201238081 六、發明說明： 【發明所屬之技術領域】 本發明係有關於一種發光二極體，特別係有關於一 發光—極體的電極設計。 【先前技術】 對於高功率發光二極體而言，電流擴散能力扮演著很 重要的腳色。尤其在高功率發光二極體的應用方面，在較 大的電流密度操作下，不均勻的電流分布極易造成電極 燒毀。 、 因此，發光二極體的電極設計著重在於使電流均勻分 布。在習知技術中，係使用電極金屬延伸線的設計使電流 有效的均勻擴散。然而，電極金屬延伸線的末端存在尖端 放電的問題，因此易造成靜電擊穿而導致晶片損毁。電極 金屬延伸線能有效幫助電流擴散，卻也會造成光吸收問 題，反而造成光性衰退的問題。所以，係利用縮小電極金 屬延伸線的面積，以有效減少吸光問題。然而，電極金屬 延伸線的面積縮小則必須增加金屬線厚度來平衡電流密 度，如此卻造成較高的生產成本，且隨著電極金屬線面積 的縮小，靜電擊穿及電極燒毁的問題會更加嚴重。 在此技術領域中，有需要一種發光二極體的電極設 計，其可在不增加電極面積及電極厚度前提下，能有效幫 助電流擴散以及防止靜電擊穿及電極燒毁。 4 201238081 【發明内容】 、有鑑於此，本發明-實施例係提供—種發光二極體， 上述發光二極體包括_基板；—發光二極體結構，設置於 亡„ 一第—電極，設置於上述發光二極體結構的 ::表：上；—第二電極’設置於上述發光二極體結構 第一表面上，一指狀導電層，鄰接於上述第一電極， 且延伸5又置於上述第一表面上，其中上述指狀導電層呈有 遠離於上述第-電極的—末端部分；以及—靜電保護層， 設置於上述指狀導電層和上述發光二極體結構之間或上述 第一電極和上述發光二極體結構之間。 【實施方式】 以下以各實施例詳細說明並伴隨著圖式說明之範例， 做為本發明之參考依據。在圖式或說明#描述中，相似或 相同之部分皆使用相同之圖號。且在圖式中，實施例之形 狀或是厚度可擴大，並以簡化或是方便標示。再者，圖式 中各兀件之部分將以分別描述說明之，值得注意的是，圖 中未繪示或描述之元件，為所屬技術領域中具有通常知識 者所=的形式，另外，特定之實施例僅為揭示本發明使用 之特定方式，其並非用以限定本發明。 本發明實施例係提供一種發光二極體，特別是操作電 流密度大於ΙΑ/mW的高功率垂直式發光二極體㈨迚 power Vertica】 light emitting di〇de)，其於設置於發光面上的 電極金屬延伸層和發光二極體結構之間或電極本身和發光 201238081 一極體結構之間设置有一層靜電保護層，以同時且有有效 幫助電流擴散以及防止靜電擊穿及電極燒毁等優點。第la 圖為本發明實施例之發光二極體500的上視圖。第lb圖為 本發明不同實施例之發光二極體500的剖面圖。第“〜化 圖顯示的發光二極體係以一氮化鎵（GaN)系高功率垂直式 藍光發光二極體做為本發明實施例。如第la〜lb圖所示， 本發明實施例之發光二極體500可包括一基板200。在本 發明一實施例中，基板200可包括一半導體基板。一發光 一極體結構202，設置於基板200上。在本發明一實施例 中，基板200和發光二極體結構202之間可設置有一緩衝 層（圖未顯示）。在本發明一實施例中，發光二極體結構 可由具有p型-η型接面(pnjuncti〇n)的半導體層構成，其包 括至少兩個電性連接的一 p型半導體層和一 η型半導體 層，以及ρ型半導體層和η型半導體層之間的一發光半導 體層’用於發光二極體結構202之半導體層可包括氮化鎵 (GaN)、氮化鎵銦（GaInN)等材質。在本發明一實施例中。 在本實施例中，發光二極體結構2〇2 型半導體層沿著垂直基板2〇〇表面的方向^疊+#：=二 極體結構202的ρ型半導體層的一第一表面2〇3h型半 導體層的一第二表面205兩者位於發光二極體結構2〇2的 相對側’其中第-表面203為發光二極體結構2〇2的一發 光面，第二表面205為發光二極體結構202的一背面。 如第la〜lb圖所示’至少一第一電極2〇4和一第二電 極2〇8 ’分別設置於發光二極體結構202的一第一表面2〇3 上牙表φ 205上。意即第一電極2〇4和第二電極期 6 201238081 二極體結構2G2的發光面和背面，所以如第 ^ π上視圖僅能相第-電極2G4。在本發明一實 :體二:Γ…為p型電極，其電性咖^ 一極體、、、。構202的p型丰基辦恳 _ 型雷“而第二電極208可為η 層。〃電性連接至發光二極體結構202的η型半導體 '首如弟1b圖所示，至少一指狀導電層210，每一個指狀 ^電層训係鄰接於—第一電極綱，且沿著^ =03方向延伸設置於第-表面加上。在本發明!實 =中’嶋電層210可做為第一電極m，的一延伸 二曰狀導電層210的設置可以使發光二極體500在 =㈣流能更均㈣分布。在本發明—實施例中，為了 不影響發光二極體_的發光效率，指狀導電層210 ^又相使其寬度係遠小於第—電極204的寬度且具有万 =的長度，以使發光二極體·的電流有效的ς勻擴 有效減少吸光問題。在本㈣—實芦 具有遠離於第一電極2。4的一末端部分 導電層210的延伸方向和形狀並不限於本實施例。201238081 VI. Description of the Invention: [Technical Field] The present invention relates to a light-emitting diode, and more particularly to an electrode design of a light-emitting body. [Prior Art] For high-power light-emitting diodes, current spreading capability plays an important role. Especially in the application of high-power light-emitting diodes, uneven current distribution can easily cause electrode burnout under large current density operation. Therefore, the electrode design of the light-emitting diode focuses on evenly distributing the current. In the prior art, the design of the electrode metal extension line is used to effectively spread the current evenly. However, there is a problem of tip discharge at the end of the electrode metal extension line, which is liable to cause electrostatic breakdown and cause wafer damage. Electrode Metal extension lines can effectively help the current to diffuse, but it also causes light absorption problems, which in turn causes problems of optical degradation. Therefore, the area of the metal extension wire is reduced to effectively reduce the light absorption problem. However, if the area of the electrode metal extension line is reduced, the thickness of the metal line must be increased to balance the current density, which results in higher production cost, and as the area of the electrode metal line is reduced, the problem of electrostatic breakdown and electrode burnout is even more problematic. serious. In this technical field, there is a need for an electrode design of a light-emitting diode that can effectively help current diffusion and prevent electrostatic breakdown and electrode burnout without increasing electrode area and electrode thickness. 4 201238081 SUMMARY OF THE INVENTION In view of the above, the present invention provides a light-emitting diode, the light-emitting diode includes a substrate, and a light-emitting diode structure is disposed on the first electrode. The second electrode is disposed on the first surface of the light emitting diode structure, and a finger conductive layer is adjacent to the first electrode, and the extension 5 is disposed on the first surface of the light emitting diode structure. And disposed on the first surface, wherein the finger conductive layer has an end portion away from the first electrode; and an electrostatic protection layer disposed between the finger conductive layer and the light emitting diode structure or Between the first electrode and the above-mentioned light-emitting diode structure. [Embodiment] Hereinafter, the examples described in detail with reference to the accompanying drawings will be referred to as a reference for the present invention. In the description or description The same reference numerals are used for similar or identical parts, and in the drawings, the shape or thickness of the embodiment may be expanded and simplified or conveniently indicated. Furthermore, parts of the drawings will be It is to be noted that the components that are not shown or described in the drawings are in the form of those of ordinary skill in the art, and the specific embodiments are merely illustrative of the particular manner in which the invention is used. The present invention is not intended to limit the present invention. Embodiments of the present invention provide a light emitting diode, in particular, a high power vertical light emitting diode (9) operating a current density greater than ΙΑ/mW (power) It is provided with an electrostatic protection layer between the electrode metal extension layer and the light emitting diode structure disposed on the light emitting surface or between the electrode itself and the light emitting body of the 201238081, so as to effectively help the current to spread and prevent static electricity. The present invention is a top view of a light-emitting diode 500 according to an embodiment of the present invention. Figure lb is a cross-sectional view of a light-emitting diode 500 according to a different embodiment of the present invention. The light-emitting diode system shown in the figure is a gallium nitride (GaN)-based high-power vertical blue light-emitting diode as an embodiment of the present invention. As shown in FIGS. 1a to 1b, the light emitting diode 500 of the embodiment of the present invention may include a substrate 200. In an embodiment of the invention, the substrate 200 may include a semiconductor substrate. A light emitting diode structure 202 is disposed on the substrate 200. In an embodiment of the invention, a buffer layer (not shown) may be disposed between the substrate 200 and the LED structure 202. In an embodiment of the invention, the LED structure may be composed of a semiconductor layer having a p-type-n junction, including at least two electrically connected p-type semiconductor layers and an n-type The semiconductor layer, and a light-emitting semiconductor layer between the p-type semiconductor layer and the n-type semiconductor layer. The semiconductor layer for the light-emitting diode structure 202 may include gallium nitride (GaN), gallium indium nitride (GaInN), or the like. . In an embodiment of the invention. In this embodiment, the LED structure of the LED structure 2〇2 type semiconductor layer is stacked along the surface of the vertical substrate 2〇〇+#:= a first surface of the p-type semiconductor layer of the diode structure 202〇 A second surface 205 of the 3h-type semiconductor layer is located on the opposite side of the light-emitting diode structure 2〇2, wherein the first surface 203 is a light-emitting surface of the light-emitting diode structure 2〇2, and the second surface 205 is illuminated. A back side of the diode structure 202. The at least one first electrode 2〇4 and the second electrode 2〇8' are disposed on the first surface 2〇3 of the light-emitting diode structure 202 on the tooth surface φ205, respectively. That is, the first electrode 2〇4 and the second electrode period 6 201238081 The light-emitting surface and the back surface of the diode structure 2G2, so that the first electrode 2G4 can only be phased as the π-top view. In the present invention, the body 2: Γ ... is a p-type electrode, and its electrical coffee is a polar body, a, and. The second electrode 208 can be an η layer. The n-type semiconductor electrically connected to the light-emitting diode structure 202 is as shown in the first figure 1b, at least one finger The conductive layer 210, each of the finger-like layers is adjacent to the first electrode, and is disposed on the first surface along the ^=03 direction. In the present invention, the actual layer is 210. The arrangement of an extended dipole-shaped conductive layer 210, which can be used as the first electrode m, can make the light-emitting diode 500 more uniformly distributed in the (four) flow. In the present invention, in order not to affect the light-emitting diode The luminous efficiency of the body _, the finger-shaped conductive layer 210 ^ has a width which is much smaller than the width of the first electrode 204 and has a length of 10,000 = so that the current of the light-emitting diode is effective and uniform to reduce the light absorption Problem: In the present invention, the extending direction and shape of the conductive layer 210 having a distal end portion away from the first electrode 2. 4 are not limited to the embodiment.
Hlb圖所示，本發明—實麵係特別提供至少 =_，設置於發光二極體結構加的發光面（第一 2^2之門Ϊ黛且Γ置於指狀導電層210和發光二極體結構 之間或ΐι極2G4和發光二極體結構2G2之間。兴 例來說，靜電保護層214係設置於第—f極2Q4和" 極體結構202之間且接觸第一電極2〇4;而靜電 係設置於指狀導電層21G和該發光二極體結構撕^間， 201238081As shown in the Hlb diagram, the present invention - the solid surface is particularly provided with at least = _, disposed on the light-emitting surface of the light-emitting diode structure (the first 2^2 threshold and placed on the finger-shaped conductive layer 210 and the light-emitting two The polar body structure is between the ΐι pole 2G4 and the light emitting diode structure 2G2. In an example, the electrostatic protection layer 214 is disposed between the first f pole 2Q4 and the " pole body structure 202 and contacts the first electrode 2〇4; and the electrostatic system is disposed between the finger conductive layer 21G and the light-emitting diode structure, 201238081
且接觸指狀導電層2ιη & 士山A 體，在高電 =摔乍，^^ ，具有’制錢作電流密度大於 部分m，甚至二:=4能的指狀導電層210的末端 電場最大處，因而會產生邊角部分218都會成為 極體，燒毁電極處擊穿發光二 ., 更土先—極體500損毀無法使用。 吟 《明―實施例的靜電保護層214或216可以有 效防止發光二極體5〇〇在較 電層糊末端部分212或是大第==下= 題。在本發明-實施例中’靜電二 或2Ϊ6可包括介電材料。在本發明實施例中，靜 =層214以16可有不同的形狀或 & 導電層训的末端部分212或是第—電極2(Μ的 218與其下的發光二極體結構加直接接觸即可。如第 la〜lb圖所示’在本發明一實施例中，用以防止 204的邊角部分218產生靜電擊穿問題的靜電保護層214 的至少—個邊緣’例如邊緣22G，係設計凸出於第一電極 204相鄰於指狀導電層21〇的邊緣219。另外，在本發明一 實施例中，用以防止指狀導電層21G的末端部分扣 靜電擊穿問題的靜電保護層21δ的至少—個邊緣係設計凸 出於指狀導電層210的末端部分212的邊緣。 ^本發明實施例係提供一種發光二極體，其於設置在發 =上的指狀導電層的末端部分和發光二極體結構之間， 或是電極和發光二極體結構之間設置有至少—靜電保護 曰可有政避免指狀導電層的末端部分，或是發光面上的 8 201238081 體結構之間產生尖端放電而擊穿發光二極 因此，本每明貫施例的發光二極體同時具有有效幫助 電流擴散以及防正靜電擊穿及電極燒毁等優點。因此 的f光二極體可廣為應用於高功率發光二極 ::疋Γ電流密度大於1AW的高功率垂直式發 ^-極體’在不增加電極面積及電極厚度前提下，靜電保 =層的設計可以確保在高電流密度操作下能防止電極的燒 雖然本發明已以實施例揭露如上，然其並非用以限定 明’任何㈣此技藝者，在不脫離本發 當可作些許之更動與潤飾，因二 範圍當視後附之申請專利範圍所界定為準。之保。又 201238081 【圖式簡單說明】 第la圖為本發明實施例之發光二極體的上視圖。 第lb圖本發明不同實施例之發光二極體的剖面圖。 【主要元件符號說明】 500〜發光二極體； 200~基板； 202〜發光二極體結構； 203〜第一表面； 204〜第一電極； 205〜第二表面； 208〜第二電極； 210〜指狀導電層； 212〜末端部分； 214、216〜靜電保護層； 218〜邊角部分 219、220〜邊緣。And contacting the finger-shaped conductive layer 2ιη & Shishan A body, in the high electric=wrestling, ^^, having the end electric field of the finger-shaped conductive layer 210 having a current density greater than a part m, or even a second:=4 energy At the maximum, the corner portion 218 will become the pole body, and the burnt electrode will break through the light. 2. The soil-first body 500 is damaged and cannot be used.吟 The electrostatic protection layer 214 or 216 of the embodiment can effectively prevent the light-emitting diode 5 from being in the end portion 212 of the electric layer paste or the large ===. In the present invention-embodiment, 'electrostatic two or two Ϊ6' may include a dielectric material. In the embodiment of the present invention, the static layer 214 may have a different shape or the end portion 212 of the conductive layer or the first electrode 2 (the 218 of the crucible is directly in contact with the underlying LED structure) As shown in FIGS. 1a to 1b, in an embodiment of the present invention, at least one edge of the electrostatic protection layer 214 for preventing the electrostatic breakdown of the corner portion 218 of the 204, such as the edge 22G, is designed. The first electrode 204 is adjacent to the edge 219 of the finger-shaped conductive layer 21A. In addition, in an embodiment of the invention, the electrostatic protection layer for preventing the end portion of the finger-shaped conductive layer 21G from being electrostatically breakdownd At least one edge design of 21δ protrudes from the edge of the end portion 212 of the finger conductive layer 210. ^Inventive embodiments provide a light emitting diode at the end of a finger conductive layer disposed on the hair== Between the portion and the light-emitting diode structure, or between the electrode and the light-emitting diode structure, at least - electrostatic protection can be used to avoid the end portion of the finger-shaped conductive layer, or the light-emitting surface of the 8 201238081 body structure Producing a tip discharge between Breaking through the light-emitting diodes, the light-emitting diodes of the present embodiment have the advantages of effectively helping current diffusion and preventing positive electrostatic breakdown and electrode burning. Therefore, the f-light diode can be widely applied to high power. Light-emitting diode:: High-power vertical hair-emitting body with a current density greater than 1AW. Without increasing the electrode area and electrode thickness, the electrostatic protection layer can ensure the electrode can be prevented under high current density operation. Although the present invention has been disclosed in the above embodiments, it is not intended to limit the art of any of the art, and may be modified and retouched without departing from the present invention. The present invention is defined by the scope of the present invention. Fig. 1a is a top view of a light-emitting diode according to an embodiment of the present invention. [Main component symbol description] 500~ light emitting diode; 200~ substrate; 202~ light emitting diode structure; 203~ first surface; 204~ first electrode; 205~ second surface; 208~ second electrode; 2 10~ finger conductive layer; 212~ end portion; 214, 216~ electrostatic protection layer; 218~ corner portion 219, 220~ edge.