CN115917767A - 半导体结构及其制作方法 - Google Patents
半导体结构及其制作方法 Download PDFInfo
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- CN115917767A CN115917767A CN202080102500.XA CN202080102500A CN115917767A CN 115917767 A CN115917767 A CN 115917767A CN 202080102500 A CN202080102500 A CN 202080102500A CN 115917767 A CN115917767 A CN 115917767A
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- 238000004519 manufacturing process Methods 0.000 title abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 36
- 238000001039 wet etching Methods 0.000 claims abstract description 14
- 238000000034 method Methods 0.000 claims description 39
- 239000000463 material Substances 0.000 claims description 37
- 238000009792 diffusion process Methods 0.000 claims description 29
- 150000004767 nitrides Chemical class 0.000 claims description 12
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 10
- 238000005530 etching Methods 0.000 claims description 9
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 6
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 3
- 229910017604 nitric acid Inorganic materials 0.000 claims description 3
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- 239000010410 layer Substances 0.000 description 365
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- 238000010586 diagram Methods 0.000 description 8
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- 230000015572 biosynthetic process Effects 0.000 description 6
- 229910002601 GaN Inorganic materials 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 239000013078 crystal Substances 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910003460 diamond Inorganic materials 0.000 description 3
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- 239000010980 sapphire Substances 0.000 description 3
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- 239000007788 liquid Substances 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
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- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 108010001267 Protein Subunits Proteins 0.000 description 1
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- 230000015556 catabolic process Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
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- 238000002425 crystallisation Methods 0.000 description 1
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- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000002096 quantum dot Substances 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
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- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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Abstract
本申请提供了一种半导体结构及其制作方法，半导体结构的制作方法中：对于自下而上依次分布的衬底、第一导电类型的半导体层、发光层与第二导电类型的半导体层，去除第一预定区域的第二导电类型的半导体层、发光层与第一导电类型的半导体层形成凹槽，保留第二、第三预定区域的第二导电类型的半导体层、发光层与第一导电类型的半导体层，第二预定区域保留的各层形成阵列式排布的发光单元，第三预定区域保留的各层形成连接相邻发光单元的连接柱；在行与列方向上，第三预定区域的宽度都小于第二预定区域的宽度。如此，对于镂空的第一导电类型的半导体层、发光层与第二导电类型的半导体层，可自凹槽湿法腐蚀去除衬底，大批量形成多个小尺寸LED结构。
Description
PCT国内申请，说明书已公开。
Claims (20)
- PCT国内申请，权利要求书已公开。
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/CN2020/102318 WO2022011635A1 (zh) | 2020-07-16 | 2020-07-16 | 半导体结构及其制作方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN115917767A true CN115917767A (zh) | 2023-04-04 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202080102500.XA Pending CN115917767A (zh) | 2020-07-16 | 2020-07-16 | 半导体结构及其制作方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US20230154902A1 (zh) |
| CN (1) | CN115917767A (zh) |
| TW (1) | TWI811729B (zh) |
| WO (1) | WO2022011635A1 (zh) |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102130238B (zh) * | 2010-12-29 | 2014-02-19 | 映瑞光电科技(上海)有限公司 | 蓝宝石衬底led芯片的切割方法 |
| JP2014090011A (ja) * | 2012-10-29 | 2014-05-15 | Mitsuboshi Diamond Industrial Co Ltd | Ｌｅｄパターン付き基板の加工方法 |
| TWI583019B (zh) * | 2015-02-17 | 2017-05-11 | 新世紀光電股份有限公司 | Light emitting diode and manufacturing method thereof |
| KR102019262B1 (ko) * | 2016-11-29 | 2019-11-04 | 고려대학교 산학협력단 | 발광 소자 디스플레이 장치 및 이의 제조 방법 |
| TWI721340B (zh) * | 2018-12-04 | 2021-03-11 | 榮創能源科技股份有限公司 | 發光二極體及其製作方法 |
| CN109671822A (zh) * | 2019-01-10 | 2019-04-23 | 佛山市国星半导体技术有限公司 | 一种防激光切割损伤的led晶圆及其制作方法、切割方法 |
-
2020
- 2020-07-16 CN CN202080102500.XA patent/CN115917767A/zh active Pending
- 2020-07-16 US US17/916,413 patent/US20230154902A1/en active Pending
- 2020-07-16 WO PCT/CN2020/102318 patent/WO2022011635A1/zh active Application Filing
-
2021
- 2021-07-09 TW TW110125227A patent/TWI811729B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| TWI811729B (zh) | 2023-08-11 |
| TW202220163A (zh) | 2022-05-16 |
| WO2022011635A1 (zh) | 2022-01-20 |
| US20230154902A1 (en) | 2023-05-18 |
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