CN1275264C - Structure of transient over-voltage protector element - Google Patents
Structure of transient over-voltage protector element Download PDFInfo
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- CN1275264C CN1275264C CN 01118128 CN01118128A CN1275264C CN 1275264 C CN1275264 C CN 1275264C CN 01118128 CN01118128 CN 01118128 CN 01118128 A CN01118128 A CN 01118128A CN 1275264 C CN1275264 C CN 1275264C
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- signal electrode
- variable impedance
- insulating barrier
- voltage protector
- composition layer
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- 230000001052 transient effect Effects 0.000 title claims abstract description 62
- 230000001012 protector Effects 0.000 title claims description 48
- 239000000463 material Substances 0.000 claims abstract description 18
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- 239000000203 mixture Substances 0.000 claims description 54
- 230000004888 barrier function Effects 0.000 claims description 36
- 239000000758 substrate Substances 0.000 claims description 34
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 claims description 15
- 239000000919 ceramic Substances 0.000 claims description 7
- 239000011521 glass Substances 0.000 claims description 7
- 229910044991 metal oxide Inorganic materials 0.000 claims description 6
- 150000004706 metal oxides Chemical class 0.000 claims description 6
- 238000002955 isolation Methods 0.000 abstract description 3
- 238000009413 insulation Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 25
- 238000000034 method Methods 0.000 description 5
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- 238000010276 construction Methods 0.000 description 3
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- 239000012212 insulator Substances 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
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- 230000001681 protective effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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Abstract
The present invention discloses the structure of a transient overvoltage protection element, which uses the contact between the edge of an isolation signal electrode of an insulation layer and adjustable resistance materials so as to eliminate the point discharge effect existing on the edge of the signal electrode. Therefore, the transient overvoltage born by the transient overvoltage protection element is increased. The structure of the transient overvoltage protection element disclosed by the present invention is suitable for an electronic component.
Description
Technical field
The present invention relates to a kind of structure of transient over-voltage protector element, the structure of transient over-voltage protector element that particularly a kind of tip that utilizes insulating barrier isolation signals electrode edge contacts with functional material.
Background technology
Recently the transient over-voltage protector element that grows up is that variable impedance composition is arranged in the component structure, by means of variable impedance composition signal electrode is electrically connected with grounding electrode.The characteristic of these variable impedance compositions is to change its resistance value in suitable voltage range.Wherein, in the time of in signal electrode is in normal operating voltage range, variable impedance composition is a high impedance state, makes that in the normal working voltage scope voltage on the signal electrode and electric current can operate as normal and can not be imported into grounding electrode.Yet; when unusual pulse occurring on the signal electrode; the characteristic of variable impedance composition can be transformed into low impedance state; this time; the energy of pulse will and be discharged by signal electrode process transient over-voltage protector element importing grounding electrode; therefore, the voltage of signal electrode can be limited in allowed limits, realizes the purpose of protective circuit by means of the characteristic of variable impedance composition.
The known existing various ways of transient over-voltage protector element of making of variable impedance composition, wherein a kind of is single layer structure, and has been widely used on the market.The element of single layer structure has bigger volume usually, and its advantage is to bear very big energy pulses such as lightning etc.Another kind is a sandwich construction, and the advantage of sandwich construction is to have less component size, and element is originally as the surface adhering form.
Please refer to Fig. 1, known overvoltage protection element structure mainly is based on a substrate 100, and a grounding electrode 102a, a variable impedance composition layer 104 and a signal electrode 102b are set on the substrate 100.Wherein, variable impedance composition layer 104 part are covered on the substrate 100, and another part then is covered on the grounding electrode 102a, and a signal electrode 102b part is covered on the substrate 100, another part then is covered on the variable impedance composition layer 104, is a laminated construction.
Please refer to Fig. 2, United States Patent (USP) the 6th, 013, No. 358 disclosed overvoltage protection element structure mainly is based on glass or ceramic substrate, the density of glass or ceramic substrate 200 is greater than 3.5g/cm
3And on glass or the ceramic substrate 200 pair of electrodes 202 is set, comprise a signal electrode 202a and a grounding electrode 202b, one variable impedance composition layer 204 also is set between signal electrode 202a and the grounding electrode 202b, variable impedance composition layer 204 covers on substrate 100 and part signal electrode 202a and the grounding electrode 202b, is used for the overvoltage on the signal electrode 202a being imported grounding electrode 202b and discharging.
Please refer to Fig. 3, when signal electrode 102b forms, no matter make with thin film technique or thick film technology, all attenuation gradually of brim-portion thickness at signal electrode 102b, the tangent line and the horizontal angle that occur signal electrode 102b in edge are the situation of acute angle, and point discharge very easily takes place when transient overvoltage occurs this acute angle, and energy is concentrated in discharge herein, so the transient overvoltage that bears of element will be restricted, and then influence the characteristic of element integral body.
Summary of the invention
Therefore; the objective of the invention is to propose a kind of structure of transient over-voltage protector element; wherein utilize insulator that the edge and the variable impedance composition layer of signal electrode are isolated; improving the phenomenon of signal electrode point discharge in the transient over-voltage protector element, and then the transient overvoltage that element can bear improved.
The objective of the invention is to propose a kind of structure of transient over-voltage protector element; wherein utilize insulator that the edge and the variable impedance composition layer of signal electrode are isolated; forcing pulse energy to be dispersed on the contact-making surface of signal electrode and variable impedance composition layer, and can concentrations do not cause the damage of material in the zonule of electrode edge.
For reaching above-mentioned purpose of the present invention; a kind of structure of transient over-voltage protector element is proposed; its structure is for using an insulating barrier, is used for contacting between isolation signals electrode edge and the variable impedance composition layer, and then the point discharge effect of erasure signal electrode edge existence.As previously mentioned, when signal electrode forms, no matter make of thin film technique or thick film technology, all attenuation gradually of brim-portion thickness at signal electrode, and the tangent line and the horizontal angle that signal electrode occur in edge present acute angle, point discharge very easily takes place when transient overvoltage occurs this acute angle situation and energy are concentrated in discharge herein, so the transient overvoltage that bears of element will be restricted.The present invention utilizes insulator that the edge and the variable impedance composition layer of signal electrode are isolated, and the transient overvoltage that can make transient over-voltage protector element to bear improves.
For above-mentioned purpose of the present invention, feature and advantage can be become apparent, a preferred embodiment cited below particularly, and be described in detail below in conjunction with the accompanying drawings.
Description of drawings
Fig. 1 and Fig. 2 represent the structural profile schematic diagram of known transient over-voltage protector element respectively;
Fig. 3 is the partial enlarged drawing that the signal electrode edge contacts with variable impedance composition among Fig. 1;
Fig. 4 to Fig. 7 represents the making schematic flow sheet according to the transient over-voltage protector element of the preferred embodiments of the present invention;
Fig. 8 is the partial enlarged drawing that the signal electrode edge contacts with variable impedance composition among Fig. 7;
Fig. 9 is the structural representation according to the transient over-voltage protector element of another preferred embodiment of the present invention.
Embodiment
The main purpose of transient over-voltage protector element is that the protection electronic equipment is not injured by pulse.Because the transient energy of pulse is very big, general electronic equipment can't bear so big energy impact, therefore needs the protection of transient over-voltage protector element.So the key property of transient over-voltage protector element is the impact that must be able to bear pulse, therefore, must be at this characteristics design transient over-voltage protector element.
Please refer to Fig. 4 to Fig. 7, they are the making schematic flow sheets according to the transient over-voltage protector element of one embodiment of the present invention.At first please refer to Fig. 4, a substrate 300 is provided, substrate 300 for example is glass substrate or ceramic substrate.Form at least one grounding electrode 302 on substrate 300, this grounding electrode 302 for example is to form with deposit or sputter mode, makes pattern by micrography, etching process again.
Then please refer to Fig. 5, form a variable impedance composition layer 304 on an end of grounding electrode 302, the material of variable impedance composition layer 304 is for example for evenly to be blended in the material that contains adhesive with conductor powder and semiconductor powder, and this class material has been published in the many pieces of United States Patent (USP)s, its patent No. is respectively 3,685, and 026,3,685,028,4,977,357,5,068,634,5,260,848,5,294,374,5,393,596 and 5,807,509 etc.
Then please refer to Fig. 6, form an insulating barrier 306 (can be advanced low-k materials such as Si oxide, nitrogen oxide, metal oxide), insulating barrier 306 covers the marginal portion of variable impedance composition layer 304, make insulating barrier 306 be frame structure, but the structure of insulating barrier 306 is not limited to frame structure, can change to some extent along with the profile of variable impedance composition layer 304.In addition, insulating barrier 306 will come out the middle body of variable impedance composition layer 304, is electrically connected in order to the signal electrode 308 (please refer to Fig. 7) with follow-up formation.
Then please be simultaneously with reference to Fig. 7 and Fig. 8, form a signal electrode 308, signal electrode 308 is on variable impedance composition layer 304, and control its edge and be positioned at above the insulating barrier 306, and whole piece signal electrode 308 for example extends out to substrate 300 by the part that contacts with variable impedance composition layer 304.Can know by Fig. 8 and to find out, the edge of signal electrode 308 accurately can be controlled on the insulating barrier 306 (can be advanced low-k materials such as Si oxide, nitrogen oxide, metal oxide) by means of micrography, etching process, make signal electrode 308 marginal portions the phenomenon of point discharge can not occur, discharge is to carry out through signal electrode 308 contact-making surface with variable impedance composition layer 304, so the erasure signal electrode 308 edge tip problem of discharging effectively.
Please refer to Fig. 9 at last, Fig. 9 is the structural representation according to the transient over-voltage protector element of another preferred embodiment of the present invention.Transient over-voltage protector element mainly comprises a substrate 300, a grounding electrode 302, a variable impedance composition layer 304, an insulating barrier 306 (can be advanced low-k materials such as Si oxide, nitrogen oxide, metal oxide), and a signal electrode 308.Wherein, grounding electrode 302 is arranged on the substrate 300 with signal electrode 308, insulating barrier 306 is arranged on the substrate 300 between signal electrode 308 and the grounding electrode 302, variable impedance composition layer 304 is arranged on insulating barrier 306 tops between signal electrode 308 and the grounding electrode 302, and variable impedance composition layer 304 is electrically connected with signal electrode 308 and grounding electrode 302.
Please refer to Fig. 8 equally; insulating barrier 306 covers the edge of signal electrode 308; and variable impedance composition layer 304 is electrically connected with signal electrode 308 and grounding electrode 302; make the transient over-voltage protector element problem of erasure signal electrode edge point discharge effectively, and can avoid causing the permanent damage of protection component material.
The structure of transient over-voltage protector element can combine with all kinds of electronic components among Fig. 7 and Fig. 8.Because protection component itself can bear higher pulse shock, makes that its protection to electronic component is more effective, has not only increased the performance of electronic component, also can further improve the useful life of element.In addition, can protect the variable impedance composition of protection component itself, therefore not only can improve the performance of protection component, and can improve the life-span that protection component uses by the formation of insulating barrier.
In sum, structure of transient over-voltage protector element of the present invention has following advantage at least:
1. transient over-voltage protector element of the present invention is when running into pulse generation; the edge of signal electrode only touches insulating barrier (can be advanced low-k materials such as Si oxide, nitrogen oxide, metal oxide) in the structure; so can be through the marginal discharge of signal electrode; but discharge, so the problem of erasure signal electrode edge point discharge effectively through the contact-making surface of signal electrode and variable impedance composition layer.
2. structure of transient over-voltage protector element of the present invention can not cause the permanent damages of material because of the pulse energy concentrations at the signal electrode fringe region; pulse energy has obtained restriction; only can evenly pass through through the contact-making surface of signal electrode and variable impedance composition layer; not only reduce pulse to the probability that the variable impedance composition layer damages, can also improve the anti-pulse ability of element simultaneously.
Though the present invention by preferred embodiment openly as above; but this is not to be used to limit the present invention; those of ordinary skill in the art is under the situation that does not break away from design of the present invention and scope; all can make various variations and improvement, so protection scope of the present invention is determined by the accompanying Claim book.
Claims (18)
1. a structure of transient over-voltage protector element is applicable to electronic component, it is characterized in that this structure of transient over-voltage protector element comprises:
One substrate;
One grounding electrode, this grounding electrode is arranged on the substrate;
One variable impedance composition layer, this variable impedance composition layer is arranged on the end of grounding electrode, and is electrically connected with grounding electrode;
One insulating barrier, this insulating barrier is arranged on the edge of variable impedance composition layer, and the middle body of variable impedance composition layer is come out; And
One signal electrode, an end of this signal electrode is arranged on the variable impedance composition layer of insulating barrier and exposure, and is electrically connected with the variable impedance composition layer, and the edge of signal electrode is positioned on the insulating barrier.
2. structure of transient over-voltage protector element according to claim 1 is characterized in that substrate comprises glass substrate, ceramic substrate.
3. structure of transient over-voltage protector element according to claim 1 is characterized in that, has a contact-making surface between variable impedance composition layer and the signal electrode, is used for transient overvoltage is imported grounding electrode.
4. structure of transient over-voltage protector element according to claim 1 is characterized in that, insulating barrier can be avoided the point discharge effect at signal electrode edge.
5. structure of transient over-voltage protector element according to claim 1 is characterized in that the material of insulating barrier comprises the advanced low-k materials of Si oxide, nitrogen oxide.
6. structure of transient over-voltage protector element according to claim 1 is characterized in that, insulating barrier is a frame structure.
7. a structure of transient over-voltage protector element is applicable to electronic component, it is characterized in that this structure of transient over-voltage protector element comprises:
One substrate;
One signal electrode and a grounding electrode, this signal electrode and this grounding electrode are arranged on the substrate;
One insulating barrier, this insulating barrier are arranged on the substrate between signal electrode and the grounding electrode; And
One variable impedance composition layer, this variable impedance composition layer are arranged on the insulating barrier between signal electrode and the grounding electrode, and signal electrode is electrically connected by the variable impedance composition layer with grounding electrode.
8. structure of transient over-voltage protector element according to claim 7 is characterized in that substrate comprises glass substrate, ceramic substrate.
9. structure of transient over-voltage protector element according to claim 7 is characterized in that, has a contact-making surface between variable impedance composition layer and the signal electrode, is used for transient overvoltage is imported grounding electrode.
10. structure of transient over-voltage protector element according to claim 7 is characterized in that, insulating barrier coats the edge of signal electrode, to avoid the point discharge effect at signal electrode edge.
11. structure of transient over-voltage protector element according to claim 7 is characterized in that, the material of insulating barrier comprises the advanced low-k materials of Si oxide, metal oxide.
12. structure of transient over-voltage protector element; be applicable to an electronic component; this structure of transient over-voltage protector element comprises a substrate, be arranged on a signal electrode on the substrate and a grounding electrode, is arranged on insulating barrier between signal electrode and the grounding electrode; an and variable impedance composition layer that is arranged between signal electrode and the grounding electrode; it is characterized in that utilizing insulating barrier that the edge of signal electrode is coated, transient overvoltage is imported grounding electrode through contact-making surface between variable impedance composition layer and the signal electrode.
13. structure of transient over-voltage protector element according to claim 12; it is characterized in that; the variable impedance composition layer is arranged on the end of grounding electrode; insulating barrier is arranged on the edge of variable impedance composition layer; and variable impedance composition layer middle body come out, an end of signal electrode is arranged on the variable impedance composition layer of insulating barrier and exposure.
14., it is characterized in that insulating barrier is a frame structure according to claim 12 or 13 described structure of transient over-voltage protector element.
15., it is characterized in that the structure of insulating barrier is consistent with the profile of variable impedance composition layer according to claim 12 or 13 described structure of transient over-voltage protector element.
16. structure of transient over-voltage protector element according to claim 12; it is characterized in that; insulating barrier is arranged in the substrate between signal electrode and the grounding electrode; so that signal electrode is coated; the variable impedance composition layer is arranged on the insulating barrier between signal electrode and the grounding electrode, and is electrically connected with signal electrode and grounding electrode.
17. structure of transient over-voltage protector element according to claim 12 is characterized in that, substrate comprises glass substrate, ceramic substrate.
18. structure of transient over-voltage protector element according to claim 12 is characterized in that, the material of insulating barrier comprises the advanced low-k materials of Si oxide, metal oxide.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 01118128 CN1275264C (en) | 2001-05-17 | 2001-05-17 | Structure of transient over-voltage protector element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 01118128 CN1275264C (en) | 2001-05-17 | 2001-05-17 | Structure of transient over-voltage protector element |
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| Publication Number | Publication Date |
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| CN1387203A CN1387203A (en) | 2002-12-25 |
| CN1275264C true CN1275264C (en) | 2006-09-13 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN 01118128 Expired - Fee Related CN1275264C (en) | 2001-05-17 | 2001-05-17 | Structure of transient over-voltage protector element |
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Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101203093B (en) * | 2006-12-15 | 2011-06-15 | 英业达股份有限公司 | Circuit board metallic layer amending method |
| CN101527451B (en) * | 2008-03-06 | 2011-02-02 | 佳邦科技股份有限公司 | Inductor and hollow air chamber integrated overvoltage protective device and application thereof |
| CN101673604B (en) * | 2008-09-09 | 2012-10-03 | Aem科技(苏州)股份有限公司 | Electrostatic protector and manufacture method thereof |
| CN101950645A (en) * | 2010-08-27 | 2011-01-19 | 广东风华高新科技股份有限公司 | Chip overvoltage protector and manufacturing method thereof |
| TW201238081A (en) * | 2011-03-08 | 2012-09-16 | Lextar Electronics Corp | Light emitting diode |
| CN103366953B (en) * | 2013-05-28 | 2016-01-13 | 捷迅视讯器材有限公司 | Electrion protective device and radio frequency transmission equipment |
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2001
- 2001-05-17 CN CN 01118128 patent/CN1275264C/en not_active Expired - Fee Related
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| Publication number | Publication date |
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| CN1387203A (en) | 2002-12-25 |
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Granted publication date: 20060913 Termination date: 20120517 |