JP2011009386A - Iii族窒化物半導体発光素子およびその製造方法 - Google Patents
Iii族窒化物半導体発光素子およびその製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 48
- 150000004767 nitrides Chemical class 0.000 title claims abstract description 45
- 238000004519 manufacturing process Methods 0.000 title claims description 24
- 238000005530 etching Methods 0.000 claims abstract description 21
- 239000011159 matrix material Substances 0.000 claims abstract description 8
- 239000000758 substrate Substances 0.000 claims description 36
- 238000000034 method Methods 0.000 claims description 22
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- 230000000149 penetrating effect Effects 0.000 claims description 4
- 238000005121 nitriding Methods 0.000 claims description 2
- 230000003287 optical effect Effects 0.000 abstract 2
- 229910052751 metal Inorganic materials 0.000 description 22
- 239000002184 metal Substances 0.000 description 22
- 238000000605 extraction Methods 0.000 description 18
- 229910052594 sapphire Inorganic materials 0.000 description 12
- 239000010980 sapphire Substances 0.000 description 12
- 229910004298 SiO 2 Inorganic materials 0.000 description 8
- 239000000463 material Substances 0.000 description 7
- 239000000126 substance Substances 0.000 description 7
- 230000008018 melting Effects 0.000 description 6
- 238000002844 melting Methods 0.000 description 6
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 6
- 239000000243 solution Substances 0.000 description 5
- 238000001039 wet etching Methods 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 239000007864 aqueous solution Substances 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 229910002704 AlGaN Inorganic materials 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910015365 Au—Si Inorganic materials 0.000 description 2
- 229910015363 Au—Sn Inorganic materials 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 229910020830 Sn-Bi Inorganic materials 0.000 description 2
- 229910020888 Sn-Cu Inorganic materials 0.000 description 2
- 229910018728 Sn—Bi Inorganic materials 0.000 description 2
- 229910019204 Sn—Cu Inorganic materials 0.000 description 2
- 230000002238 attenuated effect Effects 0.000 description 2
- 238000005253 cladding Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 230000005496 eutectics Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 229910052596 spinel Inorganic materials 0.000 description 2
- 239000011029 spinel Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- 229910001020 Au alloy Inorganic materials 0.000 description 1
- MHYQBXJRURFKIN-UHFFFAOYSA-N C1(C=CC=C1)[Mg] Chemical compound C1(C=CC=C1)[Mg] MHYQBXJRURFKIN-UHFFFAOYSA-N 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052795 boron group element Inorganic materials 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000001579 optical reflectometry Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910052696 pnictogen Inorganic materials 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- -1 tetramethyl hydroxide Chemical compound 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 1
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
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Abstract
【解決手段】発光素子100は、n型層106のn電極107側表面であって、n電極107が形成されていない領域に、ドット状の溝108が複数形成されている。この溝108は、n型層、活性層、p型層を貫通し、エッチングストッパ層109に達する深さである。溝108は、n電極107が形成されていない領域にマトリクス状に配置されている。溝108の側面に入射した光は、効率的に外部へ放射させることができるので、発光素子100の構成によれば光取り出し効率を向上させることができる。
【選択図】図1
Description
102:低融点金属層
103:p電極
104:p型層
105:活性層
106:n型層
107:n電極
108:溝
109:エッチングストッパ層
110:絶縁膜
111:配線状部
112:パッド部
113:微細な凹凸
114:サファイア基板
Claims (11)
- 導電性の支持体と、前記支持体上に位置するp電極と、前記p電極上に順に位置する、III 族窒化物半導体からなるp型層、活性層、n型層と、前記n型層上に位置するn電極と、を有するIII 族窒化物半導体発光素子において、
前記n型層の前記n電極形成側に、前記n型層の前記n電極形成側表面が一続きであるパターンに形成された溝と、
前記溝の側面および底面に形成された透光性の絶縁膜と、
を備え、
前記溝は、少なくとも前記p型層に達する深さであり、
前記n電極は配線状に形成されている、
ことを特徴とするIII 族窒化物半導体発光素子。 - 前記溝のパターンは、ドット状の溝が複数形成されたパターンである、ことを特徴とする請求項1に記載のIII 族窒化物半導体発光素子。
- 前記溝は、マトリクス状に配置されている、ことを特徴とする請求項2に記載のIII 族窒化物半導体発光素子。
- 前記溝は、前記p型層を貫通することを特徴とする請求項1ないし請求項3のいずれか1項に記載のIII 族窒化物半導体発光素子。
- 前記溝の底面に、エッチングストッパ層が形成されている、ことを特徴とする請求項4に記載のIII 族窒化物半導体発光素子。
- 成長基板上にIII 族窒化物半導体からなるn型層、活性層、p型層を順に積層し、前記p型層上にp電極を形成する第1工程と、
前記p電極上に、導電性の支持体を形成する第2工程と、
基板リフトオフにより前記成長基板を分離し除去する第3工程と、
前記成長基板の除去により露出した前記n型層表面に、前記n型層表面が一続きであるパターンの溝であって、少なくとも前記p型層に達する深さの溝を形成する第4工程と、
前記溝の側面に透光性の絶縁膜を形成し、前記n型層表面に配線状のn電極を形成する第5工程と、
を有することを特徴とするIII 族窒化物半導体発光素子の製造方法。 - 前記第4工程は、ドット状の溝を複数形成する工程である、ことを特徴とする請求項6に記載のIII 族窒化物半導体発光素子の製造方法。
- 前記第4工程は、複数のドット状の溝をマトリクス状に配置したパターンに形成する工程である、ことを特徴とする請求項7に記載のIII 族窒化物半導体発光素子の製造方法。
- 前記第4工程は、前記p型層を貫通する深さに前記溝を形成する工程である、ことを特徴とする請求項6ないし請求項8のいずれか1項に記載のIII 族窒化物半導体発光素子の製造方法。
- 前記第1工程は、p型層のp電極側表面であって、前記溝を形成する位置と対向する位置に、エッチングストッパ層を形成する工程を含む、ことを特徴とする請求項9に記載のIII 族窒化物半導体発光素子の製造方法。
- 前記第4工程は、前記溝の形成と同時に、素子間を分離させるメサ溝を形成する工程である、ことを特徴とする請求項6ないし請求項10のいずれか1項に記載のIII 族窒化物半導体発光素子の製造方法。
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US12/801,456 US8853720B2 (en) | 2009-06-24 | 2010-06-09 | Group III nitride semiconductor light-emitting device and method for producing the same |
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011192675A (ja) * | 2010-03-11 | 2011-09-29 | Toshiba Corp | 半導体発光素子及びその製造方法 |
JP2014086573A (ja) * | 2012-10-24 | 2014-05-12 | Nichia Chem Ind Ltd | 半導体発光素子 |
US9196807B2 (en) | 2012-10-24 | 2015-11-24 | Nichia Corporation | Light emitting element |
WO2016072050A1 (ja) * | 2014-11-07 | 2016-05-12 | 信越半導体株式会社 | 発光素子及び発光素子の製造方法 |
JP2018525821A (ja) * | 2015-08-27 | 2018-09-06 | エルジー イノテック カンパニー リミテッド | 発光素子及びこれを含む発光素子パッケージ |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI458122B (zh) * | 2011-11-23 | 2014-10-21 | Toshiba Kk | 半導體發光元件 |
JP6220614B2 (ja) * | 2013-09-20 | 2017-10-25 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法および半導体装置 |
KR102199995B1 (ko) * | 2014-06-02 | 2021-01-11 | 엘지이노텍 주식회사 | 발광소자 |
DE102014112551A1 (de) * | 2014-09-01 | 2016-03-03 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips |
JP6730082B2 (ja) * | 2016-05-02 | 2020-07-29 | 日機装株式会社 | 深紫外発光素子の製造方法 |
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US6730941B2 (en) * | 2002-01-30 | 2004-05-04 | Showa Denko Kabushiki Kaisha | Boron phosphide-based semiconductor light-emitting device, production method thereof, and light-emitting diode |
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JP2009032882A (ja) * | 2007-07-26 | 2009-02-12 | Sanken Electric Co Ltd | 半導体発光素子及び半導体発光素子製造方法 |
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Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2011192675A (ja) * | 2010-03-11 | 2011-09-29 | Toshiba Corp | 半導体発光素子及びその製造方法 |
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JP2014086573A (ja) * | 2012-10-24 | 2014-05-12 | Nichia Chem Ind Ltd | 半導体発光素子 |
US9196807B2 (en) | 2012-10-24 | 2015-11-24 | Nichia Corporation | Light emitting element |
US9570658B2 (en) | 2012-10-24 | 2017-02-14 | Nichia Corporation | Light emitting element |
WO2016072050A1 (ja) * | 2014-11-07 | 2016-05-12 | 信越半導体株式会社 | 発光素子及び発光素子の製造方法 |
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JP2018525821A (ja) * | 2015-08-27 | 2018-09-06 | エルジー イノテック カンパニー リミテッド | 発光素子及びこれを含む発光素子パッケージ |
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