JP4762849B2 - 窒化物系半導体発光素子 - Google Patents
窒化物系半導体発光素子 Download PDFInfo
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- JP4762849B2 JP4762849B2 JP2006278607A JP2006278607A JP4762849B2 JP 4762849 B2 JP4762849 B2 JP 4762849B2 JP 2006278607 A JP2006278607 A JP 2006278607A JP 2006278607 A JP2006278607 A JP 2006278607A JP 4762849 B2 JP4762849 B2 JP 4762849B2
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- 239000004065 semiconductor Substances 0.000 title claims description 83
- 150000004767 nitrides Chemical class 0.000 title claims description 79
- 239000000758 substrate Substances 0.000 claims description 18
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 7
- 238000009792 diffusion process Methods 0.000 description 7
- 229910002601 GaN Inorganic materials 0.000 description 6
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 229910052594 sapphire Inorganic materials 0.000 description 4
- 239000010980 sapphire Substances 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 229910002704 AlGaN Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0555—Shape
- H01L2224/05552—Shape in top view
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Description
に形成されており、第1領域及び前記第1領域と互いに噛み合っているフィンガー構造の
第2領域に区分された上面を有するn型窒化物半導体層と、前記n型窒化物半導体層の第
2領域上に形成されている活性層と、前記活性層上に形成されているp型窒化物半導体層
と、前記p型窒化物半導体層上に形成されている反射電極と、前記反射電極上に形成され
ているp型電極と、前記n型窒化物半導体層の第1領域上に形成されているn型電極と、
前記n型電極上に形成され、前記n型電極の複数の外縁にそれぞれ隣接するように配置さ
れた複数のn型電極パッドと、を備え、前記n型電極は、前記n型窒化物半導体層の最外
辺に沿って、前記第1領域上に形成された第1のn型枝電極と、前記第1領域上の、前記
第1のn型枝電極の内側に位置しフィンガー構造を有する部分に形成された第2のn型枝
電極と、を備え、n型電極パッドの一部分およびその他の部分はn型窒化物半導体層の一対の外縁に別々に隣接するように配置され、n型窒化物半導体層の前記一対の外縁は水平方向において互いに平行であり、n型電極パッドの一部分およびその他の部分は水平方向において互いに異なる位置に配置されている。
まず、図2及び図3を参照し、本発明の第1の実施の形態に係る水平構造を有する大面積の窒化物系半導体発光素子の構造について詳細に説明する。
図4及び図5を参照し、本発明の第2の実施の形態に係る水平構造を有する大面積の窒化物系半導体発光素子の構造について説明する。但し、第2の実施の形態の構成のうち、第1の実施の形態と同じ部分についての説明は省略し、第2の実施の形態で変わる構成についてのみ詳述する。
110 バッファ層
120 n型窒化物半導体層
130 活性層
140 p型窒化物半導体層
150 n型電極
150´,150´´ 枝電極
155 n型電極パッド
160 p型電極
165 p型電極パッド
170 反射電極
Claims (7)
- 基板と、
前記基板上に形成されており、第1領域及び前記第1領域と互いに噛み合っているフィンガー構造の第2領域に区分された上面を有するn型窒化物半導体層と、
前記n型窒化物半導体層の第2領域上に形成されている活性層と、
前記活性層上に形成されているp型窒化物半導体層と、
前記p型窒化物半導体層上に形成されている反射電極と、
前記反射電極上に形成されているp型電極と、
前記n型窒化物半導体層の第1領域上に形成されているn型電極と、
前記n型電極上に形成され、前記n型電極の複数の外縁にそれぞれ隣接するように配置された複数のn型電極パッドと、
を備え、
前記n型電極は、
前記n型窒化物半導体層の最外辺に沿って、前記第1領域上に形成された第1のn型枝電極と、
前記第1領域上の、前記第1のn型枝電極の内側に位置しフィンガー構造を有する部分に形成された第2のn型枝電極と、
を備え、
n型電極パッドの一部分およびその他の部分はn型窒化物半導体層の一対の外縁に別々に隣接するように配置され、n型窒化物半導体層の前記一対の外縁は水平方向において互いに平行であり、
n型電極パッドの一部分およびその他の部分は水平方向において互いに異なる位置に配置されている、窒化物系半導体発光素子。 - 前記第2領域は、前記基板の中央を基準として対称な形状を有することを特徴とする請求項1に記載の窒化物系半導体発光素子。
- 前記n型電極パッドは、少なくとも3つ形成されたことを特徴とする請求項1または2に記載の窒化物系半導体発光素子。
- 前記n型電極パッドは、500μm以下の幅を有することを特徴とする請求項1〜3のいずれか一項に記載の窒化物系半導体発光素子。
- 前記第1のn型枝電極は、前記第2のn型枝電極の幅より25%以上大きい幅を有することを特徴とする請求項1〜4のいずれか一項に記載の窒化物系半導体発光素子。
- 前記複数のn型電極パッドは、前記n型電極の第1のn型電極枝を介して全て電気的に接続していることを特徴とする請求項1〜5のいずれか一項に記載の窒化物系半導体発光素子。
- 前記第2領域の面積は、前記第1領域の面積より大きいことを特徴とする請求項1〜6のいずれか一項に記載の窒化物系半導体発光素子。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020050097604A KR100706944B1 (ko) | 2005-10-17 | 2005-10-17 | 질화물계 반도체 발광소자 |
KR10-2005-0097604 | 2005-10-17 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007116153A JP2007116153A (ja) | 2007-05-10 |
JP4762849B2 true JP4762849B2 (ja) | 2011-08-31 |
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JP2006278607A Active JP4762849B2 (ja) | 2005-10-17 | 2006-10-12 | 窒化物系半導体発光素子 |
Country Status (4)
Country | Link |
---|---|
US (1) | US8168995B2 (ja) |
JP (1) | JP4762849B2 (ja) |
KR (1) | KR100706944B1 (ja) |
CN (1) | CN100495749C (ja) |
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KR100576853B1 (ko) * | 2003-12-18 | 2006-05-10 | 삼성전기주식회사 | 질화물 반도체 발광소자 |
JP2005276900A (ja) | 2004-03-23 | 2005-10-06 | Shin Etsu Handotai Co Ltd | 発光素子 |
DE102004019588A1 (de) * | 2004-04-22 | 2005-11-17 | Osram Opto Semiconductors Gmbh | Verfahren zur Strukturierung von zumindest einer Schicht sowie elektrisches Bauelement mit Strukturen aus der Schicht |
US20060001035A1 (en) * | 2004-06-22 | 2006-01-05 | Toyoda Gosei Co., Ltd. | Light emitting element and method of making same |
KR100501109B1 (ko) | 2004-12-14 | 2005-07-18 | (주)옵토웨이 | 무반사면을 가지는 대면적 발광 다이오드 |
KR100631969B1 (ko) * | 2005-02-28 | 2006-10-11 | 삼성전기주식회사 | 질화물 반도체 발광소자 |
KR100706944B1 (ko) * | 2005-10-17 | 2007-04-12 | 삼성전기주식회사 | 질화물계 반도체 발광소자 |
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2005
- 2005-10-17 KR KR1020050097604A patent/KR100706944B1/ko active IP Right Grant
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2006
- 2006-10-05 US US11/543,231 patent/US8168995B2/en not_active Expired - Fee Related
- 2006-10-12 JP JP2006278607A patent/JP4762849B2/ja active Active
- 2006-10-16 CN CN200610150534.8A patent/CN100495749C/zh active Active
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KR100706944B1 (ko) | 2007-04-12 |
CN1953224A (zh) | 2007-04-25 |
US8168995B2 (en) | 2012-05-01 |
CN100495749C (zh) | 2009-06-03 |
US20070085095A1 (en) | 2007-04-19 |
JP2007116153A (ja) | 2007-05-10 |
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