CN101694859B - Light emitting diode with large power and manufacturing method thereof - Google Patents
Light emitting diode with large power and manufacturing method thereof Download PDFInfo
- Publication number
- CN101694859B CN101694859B CN2009102016836A CN200910201683A CN101694859B CN 101694859 B CN101694859 B CN 101694859B CN 2009102016836 A CN2009102016836 A CN 2009102016836A CN 200910201683 A CN200910201683 A CN 200910201683A CN 101694859 B CN101694859 B CN 101694859B
- Authority
- CN
- China
- Prior art keywords
- type electrode
- wire
- type
- lead
- direction lead
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 7
- 239000004065 semiconductor Substances 0.000 claims description 56
- 150000004767 nitrides Chemical class 0.000 claims description 38
- 238000000034 method Methods 0.000 claims description 23
- 238000001259 photo etching Methods 0.000 claims description 10
- 239000000758 substrate Substances 0.000 claims description 10
- 238000002360 preparation method Methods 0.000 claims description 7
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 6
- 238000005516 engineering process Methods 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- 238000000137 annealing Methods 0.000 claims description 3
- 238000002161 passivation Methods 0.000 claims description 3
- 238000004062 sedimentation Methods 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 230000000694 effects Effects 0.000 abstract description 10
- 238000005286 illumination Methods 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 description 4
- 230000006378 damage Effects 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 208000027418 Wounds and injury Diseases 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000010862 gear shaping Methods 0.000 description 1
- 208000014674 injury Diseases 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000013517 stratification Methods 0.000 description 1
Images
Landscapes
- Led Devices (AREA)
Abstract
The invention discloses a light emitting diode with large power. The pattern of a P-type electrode is in an 'E' shape with an upward opening; the vertical part of the 'E'-shaped P-type electrode is uniformly provided with horizontal branches being vertically crossed with the vertical part; an N-type electrode is shaped like a strip and is vertically arranged in a gap of the opening of the 'E'-shaped P-type electrode; the top end of the N-type electrode is designed slightly wide; and a pattern formed by the P-type electrode and the N-type electrode is symmetrical left and right. The invention also discloses a manufacturing method of the light emitting diode, comprising the steps of firstly scribing and then manufacturing a device structure. In the invention, current in the light emitting diode can be uniformly diffused, the occurrence of current concentration is greatly reduced, the contact resistance is reduced, the reliability of devices is increased, and the service life, illumination efficiency and antistatic effect of the device are improved.
Description
Technical field
The present invention relates to a kind of light-emitting diode, especially a kind of large-power light-emitting diodes.The invention still further relates to a kind of manufacture method of large-power light-emitting diodes.
Background technology
Along with the appearance of super brightness power-type LED and enriching of LED color, the application of LED is also expanded to special lighting fields such as traffic, large scale display by initial indication, and is actively pushing forward to general lighting.The subject matter that exists in the development of large-power LED has big electric current to inject decrease in efficiency down, and light extraction efficiency is low, and caloric value is big, the life-span is low etc.The structure of great power LED can be divided into positive assembling structure, inverted structure, vertical stratification and film LED etc.Produced powerful producer at present in batches, adopted maximum basic positive assembling structures that is still, other structures are in laboratory stage basically.
Light-emitting diode is generally the structure that on substrates such as sapphire, has stacked gradually n type nitride semiconductor layer, active layer, P type nitride semiconductor layer.In addition, on P type nitride semiconductor layer, dispose P type electrode, on n type nitride semiconductor layer, dispose N type electrode.The part that this structure normally utilizes technologies such as photoetching and etching to remove P type nitride semiconductor layer, active layer and n type nitride semiconductor layer, preparation N type electrode on the n type nitride semiconductor layer that exposes.Carry out grinding back surface at last and draw and split, obtain single chips.Publication number is the structure that CN1870307A and CN101075656A all disclose a kind of iii-nitride light emitting devices, and the figure of existing light-emitting diodes pipe electrode.
But, there is more problem in the above-mentioned normal flow to high-power chip:
1. high-power chip grinding thickness smaller power chip is thick, therefore in growth course stored stress more difficulty discharge following process yield step-down;
2. semiconductor layer is after etching; The SQW part of the active layer of sidewall just can expose to the open air out; N type nitride semiconductor layer, active layer, the p type nitride semiconductor layer of sidewall all can receive damage in various degree simultaneously; This etching injury causes the inefficacy of LED probably, has a strong impact on the life-span of LED;
3. the chip configuration design is main with the gear shaping shape, and electric current has raising in the diffusion of N/P layer, but fails that a best of breed is being arranged aspect diffusion effect and the shaded effect;
4. electric current has the point discharge phenomenon generation on the line stretcher top, can be influential to the ESD (antistatic effect) of chip, and powerful electric current is generally 350mA, and this influence is more obvious.
Summary of the invention
Technical problem to be solved by this invention provides a kind of large-power light-emitting diodes and preparation method thereof; Make that electric current can evenly spread in the light-emitting diode; Reducing the current concentration phenomenon significantly takes place; And the reduction contact resistance increases device reliability, improves life-span, luminous efficiency and antistatic effect.
For solving the problems of the technologies described above, a kind of large-power light-emitting diodes of the present invention comprises a nonconducting substrate, and is formed at the semiconductor epitaxial layers on the said substrate, and this semiconductor epitaxial layers is the ray structure of light-emitting diode; Said semiconductor epitaxial layers comprises n type nitride semiconductor layer at least, is positioned at the active layer on the n type nitride semiconductor layer and is positioned at the P type nitride semiconductor layer on the active layer; It is characterized in that: also comprise P type electrode and N type electrode on the high power LED chip.
Said P type electrode contacts with said P type nitride semiconductor layer, and said P type electrode comprises that 1 first direction lead-in wire goes between with 3 second direction lead-in wires and by said first direction lead-in wire and said second direction and connects into " E " font structure; Article 3, the parallel to each other and spaced set of said second direction lead-in wire, 3 homonymies that said second direction goes between and all intersects vertically with said first direction lead-in wire and all be positioned at said first direction lead-in wire; Intersect with a said second direction lead-in wire respectively at the two ends of said first direction lead-in wire and at the intersection location place at the two ends of said first direction lead-in wire a P type electrode pad is set respectively, another said second direction lead-in wire is crossing with midway of said first direction lead-in wire.
Said N type electrode contacts with said N type silicon nitride semiconductor layer; Comprise two bar shaped lead-in wires parallel with each said second direction lead-in wire; The bar shaped of said N type electrode lead-in wire is separately positioned in the space of said " E " font P type electrode opening, and is respectively arranged with a N type electrode pad at the end away from said first direction lead-in wire of the bar shaped lead-in wire of each said N type electrode; The figure left-right symmetric that said P type electrode and N type electrode are formed.
The invention also discloses the manufacture method of above-mentioned large-power light-emitting diodes, its technical scheme is to comprise the steps:
Step 4 utilizes sedimentation to generate SiO
2And utilize photoetching process and engraving method to keep the SiO of " E " font P type electrode area
2, make that chip technology is accomplished after, the SiO under " E " font P type electrode
2On all directions than the wide 5 μ m of " E " font P type electrode～10 μ m;
Step 7 is utilized N
2The O plasma carries out Passivation Treatment to the surface of said structure;
Step 8, preparation bar shaped N type electrode on n type nitride semiconductor layer prepares " E " font P type electrode on transparency conducting layer simultaneously;
Step 9, step 7 body structure surface prepare SiO
2Diaphragm, and expose the pad of N type electrode and P type electrode.
The invention enables that electric current can evenly spread in the light-emitting diode, reduce the generation of current concentration phenomenon significantly, and reduced contact resistance, increased device reliability, improved life-span, luminous efficiency and antistatic effect.
Description of drawings
Below in conjunction with accompanying drawing and embodiment the present invention is done further detailed explanation:
Fig. 1 is the sketch map of large-power light-emitting diodes electrode pattern of the present invention;
Fig. 2 is the partial enlarged drawing of large-power light-emitting diodes electrode pattern of the present invention.
Embodiment
The invention discloses a kind of large-power light-emitting diodes; As shown in Figure 1, embodiment of the invention large-power light-emitting diodes comprises a nonconducting substrate; And being formed at the semiconductor epitaxial layers on the said substrate, this semiconductor epitaxial layers is the ray structure of light-emitting diode; Said semiconductor epitaxial layers comprises n type nitride semiconductor layer at least, is positioned at the active layer on the n type nitride semiconductor layer and is positioned at the P type nitride semiconductor layer on the active layer.Also comprise P type electrode and N type electrode on the power led chip.
Said P type electrode contacts with said P type nitride semiconductor layer, and said P type electrode comprises 1 and 3 second direction lead-in wire 2 of 1 first direction lead-in wire and connects into " E " font structure by said first direction lead-in wire 1 and said second direction lead-in wire 2; Article 3, said second direction 2 parallel to each other and spaced sets that go between, 3 said second direction lead-in wires 2 all intersect vertically with said first direction lead-in wire 1 and all are positioned at the homonymy of said first direction lead-in wire 1; Intersect with a said second direction lead-in wire 2 respectively at the two ends of said first direction lead-in wire 1 and at the intersection location place at the two ends of said first direction lead-in wire 1 a P type electrode pad 3 is set respectively, the midway of another said second direction lead-in wire 2 and said first direction lead-in wire 1 intersects.
Said N type electrode contacts with said N type silicon nitride semiconductor layer; Comprise two with each said second direction 2 parallel bar shapeds lead-in wire 5 that goes between; The bar shaped of said N type electrode lead-in wire 5 is separately positioned in the space of said " E " font P type electrode opening, and is respectively arranged with a N type electrode pad 6 at the end away from said first direction lead-in wire 1 of the bar shaped lead-in wire 5 of each said N type electrode; The figure left-right symmetric that said P type electrode and N type electrode are formed.
The P type electrode of embodiment of the invention large-power light-emitting diodes also connects negative voltage through a N type electrode pad 6 respectively through each bar shaped lead-in wire 5 that two said P type electrode pads 3 insert forward voltage, said N type electrode.With respect to the structure that needs only a P type electrode pad and a N type electrode pad of the prior art, the structure of two said P type electrode pads 3 and two said N type electrode pads 6 can reduce concentrating of electric current, and electric current is better spread out.
The structure setting of " E " font of said P type electrode; Electric current is spread out on P type electrode more; The electric current of wherein flowing through in each said second direction lead-in wire 2 can flow and is diffused into the said P type nitride semiconductor layer that contact with each said second direction lead-in wire 2 respectively to go between 2 direction of second direction, and each bar shaped that enters into contiguous said N type electrode through said semiconductor epitaxial layers at last goes between 5.
The said first direction of each that is provided with on the said second direction lead-in wire 2 branch lead-in wire 4 can be incorporated into the electric current on the said second direction lead-in wire 2 with said second direction and go between on the 2 vertical directions; And this branch current is diffused into the said P type nitride semiconductor layer that contact with each said first direction branch lead-in wire 4, each bar shaped that enters into contiguous said N type electrode through said semiconductor epitaxial layers at last goes between 5.
The structure of embodiment of the invention large-power light-emitting diodes helps the even diffusion of electric current, has reduced the generation of current concentration phenomenon significantly, can improve efficient, brightness and the life-span of light-emitting diode.
The end of said N type electrode is that the end near said first direction lead-in wire 1 of the bar shaped lead-in wire 6 of each said N type electrode is provided with those widened sections, and said those widened sections prevents the effect of point discharge effect, strengthens antistatic effect.
Said electrode and chip edge leave safe distance, and this safe distance is 40～70 μ m, and optimum value is 60 μ m, thereby make the electrically stable of light-emitting diode.
As shown in Figure 2; On the said P type electrode horizontal branch be said first direction branch lead-in wire 4 end to the N type electrode nearest with it be bar shaped lead-in wire 6 apart from a, with this end be that the go between ratio of 2 distance b of said second direction is 1.6 to this branch and said P type electrode junction.This distance proportion is beneficial to the electric current diffusion most.
Among the present invention, zone, said N type electrode pad 6 place be a diameter be semicircle and of 70 μ m～120 μ m long be 70 μ m～120 μ m, wide is that the rectangle of 35 μ m～60 μ m is formed, the diameter limit of said semicircle overlaps with the long limit of said rectangle; Zone, P type electrode pad 3 place is that a diameter is the circle of 70 μ m～120 μ m.As shown in Figure 1, zone, said N type electrode pad 6 places is 100 μ m for the optimum value of semicircle diameter and the long limit c of rectangle, and the optimum value of broadside is 50 μ m; The optimum value d of zone, P type electrode pad 3 places diameter of a circle is 90 μ m, and the optimum value of N type contact conductor length e is 950 μ m.
The invention also discloses a kind of manufacture method of above-mentioned large-power light-emitting diodes, comprise the steps:
Step 4 utilizes sedimentation to generate SiO
2And utilize photoetching process and engraving method to keep the SiO of " E " font P type electrode area
2, make that chip technology is accomplished after, the SiO under " E " font P type electrode
2On all directions than the wide 5 μ m of " E " font P type electrode～10 μ m;
Step 7 is utilized N
2The O plasma carries out Passivation Treatment to the surface of said structure;
Step 8, preparation bar shaped N type electrode on n type nitride semiconductor layer prepares " E " font P type electrode on transparency conducting layer simultaneously;
Step 9, step 7 body structure surface prepare SiO
2Diaphragm, and expose the pad of N type electrode and P type electrode.
In sum, large-power light-emitting diodes of the present invention and preparation method thereof makes that electric current can evenly spread in the light-emitting diode; Reduce the generation of current concentration phenomenon significantly; And reduced contact resistance, increased device reliability, improved life-span, luminous efficiency and antistatic effect.
Claims (10)
1. a large-power light-emitting diodes comprises a nonconducting substrate, and is formed at the semiconductor epitaxial layers on the said substrate, and this semiconductor epitaxial layers is the ray structure of light-emitting diode; Said semiconductor epitaxial layers comprises n type nitride semiconductor layer at least, is positioned at the active layer on the n type nitride semiconductor layer and is positioned at the P type nitride semiconductor layer on the active layer; It is characterized in that: also comprise P type electrode and N type electrode on the high power LED chip;
Said P type electrode contacts with said P type nitride semiconductor layer, and said P type electrode comprises that 1 first direction lead-in wire goes between with 3 second direction lead-in wires and by said first direction lead-in wire and said second direction and connects into " E " font structure; Article 3, the parallel to each other and spaced set of said second direction lead-in wire, 3 homonymies that said second direction goes between and all intersects vertically with said first direction lead-in wire and all be positioned at said first direction lead-in wire; Intersect with a said second direction lead-in wire respectively at the two ends of said first direction lead-in wire and at the intersection location place at the two ends of said first direction lead-in wire a P type electrode pad is set respectively, another said second direction lead-in wire is crossing with midway of said first direction lead-in wire;
Article 3, all equally spacedly respectively on the said second direction lead-in wire be provided with many first direction branches lead-in wires, the said first direction of each on the said second direction lead-in wire of each bar branch lead-in wire all intersects vertically with each said second direction lead-in wire;
Said N type electrode contacts with said N type silicon nitride semiconductor layer; Comprise two bar shaped lead-in wires parallel with each said second direction lead-in wire; The bar shaped of said N type electrode lead-in wire is separately positioned in the space of said " E " font P type electrode opening, and is respectively arranged with a N type electrode pad at the end away from said first direction lead-in wire of the bar shaped lead-in wire of each said N type electrode; The figure left-right symmetric that said P type electrode and N type electrode are formed.
2. large-power light-emitting diodes according to claim 1; It is characterized in that; Zone, said N type electrode pad place be a diameter be semicircle and of 70 μ m～120 μ m long be 70 μ m～120 μ m wide be that the rectangle of 35 μ m～60 μ m is formed, the diameter limit of said semicircle overlaps with the long limit of said rectangle; Zone, P type electrode pad place is that a diameter is the circle of 70 μ m～120 μ m.
3. large-power light-emitting diodes according to claim 2 is characterized in that, zone, said N electrode pad place be the diameter semicircle that is 100 μ m and one long be 100 μ m wide be that the rectangle of 50 μ m is formed; Zone, P electrode pad place is a circle that diameter is 90 μ m.
4. large-power light-emitting diodes according to claim 1 is characterized in that, the end of said N type electrode is provided with those widened sections.
5. large-power light-emitting diodes according to claim 1 is characterized in that said electrode and chip edge leave safe distance.
6. large-power light-emitting diodes according to claim 5 is characterized in that, said safe distance is 40 μ m～70 μ m.
7. large-power light-emitting diodes according to claim 6 is characterized in that, said safe distance is 60 μ m.
8. large-power light-emitting diodes according to claim 1; It is characterized in that; The end of horizontal branch is to the distance of the N type electrode nearest with it on the said P type electrode, with this end be 1.3～1.8 to the ratio of the distance of this branch and said P type electrode junction.
9. large-power light-emitting diodes according to claim 8 is characterized in that, on the said P type electrode end of horizontal branch to the distance of the N type electrode nearest with it, with this end be 1.6 to the ratio of the distance of this branch and said P type electrode junction.
10. the manufacture method like any described large-power light-emitting diodes of claim 1～9 is characterized in that, comprises the steps:
Step 1 prepares semiconductor epitaxial layers on nonconducting substrate, comprise n type nitride semiconductor layer at least, be positioned at the active layer on the n type nitride semiconductor layer and be positioned at the P type nitride semiconductor layer on the active layer;
Step 2, utilizing photoetching process and laser scribing means on the LED epitaxial wafer, to form width is that 3 μ m～20 μ m, the degree of depth are the raceway groove of 10 μ m～50 μ m, these raceway grooves are divided into whole epitaxial wafer and led chip lattice of a size;
Step 3 utilizes photoetching process and lithographic technique that the step 2 resulting structures is carried out local etching, forms the N type mesa structure of led chip, and the n type nitride semiconductor layer of making N type electrode area is exposed;
Step 4 utilizes sedimentation to generate SiO
2And utilize photoetching process and engraving method to keep the SiO of " E " font P type electrode area
2, make that chip technology is accomplished after, the SiO under " E " font P type electrode
2On all directions than the wide 5 μ m of " E " font P type electrode～10 μ m;
Step 5 has a SiO said
2On the P type table top of figure except that other zones edge 1 μ m～10 μ m form transparency conducting layers;
Step 6 is carried out 300～700 ℃ annealing in process to said transparency conducting layer;
Step 7 is utilized N
2The O plasma carries out Passivation Treatment to the surface of said structure;
Step 8, preparation bar shaped N type electrode on n type nitride semiconductor layer prepares " E " font P type electrode on transparency conducting layer simultaneously;
Step 9, step 7 body structure surface prepare SiO
2Diaphragm, and expose the pad of N type electrode and P type electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009102016836A CN101694859B (en) | 2009-10-15 | 2009-10-15 | Light emitting diode with large power and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009102016836A CN101694859B (en) | 2009-10-15 | 2009-10-15 | Light emitting diode with large power and manufacturing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101694859A CN101694859A (en) | 2010-04-14 |
| CN101694859B true CN101694859B (en) | 2012-03-21 |
Family
ID=42093812
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2009102016836A Expired - Fee Related CN101694859B (en) | 2009-10-15 | 2009-10-15 | Light emitting diode with large power and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101694859B (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW201238081A (en) * | 2011-03-08 | 2012-09-16 | Lextar Electronics Corp | Light emitting diode |
| CN104465919B (en) * | 2013-09-16 | 2017-05-24 | 上海蓝光科技有限公司 | Light-emitting diode and manufacturing method thereof |
| CN106972089B (en) * | 2017-04-14 | 2023-09-22 | 华南理工大学 | Straw-shaped N electrode and vertical structure LED chip |
| JP6912962B2 (en) * | 2017-07-26 | 2021-08-04 | 旭化成株式会社 | Nitride semiconductor light emitting element, ultraviolet light emitting module |
-
2009
- 2009-10-15 CN CN2009102016836A patent/CN101694859B/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CN101694859A (en) | 2010-04-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN100394621C (en) | Gallium nitride based LED chip and its manufacturing method | |
| US8334542B2 (en) | Light emitting diode and manufacturing method thereof | |
| KR101150861B1 (en) | Light emitting diode having multi-cell structure and its manufacturing method | |
| CN102738334B (en) | Light emitting diode with current spreading layers and manufacturing method for light emitting diode | |
| CN102315353A (en) | Inverted integrated LED and production method thereof | |
| CN101694859B (en) | Light emitting diode with large power and manufacturing method thereof | |
| US9859331B2 (en) | Preparation method for high-voltage LED device integrated with pattern array | |
| CN204144307U (en) | A kind of LED chip | |
| TWI538184B (en) | Light-emitting diode array | |
| TW201312741A (en) | Solid state light source module and array thereof | |
| TW201216520A (en) | Semiconductor light emitting device | |
| CN103618042B (en) | A kind of semiconductor light-emitting diode chip | |
| CN102856454B (en) | LED epitaxial layer | |
| CN102473804B (en) | P-contact layer for III phosphide semiconductor luminescent device | |
| US10249773B2 (en) | Light emitting diode and fabrication method thereof | |
| CN105161605B (en) | A kind of GaN base LED core piece preparation method of achievable efficient encapsulation | |
| CN201918385U (en) | High-power GaN (gallium nitride) based light emitting diode | |
| WO2020224599A1 (en) | Integrated unit diode chip | |
| CN101276832A (en) | LED chip with micro space connected in series through zinc oxide transparent electrodes and manufacturing process thereof | |
| CN102544048A (en) | High-power GaN-base light-emitting diode and manufacturing method thereof | |
| CN203134800U (en) | Step type light emitting diode raising high-voltage LED process yield | |
| CN203589085U (en) | Semiconductor LED chip | |
| CN203481264U (en) | White light LED chip | |
| CN201689906U (en) | Gallium-nitride-based high-brightness light emitting diode with projection structures | |
| CN201266611Y (en) | Tree-shaped GaN-based LED chip electrode |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20120321 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |