TWM318195U - Structure of electrode of light-emitting diode - Google Patents

Description

M318195 AOC-06-23-TW VIII. New description: [New technical field] This creation is about a kind of light-emitting diode, especially an n-type electrode with conductive extension line 'and its material is transparent with p-type electrode The same composition of the conductive layer. [Prior Art] In recent years, many talented women have focused on 70 kinds of light-emitting materials formed by nitride-based semiconductors, such as gallium nitride (GaΝ), nitride scale (A 1 GaN), gasification recording (InGaN). ), and aluminum indium gallium nitride (A1 InGaN) and the like. Most of such light-emitting element semiconductors are grown on a non-conductive sapphire substrate, and are different from other light-emitting elements in that a conductive substrate is used. Since the sapphire substrate is an insulator, the electrode cannot be directly formed on the substrate. Therefore, the electrode must be directly contacted with the p-type semiconductor layer and the n-type semiconductor layer to complete the fabrication of such a light-emitting device. Please refer to the first and second figures. The first figure shows a top view of a conventional light-emitting diode die, and the second figure is a cross-sectional view of the 2 - 2 hatching in the first figure. An insulating base layer (1 〇) formed of sapphire, a gallium nitride growth layer (1 1 ) formed on the insulating base layer (1 〇), and a nitrogen formed on the gallium nitride growth layer (1 1 ) a gallium buffer layer (12), an n-type gallium nitride contact layer (13) formed on the buffer layer (12), and an n-type formed on the gallium nitride contact layer (13) An aluminum gallium nitride tie layer (14), an indium gallium nitride multiple quantum well light-emitting layer (15) formed on the η plastic aluminum nitride gallium tie layer (14), formed on the light-emitting layer (15) a p-type aluminum nitride gallium bond layer (16), a p-type gallium nitride contact layer (17) formed on the germanium-type aluminum gallium nitride tie layer (16), formed in p-type nitride Gallium contact layer (1 -5 -

M318195 AOC-06-23-TW 7), a transparent indium tin oxide conductive layer (i 8), one of which is removed by etching, and a portion of the p-type gallium nitride contact layer (17) is exposed. a -P type Ti/Al formed on the exposed portion of the p-type gallium nitride contact layer (17),

Ti/Au or Cr/Au p electrode (2 〇), and the p electrode (2 (6) is in contact with the moon-transparent conductive layer (18), and since the sapphire is not conductive, the light-emitting diode must be properly shafted to 11 Wei a gallium contact layer (13), and then a type 1 Ti/Akn electrode (19) is formed on the n-type gallium nitride contact layer (13), and is disposed on the argon gallium contact layer (丄3). Extending around the circumference of the :: η electrode (1 9) electrically connected - conductive extension line (2 2 >. This type of 2 is found in the publication of the 4th 5 ii 8 patents; its main use § The human wire (2 2 ) forms an ohmic contact with the n-type gallium nitride layer (13), and the current sent by the electrode (19) is more evenly distributed in the entire light-emitting diode prior art, the conductive The extension line (2 2) is selected for the material; the η-type electrode (1 9 ) is of the same type and is composed of a metal such as a metal such as Dings/Bagua; the alloy is so high. The reflective property is easy to produce light-shielding and light-conducting effects and affects the external light-emitting efficiency; furthermore, such a conductive extension line (22) consisting of genus is prone to the loss of instantaneous discharge; Therefore, there is still room for improvement. [New content] The main purpose of this creation is to provide a kind of light-emitting diode. The electric wire of the light-emitting diode is composed of non-metal. Reduce the light guide effect of the n-type exposed area to increase the luminous efficiency, and have a current spreading effect on a large area (Power Γh 1 n^ a Γ Uhlp), and further improve the surface adhesion effect and improve the product. Reliability. -6-

M318195 AOCO6-23-TW Another object of the present invention is to provide an electrode structure of a light-emitting diode whose 'n electrode conductivity is lower than that of a metal material, and has an effect of being less prone to instantaneous discharge. In order to achieve the above object, the technical means adopted by the present invention comprises: an insulating substrate; a first electrical semiconductor layer on the insulating substrate; a light emitting layer 'on the first electrical semiconductor layer and exposed Another portion of the first electrical semiconductor layer;

a second electrical semiconductor layer is disposed on the light emitting layer; a transparent conductive layer is disposed on the second electrical semiconductor layer; and a first electrical electrode is disposed on the exposed region of the first electrical semiconductor layer And a first-electrode electrode, which is not disposed on a portion of the transparent conductive layer # and is exposed on the surface, and is electrically connected to the second electrical semiconductor layer;

Wherein the first electrical electrode has a portion extending around the second electrical semiconductor layer, and the surrounding portion is made of lanthanum tin oxide (ΙΤ1) and transparent conductive oxide (TCQ). [Embodiment]: First, please refer to the third and fourth figures, wherein the third figure reveals the top view of the present embodiment, and the fourth figure is along the 4th to 4th line of the third figure. The cross-sectional schematic view formed by the present invention generally comprises: a semiconductor laminate (sac-insulating substrate (30), which is included in a material composed of sapphire (sapph 3). ), LiGa〇3 and LiAl materials; for stacking the epitaxial structures in sequence, k) 'which at least includes:

M318195 AOC-06-23-TW A first electrical semiconductor layer (3 1 ) is located on the insulating substrate (3 ο ), which may include a material group selected from the group consisting of GaN, A 1 GaN, and I nGaN. A material of the group having a first electrical contact layer and a tie layer, and may include, but not limited to, a crystal growth layer and a buffer layer. An illuminating layer (32) is disposed on the first electrical semiconductor layer (31) and exposes another portion of the first electrical semiconductor layer (3 i ), and the exposed region (36) is disposed on the surface A first electrical electrode (42) is an η electrode in this embodiment, but is not limited thereto. a second electrically conductive semiconductor layer (3 3 ) is disposed on the luminescent layer ( 3 2 ) and has a second electrically binding layer and a contact layer; and the second electrically conductive layer ( 3 3 ) may be selected from the group consisting of Ga N and A1 I a GaN a material constituting a group of materials; a transparent conductive layer (34) on the second electrical semiconductor layer (3 3 ), comprising a layer selected from indium tin oxide (I τ 〇) and a transparent conductive oxide (Transparent Conductive 〇xide, TC〇) a material in a group of materials; a second electrical electrode (4 1 ), in this embodiment a p-electrode, is disposed in a portion of the transparent conductive layer (34) And being exposed on the surface (35), which is electrically connected to the second electrical semiconductor layer (33) to form a Schottky contact due to the second electrical electrode (4丄) There is substantially no current generated directly under the ), and the current sent from the p-electrode (41) flows through the transparent conductive layer (3 4 ) to the light-emitting layer (15) to generate a light-emitting effect. The main feature of the present invention is that the first electrical electrode (42) has a surrounding portion (4〇) extending around the second electrical semiconductor layer (3 3 ). In this embodiment, the portion has an opening. The u-shaped body, and the material surrounding the portion (40) can be made of, for example, indium tin oxide (I-butyl) and transparent conductive oxide-8-

M318195 AOC-06-23-TW (T C Ο) is a material in the group of materials; it is not the same metal material as the η electrode. In this way, the present invention as a surrounding portion (40) of the extended wire can reduce the light guide effect of the n-type exposed area to enhance the external light-emitting efficiency; and has a current spreading effect on the large-area (Power Chip). Furthermore, the surface effect can be improved and the reliability of the product can be improved. Moreover, the conductive wire of the extended wire is lower than that of the metal material, and is less prone to instantaneous discharge and improves the electrostatic resistance of the chip. Thereby, the lack of conventional light-emitting diodes can be improved. Referring to the fifth embodiment, the second embodiment of the present invention is substantially the same as the first embodiment, and the difference is only that the surrounding portion (4 Q ) is a ring body having no opening. In the third embodiment shown in the sixth figure, the first electrode (42) and the first electrode (41) 5 are placed on the diagonal of the crystal grains. Therefore, regardless of the type of presentation, the surrounding part (4〇) has the same effect enhancement as before. In summary, the structure revealed by this creation is nothing but the past, and it can achieve the expected effect, and has the ability to be used for production. It is in full compliance with (4) patent requirements, and the praying committee will grant a patent. Inspire innovation, no morality and salty. However, the above-mentioned drawings and descriptions are only for those who are familiar with this art, and the implementation of the case according to the spirit of the case should still be included in the patent application. ^ or equivalent change 9-

M318195 AOCO6-23-TW [Simple description of the diagram] The first picture is a top view of the conventional light-emitting diode. The second figure is a cross-sectional view of section 2-1 in the first figure. The third drawing is a plan view of the first embodiment of the present creation. The fourth figure is a sectional view of section 4-4 in the third figure. The fifth drawing is a plan view of the second embodiment of the present creation. The sixth drawing is a plan view of the third embodiment of the present creation. [Description of main component symbols] (30) Insulating substrate (31) First electrical semiconductor layer (32) Light-emitting layer (33) Second electrical semiconductor layer (34) Transparent conductive layer (3 5) surface ( 3 6) exposed area (40) surrounding part (41) second electrical electrode (42) first electrical electrode 10-

Claims (1)

M318195 AOC-06-23-TW IX. Patent application scope: 1 · An electrode structure of a light-emitting diode, comprising: an insulating substrate; a first electrical semiconductor layer on the insulating substrate; a light-emitting layer, a first electrical semiconductor layer on the first electrical semiconductor layer and exposing another portion; a second electrical semiconductor layer on the light-emitting layer; a transparent conductive layer located in the second electrical a first electrical electrode disposed on a surface of the exposed region of the first electrical semiconductor layer; and a second electrical electrode disposed on a portion of the transparent conductive layer and exposed And electrically connected to the second electrical semiconductor layer; wherein the first electrical electrode has a surrounding portion extending around the second electrical semiconductor layer, and the surrounding portion is made of indium tin oxide (I) TO) and a material of a group of materials consisting of transparent conductive oxide (TCO). The electrode structure of the light-emitting diode according to claim 1, wherein the transparent conductive layer comprises a layer selected from indium tin oxide (I TO) and transparent conductive oxygen (Transparent Conductive Oxide, TC) 〇) Any of these materials. 3. The electrode structure of the light-emitting diode according to claim 1, wherein the surrounding portion of the first electrical electrode comprises a U-shaped body having a portion having an opening. 11 M318195 AOC-06-23-TW 4 The electrode structure of the light-emitting diode according to claim 1, wherein the surrounding portion of the first electrical electrode includes a circle without an opening. 5. The electrode of the light-emitting diode according to claim 1, wherein the first electrode and the second electrode are disposed on a diagonal line of the crystal grain.