TW517423B - Transient over-voltage protection device structure - Google Patents

Transient over-voltage protection device structure Download PDF

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Publication number
TW517423B
TW517423B TW90109218A TW90109218A TW517423B TW 517423 B TW517423 B TW 517423B TW 90109218 A TW90109218 A TW 90109218A TW 90109218 A TW90109218 A TW 90109218A TW 517423 B TW517423 B TW 517423B
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Taiwan
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conductive layer
layer
protection element
variable impedance
patent application
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TW90109218A
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Chinese (zh)
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Jiun-Yuan Li
Kang-Neng Shiu
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Inpaq Technology Co Ltd
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Priority to TW90109218A priority Critical patent/TW517423B/en
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Publication of TW517423B publication Critical patent/TW517423B/en

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Abstract

There is provided a transient over-voltage protection device structure. The structure utilizes an insulating layer to prevent the contact between the edge of the signal electrode layer and the variable impedance material layer, so as to eliminate the tip discharge effect existed at the edge of the signal electrode layer, and further increase the transient over-voltage capable of being sustained by the transient over-voltage protection device.

Description

517423 五、發明說明(l) 本發明是有關於一種暫態過電壓保護元件钟 二=有關於一種利用絕緣層隔絕訊號方 功能材料接觸的暫態過電塵保護元件結構。故、,表之太端與 設計態過電壓保護元件,是將可變阻抗材料 地導電二:Ϊ:,籍由可變阻抗材料將訊號導電層與接 的電麼範二變動ί阻=b :r k阻t材料的特性為可在適當 、 土视国艾動其阻抗值(impedance )。苴Φ 企 =電層(signal eiectrode )處在疋常的工 田Λ號 时’可變阻抗材料是高阻抗態,使得 乍:,圍内 内訊號導電層上的電壓與電流是可以正常工;電麼範圍 入接地.導電層(ground electrwe )。欲而,=不會被導 層上出現異常的突波(pu〗se )時,可變阻 *訊號導電 會轉變成低阻抗態,這個時候,突波的能量料的特性 層藉由暫等過電壓保護元件導入接地導電層而,號導電 ,Λ唬導電層的電壓會被限制在允許的範圍内,—因此 阻抗材料的特性以達到保護電路的目的。 错由可變 '知應用可變阻抗材料製作成暫態過電壓 有夕種形式,其中一種為單層結構(single ia、遠凡件已 =廣泛的使用於市面上’❿單層結構的元件通;r):已 n,其優點在於能夠承受極大能量 閃:j t種為積層結構(multl_laye",積層結構則閃二等 的7L件體積以及70件本身為表面黏著型鲅、、 ^照第丨圖,習知過電壓保護元件結構主γ γ。 土板1〇〇為主體’基板1〇〇上配置有一訊號導電層2=—-可517423 V. Description of the invention (l) The present invention relates to a transient overvoltage protection element clock. Second = relates to a structure of a transient overdust protection element that uses an insulating layer to isolate a signal-side functional material from contact. Therefore, the end of the table and the over-voltage protection element in the design state are the conductive impedance of the variable impedance material: Ϊ: The variable impedance material is used to change the resistance of the signal conductive layer and the electrical connection. The characteristic of the: rk resistance t material is that its impedance value can be adjusted at an appropriate level.苴 Φ When the enterprise layer (signal eiectrode) is at the usual Gongtian Λ number, the 'variable impedance material is in a high impedance state, so at first: the voltage and current on the signal conductive layer within the fence can work normally; The electrical range is grounded. The ground conductive layer (ground electrwe). If, = when there is no abnormal surge (pu〗 se) on the conductive layer, the variable resistance * signal conduction will change to a low impedance state. At this time, the characteristic layer of the energy material of the surge will temporarily wait. The overvoltage protection element is introduced into the grounded conductive layer, and the number is conductive, and the voltage of the conductive layer will be limited to the allowable range-so the characteristics of the impedance material to achieve the purpose of protecting the circuit. There are various forms of transient overvoltages that can be produced by using variable impedance materials. One of them is a single-layer structure (single ia, distant pieces = widely used in the market. Pass; r): n, the advantage is that it can withstand a large amount of energy flash: jt species is a laminated structure (multl_laye ", the laminated structure flashes second-class 7L pieces of volume and 70 pieces are surface adhesion type丨 The figure shows the main structure of the overvoltage protection element γ γ. The soil plate 100 is the main body, and a signal conductive layer 2 is arranged on the substrate 100.

517423 五、發明說明(2) 料層104以及一接地導電層2〇2b。其中,可變阻 抗材料層104一部分覆蓋於基板1〇〇上,另一 # 兮fl 莫帝麻ο η 〇 , “ 丨刀則復盖於 =上 ' 而㈣導電層2〇2b 一部*覆蓋於基板 yoo上,另—部分則覆蓋於可變阻抗材料層1〇4上,呈一 豐結構(Stacked structure )。 請苓照第2圖,美國專利第6, 0 1 3, 3 58號所揭露的過電 壓保護元件結構主要是以一玻璃或是陶兗基板為主體,此 玻璃或是陶瓷基板2 0 0之密度大於3· 5g/cm3,且玻璃或是 陶瓷基板2 0 0上配置有一對導電層2〇2,包括一訊號導電層 2 0 2a與一接地導電層202b,訊號導電層20 2 a與接地導電^ 2 0 2b之+間更配置有一可變阻抗材料層2〇4,可電阻抗材料曰 2 04覆蓋於基板1〇〇與部分之訊號導電層2〇2a與接地導電層 2 0 2 b上’用以將訊號導電層2 0 2 a上之過電壓導到接地導雷 層202b而排出。 請參照第3圖,在訊號導電層1 〇2a形成時,無論以薄 膜技術或厚膜技術製作,在訊號導電層丨02a的邊緣部分厚 度都會逐漸變薄’而在最邊緣處出現訊號導電層1 〇 2 a^切 線與水平線的夾角呈現銳角,此銳角在暫態過電壓出現時 極易發生尖端放電的情形且能量會集中在此處放電,故元 件的可承受之暫態過電壓將受到限制,進而影響元件整體 的表現。 因此,本發明的目的在提出一種暫態過電壓保護元件 結構利用絕緣體將訊號導電層的邊緣與可變阻抗材料層隔 離’改善暫態過電壓保護元件中訊號導電層尖端放電的現517423 V. Description of the invention (2) Material layer 104 and a ground conductive layer 202b. Among them, a part of the variable impedance material layer 104 is covered on the substrate 100, and the other # xifl 摩 帝 麻 ο η 〇, "丨 the knife is covered on the top" and the conductive layer 22b is partially covered * On the substrate yoo, the other part is covered on the variable impedance material layer 104, showing a stacked structure. Please refer to Figure 2, US Patent No. 6, 0 1 3, 3 58 The disclosed overvoltage protection element structure is mainly made of a glass or ceramic substrate. The density of the glass or ceramic substrate 2000 is greater than 3.5 g / cm3, and the glass or ceramic substrate 2000 is provided with a The conductive layer 202 includes a signal conductive layer 202a and a ground conductive layer 202b, and a signal impedance layer 202a and a ground conductive ^ 2 0 2b are further provided with a variable impedance material layer 204, The electrical resistive material covers the substrate 100 and a part of the signal conductive layer 202a and the ground conductive layer 2 0 2 b 'to conduct an overvoltage on the signal conductive layer 2 2 a to the ground. The lightning layer 202b is discharged. Please refer to FIG. 3, when the signal conductive layer 1 02a is formed, whether it is thin film technology or thick Technical production, the thickness of the edge of the conductive layer of the signal 02a will gradually become thinner, and the conductive layer of the signal appears at the outermost edge. The angle between the tangent line and the horizontal line is an acute angle. The situation of tip discharge is easy to occur and the energy will be concentrated here to discharge, so the transient overvoltage that the component can withstand will be limited, which will affect the overall performance of the component. Therefore, the object of the present invention is to propose a transient overvoltage protection. Element structure uses insulators to isolate the edge of the conductive layer of the signal from the layer of variable impedance material 'improves the phenomenon of discharge at the tip of the conductive layer of the signal in transient overvoltage protection components

517423 五、發明說明(3) 利 構 結 件 元 護 〇 保 高壓 提電 壓過 電態 過暫 態種 暫一 之出 受提 承在 可的 件目 元的 將明 而發 進本 象 迫面的 ,觸料 離接材 隔的成 層層造 料料而 材材域 抗抗區 阻阻小 變變的 可可緣 與與邊 緣層層 邊電電 的導導 層號於 電訊中 導於集 I#散度 訊分過 將量會 體能不 緣波而 絕突, 用使上 壞 損 Μ 的 目 述 上 之 明 發 本 達 為 元 護 保 壓 電 過 態 暫 C-BC- 種 緣存 邊緣 邊 電層 導電 號導 訊號 絕訊 隔除 以消 用而 層進 緣, 絕觸 一接 用的 使間 為層 構料 結材 其抗 ,阻 構變 結可 件與 膜會 薄都 以度 論厚 無分 ,部 時緣 成邊 形的 層層 ^¾^ 導導 =口=口 在在 而, 。作 應製 效術 電技 放膜 端厚 尖或 之術 在技 線尖 平生 水發 與易 線極 切時 之現 層出 電壓 導電 號過 訊態 現暫 出在 處角 緣銳 邊此 最, 在角 而銳 ,現 薄呈 變角 漸夾 逐的 故緣可 ,絕, 月 放利 處明 此發 在本 中, 集制 會限 量到 能受 且將 形壓 情電 的過 電態 放暫 端之 受電 承導 可號 的訊 件將 元體 構。 結高 之提 離壓 隔電 過 料態 材暫 抗之 阻受 變承 可可 與件 緣元 邊護 的保 層壓 過 態 暫 得 使 -辦 懂明 易說 顯細 明詳 更作 能’ 點式 優圖 和附 、所 徵合 特配 、並 的, 目例 述施 上實 之佳 明較 發一 本舉 讓特 為文: 下下 ,如 明 說 示 標 之 式 圖 層 板電 基導517423 V. Description of the invention (3) Protecting the structural elements, protecting the high voltage, increasing the voltage, over-electricity, over-transient, and temporarily out of the category, the person who will be promoted to the available items will be sent to the face of this situation, The layer of layered material that touches the material and the material is separated from the material. The cocoa edge and the electrical conductivity of the edge layer layer and the edge layer layer are small. Divide the physical energy into the wave without the edge, and use the Mingfa Benda on the description of the upper damage M to protect the piezoelectric transient state. The lead signal is separated by the consumption and the edge is layered. The contact is used to make the layer structure material resistant. The resistance to structural change and the film will be thin. The edges of the edges are ^ ¾ ^ Guide = 口 = 口 在 在 而 ,. As the effect of the electrical technology, the thick end of the film or the sharp voltage at the tip of the technical line, the current layer of the voltage when the line is cut and the line is cut, the signal state is temporarily out of the sharp edge of the corner. It is sharp at the corner, and it is now thin and the angle is gradually declining. The absolute reason is that the monthly release is clearly in the book. The assembly will be limited to a level that can withstand and release the over-electricity state of the electrical stress. The end-to-end information can be structured. The high resistance to isolation and electrical isolation of the material and the temporary resistance of the material can be changed. The cocoa and the edge protection of the edge element can be temporarily overlaid. Youtu and Attachment, the special combination of the levy, and the combination of the examples, Jiaming Shi, Shi Ming, issued a series of actions to make special features: The following, such as clearly stated that the type of the electric circuit board

第6頁 517423 五、發明說明(4) 102a、 202a· 102b、 202b· 300···· 302···· 304···· 306 · · · · 308 · · · · 〈較佳實施例〉 接地導電層 訊號導電層 基板 接地導電層 可變阻抗材料層 絕緣層 訊號導電層Page 6 517423 V. Description of the invention (4) 102a, 202a, 102b, 202b, 300, 300, 302, 304, 304, 306, 306, 308, ..., <preferred embodiment> Ground conductive layer Signal conductive layer Substrate Ground conductive layer Variable impedance material layer Insulating layer Signal conductive layer

暫態過電壓保護元件主要启的是保護電子設備不受突 j 波傷害,由於突$的瞬間能量很大,一般的電子設備無法 承X如此大的犯里衝擊,因此需要暫態過電壓保護元件的 保護。所以暫悲過電壓保護元件的主要特性是必須能夠承 受突波的衝擊’因此,暫態過電壓保護元件的設計必須針 對這種特性設計。 請參照第4圖至第7圖,其繪示為依照本發明一較佳實 施例暫態過電壓保護元件的製作流程示意圖。首先請參照 第4圖,提供一基板3 0 0,基板3 0D例如為玻璃基板或陶瓷 基板。於基板3 0 0上形成至少一接地導電層3 〇 2,此接地電 極3 0 2例如是以沈積或濺鍍方式形成,再以微影、蝕刻| φ 程將其圖案化(p a 11 e r n i n g )所形成。 接著請參照、第5圖,於接地導電層3 0 2的一端上形成一 可變阻抗材料層3 〇 4,此可變阻抗材料層3 0 4之材質例如以 導體粉末與半導體粉末均勻混合於含有結合劑的材料,這The transient overvoltage protection element is mainly used to protect electronic equipment from sudden j-wave damage. Due to the large instantaneous energy of a sudden $, the general electronic equipment cannot withstand such a large shock of X, so transient overvoltage protection is needed. Protection of components. Therefore, the main characteristic of a transient overvoltage protection element is that it must be able to withstand the shock of a surge ’. Therefore, the design of a transient overvoltage protection element must be designed for this characteristic. Please refer to FIGS. 4 to 7, which are schematic diagrams showing a manufacturing process of a transient overvoltage protection element according to a preferred embodiment of the present invention. First, referring to FIG. 4, a substrate 300 is provided, and the substrate 300D is, for example, a glass substrate or a ceramic substrate. At least one ground conductive layer 3 002 is formed on the substrate 300. The ground electrode 3 02 is formed, for example, by deposition or sputtering, and then patterned by lithography and etching (φ 11 erning). Formed. Next, referring to FIG. 5, a variable impedance material layer 3 0 4 is formed on one end of the ground conductive layer 3 02. The material of the variable impedance material layer 3 0 4 is, for example, uniformly mixed with a conductive powder and a semiconductor powder. Materials containing binders, which

第7頁 517423 五、發明說明(5) ' ~ 類材料已被發表多篇於美國專利中,其專利號碼分別為 3,685,026、 3,685,028、 4,977,357、 5,068,634、 5,、2 6 0-,84 8、5,2 94,374、5,3、9 3,5 9 6以及 5,8 0 7,5 0 9等。 接著請參照第6圖,形成一絕緣層3 06覆蓋於可變阻抗 材料層3 0 4之邊緣部分,使得絕緣層3〇6呈方框結構,但絕 ’緣層3 0 6之結構並不限定於方框結構,而會隨著可變阻抗 材料層3 0 4之輪廓而有所改變。此外,絕緣層3⑽將會將可 變阻抗材料層3 0 4的中央部分▲露出來,用以和後續形成 、之訊號導電層3 0 8 (請參照第7圖)電性連接。 .接著請同時蔘照第7 _與,第8圖,形成一訊號導電層 3 0 8於可變阻抗材料層3 0 4上/控制其邊緣位於絕緣層3 〇 6礓&gt; 上’且整條訊號導電層3 〇 8例如由與可變阻抗材料層3 0 4接 觸部分向外延伸至基板3 0 0。由第8圖可以清楚看出,藉由 微影、钱刻製程即可將訊號導電層3〇8之邊緣精確的控制 於絕緣層3 0 6上,使得訊號導電層3 0 8邊緣部分不會出現尖 端放電的現象,而經由訊號導電層3 〇 8與可變阻抗材料層 3 0 4的接觸面進行放電,故可以有效的消除訊號導電層3 〇 8 邊緣尖端放電的問題。 最後請參照第9圖,其|示為依照本發明另一較佳實 施例暫態過電壓保護元件的結構示意圖。暫態過電壓保護4 元件主要包括一基板3 0 0、一接地電極3 0 2、一可變阻抗材 料層3 0 4、一絕緣層3 0 6,以及一訊號導電層3 0 8。其中, 接地導電層3 0 2與訊號導電層3 0 8配置於基板3 0 0上,絕緣 層3 0 6配置於訊號導電層3 0 8與接地導電層3〇2之間之基板Page 7 517423 V. Description of the invention (5) '~ materials have been published in many U.S. patents, and their patent numbers are 3,685,026, 3,685,028, 4,977,357, 5,068,634, 5, 2, 6 0-, 84 8, 5 , 2 94,374, 5, 3, 9 3, 5 9 6 and 5, 8 0 7, 5 0 9 and so on. Next, referring to FIG. 6, an insulating layer 3 06 is formed to cover the edge portion of the variable impedance material layer 304, so that the insulating layer 3 06 has a box structure, but the structure of the insulating layer 3 06 is not It is limited to a box structure, but will change with the contour of the variable impedance material layer 304. In addition, the insulating layer 3⑽ will expose the central portion ▲ of the variable impedance material layer 304 for electrical connection with the subsequent formation of the signal conductive layer 3 0 (see FIG. 7). . Then please follow the same steps as Figure 7 and Figure 8 to form a signal conductive layer 3 0 8 on the variable impedance material layer 3 0 4 / control its edge to be on the insulating layer 3 0 6 &gt; The signal conductive layer 300 extends outward from the contact portion with the variable impedance material layer 304 to the substrate 300. It can be clearly seen from FIG. 8 that the lithographic and money engraving process can accurately control the edge of the signal conductive layer 308 on the insulating layer 3 06, so that the edge portion of the signal conductive layer 308 will not be affected. The phenomenon of tip discharge occurs, and the discharge is performed through the contact surface of the signal conductive layer 308 and the variable impedance material layer 304, so the problem of edge tip discharge of the signal conductive layer 308 can be effectively eliminated. Finally, please refer to FIG. 9, which is a schematic structural diagram of a transient overvoltage protection element according to another preferred embodiment of the present invention. The transient overvoltage protection 4 components mainly include a substrate 300, a ground electrode 3 02, a variable impedance material layer 3 0 4, an insulating layer 3 06, and a signal conductive layer 3 08. Among them, the ground conductive layer 302 and the signal conductive layer 308 are disposed on the substrate 300, and the insulating layer 3 06 is provided on the substrate between the signal conductive layer 308 and the ground conductive layer 302.

第8頁 W7423 ^明說明⑹ 3 0 〇上, 地導“而可變阻抗材料層3 0 4配置於訊號導電層3 〇 8與接 3 〇 4與電^層3 〇 2之間的絕緣層3 〇 6上方’且可變阻抗材料層 〃 ^I號導電層3 0 8及接地導電層3 0 2電性連接。 的邊^樣凊=照第8圖,絕緣層3 0 6覆蓋住訊號導電層3 0 8 地導㊉展並藉由可變阻抗材料層304與訊號導電層3〇8及接 效、的ί i 電胃性連接,使得暫態過電壓保護元件可以有 保,護元件==V電層邊緣尖端放電的問題,且可避免造成 =件材料的永久性損壞。 的電ΐ :圖件與/敫”中暫態過電塵保護元件之結構可與各類 波衝擊,使J:二二i於保護元件本身能夠承受更高的突 電子元件的;現?元件的保護更為有⑨,不但增加了 使用壽命。i t ormance)更可進—步增進元件的 由絕緣層的形成而;:;變阻抗材料亦藉 特性;:所Γ進-二護元件的 有下列'優,本發明之暫態過電壓保護元件結構至少具 結構中:W:,恶二電壓保護元件在遇到突波發生時, 訊號導電層Ιίί:;緣到絕緣層,所以不會經由 材料層的接觸面進行放電,故可以有^的=S與可變阻抗 邊緣尖端放電的問題。 &gt; 的消除訊號導電層 2·本發明之暫態過電壓保護元 . 過度集中於訊號導電層邊緣之 ::::因突波能量 飞而k成材料的永久損壞Page 7 W7423 ^ Description ⑹ 3 0 〇, the ground guide "and the variable impedance material layer 3 0 4 is disposed between the signal conductive layer 3 〇 08 and the insulation layer between 3 〇 4 and the electrical layer 3 〇 2 Above 3〇6 'and the variable impedance material layer ^ ^ I conductive layer 3 0 8 and the ground conductive layer 3 0 2 are electrically connected. The edge ^ sample 凊 = according to Figure 8, the insulating layer 3 0 6 covers the signal The conductive layer 308 is grounded and connected to the signal conductive layer 308 and the conductive layer i through the variable impedance material layer 304, so that the transient overvoltage protection element can be protected and protected. == The problem of discharge at the edge of the V electric layer, which can avoid permanent damage to the material. The electric ΐ: drawing and / 敫 ”The structure of the transient over-electric dust protection element can be shocked with various types of waves, Make J: 22i i protect the component itself from being able to withstand higher sudden electronic components; now? The protection of the components is even better, which not only increases the service life. it ormance) can further improve the formation of the element by the insulation layer;:; variable impedance materials also take advantage of the characteristics ;: so Γ-second protection element has the following 'excellent, the transient overvoltage protection element of the present invention The structure has at least the structure: W :, when the second voltage protection element encounters a surge, the signal conductive layer Ιί :; edge to the insulation layer, so it will not discharge through the contact surface of the material layer, so it can have ^ = S and discharge problems with variable impedance edge tips. &gt; Elimination of the conductive layer of the signal 2. The transient overvoltage protection element of the present invention. Excessive concentration on the edge of the conductive layer of the signal :::: Permanent damage to the material due to surge energy flying

第9頁 517423 五、發明說明(7) 料損 #層 抗料 阻材 變抗 可阻 與變 層可 電對 導波 號突 訊低 由降 藉但 以不 可, 僅過 制通 限勻 被均 量面 -·、 能觸 波接 突的 ’ 層 用精 非之 並明 其發 然本 上脫 。如不 量露在 耐揭, 波例者 突施藝 的實技 件佳此 元較習 昇一熟 提以何 時已任 同明, ^發明 ,本發 率然本 機雖定 的 限 壞 以 保 之 明 發 本。 此準 因為 ,者 飾定 潤界 與所 動圍 更範 之利 種專 各請 作申 可之 當附 ,後 内視 圍當 範圍 和範 神護Page 9 517423 V. Description of the invention (7) Material loss #Layer resistance material resistance can be resisted and the variable layer can be electrically connected to the guided wave. The signal burst can be lowered but not impossible. The measuring surface-·, can touch the wave of the 'layer with the essence of the non-existent and clearly shows that it is naturally off. If you do n’t reveal it, the actual technical pieces of the waver are suddenly better than Xi Shengyi. When the time is up, ^ Invention, but the machine is limited, but the limit is bad. . This criterion is due to the fact that the person who has set up the Runjie and the more general interests should be attached to the application, and the internal scope and scope of the fan protection

第10頁 517423 圖式簡單說明 第1圖與第2圖分別繪示為習知暫態過電壓保護元件之結構 剖面不意圖, 第3圖繪示為第1圖中訊號導電層邊緣與可變電阻材料接觸 之局部放大圖; 第4圖至第7圖繪示為依照本發明一較佳實施例暫態過電壓 保護元件的製作流程示意圖; 第8圖繪示為第7圖中訊號導電層邊緣與可變電阻材料接觸 之局部放大圖;以及 第9圖繪示為依照本發明另一較佳實施例暫態過電壓保護 元件的結構不意圖。Page 517423 Brief description of the diagrams Figures 1 and 2 show the structural cross section of the conventional transient overvoltage protection element, respectively, and Figure 3 shows the edges of the signal conductive layer in Figure 1 and the variable A partial enlarged view of the contact of the resistive material; FIGS. 4 to 7 are schematic diagrams of a manufacturing process of a transient overvoltage protection element according to a preferred embodiment of the present invention; and FIG. 8 is a conductive layer of the signal in FIG. 7 A partially enlarged view of the edge in contact with the variable resistance material; and FIG. 9 shows the structure of the transient overvoltage protection element according to another preferred embodiment of the present invention is not intended.

Claims (1)

517423 六、申請專利範圍 1. 一種暫態過電壓保護元件結構,適用於一電子元件 ,該暫態過電壓保護元件結構包括: 一基板; 一接地導電層,該接地導電層係配置於該基板上; 一可變阻抗材料層,該可變阻抗材料層配置於該接地 導電層的一端上,並與該接地導電層電性連接; 一絕緣層,該絕緣層配置於該可變阻抗材料層的邊緣 ,並將該可變阻抗材料層中央部分暴露;以及 一訊號導電層,該訊號導電層的一端配置於該絕緣層 與該暴露之可變阻抗材料層上,並與該可變阻抗材料層電 性連接,且該訊號導電層之邊緣位於該絕緣層上。 2. 如申請專利範圍第1項所述之暫態過電壓保護元件 結構,其中該基板包括玻璃基板、陶瓷基板。 3. 如申請專利範圍第1項所述之暫態過電壓保護元件 結構,其中該可變阻抗材料層與該訊號導電層之間具有一 接觸面,用以將暫態過電壓導到該接地導電層。 4. 如申請專利範圍第1項所述之暫態過電壓保護元件 結構,其中該絕緣層可避免該訊號導電層邊緣的尖端放電 效應。 5. 如申請專利範圍第1項所述之暫態過電壓保護元件 結構,其中該絕緣層之材質包括矽氧化物、氮氧化物等低 介電常數材質。 6 .如申請專利範圍第1項所述之暫態過電壓保護元件 結構,其中該絕緣層係為一方框結構。517423 6. Scope of patent application 1. A transient overvoltage protection element structure suitable for an electronic component, the transient overvoltage protection element structure includes: a substrate; a grounded conductive layer, the grounded conductive layer is disposed on the substrate A variable impedance material layer disposed on one end of the grounded conductive layer and electrically connected to the grounded conductive layer; an insulating layer disposed on the variable impedance material layer And a central portion of the variable impedance material layer is exposed; and a signal conductive layer, one end of the signal conductive layer is disposed on the insulation layer and the exposed variable impedance material layer, and is in contact with the variable impedance material. Layers are electrically connected, and the edges of the signal conductive layer are located on the insulating layer. 2. The transient overvoltage protection element structure described in item 1 of the scope of patent application, wherein the substrate includes a glass substrate and a ceramic substrate. 3. The transient overvoltage protection element structure according to item 1 of the scope of patent application, wherein a contact surface is provided between the variable impedance material layer and the signal conductive layer to conduct a transient overvoltage to the ground Conductive layer. 4. The transient overvoltage protection element structure described in item 1 of the scope of patent application, wherein the insulating layer can avoid the tip discharge effect of the edge of the conductive layer of the signal. 5. The transient overvoltage protection element structure described in item 1 of the scope of the patent application, wherein the material of the insulating layer includes low-dielectric constant materials such as silicon oxide and nitrogen oxide. 6. The transient over-voltage protection element structure described in item 1 of the scope of patent application, wherein the insulation layer is a box structure. 第12頁 517423 六、申請專利範圍 7. —種暫態過電壓保護元件結構,適用於一電子元件 5該暫態過電壓保護元件結構包括: 一基板; 一訊號導電層與一接地導電層,該第一導電層與該接 地導電層係配置於該基板上; 一絕緣層,該絕緣層配置於該訊號導電層與該接地導 電層之間之該基板上;以及 一可變阻抗材料層,該可變阻抗材料層配置於該訊號 導電層與該接地導電層之間之該絕緣層上,並藉由可變阻 抗材料層與該訊號導電層及該接地導電層電性連接。 φ 8. 如申請專利範圍第7項所述之暫態過電壓保護元件 結構,其中該基板包括玻璃基板、陶瓷基板。 9 .如申請專利範圍第7項所述之暫態過電壓保護元件 結構,其中該可變阻抗材料層與該訊號導電層之間具有一 接觸面,用以將暫態過電壓導到該接地導電層。 1 0 .如申’請專利範圍第7項所述之暫態過電壓保護元件 結構,其中該絕緣層係將該訊號導電層的邊緣包覆,以避 免該訊號導電層邊緣的尖端放電效應。 1 1.如申請專利範圍第7項所述之暫態過電壓保護元件 結構,其中該絕緣層之材質包括矽氧化物、金屬氧化物等 # 低介電常數材質。 1 2. —種暫態過電壓保護元件結構,適用於一電子元 件,該暫態過電壓保護元件結構包括一基板、配置於基板 上之一訊號導電層與一接地導電層、一配置於該訊號導電Page 12 517423 6. Scope of patent application 7. —A kind of transient overvoltage protection element structure suitable for an electronic component 5 The transient overvoltage protection element structure includes: a substrate; a signal conductive layer and a ground conductive layer, The first conductive layer and the ground conductive layer are disposed on the substrate; an insulating layer disposed on the substrate between the signal conductive layer and the ground conductive layer; and a variable impedance material layer, The variable impedance material layer is disposed on the insulating layer between the signal conductive layer and the ground conductive layer, and is electrically connected to the signal conductive layer and the ground conductive layer through the variable impedance material layer. φ 8. The transient overvoltage protection element structure described in item 7 of the scope of patent application, wherein the substrate includes a glass substrate and a ceramic substrate. 9. The transient overvoltage protection element structure according to item 7 of the scope of the patent application, wherein the variable impedance material layer and the signal conductive layer have a contact surface for conducting a transient overvoltage to the ground Conductive layer. 10. The transient overvoltage protection element structure described in claim 7 of the patent application, wherein the insulating layer covers the edge of the signal conductive layer to avoid the tip discharge effect of the edge of the signal conductive layer. 1 1. The transient overvoltage protection element structure described in item 7 of the scope of patent application, wherein the material of the insulating layer includes silicon oxide, metal oxide, etc. # Low dielectric constant materials. 1 2. —A transient overvoltage protection element structure suitable for an electronic component. The transient overvoltage protection element structure includes a substrate, a signal conductive layer and a ground conductive layer disposed on the substrate, and a Signal conductive 第13頁 517423 六、申請專利範圍 層與該接地導電層之間的絕緣層,以及一配置於該訊號導 電層與該接地導電層之間的可變阻抗材料層,其特徵在於 利用該絕緣層係將該訊號導電層的邊緣包覆,而藉由可變 阻抗材料層與該訊號導電層之間接觸面將暫態過電壓導到 該接地導電層。 1 3 .如申請專利範圍第1 2項所述之暫態過電壓保護元 件結構,其中該可變組抗材料層配置於該接地導電層的一 端上,該絕緣層配置於該可變阻抗材料層的邊緣,並將該 可變阻抗材料層中央部分暴露,而該訊號導電層的一端配 置於該絕緣層與該暴露之可變阻抗材料層上。 1 4 .如申請專利範圍第1 2項或第1 3項所述之暫態過電 壓保護元件結構,其中該絕緣層係為一方框結構。 1 5 .如申請專利範圍第1 2項或第1 3項所述之暫態過電 壓保護元件結構,其中該絕緣層之結構係與該可變阻抗材 料層之輪廓一致。 1 6 .如申請專利範圍第1 2項所述之暫態過電壓保護元 件結構^其中該絕緣層係配置於該訊號導電層與該接地導 電層之間的該基底上,以將該訊號導電層包覆,而該可變 組抗材料層係配置於該訊號導電層與該接地導電層之間的 該絕緣層上,並與該訊號導電層與該接地導電層電性連 接。 1 7 .如申請專利範圍第1 2項所述之暫態過電壓保護元 件結構,其中該基板包括玻璃基板、陶瓷基板。 1 8 .如申請專利範圍第1 2項所述之暫態過電壓保護元Page 13 517423 VI. The insulating layer between the patent application layer and the ground conductive layer, and a variable impedance material layer disposed between the signal conductive layer and the ground conductive layer, which is characterized by using the insulating layer The edge of the signal conductive layer is covered, and a transient overvoltage is conducted to the ground conductive layer through a contact surface between the variable impedance material layer and the signal conductive layer. 13. The transient overvoltage protection element structure according to item 12 of the scope of the patent application, wherein the variable impedance material layer is disposed on one end of the ground conductive layer, and the insulating layer is disposed on the variable impedance material. And the central portion of the variable impedance material layer is exposed, and one end of the signal conductive layer is disposed on the insulation layer and the exposed variable impedance material layer. 14. The structure of the transient overvoltage protection element according to item 12 or item 13 of the scope of patent application, wherein the insulating layer has a box structure. 15. The structure of the transient over-voltage protection element according to item 12 or item 13 of the scope of the patent application, wherein the structure of the insulating layer is consistent with the contour of the variable impedance material layer. 16. The transient over-voltage protection element structure described in item 12 of the scope of patent application ^ wherein the insulating layer is disposed on the substrate between the signal conductive layer and the ground conductive layer to conduct the signal conductively And the variable impedance material layer is disposed on the insulating layer between the signal conductive layer and the ground conductive layer, and is electrically connected to the signal conductive layer and the ground conductive layer. 17. The structure of a transient overvoltage protection device as described in item 12 of the scope of patent application, wherein the substrate includes a glass substrate and a ceramic substrate. 18. Transient overvoltage protection element as described in item 12 of the scope of patent application 第14頁 517423 六、申請專利範圍 件結構,其中該絕緣層之材質包括矽氧化物、金屬氧化物 等低介電常數材質。 ί 第15頁Page 14 517423 VI. Scope of patent application Component structure, in which the material of the insulation layer includes silicon oxide, metal oxide and other low dielectric constant materials. ί Page 15
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