TW201631799A - 發光元件 - Google Patents

發光元件 Download PDF

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TW201631799A
TW201631799A TW105104614A TW105104614A TW201631799A TW 201631799 A TW201631799 A TW 201631799A TW 105104614 A TW105104614 A TW 105104614A TW 105104614 A TW105104614 A TW 105104614A TW 201631799 A TW201631799 A TW 201631799A
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conductive
layer
sub
conductive layer
electrode
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TW105104614A
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郭祐禎
蘭彥廷
黃靖恩
賴騰憲
康凱舜
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新世紀光電股份有限公司
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Publication of TW201631799A publication Critical patent/TW201631799A/zh

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Abstract

一種發光元件，包括一磊晶結構、一第一電極、一導電層以及一第二電極。磊晶結構包括一基板、一第一半導體層 、一發光層以及一第二半導體層。第一電極設置於第一半導體層上。導電層設置於第二半導體層上，且導電層包括一第一導電區域以及一第二導電區域，其中第一導電區域之電阻小於第二導電區域之電阻。第二電極設置於導電層上，且第二電極具有一延伸部，其中延伸部朝第一電極之方向延伸，且第一導電區域與延伸部至少部分重疊。

Description

發光元件
本發明關於一種發光元件，尤指一種可有效提高發光效率之發光元件。
請參閱第1圖，第1圖為先前技術之發光元件1的俯視示意圖。如第1圖所示，發光元件1包括一磊晶結構10、一N型電極12、一導電層14以及一P型電極16，其中磊晶結構10包括一N型半導體層18以及一P型半導體層20。一般而言，磊晶結構10另包括一發光層（未顯示），介於N型半導體層18與P型半導體層20之間。N型電極12設置於N型半導體層18上，導電層14設置於P型半導體層20上，且P型電極16設置於導電層14上。P型電極16具有一延伸部160，且延伸部160朝N型電極12之方向延伸。
當在N型電極12與P型電極16之間施加電壓時，電流自P型電極16流入，流經P型半導體層20、發光層、N型半導體層18，最後經N型電極12流出。然而，電流在流動過程中會趨向於尋找電阻最小的路徑。如第1圖所示，P型電極16之延伸部160較接近N型電極12，因此延伸部160的導電路徑的總電阻比P型電極16其它位置的總電阻小，使得大部分的電流會選擇總電阻較小的延伸部160進行流動，進而在延伸部160造成電流聚集（current crowding）效應。換言之，電流會趨向於從更接近N型電極12的位置進入N型半導體層18，因此在距離N型電極12較遠的位置流入發光層的電流強度較小，其發光強度不及接近於N型電極12的區域。此會造成發光元件1的發光亮度分佈不均勻，進而降低發光元件1的發光效率。
本發明提供一種可有效增加電流分佈均勻性之發光元件，以解決上述問題。
根據一實施例，本發明之發光元件包括一磊晶結構、一第一電極、一導電層以及一第二電極。磊晶結構包括一基板、一第一半導體層 、一發光層以及一第二半導體層。第一電極設置於第一半導體層上。導電層設置於第二半導體層上，且導電層包括一第一導電區域以及一第二導電區域，其中第一導電區域之電阻小於第二導電區域之電阻。第二電極設置於導電層上，且第二電極具有一延伸部，其中延伸部朝第一電極之方向延伸，且第一導電區域與延伸部至少部分重疊。
在一實施例中，第一導電區域之厚度大於第二導電區域之厚度。
在一實施例中，第一導電區域之摻雜濃度大於第二導電區域之摻雜濃度。
綜上所述，本發明係將導電層劃分為電阻較小的第一導電區域與電阻較大的第二導電區域，且使電阻較小的第一導電區域與第二電極之延伸部至少部分重疊。藉此，即可使自第二電極流入的電流均勻擴散（current spreading），進而提高發光元件的發光效率。需說明的是，本發明可使第一導電區域之厚度大於第二導電區域之厚度，或使第一導電區域之摻雜濃度大於第二導電區域之摻雜濃度，以使第一導電區域之電阻小於第二導電區域之電阻，視實際應用而定。
關於本發明之優點與精神可以藉由以下的發明詳述及所附圖式得到進一步的瞭解。
請參閱第2圖以及第3圖，第2圖為根據本發明第一實施例之發光元件3的俯視示意圖，第3圖為第2圖中的發光元件3沿X-X線的剖面示意圖。如第2圖與第3圖所示，發光元件3包括一磊晶結構30、一第一電極32、一導電層34以及一第二電極36，其中磊晶結構30包括一基板38、一第一半導體層40、一發光層42以及一第二半導體層44。於實際應用中，發光元件3可為發光二極體（light emitting diode，LED）。第一半導體層40位於基板38上，發光層42位於第一半導體層40上，且第二半導體層44位於發光層42上。基板38之材料可為藍寶石，但不以此為限。第一電極32設置於第一半導體層40上，導電層34設置於第二半導體層44上，且第二電極36設置於導電層34上。第一半導體層40 可為N型半導體層（例如，N型氮化鎵層），且第二半導體層44可為P型半導體層（例如，P型氮化鎵層）。此時，第一電極32即為N型電極，且第二電極36即為P型電極。導電層34之材料可為銦錫氧化物（Indium Tin Oxide，ITO）、氧化鋅（ZnO）或其它導電材料。此外，發光元件3可另包括一電流阻擋層46（current block layer，CBL），設置於導電層34與磊晶結構30之間，用以提供電流阻擋作用，以改善發光元件3的發光效率和輸出光功率。
導電層34包括一第一導電區域A1以及一第二導電區域A2，其中第一導電區域A1之厚度T1大於第二導電區域A2之厚度T2，使得第一導電區域A1之電阻小於第二導電區域A2之電阻。於此實施例中，導電層34可包括一第一子導電層340以及一第二子導電層342，其中第一子導電層340於基板38上之投影面積小於第二子導電層342於基板38上之投影面積。如第3圖所示，第二子導電層342設置於第二半導體層44上，且第一子導電層340設置於第二子導電層342上，使得第一子導電層340與第二子導電層342重疊之區域形成第一導電區域A1，且未與第一子導電層340重疊之第二子導電層342形成第二導電區域A2。需說明的是，第一子導電層340與第二子導電層342之材料可相同或不同，視實際應用而定。
如第2圖所示，第二電極36具有一延伸部360，其中延伸部360朝第一電極32之方向延伸，且第一導電區域A1與延伸部360至少部分重疊。由於第一導電區域A1之電阻小於第二導電區域A2之電阻，因此，自第二電極36流入的電流即會均勻擴散流經第二半導體層44、發光層42、第一半導體層40，最後經第一電極32流出，減緩延伸部360尾端（亦即，延伸部360靠近第一電極32之一端）所造成的電流聚集（current crowding）效應，進而提高發光元件3的發光效率。
在一實施例中，第一導電區域A1於平行延伸部360之方向上的長度L可大於或等於第二電極36於平行延伸部360之方向上的總長度Lt的1/2，以增進電流均勻擴散（current spreading）。在一實施例中，第一導電區域A1之一邊緣E可介於延伸部360之中心C與第一電極32之間，以增進電流均勻擴散。
配合第3圖，請參閱第4圖，第4圖為根據本發明第二實施例之發光元件5的剖面示意圖。發光元件5與上述的發光元件3的主要不同之處在於，發光元件5之第一子導電層340設置於第二半導體層44上，且第二子導電層342設置於第一子導電層340與第二半導體層44上，使得第一子導電層340與第二子導電層342重疊之區域形成第一導電區域A1，且未與第一子導電層340重疊之第二子導電層342形成第二導電區域A2。換言之，本發明可根據實際應用將第一子導電層340設置於第二子導電層342上或將第一子導電層340設置於第二半導體層44與第二子導電層342之間。
配合第3圖，請參閱第5圖，第5圖為根據本發明第三實施例之發光元件7的剖面示意圖。發光元件7與上述的發光元件3的主要不同之處在於，發光元件7之導電層34'具有相同厚度的第一導電區域A1與第二導電區域A2，其中第一導電區域A1之摻雜濃度大於第二導電區域A2之摻雜濃度，使得第一導電區域A1之電阻小於第二導電區域A2之電阻。舉例而言，若導電層34之材料為ITO，上述之摻雜濃度可定義為ITO所摻雜的錫(Sn)的濃度。換言之，本發明可使第一導電區域A1之厚度T1大於第二導電區域A2之厚度T2，或使第一導電區域A1之摻雜濃度大於第二導電區域A2之摻雜濃度，以使第一導電區域A1之電阻小於第二導電區域A2之電阻，視實際應用而定。
配合第2圖，請參閱第6圖至第9圖，第6圖為根據本發明第四實施例之發光元件9的俯視示意圖，第7圖為根據本發明第五實施例之發光元件11的俯視示意圖，第8圖為根據本發明第六實施例之發光元件13的俯視示意圖，第9圖為根據本發明第七實施例之發光元件15的俯視示意圖。本發明之第一子導電層340除了可設計成如第2圖所示之圖案外，亦可設計成如第6圖至第9圖所示之圖案。換言之，本發明可根據實際應用將第一子導電層340設計成如第2圖與第6圖至第9圖所示之圖案，或其它圖案，不以第2圖所示之圖案為限。於第6圖至第9圖所示之實施例中，本發明亦可根據實際應用將第一子導電層340設置於第二子導電層342上（如第3圖所示）或將第一子導電層340設置於第二半導體層44與第二子導電層342之間（如第4圖所示）。
綜上所述，本發明係將導電層劃分為電阻較小的第一導電區域與電阻較大的第二導電區域，且使電阻較小的第一導電區域與第二電極之延伸部至少部分重疊。藉此，即可使自第二電極流入的電流均勻擴散，進而提高發光元件的發光效率。需說明的是，本發明可使第一導電區域之厚度大於第二導電區域之厚度，或使第一導電區域之摻雜濃度大於第二導電區域之摻雜濃度，以使第一導電區域之電阻小於第二導電區域之電阻，視實際應用而定。 以上所述僅為本發明之較佳實施例，凡依本發明申請專利範圍所做之均等變化與修飾，皆應屬本發明之涵蓋範圍。
1、3、5、7、9、11、13、15‧‧‧發光元件
10、30‧‧‧磊晶結構
12‧‧‧N型電極
14、34、34'‧‧‧導電層
16‧‧‧P型電極
18‧‧‧N型半導體層
20‧‧‧P型半導體層
32‧‧‧第一電極
36‧‧‧第二電極
38‧‧‧基板
40‧‧‧第一半導體層
42‧‧‧發光層
44‧‧‧第二半導體層
46‧‧‧電流阻擋層
160、360‧‧‧延伸部
340‧‧‧第一子導電層
342‧‧‧第二子導電層
A1‧‧‧第一導電區域
A2‧‧‧第二導電區域
C‧‧‧中心
E‧‧‧邊緣
L、Lt‧‧‧長度
T1、T2‧‧‧厚度
X-X‧‧‧剖面線
第1圖為先前技術之發光元件的俯視示意圖。 第2圖為根據本發明第一實施例之發光元件的俯視示意圖。 第3圖為第2圖中的發光元件沿X-X線的剖面示意圖。 第4圖為根據本發明第二實施例之發光元件的剖面示意圖。 第5圖為根據本發明第三實施例之發光元件的剖面示意圖。 第6圖為根據本發明第四實施例之發光元件的俯視示意圖。 第7圖為根據本發明第五實施例之發光元件的俯視示意圖。 第8圖為根據本發明第六實施例之發光元件的俯視示意圖。 第9圖為根據本發明第七實施例之發光元件的俯視示意圖。
3‧‧‧發光元件
30‧‧‧磊晶結構
34‧‧‧導電層
38‧‧‧基板
40‧‧‧第一半導體層
42‧‧‧發光層
44‧‧‧第二半導體層
340‧‧‧第一子導電層
342‧‧‧第二子導電層
A1‧‧‧第一導電區域
A2‧‧‧第二導電區域
T1、T2‧‧‧厚度

Claims (10)

  1. 一種發光元件，包括： 一磊晶結構，包括一基板、一第一半導體層、一發光層以及一第二半導體層； 一第一電極，設置於該第一半導體層上； 一導電層，設置於該第二半導體層上，該導電層包括一第一導電區域以及一第二導電區域，該第一導電區域之電阻小於該第二導電區域之電阻；以及 一第二電極，設置於該導電層上，該第二電極具有一延伸部，該延伸部朝該第一電極之方向延伸，該第一導電區域與該延伸部至少部分重疊。
  2. 如請求項1所述之發光元件，其中該第一導電區域之厚度大於該第二導電區域之厚度。
  3. 如請求項1所述之發光元件，其中該導電層包括一第一子導電層以及一第二子導電層，該第一子導電層於該基板上之投影面積小於該第二子導電層於該基板上之投影面積，該第一子導電層與該第二子導電層重疊之區域形成該第一導電區域，未與該第一子導電層重疊之該第二子導電層形成該第二導電區域。
  4. 如請求項3所述之發光元件，其中該第二子導電層設置於該第二半導體層上，且該第一子導電層設置於該第二子導電層上。
  5. 如請求項3所述之發光元件，其中該第一子導電層設置於該第二半導體層上，且該第二子導電層設置於該第一子導電層與第二半導體層上。
  6. 如請求項1所述之發光元件，其中該第一導電區域之摻雜濃度大於該第二導電區域之摻雜濃度。
  7. 如請求項6所述之發光元件，其中該導電層的材料為銦錫氧化物。
  8. 如請求項1所述之發光元件，其中該第一導電區域於平行該延伸部之方向上的長度大於或等於該第二電極於平行該延伸部之方向上的總長度的1/2。
  9. 如請求項1所述之發光元件，其中該第一導電區域之一邊緣介於該延伸部之中心與該第一電極之間。
  10. 如請求項1所述之發光元件，更包括一電流阻擋層設置於該導電層與該磊晶結構之間。
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