JP2009182324A - 半導体発光素子 - Google Patents
半導体発光素子 Download PDFInfo
- Publication number
- JP2009182324A JP2009182324A JP2009001719A JP2009001719A JP2009182324A JP 2009182324 A JP2009182324 A JP 2009182324A JP 2009001719 A JP2009001719 A JP 2009001719A JP 2009001719 A JP2009001719 A JP 2009001719A JP 2009182324 A JP2009182324 A JP 2009182324A
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- Prior art keywords
- type semiconductor
- semiconductor layer
- layer
- light emitting
- electrode
- Prior art date
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- Granted
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 114
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 229910052751 metal Inorganic materials 0.000 claims abstract description 16
- 239000002184 metal Substances 0.000 claims abstract description 16
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 6
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 229910003437 indium oxide Inorganic materials 0.000 description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- AUSOIVYSFXBTNO-UHFFFAOYSA-N [O--].[O--].[Ag+].[In+3] Chemical compound [O--].[O--].[Ag+].[In+3] AUSOIVYSFXBTNO-UHFFFAOYSA-N 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910001195 gallium oxide Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/42—Transparent materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
【解決手段】本発明に係る半導体発光素子は、基板と、前記基板の上に形成され、且つ第一型半導体層、第二型半導体層、前記第一型半導体層と前記第二型半導体層との間に位置する活性層を備えた半導体発光構造と、前記第一型半導体層と電気接続し、且つ互いに離れている感応電極及び第一接触パッドを備えた第一電極と、前記第一電極と相反する極性を有し、前記第二型半導体層と電気接続し、且つ透光導電層及び前記透光導電層と電気接続するパターン化された金属導電層を備えた第二電極と、を備えている。
【選択図】図5
Description
11 基板
12、620、720 半導体発光構造
13 第一電極
14 第二電極
121、621、721 N型半導体層
122、622、722 活性層
123、623、723 P型半導体層
131 感応電極
132、1442 接触パッド
142 透光導電層
144 金属導電層
600、700 発光ダイオード
610、710 絶縁基板
630、730 N電極
640、740 P電極
750 酸化インジウムスズ層
1422 領域ユニット
1444 延長アーム
Claims (8)
- 基板と、
前記基板の上に形成され、且つ第一型半導体層、第二型半導体層、前記第一型半導体層と前記第二型半導体層との間に位置する活性層を備えた半導体発光構造と、
前記第一型半導体層と電気接続する第一電極と、
前記第一電極と相反する極性を有し、前記第二型半導体層と電気接続し、且つ透光導電層及び前記透光導電層と電気接続するパターン化された金属導電層を備えた第二電極と、
を備え、前記第一電極は、互いに離れている感応電極及び第一接触パッドを備えていることを特徴とする半導体発光素子。 - 前記基板は、絶縁基板であって、前記第一型半導体層は、前記基板の上に形成され、前記第二型半導体層及び前記活性層は、前記第一型半導体層の局部を覆い、前記第一型半導体層は、前記第二型半導体層及び前記活性層に覆われていない暴露部分を有し、前記第一電極は、前記暴露部分に位置し、且つ前記第一型半導体層とオーミック接触を形成し、前記第二電極の透光導電層は、前記第二型半導体層の上に形成され、前記金属導電層は、前記透光導電層における前記第二型半導体層と対向する面と反対面の上に形成されていることを特徴とする請求項1に記載の半導体発光素子。
- 前記感応電極の形状は、直線形、台形、円形、又は楕円形であることを特徴とする請求項1に記載の半導体発光素子。
- 前記感応電極の形状は、直線形であって、前記第一接触パッドは、前記感応電極の長手方向の延長線に位置していることを特徴とする請求項3に記載の半導体発光素子。
- 前記透光導電層は、前記第二型半導体層とオーミック接触を形成していることを特徴とする請求項1に記載の半導体発光素子。
- 前記金属導電層は、第二接触パッド及び前記第二接触パッドから延び出た延長アームを備えていることを特徴とする請求項5に記載の半導体発光素子。
- 前記金属導電層までの最も短い横方向の距離が300μmより小さいか等しい条件を満足する前記透光導電層のあらゆる領域ユニットの面積の合計が、前記透光導電層の総面積の80%以上であることを特徴とする請求項1に記載の半導体発光素子。
- 前記第一型半導体層は、N型半導体層であって、前記第二型半導体層は、P型半導体層であることを特徴とする請求項1記載の半導体発光素子。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2008103002624A CN101499510B (zh) | 2008-01-30 | 2008-01-30 | 半导体发光元件 |
CN200810300262.4 | 2008-01-30 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009182324A true JP2009182324A (ja) | 2009-08-13 |
JP5336202B2 JP5336202B2 (ja) | 2013-11-06 |
Family
ID=40577776
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009001719A Expired - Fee Related JP5336202B2 (ja) | 2008-01-30 | 2009-01-07 | 半導体発光素子 |
Country Status (4)
Country | Link |
---|---|
US (1) | US7994515B2 (ja) |
EP (1) | EP2086026A2 (ja) |
JP (1) | JP5336202B2 (ja) |
CN (1) | CN101499510B (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101071221B1 (ko) * | 2009-11-26 | 2011-10-10 | 주식회사 세미콘라이트 | 반도체 발광소자 |
CN106653988A (zh) * | 2015-11-04 | 2017-05-10 | 涂波 | 正装led芯片新式样焊垫 |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101055768B1 (ko) | 2009-12-14 | 2011-08-11 | 서울옵토디바이스주식회사 | 전극패드들을 갖는 발광 다이오드 |
TW201228035A (en) * | 2010-12-31 | 2012-07-01 | Genesis Photonics Inc | LED structure |
KR101786094B1 (ko) * | 2011-06-23 | 2017-10-16 | 엘지이노텍 주식회사 | 발광 소자, 발광 소자 패키지, 및 라이트 유닛 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11224960A (ja) * | 1997-11-19 | 1999-08-17 | Unisplay Sa | Ledランプ並びにledチップ |
JP2001345480A (ja) * | 2000-03-31 | 2001-12-14 | Toyoda Gosei Co Ltd | Iii族窒化物系化合物半導体素子 |
JP2005317931A (ja) * | 2004-03-29 | 2005-11-10 | Nichia Chem Ind Ltd | 半導体発光素子 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4024994B2 (ja) * | 2000-06-30 | 2007-12-19 | 株式会社東芝 | 半導体発光素子 |
CN1156030C (zh) * | 2001-02-27 | 2004-06-30 | 连威磊晶科技股份有限公司 | 具有高透光率的发光二极管元件 |
US7288797B2 (en) * | 2004-01-20 | 2007-10-30 | Nichia Corporation | Semiconductor light emitting element |
CN101320771A (zh) * | 2007-06-04 | 2008-12-10 | 富士迈半导体精密工业(上海)有限公司 | 半导体发光元件 |
-
2008
- 2008-01-30 CN CN2008103002624A patent/CN101499510B/zh not_active Expired - Fee Related
- 2008-12-29 US US12/344,647 patent/US7994515B2/en not_active Expired - Fee Related
-
2009
- 2009-01-07 JP JP2009001719A patent/JP5336202B2/ja not_active Expired - Fee Related
- 2009-01-22 EP EP09250163A patent/EP2086026A2/en not_active Withdrawn
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11224960A (ja) * | 1997-11-19 | 1999-08-17 | Unisplay Sa | Ledランプ並びにledチップ |
JP2001345480A (ja) * | 2000-03-31 | 2001-12-14 | Toyoda Gosei Co Ltd | Iii族窒化物系化合物半導体素子 |
JP2005317931A (ja) * | 2004-03-29 | 2005-11-10 | Nichia Chem Ind Ltd | 半導体発光素子 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101071221B1 (ko) * | 2009-11-26 | 2011-10-10 | 주식회사 세미콘라이트 | 반도체 발광소자 |
CN106653988A (zh) * | 2015-11-04 | 2017-05-10 | 涂波 | 正装led芯片新式样焊垫 |
Also Published As
Publication number | Publication date |
---|---|
US20090189167A1 (en) | 2009-07-30 |
CN101499510B (zh) | 2011-06-22 |
JP5336202B2 (ja) | 2013-11-06 |
CN101499510A (zh) | 2009-08-05 |
US7994515B2 (en) | 2011-08-09 |
EP2086026A2 (en) | 2009-08-05 |
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