CN111081840A - 发光元件 - Google Patents

发光元件 Download PDF

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CN111081840A
CN111081840A CN201911296398.7A CN201911296398A CN111081840A CN 111081840 A CN111081840 A CN 111081840A CN 201911296398 A CN201911296398 A CN 201911296398A CN 111081840 A CN111081840 A CN 111081840A
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layer
reflective layer
light
epitaxial structure
emitting element
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黄逸儒
庄东霖
沈志铭
许圣宗
黄冠杰
黄靖恩
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Genesis Photonics Inc
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Genesis Photonics Inc
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Abstract

本发明提供一种发光元件,包括一磊晶结构、一黏着层、一第一反射层、一第二反射层、一阻挡层、一第一电极以及一第二电极;磊晶结构包括一基板、一第一半导体层、一发光层以及一第二半导体层;黏着层设置于磊晶结构的第二半导体层上;第一反射层设置于黏着层上;第二反射层设置于第一反射层上且延伸至黏着层上;自第二反射层朝磊晶结构的方向定义一投影方向;第二反射层在投影方向上的投影面积大于第一反射层在投影方向上的投影面积;阻挡层设置于第二反射层上且具有导电性;第一电极电性连接于第一半导体层;第二电极电性连接于第二半导体层。本发明可利用第二反射层有效增加整体的反射面积,进而提升发光元件的整体出光效率。

Description

发光元件
本发明专利申请是申请日为2016年2月17日,申请号为201610088344.1的名为“发光元件”的发明专利申请的分案申请。
技术领域
本发明关于一种发光元件,尤指一种可有效增加反射面积的发光元件。
背景技术
请参阅图1,图1为现有技术的发光元件1的示意图。如图1所示,发光元件1包括一磊晶结构10、一欧姆接触层12、一反射层14、一阻挡层16以及二电极18,其中欧姆接触层12、反射层14、阻挡层16与电极18都设置于磊晶结构10上。反射层14用以将磊晶结构10的发光层100发出的光线反射,阻挡层16则用以吸收光线。一般而言,反射层14的材料为具有高反射率的银或银合金。由于银的化学性质较为活泼,在高温时不稳定,容易乱窜,因此,现有技术会将反射层14的面积限制在一定的范围内,以避免反射层14在后续制程中因温度提高而流窜至磊晶结构10,进而影响出光表现。相对地,反射层14的反射面积也受到限制,可反射的光线有限,使得发光元件1的整体出光效率无法有效提升。
发明内容
本发明提供一种可有效增加反射面积的发光元件,以解决上述问题。
根据一实施例,本发明的发光元件包括一磊晶结构、一黏着层、一第一反射层、一第二反射层、一阻挡层、一第一电极以及一第二电极。磊晶结构包括一基板、一第一半导体层、一发光层以及一第二半导体层。黏着层设置于磊晶结构的第二半导体层上。第一反射层设置于黏着层上。第二反射层设置于第一反射层上且延伸至黏着层上。自第二反射层朝磊晶结构的方向定义一投影方向。第二反射层在投影方向上的投影面积大于第一反射层在投影方向上的投影面积。阻挡层设置于第二反射层上且具有导电性。第一电极电性连接于第一半导体层。第二电极电性连接于第二半导体层。
在一实施例中,第一反射层的材料可为银或银合金,且第二反射层的材料可为非银金属、非银合金或由多层非银金属层所组成,其中第一反射层的反射率大于第二反射层的反射率,且第二反射层的反射率大于或等于80%。
另一实施例中,第一反射层的材料可为铝或铝合金,且第二反射层的材料可为非金属材料或绝缘性的多层材料层所组成,例如包括但不限于是布拉格反射层,其中第一反射层的反射率小于第二反射层的反射率,且第二反射层的反射率大于或等于80%。
综上所述,本发明在第一反射层上增设第二反射层,且使第二反射层延伸至黏着层上,使得第二反射层的投影面积大于第一反射层的投影面积。换言之,本发明可先将化学性质较为活泼的第一反射层(例如,银或银合金)设置在黏着层上的一定范围内,以避免第一反射层材料在后续制程中因温度提高而流窜至磊晶结构。接着,再将化学性质较不活泼的第二反射层(例如,非银金属或非银合金或绝缘性材料)设置于第一反射层上,且使第二反射层延伸至黏着层上。藉此,本发明即可利用第二反射层有效增加整体的反射面积,进而提升发光元件的整体出光效率。
关于本发明的优点与精神可以通过以下的发明详述及附图得到进一步的了解。
附图说明
图1为现有技术的发光元件的示意图;
图2为本发明第一实施例的发光元件的示意图;
图3为本发明第二实施例的发光元件的示意图;
图4为本发明第三实施例的发光元件的示意图;
图5为本发明第四实施例的发光元件的示意图。
附图标记说明:
1、3、5、7、9:发光元件;
10、30:磊晶结构;
12:欧姆接触层;
14:反射层;
16、38:阻挡层;
18:电极;
32:黏着层;
34:第一反射层;
36:第二反射层;
40:第一电极;
42:第二电极;
100、304:发光层;
300:基板;
302:第一半导体层;
306:第二半导体层;
320、360、380:侧表面;
D:投影方向;
A1、A2、A3、A4:投影面积。
具体实施方式
请参阅图2,图2为本发明第一实施例的发光元件3的示意图。如图2所示,发光元件3包括一磊晶结构30、一黏着层32、一第一反射层34、一第二反射层36、一阻挡层38、一第一电极40以及一第二电极42。磊晶结构30包括一基板300、一第一半导体层302、一发光层304以及一第二半导体层306,其中第一半导体层302位于基板300上,发光层304位于第一半导体层302上,且第二半导体层306位于发光层304上。基板300的材料可为蓝宝石,但不以此为限。第一电极40电性连接于第一半导体层302,且第二电极42电性连接于第二半导体层306。第一半导体层302可为N型半导体层(例如,N型氮化镓层),且第二半导体层306可为P型半导体层(例如,P型氮化镓层)。此时,第一电极40即为N型电极,且第二电极42即为P型电极。
黏着层32设置于磊晶结构30的第二半导体层306上。在此实施例中,黏着层32可为金属薄膜或金属氧化物层,例如氧化铟锡(Indium tin oxide,简称ITO),其中金属薄膜的厚度小于20nm。第一反射层34设置于黏着层32上。在此实施例中,第一反射层34的材料可为银或银合金。第二反射层36设置于第一反射层34上且延伸至黏着层32上。在此实施例中,第二反射层36的材料可为非银金属、非银合金或由多层金属层所组成,例如铝或铝合金。阻挡层38设置于第二反射层36上且具有导电性。在此实施例中,阻挡层38的材料可为铂、金、钨、钛或钛钨合金。此外,第二反射层36与阻挡层38可在同一道制程成型,使得第二反射层36的侧表面360与阻挡层38的侧表面380切齐。第二电极42设置于阻挡层38上,以通过阻挡层38、第二反射层36与黏着层32电性连接于磊晶结构30的第二半导体层306。
另一实施例中,第一反射层34的材料可为铝或铝合金。第二反射层36的材料可为非银金属、非银合金或由多层绝缘材料层所组成。其中阻挡层38设置于第二反射层36上且不具有导电性。阻挡层38的材料可与第二反射层36具相同材料且可在同一道制程成型。第二电极42设置于阻挡层38上,并以电性连接于磊晶结构30的第二半导体层306。
如图2所示,自第二反射层36朝磊晶结构30的方向定义一投影方向D。由于第二反射层36设置于第一反射层34上且延伸至黏着层32上,因此,第二反射层36在投影方向D上的投影面积A1大于第一反射层34在投影方向D上的投影面积A2且第一反射层34在投影方向D上的投影面积A2与发光层304在投影方向D上的投影面积A4的比值小于30%,其中一实施例中,第一反射层34在投影方向D上的投影面积A2与发光层304在投影方向D上的投影面积A4的比值小于10%。本发明可先将化学性质较为活泼的第一反射层34(例如,银或银合金)设置在黏着层32上的一定范围内,以避免第一反射层34在后续制程中因温度提高而流窜至磊晶结构30。接着,再将化学性质较不活泼的第二反射层36(例如,非银金属或非银合金)设置于第一反射层34上,且使第二反射层36延伸至黏着层32上。藉此,本发明即可利用第二反射层36有效增加整体的反射面积,进而提升发光元件3的整体出光效率。在此实施例中,第二反射层36的反射率大于阻挡层38的反射率,且第二反射层36的反射率大于或等于80%。
配合图2,请参阅图3,图3为本发明第二实施例的发光元件5的示意图。发光元件5与上述的发光元件3的主要不同之处在于,发光元件5的第二反射层36的侧表面360、阻挡层38的侧表面380与黏着层32的侧表面320切齐。换言之,第二反射层36在投影方向D上的投影面积A1可等于黏着层32在投影方向D上的投影面积A3且第一反射层34在投影方向D上的投影面积A2与发光层304在投影方向D上的投影面积A4的比值小于30%,其中一实施例中,第一反射层34在投影方向D上的投影面积A2与发光层304在投影方向D上的投影面积A4的比值小于10%,以进一步增加整体的反射面积。
配合图3,请参阅图4,图4为本发明第三实施例的发光元件7的示意图。发光元件7与上述的发光元件5的主要不同之处在于,发光元件7的第二反射层36进一步延伸至磊晶结构30的第二半导体层306上,使得第二反射层36在投影方向D上的投影面积A1大于黏着层32在投影方向D上的投影面积A3且第一反射层34在投影方向D上的投影面积A2与发光层304在投影方向D上的投影面积A4的比值小于30%,其中在一实施例中,第一反射层34在投影方向D上的投影面积A2与发光层304在投影方向D上的投影面积A4的比值小于10%。藉此,可再进一步增加整体的反射面积。
配合图4,请参阅图5,另一实施例中,图5为本发明第四实施例的发光元件9的示意图。第二反射层36的材料可为非银金属、非银合金,或由多层绝缘材料层所组成,例如包括但不限于是布拉格反射层。第一反射层34的材料可为铝或铝合金,其中阻挡层38设置于第二反射层36上且不具有导电性。阻挡层38的材料可与第二反射层36具相同材料且可在同一道制程成型。第二电极42设置于阻挡层38上,并以电性连接于磊晶结构30的第二半导体层306。发光元件9与上述的发光元件7的主要不同之处在于,发光元件9的第二反射层36进一步延伸至磊晶结构30的第一半导体层302上,使得第二反射层36在投影方向D上的投影面积A1大于发光层304在投影方向D上的投影面积A4且第一反射层34在投影方向D上的投影面积A2与发光层304在投影方向D上的投影面积A4的比值小于30%,其中在一实施例中,第一反射层34在投影方向D上的投影面积A2与发光层304在投影方向D上的投影面积A4的比值小于10%。藉此,可再进一步增加整体的反射面积。
综上所述,本发明在第一反射层上增设第二反射层,且使第二反射层延伸至黏着层上,使得第二反射层的投影面积大于第一反射层的投影面积。换言之,本发明可先将化学性质较为活泼的第一反射层(例如,银或银合金)设置在黏着层上的一定范围内,以避免第一反射层在后续制程中因温度提高而流窜至磊晶结构。接着,再将化学性质较不活泼的第二反射层(例如,非银金属或非银合金)设置于第一反射层上,且使第二反射层延伸至黏着层上。藉此,本发明即可利用第二反射层有效增加整体的反射面积,进而提升发光元件的整体出光效率。
最后应说明的是:以上各实施例仅用以说明本发明的技术方案,而非对其限制;尽管参照前述各实施例对本发明进行了详细的说明,本领域的普通技术人员应当理解:其依然可以对前述各实施例所记载的技术方案进行修改,或者对其中部分或者全部技术特征进行等同替换;而这些修改或者替换,并不使相应技术方案的本质脱离本发明各实施例技术方案的范围。

Claims (9)

1.一种发光元件,其特征在于,包括:
一磊晶结构,包括一基板、一第一半导体层、一发光层以及一第二半导体层;
一透明导电层,设置于所述磊晶结构的所述第二半导体层上;
一第一反射层,设置于所述透明导电层上;
一布拉格反射层,设置于所述第一反射层上且延伸至所述透明导电层上,自所述布拉格反射层朝所述磊晶结构的方向定义一投影方向,所述布拉格反射层在所述投影方向上的投影面积分别大于所述第一反射层及所述黏着层在所述投影方向上的投影面积;
一阻挡层,设置于所述布拉格反射层上且不具有导电性,所述阻挡层的材料包括金属或合金;
一第一电极,电性连接于所述第一半导体层;以及
一第二电极,经由所述第一反射层及所述透明导电层电性连接于所述第二半导体层。
2.一种发光元件,其特征在于,包括:
一磊晶结构,包括一基板、一第一半导体层、一发光层以及一第二半导体层;
一透明导电层,设置于所述磊晶结构的所述第二半导体层上;
一第一反射层,设置于所述透明导电层上;
一布拉格反射层,设置于所述透明导电层上且延伸至所述磊晶结构之所述第一半导体层上,自所述布拉格反射层朝所述磊晶结构的方向定义一投影方向,所述布拉格反射层在所述投影方向上的投影面积分别大于所述第一反射层及所述黏着层在所述投影方向上的投影面积;
一阻挡层,设置于所述布拉格反射层上且不具有导电性,所述阻挡层的材料包括金属或合金;
一第一电极,电性连接于所述第一半导体层;以及
一第二电极,经由所述第一反射层及所述透明导电层电性连接于所述第二半导体层。
3.根据权利要求1或2所述的发光元件,其特征在于,所述第一反射层的材料为银或银合金。
4.根据权利要求1或2所述的发光元件,其特征在于,所述第一反射层的材料为铝或铝合金。
5.根据权利要求1或2所述的发光元件,其特征在于,所述布拉格反射层的反射率大于所述阻挡层的反射率。
6.根据权利要求1或2所述的发光元件,其特征在于,所述布拉格反射层的反射率大于或等于80%。
7.根据权利要求1或2所述的发光元件,其特征在于,所述阻挡层的材料为铂、金、钨、钛或钛钨合金。
8.根据权利要求1或2所述的发光元件,其特征在于,所述透明导电层为金属薄膜或氧化铟锡。
9.根据权利要求1或2所述的发光元件,其特征在于,所述布拉格反射层的侧表面与所述阻挡层的侧表面切齐。
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