TW201631794A - 發光二極體晶片 - Google Patents

發光二極體晶片 Download PDF

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TW201631794A
TW201631794A TW105104548A TW105104548A TW201631794A TW 201631794 A TW201631794 A TW 201631794A TW 105104548 A TW105104548 A TW 105104548A TW 105104548 A TW105104548 A TW 105104548A TW 201631794 A TW201631794 A TW 201631794A
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layer
type doped
semiconductor layer
doped semiconductor
emitting diode
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TW105104548A
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賴騰憲
郭祐禎
康凱舜
蘭彥廷
黃靖恩
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新世紀光電股份有限公司
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Abstract

一種發光二極體晶片，包括半導體元件層、第一電極、電流阻擋層、電流分散層以及第二電極。半導體元件層包括第一型摻雜半導體層、發光層以及第二型摻雜半導體層。電流阻擋層包括主體以及多個分別從主體朝向第一電極延伸的延伸部。電流分散層覆蓋電流阻擋層。第二電極配置於電流分散層上，且包括焊墊以及多個從焊墊延伸的指部。這些指部位於這些延伸部上方，其中這些延伸部的寬度大於對應指部的寬度，延伸部沿著一排列方向排列，且在排列方向上，較靠近發光二極體晶片邊緣的延伸部具有較小的寬度。

Description

發光二極體晶片
本發明是有關於一種發光元件，且特別是有關於一種發光二極體(Light-Emitting Diode，LED)晶片。
隨著半導體科技的進步，現今的發光二極體已具備了高亮度與高演色性等特性，加上發光二極體具有省電、體積小、低電壓驅動以及不含汞等優點，發光二極體已廣泛地應用在顯示器與照明等領域。一般而言，發光二極體晶片的發光效率與發光二極體晶片的內部量子效率（即光取出率）相關。當發光層所發出的光線有更多比率可以穿透出發光二極體晶片時，代表著發光二極體晶片的內部量子效率較佳。發光二極體晶片的電極通常是由金屬材質所製造，由於金屬材質的不透光性，發光二極體晶片上被電極覆蓋的區域所發出的光線無法有效的被利用。如此一來，會造成電能的浪費。因此，習知已發展出一種在電極與半導體元件層之間製作電流阻擋層的技術，然而，透過電流阻擋層來提升發光二極體晶片的發光效率仍然存在許多改善的空間。因此，如何進一步提升發光二極體晶片的發光效率，實為目前研發人員研發的重點之一。
本發明提供一種發光二極體晶片，其具有電流阻擋層以有效控制電流聚集的位置，進而有效提升發光效率。
本發明提供一種發光二極體晶片，其包括一半導體元件層、一第一電極、一電流阻擋層、一電流分散層以及一第二電極。半導體元件層包括一第一型摻雜半導體層、一發光層以及一第二型摻雜半導體層，其中發光層位於第一型摻雜半導體層與第二型摻雜半導體層之間。第一電極與第一型摻雜半導體層電性連接。電流阻擋層配置於第二型摻雜半導體層上，電流阻擋層包括一主體以及多個延伸部。電流分散層配置於第二型摻雜半導體層上以覆蓋電流阻擋層。第二電極配置於該電流分散層上。第二電極包括一焊墊以及多個從焊墊延伸的指部，且多個指部位於延伸部上方，其中多個延伸部的寬度大於對應指部的寬度，且較靠近發光二極體晶片邊緣的延伸部具有較小的寬度。
在本發明的一實施例中，上述發光層配置於第一型摻雜半導體層上以暴露出部份第一型摻雜半導體層，且第一電極配置於發光層所暴露出的部份第一型摻雜半導體層上。
在本發明的一實施例中，上述的多個指部具有相同的寬度。
在本發明的一實施例中，上述的電流分散層的材質包括透明導電材料。
在本發明的一實施例中，上述的多個指部的數量與多個延伸部數量相同，且多個指部的數量大於2。
在本發明的一實施例中，上述的焊墊位於主體上方，且第二電極經由電流分散層與第二型摻雜半導體層電性連接。
在本發明的一實施例中，上述的焊墊貫穿電流分散層與主體，且焊墊與第二型摻雜半導體層接觸。
在本發明的一實施例中，上述的電流分散層覆蓋被焊墊貫穿的主體的側壁。
在本發明的一實施例中，上述的電流分散層未覆蓋被焊墊貫穿的主體的一側壁。
在本發明的一實施例中，上述貫穿電流分散層與主體的焊墊會與主體的一側壁接觸。
基於上述，本發明實施例的發光二極體晶片透過電流阻擋層以及第二電極的設計，可控制電流聚集的位置，因此本發明的發光二極體晶片具有良好的發光效率。
為讓本發明的上述特徵和優點能更明顯易懂，下文特舉實施例，並配合所附圖式作詳細說明如下。
圖1A是依據本發明實施例的發光二極體晶片的剖面圖。圖1B是依據本發明實施例的發光二極體晶片的上視圖。圖1C是依據本發明另一實施例的不同發光二極體晶片的上視圖。
請參照圖1A以及圖1B，本實施例的發光二極體晶片100a包括一半導體元件層110、一第一電極120、一電流阻擋層130、一電流分散層140以及一第二電極150。半導體元件層110包括一第一型摻雜半導體層112、一發光層114以及一第二型摻雜半導體層116，其中發光層114位於第一型摻雜半導體層112與第二型摻雜半導體層116之間。第一電極120與第一型摻雜半導體層112電性連接。電流阻擋層130配置於第二型摻雜半導體層116上，且電流阻擋層130包括一主體132以及多個分別從主體132朝向第一電極120延伸的延伸部134。電流分散層140配置於第二型摻雜半導體層116上以覆蓋電流阻擋層130。第二電極150經由電流分散層140與第二型摻雜半導體層116電性連接，其中第二電極150包括一焊墊152以及多個從焊墊152延伸的指部154，焊墊152位於主體132上方，而這些指部154位於這些延伸部134上方，其中這些延伸部134的寬度大於對應指部154的寬度，這些延伸部134沿著一排列方向D排列，且在此排列方向D上，較靠近發光二極體晶片100a邊緣E的延伸部134具有較小的寬度。其中，這些延伸部134的延伸方向與排列方向D垂直。具體而言，本實施例中的指部154以及延伸部134的數量相等且皆為三個。然而，本實施例並不限定指部154以及延伸部134的數量。此外，在本實施例中，指部154具有相同的寬度，於其他實施例中，指部154可具有不同的寬度。
一般來說，施加於第二電極150的驅動電流主要的方向會由第二電極150至第一電極120。然，在本實施例中，較靠近發光二極體晶片100a邊緣E的延伸部134相對於在發光二極體晶片100a中心部分的延伸部134具有較小的寬度。換言之，較靠近發光二極體晶片100a中心部分的延伸部134較能有效的阻擋來自於第二電極150的電流，而較靠近發光二極體晶片100a邊緣E的延伸部134的阻擋效果較不明顯。因此，本實施例可以透過指部154和對應的延伸部134在發光二極體晶片100a不同區域的寬度設計來控制發光二極體晶片100a中電流聚集區域的位置，進而提升發光二極體晶片100a的發光效率。
在本實施例中，發光層114配置於第一型摻雜半導體層112上以暴露出部份的第一型摻雜半導體層112，且第一電極120配置於發光層114所暴露出的部份第一型摻雜半導體層112上。換言之，本實施例的發光二極體晶片100a為水平式（horizontal type）發光二極體晶片。舉例而言，半導體元件層110中的第一型摻雜半導體層112例如為N型摻雜半導體層，而第二型摻雜半導體層116例如為P型摻雜半導體層，且發光層114例如由多個交替堆疊的井層（well layers）以及阻障層（barrier layer）所構成的多重量子井層（Multiple Quantum Well，MQW）。此外，本實施例的半導體元件層110例如是透過磊晶製程製作於一基板SUB上，而此基板SUB可為藍寶石基板、矽基板、碳化矽基板等。
值得注意的是，前述的半導體元件層110可進一步包括一緩衝層160，此緩衝層160通常會在第一型摻雜半導體層112製作之前，先形成於基板SUB上。換言之，緩衝層160可選擇性地形成於基板SUB與半導體元件層110之間，以提供適當應力釋放並且改善後續形成的薄膜的磊晶品質。
在本實施例中，第一電極120例如是與第一型摻雜半導體層112具有良好歐姆接觸的金屬材質，電流阻擋層130的材質例如是介電層，電流分散層140的材質例如是透明導電材料，而第二電極150例如是與電流分散層140具有良好歐姆接觸的金屬材質。舉例而言，第一電極120的材質包括金（Au）、鈦（Ti）或鋁（Al）等導電材料，電流阻擋層130的材質包括矽氧化物（SiOx）或氮化矽（SiNx）等介電材料，電流分散層140的材質包括銦錫氧化物（ITO）、銦鋅氧化物（IZO）等透明導電材料；而第二電極150的材質包括金（Au）、鈦（Ti）或鋁（Al）等導電材料。
下述實施例沿用前述實施例的元件標號與部分內容，其中採用相同的標號來表示相同或近似的元件，並且省略了相同技術內容的說明。關於省略部分的說明可參考前述實施例，下述實施例不再重複贅述。
圖1C是依據本發明另一實施例的不同發光二極體晶片的上視圖。請參照圖1C，具體而言，本實施例之指部154以及延伸部134的數量相等且皆為五個。然而，本實施例並不限定指部154以及延伸部134的數量必須為奇數，指部154以及延伸部134的數量亦可以偶數。
在前述的實施例中，指部154以及對應的延伸部134的數量可用以控制發光二極體晶片100a中電流聚集區域的密度，以其能進一步的提升發光二極體晶片100a的發光效率。
圖2是依據本發明另一實施例的發光二極體晶片的剖面圖。請參照圖2，在本實施例的發光二極體晶片100b與前述實施例的發光二極體晶片100a主要的差異在於：在本實施例中，焊墊152貫穿電流分散層140與主體132，且焊墊152與第二型摻雜半導體層116接觸，其中電流分散層140覆蓋被焊墊152貫穿的主體132的一側壁S。
圖3是依據本發明另一實施例的不同發光二極體晶片的剖面圖。請參照圖3，在本實施例的發光二極體晶片100c與前述實施例的發光二極體晶片100b主要的差異在於：在本實施例中，電流分散層140未覆蓋被焊墊152貫穿的主體132的一側壁S。換言之，貫穿電流分散層140與主體132的焊墊152會直接與主體132的側壁S接觸或連接。
相較於發光二極體晶片100a，在前述的實施例所提到的發光二極體晶片（100b或100c）的配置方式，可以更進一步提昇第二電極150與發光二極體晶片（100b或100c）的黏著性，可以避免第二電極150與發光二極體晶片（100b或100c）剝離。
應注意的是，雖然圖1B與圖1C所繪示的配置方式以發光二極體晶片100a為例，但是圖2與圖3所繪示的發光二極體晶片（100a或100c）也可以具有如同圖1B與圖1C所繪示的配置方式。
綜上所述，本發明的發光二極體晶片中透過電流阻擋層以及第二電極的設計，可控制電流聚集的位置，因此本發明的發光二極體晶片具有良好的發光效率。此外，焊墊貫穿電流分散層與主體，可以提升第二電極與發光二極體晶片的黏著性，避免第二電極與發光二極體晶片剝離。
雖然本發明已以實施例揭露如上，然其並非用以限定本發明，任何所屬技術領域中具有通常知識者，在不脫離本發明的精神和範圍內，當可作些許的更動與潤飾，故本發明的保護範圍當視後附的申請專利範圍所界定者為準。
100a、100b、100c‧‧‧發光二極體晶片
110‧‧‧半導體元件層
112‧‧‧第一型摻雜半導體層
114‧‧‧發光層
116‧‧‧第二型摻雜半導體層
120‧‧‧第一電極
130‧‧‧電流阻擋層
132‧‧‧主體
134‧‧‧延伸部
140‧‧‧電流分散層
150‧‧‧第二電極
152‧‧‧焊墊
154‧‧‧指部
160‧‧‧緩衝層
D‧‧‧排列方向
E‧‧‧邊緣
S‧‧‧側壁
SUB‧‧‧基板
圖1A是依據本發明實施例的發光二極體晶片的剖面圖。 圖1B是依據本發明實施例的發光二極體晶片的上視圖。 圖1C是依據本發明另一實施例的發光二極體晶片的上視圖。 圖2是依據本發明另一實施例的發光二極體晶片的剖面圖。 圖3是依據本發明另一實施例的發光二極體晶片的剖面圖。
100a‧‧‧發光二極體晶片
110‧‧‧半導體元件層
120‧‧‧第一電極
130‧‧‧電流阻擋層
132‧‧‧主體
134‧‧‧延伸部
140‧‧‧電流分散層
150‧‧‧第二電極
152‧‧‧焊墊
154‧‧‧指部
D‧‧‧排列方向
E‧‧‧邊緣

Claims (10)

  1. 一種發光二極體晶片，包括： 一半導體元件層，包括一第一型摻雜半導體層、一發光層以及一第二型摻雜半導體層，其中該發光層位於該第一型摻雜半導體層與該第二型摻雜半導體層之間； 一第一電極，與該第一型摻雜半導體層電性連接； 一電流阻擋層，配置於該第二型摻雜半導體層上，該電流阻擋層包括一主體以及多個延伸部； 一電流分散層，配置於該第二型摻雜半導體層上以覆蓋該電流阻擋層；以及 一第二電極，配置於該電流分散層上，該第二電極包括一焊墊以及多個從該焊墊延伸的指部，且該些指部位於該些延伸部上方，其中該些延伸部的寬度大於對應指部的寬度，且較靠近發光二極體晶片邊緣的延伸部具有較小的寬度。
  2. 如申請專利範圍第1項所述的發光二極體晶片，其中該發光層配置於該第一型摻雜半導體層上以暴露出部份該第一型摻雜半導體層，且該第一電極配置於該發光層所暴露出的部份該第一型摻雜半導體層上。
  3. 如申請專利範圍第1項所述的發光二極體晶片，其中該些指部具有相同的寬度。
  4. 如申請專利範圍第1項所述的發光二極體晶片，其中該電流分散層的材質包括透明導電材料。
  5. 如申請專利範圍第1項所述的發光二極體晶片，其中該些指部的數量與該些延伸部數量相同，且該些指部的數量大於2。
  6. 如申請專利範圍第1項所述的發光二極體晶片，其中該焊墊位於該主體上方，且該第二電極經由該電流分散層與該第二型摻雜半導體層電性連接。
  7. 如申請專利範圍第1項所述的發光二極體晶片，其中該焊墊貫穿該電流分散層與該主體，且該焊墊與該第二型摻雜半導體層接觸。
  8. 如申請專利範圍第7項所述的發光二極體晶片，其中該電流分散層覆蓋被該焊墊貫穿的該主體的一側壁。
  9. 如申請專利範圍第7項所述的發光二極體晶片，其中該電流分散層未覆蓋被該焊墊貫穿的該主體的一側壁。
  10. 如申請專利範圍第7項所述的發光二極體晶片，其中貫穿該電流分散層與該主體的該焊墊與該主體的一側壁接觸。
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