JP2012216712A - 発光ダイオード装置の製造方法および発光ダイオード素子 - Google Patents
発光ダイオード装置の製造方法および発光ダイオード素子 Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
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- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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Abstract
【解決手段】シート状に形成された蛍光体層17を用意し、光半導体層3を、蛍光体層17の上面に形成し、電極部4を、光半導体層3の上面に形成し、光反射成分を含有する封止樹脂層14を、蛍光体層17の上に、光半導体層3および電極部4を被覆するように形成し、封止樹脂層14を、電極部3の上面が露出されるように、部分的に除去して、発光ダイオード素子20を製造し、発光ダイオード素子20とベース基板16とを厚み方向に対向配置させ、電極部4と端子15とを電気的に接続して、発光ダイオード素子20をベース基板16にフリップチップ実装する。
【選択図】図5
Description
シート状に形成された厚み75μmの蛍光体層を用意した(図2(a)参照)。
4 電極部
14封止樹脂層
15端子
16ベース基板
17蛍光体層
20発光ダイオード素子
21発光ダイオード装置
Claims (2)
- 端子が設けられたベース基板と、前記ベース基板にフリップ実装される発光ダイオード素子とを備える発光ダイオード装置の製造方法であって、
シート状に形成された蛍光体層を用意する工程、
光半導体層を、前記蛍光体層の厚み方向一方面に形成する工程、
電極部を、前記光半導体層の前記厚み方向一方面に、前記光半導体層と接続されるように形成する工程、
光反射成分を含有する封止樹脂層を、前記光半導体層および前記電極部を被覆するように形成する工程、
前記封止樹脂層を、前記電極部の前記厚み方向一方面が露出されるように、部分的に除去することにより、前記蛍光体層、前記光半導体層および前記電極部を備える前記発光ダイオード素子を製造する工程、および、
前記発光ダイオード素子と前記ベース基板とを厚み方向に対向配置させ、前記電極部と前記端子とを電気的に接続して、前記発光ダイオード素子を前記ベース基板にフリップチップ実装する工程
を備えることを特徴とする、発光ダイオード装置の製造方法。 - シート状に形成された蛍光体層と、
前記蛍光体層の前記厚み方向一方面に形成される光半導体層と、
前記光半導体層の前記厚み方向一方面に、前記光半導体層と接続されるように形成される電極部と、
前記光半導体層および前記電極部を被覆し、かつ、前記電極部の前記厚み方向一方面を露出する、光反射成分を含有する封止樹脂層と
を備えることを特徴とする、発光ダイオード素子。
Priority Applications (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011081853A JP2012216712A (ja) | 2011-03-28 | 2011-04-01 | 発光ダイオード装置の製造方法および発光ダイオード素子 |
EP12158375.1A EP2506322A3 (en) | 2011-03-28 | 2012-03-07 | Production method of light emitting diode device and light emitting diode element |
TW105134142A TW201705542A (zh) | 2011-03-28 | 2012-03-12 | 發光二極體裝置之製造方法及發光二極體元件 |
TW101108358A TW201240158A (en) | 2011-03-28 | 2012-03-12 | Producing method of light emitting diode device and light emitting diode element |
US13/431,240 US8680557B2 (en) | 2011-03-28 | 2012-03-27 | Producing method of light emitting diode device and light emitting diode element |
KR1020120030945A KR20120110050A (ko) | 2011-03-28 | 2012-03-27 | 발광 다이오드 장치의 제조 방법 및 발광 다이오드 소자 |
CN201510937597.7A CN105470372A (zh) | 2011-03-28 | 2012-03-28 | 发光二极管装置的制造方法及发光二极管元件 |
CN201210088602.8A CN102723410B (zh) | 2011-03-28 | 2012-03-28 | 发光二极管装置的制造方法及发光二极管元件 |
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EP (1) | EP2506322A3 (ja) |
JP (1) | JP2012216712A (ja) |
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Also Published As
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US8680557B2 (en) | 2014-03-25 |
US20120248485A1 (en) | 2012-10-04 |
TW201240158A (en) | 2012-10-01 |
EP2506322A2 (en) | 2012-10-03 |
CN105470372A (zh) | 2016-04-06 |
KR20120110050A (ko) | 2012-10-09 |
EP2506322A3 (en) | 2014-11-19 |
TW201705542A (zh) | 2017-02-01 |
CN102723410A (zh) | 2012-10-10 |
CN102723410B (zh) | 2016-06-22 |
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