之光。
作為藍色LED15的半導體層，氮化物半導體為可見光域的短波長域、近紫外光域、或是較其為更短波長域，較佳適當地被用於結合了此點 與波長轉換構件(螢光體)的半導體模組1中。又，不限定於此，ZnSe系、InGaAs系、AlInGaP系等半導體亦可。
由半導體層而得之發光元件構造中，於第一導電類型(n型)層、第二導電類型(p型)層之間具有活性層的構造於輸出、效率上良好而較佳，但並不限定於此。又，可於各導電類型層之一部分設置絕緣、半絕緣性、逆導電(reverse conducting)類型構造，或可為相對於第一、二導電類型層附加性地設置其等的構造。也可附加性地具有其他電路構造，例如保護元件構造。
作為藍色LED15及其半導體層的構造，可舉出具有MIS接合、PIN接合、PN接合之同質構造、異質構造或雙異質構成。又，也可將各層設為超晶格構造，或使作為活性層之發光層形成產生量子效果的單一量子井構造、多量子井構造。
於藍色LED15的表面設有可自外部供給電力之金屬端子。
各個藍色LED15的大小並未特別限定，但於要求作為顯示畫面之解析度的情形時，要求LED15細微化，必須設為例如縱寬及橫寬為20μm以下，更佳為十幾μm以下。藉由使用本技術，即使藍色LED15為如此小的情形，由樹脂16而得之密接力充足地高，故可相對於配線基板11使藍色LED15穩定而固定。
(樹脂16)
樹脂16使藍色LED15及電極14固定於配線基板11，並且防止光從藍色LED15的側面漏出。樹脂16也被稱為底部填充(underfill)，作為一例，可使液狀之樹脂固化而形成。樹脂16被埋入半導體模組1中，至少包含配線基板11的上部、藍色LED15的側面之一部分、與電極14之側面的區域。
藍色LED15的發光自藍色LED15中與配線基板11側相反側的光出射面151釋出。因此，藉由以樹脂16被覆藍色LED15中的至少側面，可獲得以下的作用及效果。第一，可避免光自藍色LED15的側面漏出。第二，可抑止與來自光出射面151的發光相比具有無法無視之色差的光從側面向外釋出，減低整體的發光顏色中的顏色不一致產生。第三，可使向側面方向行進的光往半導體模組1的光取出方向側反射，進而藉由限制往外部的發光區域，提高釋出的光的指向性，並且提高光出射面151的發光輝度。第四，可藉由使產生自藍色LED15的熱向樹脂16傳導，提高藍色LED15的散熱性。第五，可提高藍色LED15的發光層的耐濕性。
自藍色LED15的光出射面151連續之側面，即與藍色LED15的厚度方向平行之側面側，被樹脂16被覆，且若光出射面151自樹脂16露出，則其外面形狀並不特別限定。例如，樹脂16可為超過光出射面151而突出的構造或是不充滿光出射面151而凹陷的構造。
實施形態1中，如圖1所示，樹脂16的表面161構成為沿著光出射面151的面狀。即，樹脂16的被覆區域的露出表面，以與光出射面151的面成為大致相同的面的方式形成。藉此，抑制半導體模組1內的發光特性的不一致，提升成品率。又，藉由被覆側面的大致整面，可提高藍色LED15的散熱性。
本實施形態中，樹脂16是由白色系樹脂或黑色系樹脂構成。因此，樹脂16的顏色較佳為有色系的顏色，尤佳為白色系的顏色或黑色系的顏色。
(電極14的固定強化)
圖1中，基板側電極141的截面積與LED側電極142的截面積不同，因此樹脂16除了基板側電極141的側面及LED側電極142的側面外，也密接於任一電極的表面裸露的區域(階差面)。對於階差面，樹脂16的吸附作用發 揮功效，藉此基板側電極141及LED側電極142被更強力地固定於配線基板11。
如圖1所示，基板側電極141的截面積大於LED側電極142的截面積的情形時，自基板側電極141的階差面的上部朝向配線基板11壓住基板側電極141的固定力17，於基板側電極141發揮功效。藉此，可將電極14及配置於其上的藍色LED15更穩定而固定於配線基板11，故更佳。藍色LED15的光出射面151與樹脂16的表面161較佳為大致相同的面。藉此，可抑制藍色LED15的發光自藍色LED15的側面出射，因此可提高藍色LED15的發光效率。
(半導體模組1的製造方法)
圖2係說明本發明之實施形態1的半導體模組1之製造方法的圖。
(藍色LED15的形成步驟)
首先，如圖2的(a)所示，於成長基板18設置藍色LED15。成長基板18為使藍色LED15的半導體層疊晶生長(epitaxial growth)之基板。作為氮化物半導體的基板，有如下的基板：如將C面、R面、及A面之任一者設為主面的藍寶石、尖晶石(MgAl2O4)般之絕緣性基板、或與碳化矽(6H、4H、3C)、Si、ZnS、ZnO、GaAs、金剛石、以及氮化物半導體晶格接合之鈮酸鋰(lithium niobate)、釹鎵氧化物(Neodymium Gallate)等氧化物基板、GaN、AlN等氮化物半導體。
作為氮化物半導體，一般式為InxAlyGa1-x-yN，(0≦x、0≦y、x+y≦1)，也可將B、P、As進行混晶。藍色LED15的n型半導體層及p型半導體層並不特別限定於單層、多層。於氮化物半導體層具有作為活性層之發光層，該活性層設為單(SQW)或多量子井構造(MQW)。
於成長基板18上，使用如下構造：介隔緩衝層等氮化物半導體的下底層，例如低溫成長薄膜GaN與GaN層，作為n型氮化物半導體層，例如積層摻Si的GaN之n型接觸層與GaN/InGaN之n型多層膜層，接著積層InGaN/GaN之MQW的活性層，進而作為p型氮化物半導體層，例如積層了摻Mg之InGaN/AlGaN的p型多層膜層與摻Mg的GaN之p型接觸層。又，氮化物半導體的發光層(活性層)例如具有包含井層的、包含障壁層與井層的量子井構造。用於活性層的氮化物半導體雖也可藉由p型雜質摻雜物，但較佳藉由無摻雜物或n型雜質摻雜物使發光元件高輸出化。
藉由使井層包含Al，可獲得作為GaN的能隙能量之較波長365nm更短的波長。自活性層釋出的光之波長，依據發光元件的目的及用途等，設於360nm~650nm附近，較佳設為380nm~560nm之波長。井層之組成為較佳為InGaN，適合被用於可見光/近紫外光域，此時的障壁層之組成較佳為GaN、InGaN。作為障壁層與井層之膜厚的具體例，分別為1nm以上30nm以下、1nm以上20nm以下，且可設為一層井層之單量子井、介隔有障壁層等的複數層井層之多量子井構造。
(LED側電極142之形成步驟)
於形成藍色LED15後，如圖2的(b)所示，於藍色LED15之上形成複數個LED側電極142。對於該形成，使用周知的一般之電極形成技術。LED側電極142之代表性的材料，例如為Au。
(分離槽19之形成步驟)
於形成LED側電極142後，如圖2的(c)所示，於藍色LED15之上形成複數個分離槽19。對於該形成，使用標準的半導體選擇蝕刻程序。圖2中，於相鄰的LED側電極142之間形成分離槽19。所形成的分離槽19到達成長基 板18的表面。藉由形成分離槽19，一片藍色LED15於成長基板18的表面被分割為複數個個別之藍色LED15(發光晶片)。
(兩個基板的位置對準步驟)
於分離槽19形成後，如圖2的(d)所示，準備預先形成了金屬配線12、絕緣層13以及基板側電極141之配線基板11。對於配線基板11的基板側電極141之形成，使用周知的一般的電極形成技術。基板側電極141之代表性的材料例如為Au。與準備配線基板11一併進行，如圖2的(d)所示，使成長基板18反轉。於反轉後，以各基板側電極141與各LED側電極142對向的方式，使配線基板11與成長基板18進行位置對準。
(基板的貼合步驟)
於位置對準完成後，如圖2的(e)所示，使配線基板11與成長基板18貼合。此時，使用既有的貼合技術，以對應的基板側電極141及LED側電極142接合的方式，將配線基板11及成長基板18藉由加壓而從上下壓制。藉此，對應的基板側電極141及LED側電極142被一體化，構成電極14。
(樹脂16的形成步驟)
貼合步驟完成後，於配線基板11與成長基板18之間形成的空隙內，填充液狀樹脂16a。於圖2的(f)表示填充後之狀態。此時，例如於充滿液狀樹脂16a的容器內，以貼合後之狀態浸泡即可。液狀樹脂16a的主材料並不特別限定，但例如較佳為環氧樹脂。再者，液狀樹脂16a的注入方法除了上述之外，也可為利用注射針，尤其是以配合在配線基板11與藍色LED15之間形成的空隙的尺寸之微針(microneedle)注入液狀樹脂16a的方法。作為此情形時之注射針的材料，使用金屬製或塑膠製等。
填充步驟中，較佳於50℃~200℃之溫度範圍內的溫度下填充液狀樹脂16a。藉此，易於將液狀樹脂16a正常地填充於空隙內。進而，溫度範 圍較佳為80℃~170℃。藉此，可減少損害樹脂16之特性(後述之硬化過程後的密接性、散熱性等)之虞。又，溫度範圍進而更佳為100℃~150℃。藉此，可減少產生於上述空隙之氣泡等，可不產生對流等而幾乎完全地進行填充，容易製造半導體模組1。
尤其，於將各個藍色LED15之大小設為例如縱寬及橫寬為20μm以下，更佳為數μm~十幾μm，將藍色LED15的厚度設為數μm(2μm~10μm)左右之微小尺寸的情形時，於基板剝離及剝離後之步驟中液狀樹脂16a作為用於提升固著力的補強構件而有用地發揮功能。藉此，可使樹脂16之上述製品間的特性之不一致更小，故可容易地製造半導體模組1。
被填充於空隙內之液狀樹脂16a如圖2的(f)所示，被完全埋入空隙內。藉此，液狀樹脂被埋入藍色LED15的側面、電極14的側面及階差面，以及配線基板11之上部。於液狀樹脂16a之填充完成後，使液狀樹脂16a固化。再者，關於使液狀樹脂16a固化的方法並不特別限定，例如可將液狀樹脂16a進行加熱，或對液狀樹脂16a照射紫外線，藉此使液狀樹脂16a固化。
(成長基板18的剝離步驟)
於填充步驟完成後，如圖2的(g)所示，使成長基板18剝離。對於此步驟，使用既有的剝離技術。作為既有的剝離技術之一例，可利用使用了雷射光的照射之剝離技術。例如將藍寶石等透明基板用於LED之成長基板，將氮化物半導體作為發光元件層而進行晶體成長的情形時，藉由自透明基板側以一定條件照射雷射光，可減輕對成長基板與晶體成長層之界面施予的損傷。再者，作為其他手段，也可為使用了濕式蝕刻法、輪磨或研磨法等的成長基板18之剝離。
由於樹脂16將電極14及藍色LED15密接固定於配線基板11，故可於剝離成長基板18時，防止藍色LED15及電極14被一起剝離。於剝離成長 基板18後，藍色LED15的光出射面及樹脂16的表面161露出。藉此，完成半導體模組1之製造。
上述之製造方法僅只不過是成為可製造半導體模組1之方法的一例。此處所說明的各步驟是用於容易製造半導體模組1，構成半導體模組1之製造方法的步驟並不限定於該等。
本實施形態的半導體模組1所具備的各構件的關係也可以如下述表現。樹脂16被覆藍色LED15的側面及背面，且將藍色LED15保持水平。電極14為被設於配線基板11的表面與藍色LED15的背面之間，貫通樹脂16，且電連接配線基板11與藍色LED15的電極材。藍色LED15的光出射面(表面)151自樹脂16露出，將光出射面(表面)151與樹脂16的表面161配置於同一平面。
藉由本實施形態的半導體模組1發揮的效果也可如下述表現。藍色LED15可藉由電極14及樹脂16而保持於水平狀態。進而，存取的發光片段的大小可縮小至藍色LED15本身的大小，故可使發光片段精細化。也可使半導體模組1的光軸穩定化。也可容易地形成藍色LED15(螢光體)。
本實施形態的半導體模組1所具備的各構件的關係也可如下述表現。複數個藍色LED15並列搭載於配線基板11上。樹脂16被覆複數個藍色LED15的側面及背面，且將複數個藍色LED15保持為水平。電極14被設於配線基板11的表面與複數個藍色LED15之間，貫通樹脂16，且電連接配線基板11與複數個藍色LED15的電極材。複數個發光晶片的光出射面(表面)151自樹脂16露出，將光出射面(表面)151與樹脂16的表面161配置於同一平面。
藉由本實施形態的半導體模組1發揮的效果也可如下述表現。全部的複數個藍色LED15可藉由電極14及樹脂16而保持於水平狀態。藉此，可 防止給人起因於數個藍色LED15傾斜的發光片段的不協調感。進而，可將半導體模組1的複數個發光片段的大小縮小至複數個藍色LED15本身的大小，故可使複數個發光片段精細化。也可使半導體模組1的光軸穩定化。也可容易地形成複數個藍色LED15(螢光體)。亦可防止複數個發光片段的光軸的不一致，或是防止半導體模組1所發出之光的不一致。
〔實施形態2〕
參照圖3，針對本發明的實施形態2於以下進行說明。對於本實施形態中與實施形態1共通的構件，標註相同的構件號碼，若非必要不重複其詳細說明。
圖3係表示本發明之實施形態2的半導體模組之截面構成的截面圖。如該圖所示，本實施形態的半導體模組1具備電極14a，以取代實施形態1的半導體模組1之電極14。電極14a的連接於金屬配線12之第一部分為基板側電極141a，電極14a的連接於藍色LED15的表面的金屬端子(未圖示)的第二部分為LED側電極142a。又，基板側電極141a與LED側電極142a為大致相同的尺寸，分別具有半球狀的形狀。於電極14a的側面的一部分形成有變細處，該變細處構成階差面。
將配線基板11與成長基板18貼合時，考慮到以對應的基板側電極141a及LED側電極142a接合的方式，將配線基板11及成長基板18藉由加壓而從上下壓制的情形。此情形時，對應的基板側電極141a及LED側電極142a被一體化，構成電極14a，電極14a成為圖3所示的形狀。
於使對應的基板側電極141a及LED側電極142a接合的情形時，樹脂16進入位於電極14a的側面之一部分的變細處，藉此，可提高基板側電極141a與LED側電極142a的固定強度。
再者，基板側電極141a及LED側電極142a的形狀不限於半球狀。重點是，基板側電極141a及LED側電極142a的形狀，只要是於電極14a的側面的一部分形成變細處的形狀即可。例如，基板側電極141a及LED側電極142a的形狀分別可為圓錐或截錐形狀等凸形狀。
〔實施形態3〕
參照圖4，針對本發明的實施形態3於以下進行說明。對於本實施形態中與實施形態1~2共通的構件，標註相同的構件號碼，若非必要不重複其詳細說明。
圖4係表示本發明之實施形態3的半導體模組1之截面構成的截面圖。如該圖所示，本實施形態的半導體模組1除了實施形態1的半導體模組1的所有構成要素之外，還具備紅螢光體31、綠螢光體32以及透光性質樹脂33。
樹脂16被埋入配線基板11的上部、藍色LED15的側面、與電極14的周圍。以下，將圖4所示的3個藍色LED15，從圖中左邊開始依序稱為第一、第二以及第三藍色LED15。紅螢光體31被配置於第一藍色LED15的表面(光出射面151)。綠螢光體32被配置於第二藍色LED15的表面(光出射面151)，該第二藍色LED15被配置於第一藍色LED15旁邊。透光性質樹脂33被配置於第三藍色LED15的表面(光出射面151)，該第三藍色LED15被配置於第二藍色LED15旁邊。上述之各種螢光體至少覆蓋LED15的光出射面151的方式，例如藉由光刻或網版印刷等方法形成。
紅螢光體31將來自配置於其正下方的藍色LED15的發光的波長進行轉換，出射紅色光。綠螢光體32將來自配置於其正下方的藍色LED15的發光的波長進行轉換，出射綠色光。透光性質樹脂33不將來自配置於其正下方的藍色LED15的發光的波長進行轉換，而使其直接通過。藉此，本實 施形態的半導體模組1可發出紅色光、綠色光以及藍色光之三原色的顏色之光。又，組入本實施形態的半導體模組1的顯示裝置，藉由對各LED進行發光控制而可進行顏色顯示。
紅螢光體31及綠螢光體32，具體而言由如下等構成：玻璃板、於其具備光轉換部者、或是由具有光轉換構件之螢光體結晶或具有其相之單晶體、多晶體、非晶質體、陶瓷體、或是螢光體結晶粒子而得的、其與被適當附加的透光性構件之燒結體、凝集體、多孔性材料、於其等混入、含浸透光性構件例如樹脂者、或是具有螢光體粒子之透光性構件，例如透光性樹脂的成形體等。再者，由耐熱性的觀點來看，相較於樹脂等有機材料，較佳以無機材料構成光透射構件。具體而言較佳由含有螢光體的透光性之無機材料構成，尤其以螢光體與無機物(結合材)之燒結體、或是由螢光體構成的燒結體、單晶體形成，可靠性提高。再者，使用YAG(釔‧鋁‧石榴石)之螢光體的情形時，由可靠性的觀點來看，除了YAG的單晶體、高純度的燒結體之外，較佳為將氧化鋁(Al2O3)設為結合材(binder)之YAG/氧化鋁的燒結體。又，紅螢光體31及綠螢光體32的形狀並不特別限定，但實施形態3中將紅螢光體31及綠螢光體32設為板狀。藉由設為板狀，與構成為面狀的藍色LED15之出射面的結合效率佳，能夠以紅螢光體31及綠螢光體32之主面成為大致平行的方式容易地進行位置對準。除此之外，藉由將紅螢光體31及綠螢光體32的厚度設為大致一定，可抑制所構成之波長轉換構件的偏倚，結果，可將通過的光之波長轉換量設為大致均一而使混色的比例穩定，抑制發光面的部位之顏色不均勻。
又，可與藍色LED15適當地組合而發出白光，作為用於波長轉換構件之代表性的螢光體，可舉出以鈰概括之YAG的螢光體及LAG(鎦‧鋁‧石榴石)的螢光體。尤其，於高輝度且長時間使用時，較佳為(Re1-xSmx) 3(Al1-yGay)5O12：Ce(0≦x<1、0≦y≦1、Re為選自由Y、Gd、La、Lu構成之群之至少一種元素。)等。又，可使用包含選自由YAG、LAG、BAM、BAM：Mn、(Zn、Cd)Zn：Cu、CCA、SCA、SCESN、SESN、CESN、CASBN及CaAlSiN3：Eu構成之群的至少一種之螢光體。
本實施形態的半導體模組1中，由於至少光出射面151被平坦化，故可將紅螢光體31、綠螢光體32及透光性質樹脂33相對於藍色LED15之光出射面151提升密接力，並且亦可謀求膜厚之均一化，因此提升光學特性。又，若樹脂16之表面161以沿著光出射面151的面狀之方式，即，以樹脂16的被覆區域之露出表面與光出射面151之面成為大致相同面的方式形成，則該面成為接近平坦的狀態。因此，各種螢光體的形成步驟(例如光刻或網版印刷等)中可進行穩定之圖案形成，可期待製品品質的提升。
〔實施形態4〕
參照圖5及6，針對本發明的實施形態4於以下進行說明。對於本實施形態中與實施形態1~3之至少一者共通的構件，標註相同的構件號碼，若非必要不重複其詳細說明。
圖5係表示本發明之實施形態4的半導體模組1之截面構成的截面圖。如該圖所示，本實施形態的半導體模組1與實施形態1的半導體模組1的構成要素相同。然而，本實施形態中，樹脂16的構成不同。詳細而言，樹脂16由包含第一層及第二層之至少兩層構成，圖5之例中，第一層為白色系樹脂162(第一樹脂)，第二層為光反射率低於白色系樹脂162之黑色系樹脂163(第二樹脂)。白色系樹脂162被配置於配線基板11側，於白色系樹脂162之上配置有黑色系樹脂163。
根據圖5的構成，可於配線基板11側將樹脂16的光反射率控制為50%以上。進而，可於藍色LED15側將樹脂16的光透射率控制為50%以下。於之後詳述半導體模組1之光透射率及光反射率。
圖6係說明藉由本發明之實施形態4的半導體模組1發揮的效果的圖。
圖6的(a)表示構成半導體模組1的正面(表面)之複數個部分區域41。於該圖表示3×3=9個部分區域41。一個部分區域41，例如對應組入半導體模組1之顯示裝置的一個像素。圖6的(a)中，一個部分區域41是由三個點構成。各點例如為發出三原色之任一者的光的部分。
圖6的(a)中，中央的部分區域41所包含的三個點中，僅配置於區域之中心的中心點42發光的情形時，僅中央的部分區域41發光。將此情形時的發光輝度設為100。圖6的(b)表示半導體模組1中發生漏光的情況。圖6的(b)中，僅使中心點42發光的情形時，發光範圍43由中央的部分區域41擴展至周圍的部分區域41。將中央的部分區域41之發光的輝度設為100之情形時，於周圍的部分區域41漏出的發光輝度為20。將此情形時的漏光率規定為20%。漏光率也可說是以半導體模組1進行面發光時的對比度比。
圖6的(c)為表示半導體模組1之面內方向的漏光率與樹脂16的光透射率或光反射率的關係之圖表。該圖表的縱軸表示漏光率，橫軸表示光透射率或光反射率。
如曲線51所示，樹脂16的光透射率越高，半導體模組1的漏光率越變高。另一方面，如曲線52所示，樹脂16的光反射率越高，半導體模組1的漏光率越變低。光透射率為50%以下的情形時，漏光率為20%以下。光反射率為50%以上的情形時，同樣地，漏光率為20%以下。
半導體模組1中，樹脂16的光透射率較佳為50%以下。藉此，可將漏光率設為20%以下，故可使組入半導體模組1之顯示裝置的顯示品質提升。又，半導體模組1中，樹脂16的光反射率較佳為50%以上。藉此，可將漏光率設為20%以下，故可使組入半導體模組1之顯示裝置的顯示品質提升。
〔實施形態5〕
參照圖7，針對本發明的實施形態5於以下進行說明。對於本實施形態中與實施形態1~4之至少一者共通的構件，標註相同的構件號碼，若非必要不重複其詳細說明。
圖7係表示本發明之實施形態5的半導體模組1之截面構成的截面圖。如該圖所示，本實施形態的半導體模組1之構成要素與實施形態1的半導體模組1的構成要素相同。然而，本實施形態中，藍色LED15的形狀不同。詳細而言，於藍色LED15的光出射面151，鄰接的複數個藍色LED15之至少一部分相互連接。圖7之例中，複數個藍色LED15共同具有一個光出射面151。藉此，可使半導體模組1之表面更為平滑。
本實施形態的半導體模組1例如如以下所述製造。於製作分離槽19的步驟中，以不使分離槽19到達成長基板18的表面，且於成長基板18的表面僅殘留少許(例如1μm)疊晶層之方式，製作分離槽19。藉此，於成長基板18的剝離步驟中，於例如通過雷射照射剝離成長基板18時，非界面的GaN層不分解，如圖7所示，可設為作為薄層而殘留於半導體模組1的狀態。結果，可更為改善半導體模組1之製作時的表面之平滑化。
〔總結〕
本發明之態樣1的半導體模組(1)之特徵在於，包括：基板(配線基板11)；發光晶片(藍色LED15)，其並列搭載於該基板上；樹脂(16)， 其被覆該發光晶片的側面及背面，且將該發光晶片保持水平；以及電極材(電極14)，其設置於該基板的表面與該發光晶片的背面之間，貫通該樹脂，且電連接該基板與該發光晶片；該發光晶片的光出射面(表面)(151)成為自該樹脂露出，將該光出射面(表面)與該樹脂的表面(161)配置於同一平面。
根據上述構成，可藉由電極材及樹脂將發光晶片保持為水平狀態。進而，可將半導體模組的發光片段的大小縮小至發光晶片本身的大小，因此可使發光片段精細化。
本發明之態樣2的半導體模組(1)之特徵在於，包括：基板(配線基板11)；複數個發光晶片(藍色LED15)，其並列搭載於該基板上；樹脂(16)，其被覆該複數個發光晶片的側面及背面，且將該複數個發光晶片保持水平；以及電極材(電極14)，其設置於該基板的表面與該複數個發光晶片的背面之間，貫通該樹脂，且電連接該基板與該複數個發光晶片；該複數個發光晶片的光出射面(表面)(151)成為自該樹脂露出，將該光出射面(表面)與該樹脂的表面(161)配置於同一平面。
根據上述構成，可藉由電極材及樹脂將複數個發光晶片全部保持為水平狀態。藉此，可防止給人起因於數個發光晶片傾斜的發光片段的不協調感。進而，可將半導體模組的複數個發光片段的大小縮小至複數個發光晶片本身的大小，故可使複數個發光片段精細化。
本發明之態樣3的半導體模組之特徵在於，於上述態樣1或2中，俯視時的該發光晶片的縱寬及橫寬為20μm以下。
本發明之態樣4的半導體模組之特徵在於，於上述態樣1或2中，該基板具有金屬配線，該電極材是由連接於該金屬配線的第一部分(基板側電極141)、以及連接於該發光晶片的第二部分(LED側電極142)構成， 該第一部分的與光出射方向平行的截面之第一面積和該第二部分的與該光出射方向平行的截面之第二面積不同。
本發明之態樣5的半導體模組之特徵在於，於上述態樣4中，該第一面積大於該第二面積。
根據上述構成，由於對電極施加將電極的第二部分壓在基板的固定力，因此可更進一步使發光晶片固定於基板。
本發明之態樣6的半導體模組之特徵在於，於上述態樣1或2中，該樹脂是由包含第一層及第二層之至少兩層構成，該第一層為配置於該基板側的第一樹脂(白色系樹脂162)，該第二層為配置於該第一樹脂之上的、光反射率低於該第一樹脂的第二樹脂(黑色系樹脂163)。
根據上述構成，可防止向發光晶片的周圍之漏光。
本發明的態樣7的顯示裝置之特徵在於，包括上述態樣1至6中任一者的半導體模組。
本發明的態樣8的製造方法是製造上述態樣1至6中任一者的半導體模組的製造方法，其特徵在於，具有於被固化前，將液狀的樹脂在包含於50℃~200℃的溫度範圍的溫度下填充於基板間的步驟。
根據上述構成，容易將液狀的樹脂正常地填充於基板間的空隙內。
本發明的態樣9的製造方法之特徵在於，於上述態樣8中，該溫度範圍為80℃~170℃。
根據上述構成，可減少有損固化後之樹脂的特性(密接性、散熱性等)之虞。
本發明的態樣10的製造方法之特徵在於，於上述態樣8中，該溫度範圍為100℃~150℃。
根據上述構成，可更為減小固化後的樹脂之上述特性的製品間不均，因此可容易製造半導體模組。
本發明的態樣11的製造方法之特徵在於，於上述態樣8至10中，該半導體模組包括：基板，其具有金屬配線；電極，其配置於該基板上，且連接於該金屬配線；發光元件，其配置於該電極上，具有與該基板側為相反側的光出射面；以及樹脂，其至少覆蓋該基板上、該發光元件的側面的一部分、與該電極的階差處，相鄰的該發光元件的至少一部分，於該發光元件的光出射面側相互連接。
根據上述構成，可使半導體模組的表面更平滑。
本發明的態樣12的半導體模組之特徵在於，包括：基板(配線基板11)，其具有金屬配線(12)；電極(14)，其配置於該基板上，且連接於該金屬配線；發光元件(藍色LED15)，其連接於該電極，具有與該基板側為相反側之光出射面；該電極於該電極的側面具有階差處，進而包括樹脂(樹脂16)，其至少覆蓋該基板上、該發光元件的側面的一部分、與該電極的階差處。
根據上述構成，可使發光元件及電極更強力地固定於所搭載的基板。
本發明的態樣13之半導體模組的特徵在於，於上述態樣12中，該發光元件之該光出射面與該樹脂之表面為大致相同的面。
根據該構成，可防止發光元件之發光由發光元件的側面出射，因此可使發光元件的發光效率提升。
本發明的態樣14之半導體模組的特徵在於，包括：基板，其具有金屬配線；電極，其配置於該基板上，且連接於該金屬配線；發光元件，其配置於該電極上，具有與該基板側為相反側之光出射面；以及樹脂，其 至少覆蓋該基板上、該發光元件的側面的一部分、與該電極的階差處之至少一者，相鄰的該發光元件的至少一部分，於該發光元件的光出射面側相互連接。
根據上述構成，可使半導體模組的表面更平滑。
本發明並不限定於上述的各實施形態，可在申請專利範圍所示的範圍內進行各種變更。適宜地組合不同的實施形態中所分別揭示的技術性手段而獲得的實施形態，也包含於本發明的技術性範圍中。藉由組合各實施形態中所分別揭示的技術性手段，能夠形成新的技術性特徵。
1:半導體模組
11:配線基板
12:金屬配線
13:絕緣層
14:電極
141:基板側電極
142:LED側電極
15:藍色LED
151:光出射面
16:樹脂
161:表面
17:固定力

Claims (13)

  1. 一種半導體模組，其中，包括：基板；發光元件，其搭載於該基板上；樹脂，其被覆該發光元件的側面及背面，且將該發光元件保持水平；以及電極，其設置於該基板的表面與該發光元件的該背面之間，貫通該樹脂，且電連接該基板與該發光元件；該發光元件的光出射面(表面)成為自該樹脂露出，將該光出射面(表面)與該樹脂的表面配置於同一平面，在該電極的側面的一部分形成有變細處，該變細處構成階差面，該樹脂進入該變細處。
  2. 一種半導體模組，其中，包括：基板；複數個發光元件，其並列搭載於該基板上；樹脂，其被覆該複數個發光元件的側面及背面，且將該複數個發光元件保持水平；以及電極，其設置於該基板的表面與該複數個發光元件的該背面之間，貫通該樹脂，且電連接該基板與該複數個發光元件；該複數個發光元件的光出射面(表面)成為自該樹脂露出，將該光出射面(表面)與該樹脂的表面配置於同一平面，在該電極的側面的一部分形成有變細處，該變細處構成階差面，該樹脂進入該變細處。
  3. 一種半導體模組，其中，包括：基板； 發光元件，其搭載於該基板上；樹脂，其被覆該發光元件的側面及背面，且將該發光元件保持水平；以及電極，其設置於該基板的表面與該發光元件的該背面之間，貫通該樹脂，且電連接該基板與該發光元件；該發光元件的光出射面(表面)成為自該樹脂露出，將該光出射面(表面)與該樹脂的表面配置於同一平面，該基板具有金屬配線，該電極是由連接於該金屬配線的第一部分、以及連接於該發光元件的第二部分構成，該第一部分中的與該基板的表面平行的面之第一面積和該第二部分中的與該基板的表面平行的面之第二面積不同。
  4. 一種半導體模組，其中，包括：基板；複數個發光元件，其並列搭載於該基板上；樹脂，其被覆該複數個發光元件的側面及背面，且將該複數個發光元件保持水平；以及電極，其設置於該基板的表面與該複數個發光元件的該背面之間，貫通該樹脂，且電連接該基板與該複數個發光元件；該複數個發光元件的光出射面(表面)成為自該樹脂露出，將該光出射面(表面)與該樹脂的表面配置於同一平面，該基板具有金屬配線，該電極是由連接於該金屬配線的第一部分、以及 連接於該發光元件的第二部分構成，該第一部分中的與該基板的表面平行的面之第一面積和該第二部分中的與該基板的表面平行的面之第二面積不同。
  5. 如申請專利範圍第1至4中任一項的半導體模組，其中，俯視時的該發光元件的縱寬及橫寬為20μm以下。
  6. 如請求項3或4的半導體模組，其中，該第一面積大於該第二面積。
  7. 一種半導體模組，其特徵在於，包括：基板；發光元件，其搭載於該基板上；樹脂，其被覆該發光元件的側面及背面，且將該發光元件保持水平；以及電極，其設置於該基板的表面與該發光元件的該背面之間，貫通該樹脂，且電連接該基板與該發光元件；該發光元件的光出射面(表面)成為自該樹脂露出，將該光出射面(表面)與該樹脂的表面配置於同一平面，該樹脂是由包含第一層及第二層之至少兩層構成，該第一層為配置於該基板側的第一樹脂，該第二層為配置於該第一樹脂之上的、光反射率低於該第一樹脂的第二樹脂。
  8. 一種半導體模組，其中，包括：基板；複數個發光元件，其並列搭載於該基板上；樹脂，其被覆該複數個發光元件的側面及背面，且將該複數個發光元件保持水平；以及電極，其設置於該基板的表面與該複數個發光元件的該背面之間，貫通該樹脂，且電連接該基板與該複數個發光元件； 該複數個發光元件的光出射面(表面)成為自該樹脂露出，將該光出射面(表面)與該樹脂的表面配置於同一平面，該樹脂是由包含第一層及第二層之至少兩層構成，該第一層為配置於該基板側的第一樹脂，該第二層為配置於該第一樹脂之上的、光反射率低於該第一樹脂的第二樹脂。
  9. 種顯示裝置，其中，包括請求項1至8中任一項的半導體模組。
  10. 一種製造方法，製造請求項1至8中任一項的半導體模組，其中，具有於被固化前，將液狀的樹脂在包含於50℃~200℃的溫度範圍的溫度下填充於基板間的步驟。
  11. 如請求項10項的製造方法，其中，該溫度範圍為80℃~170℃。
  12. 如請求項10項的製造方法，其中，該溫度範圍為100℃~150℃。
  13. 一種半導體模組的製造方法，其特徵在於，該半導體模組包括：基板；複數個發光元件，其並列搭載於該基板上；樹脂，其被覆該複數個發光元件的側面及背面，且將該複數個發光元件保持水平；以及電極，其設置於該基板的表面與該複數個發光元件的該背面之間，貫通該樹脂，且電連接該基板與該複數個發光元件；該複數個發光元件的光出射面(表面)成為自該樹脂露出，將該光出射面(表面)與該樹脂的表面配置於同一平面，該基板具有金屬配線；該電極配置於該基板上，且連接於該金屬配線； 該發光元件配置於該電極上，具有與該基板側為相反側的光出射面；以及該樹脂至少覆蓋該基板上、該發光元件的側面的一部分、與該電極的階差處，相鄰的該發光元件的至少一部分，於該發光元件的光出射面側相互連接。
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